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TWI351074B - Semiconductor device and method for manufacturing semiconductor device - Google Patents

Semiconductor device and method for manufacturing semiconductor device

Info

Publication number
TWI351074B
TWI351074B TW096130768A TW96130768A TWI351074B TW I351074 B TWI351074 B TW I351074B TW 096130768 A TW096130768 A TW 096130768A TW 96130768 A TW96130768 A TW 96130768A TW I351074 B TWI351074 B TW I351074B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
manufacturing
manufacturing semiconductor
semiconductor
Prior art date
Application number
TW096130768A
Other languages
English (en)
Other versions
TW200816380A (en
Inventor
Yoshihisa Kagawa
Tsutomu Shimayama
Takatoshi Kameshima
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200816380A publication Critical patent/TW200816380A/zh
Application granted granted Critical
Publication of TWI351074B publication Critical patent/TWI351074B/zh

Links

Classifications

    • H10D64/011—
    • H10W20/47—
    • H10W20/071—
    • H10W20/072—
    • H10W20/075—
    • H10W20/087—
    • H10W20/425—
    • H10W20/46—
    • H10W20/48—
TW096130768A 2006-09-04 2007-08-20 Semiconductor device and method for manufacturing semiconductor device TWI351074B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006238628A JP4419025B2 (ja) 2006-09-04 2006-09-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200816380A TW200816380A (en) 2008-04-01
TWI351074B true TWI351074B (en) 2011-10-21

Family

ID=39150356

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096130768A TWI351074B (en) 2006-09-04 2007-08-20 Semiconductor device and method for manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US7602061B2 (zh)
JP (1) JP4419025B2 (zh)
KR (1) KR101354126B1 (zh)
TW (1) TWI351074B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194072A (ja) * 2008-02-13 2009-08-27 Toshiba Corp 半導体装置の製造方法
JP5391594B2 (ja) * 2008-07-02 2014-01-15 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2010129950A (ja) * 2008-12-01 2010-06-10 Panasonic Corp 半導体装置及びその製造方法
US8252192B2 (en) * 2009-03-26 2012-08-28 Tokyo Electron Limited Method of pattern etching a dielectric film while removing a mask layer
JP5487469B2 (ja) * 2010-03-29 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8916051B2 (en) * 2010-12-23 2014-12-23 United Microelectronics Corp. Method of forming via hole
US8552540B2 (en) * 2011-05-10 2013-10-08 Conexant Systems, Inc. Wafer level package with thermal pad for higher power dissipation
US8932934B2 (en) * 2013-05-28 2015-01-13 Global Foundries Inc. Methods of self-forming barrier integration with pore stuffed ULK material
US20210384140A1 (en) 2020-06-08 2021-12-09 Nanya Technology Corporation Semiconductor device with adjustment layers and method for fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334873A (ja) 2001-05-10 2002-11-22 Toshiba Corp 半導体装置およびその製造方法
US7018918B2 (en) * 2002-11-21 2006-03-28 Intel Corporation Method of forming a selectively converted inter-layer dielectric using a porogen material
JP2004235548A (ja) 2003-01-31 2004-08-19 Nec Electronics Corp 半導体装置およびその製造方法
US6774053B1 (en) * 2003-03-07 2004-08-10 Freescale Semiconductor, Inc. Method and structure for low-k dielectric constant applications
JP4578816B2 (ja) 2004-02-02 2010-11-10 Ｏｋｉセミコンダクタ株式会社 半導体装置およびその製造方法
JP4194508B2 (ja) * 2004-02-26 2008-12-10 三洋電機株式会社 半導体装置の製造方法
JP2006024811A (ja) * 2004-07-09 2006-01-26 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP4419025B2 (ja) 2010-02-24
JP2008060498A (ja) 2008-03-13
US7602061B2 (en) 2009-10-13
TW200816380A (en) 2008-04-01
US20080054454A1 (en) 2008-03-06
KR101354126B1 (ko) 2014-01-22
KR20080021553A (ko) 2008-03-07

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees