TWI352685B - Mems device and method of making the same - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a microelectromechanical system (MEMS) device and a method of fabricating the same, and more particularly to a MEMS device having a lateral vent and a method of fabricating the same. [Prior Art] • A MEMS device includes a microelectromechanical substrate integrated with a microelectronic circuit (such a device can form, for example, a microsensor (microrulator) or a microactuator ^ ^ f ^#^ ( Electrostrictive > Thermoelectric, piezoelectric, piezoresistive, etc. The hall device can be fabricated on an insulating layer or other substrate by microelectronics such as lithography, vapor deposition, and side. Recently, there have been 'the same type of manufacturing steps (such as deposition of material layers and selective removal of material layers) using analogous analogy and digital CM〇s (complementary MOS) circuits. 'Using a micro-metal mesh sealing process to make micro-microphones and micro-sounds. The metal mesh of the back-sealing acts like a moving piece of a variable capacitor, so it can be used as a micro-gear, micro-speaker. To make a sealed metal mesh The operation is a micro-microphone and a micro-speaker. 'The sealed metal and net must be able to push the air to make sound waves; like a large microphone and a loud sound H, there must be a county component to push the gas to create sound waves. In the case of the micro-sound H and the micro-microphone, if there is no vent hole or other opening in the empty space below the metal mesh of (4), the sealed metal mesh will be unable to reach the 13-52685 The air inside cannot move inward, and it cannot move outward because of the vacuum state. Therefore, it is necessary to have a vent hole. The five-knowledge technique is to etch the teeth from the back (four) substrate (4) ic〇n substrate when manufacturing the vent hole. . For example, U.S. Patent No. 6,936,524 discloses a method of making a MEMS device, including a number of steps as shown in the drawings and the second embodiment. The first ugly, after forming the mesh (hall h) through the sllicon rdease process, the directional opening (pil〇t 〇Penings) is enlarged to form a vent hole. A first dielectric layer 14 , a first metal layer 16 , a second dielectric layer 20 , a second metal layer 22 , a third dielectric layer 26 , and a third metal are stacked on the upper surface of the germanium substrate 12 . A layer 28, a top dielectric layer 32, and a photoresist layer 38. The first metal layer 16 is patterned such that a portion forms the structure of the micrometal mesh 18. The second and third metal layers 22 and 28 each form an opening above the micrometal mesh 18 to expose the micrometal mesh 18. The photoresist layer 38 conceals over the second metal layer 28 to protect portions that are not desired. The lower surface of the Shihki _ plate 12 is bonded to a first carrier wafer 36 via an adhesive 34. Thus, after a deep reactive-ion etching (DRIE) process is performed from the upper surface of the Shih-hs substrate 12, a reactive-ion etching (RIE) process and inductively coupled plasma reactivity are performed. An inductively coupled p丨asma reactive ion etching (ICP RIE) process, or a XeF2 etching process 24, partially etches the germanium substrate 12 to release the micrometal mesh 18 and form a vent 40. FIG. 2 shows another embodiment, after the upper surface of the germanium substrate 12 is protected by the protective layer 45 and bonded to a first carrier wafer 44 via an adhesive 42 , a photoresist is passed from the lower surface of the dream substrate 12 . Mask 丄UZ08:) 4曰6 RIE or DRIE process 48 is performed on the stone substrate η to form a vent hole 4〇. However, in the case of 疋石夕, the thickness of the plate is about micrometers, and even if it is repeatedly ground by the manufacturing process, y still has a thickness larger than _micron. Touching this thickness, whether from the front or the back, is a time consuming process. Therefore, a novel brushing structure and its manufacturing method should be required to facilitate the manufacture of such devices. Eight [Summary of the Invention] One of the objects of the present invention is to provide a novel VIEMS device and a method of manufacturing the same to facilitate the manufacture of such devices. In the aspect of the invention, the fine milk device of the present invention comprises a substrate; EMS ', , 5' is placed on the substrate; and a venting structure is disposed on the substrate

The broadcast structure is located on the same side of the substrate, and the ventilating structure and the pendulum MS junction 冓IW-first-slide stop structure are adjacent to each other. The 赃_ structure includes at least an electrode slanted on the substrate t or the wire; and a micro metal mesh disposed on the substrate to form a "first" empty space between the metal mesh and the substrate. The venting structure comprises a metal layer disposed above the substrate, and the galvanic and silk _ via (4)-side stop structure two sides =: pass and reduce the vent hole, and penetrate the metal layer to communicate with the second empty chamber. In another aspect of the invention 8 1^52685 board MEMS, ., . The structure is disposed on the substrate, and the - aeration structure is disposed on the earth plate. The MEMS structure is located on the same side of the substrate. The ventilation structure and the suspension structure are adjacent to each other through the Hna stop. The MEMS structure includes the V electrode. π is placed in the substrate or on the substrate; and the micro metal mesh is disposed on the substrate above the micro-i network and the substrate forms an empty chamber. The ventilation structure includes to (the air hole ® _ stop structure or the second side stop structure) The surrounding milk hole is connected to the empty chamber via the first (four) stop structure and the second silver cut stop structure.

In still another aspect of the invention, the method of manufacturing a naval device of the present invention comprises the following steps. A substrate is provided which includes a MEMS region and a vent region adjacent to the MEMS region, and a substrate is disposed in or on the substrate of the hall Ms region. A plurality of interlayer dielectric layers are formed on the substrate. A micro-metal mesh is formed in the inter-layer dielectric layer of the plurality of interlayer dielectric layers, and the micro-metal mesh is not located between the underlying interlayer dielectric and the top interlayer dielectric layer. A metal hard mask is formed in the interlayer dielectric corresponding to the upper portion of the micro metal mesh. Forming a plurality of metal layers and a plurality of channel plugs alternately in a plurality of interlayer dielectric layers between the vent area and the hall area in the lower layer to the top layer interlayer dielectric layer to form a The first-last stop structure 'but the bottom of the first-last stop structure is higher than the bottom interlayer dielectric layer and τ is not higher than the micro metal mesh. In the vent area, a plurality of interlayer dielectric layers - the lower layer is up to - the higher species are alternately stacked in a plurality of metal layers and a plurality of channels are inserted to form an H-cut stop structure, but the second The bottom of the stop structure is high Wei 9 13-52685 interlayer dielectric layer 'the second (10) stop structure is grid-like. Performing a release process to remove a plurality of interlayer dielectric layers of the MEMS region and the vent region. The MEMS region forms a hollow micro-metal mesh, the first and second etch stop structures in the vent region At least one vent is formed in the middle, and the underside of the first and first etch stop structures is etched. A vibrating membrane is applied to the micro metal mesh. Compared with the prior art, the MEMS device of the present invention has a lateral vent hole, and the venting structure and the MEMS structure are disposed on the same side of the substrate, and the vent hole release process and the MEMS structure metal mesh can be manufactured at the time of manufacture. The release process is performed simultaneously from the same side of the substrate, and the etching of the dielectric layer (e.g., hafnium oxide) is performed. Therefore, the etching time required for the etching process is shorter than that of the germanium, and the manufacturing is convenient. And it is easy to integrate with the logic structure of MOS and other processes. [Embodiment] The present invention will be described below by way of specific examples. Figures 3 and 4 show a specific embodiment of a MEMS device in accordance with the present invention. Figure 3 shows a schematic top view thereof. As shown in FIG. 3, MEMS device 50 can include a MEMS region 102 and a vent region 1〇4, and can further include a logic region 106. The MEMS region 102 is provided with a MEMS structure 52, such as a micro-microphone device or a micro-speaker device or the like. The vent area 1〇4 is provided with a venting structure 54' which includes, for example, a venting opening 74 formed through a plurality of patterned metal layers (shown as a fifth metal layer M-5) and a channel plug (shown For the fifth 10 13-52685

An ankle ring, which can be placed around the MEMS area, to release the structure outside the MEMS area in the release system, such a structure is disclosed in US Patent Application No. 6,286 (the same applicant as in this case) The same inventors have a clear description in the specification, which is hereby incorporated by reference in its entirety.曰 帛 4 shows a schematic view of the section along the line AA of the secret device in Figure 3. As shown in FIG. 4, the MEMS device 5 of the present invention includes a substrate material, a MEMS region 〇2 on which the MEMS structure 52 is disposed on the substrate 64, and -L gas ', σ structure 54 a The vent area on the substrate 64 is located on the same side of the substrate 64 as the MEMS junction 52. The venting structure 54 and the MEMS structure 52 are in close proximity to one another via an etch stop structure. The MEMS structure 52 includes at least one electrode structure 68 and a micro-metal mesh 70. The electrode structure 68 is disposed on the substrate 64. In other embodiments, it may also be disposed in the substrate. The micro metal mesh 7 is placed over the substrate 64 at a distance from the substrate 64. An empty empty chamber 72 is formed between the micro metal mesh 7 and the substrate 64. The micro-metal mesh 7 can be coated with a vibrating membrane 78. The venting structure 54 includes at least one venting aperture 74 that is surrounded by an etch stop structure 66 or an etch stop structure. The vents 74 may have a plurality of vents and may be arranged in an array. The bottom of the etch stop structure 66 and the bottom of the etch stop structure 76 have a distance from the base 1352685 plate 64. When the vent hole 74 and the empty chamber 72 vibrate the film 78, the space of the empty chamber 72 can be squeezed. Discharge to the vent 74. A squeezing of the air can be laterally noted that the etch stop shown in Figure 4 has several metal layers (for example, the first metal skin M), the second full genus, and 76 each including a stratified layer -3, and a fourth a fifth metal and a plurality of channel plugs (for example, the first channel plug v_Bu giant ^), the second channel plug V-3, the fourth channel plug V soil V2 β Le five channel plug Plugs V-5) Mutual: =;: The bottoms of the crucible structures 66 and 76 are not higher than the micro_H and the bottom of the pavilion structure 66 is not connected to the substrate 64'. For example, in Fig. 4, the engraving stops 66 and 76 are omitted. It is not made by the so-called contact plug to make contact with the substrate, but is made by the first metal latent process. In this manner, after the interlayer dielectric layer is released, the empty chamber 72 communicates with the vent holes % 叮 through the etch stop structures 66 and 76. The etch-off etch stop structure surrounds the entire MEMS structure 52 and the periphery of the venting structure 54 as a function of the guard ring to prevent damage to the structural surface of the MS structure 52 and the (4) (9), for example, side stop, U 冓82 and 8G, which are arranged from the inter-layer dielectric layer barrier, and then alternately stack 4 metal layers and channel plugs. Μ_ & 1 5G may further include a logic structure disposed on the substrate 64 at a logic region H)6' of 12^52685 and a MEMS structure 52 on the substrate vent structure 54 and the MEMS structure 52. The stop structure 80 is adjacent. Figures 5 and 6 show that the real thing of the configuration is that the money is stopped on the side of the dirty S-junction, or the structure 54 is not limited.

Formed by the area. The logic structure 62 may be adjacent to the venting structure 54; the MEMS_MS structure 52 may be adjacent to the MEMS _MS structure 52, or may be associated with the fine structure %. Metal (four) line. • Structured layers, plugs, and interlayer dielectric layers. T. Included in the metal, the _stop structure 66 is configured such that the bottom material is higher than both the micro-metal mesh 70 and the venting holes 74, and is not connected to the substrate & For details, if the micro metal mesh 7 is made of the third metal layer, the _^ ς 66 can be made of the first layer of gold _ Μ heart second layer metal layer ' or the third metal layer M-3 Start manufacturing. Therefore, the vent hole 74 may be disposed on the third metal layer 曰m_3, φ the fourth metal layer M_4, the fifth metal layer M_5, or the top metal layer M_Top. The position of the vent hole 74 is set in a metal layer not lower than the micro metal mesh 7 不 and not lower than the bottom portion of the etch stop structure 66. Thus, it is possible to form the two places surrounded by the etching stop structure 66 and the etch stop structure 76, or the etch stop structure 76 and the etch stop structure 80. For example, Figure 4 shows that the vent % is disposed on the top metal layer Μ-Top, and is etched by the top metal layer M-T0p, the metal layers My to M-5, and the channel plugs ν-丨 to v_5. The structure % is stopped to form an opening. Figure 7 shows another embodiment. In the device 55, 13 vent holes 74 曰 < m fourth metal metal layer M_4, and by the third metal layer, 'formed open private plug V-3 to form a stop structure %, and 8 Fig. 1 = (4) Hole (4) Following her, the example of the ventilating structure 84 of the MEMS device 85 can be referred to in the figure. Passing the second 〇 == (10) 顺 询 再 ’ ’ ’ venting structure of the venting hole is not specifically limited to the S device 9. Schematic cross-sectional view, the ventilation structure of the second side of the side of the button 86, _ - gold touch. _ Job hole 86 = one Ι ^ α Γ vent hole 86 has no further step _ stop structure. And /, the soil plate 64 has a certain distance to form an empty empty chamber 92, and the 66 J 72 is used to manufacture the device (4) device of the present invention, and the coffee ventilation structure and the logical structure can be separately prepared, but the health half The guide _ metal interconnect process 'made from the corresponding same-metal layer together, more convenient and economical 】] to _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ As shown in FIG. u, a substrate 64, such as a semiconductor substrate, 1352685, which may in turn be, for example, a germanium substrate, is provided. The substrate 64 includes a MEMS region 1200, and a vent region 104 is adjacent to the MEMS region 〇2, and may further include a logic region 106. An electrode structure 68 is provided on the substrate of the MEMS region 1 2, which is composed of a via 69 and a gate dielectric layer 71 between the gate 69 and the substrate 64. Next, as shown in FIG. 12, a metal interconnect process is performed, that is, a first interlayer dielectric layer (5) is formed on the substrate 64, on the first interlayer dielectric layer ILD-1. Forming a patterned first metal layer μ", which constitutes an etch stop structure, forms a second interlayer dielectric layer ILD_2 on the first metal layer Μ-1, and a first interlayer dielectric layer ILD- 2 towel-shaped money, a plurality of channel-shaped dielectric holes, and filled with plug material to form a first-channel plug V] 'bottom contact-metal layer M_b interlayer dielectric layer material may be, for example, oxidized stone eve, available For example, it is made by a conventional deposition system. The metal layer can be produced by a copper process or a g process, or a mosaic or double-click process. The second metal layer M_2 is formed in the same manner and laminated on the first channel plug V], and the third interlayer dielectric layer ILD_3 and the second channel plug V-2 are sequentially formed. Next, a patterned third metal layer M_3 is formed. The third metal layer (6) further includes a pattern of a miniature metal mesh in the MEMS region 102. Forming the fourth dielectric layer ILD_4 in the same manner, the third channel end 3 is only located on the third metal layer M-3 of the etch stop structure, and the patterned fourth metal layer is stacked on the third channel. Insert the final 3, the fifth interlayer dielectric layer, the fourth channel insert V-4. Then, a patterned fifth metal layer M_5 is formed, which further includes a portion of the metal hard mask 77 for the touch, located on the upper 15 corresponding to the micro metal mesh 70 = then forming a sixth interlayer dielectric layer ILD_6, In the sixth interlayer dielectric layer ILD6 / formation: a plurality of fifth channel shape _ v_5, the bottom contact the metal Μ. Then forming a patterned top metal layer Μ-Top on the first interlayer dielectric layer ILD_6 to contact the fifth channel plug v_5. The side stop structure between the MEMS structure and the vent structure The bottom of the substrate must have at least a certain distance from the substrate, but it is not necessarily required to be opened from the upper surface of the first interlayer dielectric layer, so that the bottom of the structure is not higher than the micro metal. The mesh is not higher than the vent hole. The above process can be pasteed at the same time to manufacture the M〇s element or the metal=wire structure of the logic region 1〇6. Therefore, the thickness of the metal layer and the dielectric layer in the present invention. The metal layer and the interlayer dielectric layer of the dielectric layer structure of the same layer are the same or similar. In addition, it should be noted that when manufacturing a rice-stop structure surrounding the MEMS region and the vent region, a channel-shaped contact plug should be fabricated from the inter-layer dielectric layer, and then a continuous stack is fabricated. The metal layer is formed with a channel plug to form a complete etch stop structure for protection. Next, please refer to Section 13 for a release process. First, the fine (10) region 1〇2 and the vent area 1〇4 are subjected to an anisotropic deep-reaction ion remnant oxidized Wei side process, respectively, with a metal hard mask of the fifth metal layer M_5, and a top layer. The metal layer m_Tgp is made of material, and the respective substrates (4) are placed at the moment, and the substrate 64 is stopped, and the opening 79 and the opening 81 are side-out. Then, the entry is made: J Metal 16 1352685 Except the residual metal hard cover 77. Next, please refer to Μ 列 列 r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r r The % _ dielectric $ will not be thinned. Thus, the MEMS _ _ has a distance from the substrate 64, and becomes **, the money _ field (10) forms the vent 74, and the empty chamber 72 is finally 'in the micro metal mesh 7 〇上上赤絪70 is as follows 曰Μ14 into the moving film 78 to cover the micro-metal 胜 win can be paid to the Mems %% according to the present invention, as shown in the figure *. When the diaphragm is made of bismuth material, It can be (4)w 兀7 in the patterned metal layer of the Μ-type metal mesh, after the opening of the axis, the domain of the axis is released in _, the material is the relationship, It is not removed by the button of the oxidized stone material. Fig. 15 and Fig. 6 are diagrams of the method according to the present invention. In the case where the vent hole is the mesh vent 86, Yes: the pores are on the MEMS structure & and the aeration structure 54. Since t=%, even if it has not yet solidified, the membrane material will not fall: the secret opening is π. Then, please refer to the 16th figure to the profitable The photoresist layer 93, the exposed aeration structure 5 gas = the upper formation - the pattern is laid (4). The second stripping is replaced by: 1352685 The above description is only a preferred embodiment of the present invention, and the patent application according to the present invention. Equivalent changes and modifications made by the surrounding are within the scope of the present invention.

Figures 1 and 2 show schematic diagrams of two embodiments of a conventional method of fabricating a MEMS device metal mesh. Figure 3 is a schematic top plan view of one embodiment of a MEMS device in accordance with the present invention. Figure 4 is a schematic cross-sectional view of the MEMS device of Figure 3 taken along line AA. Figures 5 and 6 show schematic views of two embodiments of the MEMS structure, the venting structure, and the configuration of the logic structure, respectively, in accordance with the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 7 is a top plan view showing another embodiment of a MEMS device in accordance with the present invention, showing another embodiment of an iMEMS device in accordance with the present invention. Fig. 9 is a cross-sectional view showing the MEMS device of Fig. 8 along a line BB'. Fig. 1 is a schematic cross-sectional view showing still another embodiment of the MEMS device according to the present invention. 11 through 14 are schematic views of a specific embodiment of a method of fabricating a MEMS device in accordance with the present invention. 15 and 16 are schematic views of another embodiment of a method of fabricating a MEMS device in accordance with the present invention.

[Main component symbol description] 12 Shixi substrate 14 First dielectric layer 16 First metal layer 18 Micro metal mesh 20 Second dielectric layer 22 Second metal layer 24 Process 26 Third dielectric layer 28 Third metal layer 32 Top dielectric layer 34 Adhesive 36 Carrier wafer 38 Photoresist layer 40 Vent 42 Adhesive 44 Carrier wafer 45 Protective layer 46 Photomask 48 Process 50 MEMS device 52 MEMS structure 54 Vent structure 55 MEMS device 62 Logical structure 64 Substrate 66 1 Insect stop structure 68 Electrode structure 69 Gate 70 Miniature metal mesh 71 Gate dielectric layer 72 Empty chamber 74 Vent hole 76 Insect stop structure 77 Metal hard mask 78 Vibrating membrane 79 Opening 19 1352685

80 1 insect stop structure 82 rice stop structure 85 MEMS device 88 ventilation structure 92 empty chamber 102 MEMS region 106 logic region M-2 second metal layer M-4 fourth metal layer M-Top top metal layer V-2 Two-channel plug V-4 Fourth channel plug ILD-1 First interlayer dielectric layer ILD-3 Third interlayer dielectric layer ILD-5 Fifth interlayer dielectric layer 81 Opening 84 Ventilation structure 86 Mesh Vent hole 90 MEMS device 93 photoresist layer 104 vent area M-1 first metal layer M-3 third metal layer M-5 fifth metal layer V-1 first channel plug V3 third channel plug V-5 fifth channel plug ILD-2 second interlayer dielectric layer ILD-4 fourth interlayer dielectric layer ILD-6 sixth interlayer dielectric layer 20

Claims (1)

X. Patent application scope: h—a micro-electromechanical system (MEMS) device, comprising: a substrate; a MEMS structure disposed on the substrate, the structure of the structure comprising: at least—the electrode is disposed in the substrate or a micro-metal mesh is disposed on the substrate, and a first empty space is formed between the micro-metal mesh and the substrate; and a gas structure is disposed on the substrate, and is located on the substrate On the same side of the substrate, the venting structure and the MEMS structure are stopped adjacent to each other by a first surname. The venting structure comprises: a genus layer disposed above the substrate, the metal layer and the substrate Forming a second to between, and the second empty chamber is in communication with the first empty chamber via the lower side of the first etch stop structure, and a plurality of vent holes (venting through the metal layer and the second space The MEMS device of the patent (4)*1, wherein the vents are arranged in an array. 3. The MEMS device of claim 1 of the patent scope, wherein the MEMS structure is a miniature metal mesh Coating-vibration 4. The MEMS device of claim 1, wherein the first-touch stop 21-frame comprises a plurality of surface layers and a plurality of drain plugs, and the first moment The bottom of the 彳τ stop structure is not higher than the micro metal mesh and the vent hole, and is not connected to the 4 substrate, so that the m is connected to the second vacant chamber. 5·If Shen Qing patent scope item 1 The MEMS device further includes a second etch stop structure surrounding the MEMS structure and the vent structure. 6. The MEMS device of claim 1, further comprising a logic structure disposed on the substrate 'located with the MEMS structure On the same side of the substrate, at least one of the venting structure and the MEMS structure is adjacent to the logic structure via a third etch stop structure, the logic structure includes a metal interconnect structure, and the metal interconnect structure A plurality of metal layers, a plurality of plugs, and a plurality of interlayer dielectric layers. 7. The MEMS device of claim 6, wherein the micro-variable metal mesh of the MEMS structure and the metal interconnection of the logic structure One of the gold structures The layer is made of the same metal layer. 8. The MEMS device of claim 7, wherein the microstructured metal mesh of the MEMS structure and the third metal layer of the metal interconnect structure of the logic structure are the same A metal layer is produced. 9. The MEMS device of claim 6 wherein the venting structure is gold 22 13-52685 The metal layer is formed by the metal layer of the metal layer interconnection structure of the logic layer and the logic structure. The MEMS device of claim 9, wherein the metal layer of the venting structure and the uppermost metal layer-metal layer of the metal interconnect structure of the logic structure are fabricated. 9 ° • : 1. The MEMS device of claim 6 wherein the venting structure is located between the MEMS structure and the logic structure. 12. The MEMS device of claim 6 wherein the venting structure and the logic structure are each adjacent to the MEMS structure. A microelectromechanical system (MEMS) device comprising: a substrate; a MEMS structure disposed on the substrate, the MEMS structure comprising: at least one electrode disposed in or on the substrate, and a micro-metal mesh is disposed above the substrate, and a micro-chamber is formed between the micro-metal mesh and the substrate; and a ventilation structure is disposed on the substrate, and the MEMS structure is located on the same surface of the substrate, and the ventilation structure is The MEMS structure is adjacent to each other via a first etch stop structure. The vent structure includes at least one vent hole surrounded by the first etch stop structure or a second etch stop structure, wherein the at least one vent hole passes through 23丄妁 2685 is connected by the first etch stop structure and the second etch stop. The MEMS device of the MEMS device of claim 13 is included in the lower portion of the structure. The at least one venting hole includes a plurality of vent holes arranged in a _. It is called the application of the patent (4), and the ventilation structure is a multi-metal mesh. Wherein the MEMS structure 16. The MEMS device of claim 13 of the patent application, the micro metal mesh is coated with a diaphragm. 7. The MEMS device of claim 13, wherein the first and last stops, the structure comprises a plurality of metal layers and a plurality of contact plugs alternately stacked, and the The bottom of the first-stop structure is higher than the fiber mesh and the at least one vent, and is not connected to the substrate, so that the empty chamber is connected to the at least vent. 18. The device of claim 13 further comprising a third etch stop structure surrounding the MEMS structure and the venting structure. 19. The MEMS device of claim 13 further comprising a logic structure disposed on the wire plate, having no fineness _ located on the same side of the county plate, at least one of the venting structure and the MEMS structure The logic structure is adjacent to the second etch stop structure via the 24 1352685, the logic structure includes a metal interconnect structure, the base metal interconnect structure includes a plurality of metal layers, a plurality of plugs, and a plurality of interlayer dielectric layers . 2. The MEMS concentrating of claim 19, wherein one of the metal layers of the MEMS structure and the metal interconnect structure of the logic structure is made of the same metal layer. 21. The MEMS device of claim 20, wherein the micrometal mesh of the MEMS structure and the third metal layer of the metal interconnect structure of the logic structure are made of the same metal layer. The MEMS device of claim 19, wherein the first money stopping structure comprises a plurality of metal layers and a plurality of channel plugs alternately stacked, and the bottom of the first etch stop structure is not high And the at least one vent hole is connected to the micro metal mesh and the at least oxygen venting hole, and the at least one vent hole is connected to the at least one vent hole, and at least one of the money layer and the channel plug of the service stop structure It is the same as the metal of the logic structure called _ _ gold system and at least - the same layer. 23. The MEMS device of claim 19, wherein the § hai vent structure is between the MEMS structure and the logic structure. 25 1352685 From. The MEMS device of claim 19, wherein the venting structure and the 忒 logic structure are each adjacent to the MEMS structure. A method of fabricating a microelectromechanical system (MEMS) device, comprising: providing a substrate comprising a MEMS region, and - a vent (four) ring region adjacent to the MEMS region, in or on the substrate of the MEMS region An electrode is disposed on the substrate; a plurality of interlayer dielectric layers are formed on the substrate; and a micro metal mesh is formed in an interlayer dielectric layer of the interlayer dielectric layer, corresponding to the upper surface of the electrode of the MEMS region, the micro metal The mesh is not located on the bottom layer and the top layer of the interlayer dielectric layer; a metal hard mask is formed in an interlayer dielectric layer corresponding to the upper layer of the micro-metal mesh; between the vent region and the MEMS region One of the interlayer dielectric layers alternately stacks a plurality of metal layers and a plurality of channel plugs in a top layer of the lower layer to the top layer of the interlayer dielectric layers to form a first memory stop structure. The bottom of the first smear stop structure is higher than the bottom layer of the interlayer dielectric layer and not higher than the micro metal mesh; upward in the lower layer of the interlayer dielectric layer of the vent region Interlayer Stacking a plurality of metal layers and a plurality of channel plugs in a higher layer of the layer to form a second etch stop structure, such that the bottom of the second residual stop structure is higher than the bottom layer of the interlayer dielectric layer The second | insect stop structure is a grid shape; performing a release process 'to remove the 26 1352685 interlayer dielectric layer of the MEMS region and the vent region, so as to form a hollow in the MEMS region Forming at least one vent hole in the mesh shape of the first and second etch stop structures in the vent region, and etching the underside of the first and second etch stop structures; A micro metal mesh is coated with a vibrating crucible. The method of claim 25, wherein the at least one vent of the venting structure is further a mesh vent. The method of claim 26, wherein the step of applying a vibrating membrane to the micro-metal mesh forms the vibrating crucible on the micro-metal mesh and the ventilating vent, and then inspecting the venting hole of the crucible The diaphragm is removed. 28. If the second application of the patent application is carried out, the transfer process is combined to form the at least vent hole and the micro metal mesh. 29. The method of claim 25, wherein the further stop structure is synchronized to the purely uniform-logic structure step comprising: contacting the first etch in the vent region c.