200903566 九、發明說明： 【發明所屬之技術領域】 ^ ^ 仏狐彳訂式尚壓矽量子點螢光p 之製備方法，尤指-種㈣—脈衝式μ = 二”奈米碳管或梦奈米線，產生-脈衝式場效二 源’可激發-矽量子點螢光薄膜内部之矽量子點 獲得脈衝式可見光源，進而 ”以 型石夕螢光燈。 4具即峨之平板 【先前技術】 二“ 茧九燈普遍被使用於照明。這稽 汞蒸氣燈利用汞蒸氣放電產生紫外光輕射後， 分別為紅（Red R)、绊r ^ ，K)綠（Green，G)及藍（Blue，B) 之三種螢光材料，並由該紅、綠及藍之營光材料發光 ，白色螢光燈。然而，使用於這些螢光燈内之求 對核境有害，因此並不適合目前提倡環保之時代。 又目月il市场上白光光源，除了傳統上之愛迪生卢 泡與螢㈣外，還有近年來廣泛使用之發光二極^ (Light Emitting Diode，咖）。而其中白光發光二極 體（齡Light LED)之發賴，主要 模式： 愧 (A)紅+綠+藍三種發光二極體之混色：該模式 雖然發光效率高’然而’其構造不僅將因為電極、金 屬引”泉及打線私序次數過多’而形成製作成本較高及 200903566 體積較大之缺點，且因為打線程序也容易造成引線脫 落及晶粒破損等影響生產良率之憾事發生； (B)監光發光二極體（Biue_Light LED) +黃色 螢光粉體：該模式雖然具有成本低及體積小，然而， 此種製私方法同樣需要具有較多次數之電極、金屬引 線及打線程序，因此對元件之製作良率同樣將造成不 良影響；以及 (c)各外光發光二極體（uv ) +白色螢光 粉體，雖具有製作簡易及成本低，然而其所產生之光 源係為二波段不連續光譜，在照射紅色物體時會呈現 微弱橙色之偏光現象，因而光源演色性較差。另外， 在產品使用後光度衰減情形嚴重，螢光物體在惡劣環 境下容易產生質變況狀，致使元件使用壽命較短及產 品產生偏色現象。 紅上所述，以汞蒸氣產生白光之螢光燈將對環境 造成汙染傷害；而以發光二極體作為照明系統呈現— 點光源，雖具有指向性，但直接目視光源，會顯得太 刺眼與不舒適感’並且除了容易對元件產生不良率 外，其光源演色性亦不佳，而產品更易於質變。故’ 一般習用者係無法符合使用者於實際使用時之所需。 【發明内容】 本發明之主要目的係在於，利用一脈衝式高壓源 與一陰極組件中奈米碳管或石夕奈米線，產生一脈衝义' 200903566 %效電子源，可激發一矽量子點螢光薄膜内部之矽量 子點，以獲得脈衝式可見光源，進而形成—具節能= 能之平板型矽螢光燈^ 、此 為達以上之目的，本發明係一種脈衝式高壓 子點螢光燈之製備方法’先選擇一第一基板，利用一 電子搶蒸鑛（E-gun Evaporati〇n )系統或— (补⑽ering)系統，在該第一基板上先後被鈦 "膜之緩衝層及一鎳、結或白金金屬薄膜之催化 層。接者利用一化學氣相薄膜沉積200903566 IX. Description of the invention: [Technical field of invention] ^ ^ Preparation method of 尚 彳 彳 尚 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 , , , , 四 四 四 四 四 四 四 四 四 四 四 四 梦 梦 制备 制备 制备 制备 制备 制备The nanowire, which produces a pulse-type field-effect two-source 'excitable-矽 quantum dot fluorescent film inside the quantum dot to obtain a pulsed visible light source, and then "type Shishi fluorescent lamp. 4 instant slabs [prior art] 2 茧 灯 灯 灯 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍 普遍) Three kinds of fluorescent materials of green (Green) and blue (Blue), and are illuminated by the red, green and blue camping materials, white fluorescent lamps. However, the use of these fluorescent lamps It is harmful to the nuclear environment, so it is not suitable for the era of promoting environmental protection. It is also a white light source on the market. In addition to the traditional Edison Lubu and Firefly (4), there are also widely used light-emitting diodes in recent years. , coffee). Among them, the white light emitting diode (age Light LED) is the main mode: 愧 (A) red + green + blue three kinds of light-emitting diodes: this mode although the luminous efficiency is high 'however' The structure will not only have the disadvantages of high manufacturing cost and large volume of 200,903,566 due to the excessive number of electrodes and metal "springs and the number of private lines", and the wire drawing process is also prone to lead drop and die damage, which affects the production yield. Regrets happen; (B) Biue_Light LED + yellow phosphor powder: Although this mode has low cost and small volume, this method of making a private method also requires a large number of electrodes, metal leads and wire bonding. The program, therefore, will also have an adverse effect on the fabrication yield of the component; and (c) each of the external light-emitting diode (uv) + white phosphor powder, although it is easy to manufacture and low in cost, the light source produced by it It is a two-band discontinuous spectrum, which will show a weak orange polarization when irradiating a red object, so the color rendering of the light source is poor. In addition, the luminosity attenuation is severe after the product is used, and the fluorescent object is prone to a qualitative change in a harsh environment, resulting in a short component life and a color cast of the product. According to the red, the fluorescent lamp that produces white light with mercury vapor will cause pollution damage to the environment; while the light-emitting diode is used as the illumination system to present the point light source, although it has directivity, direct visual light source will be too dazzling and Uncomfortable 'and in addition to easy to produce defective ratios on the components, the color rendering of the light source is also poor, and the product is more susceptible to qualitative change. Therefore, the general practitioners cannot meet the needs of the user in actual use. SUMMARY OF THE INVENTION The main object of the present invention is to generate a pulsed '200903566% effective electron source by using a pulsed high voltage source and a carbon nanotube or a stone nanowire in a cathode assembly to excite a quantum. Pointing the quantum dots inside the fluorescent film to obtain a pulsed visible light source, thereby forming a flat-type fluorescent lamp with energy saving = energy, which is for the purpose of above, the present invention is a pulsed high-voltage sub-point firefly The preparation method of the light lamp first selects a first substrate, and uses an E-gun Evaporati〇n system or a (10) ering system to be buffered by the titanium film on the first substrate. a layer and a catalytic layer of a nickel, nickel or platinum metal film. Using a chemical vapor deposition film
Deposits，CVD )制 咖cal Vapor 管或1夺：，在该催化層上生成-奈米碳 件之陰極組件；另選擇一為透明之第:為毛 '兀 化學氣相薄膜，、π并、七 土板利用该 點螢光薄膜，且 成-矽置子 同尺寸大小切量子Γ丄”係均勻嵌有不 該發光元件之組成—發射源，作為 輯產生-脈衝式場卜接之脈衝式高 提供—電位差、電子源，该脈衝式高壓源係可 衝式場效電子二產ί—脈衝式場效電場與加速該脈 薄膜内部之：之電子，進而激發該石夕量子點營光 之石夕置子點，以獲得—脈衝式可見光源。 200903566 【實施方式】 睛麥閱^第1圖〜笛门 α第6 Β圖』所示，係分別為本 Ρ月之製作流程示意圖、本發明之第—基板示意圖、 本發明之第—激發源結構*意圖、本發明之第二激發 源結構不意圖、本發明之第二基板示意圖、本發明之 發射源結：示意圖、本發明之第一發光元件示意圖及 本發明之弟二發光元件示意圖。如圖所示：本發明係 -種脈衝式高壓⑪量子點螢光燈之製備方法，其至少 包括下列步驟： (Α)選擇一第-基板1 1 :如第2圖所示，先 選擇-第-基板2 1，其中，該第—基板2 i係可為 矽、玻璃、陶瓷或不鏽鋼中擇其一； ⑻組成一激發源1 2 :如第3A圖及第38圖 所示n電子搶蒸鍵（E_gun Evap⑽tiQn)系统 或一濺射（Sputtering)系統’在該第一基板2丄上先 後被覆一鈦金屬薄膜之緩衝層2 2及一鎳、鋁或白全 金屬薄膜之催化層2 3。接著利用一化學氣相薄膜沉 積法（Chem丨cal Vapor Deposition, CVD)製程，以一 乙烷（Ethane, C2H6)或甲烷（Methane，CH4)為主要 碳源，在該催化層2 3上生成一奈米碳管2 4，亦或 係以一矽甲烷（Monosilane，SiH4)或一二氣矽甲烷 (Dichlorosi丨ane，Sihcb )為主要矽源，利用同樣= 程，在該催化層2 3上生成一矽奈米線2 5，藉此以 組成一激發源2 ’作為發光元件之陰極組件，其中， 200903566 該奈米碳管24切奈米線25係具有奈米 電性； )、擇第二基板13:如第4圖所示，另選 ’擇-為透明之第二基板31，其中，該第二基、 係可為玻璃、石英或藍寶石⑺2Q3)中擇其一； (D)組成—發射源1 4 :如第5圖所示，利用 該=氣相薄膜沉積法，於該第二基板31上合成: 具…I電常數之矽量子點螢光薄膜3 2，且該矽量子 峨薄膜”中係均勾嵌有同時含丨至心： :二问尺夕量子點321，藉此以組成 ’、 作為忒發光凡件之陽極組件，苴中，$ 勞光薄膜”係可為高分子、:合； 氧切（Sili⑽〇xide Si〇)、氮化石夕Deposits, CVD) Cal Vapor tube or 1 s:: a cathode component of the nanocarbon piece is formed on the catalytic layer; and a transparent one is selected: a 兀 兀 chemical vapor film, π and The seven soil plates use the fluorescent film at the same point, and the tantalum-like quantum Γ丄" is uniformly embedded with the composition of the light-emitting element--the emission source, which is a pulse-type high-order-pulse field connection. Providing a potential difference and an electron source, the pulsed high-voltage source is a rushable field effect electron ternary ί-pulse field effect electric field and an electron that accelerates the inside of the pulse film, thereby exciting the stone eve of the luminescent quantum point camp The sub-point is obtained to obtain a pulsed visible light source. 200903566 [Embodiment] FIG. 1 is a schematic diagram of the production process of the present invention, which is shown in FIG. - Schematic diagram of the substrate, the first excitation source structure of the present invention, the second excitation source structure of the present invention, the second substrate schematic of the present invention, the emission source junction of the present invention: a schematic diagram, the first light-emitting element of the present invention Schematic and The invention is a schematic diagram of two light-emitting elements. As shown in the figure, the present invention is a method for preparing a pulsed high-pressure 11-quantum dot fluorescent lamp, which comprises at least the following steps: (Α) selecting a first substrate 1 1 : 2, first select - the first substrate 2 1, wherein the first substrate 2 i can be one of tantalum, glass, ceramic or stainless steel; (8) constitute an excitation source 1 2: as shown in Figure 3A The n-electron steaming button (E_gun Evap (10) tiQn) system or a sputtering system shown in Fig. 38 is coated on the first substrate 2 with a buffer layer 2 of titanium metal film and a nickel, aluminum or white coating. The catalytic layer of the all-metal thin film is 23. Then, a chemical vapor deposition (CVD) process is used, with ethane (Ethane, C2H6) or methane (Methane, CH4) as the main carbon source. A carbon nanotube 24 is formed on the catalytic layer 23, or a monosilane (SiH4) or a dichlorosi丨ane (Sihcb) is used as the main source, and the same Forming a nanowire 2 5 on the catalytic layer 23, thereby forming an excitation source 2 'Cathode assembly as a light-emitting element, wherein, 200903566, the carbon nanotube 24 Chennai line 25 series has nanometer electrical properties; ), the second substrate 13 is selected: as shown in Fig. 4, another option is selected a transparent second substrate 31, wherein the second substrate may be one of glass, quartz or sapphire (7) 2Q3); (D) composition - emission source 14: as shown in Fig. 5, using the gas The phase thin film deposition method is: synthesizing on the second substrate 31: a quantum dot fluorescent film 3 2 having an electric constant of 1 I, and the 矽 quantum 峨 film is embedded in the 同时 丨 to the heart: : 2 The quantum dot 321 is used to form the anode component of the illuminating component, and the 劳 ,, 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳 劳Fossil eve
SiC)CJl ^lde，SiN) Carbide, 性或非導電性之基材（MatdxH及 源:如第6::Γ第：㈣激發得一脈衝式可見光 W： ^ _ 0 圖所不，將該陰極組件申1 …電特性之奈米碳管2 4或石夕奈米…，：： —外接之脈衝式高訪4，α 1 ^ 错由 特之電壓，分別持續脈衝01毫， 至1萬伏 ，脈衝。.,毫秒至】。毫秒之時二)至 電場外，並能加綱衝以==場： 200903566 激發該矽量子點螢光薄膜3 2内部之矽 1，進而獲得一脈衝式可見光源。 ‘· 利用該激發源2及該脈衝式高 加速之脈衝式場效電子源，而該脈 = 衝i場：脈衝式場效電場與加逮該脈 Γ、= 電子，再藉此脈衝式場效㈣ 乂加速電子激發該發射源3以產 、 源。因此，本發明能利用較低之電能:：=二 可見光源’進而使此發光元 具有即迠功能之平板型矽螢光燈。 光严本發明係—種脈衝式高㈣量子點勞 衣備方法’可有效改善習用之種種缺點，葬由 發射源及脈衝式高麼源所組成之發光元二 即獲得穩定之高亮度脈衝式可見光 源可大大提幵卽能功能 隹 進而使本發明之産生能更 專二由戶、£付合使用者之所須，確已符合發明 專利申請之要件，爰依法提㈣利申請。 #惟以上所述者，僅為本發明之較佳實施例而已， 以此限定本發明實施之範圍…凡依本發明 範圍及發明說明書内容所作之簡單的等效變 化4飾’皆應仍屬本發明專利涵蓋之範圍内。 10 200903566 【圖式簡單說明】 第1圖，係本發明之製作流程示意圖。 第2圖，係本發明之第一基板示意圖。 第3 A圖，係本發明之第一激發源結構示意圖。 第3 B圖，係本發明之第二激發源結構示意圖。 第4圖，係本發明之第二基板示意圖。 第5圖，係本發明之發射源結構示意圖。 第6 A圖，係本發明之第一發光元件示意圖。 第6 B圖，係本發明之第二發光元件示意圖。 【主要元件符號說明】 步驟11〜15 發光元件1 激發源2 第一基板2 1 緩衝層2 2 催化層2 3 奈米碳管2 4 矽奈米線2 5 發射源3 第二基板3 1 200903566 矽量子點螢光薄膜3 2 矽量子點3 2 1 脈衝式高壓源4SiC) CJl ^lde, SiN) Carbide, substrate of non-conductive or non-conductive (MatdxH and source: as in 6:: Γ: (4) excited by a pulsed visible light W: ^ _ 0 Figure no, the cathode The component of the application ... 1 electric characteristics of the carbon nanotubes 2 4 or Shi Xi Nai ..., :: - external pulse type high visit 4, α 1 ^ wrong by the voltage, respectively, continuous pulse 01 milli, to 10,000 volts , pulse.., millisecond to]. When the millisecond is 2) to the outside of the electric field, and can be added to the == field: 200903566 to excite the internal 萤1 of the quantum dot fluorescent film 3 2, thereby obtaining a pulsed visible light source. Using the excitation source 2 and the pulsed high-acceleration pulsed field effect electron source, and the pulse = rushing i field: pulsed field effect electric field and adding the pulse, = electron, and then pulsed field effect (4) The accelerated electrons excite the source 3 to produce and source. Therefore, the present invention can utilize a lower electric energy::=two visible light sources' and thus the illuminating element has a sputum-type sputum fluorescent lamp. The invention of the invention is a high-intensity pulse type method which can effectively improve the conventional disadvantages of the illuminating element composed of the emission source and the pulsed high source. The visible light source can greatly enhance the function of the invention, so that the production of the present invention can be more specifically required by the household and the user of the payment, and it has indeed met the requirements of the invention patent application, and the application is filed according to law. The above is only the preferred embodiment of the present invention, and thus the scope of the present invention is limited thereto. Any simple equivalent change 4 of the scope of the present invention and the description of the invention should still be The scope of the invention is covered. 10 200903566 [Simple description of the drawings] Fig. 1 is a schematic diagram of the production process of the present invention. Figure 2 is a schematic view of the first substrate of the present invention. Figure 3A is a schematic view showing the structure of the first excitation source of the present invention. Figure 3B is a schematic view showing the structure of the second excitation source of the present invention. Figure 4 is a schematic view of a second substrate of the present invention. Fig. 5 is a schematic view showing the structure of an emission source of the present invention. Figure 6A is a schematic view of the first light-emitting element of the present invention. Figure 6B is a schematic view of a second light-emitting element of the present invention. [Description of main component symbols] Steps 11 to 15 Light-emitting element 1 Excitation source 2 First substrate 2 1 Buffer layer 2 2 Catalytic layer 2 3 Carbon nanotubes 2 4 Nanowires 2 5 Source 3 Second substrate 3 1 200903566矽 quantum dot fluorescent film 3 2 矽 quantum dot 3 2 1 pulsed high voltage source 4