TWI364053B - - Google Patents

Description

1364053 IX. The present invention relates to a plasma processing apparatus for processing a semiconductor wafer 212 using plasma to form a wiring structure of a semiconductor device, or a plasma processing unit; Regarding the surface of the semiconductor wafer 212 placed on the sample stage in the vacuum vessel as a low pressure, the film for forming a plurality of layers of the wiring structure is etched to form a film structure having a film for insulating the upper and lower layers. Electric φ slurry processing device or processing method. • [Prior Art] _ In recent years, the semiconductor integrated circuit device has been highly developed. > MOS (Metal Oxide Semiconductor) type semiconductor devices are more demanding for the miniaturization and high performance of components such as transistors. In particular, the gate insulating film, which is one element of the MOS structure, is rapidly progressing in accordance with the miniaturization, high-speed operation, and low-voltage thinning of the above-mentioned transistor. As a material constituting the gate insulating film, a tantalum oxide film (SiO 2 film) has been conventionally used. On the other hand, as the gate electrode is thinned by the miniaturization of the gate electrode, the tunneling current generated by the carrier (electrons and holes) directly passing through the gate insulating film, that is, the gate leakage The current will increase. For example, the thickness of the gate insulating film required for a device of 1 3 Onm pitch is about 2 nm for the Si 〇 2 film, but this range is the range in which the tunneling current starts to flow. Therefore, when the SiO 2 film is used as the gate insulating film, the gate leakage current cannot be suppressed and the power consumption is increased. -5- 1364053 Therefore, a substituted 5丨02 film was used, and a dielectric constant was used as a gate insulating film. As a high dielectric constant, it is called High-k film or Hi-k film. Previously, there were TiO film and A1205 film, but recently Hf02 film, 1^810* film: 3, etc. It is better and attracts attention. To deal with the processing conditions of such a High-k film, Japanese Patent Laid-Open Publication No. 2005-45 1-26 (Patent Document 1). Reveals a resist pattern, a reflective (polysilicon) film, a high-k film, and an insulating film (the film structure of the Si 02 film) formed on a germanium substrate, and etches time and plasma density using a gas containing BC13 and Ar. In the above-mentioned prior art, the above-mentioned prior art is carried out, and the object of the present invention is to be solved by the prior art. [Patent Document 1] JP-A-2005-45 126. Although the treatment with High-k has revealed conditions for improving the shape controllability, the conditions for improving the reproducibility are not fully considered. The semiconductor substrate placed on the stage in the processing chamber in the vacuum vessel In the case of the sample application treatment, the temperature conditions of the components in the processing chamber to be the sample stage and the inside of the processing chamber are detailed. That is, the material film for forming the multilayer structure of the above wiring structure is higher (the following two films, Ta2 〇) 5 The HfSiOx film is as disclosed in the prior art to prevent the film, the ruthenium, etc., and the etching of the multilayer film by the gas film formation is stabilized into, for example, the alignment wafer 2 1 2 , the sample or Considering the film structure of the high-k and metal gate film, for example, using -6-1364053 'high-k and metal gate film, the temperature conditions during processing are more severe. If the process is not performed accurately, the etch rate or The accuracy of the shape is reduced, which impairs the processing efficiency or productivity. This is because the reactivity of the film material is smaller than that of the film used to realize the gate structure, that is, the ruthenium film (polycrystalline ruthenium film). When the processing speed is increased, the temperature of the surface of the sample to be processed must be increased. On the other hand, if the surface of the sample is treated as a high temperature, the photoresist is used as a mask above the film having the wiring structure of φ. The film may be deteriorated such as softening or deformation, and the function as a mask is lowered, and there is a problem that the shape cannot be realized with high precision. Moreover, in order to increase the processing speed, the 'temperature' is improved and the shape control property is improved. Increasing the supply of high-frequency power to the bias potential of the electrode in the sample stage increases the charge damage to the film structure being processed, or increases the etching of the upper mask. Further, when the treatment is carried out as a film structure comprising a film composed of a high-melting-point metal material, the reaction φ product produced by the compound containing the materials is produced at a temperature lower than the surface temperature of the sample. Then, it will adhere to the components constituting the inner wall of the processing chamber and accumulate. The resulting product will be peeled off due to temperature changes or interaction of plasma, and there is a tendency to adhere to the surface of the sample to become a foreign matter, so it is necessary to suppress the generation. The attachment of the object, that is, the temperature of the inner wall of the treatment chamber must be raised to the temperature of the sample stage. However, when the treatment is performed at a high temperature in order to improve the efficiency as described above, it is necessary to have a structure for making the inner wall of the treatment chamber higher. Processing device construction is more complicated' and increases manufacturing costs. In addition, when the surface of the vacuum vessel exceeds 50 °C, it is necessary to have safety equipment. It is necessary to install the necessary heat-insulating materials, etc. 1364053, and there must be redundant equipment, and there is also a space for installation, which causes an increase in installation cost. . SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma processing apparatus or a plasma processing method which can etch a multilayer film structure constituting a gate structure with high precision and high efficiency. Or a plasma processing device that provides a low cost and simple construction. Means to solve the problem

The above object is achieved by (the scope of patent application). [Embodiment] Hereinafter, embodiments of the present invention will be described using the drawings. Embodiment 1 A processing chamber of the present invention will be described using Fig. 1 . Fig. 1 is a cross-sectional view showing the structure of an embodiment of the plasma processing apparatus of the present invention.

In the figure, the plasma processing apparatus 100 includes a vacuum container 101, an electromagnetic wave supply means disposed at the upper portion, and a vacuum exhaust means 107 disposed at a lower portion of the vacuum container 101. Further, the vacuum container 101 has a space having a substantially cylindrical shape inside, and a processing chamber for processing a sample to be processed is disposed inside, and a side wall portion having a rectangular shape is connected to the sample after being carried to a reduced pressure. The vacuum carrying container 1〇4 of the internal space. The processing chamber in the vacuum chamber 101 is connected to a transfer chamber disposed inside the vacuum transfer container 104, and is opened and closed during or after the treatment by a switching means to be described later. That is, the -8 - 1364053 atmospheric gate valve 111 which is opened and closed between these is connected or disconnected. When the gate valve 111 is placed, the pressure between the space inside the chamber and the space inside the processing chamber is substantially the same. When the gate valve 111 is opened, the sample, i.e., the wafer, is transported from the inside of the transfer chamber to the sample stage 112 disposed inside the processing chamber. The electromagnetic wave supply means disposed above the vacuum container 101 is provided with a means for generating an electric field in the processing chamber by generating a radio wave of a specific frequency, and a means for generating a magnetic field by the φ solenoid coil 103 or the like to supply a magnetic field. The electric field supply means of the present embodiment is a waveguide 113 disposed above a member constituting a ceiling surface of the vacuum chamber 101, and a magnetron 114 for plasma excitation disposed at the tip end of the waveguide '113; Tube 114 produces microwaves that are directed through the waveguide 113 into the processing chamber. Further, the lower end portion of the waveguide 113, that is, the ceiling member of the processing chamber, has a flat plate 115 which is configured to conduct the propagated microwave to the lower processing chamber side and is made of a dielectric such as quartz; and is disposed in the quartz Immediately below the flat plate, the process Φ to be supplied is dispersed in the processing chamber by the processing gas, and the air jet plate 1 16 having the plurality of holes for introduction is formed. The space below the air ejecting plate 116, that is, the space formed above the sample stage 112 is a discharge chamber 117, and the supplied processing gas is supplied by the radio wave transmitted through the quartz flat plate 115 and the magnetic field supplied from the magnetic field generating unit. Interact to form a plasma. Further, a space between the quartz plate 115 and the air plate 1 16 is formed with a small gap therebetween, and the processing gas to be supplied to the discharge chamber 117 is first supplied to the space to pass through the air plate 116 to communicate the space and the discharge chamber. 117, through the above-mentioned holes of the processing gas, and -9 - 1364053 flows into the discharge chamber 117. The space is a buffer chamber 118 provided by dispersing the processing gas from the plurality of holes and flowing into the discharge chamber 117. This processing gas is supplied from the controller 121 for supplying the fluid to the processing chamber via the processing gas line 119 and the processing gas shutoff valve 120. As a result, the processing gas is dispersed from the plurality of holes and introduced into the discharge cells 117. At the same time, the holes are mainly disposed at the position where the sample is placed on the sample stage 112, and the movement of the buffer chamber 118 which can more uniformly disperse the gas is performed. It is possible to find a more uniform plasma density. On the outer peripheral side of the quartz flat plate 115 and the air ejecting plate 1, a lower ring 122 is disposed, and the lower ring 122 is internally provided with a gas passage that communicates with a gas line 194 that allows the processing gas to flow to the buffer chamber 118. Further, below the air ejecting plate 116, inside the vacuum container disposed to contact the lower ring 122 and the lower surface of the air ejecting plate 116, a discharge outdoor side wall member 1 23 and an inner side wall member which face the plasma to form the discharge chamber 1 17 are disposed. 1 24 . Further, in the present embodiment, the inner side wall member 1 24 and the outer side wall member 1 2 3 have a substantially cylindrical shape and are formed to be almost concentric. The outer peripheral member 1 2 3 outer peripheral surface is wound with a heater 134 disposed to adjust the temperature of the inner side wall member 124 by adjusting the temperature of the outer side wall member 123. Further, the outer side wall member 1 2 3 is peripherally On the side, a discharge chamber base plate 125 is disposed underneath the discharge chamber base plate 125, and is connected to a vacuum chamber portion disposed therebelow. Further, the inner wall member 124 also functions as a ground electrode for the sample stage 112 which reaches the plasma electrode task inside the discharge chamber U7, and has a necessary area for the plasma potential to be stabilized. In order to function as a grounding electrode, heat conduction and electrical conductivity must be sufficiently ensured between the side wall members 1 2 3 or -10- 1364053 cover member 1 22 outside the contact connection. In the present embodiment, the temperature of the wall surface constituting the vacuum chamber is adjusted to adjust the interaction between the surface thereof and the particles, gases, and reaction products contained in the plasma and plasma. This temperature ensures a higher temperature than the temperature of the sample stage. By appropriately adjusting the interaction of the plasma with the wall surface of the vacuum chamber facing it, the plasma characteristics such as plasma density or composition can be made into a desired state. Further, below the discharge cell base plate 125, a lower container wall 15 constituting a lower portion of the φ of the vacuum container; and a bottom container wall 16 which is connected to the lower surface of the vacuum container; and an inner lower processing chamber 128; The inside thereof is in contact with the inner processing chamber 126 connected to the lower surface of the discharge chamber base plate 125; and the plurality of beams connected to the lower portion of the inner processing chamber 126 to support the sample stage 112 in the space in the processing chamber, that is, Electrode base 127; this is used to form a processing chamber. Below the bottom container wall 16, a vacuum venting means 107 for venting the inside of the vacuum vessel is provided. The vacuum exhaust device φ 107' of the present embodiment is disposed at a central portion of the inner lower processing chamber 128 and the bottom container wall 16, and is disposed below the opening of the gas in the discharge processing chamber. a plurality of plate-shaped flaps (flap) that rotate inside to adjust the cross-sectional area of the opening to adjust the flow rate of the flow rate adjusting valve 129; and a main pump such as a turbo molecular pump that is connected to the passage outlet and is used for exhausting the gas in the processing chamber An exhaust line formed by 130; and a plate-shaped valve plate 131 disposed in the processing chamber to cut off below the opening. The pipe 132 connected to the processing chamber is provided with a pressure gauge 133 for pressure adjustment of the processing chamber. The exhaust main pump 130 and the pressure gauges 133, -11 - 1364053 are selected to have a function required to achieve 0.1 Pa or less. Fig. 2 shows details of the periphery of the sample stage 112. Fig. 2 is an enlarged longitudinal sectional view showing the structure of the periphery of the sample stage in the embodiment shown in Fig. 1. The inside of the lower electrode 211, which is disposed inside the sample stage 112 and composed of a conductive member, is provided with a groove 213 for circulating a refrigerant, and the purpose is to form a semiconductor wafer to be processed by forming a plasma in the discharge test 117. At 212 o'clock, temperature adjustment is performed. The refrigerant groove 213 is connected to the temperature adjustment temper 217 via a flexible tube 218 for connection. The temperature regulator 217 is provided with a temperature adjustment unit 219 composed of a heat exchanger for temperature adjustment and a refrigerator, and a circulation pump 220. A dielectric film 214 for electrostatic adsorption is provided on the sample stage 112, and the semiconductor wafer 212 is adsorbed to the lower electrode 211 by the electrostatic adsorption DC power supply 215 connected to the lower electrode 211 to perform temperature adjustment. Further, in order to control the reaction of the material to be etched on the surface of the semiconductor wafer 212, the high-frequency power source 2 16 is connected in parallel to the DC power source 2 15 . In order to protect the surface of the lower electrode 211 other than the semiconductor wafer 212, a cover 221 is provided on the upper side. In the transfer chamber in the vacuum transfer container 104 after the pressure reduction, the sample to be processed, which is transported by the robot arm in the transfer chamber, that is, the semiconductor wafer 212 is transferred to the vacuum exhaust device 107 to be decompressed. It is placed on the sample stage 112 in the processing chamber equal to the transfer chamber. The placed semiconductor wafer 212 is placed on the dielectric film 2M and is adsorbed and held on the dielectric film by electrodes supplied from the electrostatic adsorption DC power source 215 to the dielectric film 214 of the power source. 214 above. -12- 1364053 • The electric field generated by the processing gas introduced into the discharge chamber 117 in this state interacts with the microwave supplied through the quartz plate 115 and the air ejecting plate 116, and interacts with the electric field supplied from the solenoid coil 103. The processing gas is excited to generate plasma in the discharge chamber 117. This plasma is used to process the semiconductor wafer 212 on the sample stage 112. Further, during the processing, the lower electrode 211 which is disposed in the sample stage 112 and is made of the conductive member is supplied with high-frequency power of a specific frequency from the high-frequency power source 216, and a desired bias is formed on the surface of the semiconductor wafer 212 φ. The piezoelectric position promotes processing to achieve the desired processed shape to attract charged particles in the plasma to the surface of the semiconductor wafer 212. In the process, the inner wall member 124 of the discharge chamber 1 17 is maintained at a specific temperature by the heater 134 described above. Further, even during the process, the vacuum exhaust gas device 107 operates, and the supplied processing gas and plasma are discharged to the outside of the processing chamber together with the generated product generated by the treatment, thereby maintaining the inside of the processing chamber at a specific level. The pressure is rampant. Fig. 3 is a view showing a film structure for a wiring structure of a semi-Φ conductor device for the plasma treatment of the present invention. Fig. 3(a) is a schematic view showing the state of the film structure before processing, which is formed on the surface of the semiconductor wafer 212 which is a processing target. In the figure, the film structure is such that the ruthenium substrate 311 is a lower substrate, and a Hi gh-k film 312 is disposed above the gate film 313 as a gate of the semiconductor device, and is further provided thereon. The oxide film 3 1 4 after the patterning of the mask. The gate film 3 1 3 is made of titanium (Ti), nickel (Ni), molybdenum (Mo), ruthenium (Ru), hafnium (Hf), molybdenum (Ta), tungsten (W), antimony (Re), A monomer or a composite film composed of a high melting point metal material such as iridium (Ir), platinum (Pt), lanthanum (La), lanthanum (Eu), or mirror (Yb). Further, above these, a photoresist 315 composed of an organic material such as a resin which is masked during the processing of the oxide film 313 can be disposed. Fig. 4 is a view showing the material of the film 315 which is patterned as a mask and which is a resist mask. In the film structure, after the photoresist film 214 is etched by using the photoresist 3 1 5 as a mask, the etched shape of the oxide film 314 is used as a mask, and the gate is disposed further below. The film 313 and the Hi gh-k film 3 1 2 are etched. The shapes after processing are shown in Fig. 3 and Fig. 4(b), respectively. Fig. 5 is a view showing the effect of the treatment temperature change on the pressure change in the treatment chamber under the condition of processing the membrane structure shown in Fig. 3 or Fig. 4 for the plasma processing apparatus of the embodiment shown in Fig. 1. Chart "This diagram shows the case where (1) the gate material is ruthenium (Ta) when reacted with hydrogen bromide (HBr) gas, and (2) the gate material is chlorine (C12) gas when (H f) In the case where the reaction is carried out, (3) the case where the gate material is ruthenium is reacted with hydrogen bromide gas, and (4) the case where the gate material is tantalum carbide (TaC) is reacted with hydrogen bromide gas. As shown in the figure, when any one of (1) to (4) is less than 0.1 Pa in the treatment chamber, the material constituting the film volatilizes and the temperature of the sample changes rapidly. That is, the lower limit temperature at which the surface of the sample can volatilize at a certain ratio is below O.lPa, especially at a pressure below 〇6Pa. Especially in the case of (1), (2), and (4), it will change rapidly to 60 °C or less. The temperature of the semiconductor wafer 2 1 2, that is, if the temperature of the lower electrode exceeds -14 - 1364053 6 ° C, the lower electrode substrate 211 is aluminum, and the dielectric film 214 is alumina, relative to aluminum. The coefficient of linear expansion is 2·3χ1 (Γ5 (1TC), and the coefficient of linear expansion of alumina is 7.1 χ1 (Γ6 (1 plant C); when the electrode temperature is 65 °C and the temperature difference is 45 °C, it will produce approximately 〇.2mm difference in size. If the force is determined to be lxl05g/mm2, it will be damaged if the allowable force exceeds 5x 104g/mm2. Therefore, for structural reasons, the use of materials above 60°C must be changed. The structure is changed, but the thermal reactivity of the material with a lower coefficient of linear expansion than φ is also deteriorated, so that the temperature rise due to plasma heating occurs. Further, when the surface of the sample is treated at 60 ° C or higher, the resist is covered. The deterioration of the cover will become large, and as the processing shape of the film under the mask, the processing accuracy will be lowered. Especially in the case of a photoresist composed of a hydrocarbon-based material, the deformation or softening thereof becomes large. At the same time, if it is supplied to the sample stage for higher temperature Electrode bias power is selected with the lower resist film ratio decreases, so that the edge becomes large engraved uranium reduction of machining accuracy.

Therefore, in the present embodiment, the processing chamber is treated to have a pressure of 0.1 Pa or less, and it is preferable to maintain the pressure at 0.06 Pa or less to treat the sample, thereby suppressing the above problems and realizing the processing conditions. That is, maintaining the above pressure conditions and treating the surface of the sample at 60 ° C or lower can improve the reactivity of the film material to be treated and can increase the processing speed while achieving deterioration of the resist mask and improving the processing accuracy. As a range of such conditions, the lower limit of pressure from the viewpoint of exhaust efficiency is 〇_025Pa, ideally 〇.〇3Pa, and the lower limit of the temperature at which the specific volatile amount is reached is 45 °C. In the figure 5, the range above the line of '25 、, 〇25Pa, 45°C, 〇1 P a, 60 °C, is treated in the range of 6 〇〇c or less, which can be achieved. The above effects and effects. -15- 1364053 Specifically, 'set the temperature T of the sample or the sample stage 112 at Τ = 200ρ + 40 (i) Τ : temperature (°C) P : above the line of pressure (Pa)', that is, τ = 6 The range below 〇°c is the ideal condition range for processing. In this embodiment, the selection of the processing method of the sample or the degree of freedom of setting can be increased by increasing the range of pressure and temperature at which such processing conditions can be realized, and in the present embodiment, the inner side wall member 124 of the discharge chamber In the processing chamber such as the inner processing chamber 126, the temperature of the member facing the plasma is maintained higher than the sample stage 112 or the sample to perform the treatment. At this time, as shown in the figure, by maintaining the pressure in the processing chamber below 0.1 Pa, the volatility of the reaction product generated in the processing chamber is increased, thereby suppressing the reattachment of the product to the surface of the processing chamber, and Foreign matter caused by this accumulation. The temperature of the member disposed in the processing chamber facing the plasma is adjusted to be as high as the surface temperature of the sample facing the plasma in the treatment placed on the sample stage, thereby suppressing the deposition of the generated substance due to the treatment. The surface of the component inside the chamber is treated. On the other hand, in the present embodiment, in order to adjust the temperature of the member in the processing chamber in this manner, a heater 134 that surrounds the outer side wall surface of the discharge outdoor side wall member 213 and is in contact with the heater 134 is disposed; The heat is transmitted to the inside of the processing chamber, and the surface temperature of the processing chamber member such as the inner wall member 146 is adjusted to be higher than the surface temperature of the sample, that is, the semiconductor wafer 212. -16- 1364053 • At this time, 'When the surface temperature of the sample exceeds a higher temperature, for example, 60 °C, the temperature of the inner wall member 1 24 in the processing chamber must also be set to be above this temperature' and the temperature of the heater 134 is changed. Higher. In order to reduce the risk of the heating part being contacted by the user or the operator, it is necessary to ensure a safety measure by covering the outdoor wall surface with a heat insulating member or the like, and the structure is made more complicated. It is also necessary to set a space, and to increase the setting and application. cost. In the present embodiment, the temperature in the treatment of the sample is set to be φ of 50 ° C or less, whereby the treatment device that adjusts the temperature of the treatment chamber wall to be higher than the temperature can lower the heating device than before. It does not require heat-insulating members of the treatment chamber, etc. In this case, when the pressure in the treatment of the sample is 0. IPa or less, it is preferably 〇6〇, more preferably 0_05Pa or less, and the film having the film of the high-melting-point metal material is processed as shown in FIG. At the time of construction, the surface of the sample in this treatment can be treated below the above temperature, and a processing device of a simpler configuration can be used to reduce the generation of foreign matter in the process and control the productivity.

Further, in order to achieve a low voltage of less than 1 P a , the inductance from the discharge space on the wafer to the exhaust pump is increased, so the distance must be minimized. In this case, it is preferable to place the lower electrode in the center of the processing chamber as shown in Fig. 1, and the electrode temperature is also 60 °C in terms of the heat resistance temperature of the cylinder or the sensor of the transporting and pushing mechanism (not shown). The following is better. According to the figure, in the case of processing, the prior device uses hydrogen bromide as an etching gas to process at a lower temperature, but by using it as a low pressure, the chlorine gas can also be etched below 60 °C. Thereby, the selection range of the gas type for etching is increased, and the control of the other processing shapes can be controlled in many ways. -17-1346053 [Simplified description of the drawings] [Fig. 1] shows the structure of the embodiment of the plasma processing apparatus of the present invention. Slightly sectional view. [Fig. 2] is a schematic enlarged view showing the structure around the sample stage in the embodiment shown in Fig. 1. [Fig. 3] A schematic view of a film structure for realizing a wiring structure in a semiconductor device, in the embodiment shown in Fig. 1. [Fig. 4] A schematic view of a film structure for a wiring structure in a conductor device, for the embodiment shown in Fig. 1. [Fig. 5] The plasma processing apparatus of the embodiment shown in Fig. 1 shows the effect of the change in the treatment temperature on the pressure change in the treatment chamber under the condition of processing the membrane structure shown in Fig. 3 or Fig. 4 chart. [Description of main component symbols] 111: Atmospheric gate valve 112: Sample stage 1 1 3 : Waveguide 1 1 4 : Magnetron 115: Flat plate 116: Air plate 1 17 : Discharge chamber Π 8 : Buffer chamber -18 - 1364053 119 : Treatment Gas line 120: shut-off valve 1 2 1 : controller 122: lower ring 123: discharge outdoor side wall member 124: inner side wall member

125: discharge cell base plate 1 2 6 : inner processing chamber 1 2 7 : electrode base 1 2 8 : inner lower processing chamber 1 2 9 : flow regulating valve 1 3 0 : exhaust main pump 1 3 1 : valve 1 3 2 : piping 1 3 3 : pressure gauge

1 3 4 : Heater 211 : Lower electrode 2 1 2 : Wafer 2 1 3 : Refrigerant circulation groove 214 : Dielectric film 2 1 5 : Electrostatic adsorption DC power supply 2 1 6 : Local frequency power supply 2 1 7 : Cycle Thermostat 2 1 8 : Flexible tube -19- 1364053 219 : Temperature adjustment unit 220 : Circulation pump 221 : Upper side cover 3 1 1 : 矽 Substrate 312 : High, k Film 3 1 3 : Gate film 3 1 4: Metal-containing gate film

3 1 6 : Resistive mask

-20-

Claims (1)

1364053 Patent application No. 096106455 Patent application for amendment of the scope of patent application in the Republic of China on November 17, 1999. Patent application scope 1. The method of plasma treatment is to arrange the sample in the processing chamber inside the vacuum container. The plasma is processed in the room, and the sample is a film structure having a high melting point metal film and a High-k material film disposed under the surface; and the sample is characterized by: a step of setting the pressure P in the processing chamber to 〇1 Pa or less; adjusting the temperature of the sample in the above treatment to 60 ° C or lower, adjusting to a temperature higher than 200 P + 40; and treating the processing chamber The temperature of the inner wall surface is adjusted to be higher than the temperature of the sample in the above treatment. The plasma processing method according to claim 1, wherein the film below the high melting point metal film contains a film of the Hi-k material of (Hf). 3. The method of treating a credit according to the first or second aspect of the patent application, wherein the above high melting point metal film is made of titanium (Ti) or nickel (Ni) 'molybdenum (Mo) '钌(Ru), Monomer or plural in (Hf), molybdenum (Ta), tungsten (w), chain (Re), iridium (ir), uranium (Pt), lanthanum (La), europium (Eu), mirror (Yb) The plasma processing method according to the first or second aspect of the invention, wherein the vacuum container is provided with a substrate made of aluminum or an alloy thereof and disposed on the surface thereof. a sample stage of an insulator film made of ceramic, wherein the sample is placed on the insulator film, and the temperature of the sample is adjusted to 60 ° C or less by using a temperature adjusting means disposed in the substrate. The method of embedding plasma according to the first or second aspect, wherein chlorine (C1) or hydrogen bromide (HBr) is supplied into the vacuum vessel, and the gate film is etched to form the gate structure. 6. A plasma processing apparatus, comprising: a processing chamber disposed in a vacuum vessel to form a plasma inside thereof; and a sample stage disposed in a lower portion of the processing chamber, on which the plasma is placed The sample to be processed is a film structure having a metal film having a high melting point and a High-k material film disposed under the surface, and a heater 'positioned in the processing chamber for the above-mentioned processing chamber The surface of the member facing the plasma is heated to a temperature higher than the temperature of the sample; the plasma is formed in the processing chamber so that the pressure P in the processing chamber is equal to or less than 0.1 Pa, and the above treatment is adjusted. The temperature of the sample T was 60 ° C or lower and the temperature of the sample was adjusted to be higher than 200 P + 40 to carry out the treatment of the above sample. 7. The plasma processing apparatus according to claim 6, wherein the film below the high melting point metal film is a film of the above Hi-k material containing hafnium (Hf). 8. The plasma processing apparatus according to claim 6 or 7, wherein the high melting point metal film is made of titanium, nickel, molybdenum, niobium, tantalum, tungsten, lanthanum, cerium, platinum. , 镧, 铕, 单体 单体 单体 单体 单体 单体 单体 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. A sample stage having a substrate made of aluminum or an alloy thereof and an insulator film made of a ceramic disposed on the surface thereof is disposed in the vacuum container. The sample is placed on the insulator film, and is supplied inside the substrate. The temperature of the sample is adjusted to 60 ° C or lower by adjusting the refrigerant to a specific temperature. 10. The plasma processing apparatus according to claim 6 or 7, wherein chlorine or hydrogen bromide is supplied into the vacuum container, and the gate film is etched to form the gate structure. .