1360892 八、本案若有化學式時，請揭示最能顯示發明 特徵的化學式： 無 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種發光元件，尤其關於一種可縮短p/n 電極距離，增加光取出效率之發光二極體結構。 【先前技術】 發光二極體包含以能夠放射出特定波長之光線的p-n 接面組成如同質結構（Homostructure)、單異質結構（Single Heterostructure;SH)、雙異質結構（Double Heterostructure ; DH)、或是多重量子井（Multiple Quantum Well ; MQW)等結 構所堆疊而成的蠢晶結構。由於發光二極體具有低耗電 量、低散熱量、操作壽命長、财撞擊、體積小、反應速度 快、以及可發出穩定波長的色光等良好光電特性，因此常 應用於家電、儀表之指示燈、光電產品之應用光源、以及 光電通訊領域等。 目前發光二極體之p/n電極分別形成於不同平面上， 以達到電流擴散的效果。另外，為了提昇發光效率，可利 5 1360892 用表面粗化技術將發光效率提昇30%以上。 【發明内容】 本發明之一目的在縮短p/n電極間之距離，減少為增 加歐姆接觸面積而延伸之金屬電極所造成之遮光區域，亦 增加電流擴散的效果。1360892 VIII. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: Nine, invention description: [Technical field] The present invention relates to a light-emitting element, and more particularly to a shortening of the p/n electrode distance A light-emitting diode structure that increases light extraction efficiency. [Prior Art] A light-emitting diode comprises a pn junction which is capable of emitting light of a specific wavelength, such as a homostructure, a single Heterostructure (SH), a double heterostructure (DH), or It is a stupid crystal structure in which multiple quantum wells (Multiple Quantum Wells; MQW) are stacked. Since the light-emitting diode has good photoelectric characteristics such as low power consumption, low heat dissipation, long operating life, financial impact, small volume, fast reaction speed, and color light which can emit stable wavelength, it is often used for indications of household appliances and meters. Light source, application source of optoelectronic products, and field of optoelectronic communication. At present, the p/n electrodes of the light-emitting diodes are respectively formed on different planes to achieve the effect of current spreading. In addition, in order to improve the luminous efficiency, Kelly 5 1360892 uses the surface roughening technology to increase the luminous efficiency by more than 30%. SUMMARY OF THE INVENTION An object of the present invention is to reduce the distance between p/n electrodes and reduce the light-shielding region caused by the metal electrodes extending to increase the ohmic contact area, thereby increasing the effect of current spreading.
本發月之另目的係在將晶粒尺寸縮小，同時在遮光 金屬電極下方形成反射層，增加光一次反射而出光的機 率，提升光取出效率。此外，因晶粒尺寸縮小，可增加每 單位磊晶片晶粒產出量，降低生產成本。Another objective of this month is to reduce the grain size while forming a reflective layer under the light-shielding metal electrode, increasing the probability of light being reflected once and emitting light, thereby improving light extraction efficiency. In addition, due to the reduction in grain size, the grain yield per unit of the wafer can be increased, and the production cost can be reduced.
根據本發明之實施例，一發光二極體至少包含一永久 基板、一絕緣層、一接合層、一磊晶結構、一第—反射層、 一第二反射層、一第一電極及一第二電極。其中，該永久 基板可為-導熱性基板、導㈣基板，或透純基板。該 接合層位於永久基板之上。該絕緣層位於永久基板和接合 層之間，可進一步包含-單層或多層材料組合。該蠢晶結 構包含-第-電性半導體層、—活性層及_第二電性半導 體層。第-電極係形成於第一電性半導體層之上，且有一 【：：射層位於二者之間;第二電極係形成於第二電性半 導體層之上，且有一第-后汾思a狄 反射層位於二者之間。一保護戶 :覆蓋於蟲晶結構上未被第-電極及第二電極覆蓋之； 域0 1360892 【實施方式】 本發明揭露一種p/n金屬電極位於同一平面上，縮短p/n 電極間之距離’減少為增加歐姆接觸面積而導致金屬電極 所造成之遮光區域’也可幫助電流擴散。為了使本發明之敘述 更加詳盡與完備’可配合第1圖至第7圖之圖声，參照下列描述。 第1至4圖為習知發光元件之結構側視圖。請參照第1 圖，習知發光元件’例如一發光二極體1〇〇，包含一成長基 板丨〇1，其材料可為砷化鎵（GaAs)、矽、碳化矽（SiC)、藍 寶石、磷化銦或磷化鎵。接著，於成長基板101上形成磊 晶結構10。磊晶結構1 〇係藉由一磊晶製程所形成，例如有 機金屬氣相沉積磊晶法（MOC VD)、液相磊晶法（LPE)或分子 束磊晶法（MBE)等磊晶製程。此磊晶結構1〇至少包含一第 一電性半導體層103，例如為一 n型填化銘鎵銦 (AlxGai-x)〇.5ln〇.5P層；一活性層104，例如為峨化銘鎵銦 (AlxGa丨-χ)0 5Ιη〇·5Ρ所形成的多重量子井結構；以及一第二 電性半導體層105 ’例如為一 ρ型磷化铭鎵銦 (AlxGa〗_x)0 5Ιη〇·5Ρ層。另外，本實施例之活性層1〇4可由 例如同質結構、單異質結構、雙異質結構、或是多重量子 井結構所堆疊而成。 請參照第2圖。接著，於磊晶結構1 〇上形成一第二電 性接觸層106及一反射層107。第二電性接觸層1〇6的材料 可為氧化銦錫（Indium Tin Oxide)、氧化銦（Indium Oxide)、 氧化錫（Tin Oxide)、氧化録錫（Cadmium Tin Oxide)、氧化 7 1360892 鋅（Zinc Oxide)、氧化鎮（Magnesium Oxide)或氮化鈦 (Titanium Nitride)。反射層l〇7可為金屬材料，例如铭、金、 始、辞、銀、錄、錯、钢、錫或其合金；也可由金屬和氧 化物組合而成，例如氧化銦錫/銀（ITO/Ag)、氧化銦錫/氧化 鋁/銀（IT0/AlOx/Ag)、氧化銦錫/氧化鈦/氧化矽 (ITO/TiOx/SiOx)、氧化鈦/氧化矽/铭（TiOx/SiOx/Al)、氧化銦 錫/氮化矽/鋁（ITO/SiNx/Al)、氧化銦錫/氮化矽/銀 (ITO/SiNx/Ag)、氧化銦錫/氮化矽/氧化鋁/鋁 (ITO/SiNx/Al2〇3/Al)、或氧化銦錫/氮化石夕/氧化紹/銀 (IT0/SiNx/Al203/Ag)。 再參照第3圖，於一永久基板110上形成一絕緣層1〇9 及一接合層108。其中永久基板U〇其材料可為矽（si)、銅 (Cu)、鋁（A1)、鉬（Mo)、金（Au)、銀（Ag)等導電性材料。絕 緣層109由一單層或多層之絕緣材料所組成，其材料可為 氧化鋁（A10x)、氧化矽（Si〇x)、氮化矽（SiNj、類鑽薄膜、 碳化矽（SiC)或氮化鋁（AiN)等，其厚度約為1_3〇μη^接 合層108的材料可以是如銀、金、鋁、銦等金屬材料，或 為自發性導電向分子，或高分子中摻雜如鋁金鉑、鋅、 銀、鎳、鍺、銦、錫、鈦、鉛、銅、鈀或其合金所組成之 導電材質。 參照第4圖’接著，將如第2圖所示具有反射層1〇7的蟲晶結 構接合於如第3圖所示的接合層⑽之上，再藉由雷射剝離技術、 姓刻製程或化學機械研磨製程等方式移除成長基板（圖未 8 1360892 示）。成長基板m移除後，裸露出蟲晶結構ι〇之第 性半導體^ U)3 %表面，再於其上形成第_電性接觸層 102。第一電性接觸層1〇2的材料可為氧化銦錫㈨d_Tin Oxide)、氧化銦（Indium 〇xide)、氧化錫（Tin 〇“如卜氧化 鎘錫（Cadmium Tin 0xide)、氧化鋅（Zinc 〇xide)、氧化鎂 (Magnesium 〇xide)、氮化鈦（τ—购他）、錯金⑼ 或鍺金鎳（Ge/Au/Ni)所形成之薄膜，並可選擇性地於該薄膜 上以蝕刻製程形成特定圖案。 如第4圖所示，將磊晶結構1〇自第一電性接觸層1〇2、 第一電性半導體層1〇3、活性層1〇4、第二電性半導體層 由上而下蝕刻至露出第二電性接觸層1〇6上表面以形成隔 絕道116及發光二極體側邊平臺a、b，並將磊晶結構區域 分成第一區域A及第二區域b二部份。再將第—區域八之 第電丨生接觸層上表面及/或下表面姓刻成粗糙面。在 一較佳實施例中，第一區域A之第一電性接觸層i 02上表 面及/或下表面亦可不為粗糙面。 接著’利用熱蒸鑛（Thermal Evaporation)、電子束蒸鑛 (E'beam)或離子濺鍍（Sputtering)等方法，於第一區域a之 第一電性接觸層102上形成一第一電極112，並於第二區域 B之第—電性接觸層102上形成一第二電極113。第二電極 113也可覆蓋第二區域B之磊晶結構側邊。最後，再以一 保護層114覆蓋於元件1〇〇部份第一電性接觸層1〇2上表 面及第一區域A之磊晶結構側邊，即完成習知之發光二極 9 體 100。. 〜以下僅就本發明實施例與習知發光二極體之差異處進 行說明’相似處在此則不再贅述。如帛5圖所示，將發光 二極體週邊區域從第—電性接觸層1G2、第—電性半導體層 二3、活性詹104、第二電性半導體層1〇5由上而下餘刻^ 路出第二電性接觸層1G6上表面。再將第-電性接觸層102 上表面及/或下表面蝕刻成粗糙面。第一電性接觸層ι〇2上 表面及/或下表面亦可不為粗糙面。 接著利用熱蒸鑛（Thermal Evaporation)、電子束蒸鑛 (E-beam)或離子濺鍍（Sputtering)等方法’於第一電性接觸 層102上形成一第—反射層U2b及一第二反射層U3b後， 以一保護層114覆蓋於元件200部份上表面及磊晶結構側 邊區域。再分別於第一反射層112b及第二反射層1131?上 形成一第一電極112a及一第二電極113a。第二電極U3a 沿著磊晶結構側邊區域和第二電性接觸層丨〇6電性連接， 即完成本實施例一之發光二極體2〇〇。 第7圖繪示根據本發明之第二實施例之覆晶式發光二 極體之結構側視圖。先參照第6圖，於磊晶結構1〇上形成 一第二電性接觸層106 ’其材料可為氧化銦錫（Indium Tin Oxide)、氧化銦（Indium Oxide)、氧化錫（Tin Oxide)、氧化 鎘錫（Cadmium Tin Oxide)' 氧化鋅(.zinc Oxide)〔氧化鎂 (Magnesium Oxide)或氮化鈦（Titanium Nitride)。再於一永久 基板上形成一絕緣層及一接合層（圖未示）。其中永久基板其 材料可為藍寶石（Sapphire)、碳化矽（Sic)、玻璃、石英、氮 化鋁（A1N)等透光性材料。絕緣層由一單層或多層之絕緣材 料所組成，其材料可為氧化鋁（Α10χ)、氧化矽（si〇x)、氮化 矽（SiNx)、類鑽薄膜、碳化矽（SjC)或氮化鋁（Ain)等其 厚度約為1-30μηι。接合層的材料可以是如自發性導電高分 子’或南分子中摻雜如鋁、金、鉑、鋅、銀、鎳、鍺、銦、 錫、鈦、鉛、銅、鈀或其合金所組成之導電材質。若透光 性永久基板為絕緣物質所組成時，絕緣層可省略。 如第七圖所示，完成之磊晶結構與由透光性永久基板 110、絕緣層109及接合層108所組成之單元接合，並移除 成長基板後，裸露出磊晶結構之第一電性半導體層1〇3的 表面。接著’於第一電性半導體層103上形成一第一電性 接觸層102。將發光二極體週邊區域從第一電性接觸層 102、第一電性半導體層1 〇3、活性層1 〇4、第二電性半導 體層105由上而下蝕刻至露出第二電性接觸層1〇6上表 面’在此實施例中，亦可將第一電性接觸層1〇2上表面及/ 或下表面蝕刻成粗糙面。再於第一電性接觸層丨〇2上形成 一第一反射層112b及一第二反射層ii3b後，以一保護層 u4覆蓋於第一電性接觸層1〇2未被第一反射層與第二反 射層覆蓋之區域。再分別於該第一反射層112b及該第二反 射層113b形成一第一電極112a及一第二電極113a。且第 二電極Π 3a沿著磊晶結構側邊和第二電性接觸層丨〇6電性 連接’即完成本實施例之覆晶式發光二極體300。 1360892According to an embodiment of the invention, a light emitting diode includes at least a permanent substrate, an insulating layer, a bonding layer, an epitaxial structure, a first reflective layer, a second reflective layer, a first electrode, and a first Two electrodes. The permanent substrate may be a thermally conductive substrate, a conductive (four) substrate, or a transparent substrate. The bonding layer is over the permanent substrate. The insulating layer is between the permanent substrate and the bonding layer and may further comprise a single layer or a combination of layers of materials. The doped crystal structure comprises a -first electrical semiconductor layer, an active layer and a second electrical semiconductor layer. The first electrode is formed on the first electrical semiconductor layer, and a [::imposite layer is located therebetween; the second electrode is formed on the second electrical semiconductor layer, and has a first-after thinking A di reflective layer is located between the two. A protector: covering the structure of the insect crystal without being covered by the first electrode and the second electrode; Domain 0 1360892 [Embodiment] The present invention discloses that a p/n metal electrode is located on the same plane, shortening between the p/n electrodes The distance 'reduced to increase the ohmic contact area and cause the light-shielding area caused by the metal electrode' also helps the current to spread. In order to make the description of the present invention more detailed and complete, the following description can be referred to in conjunction with the drawings of Figures 1 through 7. Figures 1 to 4 are side views of the structure of a conventional light-emitting element. Referring to FIG. 1 , a conventional light-emitting element, such as a light-emitting diode 1 , includes a growth substrate 丨〇 1 made of gallium arsenide (GaAs), germanium, tantalum carbide (SiC), sapphire, Indium phosphide or gallium phosphide. Next, an epitaxial structure 10 is formed on the growth substrate 101. Epitaxial structure 1 The lanthanide is formed by an epitaxial process, such as epitaxial process such as organometallic vapor deposition epitaxy (MOC VD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE). . The epitaxial structure 1 〇 includes at least a first electrical semiconductor layer 103, such as an n-type filled indium gallium indium (AlxGai-x) 〇.5ln〇.5P layer; an active layer 104, such as 峨化铭a multiple quantum well structure formed by gallium indium (AlxGa丨-χ) 0 5Ιη〇·5Ρ; and a second electrical semiconductor layer 105' such as a p-type phosphating indium gallium indium (AlxGa _x) 0 5Ιη〇· 5 layers. Further, the active layer 1〇4 of the present embodiment may be stacked by, for example, a homogenous structure, a single heterostructure, a double heterostructure, or a multiple quantum well structure. Please refer to Figure 2. Next, a second electrical contact layer 106 and a reflective layer 107 are formed on the epitaxial structure 1 . The material of the second electrical contact layer 1〇6 may be Indium Tin Oxide, Indium Oxide, Tin Oxide, Cadmium Tin Oxide, Oxidation 7 1360892 Zinc ( Zinc Oxide), Magnesium Oxide or Titanium Nitride. The reflective layer 10 can be a metal material such as Ming, Jin, Shi, Zi, Yin, Lu, Wrong, steel, tin or alloys thereof; or a combination of a metal and an oxide, such as indium tin oxide/silver (ITO) /Ag), indium tin oxide/alumina/silver (IT0/AlOx/Ag), indium tin oxide/titanium oxide/yttria (ITO/TiOx/SiOx), titanium oxide/yttria/Ming (TiOx/SiOx/Al ), indium tin oxide / tantalum nitride / aluminum (ITO / SiNx / Al), indium tin oxide / tantalum nitride / silver (ITO / SiNx / Ag), indium tin oxide / tantalum nitride / aluminum oxide / aluminum (ITO /SiNx/Al2〇3/Al), or indium tin oxide/nitridite/oxidation/silver (IT0/SiNx/Al203/Ag). Referring again to FIG. 3, an insulating layer 1〇9 and a bonding layer 108 are formed on a permanent substrate 110. The permanent substrate U 〇 may be made of a conductive material such as bismuth (si), copper (Cu), aluminum (Al), molybdenum (Mo), gold (Au), or silver (Ag). The insulating layer 109 is composed of a single layer or a plurality of layers of insulating material, which may be alumina (A10x), yttrium oxide (Si〇x), tantalum nitride (SiNj, diamond-like film, tantalum carbide (SiC) or nitrogen. Aluminum (AiN) or the like, the thickness of which is about 1_3 〇μη ^ The material of the bonding layer 108 may be a metal material such as silver, gold, aluminum, indium, or a spontaneous conductive molecule, or a polymer such as aluminum. Conductive material composed of gold platinum, zinc, silver, nickel, bismuth, indium, tin, titanium, lead, copper, palladium or alloys thereof. Referring to Fig. 4 'then, there will be a reflective layer 1 as shown in Fig. 2 The serpentine structure of 7 is bonded to the bonding layer (10) as shown in Fig. 3, and the grown substrate is removed by a laser lift-off technique, a process of etching or a chemical mechanical polishing process (not shown in Fig. 8 1360892). After the growth substrate m is removed, the third semiconductor surface of the insect crystal structure ITO is exposed, and the first electrical contact layer 102 is formed thereon. The material of the first electrical contact layer 1〇2 may be indium tin oxide (n)d_Tin Oxide, indium 〇xide, tin oxide (Tin 〇 “Cadmium Tin 0xide”, zinc oxide (Zinc 〇) Xide), a film formed of magnesium oxide (Magnesium 〇xide), titanium nitride (τ-purchasing), gold (9) or gold-plated nickel (Ge/Au/Ni), and optionally on the film The etching process forms a specific pattern. As shown in FIG. 4, the epitaxial structure 1 is formed from the first electrical contact layer 1〇2, the first electrical semiconductor layer 1〇3, the active layer 1〇4, and the second electrical property. The semiconductor layer is etched from top to bottom to expose the upper surface of the second electrical contact layer 1〇6 to form the isolation track 116 and the light-emitting diode side platforms a and b, and divide the epitaxial structure region into the first region A and the first The second region b is a two-part portion. The upper surface and/or the lower surface of the first electrical contact layer of the first region is patterned into a rough surface. In a preferred embodiment, the first electrical property of the first region A The upper surface and/or the lower surface of the contact layer i 02 may not be rough. Then 'Using Thermal Evaporation, Electron Beam Evaporation (E) A first electrode 112 is formed on the first electrical contact layer 102 of the first region a and formed on the first electrical contact layer 102 of the second region B by a method such as 'beam' or ion sputtering (Sputtering). a second electrode 113. The second electrode 113 can also cover the side of the epitaxial structure of the second region B. Finally, a protective layer 114 is applied over the first electrical contact layer 1〇2 of the device 1 The surface and the side of the epitaxial structure of the first region A, that is, the conventional light-emitting diode body 100 is completed. The following is only a description of the difference between the embodiment of the present invention and the conventional light-emitting diode. Therefore, as shown in FIG. 5, the peripheral region of the light-emitting diode is from the first electrical contact layer 1G2, the first electrical semiconductor layer 2, the active semiconductor 104, and the second electrical semiconductor layer 1〇5. The upper surface of the second electrical contact layer 1G6 is removed from the top to the bottom. The upper surface and/or the lower surface of the first electrical contact layer 102 is etched into a rough surface. The first electrical contact layer ι2 is The surface and/or the lower surface may not be rough. Next, using Thermal Evaporation, electron beam evaporation (E-be) Am) or a method such as ion sputtering, after forming a first reflective layer U2b and a second reflective layer U3b on the first electrical contact layer 102, a protective layer 114 is applied over a portion of the upper surface of the component 200. a first electrode 112a and a second electrode 113a are formed on the first reflective layer 112b and the second reflective layer 1131, respectively. The second electrode U3a is along the side of the epitaxial structure and The second electrical contact layer 丨〇6 is electrically connected, that is, the light-emitting diode 2 of the first embodiment is completed. Fig. 7 is a side view showing the structure of a flip-chip type light emitting diode according to a second embodiment of the present invention. Referring to FIG. 6 , a second electrical contact layer 106 ′ is formed on the epitaxial structure 1 ′, and the material thereof may be Indium Tin Oxide, Indium Oxide, Tin Oxide, or the like. Cadmium Tin Oxide'. Zinc Oxide [Magnesium Oxide or Titanium Nitride]. An insulating layer and a bonding layer (not shown) are formed on a permanent substrate. The material of the permanent substrate may be a translucent material such as sapphire, stellite, glass, quartz or aluminum nitride (A1N). The insulating layer is composed of a single layer or a plurality of layers of insulating material, which may be alumina (Α10χ), yttrium oxide (si〇x), tantalum nitride (SiNx), diamond-like film, tantalum carbide (SjC) or nitrogen. Ain or the like has a thickness of about 1 to 30 μm. The material of the bonding layer may be composed of, for example, a spontaneous conductive polymer or a dopant such as aluminum, gold, platinum, zinc, silver, nickel, ruthenium, indium, tin, titanium, lead, copper, palladium or an alloy thereof. Conductive material. If the light-transmitting permanent substrate is composed of an insulating material, the insulating layer can be omitted. As shown in the seventh figure, the completed epitaxial structure is bonded to the unit composed of the transparent permanent substrate 110, the insulating layer 109, and the bonding layer 108, and the grown substrate is removed, and the first electrode of the epitaxial structure is exposed. The surface of the semiconductor layer 1〇3. A first electrical contact layer 102 is then formed on the first electrically conductive semiconductor layer 103. The peripheral region of the light emitting diode is etched from the first electrical contact layer 102, the first electrical semiconductor layer 1 〇 3, the active layer 1 〇 4, and the second electrical semiconductor layer 105 from top to bottom to expose the second electrical property. The upper surface of the contact layer 1 ' 6 'in this embodiment, the upper surface and/or the lower surface of the first electrical contact layer 1 〇 2 may also be etched into a rough surface. After forming a first reflective layer 112b and a second reflective layer ii3b on the first electrical contact layer 丨〇2, the first electrical contact layer 1〇2 is not covered by the first reflective layer. The area covered by the second reflective layer. A first electrode 112a and a second electrode 113a are formed on the first reflective layer 112b and the second reflective layer 113b, respectively. The flip-chip LED 300 of the present embodiment is completed by electrically connecting the second electrode Π 3a along the side of the epitaxial structure and the second electrical contact layer ’6. 1360892
其中第一反射層112b及第二反射層113b材料可為金 屬材料，如鋁、金、鉑、鋅、銀、鎳、鍺、銦、錫、及其 合金。或金屬和氧化物組合而成，如氧化銦錫/銀（ITO/Ag)、 氧化銦錫/氧化鋁/銀（ITO/AlOx/Ag)、氧化銦錫/氧化鈦/氧化 矽（ITO/TiOx/SiOx)、氧化鈦/氧化矽/鋁（TiOx/SiOx/Al)、氧 化銦释/氮化石夕/铭（ITO/SiNx/Al)、氧化銦錫/氮化石夕/銀 (ITO/SiNx/Ag)、氧化姻錫/氮化石夕/氧化铭/ (ITO/SiNx/A1203/Al) '或氧化銦錫/氮化矽/氧化鋁/銀 (ITO/SiNx/A1203/Ag)。 其中第一電極112、112a的材料可為：In、A卜Ti、 Au、W、InSn、TiN、WSi、Ptln2、Nd/A卜 Ni/Si、Pd/A卜 Ta/Al、Ti/Ag、Ta/Ag、Ti/A卜 Ti/Au、Ti/TiN、Zr/ZrN ' Au/Ge/Ni、Cr/Ni/Au、Cr/Au、Cr/Au/Ti、Ni/Cr/Au、Ti/Pd/Au、 Ti/Pt/Au、Ti/Al/Ni/Au、Au/Si/Ti/Au/Si、Au/Ni/Ti/Si/Ti 或 其合金材料。而第二電極113、113a的材料可為：Ni/Au、 NiO/Au、Pd/Ag/Au/Ti/Au、Pt/Ru、Ti/Pt/Au、Cr/Au、 Cr/Au/Ti、Pd/Ni、Ni/Pd/Au、Pt/Ni/Au、Ru/Au、Nb/Au、 Co/Au、Pt/Ni/Au、Ni/Pt、Niln 、Pt3ln7 或其合金材料。保 護層114的材料係選自由含矽的氧化物、氮化物及高介電 有機材料所組成之一群組。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作各種之更動與潤飾，因此本發明之保護 12 丄卿892 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 本發明的較佳實施例將於實施方式之說明文字中輔以 下列圖形做更詳細的說明： 第1圖至第4圖係繪示根據習知之發光二極體的製程 示意圖。 第5圖係繪示根據本發明之實施例一之發光二極體的 結構側視圖。 第6、7圖係繪示根據本發明之實施例二之發光二極 體的結構側視圖。 【主要元件符號說明】 ⑺：磊晶結構 1〇〇、200、300 :發光二極體 1〇1 :成長基板 102 :第一電性接觸層 103 :第一電性半導體層 104 :活性層 105 :第二電性半導體層 106 :第二電性接觸層 13 1360892 107 :反射層 108 :接合層 109 :絕緣層 110 :永久基板 112、 112a :第一電極 112b :第一反射層 113、 113a :第二電極 113b :第二反射層 114 :保護層 116 :隔絕道 A :磊晶結構第一區域 B :磊晶結構第二區域 a、b :發光二極體側邊平台 14The material of the first reflective layer 112b and the second reflective layer 113b may be a metal material such as aluminum, gold, platinum, zinc, silver, nickel, ruthenium, indium, tin, and alloys thereof. Or a combination of metal and oxide, such as indium tin oxide/silver (ITO/Ag), indium tin oxide/alumina/silver (ITO/AlOx/Ag), indium tin oxide/titanium oxide/yttria (ITO/TiOx) /SiOx), Titanium Oxide / Cerium Oxide / Aluminum (TiOx / SiOx / Al), Indium Oxide Release / Nitride Xi / Ming (ITO / SiNx / Al), Indium Tin Oxide / Nitride Xi / Silver (ITO / SiNx / Ag), oxidized sulphur tin/nitridite eve/oxidized ing/(ITO/SiNx/A1203/Al) 'or indium tin oxide/tantalum nitride/alumina/silver (ITO/SiNx/A1203/Ag). The material of the first electrodes 112, 112a may be: In, A, Ti, Au, W, InSn, TiN, WSi, Ptln2, Nd/A, Ni/Si, Pd/A, Ta/Al, Ti/Ag, Ta/Ag, Ti/A, Ti/Au, Ti/TiN, Zr/ZrN ' Au/Ge/Ni, Cr/Ni/Au, Cr/Au, Cr/Au/Ti, Ni/Cr/Au, Ti/ Pd/Au, Ti/Pt/Au, Ti/Al/Ni/Au, Au/Si/Ti/Au/Si, Au/Ni/Ti/Si/Ti or alloy materials thereof. The material of the second electrodes 113, 113a may be: Ni/Au, NiO/Au, Pd/Ag/Au/Ti/Au, Pt/Ru, Ti/Pt/Au, Cr/Au, Cr/Au/Ti, Pd/Ni, Ni/Pd/Au, Pt/Ni/Au, Ru/Au, Nb/Au, Co/Au, Pt/Ni/Au, Ni/Pt, Niln, Pt3ln7 or alloy materials thereof. The material of the protective layer 114 is selected from the group consisting of cerium-containing oxides, nitrides, and high dielectric organic materials. While the present invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The protection of 12 丄 892 Scope is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Preferred embodiments of the present invention will be described in more detail with reference to the following figures in the description of the embodiments: FIGS. 1 to 4 are diagrams showing the process of a light-emitting diode according to the prior art. schematic diagram. Fig. 5 is a side view showing the structure of a light-emitting diode according to a first embodiment of the present invention. Fig. 6 and Fig. 7 are side views showing the structure of a light-emitting diode according to a second embodiment of the present invention. [Description of main component symbols] (7): epitaxial structure 1〇〇, 200, 300: light-emitting diode 1〇1: growth substrate 102: first electrical contact layer 103: first electrical semiconductor layer 104: active layer 105 : second electrical semiconductor layer 106 : second electrical contact layer 13 1360892 107 : reflective layer 108 : bonding layer 109 : insulating layer 110 : permanent substrate 112 , 112a : first electrode 112b : first reflective layer 113 , 113a : Second electrode 113b: second reflective layer 114: protective layer 116: isolated track A: epitaxial structure first region B: epitaxial structure second region a, b: light-emitting diode side platform 14