TWI238591B - Power supply capable of providing stable procedure-controlled power output - Google Patents
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1238591 五、發明說明Q) ''" ---- 發明所屬之技術領域: 本=明係一種可提供穩定程序控制電源輸出之電源供 二―曰種藉由將箝制電路(Clamping Circuit)與變 二大側相連接,使金氧半場效電晶體在〇ff狀態時, =·所承受之高壓,可透過該箝制電路(clamping circuit)得以先行箝制,使得金氧半場效電晶體承受之高 電壓降低,以增加金氧半場效電晶體之可靠度。 先前技術: 按’一般待測物廣泛使用交換式電源供應器 (swi tching power supply )提供所需電源,在傳統上提 供待測物所需之電源供應器多是用線性式電源供應器。線 性式電源供應器常用於可提供定電壓或定電流的電源供應 器中’並且提供如低漣波雜訊(L〇w ripple noise)、低 、避干援、L ο ϊ; Ε Μ I )、良好滿節特.性與容易控制等多項 優點。雖然線性式電源供應器已在市場上廣為一般使用者 所接受,但它仍有一些缺點,如:功率損耗大與電源效率 低。再者,由於電源供應器的體積龐大且效率不高,因此 利用父換式技術(switching-mode technique)來製作電 源供應器已成為必然之趨勢,並以此提供電源密度和電源 效率。 傳統的交換式電源供應器,請參閱第1圖所示,係利 用迴路的導通及戴止反覆變化時,將輸入電壓整流濾波後 之直流電壓做一定的頻率切換,其結果再加以濾波,即可1238591 V. Description of the invention Q) '' " ---- Technical field to which the invention belongs: This = Ming is a kind of power supply that can provide stable program control power output for two kinds-by means of the clamping circuit (Clamping Circuit) and The two large sides are connected, so that when the metal-oxide-semiconductor half-field-effect transistor is in the 0ff state, the high voltage that it can withstand can be clamped in advance by the clamping circuit, so that the metal-oxide-semiconductor half-field effect transistor can withstand the high voltage. The voltage is reduced to increase the reliability of the metal-oxide half-field effect transistor. Prior technology: According to the general test object, a switching power supply is widely used to provide the required power. Traditionally, the power supply required to provide the test object is mostly a linear power supply. Linear power supplies are often used in power supplies that can provide a constant voltage or current, and provide low ripple noise (low ripple noise), low, avoid interference, L ο ϊ; Ε Μ I) , Good full knot characteristics, easy to control and many other advantages. Although the linear power supply has been widely accepted by the general user in the market, it still has some disadvantages, such as large power loss and low power efficiency. Furthermore, due to the large size and low efficiency of power supplies, it has become an inevitable trend to use switching-mode techniques to make power supplies and to provide power density and power efficiency. The traditional switching power supply, as shown in Figure 1, uses the circuit's conduction and wear and tear to repeatedly change the DC voltage after the input voltage is rectified and filtered to a certain frequency, and the result is filtered, that is, can
1238591 五、發明說明(2) 得到一固定的輸出電壓,而非隨程序控制而變動之電壓輸 出。 一般而言,交換式電源供應器都是屬於高頻的電子裝 置,其工作頻率目前大部份處於20KHz至200 KHz之間。在 系統電路中,其功率開關,如電晶體或金氧半場效電晶體 (MOSFET),會工作於飽和(Saturation)與戴止(Cut o f f )之特性區域中。而傳統的線性式電源供應器通常使 用工作在線性區域的電晶體,用它來做變阻器,以調節不 穩定的輸入電壓。在這種型式的電路中,被動元件必須承 受隨負載而改變的電流,一旦輸入電壓發生變化或是負載 突然增加,則被動元件所消耗的功率也隨之變化或增加。 因此,整個系統損失之功率也隨之提高,而效率則隨之下 降。然而交換式電源供應器並非完全工作於線性區域之 中,所以,即使輸入電壓範圍變化甚廣、負載變化甚大, 仍可獲得比線性式電源供麾器更高之效率。 再者,請參照第2圖所示,其為返馳式(Flyback)電源 電路,由於它的變壓器又兼作輸出儲能電感使用,且次級 端僅需一個二極體D1,而C1主要係用來調整電源供應器的 功率因數,。 再者’由PW Μ 1C、Q1 'T1組成之p〇Wer stage,主要係 藉由PWM 1C控制Q1電子開關的導通與否,再配合次級側的 二極體D1和電容C 0,而得到DC電壓的輸出,惟因電晶體Q 1 導通時,變壓器T 1之初級側會有初級電流流過,不過由於 變壓器T1之初級側與二次側之極性係相反,使二極體D丨會1238591 V. Description of the invention (2) Obtain a fixed output voltage instead of a voltage output that varies with program control. Generally speaking, switching power supplies are high-frequency electronic devices, and their operating frequencies are currently between 20KHz and 200KHz. In the system circuit, its power switch, such as a transistor or metal-oxide-semiconductor field-effect transistor (MOSFET), will work in the characteristic region of saturation and cut off (fut). The traditional linear power supply usually uses a transistor that works in the linear region and uses it as a varistor to adjust the unstable input voltage. In this type of circuit, the passive component must bear the current that changes with the load. Once the input voltage changes or the load suddenly increases, the power consumed by the passive component changes or increases accordingly. As a result, the power lost to the entire system increases and the efficiency decreases. However, the switching power supply does not fully work in the linear region. Therefore, even if the input voltage range varies widely and the load varies greatly, it can still obtain higher efficiency than the linear power supply. Furthermore, please refer to Figure 2. It is a flyback power supply circuit. Because its transformer doubles as an output energy storage inductor, and only one diode D1 is required on the secondary side, and C1 is mainly Used to adjust the power factor of the power supply. Furthermore, the poWer stage consisting of PW M 1C and Q1 'T1 is mainly obtained by controlling the conduction of the Q1 electronic switch by PWM 1C, and then cooperating with the diode D1 and capacitor C 0 on the secondary side The output of DC voltage, but because the transistor Q 1 is on, there will be a primary current flowing on the primary side of the transformer T 1, but because the polarity of the primary side and the secondary side of the transformer T 1 is opposite, the diode D 丨
第6頁 1238591 五、發明說明(3) 被逆向偏壓,而無能量輸出,進而無法經回授電路來控制 PWM I C之開閉週期;更因電流皆儲存在變壓器叮1中,造成 變壓器T1之損耗大。 此外,該變壓器之初極或連接有一箝制電路 (C 1 am p i n g C i r c u i t ),以箝制經過電流之電壓,但由於初 級電流電壓較高,故會造成效率較原來低外,更因箝制電 路(Clamping Circuit)元件必須耐高壓,所以成本較一般 高。 請參照第3圖所示,其為順向式(F 〇 r w a r d)電源電路, 其與返馳式電路的主要差別在於Power s t age的次級側部 分,順向式多用了一個肖特基二級體和電感,當Q 1截止 時,隔離變壓器T1之繞組上的電壓極性會反轉,使得D2二 極體變成逆向偏壓而不導通,而D3二級體則處於導通狀 態,此時負載端之能量,則由L 0和C 0所儲存的能量經由D 3 來供給。因此在顋向弍電路拓樸中;LG和C0除了作為低通 濾波器之外,亦為一儲能元件。在元件的採用上和 Flyback電路大同小異,然而由於在電晶體Q2關閉(OFF)時 來自T1初級側的反向電壓會和C0上的輸出電壓相累積而成 為兩倍的輸出電壓,故Q1的耐壓有高達800V以上,且該順 向式(Forward)電源電路雖可使流經變壓器初級側及次級 側的電流較小,因此變壓器的銅損小,但變壓器增加第三 繞組,進而增加成本。Page 6 1238591 V. Description of the invention (3) It is reverse biased and has no energy output, so it is impossible to control the opening and closing cycle of the PWM IC through the feedback circuit; moreover, the current is stored in the transformer Ding 1, causing the transformer T1. Large loss. In addition, the transformer may have a clamping circuit (C 1 am ping C ircuit) at the beginning of the transformer to clamp the voltage passing through the current, but because the primary current voltage is higher, the efficiency will be lower than the original, and the clamping circuit ( Clamping circuit) components must withstand high voltage, so the cost is higher than general. Please refer to Figure 3, which is a forward power circuit. The main difference from the flyback circuit is the secondary side of the Power st age. The forward type uses one Schottky II. The stage body and inductor, when Q 1 is turned off, the voltage polarity on the winding of the isolation transformer T1 will be reversed, so that the D2 diode body becomes reverse bias and does not conduct, while the D3 secondary body is in a conducting state, at this time the load The end energy is supplied by the energy stored in L 0 and C 0 through D 3. Therefore, in the topology of the 顋 direction 弍 circuit; LG and C0 are not only low-pass filters, but also an energy storage element. The use of components is similar to that of the Flyback circuit. However, since the reverse voltage from the primary side of T1 when transistor Q2 is turned OFF, the output voltage on C0 is accumulated and becomes twice the output voltage. It has a voltage of more than 800V, and although the forward power circuit can make the current flowing through the primary and secondary sides of the transformer smaller, the copper loss of the transformer is small, but the transformer adds a third winding, which increases the cost .
IHHI 1238591IHHI 1238591
五、發明說明(4) 發明内容: 發明人有鑑於前述傳統 入電壓發生變化或是負載突 功率也隨之變化或增加,造 提兩,而效率則隨之下降等 之製造經驗和技術累積,針 的方法,在經過不斷的研究 計出本發明之一種可提供穩 應器的發明,該電源供應器 制電路(Clamping Circuit) Circuit)可將金氧半場效電 感所產生之高電壓與瞬間儲 放’使得金氧半場效電晶體 氧半場效電晶體之可靠度。 的線性式電源供應器,一旦輸 然增加,則被動元件所消耗的 成整個系統損失之功率也隨之 缺點’乃依其從事電源供應器 對上述缺失悉心研究各種解決 實驗與改良後,終於開發設 定程序控制電源輸出之電源供 之變壓器二次側相連接有一箝 ,俾該箝制電路(Clamping 晶體OFF時因該變壓器磁漏電 存於該變壓器之能量得以釋 承受之高電壓降低,以增加金 本發明之一目的,係本發明之可提供穩定程序控制電 源輸出之電源供應器之直流輸出端設有一差動程序控制 I C ’俾透過該差動程序控制IC之比對功能,將直流輸出端 之輸出電壓與一預先設定之電壓/時間v (t)程序相比對, 並將比對後之差異經由一光揭合器(Opto Coupler)傳送到 一脈波寬度調節積體電路(PWM 1C),令該脈波寬度調節積 體電路依據此差異控制該電源供應器輸入端之一金氧半場 效電晶體(M0SFET )的切換(ON-OFF)負載週期,令調節流 入該電源供應器之一變壓器初級側之輸入電源的電流切換 (ON-OFF)時間,進而使該電源供應器之直流輸出端能提供V. Description of the invention (4) Summary of content: The inventor has accumulated manufacturing experience and technology in view of the aforementioned changes in the conventional input voltage or load sudden power changes or increases, and the efficiency decreases accordingly. The needle method, after continuous research, an invention of the invention that can provide a stabilizer, the power supply circuit (Clamping Circuit) circuit can be the high voltage and instantaneous storage The discharge 'makes the reliability of the oxygen half field effect transistor. Once the linear power supply is increased, the power consumed by the passive components to the entire system is also accompanied by the disadvantages. It is based on the research on the power supply to study the above-mentioned shortcomings and various solution experiments and improvements. A clamp is connected to the secondary side of the transformer for the power supplied by the program-controlled power supply. The clamp circuit (the high voltage that can be withstood due to the energy stored in the transformer due to the magnetic leakage of the transformer when the Clamping Crystal is OFF) increases the invention One purpose is to provide a differential program control IC at the DC output terminal of the power supply of the present invention that can provide stable program control power output. 俾 Through the comparison function of the differential program control IC, the output of the DC output terminal The voltage is compared with a preset voltage / time v (t) program, and the difference after the comparison is transmitted to a pulse width adjustment integrated circuit (PWM 1C) through an optical coupler (Opto Coupler), The pulse width adjustment integrated circuit is controlled to control a metal-oxide-semiconductor field-effect transistor (M0SFET) at the input end of the power supply according to the difference. ON (OFF) load cycle, so as to adjust the current switching (ON-OFF) time of the input power flowing into the primary side of one of the transformers of the power supply, so that the DC output of the power supply can provide
• I 1238591 fi、發明說明(5) " 一 ^ ---- 預先设定之程序控制穩定電流之輸出。 本發明之再一目的,係本發明之可提供穩定程序控制 電源輸出之電源供應器設有一分壓電路,該分壓電路與該 電源供應器輸入端整流/濾波電路之直流電源相連接,該" 分壓電路並連接至脈波寬度調節積體電路晶片輸入端,/俾 當施於OVRV之電壓因AC電源過高而超過設定值時,㈣”可 使金氧半場效電晶體關閉(〇f f暫停作業),而使該電源 供應器獲得保護,避免遭受高電壓之破壞,同時可提供變 壓器初級側驅動電路所需之偏壓電路。 本發明之另一目的,係本發明之可提供穩定程序控制 電源輸出之電源供應器設有一緩衝電路(Snubber Circuit),該緩衝電路(Snubber Circuit)與該金氧半場 效電晶體相連接,該緩衝電路(Snubber Circui t)可防止 因變壓器在金氧半場效電晶體關閉(SWITCH OFF )時,因 變赛器初鈒側電壓反向造成之脈衝高壓可能對金氧半場效 電晶體擊穿破壞,其工作原理為當金氧半場效電晶體〇FF 時,將變壓器初級側所產生之高壓脈?,藉由一電容充 電’而可以減緩瞬間產生的電壓變化,以保全金氧半場效 電晶體及減低磁波干擾訊號之產生;當金氧半場效電晶體 啟動(ON)時’該二極體呈順向偏壓原貯存於電容的能量因 經電容放電,將原本因為脈衝電流所貯存於電容能量消耗 掉。 /• I 1238591 fi, description of the invention (5) " a ^ ---- a preset program controls the output of stable current. Another object of the present invention is that the power supply of the present invention that can provide stable program-controlled power output is provided with a voltage dividing circuit, and the voltage dividing circuit is connected to a DC power source of a rectifier / filter circuit at the input end of the power supply. "The voltage divider circuit is connected to the input terminal of the pulse width adjustment integrated circuit chip. /" When the voltage applied to OVRV exceeds the set value due to the AC power being too high, "" can make the metal oxygen half field effect power The crystal is turned off (the operation is suspended), so that the power supply is protected from being damaged by high voltage, and at the same time, the bias circuit required for the primary drive circuit of the transformer can be provided. Another object of the present invention is to provide The invented power supply capable of providing stable program-controlled power output is provided with a snubber circuit. The snubber circuit is connected to the metal-oxide half field effect transistor. The snubber circuit can prevent the snubber circuit. When the transformer is turned off in the metal-oxide-semiconductor half-field-effect transistor, the pulse high voltage caused by the reverse of the voltage on the primary side of the transformer may affect the metal-oxide-semiconductor half-field effect transistor. Breakdown damage, its working principle is that when the metal oxide half field effect transistor 0FF, the high voltage pulse generated on the primary side of the transformer? By charging a capacitor, you can slow down the instantaneous voltage change to preserve the metal oxygen half field Effect transistor and reduce the generation of magnetic interference signals; when the metal oxide half field effect transistor is turned on (the diode is forward biased), the energy stored in the capacitor is discharged by the capacitor, and it is originally due to the pulse current. The energy stored in the capacitor is consumed.
1238591 五、發明說明(6) ' 賁施方式: 本發明係一種可提供穩定程序控制電源輸出之電源供 應器,請參閱第4、5圖所示,該電源供應器2〇主要包括有 一整流/減波電路2〗、一變壓器22 '一二次渡波電路以及 一直流輸出端24,其中該整流/濾波電路21連接至一市電 之交流(AC)電源31,利用其電容C2及電感u構成之全波 整流/遽波電路’將AC電源3 1予以整流及濾波,而獲得一 較穩定之直流電源,而該變壓器22連接至該整流/濾波電 路2 1 ’令其將整流及渡波後,並將程序控制切換電路調變 之交流電源降低其電壓值,經該二次濾波電路2 3之二次濾 波,由該直流輸出端24輸出直流電。 另,請參閱第4、5圖所示,該電源供應器20之直流輸 出端24與二次濾波電路23之間設有一差動程序控制IC25, 俾透過該差動程序控制I C2 5之比對功能,將直流輸出端24 i输出電壓與-顸先設定之電壓/時問V (t)程序控制相比 對,並將比對後之差異經由一光藕合器(Opto Coupler)26 傳送到一脈波寬度調節控制晶片(PWM IC ) 27,令該脈波 寬度調節控制晶片(PWM 1C ) 27依據此差異控制該整流/ 濾波電路2 1與該變壓器2 2間之一金氧半場效電晶體 (M0SFET ) 28的波形負載週期,令調節流入該變壓器22初 級側之輸入電源的電流切換(0N —OFF )比例,進而使該電源 供應器20之直流輸出端24能提供依原設定之電壓波形輸 在本發明中,復請參閱第4、5圖所示,該電源供應器1238591 V. Description of the invention (6) 'Method of implementation: The present invention is a power supply that can provide stable program-controlled power output. Please refer to Figures 4 and 5. The power supply 20 mainly includes a rectifier / Wave-reduction circuit 2], a transformer 22 ', a double-wave circuit, and a DC output terminal 24, wherein the rectification / filter circuit 21 is connected to an AC power source 31 of a city electricity, and the capacitor C2 and the inductor u are used to form the circuit. The full-wave rectification / sine wave circuit 'rectifies and filters the AC power supply 3 1 to obtain a more stable DC power supply, and the transformer 22 is connected to the rectification / filtering circuit 2 1' to cause it to rectify and cross-wave, and The AC power source modulated by the program-controlled switching circuit is reduced in its voltage value, and after the secondary filtering by the secondary filtering circuit 23, DC power is output from the DC output terminal 24. In addition, as shown in Figs. 4 and 5, a differential program control IC 25 is provided between the DC output terminal 24 and the secondary filter circuit 23 of the power supply 20, and the ratio of I C2 5 is controlled through the differential program. For the function, the output voltage of the DC output terminal 24 i is compared with the voltage / time V (t) program control set first, and the difference after the comparison is transmitted through an optical coupler (Opto Coupler) 26 To a pulse width adjustment control chip (PWM IC) 27, so that the pulse width adjustment control chip (PWM 1C) 27 controls one of the metal-oxide half field effect between the rectifier / filter circuit 2 1 and the transformer 2 2 according to the difference The waveform load period of the transistor (M0SFET) 28 adjusts the ratio of the current switching (0N-OFF) of the input power flowing into the primary side of the transformer 22, so that the DC output terminal 24 of the power supply 20 can provide the original setting. The voltage waveform is input in the present invention. Please refer to FIG. 4 and FIG. 5 for the power supply.
第10頁 1238591 五、發明說明(7) -一~〜 20成有分壓電路29’該分壓電路29與該電源供應器輸入 端的整流/濾波電路2 1相連接,該分壓電路2 9並連接至脈 波寬度調節控制晶片(PffM IC ) 27之〇VRV端,該分壓電路 2 9 I將整流/濾波電路2丨之DC電源電壓傳送至該脈波寬度 調節控制晶片(PWM 1C ) 27,俾當OVRV之電壓因AC電源過 尚,而使整流後之DC電壓超過設定值時,〇vrv可使金氧半 場效電晶體28關閉(〇f f ),而使該電源供應器2〇獲得保 護,避免遭受高電壓之破壞。 在本發明中,復請參閱第4、5圖所示,該電源供應器 20設有一緩衝電路(Snubber Circuit)210,該緩衝電路 (Snubber Circuit)210 由電容 C4、電阻R3、R1 及二極體 D3 (Diode)所組成,該緩衝電路(Snubber circuit)210與該 金氧半場效電晶體(M0SFET)28相連接,該緩衝電路 (Snubber Circuit )210可防止因變壓器22在金氧半場效電 晶體(M0SFET )28關閉(OFF )時,因電壓反向造成之脈衝 電流與高電壓;當金氧半場效電晶體(M0SFET) 2 8 OFF時, 此時二極體為逆向偏壓,將變壓器22初級側22b所產生之 高壓脈衝,藉由一電容C4充電,以吸收該脈衝電流;當金 氧半場效電晶體(MOSFET)28開啟(ON)時,該二極體D3呈順 向偏壓且該電容C4進行放電,將脈衝電流能量消耗掉,以 保全金氧半場效電晶體(M0SFET)28及減低電磁波(EMI )干 擾訊號之產生。 在本發明中,復請參閱第4 .、5圖所示,該電源供應器 2〇設有一箝制電路((:1311^11^(^1^1^1:)211,藉由變壓器Page 10 1238591 V. Description of the invention (7)-One ~~ 20% has a voltage divider circuit 29 ', the voltage divider circuit 29 is connected to the rectifier / filter circuit 21 at the input end of the power supply, and the voltage divider The circuit 2 9 is connected to the pulse width adjustment control chip (PffM IC) 27, VRV terminal. The voltage dividing circuit 2 9 I transmits the DC power supply voltage of the rectification / filter circuit 2 丨 to the pulse width adjustment control chip. (PWM 1C) 27. When the voltage of OVRV is too high due to AC power, and the rectified DC voltage exceeds the set value, 0vrv can turn off the metal-oxide half field effect transistor 28 (0ff), so that the power supply The power supply 20 is protected from high voltage damage. In the present invention, please refer to FIG. 4 and FIG. 5. The power supply 20 is provided with a snubber circuit 210. The snubber circuit 210 is composed of a capacitor C4, resistors R3, R1, and a two-pole. It is composed of body D3 (Diode). The snubber circuit 210 is connected to the metal oxide half field effect transistor (MOSFET) 28. The snubber circuit 210 can prevent the transformer 22 When the crystal (M0SFET) 28 is turned off (OFF), the pulse current and high voltage caused by the voltage inversion; when the metal oxide half field effect transistor (M0SFET) 2 8 is OFF, the diode is reverse biased at this time, the transformer 22 The high-voltage pulse generated by the primary side 22b is charged by a capacitor C4 to absorb the pulse current; when the metal-oxide-semiconductor field-effect transistor (MOSFET) 28 is turned on, the diode D3 is forward biased In addition, the capacitor C4 is discharged, and the pulse current energy is consumed to protect the metal-oxide-semiconductor field-effect transistor (MOSFET) 28 and reduce the generation of electromagnetic wave (EMI) interference signals. In the present invention, please refer to FIG. 4 and FIG. 5 again, the power supply 20 is provided with a clamping circuit ((: 1311 ^ 11 ^ (^ 1 ^ 1 ^ 1:) 211) through a transformer
第11頁 1238591 五、發明說明(8) 交鏈,該箝制電路(Clamping Circuit)211與談够 壓器22之二次側相以,俾該籍制電路(ciaroping與切Page 11 1238591 V. Description of the invention (8) Cross-linking, the clamping circuit (211) and the secondary side of the voltage regulator (22) are compared, so the circuit (ciaroping and cutting)
Ci=cui t)21 1可將金氧半場效電晶體28〇Fft時產生之高 因=變壓器22磁漏、電感產生與儲存於該變壓器以藉 通交鏈之立即反應而將能量釋放,使得金氧半場效電 28承受之高電壓降低,以增加金氧半場效電晶體“之 度。 4 * 在本發明中,復請參閱第4、5圖所示,該箝制電路 (Clamping Circuit)211之能量釋放方式,係在金氧半 效電晶體28 OF F時,其一二極體由原先之逆向偏壓變成順 向’而稽納二極體(Zener Diodes)則為逆向偏壓,使得其 能在超過逆向額定參考電壓時,稽納二極體(Zener 八Ci = cui t) 21 1 The high factor generated when the metal-oxide half field-effect transistor is 28 ° Fft = magnetic leakage and inductance generated by the transformer 22 and stored in the transformer to release the energy by the immediate reaction through the cross-link, so that The high voltage experienced by the metal-oxide half-field effect 28 is reduced to increase the degree of the metal-oxide half-field effect transistor. 4 * In the present invention, please refer to FIG. 4 and FIG. 5. The clamping circuit 211 The energy release method is that when the metal oxide semi-effect transistor 28 OF F, one of its diodes is changed from the original reverse bias to the forward direction, and the Zener Diodes are reverse biased, so that When it exceeds the reverse rated reference voltage, the Zener diode
Diodes)自身放電而將能量釋放及消除,同時,可以免除 變壓器22產生飽和。 ” 在本發明中,復請參閲第4、5圖所示,該變壓器22之 初級側之a端接到該整流/濾波電路2 1之後的正端,而整流 後之負端接到共同地端。 在本發明中,復請參閱第4、5圖所示,該變壓器22之 初級側之22b端接到金氧半場效電晶體(M0SFET) 28之沒極 (Drain),而金氧半場效電晶體28主要作用在於將直流電 壓截波。 在本發明中,復請參閱第4、5圖所示,該變壓器22之 次級側接到該二次濾波電路2 3,該二次濾波電路2 3包含一 二極體(Diode)30及一濾波電容32。Diodes) self-discharge to release and eliminate energy, and at the same time, avoid the transformer 22 from being saturated. In the present invention, please refer to FIG. 4 and FIG. 5. The a terminal of the primary side of the transformer 22 is connected to the positive terminal after the rectification / filter circuit 21, and the negative terminal of the rectified circuit is connected to the common terminal. In the present invention, please refer to FIG. 4 and FIG. 5, the primary side 22b of the transformer 22 is connected to the Drain of the metal oxide half field effect transistor (MOSFET) 28, and the metal oxide The main effect of the half field effect transistor 28 is to intercept the DC voltage. In the present invention, please refer to FIG. 4 and FIG. 5, the secondary side of the transformer 22 is connected to the secondary filter circuit 23, and the secondary The filter circuit 23 includes a diode 30 and a filter capacitor 32.
第12頁 1238591 五、發明說明(9) 在本發明中,復請參閱第4、5圖所示,該脈波寬度調 節控制晶片(PWM 1C) 27之驅動電力,是由該.整流/濾波 電路21透過降壓及穩壓電路電阻R12 、電容C7及稽納二 極體(Zener Diodes)Zl所提供,使輸入該脈波寬度調節控 制晶片(PWM 1C) 27之驅動電力的電壓Vcc保持恆定並持 績。 在本發明中,復請參閱第4、5圖所示,該脈波寬度調 郎控制晶片(PWM 1C) 27係藉由電阻R5固定其頻率。 在本發明中,復請參閱第4、5圖所示,輪入AC電壓之 過電壓保護是由電阻Rll(a、b)、電容C1及電阻R12所構成 之分壓電路29,經電阻Rlla'Rllb之連接點之電壓接至該 脈波寬度調節積體電路(PWM 1C ) 27之OVRV所控制,俾當 OVRV之電壓因AC電源31過高而超過設定值時,OVRV可使金 氧半場效電晶體(MOSFET ) 28關閉(SWITCH OFF ),而使 該電源供應器20獲得保護。 在本發明中,復請參閱第4、5圖所示,脈波寬度調節 控制晶片(PWM 1C ) 27上之PDRV及NDRV透過電阻R1 〇a、 R 10b將脈波寬度調節控制晶片(PWM 1C ) 27之ON、OFF電 壓波形上升及下降斜率控制,並將脈波寬度調節積體電路 (PWM 1C) 27訊號輸出至金氧半場效電晶體(M0SFET)28之 閘極,使通過源極(Source)到沒極(Drain)及該變壓器22 初級側之電流受到閘極電壓信號之控制。 在本發明中,復請參閱第4、5圖所示,通過金氧半場 效電晶體(M0SFET)28之電流,流經電阻R4產生之偏壓輸入Page 121238591 V. Description of the invention (9) In the present invention, please refer to FIG. 4 and FIG. 5. The driving power of the pulse width adjustment control chip (PWM 1C) 27 is rectified / filtered. The circuit 21 provides the voltage Vcc of the driving power input to the PWM control chip (PWM 1C) 27 through the step-down and voltage stabilizing circuit resistor R12, capacitor C7 and Zener Diodes Zl. And holding results. In the present invention, please refer to FIG. 4 and FIG. 5. The pulse width control chip (PWM 1C) 27 is fixed in frequency by a resistor R5. In the present invention, please refer to FIG. 4 and FIG. 5 again. The over-voltage protection of the AC voltage in turn is a voltage dividing circuit 29 composed of a resistor Rll (a, b), a capacitor C1, and a resistor R12. The voltage at the connection point of Rlla'Rllb is connected to the pulse width adjustment integrated circuit (PWM 1C) 27 controlled by OVRV. 俾 When the voltage of OVRV exceeds the set value because the AC power supply 31 is too high, OVRV can make gold oxygen The half field effect transistor (MOSFET) 28 is turned off (SWITCH OFF), so that the power supply 20 is protected. In the present invention, please refer to FIG. 4 and FIG. 5. The PDRV and NDRV on the pulse width adjustment control chip (PWM 1C) 27 pass the resistors R1 〇a and R 10b to the pulse width adjustment control chip (PWM 1C ) 27 ON and OFF voltage waveform rising and falling slope control, and the pulse width adjustment integrated circuit (PWM 1C) 27 signal is output to the gate of the metal oxide semiconductor field effect transistor (M0SFET) 28, so that the source ( The current from Source to Drain and the primary side of the transformer 22 is controlled by the gate voltage signal. In the present invention, please refer to FIG. 4 and FIG. 5. The bias current generated by the current through the metal-oxide-semiconductor field-effect transistor (M0SFET) 28 flows through the resistor R4.
第13頁 1238591 五、發明說明(ίο) 至脈波寬度調節控制晶片(PWM IC ) 2 7之電流偵測端 ILMT,由ILMT預設之容許電壓值使脈波寬度調節控制晶片 2 7產生過電流保護之功能,以避免金氧半場效電晶體 (MOSFET)28及變壓器22負載電流過大。 在本發明中,復請參閱第4、5圖所示,該變壓器22可 以為一環型變壓器,令其具有增加磁能轉換效率、減少磁 漏之優點。Page 13 1235991 V. Description of the invention (ίο) To the current detection terminal ILMT of the pulse width adjustment control chip (PWM IC) 2 7. The pulse width adjustment control chip 2 7 is generated by the allowable voltage value preset by the ILMT. The current protection function prevents the load current of the metal oxide half field effect transistor (MOSFET) 28 and the transformer 22 from being too large. In the present invention, please refer to FIGS. 4 and 5 again, the transformer 22 may be a toroidal transformer, which has the advantages of increasing magnetic energy conversion efficiency and reducing magnetic leakage.
以上所述,僅為本發明最佳具體實施例,惟本發明之 構造特徵並不侷限於此,任何熟悉該項技藝者在本發明領 域内,可輕易思及之變化或修飾及減少部分電路功能 ,皆可涵蓋在以下本案之專利範圍。The above description is only the best embodiment of the present invention, but the structural features of the present invention are not limited to this. Any person skilled in the art can easily consider changes or modifications and reduce some circuits in the field of the present invention. The functions can be covered by the patent scope of the following case.
第14頁Page 14
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| Application Number | Priority Date | Filing Date | Title |
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| TW92130633A TWI238591B (en) | 2003-11-03 | 2003-11-03 | Power supply capable of providing stable procedure-controlled power output |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92130633A TWI238591B (en) | 2003-11-03 | 2003-11-03 | Power supply capable of providing stable procedure-controlled power output |
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| TW200516836A TW200516836A (en) | 2005-05-16 |
| TWI238591B true TWI238591B (en) | 2005-08-21 |
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| TWI398758B (en) * | 2009-01-14 | 2013-06-11 | Lite On Electronics Guangzhou | Intelligent clamping circuit and power supply with this clamping circuit |
| TW201027896A (en) * | 2009-01-14 | 2010-07-16 | Inno Tech Co Ltd | A signal converter and the method thereof |
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