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TWI366265B - Solid-state image capturing apparatus and electronic information device - Google Patents

Solid-state image capturing apparatus and electronic information device

Info

Publication number
TWI366265B
TWI366265B TW096132638A TW96132638A TWI366265B TW I366265 B TWI366265 B TW I366265B TW 096132638 A TW096132638 A TW 096132638A TW 96132638 A TW96132638 A TW 96132638A TW I366265 B TWI366265 B TW I366265B
Authority
TW
Taiwan
Prior art keywords
solid
image capturing
state image
electronic information
information device
Prior art date
Application number
TW096132638A
Other languages
Chinese (zh)
Other versions
TW200832688A (en
Inventor
Noboru Takeuchi
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200832688A publication Critical patent/TW200832688A/en
Application granted granted Critical
Publication of TWI366265B publication Critical patent/TWI366265B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
TW096132638A 2006-09-01 2007-08-31 Solid-state image capturing apparatus and electronic information device TWI366265B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006238051A JP2008060476A (en) 2006-09-01 2006-09-01 Solid-state imaging device and electronic information device

Publications (2)

Publication Number Publication Date
TW200832688A TW200832688A (en) 2008-08-01
TWI366265B true TWI366265B (en) 2012-06-11

Family

ID=39135942

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096132638A TWI366265B (en) 2006-09-01 2007-08-31 Solid-state image capturing apparatus and electronic information device

Country Status (3)

Country Link
JP (1) JP2008060476A (en)
TW (1) TWI366265B (en)
WO (1) WO2008026660A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5564847B2 (en) * 2009-07-23 2014-08-06 ソニー株式会社 SOLID-STATE IMAGING DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
US9123653B2 (en) 2009-07-23 2015-09-01 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic apparatus
JP5566093B2 (en) * 2009-12-18 2014-08-06 キヤノン株式会社 Solid-state imaging device
TWI482488B (en) * 2010-04-12 2015-04-21 Univ Nat Cheng Kung Decentralized filter sensing structure and optical device
RU2525654C1 (en) * 2010-06-01 2014-08-20 Боли Медиа Коммуникейшнз (Шэньчжэнь) Ко., Лтд Multispectral photosensitive device
JP2013084785A (en) 2011-10-11 2013-05-09 Sony Corp Solid-state imaging device, and imaging device
JP5456084B2 (en) 2012-02-07 2014-03-26 株式会社東芝 Solid-state image sensor
WO2013133143A1 (en) * 2012-03-09 2013-09-12 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
KR102109221B1 (en) * 2012-05-16 2020-05-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 Solid-state image pickup apparatus and electronic apparatus
EP2940504B1 (en) 2014-04-25 2023-06-07 Personal Genomics, Inc. Optical sensor
JP5885779B2 (en) * 2014-06-17 2016-03-15 キヤノン株式会社 Solid-state imaging device
JP6230637B2 (en) * 2016-02-10 2017-11-15 キヤノン株式会社 Solid-state imaging device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02184072A (en) * 1989-01-11 1990-07-18 Victor Co Of Japan Ltd solid state imaging device
JPH0983010A (en) * 1995-09-12 1997-03-28 Nippon Telegr & Teleph Corp <Ntt> Infrared receiver and manufacturing method thereof
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
JP3425395B2 (en) * 1998-09-01 2003-07-14 株式会社東芝 Semiconductor multi-wavelength imaging device
JP2003303949A (en) * 2002-04-11 2003-10-24 Canon Inc Imaging device
JP2004022565A (en) * 2002-06-12 2004-01-22 Nippon Telegr & Teleph Corp <Ntt> Light receiving element and color sensor device using the same
JP2005150521A (en) * 2003-11-18 2005-06-09 Canon Inc Imaging device and manufacturing method thereof
JP4483442B2 (en) * 2004-07-13 2010-06-16 ソニー株式会社 Solid-state imaging device, solid-state imaging device, and method for manufacturing solid-state imaging device
JP2006054262A (en) * 2004-08-10 2006-02-23 Sony Corp Solid-state imaging device
JP2006054246A (en) * 2004-08-10 2006-02-23 Disco Abrasive Syst Ltd Wafer separation method
JP4507769B2 (en) * 2004-08-31 2010-07-21 ソニー株式会社 Solid-state image sensor, camera module, and electronic device module

Also Published As

Publication number Publication date
TW200832688A (en) 2008-08-01
JP2008060476A (en) 2008-03-13
WO2008026660A1 (en) 2008-03-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees