TWI235631B - Surface insulation method for multi-layered chip-type ceramic over-voltage suppressor device - Google Patents
Surface insulation method for multi-layered chip-type ceramic over-voltage suppressor device Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 90
- 238000009413 insulation Methods 0.000 title claims abstract description 46
- 230000008569 process Effects 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims description 28
- 239000011521 glass Substances 0.000 claims description 16
- 230000000694 effects Effects 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 7
- 239000012774 insulation material Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 4
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- 241000283690 Bos taurus Species 0.000 claims 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 claims 1
- 244000046052 Phaseolus vulgaris Species 0.000 claims 1
- 208000005392 Spasm Diseases 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000005470 impregnation Methods 0.000 claims 1
- 239000010977 jade Substances 0.000 claims 1
- 239000012085 test solution Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 238000005476 soldering Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000007257 malfunction Effects 0.000 abstract 1
- 238000003672 processing method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 51
- 238000005245 sintering Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 14
- 239000011247 coating layer Substances 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000003466 welding Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 210000001161 mammalian embryo Anatomy 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005467 ceramic manufacturing process Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 210000002257 embryonic structure Anatomy 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- KIWTVBWYPCDBAZ-UHFFFAOYSA-N [Si]=O.[B].[Zn] Chemical compound [Si]=O.[B].[Zn] KIWTVBWYPCDBAZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- DMYHGDXADUDKCQ-UHFFFAOYSA-N fenazaquin Chemical compound C1=CC(C(C)(C)C)=CC=C1CCOC1=NC=NC2=CC=CC=C12 DMYHGDXADUDKCQ-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000000338 in vitro Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002345 surface coating layer Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
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Abstract
Description
1235631 五 、發明說明(1) 【發明所屬之技術領域】 本發明係關於一種多層式晶片型 件,特別是關於該元件表面光過電壓抑制益元 電極可庳用# # s g _ / ,使得該元件之端 」應用得統日日片型元件雷鍍掣 層焊接介面層,使端電極 的:端電極鍍上- 免陶瓷本體表面鍍上全屬m谇接特性’同時可避 至屬,而造成產品短路失效。 【先前技術】 近:來,隨著電子產品小熟、多 求下,電子線路之製作 』搞式之而 上需符人爭-二招:功能提升’電子元件不僅性能 ㉟格要* ’其與積體電路配合之高可靠性 基本需求。因此,本質上屬於保護 :壓抑制器,,更大的單位體積突波吸收能力力 適用電藶的方向發I,是必然的結果,另因電磁二乏之 jMj)及電磁相容性(EMC)之需求不,多層陶瓷過電壓抑制 裔逐,被大量運用於電腦資訊與通訊產品之電子電路上, 另在,傳輸速度、高頻寬、高組裝密度需求、以及符合防 制規範下,使得陶瓷過電壓抑制器不僅在材料研發方面更 上一層,而可與表面實裝(SMT)線路搭配之各式規格的晶 片化等技術更促使陶瓷過電壓抑制器產業發展,尤其是多 層陶究製程使晶片型陶瓷過電壓抑制器之設計及製作有更 寬廣的發展,如多層陶瓷製程中的電極共燒就涉及陶曼過 電壓抑制器之配方調整以降低燒結溫度、陶瓷過電壓抑制1235631 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a multi-layer wafer type, in particular, to the surface over-voltage suppression benefit element electrode of the element can use # # sg _ / to make the element "The end" is applied to the soldering interface layer of the Japanese and Japanese chip components. The terminal electrode is plated-the end surface of the ceramic body is completely coated. It is all m-connection characteristics. At the same time, it can be avoided. Product short-circuit failure. [Previous technology] Recently: As electronic products become more mature and more demanding, the production of electronic circuits needs to compete with others-two tricks: functional enhancements. Basic requirements for high reliability with integrated circuits. Therefore, it is essentially a protection: pressure suppressor, a larger unit volume surge absorption capacity is applied in the direction of electric shock, is an inevitable result, and due to the lack of electromagnetic jMj) and electromagnetic compatibility (EMC Multi-layer ceramic over-voltage suppression is not widely used in electronic circuits of computer information and communication products. In addition, the transmission speed, high frequency bandwidth, high assembly density requirements, and compliance with regulations prevent ceramics from passing. The voltage suppressor is not only one step higher in the development of materials, but also various technologies such as chip forming that can be used with surface-mounted (SMT) circuits have promoted the development of the ceramic overvoltage suppressor industry, especially the multi-layer ceramic manufacturing process. The design and production of ceramic overvoltage suppressors have developed more widely. For example, the co-firing of electrodes in the multilayer ceramic manufacturing process involves the adjustment of the formulation of the Taumann overvoltage suppressor to reduce the sintering temperature and ceramic overvoltage suppression.
1235631 五、發明說明(2) ::部份成分會與共燒之電極反應、以及調整組成後 特性的穩定性等均是極重要的課題。 - w =U、1BA1C圖所示之習知多層式晶片型陶瓷過電 堡抑制器,材料經陶曼生胚薄片製作、印刷堆疊、二電 燒結及端電極製作後’即形成包括:冑竟本體】 “ 之結構,f用以半導體性或低絕緣性材料為 層陶竞過電壓抑制器及其他晶片型電子元件的= 法2採用Ag、Ag-pd4Ag_pd_pt為端銀電極, 電子π件之端電極與系統電路機板易於焊接揍合,/使 该電子兀件應有之功能,大部分之電 么揮 作完成後,f以電鑛製程鍍上一層焊 電極製 曰丨取丄 滑杆接介面層,使端雷枚 ΐ導接=制然而,多層陶究過電壓抑制器為二 丰導體! 生材枓,電鍍製程中會將電鍍之金屬Μ、pb —S Sn鑛:陶兗本體上,使得該元件之或 品短路失效。 ^ < 守软產 傳統上解決上述問題的方法是使用含有貴重金屬 ,極材料,使端電極無須電鍍即具有可銲錫焊接的 =此種端電極之焊接性與可靠度仍然很難達㈣電^捏 接;I面層金屬相同的焊接品質與水準。 /、 Ά 此外,另有下列二種較重要之習用絕緣方法 =極可電鑛’且不會將電鍍之金屬鑛在陶兗本體上達士 將作法及問題點分述如下: 紙 ^歐^專利第釀m號之方法係將多層陶曼電子 泡於構酸鹽水溶液中,以本體之主成份氧化鋅被酸^容1235631 V. Description of the invention (2) :: Some components will react with the co-fired electrode, and the stability of the characteristics after adjusting the composition is an extremely important issue. -w = U, 1BA1C The conventional multilayer wafer-type ceramic over-electricity suppressor shown in the figure is made of Taoman green sheet, printed stacking, second electric sintering, and terminal electrode. "Structure, f using semiconductor or low-insulation material as a layer ceramic overvoltage suppressor and other chip-type electronic components = Method 2 uses Ag, Ag-pd4Ag_pd_pt as the terminal silver electrode, the terminal electrode of the electronic π part and The system circuit board is easy to be welded and combined, so that the electronic element should have the functions. After most of the electric wave is finished, f is plated with a welding electrode in the electro-mineral process. However, the multi-layer ceramic overvoltage suppressor is a Niyoto conductor! Raw materials: In the electroplating process, the electroplated metal M, pb —S Sn ore: On the ceramic body, make The short circuit of the component failed. ^ &S; Traditionally, the method to solve the above problems is to use precious metals and electrode materials, so that the terminal electrode does not need to be plated to have solderability. = The solderability of this type of terminal electrode and Reliability is still difficult ㈣Electric ^ pinch; I surface layer metal with the same welding quality and level. /, Ά In addition, there are two more important conventional insulation methods = extremely electric ore 'and will not be electroplated metal ore in ceramic 兖Dashi's practice and problems on the body are described as follows: The method of paper ^ Euro ^ Patent No. m is to soak multi-layer Taoman electrons in an aqueous solution of acid salt, and the main component of the body is zinc oxide to be acidified.
1235631 五、發明說明(3) 液溶解後, 上,形成絕 反應物濃度 亦造成製造 2·中華民國 端電極形成 製作之絕緣 覆,而降低 除電子元件 用也將限制 須低於絕緣 3 ·美國專利 成後,製作 接著再包覆 二次之端電 銀電極製作 雜性不利於 基於前 所欲解決之 與溶液反應生成磷酸鋅沉私# 緣之表面被覆,然此陶竟本體㈣ 、溫度及pH值等條件,且使用〜控:,谷液的 成本提高及環保問題。 後的廢溶液處理 專利第447775號之方法#於跑— 前,於陶究本體上被ί 是本體形成後, 層可能造成原先外露的内‘極、!層’然此方法 電子元件之效能與可電;端部被絕緣層包 兩端部絕緣層的程序,^卜3义須增加一道清 層材料可承受的溫度=電極之燒附溫度必 第6232867號之方法係於夕庶 第一&層陶竞電子元件形 第二-層玻璃絕緣層, 製造成本控制。處理私序’材料與製程之複 述問題及習知方法辦六士 問題所在。 +在之缺失,正是本發明 【發明内容] 陶瓷電子元件之端電極製作 層焊接介面層,使端電極具 《所欲解決之技術問題》 — 本發明主要在於解決多層 70成後’需以電鍍製程鍍上—1235631 V. Description of the invention (3) After the liquid is dissolved, the concentration of the reactant is also formed. 2 · The Republic of China terminal electrode is formed to produce the insulation cover. The reduction of the use of electronic components will also limit the insulation. 3 · United States After the patent is completed, the production and then coating of the secondary electric silver electrode is not conducive to the production of zinc phosphate based on the surface of the zinc coating. The pH value and other conditions, and the use of ~ :: increase the cost of cereal fluid and environmental issues. The method of treating the waste solution after the patent # 447775 # Before running — on the Tao body, after the body is formed, the layer may cause the inner exposed pole, which was originally exposed! The efficiency and electrical performance of the electronic components in this method; the end is covered by the insulation layer at both ends of the insulation layer procedure, ^ 3 meaning must be added a layer of clearing material can withstand the temperature = electrode burning temperature must be 6232867 The method is based on the first & ceramic electronic component-shaped second-layer glass insulation layer of Xixun, and the manufacturing cost is controlled. Dealing with the problem of retelling of private sequence ’materials and processes and how to know how to do it. + What is missing is the present invention. [Content of the invention] The soldering interface layer of the terminal electrode production layer of the ceramic electronic component, so that the terminal electrode has the "technical problem to be solved" — the present invention is mainly to solve the 70% of multilayers. Plating process plating—
12356311235631
有良好的焊接特性 性材料,電鍍製程 陶瓷本體上,使得 效的問題。 ’然而,多層陶瓷電 中會將電鍍之金屬Ni 元件之兩端電極導通 子元件為一半導體 ' Pb-Sn或Sn鑛在 ’導致產品短路失 《解決問題之技術手段》 > ,發明之技術手段主要是以玻璃、有機化合物、金屬 ^勿金類或其他高絕緣性材料塗佈於多層陶瓷過 二j抑制器本體表面上,經熱處理後,於陶瓷本體表面形 =一絕緣層,使得元件之端電極可應用傳統晶片型元件之Materials with good soldering properties, plating process on the ceramic body, make it problematic. 'However, in multilayer ceramics, the electrodes at both ends of the electroplated metallic Ni element will be connected to a semiconductor,' Pb-Sn or Sn ore ', which will cause the short circuit of the product. "Technical means to solve the problem" > The method is mainly coated on the surface of the multilayer ceramic suppressor body with glass, organic compounds, metals, or other highly insulating materials. After heat treatment, the shape of the surface of the ceramic body = an insulating layer, so that the component The terminal electrode can be applied to the traditional chip type components
^鍍製程,將端電極鍍上一層焊接介面層,使端電極具有 =好的焊接特性,同時可避免陶瓷本體表面於後續電鍍製 程中鍍上金屬,而造成產品短路失效,陶瓷本體表面塗佈 、、、邑緣層之製程可於陶瓷本體燒結前;或陶瓷本體燒結後、 端電極製作前;或陶瓷本體燒結及端電極製作後、電鍍前 實施。 此外’端電極製作前之陶瓷本體表面進行絕緣層塗佈 時/可能使原本外露的内電極端部因表面絕緣層阻隔,致 使後續製作之端電極無法與内電極電性導通,本發明之技 術手#又主要是應用浸餘法及熱處理法使内電極端部向外伸 展’以確保内電極與端電極形成良好的電性導通。 《對先前技術之功效》 相較於先前技術,本發明之絕緣方法具有以下優點·· 1 ·所形成之絕緣層不會限制端電極材料之選擇; 2·陶免本體表面具有平坦化的效果,可提高銲錫製程之後^ Plating process, the terminal electrode is plated with a welding interface layer, so that the terminal electrode has good welding characteristics, and at the same time, the surface of the ceramic body can be plated with metal in the subsequent electroplating process, which causes product short circuit failure and the coating of the ceramic body surface The process of forming the edge layer can be performed before the ceramic body is sintered; or after the ceramic body is sintered and before the terminal electrode is manufactured; or after the ceramic body is sintered and the terminal electrode is manufactured and before the electroplating. In addition, when the insulating layer is coated on the surface of the ceramic body before the terminal electrode is manufactured, the exposed end of the internal electrode may be blocked by the surface insulating layer, so that the terminal electrode produced later cannot be electrically connected with the internal electrode. The technology of the present invention The hand # is mainly to apply an immersion method and a heat treatment method to extend the end of the internal electrode outward to ensure that the internal electrode and the terminal electrode form a good electrical conduction. "Effect on the prior art" Compared with the prior art, the insulation method of the present invention has the following advantages: · 1 · The formed insulating layer does not limit the choice of terminal electrode materials; 2 · The surface of the ceramic body has a flattening effect Can improve after soldering process
第8頁 1235631 五、發明說明(5) 助録劑的清洗效果,避免因助銲劑殘留而提升漏電流,、告 成產品失效; 3·本發明之内電極端部向外伸展之方法,可確保内電極血 端電極形成良好的電性導通’不需增加元件兩端部絕_ 之清除製程; 曰 4·陶瓷本體表面絕緣層之熱處理製程可和端電極之燒附制 程合併實施,亦可和陶瓷本體之燒結製程合併實施二衣 【實施方 本發 屬鹽類或 本體表面 層,使得 程,將端 焊接特性 上金屬, 陶瓷本體 陶瓷本體 極製作後 一、陶瓷 將尚 有機化合 料,厚度 半導體性 式】 氧化物、金 電壓抑制器 形成一絕緣 之電鍍製 具有良好的 鍵製程中鑛 短路失效, 燒結前;或 燒結及端電 如下: 一層玻璃、 絕緣性材 燒結後之 明主要是以玻璃、有機化合物、金屬 其他高絕聲J生材料塗佈於多層陶瓷過 上,經後,於陶瓷本體表面上 元件之端電極可應用傳統晶片型元件 電極鍍上一層焊接介面層,使端電極 ,同時可避免陶瓷本體表面於後續電 使得元件之兩端電極導通,導致產口 表面塗佈絕緣層之製程可於陶瓷本體 燒結後、端電極製作前;或陶瓷本體 、電鍍前實施,其具體實施方法詳述 本體燒結前塗佈絕緣層 未燒結的多層陶瓷生胚整體表面塗佈 物、金屬氧化物、金屬鹽類或其他高 約1〜100 /zm,然後再進行燒結製程 陶瓷本體表面即形成一層絕緣層。Page 8 1235631 V. Description of the invention (5) The cleaning effect of the recording aid, avoiding the leakage current caused by the flux residue, and the failure of the finished product; 3. The method of extending the inner electrode end outwardly according to the present invention can ensure The internal electrode blood end electrode forms a good electrical continuity without the need to increase the removal process of the two ends of the component; said 4. The heat treatment process of the surface insulation layer of the ceramic body can be combined with the end electrode firing process, and can also be combined with The sintering process of the ceramic body is combined and implemented. [The implementation method is a salt or body surface layer, so that the end welding characteristics are metallized. After the ceramic body and the ceramic body pole are manufactured, the ceramic will still be organically compounded. The thickness is semi-conductive. ] The oxide and gold voltage suppressors form an insulated electroplating system with good bonding short-circuit failure during ore sintering, before sintering; or sintering and termination of electricity as follows: A layer of glass, insulating material after sintering is mainly glass, organic Compounds, metals and other high-insulation materials are coated on the multilayer ceramics, and after that, the components are on the surface of the ceramic body The terminal electrode can be coated with a soldering interface layer on the traditional chip-type component electrode to make the terminal electrode, and at the same time avoid the subsequent electrical conduction of the ceramic body surface to make the two electrodes of the component conductive, resulting in the process of coating the surface with an insulating layer on the ceramic. After the body is sintered and before the terminal electrode is manufactured; or the ceramic body is applied before the electroplating, the specific implementation method details the uncoated multilayer ceramic green embryo overall surface coating, metal oxide, and metal salts before the body is sintered. Or another 1 ~ 100 / zm high, and then a sintering process to form an insulating layer on the surface of the ceramic body.
第9頁 1235631 五、發明說明(6) 一、陶兗本 將燒結 璃、有機化 材料,厚度 半導體性陶 三、陶瓷本 多層陶 前,於元件 化物、金屬 經熱處理後 佈材料反應 理過程中溶 製程、以及 體燒結後 後、端電 合物、金 約1〜2 0 0 瓷材料與 體燒結及 瓷元件完 整體表面 鹽類或其 ,陶瓷本 形成一絕 入或混入 電流導通 、端電極製作前塗佈絕緣層 極製作前之陶瓷本體表面塗佈一層玻 屬氧化物、金屬鹽類或其他高絕緣性 # m,經熱處理後,陶瓷本體表面之 表面塗佈材料反應形成一絕緣層。 端電極製作後、電鍍前塗佈絕緣層 成燒結製程及端電極製作後、電鍍之 塗=一層玻璃、有機化合物、金屬氧 他尚絕緣性材料,厚度約1〜5 〇 # m, 體表面之半導體性陶瓷材料與表面塗 緣層,端電極表面之塗佈材料於熱處 端電極金屬中,並不影響後續之電鍍 針對上述元件端 絕緣塗佈,可能使原 隔’致使後續製作之 此’需使内電極端部 成良好的電性導通, 有二: •陶瓷本體燒結後, 值及浸泡時間,使得 屬因較耐浸蝕,而形 2·内電極含有銀或銀 電極製作前之陶兗 本外露的内電極端 端電極無法與内電 向外伸展,以確保 本發明之内電極端 經酸或鹼液浸泡, 陶究本體表面受浸 成内電極端部凸出 合金成份,於表面 本體六個表面進行 部因表面絕緣層阻 極電性導通,因 内電極與端電極形 部向外伸展之方法 控制酸或鹼液之pH 餘内縮,内電極金 於陶瓷本體外。 塗佈絕緣層及製作Page 9 of 1235631 V. Description of the invention (6) 1. Pottery will be sintered glass, organic materials, thickness semiconductor ceramics 3. Ceramics, multilayer ceramics, in the reaction process of component materials and metal after heat treatment of cloth materials After the melting process, and after the body is sintered, the terminal compound, gold is about 1 ~ 2 0, the ceramic material and the body are sintered, and the surface of the ceramic element is complete with salts or ceramics, which form an insulated or mixed current conducting terminal electrode. Coating the insulation layer before fabrication The surface of the ceramic body before fabrication is coated with a layer of vitreous oxide, metal salt or other high insulation #m. After heat treatment, the surface coating material on the surface of the ceramic body reacts to form an insulation layer. After the terminal electrode is manufactured, the insulating layer is coated to form a sintering process before the plating. After the terminal electrode is manufactured, the coating is plated = a layer of glass, organic compounds, and metal-oxygen and other insulating materials. The thickness is about 1 ~ 50 mm. The semi-conductive ceramic material and the surface coating edge layer, and the coating material on the surface of the terminal electrode are in the hot end electrode metal, which does not affect the subsequent electroplating of the above-mentioned component end insulation coating, which may cause the original barrier to 'make subsequent manufacturing this' Need to make the end of the internal electrode good electrical conduction, there are two: • After the ceramic body is sintered, the value and immersion time make it more resistant to erosion, the shape 2 · The internal electrode contains silver or the ceramic before the silver electrode is made The exposed internal electrode end electrode cannot extend outward with the internal electricity to ensure that the internal electrode end of the present invention is soaked with acid or alkali, and the surface of the body is immersed into an alloy component protruding from the end of the internal electrode on the surface body. The six surface conducting parts are electrically conductive due to the resistance of the surface insulating layer, and the internal electrode and the terminal electrode shape are extended outward to control the pH of the acid or alkaline solution. In vitro. Coating insulation layer and production
第10頁 五、發明說明(7) 端電極之後,再施以25〇。〇以上 銀因受到端電極中銀成份的牽引而向外伸展。電極之至屬 實施例: 上述大致說明本發明,以下將人 更詳細說明本發明,因M、隹】口具體的較佳實施例 1伞心明,因此可進一步了解本發明。 實施例一: 所示本二::於陶瓷本!燒結前塗佈絕緣層,如第2 A圖 二、 、里k陶瓷生胚薄片製作、印刷堆聂及切宝J成句 含陶瓷本體10盥内雷— 且及刀d成 別元件生胚# 土! 早一70件生胚等過程後,將個 與其表面塗佈層一起„〇"m,將元件生胚 用之燒結條件採用元件原本使 用之k、、口製私條件,燒社德BP游Α、,Μ 包含芦姓德$ _ 2 士 後即形成如弟Μ圖所示之結構, 竟本體表面材料於燒姓過程、及玻璃塗料層與陶 接签,#二从麂、^過転中反應生成的表面絕緣層60。 示,原本外::肉:部塗附端電極及燒附後,如第2C圖所 ’、” 路内電極22端部可能殘留少量玻璃塗料8〇, 而阻隔内電極22端部與端電極3 :==塗=, 需實施50(TC以上之埶_裡 &間的電性導通,因此, 電極32中之銀成二熱牵處引理而二電:22 ^ ^ 通,如第2D圖所示,若選擇;上:展’形成良好的電性導 製程使内電極22端部端電極材料’該熱處理 口卜1甲展的實施程序可和端電極的燒 1235631 五、發明說明(8) 附製程合併實施而得到相同的效果。 以上程序完成後,該元件可經由傳統晶片型元件之後 續電鍍製程而得到正常的電鍍效果,端電極之間的陶瓷本 體表面經絕緣處理後,不會鍍上金屬。 實施例二: 本實施例係於陶瓷本體燒結後、端電極製作前塗佈絕 緣層,材料經陶瓷生胚薄片製作、印刷堆疊、切割及燒結 後,即形成如第3A圖所示之結構,包含陶瓷本體△與 極22,將燒結後的元件塗佈一層主要成份為鋅—硼—矽之氧 化物混合塗料層,再實施50 0 t: s85(rCi熱處理,即形成 如第3B圖所示之結構,包含陶瓷本體12、内電極“及氧化 物混合塗料層與陶瓷本體表面材料於熱處理過程中反應生 成的表面絕緣層6 〇。 〜Page 10 V. Description of the invention (7) After the terminal electrode, apply 25 °. 〇 Above, silver is stretched out due to being pulled by the silver component in the terminal electrode. The embodiment of the electrode: The above generally describes the present invention, and the following will explain the present invention in more detail. Because the specific preferred embodiments of the M and H ports are clear, the present invention can be further understood. Example 1: The second book shown: In the ceramic book! Apply an insulating layer before sintering, as shown in Figure 2A, Fig. 2 and 3, making ceramic green embryo flakes, printing and stacking Nie and Qibao J. The sentence contains the ceramic body 10 internal mines — and the knife d into other components raw embryo # 土As early as 70 pieces of green embryos, etc., they will be combined with the surface coating layer 『〇 " m, and the sintering conditions for the green embryos of the components shall be the same as those used in the original components. You A, and M include Lu Xingde $ _ 2 after the formation of a structure as shown in the figure of the younger brother, the surface material of the body during the burning process, and the glass coating layer and pottery sign, # 二 从 鹿 、 ^ 过 転The surface insulation layer 60 formed by the intermediate reaction is shown in Fig. 2. After the end electrode is coated and burned, a small amount of glass coating 80 may remain on the end of the electrode 22 in the circuit, as shown in Figure 2C. To block the end of the internal electrode 22 and the terminal electrode 3: == coat =, it is necessary to implement electrical conduction between 50 (TC and above), so the silver in the electrode 32 is a lemma and two Electricity: 22 ^ ^ on, as shown in Figure 2D, if selected; Upper: Zhan 'to form a good electrical conductivity process so that the internal electrode 22 end electrode material It is expected that the implementation process of the heat treatment process 1A exhibition can be combined with the burning of the terminal electrode 1235631 V. Description of the invention (8) The combined process is implemented to obtain the same effect. After the above procedures are completed, the component can be passed through the traditional wafer-type component. The subsequent electroplating process has obtained the normal plating effect, and the surface of the ceramic body between the terminal electrodes will not be plated with metal after the insulation treatment. Example 2: This example is to apply insulation after the ceramic body is sintered and before the terminal electrode is manufactured. After the ceramic green sheet is made, printed, stacked, cut and sintered, the structure is formed as shown in Figure 3A, which includes the ceramic body △ and the pole 22. The sintered component is coated with a layer of zinc— Boron-silicon oxide mixed coating layer, and then subjected to 50 0 t: s85 (rCi heat treatment, to form the structure shown in Figure 3B, including the ceramic body 12, the internal electrode ", and the oxide mixed coating layer and the surface of the ceramic body The surface insulation layer 6 formed by the reaction of the material during the heat treatment process.
^: ’該元件端部塗附端電極及燒附後,如第3c圖所 二’原本外露的内電極22端部可能殘存少量氧化物混合塗 料80,而阻隔内電極22端部與端電極3〇之間的 因此,需實施500 t:以上之熱處理,内導I 受到端電極32中銀成份的牽引而向外伸展, 、好銀 性導通,如第3D圖所示,若選擇/成良好的電 處理製程使内電極22端部向; = = =材料’該熱 緣層熱處理及端電極之燒附製程::::;面絕 的效果。 ^ σ併貝轭而得到相同 以上程序完成後 該π件可經由傳統晶片型元件之後^: 'After the end electrode of this element is coated and fired, as shown in Figure 3c', a small amount of oxide mixed coating 80 may remain on the end of the internal electrode 22 that was originally exposed, and block the end of the internal electrode 22 from the terminal electrode. Therefore, it is necessary to perform 500 t: heat treatment above, the internal conduction I is pulled outward by the silver component in the terminal electrode 32, and the silver conduction is good, as shown in Figure 3D. The electrical processing process makes the end of the inner electrode 22 oriented; = = = Material 'The heat edge layer heat treatment and end electrode firing process ::::; The effect of surface insulation. ^ σ and yoke to get the same. After the above procedures are completed, the
12356311235631
端電極之間的陶瓷本 五、發明說明(9) 續電鑛製程而得到正常的電鍍效果, 體表面經絕緣處理後,不會錢上金屬 實施例三: 本:,例係於陶€本體燒結後、端電極製作 :即經陶曼生胚薄片製作、印刷堆疊“刀割及燒結 炼22,‘成如第4A圖所不之結構’包含陶瓷本體12與内電 ,、、、'後將該燒結後的70件浸泡於〇. 5%HC1水溶液中1分 :陶竞本體12受到浸餘而内縮,使得内電極2 :夕卜凸出,如第4B圖所示,其次,將處理後的元件塗佈一 層主要成份為辞-硼-矽之玻璃塗料層,接著實施5〇〇。〇至 7〇〇 C之熱處理,即形成如第4C圖所示之結構,包含陶 f體12、内電極22及玻璃塗料層與陶竟本體表面材料於埶 處理過程中反應生成的表面絕緣層6 〇。 ”、、 一接著,該元件端部塗附端電極及燒附後,如第4D圖所 不,原先已向外裸露的内電極22端部和端電極32之間具 良好的電導通特性,上述之表面絕緣層熱處理製程可^端 電極的燒附製程合併實施而得到相同的效果。 以上程序完成後,該元件可經由傳統晶片型元件之後 績電鍍製程而得到正常的電鍍效果,端電極之間的陶究本 體表面經絕緣處理後,不會鍍上金屬。 實施例四: 本實施例係於元件完成燒結製程及端電極製作後、電Ceramics between the terminal electrodes V. Description of the invention (9) The normal electroplating effect is obtained after the power ore process is continued. After the surface of the body is insulated, the metal will not be used. Example 3: This example is based on the ceramic body After sintering, the production of terminal electrodes: that is, through the production of Taoman green sheet, printing and stacking "knife cutting and sintering 22", 'to form a structure not shown in Figure 4A' includes ceramic body 12 and internal electricity, 70 pieces after sintering were immersed in 0.5% HC1 aqueous solution for 1 minute: Tao Jing body 12 was immersed and shrunk to make the internal electrode 2: Xibu protruding, as shown in FIG. 4B. Second, after the treatment, The element is coated with a glass coating layer whose main component is boro-silicon, and then subjected to a heat treatment of 50000 to 700C to form a structure as shown in FIG. 4C, which includes a ceramic body 12, The internal electrode 22, the glass coating layer, and the surface insulation layer 6 formed by the reaction of the surface material of the ceramic body during the concrete treatment process. "", And then, after the end electrode of the element is coated with the end electrode and fired, as shown in FIG. 4D No, there is a gap between the end of the internal electrode 22 and the terminal electrode 32 that had been exposed to the outside. Good electrical conduction properties, sticking the above-described embodiment of the process combined surface of the insulating layer of the heat treatment process may end electrodes ^ the same effect is obtained. After the above procedures are completed, the element can be subjected to a normal electroplating process after a conventional wafer-type element electroplating process. The surface of the ceramic body between the terminal electrodes is not coated with metal after the insulation treatment. Embodiment 4: This embodiment is performed after the components have completed the sintering process and the terminal electrodes are manufactured.
第13頁 1235631 五、發明說明(10) 鍍之前塗佈絕緣層,元件經傳統之積層晶片型元件製程 後、電鑛之前得到如弟5 A圖所不之結構,包含陶究本體 12、内電極22及端電極32 ’接著將該元件表面塗佈一芦主 要成份為鉛-鋅-硼-矽之玻璃塗料層40,如第㈤圖所厂、θ, 然後實施50(TC至700 °C之熱處理,即形成如第5/圖所$干社 構,包含陶堯本體12、内電極22、端電極32以及玻璃塗^ 層與陶瓷本體表面材料於熱處理過程中反應生成的表面絕 緣層60,塗佈於端電極表面之塗料於熱處理過程中溶入或 混入端電極金屬中,端電極表面仍保持良好的導電特性一, =層之熱處理製程可和端電極的燒附製程施 而付到相同的效果。 續電二i:ί:成後,M元件可經由傳統晶片型元件之後 體表:it::到正常的電鍍效果1電極之間的陶究本 體表面絰絕緣處理後,$會鍍上金屬。 已,:以=以解釋本創作之較佳實施例而 凡有在相同下:ΐ任何形式上之限制,是以, 更’皆為本創作巾 f作有關本創作之任何修飾或變 T明專利範圍所涵蓋。 1235631 圖式簡單說明 弟1 A圖為習知多層式晶片型陶兗過電壓抑制器元件之平面 不意圖, 第1B圖為第1A圖所示之習知多層式晶片型陶曼過電壓抑制 器元件縱方向之剖面結構圖; 第1 C圖為第1 A圖所示之習知多層式晶片型陶瓷過電壓抑制 器元件横方向之剖面結構圖; 第2 A圖為本發明之多層式晶片型陶瓷過電壓抑制器元件第 一只施例,陶瓷本體燒結之前,表面塗佈一層玻璃塗料層 之剖面結構示意圖; 第2B圖為繼第2A圖製程,進行燒結後,於其表面形成一絕 緣層之剖面結構示意圖; 第2C圖為繼第2B圖製程,該元件端部塗附端電極及燒附後 之剖面結構示意圖;Page 13 1235631 V. Description of the invention (10) Insulation layer is applied before plating. After the traditional multilayer chip type component manufacturing process, before the power ore, the structure as shown in Figure 5A is obtained, including the ceramic body 12, inner The electrode 22 and the terminal electrode 32 'are then coated on the surface of the element with a glass coating layer 40 containing lead-zinc-boron-silicon as the main component, as shown in Figure VII, θ, and then 50 (TC to 700 ° C) The heat treatment forms a dry body structure as shown in FIG. 5 / FIG., Which includes the Tao Yao body 12, the internal electrode 22, the terminal electrode 32, and the glass coating layer and the surface insulation layer 60 of the ceramic body surface material during the heat treatment process. The coating applied to the surface of the terminal electrode is dissolved or mixed into the terminal electrode metal during the heat treatment, and the surface of the terminal electrode still maintains good electrical conductivity. The heat treatment process of the layer can be applied together with the firing process of the terminal electrode. The same effect. After the second power i: ί: After the completion, the M element can pass through the traditional wafer-type element after the body surface: it :: to the normal plating effect 1 the ceramic body surface between the electrodes 绖 insulation treatment, $ will Coated with metal. Already: explained with = The preferred embodiment of the creation is under the same: (1) any form of limitation, that is, more, are all modifications or changes related to the creation of this creation, which are covered by the patent scope. 1235631 Schematic Briefly explain that Figure 1A is a plan view of a conventional multilayer chip type ceramic magister overvoltage suppressor element, and Figure 1B is a longitudinal direction of the conventional multilayer chip type talman overvoltage suppressor element shown in Figure 1A 1C is a cross-sectional structural diagram of a conventional multilayer wafer-type ceramic overvoltage suppressor element shown in FIG. 1A; FIG. 2A is a multilayer wafer-type ceramic wafer of the present invention. In the first example of the voltage suppressor element, before the sintering of the ceramic body, a schematic cross-sectional structure of a glass coating layer is coated on the surface; Fig. 2B is a cross-section of an insulating layer formed on the surface after sintering following the process of Fig. 2A. Schematic diagram of the structure; Figure 2C is a schematic diagram of the cross-sectional structure of the component after the end electrode is coated and fired after the manufacturing process of Figure 2B;
於其表面塗佈一層氧化物混合塗 於其表面形成一絕緣層之剖面結 第3B圖為繼第3A圖製程, 料層’再經熱處理製程, 構示意圖; 第3C圖為繼第3B圖製程 之剖面結構示意圖; #元件端部塗附端電極及燒附後 該元件經熱處理後之剖面結構示 第3D圖為繼第3c圖製程Apply a layer of oxide on its surface and mix it on its surface to form an insulating layer. Section 3B is a diagram following the process of FIG. 3A, and the material layer is then subjected to a heat treatment process to form a schematic diagram. FIG. 3C is a process following the process of FIG. 3B. Schematic diagram of the cross-sectional structure; #The cross-sectional structure of the component after the end electrode is coated with a terminal electrode and after the heat treatment is shown in FIG. 3D is a process following FIG. 3c
第15頁 1235631Page 15 1235631
圖式簡單說明 意圖; 第4 A圖為本發明之多層式晶片型陶瓷過電壓抑制器元件第 三實施例,陶瓷本體燒結後、端電極製作之前之剖面結構 第4B圖為繼第4A圖製程,該元件浸泡於〇· 5%HC1水溶液中j 分鐘後,内電極端部向外凸出之剖面結構示意圖; 第4C圖為繼第4B圖製程,該元件表面塗佈一層玻璃塗料 層,再經熱處理製程,於其表面形成一絕緣層之剖面結構 不意圖; 第4 D圖為繼第4 C圖製程,該元件端部塗附端電極及燒附後 之剖面結構示意圖; 第5 A圖為本發明之多層式晶片型陶瓷過電壓抑制器元件第 四實施例,陶瓷本體燒結後並完成端電極製作後之剖面結 構不意圖; 第5B圖為繼第5A圖製程,於其表面塗佈一層玻璃塗料層之 剖面結構示意圖; 第5C圖為繼第5B圖製程,再經熱處理程序,於其表面形成 一絕緣層之剖面結構示意圖。 【元件符號簡單說明】 尚未燒結之陶瓷本體1 0 燒結後之陶瓷本體1 2 尚未燒結之内電極20 燒結後之内電極22The drawing is for simple explanation; FIG. 4A is a third embodiment of the multilayer wafer-type ceramic overvoltage suppressor element of the present invention. The cross-sectional structure of the ceramic body after sintering and before the terminal electrode is manufactured. FIG. 4B is a process following FIG. 4A. After the element is immersed in a 0.5% HC1 aqueous solution for j minutes, the cross-sectional structure of the inner electrode end is projected outward; Figure 4C is a process following Figure 4B, the surface of the element is coated with a glass coating layer, and After the heat treatment process, the cross-sectional structure of an insulating layer is not intended on the surface; FIG. 4D is a schematic diagram of the cross-sectional structure of the component after the end electrode is coated with the terminal electrode and after firing; FIG. 5A This is the fourth embodiment of the multilayer wafer-type ceramic overvoltage suppressor element of the present invention. The cross-sectional structure after the ceramic body is sintered and the terminal electrode is completed is not intended. Figure 5B is a process following Figure 5A, and the surface is coated. A schematic view of the cross-sectional structure of a glass coating layer; FIG. 5C is a schematic view of the cross-sectional structure of an insulating layer formed on the surface after the process of FIG. 5B and then subjected to a heat treatment process. [Simple description of component symbols] Ceramic body that has not been sintered 1 0 Ceramic body that has been sintered 1 2 Internal electrode that has not been sintered 20 Internal electrode after sintering 22
1235631 圖式簡單說明 尚未燒附之端電極30 燒附後之端電極3 2 未經熱處理的陶瓷本體表面之塗料層4 0 表面絕緣層6 0 表面絕緣層製作完成後,内電極端部殘存之塗料80 li·· 第17頁1235631 The diagram simply illustrates the end electrode that has not been fired. 30 The end electrode after fired. 3 2 The coating layer on the surface of the ceramic body without heat treatment. 4 0 Surface insulation layer. Coatings 80 li ·· Page 17
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