丄川/45 九、發明說明： 【發明所屬之技術領域】 本發明係有關於-種半導體封裝構造，更特別有關於— =半導體封裝構造’其散熱片之環形條狀凸部環繞晶片承 【先前技術】 積體電路封裝的型式很多，舉例來說，以_連接的型 有薄小外接腳封裝_η贿丨“ )、四方扁平封裝（(^以1?1討1^心牦6，（^1>)等封裝， 屬導線架支擇封裝結構’藉著兩面或四邊的引卿和電 板^連接。球格陣列（baU grid a叫，BGA)封裝是藉 路㈣接，因此針衫型式，其散熱模式 $不盡相同，目前業界之因應方式係裝設 置於封襄結構令，以提高散熱效率。 政…裝 參考第1圖，習知半導體封裝構造1〇主要 架⑴一晶片⑴一散熱片13及一封缪體14。該晶= :藉由黏膠15而固定於該導線架u之晶片承座20上，並 藉由銲線（圖未示）電性連接至該導線架u之引腳16。 熱片Π係直接貼設於該晶片承座2〇之下表面22,用以將 該晶片〗2所產生的熱傳導至外界。^而，該晶片承座 與該散熱片13之間常因接觸表面不平整而存有空隙24。 由於空隙24狭小使得該封膠體14無法填充於空隙24，因 此當該半㈣封裝構造1G進行可靠度相m载時，今 空隙24會造成該晶片承座22與該散熱片U之間發生界面 01286-TW/ASE2033, 5BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package structure, and more particularly to a semiconductor package structure in which an annular strip-shaped convex portion of a heat sink surrounds a wafer carrier. Prior art] There are many types of integrated circuit packages, for example, a _connected type has a thin external pin package _η bribe "), a quad flat package ((^ is 1?1 1^心牦6, (^1>) and other packages, which are lead frame-selective package structures 'connected by two or four sides of the guide and the electric board ^. The grid array (baU grid a, BGA) package is the way (four), so the needle The type of shirt, the heat dissipation mode is not the same, the current industry response method is installed in the sealing structure to improve the heat dissipation efficiency. The government is equipped with reference to Figure 1, the conventional semiconductor package structure 1 main frame (1) a wafer (1) a heat sink 13 and a body 14. The crystal = is fixed to the wafer holder 20 of the lead frame u by an adhesive 15, and is electrically connected to the wire holder (not shown). The lead frame of the lead frame u. The hot film is directly attached to the wafer holder 2 The surface 22 is used to conduct the heat generated by the wafer 2 to the outside. However, the gap between the wafer holder and the heat sink 13 is often uneven due to the uneven contact surface. The gap is narrow due to the narrow gap 24. The colloid 14 cannot be filled in the gap 24, so when the half (four) package structure 1G is subjected to the reliability phase m, the gap 24 will cause the interface 01286-TW/ASE2033 between the wafer holder 22 and the heat sink U, 5
S 1351745 脫層（Delamination)，如第2圖所示。 舉例來說，習知四方扁平封裝（QFp)之封裝構造1〇經潮 破感度等級 3 (攝氏 260°C)(inoisture sensitivity level 3, MSL 3)之測試時，該散熱片13與該晶片承座22之間就會 出現較大的間隙。在此情況下，該間隙24使該導線架U 與散熱片13未能良好接合，進而阻礙該晶片12產生之熱 2傳導至該散熱片13，破壞四方扁平封裝（QFp)之封裝構 以10之散熱功能。更甚纟’過大的間隙不僅會使封裝結構 無法達到預期散熱效果，還可能導致整個封裝結構遭到損 因此，便有需要提供一種半導體封裝構造及其散熱片， 能夠解決前述的缺點。 【發明内容】 本發明之-目的在於提供—種半導體封裝構造，其散熱 片之環形條狀凸部可藉由環婊曰 稭由裱繞曰曰片承座而阻止該晶片承座 與該散熱片之間空隙向外延伸。. 一曰為達上述目的，本發明提供-種半導體封裝構造，包含 曰曰片 導線架、—散熱片及-封膠體。該導線架包含 曰日片承座’其承載該晶片。兮斗也u / 曰月该散熱片係貼設於該晶片承 座上，並包含一本體及一環 衣办條狀凸部。該本體具有一表 面’其中該表面接觸續a ti$Tr 接觸該曰曰片承座。該環形條狀四部係配置 於該本體之表面上，並環妞 Sy 該日日片承座。該封膠體係用以 包覆該導線架之部分、晶片及散熱片。 雖然該晶片承座與該散轨# 散…月之間可能會因接觸表面不 01286-TW/ASE2033 6 1351745 平整而存有空隙，但是本發明之散熱片之環形條狀凸部可 藉由環繞該晶片承座而阻止該空隙向外延伸，進而阻止該 b曰片承座與該散熱片之間發生界面脫層（Delaminati〇n)。 為了讓本發明之上述和其他目的、特徵、和優點能更明 顯’下文將配合所附圖示，作詳細說明如下。 【實施方式】 參考第3a及3b圖，其顯示本發明之一實施例之半導體 • 封裝構造100。該半導體封裝構造100包含一晶片110、一 導線架120、一散熱片150及一封膠體16〇。該導線架12〇 包含四個支撐肋條122及一晶片承座124,該支撐肋條122 連接於晶片承座124之角落，且該晶片承座124用以承載 該晶片110。該晶片11〇係藉由黏膠112而固定於該導線架 iZO之晶片承座124之上表面126，並藉由銲線（圖未示）電 性連接至該導線架120之引腳128。該散熱片15〇係貼設 於該晶片承座124之下表面130，用以將該晶片11〇所產 鲁 生的熱傳導至外界。該散熱片150包含一本體152及一環 形條狀凸部154 »該本體152具有一上表面156及一下表 面158,其中該本體152之上表面156接觸該晶片承座124 之下表面130，且該本體152之下表面158係相對於該本 體1 52之上表面1 56。該環形條狀凸部丨54係配置於該本 體152之上表面156，並環繞該晶片承座124。較佳地，該 環开> 條狀凸部1 54鄰近於該晶片承座124。該封膠體1 60 係用以包覆該導線架120、晶片no及散熱片i5〇,並裸露 出該導線架120之部分引腳128及該散熱片150之下表面 01286-TW/ASE2033 7 158。 1351745 雖然該晶片承座124與該散熱片15〇之間可能 表面不平整而存有空隙，作a太 泉仁疋本發明之散熱片150之環形 條狀凸部154可藉由環繞該晶片承座m而阻止該空二 外延伸，、進而阻止該晶片承座124與該散熱片i5Q之間發 生界面脫層（Delamination)。 參考第4&及41)圖，該環形條狀凸部154係配置於該本S 1351745 Delamination, as shown in Figure 2. For example, when the conventional quad flat package (QFp) package structure 1 is tested by the inhospire sensitivity level 3 (MSL 3), the heat sink 13 and the wafer carrier A large gap will occur between the seats 22. In this case, the gap 24 causes the lead frame U and the heat sink 13 to fail to be well joined, thereby preventing the heat generated by the wafer 12 from being conducted to the heat sink 13 and destroying the package of the quad flat package (QFp). The heat dissipation function. What's more, the excessive gap will not only cause the package structure to fail to achieve the desired heat dissipation effect, but may also cause damage to the entire package structure. Therefore, it is necessary to provide a semiconductor package structure and a heat sink thereof, which can solve the aforementioned drawbacks. SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor package structure in which an annular strip-like protrusion of a heat sink can prevent the wafer holder from being dissipated by a loop of a crucible. The gap between the sheets extends outward. In order to achieve the above object, the present invention provides a semiconductor package structure comprising a ruthenium lead frame, a heat sink and a sealant. The lead frame includes a crucible carrier 'which carries the wafer. The bucket is also attached to the wafer holder and includes a body and a ring-like protrusion. The body has a surface 'where the surface contacts a ti$Tr contacting the cymbal holder. The annular strip-shaped four-part system is disposed on the surface of the body, and the ring-shaped Sy. The encapsulation system is used to cover portions of the leadframe, the wafer, and the heat sink. Although the gap between the wafer holder and the loose rail may be flat due to the contact surface not being 01286-TW/ASE2033 6 1351745, the annular strip protrusion of the heat sink of the present invention may be surrounded by The wafer holder prevents the gap from extending outward, thereby preventing interface delamination between the b-plate holder and the heat sink. The above and other objects, features and advantages of the present invention will become more apparent < [Embodiment] Referring to Figures 3a and 3b, a semiconductor package structure 100 according to an embodiment of the present invention is shown. The semiconductor package structure 100 includes a wafer 110, a lead frame 120, a heat sink 150, and a gel 16 〇. The lead frame 12A includes four support ribs 122 and a wafer holder 124. The support ribs 122 are connected to the corners of the wafer holder 124, and the wafer holder 124 is used to carry the wafer 110. The wafer 11 is fixed to the upper surface 126 of the wafer holder 124 of the lead frame iZO by an adhesive 112, and is electrically connected to the lead 128 of the lead frame 120 by a bonding wire (not shown). The heat sink 15 is attached to the lower surface 130 of the wafer holder 124 for conducting the heat generated by the wafer 11 to the outside. The heat sink 150 includes a body 152 and an annular strip-shaped protrusion 154. The body 152 has an upper surface 156 and a lower surface 158, wherein the upper surface 156 of the body 152 contacts the lower surface 130 of the wafer holder 124, and The lower surface 158 of the body 152 is opposite the upper surface 156 of the body 152. The annular strip protrusion 54 is disposed on the upper surface 156 of the body 152 and surrounds the wafer holder 124. Preferably, the ring-opening < strip-like projections 1 54 are adjacent to the wafer holder 124. The encapsulant 1 60 is used to cover the lead frame 120, the chip no and the heat sink i5〇, and expose a part of the lead 128 of the lead frame 120 and the lower surface of the heat sink 150 01286-TW/ASE2033 7 158 . 1351745 Although the surface of the wafer holder 124 and the heat sink 15〇 may be uneven and there is a gap, the annular strip protrusion 154 of the heat sink 150 of the present invention may be surrounded by the wafer bearing The m prevents the outer extension of the space, thereby preventing interface delamination between the wafer holder 124 and the heat sink i5Q. Referring to Figures 4 & and 41), the annular strip-like projection 154 is disposed in the present
體152之上表面156。在本實施例中，該環形條狀凸部154 係可為-矩形條狀凸部，諸如正方形或長方形條狀凸部。 在另實⑯例中’該環形條狀凸部154亦可為圓形條狀凸 部或橢圓形條狀凸部。該環形條狀凸吾"54之剖面係可 矩形。 再參考第4b圖，在本實施例中，該環形條狀凸部ΐ54 與該本體152係可為不同材質，且該環形條狀凸部154係 藉由黏膠（圖未示）固定於該本體152上。該環形條狀凸部 154係可為金屬氧化物所製，且該本冑152係可為金屬所 製。由於金屬氧化物與封膠冑16〇之間的接合性大於該晶 片承座124(金屬所製）與封膠體16〇之間的接合性，因= 更有i地阻止該空隙向外延伸。舉例而言’該環形條狀四 部154為氧化銅所製，且該本體152為銅金屬所製。或者， 該環形條狀凸部154為氧化铭所製，且該本體152為紹金 屬所製。參考第5 ®，在另—實施例中，該環形條狀凸部 154’與該本體152係可為同一材質，並一體成形被製造。 舉例而言，該環形條狀凸部154,與該本體152皆為銅金屬 01286-TW/ASE2033 8 1351745 或鋁金屬所製。該環形條狀凸部154，係可藉由衝壓或鍛 製程而被製造。 雖然本發明已以前述實施例揭示，然其並非用以限定本 發明，任何本發明所屬技術領域中具有通常知識者，在不 脫離本發明之精神和範圍内，當可作各種之更動與修改。 因此本發明之保護範圍當視後附之申請專利範圍所界定者 為準。 【圖式簡單說明】 第1圖為先前技術之半導體封裝構造之剖面示意圖，其 顯示晶片承座20與該散熱片13之間存有空隙24。 第2圖為先前技術之該半導體封裝構造之剖面示音 圖’其顯示該空隙24造成該晶片承座22與該散熱片13之 間發生界面脫層片。 第3a及3b圖為本發明之一實施例之半導體封裝構造之 平面及剖面示意圖。 第4a及4b圖為本發明之一實施例之散熱片之平面及别 面示意圖。 第5圖為本發明之另一實施例之散熱片之剖面示章、圖。 【主要元件符號說明】 10 半導體封裝構造 .12 晶片 14 封膠體 11 導線架 13 散熱片 15 黏膠 01286-TW/ASE2033 9 1351745 16 引腳 20 晶片承座 22 下表面 24 空隙 100 半導體封裝構造 110 晶片 112 黏膠 120 導線架 122 支撐肋條 124 晶片承座 126 上表面 128 引腳 130 下表面 150 散熱片 152 本體 154 環形條狀凸部 1545 環形條狀凸部 156 上表面 158 下表面 160 封膠體 01286-TW/ASE2033 - 10The upper surface 156 of the body 152. In the present embodiment, the annular strip-like projections 154 may be - rectangular strip-shaped projections such as square or rectangular strip-shaped projections. In the case of another 16 cases, the annular strip-shaped convex portion 154 may be a circular strip-shaped convex portion or an elliptical strip-shaped convex portion. The circular strip-shaped convex shape "54 has a rectangular cross section. Referring to FIG. 4b, in the embodiment, the annular strip-shaped protrusions 54 and the body 152 can be made of different materials, and the annular strip-shaped protrusions 154 are fixed by glue (not shown). On the body 152. The annular strip-like projection 154 can be made of a metal oxide, and the base 152 can be made of metal. Since the bond between the metal oxide and the sealant 16 is greater than the bond between the wafer holder 124 (made of metal) and the sealant 16, the gap is prevented from extending outward. For example, the annular strip-shaped portion 154 is made of copper oxide, and the body 152 is made of copper metal. Alternatively, the annular strip-like projection 154 is made of oxidized, and the body 152 is made of Shaojin. Referring to the fifth embodiment, in another embodiment, the annular strip-like projection 154' and the body 152 may be of the same material and integrally formed. For example, the annular strip-shaped protrusions 154 and the body 152 are made of copper metal 01286-TW/ASE2033 8 1351745 or aluminum metal. The annular strip-like projections 154 can be manufactured by stamping or forging. The present invention has been disclosed in the foregoing embodiments, and is not intended to limit the present invention. Any of the ordinary skill in the art to which the invention pertains can be modified and modified without departing from the spirit and scope of the invention. . Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a prior art semiconductor package structure showing a gap 24 between the wafer holder 20 and the heat sink 13. Figure 2 is a cross-sectional view of the prior art semiconductor package structure showing the void 24 causing an interfacial delamination between the wafer carrier 22 and the heat sink 13. 3a and 3b are plan and cross-sectional views showing a semiconductor package structure according to an embodiment of the present invention. 4a and 4b are plan and other schematic views of a heat sink according to an embodiment of the present invention. Fig. 5 is a cross-sectional view and a view showing a heat sink according to another embodiment of the present invention. [Main component symbol description] 10 Semiconductor package structure. 12 Wafer 14 Sealant 11 Lead frame 13 Heat sink 15 Adhesive 01286-TW/ASE2033 9 1351745 16 Pin 20 Wafer holder 22 Lower surface 24 Void 100 Semiconductor package structure 110 Wafer 112 Adhesive 120 lead frame 122 support rib 124 wafer holder 126 upper surface 128 pin 130 lower surface 150 heat sink 152 body 154 annular strip protrusion 1545 annular strip protrusion 156 upper surface 158 lower surface 160 sealant 01286- TW/ASE2033 - 10