1351711 九、發明說明： 【發明所屬之技術領域】 ^發明係有關於-種脈衝式高”量子Μ紐 ，：備方法’尤指一種利用一脈衝式高壓源 ^件申奈米碳管切奈米線，產生_脈衝式場效;子 源，可激發一石夕量子點營《薄膜内部之 獲得脈衝式可見光源，進而形成-具節能功能：二 型矽螢光燈。 犯之十板 【先前技#ί】 —現今，含有汞之螢光燈普遍被❹於照明。這種 水瘵軋燈利用汞蒸氣放電產生紫外光輻射後可 分別為紅（Red，R)、綠（Green，G)及藍⑶心） 之三種螢光材料’並由該紅、綠及藍之螢光材料發光 以=白色螢錢。然而，使用於這些螢光燈内之采 對環境有害，因此並不適合目前提倡環保之時代。 又目耵市場上白光光源，除了傳統上之愛迪生燈 泡與螢光燈外’還有近年來廣泛使用之發光二極體 (Light Emitting Di〇de，LED)。而其中白光發光二極 體（White-UghtLED)之發光模式，主要有下列三種 模式： (A)红+綠+藍三種發光二極體之混色：該模式 雖然發光效率高，然而，其構造不僅將因為電極、金 屬引線及打線程序次數過多，而形成製作成本較高及 1351711 體積較大之缺點，且因為打線程序也容易造成引線脫 落及晶粒破損等影響生產良率之憾事發生； (B)藍光發光二極體（Blue-Light LED) +黃色 螢光粉體：該模式雖然具有成本低及體積小，然而， 此種製程方法同樣需要具有較多次數之電極、金屬引 線及打線程序，因此對元件之製作良率同樣將造成不 良影響；以及 (C)紫外光發光二極體（uv LED) +白色螢光 粉體；雖具有製作簡易及成本低，然而其所產生之光 源係為一波#又不連績光譜，在照射紅色物體時會呈現 微弱撥色之偏光現象，因而光源演色性較差。另外， 在產品使用後光度衰減情形嚴重’螢光物體在惡劣環 境下容易產生質變況狀，致使元件使用壽命較短及產 品產生偏色現象。 丄厂/ 逆 .、 …狀叫/生土《尤之螢光燈將對環境 造成汙㈣害；❾X發光二極體作為照明系統呈現— 點光源，雖具有指向性’但直接目視光源，會 :眼與不舒適感’並且除了容易對元件產生不、良ί 其光源演色性亦不佳’而產品更易於質變。故 -般習用者係無法符合使用者於實際使用時之戶卜： 【發明内容】 而 利用一脈衝式高壓源 米線，產生—脈衝式 本發明之主要目的係在於’ 與一陰極組件中奈米碳管或矽奈 6 135:1711 . 場效電子源，可激發一矽量子點螢光薄膜内部之矽量 子點，以獲得脈衝式可見光源，進而形成一具節能= 能之平板型矽螢光燈。 為達以上之目的，本發明係一種脈衝式高壓矽量 子點螢光燈之製備方法，先選擇一第一基板，利用一 電子搶蒸鍍（E-gun Evaporation )系統或一賤射 (Sputtenng)彡統，在該第一基板上先後被覆一欽金 ㈣獏之緩衝層及一鎳、鋁或白金金屬薄膜之催化 f。接著利用一化學氣相薄膜沉積法（Chemical Vap〇r ^〇SltlGn，CVD)製程，在該錢層上生成-奈米碳 矽奈未線，藉此以組成一激發源 :::組件:另選擇-為透明之第二基板，利= ==膜沉積法:於該第二基板上合成-”子 同尺寸大、且'亥石夕置子點螢光薄膜中係均勻嵌有不 該發光一 之了量子點’藉此以組成一發射源’作為 ::I之陽極組件；將該陰極組 墨源產生-脈衝式尸外接之脈衝式高 提供一帝位罢「 ^子源’該脈衝式高屋源係可 衝式場:電子二ίΐ;脈=場效電場與加速該脈 薄膜内部之石夕量子#，而激發該石夕量子點螢光 【實施方式】 ..，，叫件―顯式可見光源。 請參閱『第1圖〜第e β 圖』所示’係分別為本 7 1351711 發明之製作流程示意 士政 發明之第—基板示咅圖、 =1之發源結構示意圖'本發明之第：激發 2構不思圖、本發明之第二基板示意圖、本發明之 發射源結構示意圖、本發明之第— ^ BH ^ \九疋件不意圖及 本發月之弟一發光兀件示意圖。如圖所示：本發明係 一種脈衝式高壓妙量子點螢光燈之製備方法，其至少 包括下列步驟： 〃 (A) 選擇一第一基板11 :如第2圖所示，先 選擇一第—基板2 1，其中，該第-基板2 1係可為 矽、玻璃、陶瓷或不鏽鋼中擇其一； (B) 組成一激發源；[2 :如第3A圖及第3B圖 所示，利用一電子搶蒸鍍（E-gUn Evaporation)系: 或一濺射（Sputtering)系統，在該第一基板2 1上先 後被覆一鈦金屬薄膜之緩衝層2 2及一鎳、鋁或白金 金屬薄臈之催化層2 3。接著利用一化學氣相薄獏沉 積法（Chemical Vapor Deposition, CVD)製程，以一 乙烧（Ethane，CzH6)或甲烷（Methane, CH：4)為主要 破源’在該催化層2 3上生成一奈米碳管2 4，亦咬 係以一矽甲烷（Monosilane，Si% )或一二氣矽甲燒 (Dichlorosilane，SiHzCb)為主要矽源，利用同樣势 程’在該催化層2 3上生成一矽奈米線2 5，藉此以 組成一激發源2，作為發光元件之陰極組件，其中， 該奈米碳管2 4或矽奈米線2 5係具有奈米尺寸及導 電性； 135:1711 巷板丄d :如第4圖所示 擇-為透明之第二基板31，其中，該第二基板3i 係可為玻璃、石英或藍寶石（Al2〇3)中擇其一； ()、且成發射源1 4 :如第5圖所示’利用 該化學氣相薄膜沉積法，於該第二基板“上合成一 具尚介電常數之石夕量子點螢光薄膜3 2 ’且該石夕量子 點螢光溥臈3 2中係均勻嵌有同時含1 1 10太米 尺寸大…量子點321，藉此乂成 " 作為忒發光兀件之陽極組件，其中，該 ，量子點螢光薄膜3 2係可為高分子聚合： =ΓΓ且’ 或碳化梦…_ Carblde， )4 h性或非導電性之基材⑽㈣·以及 源:如Lr:衝式高壓源激發得一脈衝式可見光 ',、端放-幻第6B圖所示’將該陰極組件中且 ===;::2:_線25, 特之電壓，分別持續脈衝。. 及間隔脈衝0.1毫秒至1G毫秒之時間，產生H、 場效電子源，而爷 生脈衝式 極組件間建立之;陰極組件與陽 加速該脈二 r發::;r/先薄膜32〜量子= 又于—脈衝式可見光源。 藉此，利用該激發源2及該脈衝式高壓源4提供 力β速之脈衝式％效電子源，而該脈衝式高屋源4係可 電位差，以產生該脈衝式場效電場與加速該脈 ::效電子源内之電子，再藉此脈衝式場效電子源 以加速電子激發該發射源3以產生該脈衝式可見光 二因二，本發明能利用較低之電能，即可獲得穩定 一脈衝式可見光源’進而使此發光元件！形成 八有即此功能之平板型矽螢光燈。 来所述’本發明係一種贩衝式高壓石夕量子點螢 激二 法’可有效改善習用之種種缺點，藉由 二發射源及脈衝式高壓源所組成之發光元件， 可大大提昇節能功能，進而使本發明 專利申請之要件，爰依法::專：請確已符合發明 ·*·不===者，僅為本發明之較佳實施例而已’ 二 故™ 化與修，，仍屬二 10 【圖式簡單說明】 第1圖’係本發明之製作流程示意圖。 第2圖’係本發明之第-基板示意圖。 f3A圖’係本發明之第-激發源結構示意圖。 第3B圖，係本發明之第二激發源結構示意圖。 第—4圖，係本發明之第二基板示意圖。 第5圖，係本發明之發射源結構示意圖。 第6A圖’係本發明之第—發光元件示意圖。 第6B圖’係本發明之第二發光元件示意圖。 【主要元件符號說明】 步驟11〜15 發光元件1 激發源2 第一基板21 緩衝層2 2 催化層2 3 奈米碳管2 4 矽奈米線2 5 發射源3 第二基板3 1 1351711 石夕量子點營光薄膜3 2 矽量子點3 2 1 脈衝式高壓源41351711 IX. Description of the invention: [Technical field to which the invention belongs] ^The invention relates to a kind of pulsed high" quantum neon,: a method of preparation, especially a method using a pulsed high-voltage source, Shennai carbon tube Chennai The rice noodle produces a _pulse field effect; the sub source can excite a Shixi quantum dot camp. The pulsed visible light source inside the film is formed, and the energy-saving function is obtained: the second type 矽 fluorescent lamp. #ί】—Currently, mercury-containing fluorescent lamps are commonly used for illumination. These water-rolled lamps can be red (R, R), green (G) and Blue (3) heart) three kinds of fluorescent materials 'and are illuminated by the red, green and blue fluorescent materials to = white money. However, the use of these fluorescent lamps is harmful to the environment, so it is not suitable for environmental protection. In the era of white light, in addition to the traditional Edison bulbs and fluorescent lamps, there are also Light Emitting Diodes (LEDs) widely used in recent years. Among them, white light emitting diodes Body (White-UghtLED) The light-emitting mode mainly has the following three modes: (A) Red + green + blue mixed color of two kinds of light-emitting diodes: Although this mode has high luminous efficiency, its structure will not only be due to excessive number of electrodes, metal leads and wire bonding procedures. The shortcomings of high production cost and large volume of 1351711 are formed, and the wire drawing process is also prone to lead-out and die damage, which affects the production yield; (B) Blue-Light LED + Yellow phosphor powder: Although this mode has low cost and small volume, this method also requires a large number of electrodes, metal leads and wire bonding procedures, so the production yield of components will also have an adverse effect; And (C) ultraviolet light-emitting diode (uv LED) + white phosphor powder; although it is easy to manufacture and low in cost, the light source produced by the light source is a wave of wavelengths, and the red light is irradiated When the polarized light is weakly polarized, the color rendering of the light source is poor. In addition, the photometric attenuation is severe after the product is used. It is easy to produce qualitative and gradual changes, resulting in short component life and color cast of the product. 丄Factory / reverse., ...like/raw soil "especially fluorescent lamps will cause pollution to the environment (4); ❾X light-emitting diodes As a lighting system - point light source, although it has directivity, but direct visual light source, it will be: eye and discomfort - and in addition to easy to produce components, the color rendering is not good, and the product is more susceptible to qualitative change. Therefore, the general practitioner cannot meet the user's needs in actual use: [Summary of the Invention] The use of a pulsed high-voltage source rice noodle to generate a pulse-type main purpose of the present invention is to Meter carbon tube or 矽奈 6 135:1711 . The field effect electron source can excite a quantum dot inside the quantum dot fluorescent film to obtain a pulsed visible light source, thereby forming an energy-saving = energy flat type Lights. For the purpose of the above, the present invention is a method for preparing a pulsed high-pressure 矽 quantum dot fluorescent lamp, first selecting a first substrate, using an E-gun Evaporation system or a sputtering (Sputtenng) The SiS is coated on the first substrate with a buffer layer of a gold (four) crucible and a catalytic film of a nickel, aluminum or platinum metal film. Then, a chemical vapor deposition (Chemical Vap〇r ^ 〇 SltlGn, CVD) process is used to generate a nano-carbon ruthenium on the money layer, thereby forming an excitation source::: component: another option - a second substrate that is transparent, === film deposition method: synthesizing on the second substrate - "the same size is large, and the 'Hai Shi Xia point' fluorescent film is uniformly embedded in the light-emitting film The quantum dot 'to form a source of emission' as::I's anode component; the cathode group of ink source generated - pulsed corpse externally connected to the pulsed high to provide a throne "^子源" the pulse type high house Source system can be washed field: electron two ΐ ΐ; pulse = field effect electric field and accelerate the inside of the vein film of the stone 量子 quantum #, and stimulate the Shi Xi quantum dot fluorescent [implementation] ..,, called "explicit visible light Please refer to the "Fig. 1 to the e-th diagram" as shown in the figure of the invention. The production process of the invention is shown in Fig. 7 1351711. The invention is the first embodiment of the invention. : excitation 2, schematic diagram of the second substrate of the present invention, the source structure of the present invention The intention, the first part of the present invention - ^ BH ^ \ nine pieces are not intended to be a schematic diagram of a light-emitting element of the present month. As shown in the figure: the present invention is a method for preparing a pulsed high-pressure quantum dot fluorescent lamp, The method comprises at least the following steps: 〃 (A) selecting a first substrate 11 : as shown in FIG. 2, first selecting a first substrate 2 1 , wherein the first substrate 2 1 can be tantalum, glass, ceramic or One of the stainless steels; (B) constitutes an excitation source; [2: as shown in Figures 3A and 3B, using an E-gUn Evaporation system: or a sputtering system A buffer layer 2 2 of a titanium metal film and a catalytic layer 23 of a thin layer of nickel, aluminum or platinum metal are successively coated on the first substrate 2 1. Then, a chemical vapor deposition method (Chemical Vapor Deposition) is used. , CVD) process, using Ethane (CzH6) or methane (Methane, CH: 4) as the main source of 'generate a carbon nanotube 2 4 on the catalytic layer 23, also bite the line Methane (Monosilane, Si%) or Dichlorosilane (SiHzCb) is the main source, using the same potential 'Generating a nanowire 25 on the catalytic layer 23, thereby forming an excitation source 2 as a cathode component of the light-emitting element, wherein the carbon nanotube 24 or the nanowire 2 5 Having a nanometer size and conductivity; 135:1711 Lane 丄d: as shown in Fig. 4, a transparent second substrate 31, wherein the second substrate 3i can be glass, quartz or sapphire (Al2〇) 3) Select one of them; () and become the emission source 14: As shown in Fig. 5, 'the chemical vapor deposition method is used to synthesize a stone dielectric constant on the second substrate. The quantum dot fluorescent film 3 2 ' and the Shi Xi quantum dot fluorescent 溥臈 3 2 are uniformly embedded with a quantum dot 321 having a size of 1 1 10 mils, thereby forming a " as a luminescent element The anode assembly, wherein the quantum dot fluorescent film 32 can be polymerized: = ΓΓ and ' or carbonized dream... _ Carblde, ) 4 h or non-conductive substrate (10) (four) · and source: such as Lr: the pulsed high-voltage source excites a pulsed visible light', and the end-discharge-figure 6B shows 'the cathode assembly and ===;::2:_line 25, the voltage, Do not continue to pulse. And interval pulse 0.1 millisecond to 1G millisecond, generating H, field effect electron source, and established between the pulsed pole components; cathode assembly and yang acceleration the pulse II::; r / first film 32~ Quantum = again - pulsed visible light source. Thereby, the excitation source 2 and the pulsed high voltage source 4 are used to provide a pulsed % effect electron source with a force β velocity, and the pulsed high-source source 4 can have a potential difference to generate the pulsed field effect electric field and accelerate the pulse: The electrons in the electron source are further used to accelerate the electron excitation of the emission source 3 to generate the pulsed visible light source 2, and the invention can obtain stable pulse-like visible light by using lower electric energy. Source 'and then make this light element! Formed a flat-type 矽 fluorescent lamp with this function. The invention described above is a kind of "traffic high-pressure stone radiant quantum point fluorescing two method" which can effectively improve various shortcomings of the conventional use, and the light-emitting element composed of the two emission sources and the pulsed high-voltage source can greatly improve the energy-saving function. In order to make the requirements of the patent application of the present invention, according to the law::Special: please confirm that it has met the invention * * not ===, only the preferred embodiment of the present invention has been 'two-time TMization and repair, still Genus 2 10 [Simple description of the drawing] Fig. 1 is a schematic diagram of the production process of the present invention. Fig. 2 is a schematic view of a first substrate of the present invention. The f3A diagram is a schematic diagram of the structure of the first-excitation source of the present invention. Figure 3B is a schematic view showing the structure of the second excitation source of the present invention. Figure 4 is a schematic view of the second substrate of the present invention. Fig. 5 is a schematic view showing the structure of an emission source of the present invention. Fig. 6A is a schematic view of a light-emitting element of the present invention. Figure 6B is a schematic view of a second light-emitting element of the present invention. [Main component symbol description] Steps 11 to 15 Light-emitting element 1 Excitation source 2 First substrate 21 Buffer layer 2 2 Catalytic layer 2 3 Carbon nanotubes 2 4 矽 Nanowires 2 5 Source 3 Second substrate 3 1 1351711 Stone夕 quantum dot camp light film 3 2 矽 quantum dot 3 2 1 pulsed high voltage source 4