TWI236409B - Method for cutting wafer-grade package - Google Patents

Abstract

The present invention provides a method for cutting a wafer-grade package, which is used to cut a wafer-grade package structure combined with a wafer and a transparent substrate, in which the wafer and the transparent substrate are mounted with a plurality of corresponding sensing units and transparent units. Firstly, the transparent units are used as cutting units to form a plurality of criss-crossed V-shaped chip scribe lines on the surface of the transparent substrate. Next, a tool traverses in each V-shaped chip scribe line and applies a force thereon in order to break the transparent substrate into units of the transparent units. Finally, the sensing units are used as units to perform a cutting operation on the wafer. Furthermore, the wafer-grade package structure is cut into a plurality of package components. Thus, the present invention not only can achieve the advantages of rapid cutting and increased productivity, but also has the advantages, such as high reliability, high yield, reduced cost on wearing of tool, etc.

Description

1236409 V. Description of the invention (1) [K technique to which the invention belongs The present invention relates to a method. [Considering the fields of previous technologies] A cutting method in wafer-level packaging technology, wafer-level packaging and cutting techniques with special production efficiency and yield] Press, optically sense a sensing chip, which has a high sensitivity and the same Simple and easy to develop, a wafer 10 is provided as shown in the picture of the various crystals. The wafer 12 is then diced. However, the wafer 10 is hard. Known 18, 18, and the wafer is cut. The 16 ° wafer is larger than the wafer. Existing resin drills are less than about 15. A ball of glass will be used to cut the round-shaped M and the size will be m > Formula f. ¥ 20 is packed in two round-cuts, so the encapsulation glass cutting stone knife is 0 centimeters per second. The packaging structure of components such as image sensors usually includes a glass cover on the test chip. In order to meet the requirements of ensuring the high cleanliness of the sensor chip during the manufacturing process, a round-by-round packaging method is used. At present, the wafer-level packaging method generally used is to first prepare a plurality of sensing units on the wafer 10, and the substrate 14 is glued on the wafer 10, and then the packaging structure is divided into a plurality of packaging units 16. But facing the cutting problem, because the glass substrate 14 and the crystal must be divided into two cutting processes to advance the first glass cutting lane on the glass substrate 14-packaging unit 16 glass removal, in order to follow In the cutting process of 10 wafers to separate these packaging unit structures, due to the hardness of glass, the cutting efficiency is mainly divided into three main ways. The first method is to make the line high. Rotating speed cutting, the cutting speed is extremely slow, but the technology is more mature; the second method is to use thunder i

Page 5 1236409 V. Explanation of the invention (2) Although the cutting speed can be as high as 300 cm / sec, the energy of the laser beam will affect the sensing area on the wafer and is rarely used; the third method is used A diamond scriber draws a score line on the glass surface, and then breaks the glass to split it. The cutting speed is about 50 to 300 cm / s, but due to the problem of glass chipping, and it is only applicable to non-stick There is a glass body with a wafer, so this method is not suitable for glass cutting of wafer-level packaging. Therefore, in the glass cutting technology of the wafer-level package, the local speed grinding and cutting method of the tree blade is still mainly used; however, the high speed grinding and cutting method of the resin blade has the slower cutting speed in addition to the aforementioned. In addition, as shown in the first figure, the glass sand 22 produced by the south speed grinding will impact the wafer 10 at a high speed, which will cause the plating surface of the wafer to peel (Paling) ° and be damaged. Characteristics and greatly reduce reliability; in addition, resin blades also have the problem of tool cost of acoustic wear and deformation. In view of this, the present invention is directed to the above-mentioned problems, and proposes a p-cutting method for wafer-level packaging to effectively overcome these known shortcomings. [Summary of the Invention] The method of the present invention, in order to achieve the main purpose, is to provide a wafer-level package cutting f knife cutting fast and effectively improve the efficiency of production efficiency. ° Fang Muben = Purpose 'is to provide a wafer-level package cutting report, the advantages of the same yield, and make the packaged unit after dicing | 1 reliability to improve the conventional cutting method And the question. The problem of Shi Jiegu's easy-to-understand wafer surface circuit Another object of the present invention is to select 4s. 7U ^ is for cutting a wafer-level package

1236409 V. Description of the invention (3) Method ′ Because it does not use resin diamond blades for high-speed grinding and cutting for cutting transparent substrates, it can effectively save the cost of tool wear. In order to achieve the above-mentioned object, the wafer-level package cutting method of the present invention provides a wafer-level package structure, which includes a circle with a plurality of sensing units and a transparent substrate bonded to the wafer. And the transparent substrate is formed with a plurality of sun-moon units corresponding to the sensing units; then the B-day aluminum is determined, and an LL ^ Ming unit is a V-shaped notch with a wrong cut, so that the stress is along the etc. The transparent unit is a diced wafer, and furthermore, a plurality of vertical and horizontal lines are formed on the surface of the transparent substrate. A stress is applied in the female V-shaped notch scribe line, and each V-shaped notch scribe line is walked to make it transparent. The substrate is broken by the unit; finally, the sensing unit is cut and the wafer-level package structure is divided to form a plurality of packaged components. ~ The following is a detailed description with real-life examples and accompanying drawings. It will be easier to understand the purpose, technical content, features and effects of the present invention. 0 [Embodiment]% # This invention is used in transparent A V-shaped notch engraved line is made on the substrate, and the V-shaped notch is walked to the line while applying force to break the transparent substrate into a plurality of transparent units by using the stress concentration effect, and then the wafer is cut to quickly use the old Hao. The purpose of slicing and high yield σ means that the slicing method of the wafer-level package disclosed by the invention at the same time includes the following λ 1 *% * 丄 "— First, as shown in the third figure combined with the ' Provide a wafer-level package structure, which consists of a t-wafer 32 and a transparent substrate 34. Please also refer to the fourth and fifth figures, where the wafer 32 includes a plurality of sensing units ", the substrate 3 4 The material commonly used is glass or transparent plastic, and the transparent

1236409 V. Description of the invention (4) The substrate 34 is also formed with a plurality of transparent units 38 corresponding to the sensing units 36; In addition, a colloid 40 is provided between the transparent substrate 34 and the wafer 32 to penetrate the colloid 40 The bonding makes each transparent unit 38 and the sensing unit 36 corresponding to each other to form a sealed structure. Next, as shown in FIGS. 6A to 6C, the transparent substrate is cut. In this step, the transparent units 38 are used as cutting units, and the cutter is placed along every second transparent unit 38. Intermediate cutting paths 42, 42 are cut to remove the glass between every two transparent units 38. The detailed method is as follows. First, as shown in Figures 6A and 6B, use

Of: With 44 'along the cutting paths 42, 42, the V-shaped angle engraved on the surface of the transparent substrate 34 is smaller than a first sharp angle, and the cutter type 2 notch engraving line 46' The first sharp angle cutter 44 is open The hanging system is a diamond knife; then, as shown in FIG. Diamond knife, in this step Li = in: ^ -type notch 46 along the v-type notch t = =; =; = = The notch tip of the angle notch 46 is used as a response, which can be in advance With the second sharp-edged cutter :: ". To find the best for the transparent base to be completely broken: microscopic observation of the marks' in the cutting process of the transparent substrate 4 described above, use it for cutting. Ensure transparency Substrate 34 is completely cracked

After the Yuancheng transparent substrate 34 is cut, it continues as the seventh A to the seventh B

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In the figure, the wafer 32 is cut, and the wafer 32 is cut back, that is, the bottom surface of the wafer 32 is cut into the treasure. 丨 ^ ^, a ~ r coat to cut the crystal 0 3 2 . In detail, 乂 JlL m / sif IA ____ "The method is as follows: first set a fixed film 50 to encapsulate the wafer level, so as to cut the wafer 3 2 == 7A on the surface of the transparent substrate 34 The commonly used cover is tape; then as shown in Figure 7B, the junction f30 is turned over, so that the wafer 32 is located on the transparent substrate 34, and the sensor unit 36 is a unit, that is, along the cutting path & 2,

f. Leave the sensing unit 36 and cut the stone blade at two speeds. After completion of the dicing of the wafer 32 ', as shown in FIGS. 8A to 8C, the f-line transparent substrates 34 are separated. As shown in FIG./VIIA, a mucosa 54 is attached to the wafer, and the mucosa 54 is usually an expandable adhesive tape. The connection is as shown in the eighth figure B. # In addition to the fixed medium 50, the transparent substrate 34 after the material is cut: there is no basis for adhesion, and then by the action of stretching the mucosa, the transparent substrate 34 can be located in each The cutting material 56 between the two transparent units 38 automatically falls off due to its own gravity; finally, the mucosa 54 'is removed to complete the singulation operation of the wafer-level packaging structure 30 to obtain a plurality of packaging components as shown in FIG. 8c. 58 In the present invention, firstly, a cutter with a larger blade angle scribes a V-shaped notch engraving line on a transparent substrate, and then a cutter with a smaller blade angle walks along the V-shaped notch scribe line and simultaneously applies force to The stress concentration effect is used to completely break the transparent substrate, and then the wafer is cut. Unlike the conventional cutting method, which uses a diamond scriber to scribe and break the substrate, the present invention has no breaking action, so it can The circular package structure realizes diamond knife engraving to achieve the purpose of fast cutting.

1236409 V. Description of the invention (6) Therefore, the wafer-level package cutting method provided by the present invention can not only be used for cutting fast and effectively improve the productivity efficiency, but also has the advantages of high reliability and high yield to improve the conventional cutting The wafer surface of the method is problematic, and at the same time, tool wear costs can be saved. The above is an explanation of the features of the present invention through the examples. The purpose of the present invention is to familiarize the technology with the content of the present invention and implement it, rather than to determine the patent scope of the present invention. Modifications or amendments made by the spirit should still be included in the scope of the patent application as described below.

Brief description of the drawings Brief description of the drawings: The first diagram is a schematic diagram of the conventional g-round package structure. The second figure is the glass sand impact wafer produced by the conventional high-speed grinding. The third figure is a schematic view of the wafer-level package structure for cutting according to the present invention. t plan. The fourth diagram is a schematic diagram of the wafer in the third diagram. The fifth figure is a schematic view of the transparent substrate in the third figure. Figs. 6A to 6C are cross-sectional views showing the structure of each step of cutting the transparent substrate according to the present invention. Figures 7A to 7B are cross-sectional views showing the structure of each step of dicing a wafer according to the present invention. Figures 8A to 8C are sectional views of the structure of the present invention. Explanation of drawing numbers: Each step of separating the transparent substrate is shown. 1 2 sensing unit 16 packaging unit 2 Q wafer dicing track 3 2 wafer 3 6 sensing unit 4 (1 gel 44 first sharp corner cutter 48 second sharp corner Tool 5 2 cutting path 56 cutting waste

10 wafers 1 4 glass substrates 18, 18 'glass cutting lines 2 2 glass sand 3 〇 wafer-level packaging structure 34 transparent substrates 38 transparent single% 42, 42' cutting lines 46 V-shaped notch lines 50 fixed film 54 adhesive Qi

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Claims (1)

1236409 VI. Scope of patent application 1 · A dicing method for wafer-level packaging, including the following steps: A wafer-level packaging structure is provided, which includes a wafer with a plurality of sensing units and a wafer bonded to the wafer. A transparent substrate, and the transparent substrate is formed with a plurality of Doming units corresponding to the sensing units; using the transparent ρ elements as cutting units, a plurality of crisscross V-shaped notch lines are formed on the surface of the transparent substrate ; A stress is applied in the mother-the V-notch scribe line, and the stress is walked along each of the V-shaped notch scribe lines, so that the transparent substrate is cracked by the transparent units as a unit ^; The sensing car elements cut the wafer as a unit; and separating the transparent substrate to separate the transparent units, and then dividing the wafer-level packaging structure into a plurality of packaged components. 2 · The cutting method of the wafer-level package according to item 1 of the patent application scope, wherein the method of cutting the wafer is to cut the wafer from the lower surface of the wafer. 3. The cutting method of the wafer-level package according to item 1 of the scope of the patent application, wherein the v-shaped 4-corner scribe line is formed by using a first sharp-angled tool for scoring. 4 · The cutting method of the wafer-level package according to item 3 of the scope of patent application, wherein ‘the first sharp-angled knife is a diamond knife. 5. The method for cutting a wafer-level package as described in item 1 of the patent application g, wherein the step of applying a stress in the V-shaped notch scribe line is performed along a V-shape by a second sharp-angled tool. The notch is generated by walking, and the V-shaped included angle of the blade of the second sharp-edged tool is smaller than the v-shaped included angle of the v-shaped notch. Page 13 11 · The dicing method for wafer-level packaging as described in item 1 of the scope of patent application, wherein the method of cutting the wafer is diamond blade high-speed grinding and cutting. 1236409 VI. Scope of patent application 6 · The cutting method of the wafer-level package according to item 5 of the scope of patent application, wherein the second 1 sharp-angled knife is a diamond knife. 7 · Cutting method for wafer-level packaging as described in item 1 of Shenyan's patent scope ', wherein the step of cutting the wafer further includes the following steps: overlaying a fixed film on the transparent substrate, and placing the wafer The level packaging structure is turned over so that the wafer is located above the transparent substrate; and the wafer is cut in units of the sensing units. 8 · The dicing method of the wafer-level package according to item 7 of the patent application, wherein the fixing is a tape. 9 · The method for cutting a wafer-level package as described in the first item of the patent application, wherein the step of 'separating the substrate' further includes the following steps: placing a adhesive film on the wafer; removing the fixed shovel and Stretching the mucosa to remove the cutting residues between every two transparent units in the transparent substrate; and removing the mucous membrane. 1 0. The dicing method for a wafer-level package as described in item 9 of the scope of patent application, wherein the mucosa is a one having expandability. 1 2 · The method for cutting a wafer-level package as described in item 1 of the application scope, wherein the material of the transparent end plate is selected from one of glass and transparent plastic 0