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TWI366291B - Semiconductor light-emitting device having stacked transparent electrodes - Google Patents

Semiconductor light-emitting device having stacked transparent electrodes

Info

Publication number
TWI366291B
TWI366291B TW096111705A TW96111705A TWI366291B TW I366291 B TWI366291 B TW I366291B TW 096111705 A TW096111705 A TW 096111705A TW 96111705 A TW96111705 A TW 96111705A TW I366291 B TWI366291 B TW I366291B
Authority
TW
Taiwan
Prior art keywords
emitting device
semiconductor light
transparent electrodes
stacked transparent
stacked
Prior art date
Application number
TW096111705A
Other languages
English (en)
Other versions
TW200840089A (en
Inventor
Chen Ou
Chen Ke Hsu
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW096111705A priority Critical patent/TWI366291B/zh
Priority to KR1020080028735A priority patent/KR101013506B1/ko
Priority to JP2008085554A priority patent/JP2008258615A/ja
Priority to DE102008016074.1A priority patent/DE102008016074B4/de
Priority to US12/078,375 priority patent/US8293382B2/en
Publication of TW200840089A publication Critical patent/TW200840089A/zh
Application granted granted Critical
Publication of TWI366291B publication Critical patent/TWI366291B/zh
Priority to US13/623,315 priority patent/US20130020609A1/en
Priority to JP2014081406A priority patent/JP5815788B2/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
TW096111705A 2007-03-30 2007-03-30 Semiconductor light-emitting device having stacked transparent electrodes TWI366291B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
TW096111705A TWI366291B (en) 2007-03-30 2007-03-30 Semiconductor light-emitting device having stacked transparent electrodes
KR1020080028735A KR101013506B1 (ko) 2007-03-30 2008-03-28 적층 구조의 투명 전극을 갖는 반도체 발광 장치
JP2008085554A JP2008258615A (ja) 2007-03-30 2008-03-28 スタック型透明電極を有する半導体発光装置
DE102008016074.1A DE102008016074B4 (de) 2007-03-30 2008-03-28 Licht emittierendes Halbleiterbauteil mit transparenten Mehrschichtelektroden
US12/078,375 US8293382B2 (en) 2007-03-30 2008-03-31 Semiconductor light-emitting device having stacked transparent electrodes
US13/623,315 US20130020609A1 (en) 2007-03-30 2012-09-20 Semiconductor light-emitting device having stacked transparent electrodes
JP2014081406A JP5815788B2 (ja) 2007-03-30 2014-04-10 スタック型透明電極を有する半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096111705A TWI366291B (en) 2007-03-30 2007-03-30 Semiconductor light-emitting device having stacked transparent electrodes

Publications (2)

Publication Number Publication Date
TW200840089A TW200840089A (en) 2008-10-01
TWI366291B true TWI366291B (en) 2012-06-11

Family

ID=39744428

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111705A TWI366291B (en) 2007-03-30 2007-03-30 Semiconductor light-emitting device having stacked transparent electrodes

Country Status (5)

Country Link
US (2) US8293382B2 (zh)
JP (2) JP2008258615A (zh)
KR (1) KR101013506B1 (zh)
DE (1) DE102008016074B4 (zh)
TW (1) TWI366291B (zh)

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JP2016518703A (ja) * 2013-03-15 2016-06-23 グロ アーベーＧｌｏ Ａｂ ２ステップの透明導電膜の堆積方法、及び、ＧａＮナノワイヤデバイスの製造方法
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JP6617401B2 (ja) * 2014-09-30 2019-12-11 日亜化学工業株式会社 半導体発光素子
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JP6848485B2 (ja) * 2017-01-31 2021-03-24 日亜化学工業株式会社 発光素子の製造方法
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TWI662717B (zh) * 2017-07-31 2019-06-11 晶元光電股份有限公司 發光元件
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CN114914342B (zh) * 2021-02-09 2025-07-25 隆达电子股份有限公司 发光二极管结构
CN113809213B (zh) * 2021-07-28 2025-03-28 京东方华灿光电(苏州)有限公司 降低电压的发光二极管芯片及其制备方法
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Also Published As

Publication number Publication date
DE102008016074A1 (de) 2008-10-16
US20130020609A1 (en) 2013-01-24
KR20080089234A (ko) 2008-10-06
KR101013506B1 (ko) 2011-02-10
JP2014131087A (ja) 2014-07-10
JP2008258615A (ja) 2008-10-23
DE102008016074B4 (de) 2023-03-30
US20080241526A1 (en) 2008-10-02
JP5815788B2 (ja) 2015-11-17
TW200840089A (en) 2008-10-01
US8293382B2 (en) 2012-10-23

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