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TWI366265B - Solid-state image capturing apparatus and electronic information device - Google Patents

Solid-state image capturing apparatus and electronic information device

Info

Publication number
TWI366265B
TWI366265B TW096132638A TW96132638A TWI366265B TW I366265 B TWI366265 B TW I366265B TW 096132638 A TW096132638 A TW 096132638A TW 96132638 A TW96132638 A TW 96132638A TW I366265 B TWI366265 B TW I366265B
Authority
TW
Taiwan
Prior art keywords
solid
image capturing
state image
electronic information
information device
Prior art date
Application number
TW096132638A
Other languages
English (en)
Other versions
TW200832688A (en
Inventor
Noboru Takeuchi
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200832688A publication Critical patent/TW200832688A/zh
Application granted granted Critical
Publication of TWI366265B publication Critical patent/TWI366265B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
TW096132638A 2006-09-01 2007-08-31 Solid-state image capturing apparatus and electronic information device TWI366265B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006238051A JP2008060476A (ja) 2006-09-01 2006-09-01 固体撮像装置および電子情報機器

Publications (2)

Publication Number Publication Date
TW200832688A TW200832688A (en) 2008-08-01
TWI366265B true TWI366265B (en) 2012-06-11

Family

ID=39135942

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096132638A TWI366265B (en) 2006-09-01 2007-08-31 Solid-state image capturing apparatus and electronic information device

Country Status (3)

Country Link
JP (1) JP2008060476A (zh)
TW (1) TWI366265B (zh)
WO (1) WO2008026660A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5564847B2 (ja) * 2009-07-23 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US9123653B2 (en) 2009-07-23 2015-09-01 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic apparatus
JP5566093B2 (ja) * 2009-12-18 2014-08-06 キヤノン株式会社 固体撮像装置
TWI482488B (zh) * 2010-04-12 2015-04-21 Univ Nat Cheng Kung 分散式濾波感測結構及光學裝置
RU2525654C1 (ru) * 2010-06-01 2014-08-20 Боли Медиа Коммуникейшнз (Шэньчжэнь) Ко., Лтд Мультиспектральное фоточувствительное устройство
JP2013084785A (ja) 2011-10-11 2013-05-09 Sony Corp 固体撮像装置、撮像装置
JP5456084B2 (ja) 2012-02-07 2014-03-26 株式会社東芝 固体撮像素子
WO2013133143A1 (en) * 2012-03-09 2013-09-12 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
KR102109221B1 (ko) * 2012-05-16 2020-05-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치 및 전자 기기
EP2940504B1 (en) 2014-04-25 2023-06-07 Personal Genomics, Inc. Optical sensor
JP5885779B2 (ja) * 2014-06-17 2016-03-15 キヤノン株式会社 固体撮像装置
JP6230637B2 (ja) * 2016-02-10 2017-11-15 キヤノン株式会社 固体撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02184072A (ja) * 1989-01-11 1990-07-18 Victor Co Of Japan Ltd 固体撮像装置
JPH0983010A (ja) * 1995-09-12 1997-03-28 Nippon Telegr & Teleph Corp <Ntt> 赤外線受光装置およびその製造方法
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
JP3425395B2 (ja) * 1998-09-01 2003-07-14 株式会社東芝 半導体多波長撮像素子
JP2003303949A (ja) * 2002-04-11 2003-10-24 Canon Inc 撮像装置
JP2004022565A (ja) * 2002-06-12 2004-01-22 Nippon Telegr & Teleph Corp <Ntt> 受光素子及びそれを用いたカラーセンサ装置
JP2005150521A (ja) * 2003-11-18 2005-06-09 Canon Inc 撮像装置およびその製造方法
JP4483442B2 (ja) * 2004-07-13 2010-06-16 ソニー株式会社 固体撮像素子と固体撮像装置、固体撮像素子の製造方法
JP2006054262A (ja) * 2004-08-10 2006-02-23 Sony Corp 固体撮像装置
JP2006054246A (ja) * 2004-08-10 2006-02-23 Disco Abrasive Syst Ltd ウエーハの分離方法
JP4507769B2 (ja) * 2004-08-31 2010-07-21 ソニー株式会社 固体撮像素子、カメラモジュール及び電子機器モジュール

Also Published As

Publication number Publication date
TW200832688A (en) 2008-08-01
JP2008060476A (ja) 2008-03-13
WO2008026660A1 (en) 2008-03-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees