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TWI366861B - - Google Patents

Info

Publication number
TWI366861B
TWI366861B TW097104310A TW97104310A TWI366861B TW I366861 B TWI366861 B TW I366861B TW 097104310 A TW097104310 A TW 097104310A TW 97104310 A TW97104310 A TW 97104310A TW I366861 B TWI366861 B TW I366861B
Authority
TW
Taiwan
Application number
TW097104310A
Other versions
TW200849325A (en
Inventor
Masahito Mori
Naoyuki Kofuji
Naoshi Itabashi
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008002709A external-priority patent/JP5014166B2/ja
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Priority to TW97104310A priority Critical patent/TW200849325A/zh
Publication of TW200849325A publication Critical patent/TW200849325A/zh
Application granted granted Critical
Publication of TWI366861B publication Critical patent/TWI366861B/zh

Links

TW97104310A 2007-02-13 2008-02-04 Plasma processing method and plasma processing apparatus TW200849325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW97104310A TW200849325A (en) 2007-02-13 2008-02-04 Plasma processing method and plasma processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW96105248 2007-02-13
JP2008002709A JP5014166B2 (ja) 2007-02-13 2008-01-10 プラズマ処理方法およびプラズマ処理装置
TW97104310A TW200849325A (en) 2007-02-13 2008-02-04 Plasma processing method and plasma processing apparatus

Publications (2)

Publication Number Publication Date
TW200849325A TW200849325A (en) 2008-12-16
TWI366861B true TWI366861B (zh) 2012-06-21

Family

ID=44824140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97104310A TW200849325A (en) 2007-02-13 2008-02-04 Plasma processing method and plasma processing apparatus

Country Status (1)

Country Link
TW (1) TW200849325A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI608515B (zh) * 2012-09-21 2017-12-11 東京威力科創股份有限公司 Gas supply method and plasma processing apparatus
TWI893072B (zh) * 2020-03-17 2025-08-11 日商東京威力科創股份有限公司 偵測方法及電漿處理裝置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5334787B2 (ja) 2009-10-09 2013-11-06 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9799491B2 (en) * 2015-10-29 2017-10-24 Applied Materials, Inc. Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching
TWI763223B (zh) * 2020-12-31 2022-05-01 華邦電子股份有限公司 蝕刻系統及其蝕刻方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI608515B (zh) * 2012-09-21 2017-12-11 東京威力科創股份有限公司 Gas supply method and plasma processing apparatus
TWI893072B (zh) * 2020-03-17 2025-08-11 日商東京威力科創股份有限公司 偵測方法及電漿處理裝置

Also Published As

Publication number Publication date
TW200849325A (en) 2008-12-16

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