TWI340452B - Dual flat non-leaded semiconductor package - Google Patents

Dual flat non-leaded semiconductor package

Info

Publication number: TWI340452B
Authority: TW; Taiwan
Prior art keywords: semiconductor package; flat non; dual flat; leaded semiconductor; leaded
Prior art date: 2005-01-05

Application number

TW094146213A

Other languages

Chinese (zh)

Other versions

TW200639994A (en

Inventor

Liu Kai

Tian Zhang Xiao

Sun Ming

Luo Leeshawn

Original Assignee

Alpha & Omega Semiconductor

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-01-05

Filing date

2005-12-23

Publication date

2011-04-11

2005-12-23 Application filed by Alpha & Omega Semiconductor filed Critical Alpha & Omega Semiconductor

2006-11-16 Publication of TW200639994A publication Critical patent/TW200639994A/en

2011-04-11 Application granted granted Critical

2011-04-11 Publication of TWI340452B publication Critical patent/TWI340452B/en

Classifications

- H10W70/481—
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
- H10W72/075—
- H10W72/07554—
- H10W72/536—
- H10W72/5363—
- H10W72/5449—
- H10W72/547—
- H10W72/5473—
- H10W72/5475—
- H10W72/5522—
- H10W72/5525—
- H10W90/756—

TW094146213A 2005-01-05 2005-12-23 Dual flat non-leaded semiconductor package TWI340452B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US11/029,653 US20060145312A1 (en)	2005-01-05	2005-01-05	Dual flat non-leaded semiconductor package

Publications (2)

Publication Number	Publication Date
TW200639994A TW200639994A (en)	2006-11-16
TWI340452B true TWI340452B (en)	2011-04-11

Family

ID=36639465

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW094146213A TWI340452B (en)	2005-01-05	2005-12-23	Dual flat non-leaded semiconductor package

Country Status (4)

Country	Link
US (1)	US20060145312A1 (en)
CN (1)	CN101091247B (en)
TW (1)	TWI340452B (en)
WO (1)	WO2006074312A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7898092B2 (en) *	2007-11-21	2011-03-01	Alpha & Omega Semiconductor,	Stacked-die package for battery power management
US7884454B2 (en)	2005-01-05	2011-02-08	Alpha & Omega Semiconductor, Ltd	Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
US8618674B2 (en) *	2008-09-25	2013-12-31	Infineon Technologies Ag	Semiconductor device including a sintered insulation material
US8373257B2 (en) *	2008-09-25	2013-02-12	Alpha & Omega Semiconductor Incorporated	Top exposed clip with window array
US8164199B2 (en) *	2009-07-31	2012-04-24	Alpha and Omega Semiconductor Incorporation	Multi-die package
US9257375B2 (en)	2009-07-31	2016-02-09	Alpha and Omega Semiconductor Inc.	Multi-die semiconductor package
US9431327B2 (en)	2014-05-30	2016-08-30	Delta Electronics, Inc.	Semiconductor device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR940007757Y1 (en) *	1991-11-14	1994-10-24	금성일렉트론 주식회사	Semiconductor package
US5530284A (en) *	1995-03-06	1996-06-25	Motorola, Inc.	Semiconductor leadframe structure compatible with differing bond wire materials
JPH09312367A (en) *	1996-05-23	1997-12-02	Mitsubishi Electric Corp	High frequency semiconductor device
DE69832359T2 (en) *	1997-07-19	2006-08-03	Koninklijke Philips Electronics N.V.	SEMICONDUCTOR DEVICE ARRANGEMENT AND CIRCUITS
US6249041B1 (en) *	1998-06-02	2001-06-19	Siliconix Incorporated	IC chip package with directly connected leads
JP3539549B2 (en) *	1999-09-20	2004-07-07	シャープ株式会社	Semiconductor device
JP2002217416A (en) *	2001-01-16	2002-08-02	Hitachi Ltd	Semiconductor device
US6593622B2 (en) *	2001-05-02	2003-07-15	International Rectifier Corporation	Power mosfet with integrated drivers in a common package
US7088074B2 (en) *	2002-01-02	2006-08-08	International Business Machines Corporation	System level device for battery and integrated circuit integration
US7183616B2 (en) *	2002-03-31	2007-02-27	Alpha & Omega Semiconductor, Ltd.	High speed switching MOSFETS using multi-parallel die packages with/without special leadframes
US6841852B2 (en) *	2002-07-02	2005-01-11	Leeshawn Luo	Integrated circuit package for semiconductor devices with improved electric resistance and inductance
US6777800B2 (en) *	2002-09-30	2004-08-17	Fairchild Semiconductor Corporation	Semiconductor die package including drain clip
US7215012B2 (en) *	2003-01-03	2007-05-08	Gem Services, Inc.	Space-efficient package for laterally conducting device
JP4115882B2 (en) *	2003-05-14	2008-07-09	株式会社ルネサステクノロジ	Semiconductor device
JP3789443B2 (en) *	2003-09-01	2006-06-21	Ｎｅｃエレクトロニクス株式会社	Resin-sealed semiconductor device
US7250672B2 (en) *	2003-11-13	2007-07-31	International Rectifier Corporation	Dual semiconductor die package with reverse lead form
US7898092B2 (en) *	2007-11-21	2011-03-01	Alpha & Omega Semiconductor,	Stacked-die package for battery power management
US7612439B2 (en) *	2005-12-22	2009-11-03	Alpha And Omega Semiconductor Limited	Semiconductor package having improved thermal performance
US7511361B2 (en) *	2005-01-05	2009-03-31	Xiaotian Zhang	DFN semiconductor package having reduced electrical resistance
US7884454B2 (en) *	2005-01-05	2011-02-08	Alpha & Omega Semiconductor, Ltd	Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
US7838977B2 (en) *	2005-09-07	2010-11-23	Alpha & Omega Semiconductor, Ltd.	Packages for electronic devices implemented with laminated board with a top and a bottom patterned metal layers
US7776746B2 (en) *	2007-02-28	2010-08-17	Alpha And Omega Semiconductor Incorporated	Method and apparatus for ultra thin wafer backside processing
US20080242052A1 (en) *	2007-03-30	2008-10-02	Tao Feng	Method of forming ultra thin chips of power devices
US8048775B2 (en) *	2007-07-20	2011-11-01	Alpha And Omega Semiconductor Incorporated	Process of forming ultra thin wafers having an edge support ring

2005
- 2005-01-05 US US11/029,653 patent/US20060145312A1/en not_active Abandoned
- 2005-12-23 TW TW094146213A patent/TWI340452B/en active
2006
- 2006-01-05 CN CN200680001453XA patent/CN101091247B/en not_active Expired - Lifetime
- 2006-01-05 WO PCT/US2006/000356 patent/WO2006074312A2/en not_active Ceased

Also Published As

Publication number	Publication date
US20060145312A1 (en)	2006-07-06
CN101091247B (en)	2010-07-14
WO2006074312A2 (en)	2006-07-13
TW200639994A (en)	2006-11-16
WO2006074312A3 (en)	2006-11-09
CN101091247A (en)	2007-12-19

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