TWI368319B - Solid-state image pickup device and a method of manufacturing the same, and image pickup apparatus - Google Patents
Solid-state image pickup device and a method of manufacturing the same, and image pickup apparatusInfo
- Publication number
- TWI368319B TWI368319B TW097114690A TW97114690A TWI368319B TW I368319 B TWI368319 B TW I368319B TW 097114690 A TW097114690 A TW 097114690A TW 97114690 A TW97114690 A TW 97114690A TW I368319 B TWI368319 B TW I368319B
- Authority
- TW
- Taiwan
- Prior art keywords
- image pickup
- solid
- manufacturing
- same
- pickup device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007128992A JP2008288243A (ja) | 2007-05-15 | 2007-05-15 | 固体撮像装置とその製造方法および撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200849572A TW200849572A (en) | 2008-12-16 |
| TWI368319B true TWI368319B (en) | 2012-07-11 |
Family
ID=40026551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097114690A TWI368319B (en) | 2007-05-15 | 2008-04-22 | Solid-state image pickup device and a method of manufacturing the same, and image pickup apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20080283728A1 (zh) |
| JP (1) | JP2008288243A (zh) |
| KR (1) | KR20080101699A (zh) |
| CN (1) | CN101308860A (zh) |
| TW (1) | TWI368319B (zh) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7973271B2 (en) * | 2006-12-08 | 2011-07-05 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
| US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
| US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
| US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
| US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
| US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
| US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
| US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
| US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
| US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
| US8229255B2 (en) * | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
| US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
| US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
| US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
| US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
| US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
| US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
| US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
| US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
| US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
| US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
| KR20100079058A (ko) * | 2008-12-30 | 2010-07-08 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
| TWI416716B (zh) * | 2009-01-21 | 2013-11-21 | Sony Corp | 固態影像裝置,其製造方法,及攝像設備 |
| JP5347999B2 (ja) * | 2009-03-12 | 2013-11-20 | ソニー株式会社 | 固体撮像素子及びその製造方法、撮像装置 |
| JP2010283145A (ja) * | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
| JP5150566B2 (ja) * | 2009-06-22 | 2013-02-20 | 株式会社東芝 | 半導体装置およびカメラモジュール |
| KR20110003696A (ko) * | 2009-07-06 | 2011-01-13 | 삼성전자주식회사 | 단일 칩 입체 영상 센서용 광학 필터 배열 및 그 필터 제조 방법 |
| KR20110007408A (ko) * | 2009-07-16 | 2011-01-24 | 삼성전자주식회사 | 3차원 컬러 입체 영상 센서용 광학 필터를 갖는 반도체 소자 및 제조 방법 |
| JP5471117B2 (ja) * | 2009-07-24 | 2014-04-16 | ソニー株式会社 | 固体撮像装置とその製造方法並びにカメラ |
| KR101648353B1 (ko) | 2009-09-25 | 2016-08-17 | 삼성전자 주식회사 | 거리 센서를 포함하는 이미지 센서 |
| KR101608903B1 (ko) | 2009-11-16 | 2016-04-20 | 삼성전자주식회사 | 적외선 이미지 센서 |
| US20110175981A1 (en) * | 2010-01-19 | 2011-07-21 | Chun-Hung Lai | 3d color image sensor |
| KR101692953B1 (ko) | 2010-07-09 | 2017-01-05 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| KR101801259B1 (ko) * | 2010-07-21 | 2017-11-27 | 삼성전자주식회사 | 광 유도 구조물, 상기 광 유도 구조물을 포함하는 이미지 센서, 및 상기 이미지 센서를 포함하는 프로세서 베이스드 시스템 |
| EP2487717B1 (en) * | 2011-02-09 | 2014-09-17 | Canon Kabushiki Kaisha | Photoelectric conversion element, photoelectric conversion apparatus and image sensing system |
| JP5810551B2 (ja) * | 2011-02-25 | 2015-11-11 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| CN102740003A (zh) * | 2011-04-01 | 2012-10-17 | 原相科技股份有限公司 | 可同时侦测红外线和可见光的光学感测装置 |
| US20120267741A1 (en) * | 2011-04-21 | 2012-10-25 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
| JP6080343B2 (ja) * | 2011-07-29 | 2017-02-15 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子およびその製造方法 |
| KR101695252B1 (ko) | 2012-06-07 | 2017-01-13 | 한화테크윈 주식회사 | 멀티 대역 필터 어레이 기반 카메라 시스템 및 그의 영상 처리 방법 |
| JP2014183064A (ja) * | 2013-03-18 | 2014-09-29 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
| JP6138018B2 (ja) * | 2013-10-03 | 2017-05-31 | 三菱電機株式会社 | 赤外線固体撮像素子 |
| JP2015088691A (ja) * | 2013-11-01 | 2015-05-07 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| WO2016103430A1 (ja) | 2014-12-25 | 2016-06-30 | キヤノン株式会社 | ラインセンサ、画像読取装置、画像形成装置 |
| KR102410028B1 (ko) | 2015-06-24 | 2022-06-15 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
| KR102409389B1 (ko) * | 2015-10-06 | 2022-06-15 | 삼성전자주식회사 | 색분리 소자를 포함하는 이미지 센서 |
| TW201724483A (zh) * | 2015-12-22 | 2017-07-01 | 力晶科技股份有限公司 30078 新竹科學工業園區力行一路12號 | 影像感測元件的光管結構及其製造方法 |
| CN113727000A (zh) * | 2016-05-27 | 2021-11-30 | 松下知识产权经营株式会社 | 摄像系统 |
| WO2017212509A1 (ja) * | 2016-06-08 | 2017-12-14 | パナソニックIpマネジメント株式会社 | 投影システム |
| KR20180071802A (ko) | 2016-12-20 | 2018-06-28 | 삼성전자주식회사 | 이미지 센서 |
| TWI662319B (zh) * | 2017-09-27 | 2019-06-11 | Powerchip Technology Corporation | 光管結構、其製造方法及影像感測元件 |
| JP2019180048A (ja) * | 2018-03-30 | 2019-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| CN109031762A (zh) * | 2018-08-23 | 2018-12-18 | 合肥京东方光电科技有限公司 | 显示面板及其驱动方法、显示装置 |
| KR20210121852A (ko) * | 2020-03-31 | 2021-10-08 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| CN114447006A (zh) | 2020-10-30 | 2022-05-06 | 三星电子株式会社 | 包括分色透镜阵列的图像传感器和包括图像传感器的电子设备 |
| JP7574860B2 (ja) * | 2020-11-30 | 2024-10-29 | 日本電信電話株式会社 | 撮像素子及び撮像装置 |
| US12382740B2 (en) | 2021-12-30 | 2025-08-05 | Omnivision Technologies, Inc. | Image sensor for infrared sensing and fabrication thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3083013B2 (ja) * | 1993-01-19 | 2000-09-04 | キヤノン株式会社 | イメージセンサ及び画像情報処理装置 |
| JPH1065135A (ja) * | 1996-05-30 | 1998-03-06 | Toshiba Corp | 固体撮像装置およびこれを用いた画像読取装置 |
| JP4253943B2 (ja) * | 1999-08-30 | 2009-04-15 | ソニー株式会社 | 固体撮像装置 |
| JP2001274528A (ja) * | 2000-01-21 | 2001-10-05 | Fujitsu Ltd | 薄膜デバイスの基板間転写方法 |
| JP4123415B2 (ja) * | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
| JP4123060B2 (ja) * | 2003-06-11 | 2008-07-23 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| US7250591B2 (en) * | 2004-06-01 | 2007-07-31 | Micron Technology, Inc. | Photonic crystal-based filter for use in an image sensor |
| JP2006128383A (ja) * | 2004-10-28 | 2006-05-18 | Canon Inc | 固体撮像素子及びその製造方法 |
| US7193289B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Damascene copper wiring image sensor |
| JP4882297B2 (ja) * | 2004-12-10 | 2012-02-22 | ソニー株式会社 | 物理情報取得装置、半導体装置の製造方法 |
| US7456384B2 (en) * | 2004-12-10 | 2008-11-25 | Sony Corporation | Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor |
| US7755122B2 (en) * | 2005-08-29 | 2010-07-13 | United Microelectronics Corp. | Complementary metal oxide semiconductor image sensor |
-
2007
- 2007-05-15 JP JP2007128992A patent/JP2008288243A/ja active Pending
-
2008
- 2008-04-17 US US12/081,531 patent/US20080283728A1/en not_active Abandoned
- 2008-04-22 TW TW097114690A patent/TWI368319B/zh not_active IP Right Cessation
- 2008-05-14 KR KR1020080044373A patent/KR20080101699A/ko not_active Ceased
- 2008-05-15 CN CNA2008100992656A patent/CN101308860A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN101308860A (zh) | 2008-11-19 |
| KR20080101699A (ko) | 2008-11-21 |
| US20080283728A1 (en) | 2008-11-20 |
| JP2008288243A (ja) | 2008-11-27 |
| TW200849572A (en) | 2008-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |