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TWI341001B - Bonding pad structure for optoelectronic device and fabrication method thereof - Google Patents

Bonding pad structure for optoelectronic device and fabrication method thereof

Info

Publication number
TWI341001B
TWI341001B TW096114253A TW96114253A TWI341001B TW I341001 B TWI341001 B TW I341001B TW 096114253 A TW096114253 A TW 096114253A TW 96114253 A TW96114253 A TW 96114253A TW I341001 B TWI341001 B TW I341001B
Authority
TW
Taiwan
Prior art keywords
bonding pad
optoelectronic device
fabrication method
pad structure
fabrication
Prior art date
Application number
TW096114253A
Other languages
English (en)
Other versions
TW200830438A (en
Inventor
Kai Chih Wang
Fang Chang Liu
Original Assignee
Visera Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Visera Technologies Co Ltd filed Critical Visera Technologies Co Ltd
Publication of TW200830438A publication Critical patent/TW200830438A/zh
Application granted granted Critical
Publication of TWI341001B publication Critical patent/TWI341001B/zh

Links

Classifications

    • H10W72/019—
    • H10W72/075—
    • H10W72/07537—
    • H10W72/536—
    • H10W72/59—
    • H10W72/923—
    • H10W72/9232—
    • H10W72/934—
    • H10W72/9415—
    • H10W72/952—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49204—Contact or terminal manufacturing
    • Y10T29/49224—Contact or terminal manufacturing with coating
TW096114253A 2007-01-11 2007-04-23 Bonding pad structure for optoelectronic device and fabrication method thereof TWI341001B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/652,095 US7679187B2 (en) 2007-01-11 2007-01-11 Bonding pad structure for back illuminated optoelectronic device and fabricating method thereof

Publications (2)

Publication Number Publication Date
TW200830438A TW200830438A (en) 2008-07-16
TWI341001B true TWI341001B (en) 2011-04-21

Family

ID=39616889

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114253A TWI341001B (en) 2007-01-11 2007-04-23 Bonding pad structure for optoelectronic device and fabrication method thereof

Country Status (3)

Country Link
US (2) US7679187B2 (zh)
CN (1) CN100587953C (zh)
TW (1) TWI341001B (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5034740B2 (ja) * 2007-07-23 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US20090289360A1 (en) * 2008-05-23 2009-11-26 Texas Instruments Inc Workpiece contact pads with elevated ring for restricting horizontal movement of terminals of ic during pressing
JP4655137B2 (ja) * 2008-10-30 2011-03-23 ソニー株式会社 半導体装置
US8502335B2 (en) * 2009-07-29 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor big via bonding pad application for AlCu Process
US8748946B2 (en) * 2010-04-29 2014-06-10 Omnivision Technologies, Inc. Isolated wire bond in integrated electrical components
US8753917B2 (en) * 2010-12-14 2014-06-17 International Business Machines Corporation Method of fabricating photoconductor-on-active pixel device
TWI497668B (zh) * 2011-07-27 2015-08-21 矽品精密工業股份有限公司 半導體封裝件及其製法
US8441131B2 (en) * 2011-09-12 2013-05-14 Globalfoundries Inc. Strain-compensating fill patterns for controlling semiconductor chip package interactions
KR101916088B1 (ko) 2012-04-02 2018-11-07 삼성전자주식회사 반도체 패키지
US9691809B2 (en) * 2013-03-14 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated image sensor device having an oxide film and method of forming an oxide film of a backside illuminated image sensor device
JP2015228443A (ja) * 2014-06-02 2015-12-17 豊田合成株式会社 発光素子及びその製造方法
US11164997B2 (en) 2016-08-17 2021-11-02 The Regents Of The Univeristy Of California III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent
US10109574B1 (en) 2017-04-04 2018-10-23 Texas Instruments Incorporated Structure and method for improving high voltage breakdown reliability of a microelectronic device
DE102018105462A1 (de) * 2018-03-09 2019-09-12 Infineon Technologies Ag Halbleitervorrichtung, die ein bondpad und einen bonddraht oder -clip enthält
US11049820B2 (en) * 2018-07-30 2021-06-29 Texas Instruments Incorporated Crack suppression structure for HV isolation component

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4538107B2 (ja) * 1998-03-02 2010-09-08 エヌエックスピー ビー ヴィ 半導体素子及び金属化層を有する絶縁層が接着剤により取付られているガラス支持体を有する半導体装置
US6765277B2 (en) * 2002-01-15 2004-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Microelectronic fabrication with corrosion inhibited bond pad
TWI229435B (en) * 2002-06-18 2005-03-11 Sanyo Electric Co Manufacture of semiconductor device
JP4046069B2 (ja) * 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
TWI284402B (en) * 2005-12-30 2007-07-21 Advanced Semiconductor Eng Build-up package and method of an optoelectronic chip

Also Published As

Publication number Publication date
US8361898B2 (en) 2013-01-29
US7679187B2 (en) 2010-03-16
CN101221948A (zh) 2008-07-16
TW200830438A (en) 2008-07-16
CN100587953C (zh) 2010-02-03
US20100127408A1 (en) 2010-05-27
US20080169117A1 (en) 2008-07-17

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