!235〇l〇 坎、發明說明： 【發明所屬之技術領域】 本發明是有關於-種麥克風及其製造方法，特別是指 一種單晶片式的麥克風及其製造方法。 【先前技術】 10 15 由於電子產品的發展趨勢是一直往體積輕薄、小巧的 方向’X展麥克風的發展當然也不例外，而微型晶片式麥 克風令的麥克風晶片的製造發展，可以隨著半導體製程或 微機電技術的進步而可以同步進步，並且可以精確控制成 品的體積尺寸，因此成為主要發展對象。 -般微型晶片式麥克風，是將一麥克風晶片與一場效 電晶體電性連結，並共同封裝於—基座中而成，然後將基 座電ί·生連、於電氣產品之—電路板上，即可使微型晶片 式麥克風正常作動使用。上述麥克風晶片可分為二種，一 疋刀別製備-振膜晶片及一背板晶片之後，再粘合 (bonding)成一體的雙晶片式麥克風晶片；另一則是自 -基材直接形成各細部構造的單晶片式麥克風晶片，兹一 一詳述於後。 參閱圖卜習知微型晶片式麥克風1内所應用的雙晶 片式麥克風晶片2,包含一可接收一聲能的振膜晶片。及 一可電性連結於—基座3GG上的背板晶片22。 -亥振膜阳片21是應用微機電技術製備而成，具有一 截面略呈V字型電極層211、一由電極層211向下形成 之振膜212、-由該振膜212向下形成之分隔塊213。 1235010 該背板晶片22同樣也是應用微機電技術製備而成， 具有一形成有多數穿孔221的背板電極層222，及一自該 背板電極層222向下形成的背氣室層223,該背氣室層223 界定出一與該複數穿孔221相通的背氣室24。 5 10 15 該背板晶片22以該背板電極層222與該振膜晶片21 之分隔塊213相枯合後，該背板晶片22與該振膜晶片21 即一體形成該雙晶片式麥克風晶片2，同時，該振膜212、 分隔塊213，與該背板222共同界定出一與該等穿孔221 相通之振動空間23。該電極層211、振膜212，與背板電 極層222共同形成一電容，且當該電極層211受該聲能作 用時，該振膜212會產生相對應之形，變，而使該電容相對 應地產生改變，該場效電晶體2〇〇可將此電容變化轉變成 一電子信號而傳輸，同時，振膜212形變時所產生的氣流 可以藉3等穿孔221自由地在該振動空間23與背氣室24 U而使从型晶片式麥克風1使用時具有好的頻率響 應0 、參閱圖2，習知微型晶片式麥克風i，内所應用的單晶 片式麥克風晶# 3,其基本構造與上述雙晶片麥克風晶片 2大致相似，不同處僅在於單晶片式麥克風晶片3是應用 微機電技術自一矽基材一體製備而已。 该早曰曰片式麥克風晶片3具有一可與基座 的石夕基材30、—形成於該石夕基材30上的背氣室層3卜^ 氣室層31上的背板電極㈣、一形成_ 曰2上的分隔塊33、一形成於該分隔塊33上㈣ 20 1235010 膜34及一形成於该振膜34上的電極層35。 邊背氣室層31界定出_背氣室311;該背板電極層 32具有多數穿孔321 ;該背板電極層32、分隔塊33、振 膜34共同形成一振動空間36，且該振動空間祁與背氣室 311間可藉該等穿孔321相連通；該電極層35、振膜34, 與背板電極層32共同形成一電容。 當聲能作用於該電極層35時，該振膜34會產生相對 應之形變，而使该電容相對應地產生改變，該場效電晶體 2〇〇可將此電容變化轉變成一電子信號而傳輸，同時，振 膜34形變時所產生的氣流可以藉該等穿孔321自由地在 ίο 15 該振動空^ 36與背氣室311間流動，而使微型晶片式麥 克風1使用時具有好的頻率響應。 上述無論是雙晶片式麥克風晶片2或是單晶片式麥克 風晶片3 ’均是應用微機電技術，例如設計光罩、上光阻、 曝光、顯影、沉積、蝕刻....等等製程所製備完成。而熟悉 微機電技術或是半導體製程技術人士均知，在進行微機電 技術的體蝕刻（Bulk Etching)日夺，不但必須花費長時間 進仃’同時’也因為製程時間長，期間不可控的因子也合 同時增加，而使得餘刻的結果不易控制如預期般理想。曰 上述無論是雙晶片式麥克風晶片2或單晶片式麥克風 晶片3，其形成背氣室24 ’以及形成電極層2U時，都必 須進行屬於㈣刻賴刻過程一㈣刻深度均在_至 500微米之間，因此，不但必需耗費長時間進行，同時 蚀刻後的成型結果亦未必盡如初始設計般完美，而使微型 20 〜〇υι〇 晶片式麥克風的品質結果未如預期。 因此如何改善用麥 5 10 15 麥克風晶片本身的結構風w的體_製程’或是改善 的體姓刻製程，以節省製==本無須進行耗費時間 :克風成品品質，是麥克風業者研究改二得更完美的 【發明内容】 所九改善的目標之一。 因此，本發明之目的， 麥克風，且無須進行耗 /、種用於微型晶片式 晶片，及製造此種麥c雜爾程的麥克風 本發明之-種微型單晶片式麥 一麥克風晶片。 3 基座，及 ^基座具有一界定出一容置空間 於一電路板上。 4电丨王逆、、、口 連接°亥^風0日片封裝於該容置空間中而與該殼體電性 ==與該殼體相連結的基材，及-自該基材向上 形成的感應部，該咸庫邱由红 4應4包括-與基材相連結的第-電極 滑、一與該第一電極層相問1¾认姑 0B 一 增相間隔的第二電極層、多數彼此相 '也布叹於邊第一、二電極層之間的分隔塊，及一與該 第二電極層相連結的振膜，該第一、二電極層共同構成一 電容。 田聲把作用於該感應部時，該振膜會相對應產生形 ^而，該電容對應變化，同時，該振膜形變引起之一氣 Μ疋自口亥第-、一電極層間的空隙經由該等分隔塊彼此 間的間隙自由流動至該容置空間中。 20 1235010 此外’本發明之一種微型單晶片式麥克風的製造方 法，包含下列步驟： (a) 於一石夕基材上形成一第一電極層。 (b) 於該第一電極層上向上形成多數相間隔且等高 之分隔塊，及一與該等分隔塊等高之犧牲層，該犧牲層位 於該等分隔塊所圍構界限出之區域範圍中。 (c) 自該等分隔塊與該犧牲層上向上形成一振膜。 (d) 於該振膜上形成一第二電極層。 ίο 15 (e) 移除該犧牲層，使該第一、二電極層共同構成 一電容，完成一麥克風晶片。 ⑴將該麥克風晶片封裝於一可供一聲能進入之基 座中。 本發明之功效在於提供無須進行體㈣製程的麥克 風晶片，以及製造此麥克風日日日片的製造方法，以節省製程 時間成本，以提昇麥克風晶片的成品品質。 【實施方式】 有關本發明之前述及其他技術内容、 以下配合參考圖式之二較佳實施例的詳細說”功二 楚的明白。 * 在此要先說明的是，本發明一種微型單晶 及其製造方法’主要是應用微機電系統技術㈣ ^ 配合矽，或含矽之化合物，例如氮化矽（s^)、二並 矽（Sl02)為材料，其他例如BCB ( 氧化 ^ J Λψ j \ STTsjp 聚醯亞胺（polyimide PI)、或業界習 、 冉之SU-8等光阻材 20 1235010 質也都可以視需求加以應用；同時，在形成每一細部構造 時，均必須視需要進行如薄膜成長、微影罩幕、㈣成型.... 等等半導體晶片成型製程。由於微機電系統技術已經H 應用數十年，而半導體晶片成型製程更是以為業界所熟知 5 料術，同時’本發明之重點在於應用此等業界熟知的技 術丄製造-新型構造的麥克風晶片，而非在於各項製程之 細節改善，故在此不多加一一解釋說明該等製程。但為了 更清楚地說明本發明之製造方法，以下仍以一實際的製造 過程加以說明，但熟知微機電系統技術之技藝人士告知， 1〇 树明—種微型單晶片式麥克風及其製造方法，並;以下 列說明為限。 參閱圖3、圖4,本發明一種微型單晶片式麥克風4 之一第一較佳實施例，包含一基座5、-場效電晶體6, 及一麥克風晶片7。 人如圖3所不，該基座5具有一殼體51，該殼體51包 f 一底壁52、-由該底壁52之一外周緣向上延伸之外周 壁/3、—可供一外界之聲能穿透之上蓋54,及多數布設 :氐土 52上的電極接點55,該底壁52與外周壁53共 2〇 曰 谷置王間56，以供封裝該場效電晶體ό與該麥 風曰曰片7，該上蓋54可與該外周壁53之一頂緣相連結 而封閉该容置空間56，使該聲能僅由該上蓋54進入而作 接凌於該容置空間％中的麥克風晶片7,該每一電極 電著技術（謝）f性連結於—電器產品的 上’以供電性導通該麥克風晶片7、場效電晶 1235010 體6與該電路板4〇〇。 該場效電晶體6是一習知之電子元件，可容置於 空間56中並盘底辟59知、击α 、置 乂、 土 2相連結，且同時與麥克風晶片7、 5 10 15 20 土座5之^刀電極接點55相電性連結，而可將麥克 片7的電11改變，例如電容變化、電壓變化等，轉變成電 子信號而向外傳送。而，-般場效電晶體6形成的方式有 二’一是㈣製備好單-電子元件，於後續製程中再行電 性連結；另-則是在以微機電技術進行麥克風晶片7的製 私時同步内建於麥克風晶片7中。在本例以及圖示中， 該場效電晶體6是以同步内建形成於該麥克風晶片7中， 由於此等整合各式電子元件於單_晶片中的技藝，係屬另 一電路設計之領域料，且非本發明重關在，故在此不 多加贅述。 該麥克風晶片7封裝於該基座5之容置空間56中， 且同時與忒基座5之部分電極接點55以及該場效電晶體6 電性連接，具有一與該底壁52相連結的基材71，及一自 该基材71向上形成的感應部72。 該基材71是一由矽晶圓分割之矽晶片。 同時配合參閱圖4，該感應部72包括一自該基材71 向上形成的第一電極層721、多數自該第一電極層721更 向上形成的分隔塊722、一自該等分隔塊722向上形成的 第二電極層723，及一形成於該第二電極層723之一相對 該第一電極層721之表面上的振膜724。該第一、二電極 層721、723分別以一導體材料，例如金屬構成，而可施 10 5 10 15 1235010 加一預定偏Μ以極化共同構成一電容；該等分隔塊722彼 此相間隔地呈一環狀分布，每一分隔塊722分別具有一預 疋之截面形狀（圖示中僅以截面均為矩形、但大小不同為 例說明），而使得該等分隔塊722共同將該第一電極層 721、振膜724之間的空隙界限出一可供氣流流動的振動 振動空間725，同時相鄰兩分隔塊722之間的間隙配合形 成一預定態樣，使該振動空間725與該容置空間56藉該 等形成預定態樣之間隙相連通。 當聲能穿過該上蓋54而作用於該感應部72時，該振 膜724會相對應產生形變而使該電容對應變化，該場效電 晶體6同步將該電容變化轉換成電子信號向外傳送，同 時，泫振膜724形變引起之一氣流，可經由該複數間隙在 該振動空間725與該容置空間56中自由流動，而使該晶 片式麥克風4具有預定的頻率響應。 參閱圖5，本發明一種微型單晶片式麥克風4，之第二 車乂佳實施例’是與上述該第一較佳實施例相似，其不同處 僅在於該麥克風晶片7,之感應部72，，以下僅就其不同處 詳加說明。 〃該感應部72,更包含一以駐極體材料，例如氧化石夕、 氮化矽、鐵氟龍等等形成的駐極體層727，該駐極體層 可形成在該第-電極層721或是該第二電極層723上，在 本例中，是以駐_ 727形成於該第一_ 721且相 對該振膜724之-表面上為例說明；極化後，該第一、二 電極層721、723可藉由該駐極體層727共同構成電容， 20 1235010 而可如上例所述發揮預定功效。 ^再者，本發明一種微型單晶片式麥克風之第三較佳實 施例，是與上述該第一、二較佳實施例相似，其不同處僅 在於如何使該感應部之第一、二電極層共同構成一電容的 方式而已。在本例中，該感應部更包含一可提供電荷之浮 =電極單it (floating electrode)，藉此浮動電極單元使該 第一、二電極層帶預定電荷而構成一電容，而可如上述兩 例般發揮預定功效。 - 參閱圖6,本發明微型單晶片式麥克風的製造方法8 籲， 之第一較佳實施例，是可製造上述本發明微型單晶片式麥 克風之第一較佳實施例所述的微型單晶片式麥克風4。 首先進行步驟81，應用半導體製程於一矽為材質的基 才1、上形成場效電晶體6，如圖7所示，由於在石夕基材上 應用半導體製程形成場效電晶體的過程已為業界所周 知，且非本發明重點所在，故不再多加詳細說明。 接著進行步驟82，選用一可導電之導體材料，例如金 · 屬’以蒸錢、麟等方式，於該基材71上沉積_薄層，· 而形成第一電極層721，如圖8所示。 ^參閱圖9、圖1〇,再進行步驟83,應用例如光阻塗佈、 薄膜成長、彳政影罩幕等半導體製程，於該第一電極層72 ^ 上形成多數相間隔且等高之分隔塊722，及一與該等分隔 塊722等高之犧牲層728，該每一分隔塊722可應用預定 態樣之光罩形成，使每-分隔塊722之截面形狀，以及兩 相鄰之分隔塊722所構成之間隙，均具有預定態樣，該犧 12 5 10 15 20 l235〇l〇 牲層728並位於該等分隔塊722戶斤圍構界限出之區域範圍 中。 該等分隔塊722所選用的材料可為矽、含矽之氧化 物、含石夕之氮化物、光阻，等等，該犧牲層W所選用的 材料則可為多晶石夕、含石夕之氧化物、紹、含石夕之氮化物、 光阻等’但熟悉半導體製程人士皆知，此等材料的選用必 須配合後續之敍刻製程而有所變化，由於本發明之重點並 非在於敍刻製程與材料之相關配合改善，故在此不多加贅 述0 友接著進行步驟84 ’選用例如石夕、含石夕之氧化物、含矽 氮化物％阻，藉该等分隔塊722與該犧牲層咖，自 該等分隔塊722與該犧牲層728更向上形成振媒724 圖11、12所示。 參閱圖，進行步驟85,選用一可導電之導體材料， 例如金屬’、濺料方式，於該振膜7 薄層，而形成第二電極層723。 L積一 參閱圖H、圖15，進行步驟％，敍刻移除該犧 728，並以施加一偏壓方式使該第一、二電極層心 構成-電容，完成麥克風晶片7的製備。 最後進行步驟87，將該麥克風晶片7封裝於可供 能進入之基座5中，古—甘— 並使该基座5、場效電晶體6、 ==定電性連結，完成微型單晶片 的製造，如圖3所示。 本發明微型單j Η 4 ± π 早阳片4麥克風的製造方法之第二較佳 13 5 10 15 20 I235〇i〇 實施例，是可製造如圖5所示，本發明微型單晶片式麥克 風的第二較佳實施例所述的微型單晶片式麥克風4，。今僅 就本例與上述該第一較佳實施例中不同的部分進行說明。 本例在上例之步驟82中，形成第-電極層721之後， 再選用-駐極體材料，例如氧切、氮切、㈣龍等等， M沉積或是旋轉塗佈等方式，於該第-電極層721上再形 成該駐極體層727;並配合此駐極體層727之形成，在步 驟86㈣移除犧牲層728之後，加以極化，藉該駐極體 層727使言亥第一、-雷搞爲_ 一電極層721、723構成一駐極體式電 谷’完成麥克風晶片4’的製備。由於其他各步驟均與該第 一較佳實施例相似，故在此不再多加贅述。 一备然’為對應製造上述本發明微型單晶片式麥克風的 第三較佳實施例所述的微型單晶片式麥克風，本發明微型 早晶片式麥克風的製造方法之第三較佳實施例，是與該第 一較佳實施例所述的製造過程相似，其不同處僅在於本例 在上例之步驟81巾，形成該場效電晶體6的同時，必須 二步形成：可儲存電荷之浮動電極單元，之後，並配合此 :予動電極單7C，在步驟86蚀刻移除犧牲層之後，由 該浮動電極單元提供預定電荷使該第-、二電極層721、 ⑵構成-電容，完成麥克風晶片的製備。由於其他各步 驟均與該第-較佳實施例相似，故在此不再多加費述。 由上述5兒明可知，本發明微型單晶片式麥克風4、4, 的製造方法，並未應用到㈣刻製程，因此可以大幅改善 習知必須耗費長時間進行體蝕刻製程的缺點，而可以大幅 14 1235010 郎省製程時間成本，以降低麥克風成品品質的不良率， 確實達到本發明之目的。 惟以上所述者，僅為本發明之二較佳實施例而已，當 不能以此限定本發明實施之範圍，即大凡依本發明中^ 利範圍及發明說明書内容所作之簡單的等效變化^修 飾’皆應仍屬本發明專利涵蓋之範圍内。 【圓式簡單說明】 圖1是一剖視圖，說明習知之一應用雙晶片式麥克風 晶片之微型晶片式麥克風的構造； 圖2是一剖視圖，說明習知之一應用單晶片式麥克風 晶片之微型晶片式麥克風的構造； 圖3是一剖視圖，說明本發明之微型單晶片式麥克風 之第一較佳實施例的構造； 圖4是一俯視圖，辅助說明圖3之微型單晶片式麥克 風之第一較佳實施例的構造； 圖5是一剖視圖，說明本發明之微型單晶片式麥克風 之第一較佳實施例的構造； 圖6是一流程圖，說明本發明之微型單晶片式麥克風 的製造方法之第一較佳實施例； 圖7是-剖視圖，說明以一微機電系統技術製造如圖 3所不之微型單晶片式麥克風，實施圖6之步驟後的 對應態樣； 圖8是-剖視圖，說明以一微機電系統技術製造如圖 3所示之微型單晶片式麥克風，實施圖6之步驟後的_相 15 1235010 對應態樣； 圖9是-剖視圖，說明以一微機電系統技術製造如圖 3所示之微型單晶片式麥克風，實施圖6之步驟後的-相 對應態樣； 5 10 圖10是圖9之一俯i目θ W視圖，辅助說明實施圖6之步驟 後的一相對應態樣； 圖1 1是一剖視圖，句B日、 t Λ . w兒明以一微機電系統技術製造如 圖3所示之微型單晶片式|古 飞麥克風，實施圖6之步驟後的一 相對應態樣； 圖12是圖10之一俯满展|上 ^ 見圖，輔助說明實施圖6之步驟 後的一相對應態樣； 圖13是一剖視圖，句ΒΒ、 說明Μ—微機電系統技術製造如 圖3所示之微型單晶片式散古^ 力八麥克風，實施圖6之步驟後的一 相對應態樣； 15 圖14是一剖視圖 圖3所示之微型單晶片 相對應態樣；及 ’說明以一微機電系統技術製造如 式麥克風，實施圖6之步驟後的一 圖15是圖14之一俯視圖 後的一相對應態樣。 ，辅助說明實施圖6之步驟 20 16 1235010 【圓式之主要元件代表符號說明】 1 > Γ 微型晶片式麥克風 35 電極層 200 場效電晶體 36 振動空間 300 基座 4.4， 微型單晶片式麥克風 400 電路板 5 基座 2 雙晶片式麥克風晶片 51 殼體 21 振膜晶片 52 底壁 211 電極層 53 外周壁 212 振膜 54 上蓋 213 分隔塊 55 電極接點 22 背板晶片 56 容置空間 221 穿孔 6 場效電晶體 222 背板電極層 7.7， 麥克風晶片 223 背氣室層 71 基材 23 振動空間 72 、 72, 感應部 24 背氣室 721 第一電極層 3 單晶片式麥克風晶片 722 分隔塊 30 $夕基材 723 第二電極層 31 背氣室層 724 振膜 311 背氣室 725 振動空間 32 背板電極層 727 駐極體層 321 穿孔 728 犧牲層 33 分隔塊 8 製造方法 34 振膜 81 步驟 17 1235010 82 步驟 85 步驟 83 步驟 86 步驟 84 步驟 87 步驟 18235〇l0, description of the invention: [Technical field to which the invention belongs] The present invention relates to a microphone and a manufacturing method thereof, and particularly to a single-chip microphone and a manufacturing method thereof. [Previous technology] 10 15 Because the development trend of electronic products is always in the direction of thinness and compactness, the development of X-X microphones is of course no exception, and the development of microphone chips made by micro-chip microphones can follow the semiconductor manufacturing process. Or the progress of micro-electromechanical technology can be synchronized, and the volume size of the finished product can be accurately controlled, so it has become the main development object. -General miniature chip type microphone, which is a microphone chip and a field effect transistor are electrically connected and packaged together in the-base, and then the base is connected to the electrical product-circuit board , So that the micro chip microphone can be used normally. The above-mentioned microphone wafers can be divided into two types. One is to prepare a diaphragm wafer and one back plate wafer, and then bond them into a two-chip microphone wafer. The other is to form the details directly from the substrate. The structure of the single-chip microphone chip is detailed below. Referring to FIG. 2, a dual-chip microphone chip 2 used in a miniature chip-type microphone 1 includes a diaphragm chip capable of receiving an acoustic energy. And a backplane chip 22 electrically connected to the base 3GG. -The helical diaphragm positive plate 21 is prepared by applying micro-electromechanical technology, and has a V-shaped electrode layer 211 with a cross section, a diaphragm 212 formed downward from the electrode layer 211, and-formed downward from the diaphragm 212. Of the separation block 213. 1235010 The back plate wafer 22 is also prepared by using micro-electromechanical technology, and has a back plate electrode layer 222 formed with a plurality of perforations 221, and a back gas chamber layer 223 formed downward from the back plate electrode layer 222. The back air chamber layer 223 defines a back air chamber 24 communicating with the plurality of perforations 221. 5 10 15 After the back plate wafer 22 is dried with the back plate electrode layer 222 and the partition block 213 of the diaphragm wafer 21, the back plate wafer 22 and the diaphragm wafer 21 are integrated to form the dual wafer microphone chip. 2. At the same time, the diaphragm 212, the partition block 213, and the back plate 222 together define a vibration space 23 communicating with the perforations 221. The electrode layer 211 and the diaphragm 212 together form a capacitor with the back plate electrode layer 222, and when the electrode layer 211 is affected by the acoustic energy, the diaphragm 212 will have a corresponding shape and change to make the capacitor. Corresponding changes occur. The field effect transistor 200 can convert this capacitance change into an electronic signal for transmission. At the same time, the air flow generated when the diaphragm 212 is deformed can be freely in the vibration space 23 by a third-class perforation 221. With the back air chamber 24 U, the slave chip microphone 1 has a good frequency response when it is used. Referring to FIG. 2, the conventional micro chip microphone i is a single chip microphone microphone # 3, which has a basic structure. It is roughly similar to the dual-chip microphone chip 2 described above, except that the single-chip microphone chip 3 is fabricated from a silicon substrate using micro-electromechanical technology. The early-stage chip microphone chip 3 has a Shi Xi base material 30 which can be connected to the base, a back air chamber layer 3 formed on the Shi Xi base material 30, and a back plate electrode on the air chamber layer 31. A partition block 33 formed on the substrate 2, a 20 1235010 film 34 formed on the partition block 33, and an electrode layer 35 formed on the diaphragm 34. The side back air chamber layer 31 defines a back air chamber 311; the back plate electrode layer 32 has a plurality of perforations 321; the back plate electrode layer 32, the partition block 33, and the diaphragm 34 jointly form a vibration space 36, and the vibration space The Qi and the back air chamber 311 can communicate through the perforations 321; the electrode layer 35, the diaphragm 34, and the back plate electrode layer 32 together form a capacitor. When acoustic energy is applied to the electrode layer 35, the diaphragm 34 will be deformed correspondingly, and the capacitance will be correspondingly changed. The field effect transistor 200 can convert this capacitance change into an electronic signal. At the same time, the airflow generated when the diaphragm 34 is deformed can flow freely between the 15th vibration space ^ 36 and the back air chamber 311 by the perforations 321, so that the microchip microphone 1 has a good frequency when used. response. The above-mentioned two-chip microphone chip 2 or single-chip microphone chip 3 ′ are all prepared by applying micro-electromechanical technology, such as designing a photomask, photoresist, exposure, development, deposition, etching, etc. carry out. And those who are familiar with micro-electromechanical technology or semiconductor process technology know that when performing bulk electro-mechanical technology (Bulk Etching), not only must it take a long time to enter the 'simultaneously' but also because of the long process time and uncontrollable factors during the period It also increased during the contract, which made the remaining results difficult to control as ideal as expected. That is to say, whether it is a dual-wafer microphone wafer 2 or a single-wafer microphone wafer 3, the formation of the back air chamber 24 ′ and the formation of the electrode layer 2U must be performed. The engraving process is a engraving depth of _ to 500. Therefore, not only must it take a long time to perform, but also the molding result after etching may not be as perfect as the original design, and the quality result of the miniature 20 ~ 〇υι〇 wafer microphone is not as expected. Therefore, how to improve the structure of the microphone 5 10 15 using the microphone's own structure _ process '' or improve the engraving process of the family name to save the system == this does not need to take time: the quality of the finished product is a microphone industry research and reform Two is more perfect [Content of the invention] One of the goals of the nine improvements. Therefore, for the purpose of the present invention, a microphone is not required to be used for a micro wafer type wafer, and a microphone for manufacturing such a microphone is provided. 3 base, and ^ the base has a space defined on a circuit board. 4 电 丨 Wang Ni, ,, and mouth connection ° Hai ^ wind 0 day film is packaged in the accommodating space and is electrically connected to the casing == the substrate connected to the casing, and-upward from the substrate The formation of the induction part, the Xiankuqiu from red to 4 includes-a first electrode layer connected to the substrate, a second electrode layer interposed with the first electrode layer, a second electrode layer with a phase separation interval, Most of the phases are also sighed by the partition between the first and second electrode layers, and a diaphragm connected to the second electrode layer. The first and second electrode layers together constitute a capacitor. When Tian Sheng applied the induction part, the diaphragm would be deformed correspondingly, and the capacitance would change accordingly. At the same time, the diaphragm deformation caused a gas M 疋 from the gap between the electrode layer and the electrode layer through the gap. The gaps between the equal partition blocks flow freely into the accommodation space. 20 1235010 In addition, a method for manufacturing a miniature single-chip microphone according to the present invention includes the following steps: (a) forming a first electrode layer on a stone substrate. (b) forming a plurality of spaced-apart, equally-spaced spacers upward on the first electrode layer, and a sacrificial layer of the same height as the spacers, the sacrificial layer is located in the area bounded by the spacers In range. (c) A diaphragm is formed upward from the spacers and the sacrificial layer. (d) forming a second electrode layer on the diaphragm. ίο 15 (e) Remove the sacrificial layer so that the first and second electrode layers together form a capacitor to complete a microphone chip. ⑴ The microphone chip is packaged in a base which can be accessed by a sound energy. The effect of the present invention is to provide a microphone chip which does not need to be subjected to a bulk manufacturing process, and a manufacturing method for manufacturing the microphone day-to-day film, so as to save the process time cost and improve the quality of the finished product of the microphone chip. [Embodiment] Regarding the foregoing and other technical contents of the present invention, the following is a detailed description of the second preferred embodiment with reference to the drawing, "two clear understandings. * It should be explained here first that a micro single crystal of the present invention And its manufacturing method 'mainly using micro-electro-mechanical system technology ㈣ ^ with silicon, or silicon-containing compounds, such as silicon nitride (s ^), dichroic silicon (Sl02) as materials, others such as BCB (oxide ^ J Λψ j \ STTsjp Polyimide PI, or photoresist materials such as the industry custom, Ran Zhi SU-8 20 1235010 can also be applied as required; At the same time, in the formation of each detailed structure, it must be performed as needed Such as thin film growth, lithography, sculpting, etc ... Semiconductor wafer forming process. Since MEMS technology has been used for decades, semiconductor wafer forming process is well known in the industry. At the same time, 'The focus of the present invention is to apply these well-known technologies in the industry to manufacture-new structure microphone chips, rather than to improve the details of each process, so we will not explain these processes one by one. However, in order to explain the manufacturing method of the present invention more clearly, an actual manufacturing process will be described below. However, those skilled in micro-electro-mechanical systems technology have informed that 10 Shuming—a miniature single-chip microphone and its manufacturing method The following description is limited. Referring to FIGS. 3 and 4, a first preferred embodiment of a miniature single-chip microphone 4 according to the present invention includes a base 5, a field effect transistor 6, and a microphone. Wafer 7. As shown in FIG. 3, the base 5 has a housing 51, and the housing 51 includes a bottom wall 52, which extends from the outer peripheral edge of one of the bottom walls 52 to the outer peripheral wall / 3,- An external sound can penetrate the upper cover 54 and most of the layout: the electrode contact 55 on the earth 52, the bottom wall 52 and the peripheral wall 53 are a total of 20, and the valley is set to the king 56 to encapsulate the field. The effect transistor is connected to the wheat wind film 7, and the upper cover 54 may be connected to a top edge of the outer peripheral wall 53 to close the accommodation space 56 so that the acoustic energy only enters through the upper cover 54 for connection. In the microphone chip 7 in the accommodating space, each electrode is electrically connected to the electronic product. The upper part of the microphone is used to electrically connect the microphone chip 7, the field effect transistor 1235010 body 6 and the circuit board 400. The field effect transistor 6 is a conventional electronic component, which can be accommodated in the space 56 and bottomed. It is connected to the microphone 59, alpha, 乂, and soil 2 and is electrically connected to the microphone chip contact 5, 55, 10, 15 and 20 of the pedestal 5 at the same time. Changes, such as changes in capacitance and voltage, are converted into electronic signals and transmitted outward. However, there are two ways to form the field-effect transistor 6: one is to prepare a single-electronic component, which will be processed in subsequent processes. The electrical connection; the other is that the microphone chip 7 is built in the microphone chip 7 synchronously when the microphone chip 7 is manufactured by the micro-electromechanical technology. In this example and the illustration, the field effect transistor 6 is formed in the microphone chip 7 in a synchronous and built-in manner. Because of the technology of integrating various electronic components in a single chip, it is another circuit design. Field materials, and not the focus of the present invention, so I will not repeat them here. The microphone chip 7 is packaged in the accommodating space 56 of the base 5, and is electrically connected to part of the electrode contacts 55 of the base 5 and the field effect transistor 6 at the same time, and has a connection with the bottom wall 52. A substrate 71 and a sensing portion 72 formed upward from the substrate 71. The substrate 71 is a silicon wafer divided by a silicon wafer. At the same time, referring to FIG. 4, the sensing portion 72 includes a first electrode layer 721 formed upward from the substrate 71, a plurality of partition blocks 722 formed upward from the first electrode layer 721, and a plurality of partition blocks 722 formed upward from the first electrode layer 721. The second electrode layer 723 is formed, and a diaphragm 724 is formed on a surface of one of the second electrode layers 723 opposite to the first electrode layer 721. The first and second electrode layers 721 and 723 are respectively made of a conductive material, such as metal, and 10 5 10 15 1235010 plus a predetermined bias M can be polarized to form a capacitor together; the partitions 722 are spaced apart from each other. It is distributed in a ring shape, and each partition block 722 has a predetermined cross-sectional shape (only the cross section is rectangular in the illustration, but the size is different as an example), so that these partition blocks 722 collectively use the first The gap between the electrode layer 721 and the diaphragm 724 defines a vibration space 725 for air flow, and the gap between two adjacent partitions 722 cooperates to form a predetermined state, so that the vibration space 725 and the capacity The setting space 56 communicates by the gaps forming a predetermined appearance. When acoustic energy passes through the upper cover 54 and acts on the sensing portion 72, the diaphragm 724 will correspondingly deform to cause the capacitance to change correspondingly. The field effect transistor 6 simultaneously converts the capacitance change into an electronic signal outward At the same time, an air current caused by the deformation of the chirping diaphragm 724 can flow freely in the vibration space 725 and the accommodation space 56 through the plurality of gaps, so that the wafer microphone 4 has a predetermined frequency response. Referring to FIG. 5, a miniature single-chip microphone 4 according to the present invention. The second preferred embodiment of the present invention is similar to the first preferred embodiment described above. The only difference is in the sensing portion 72 of the microphone chip 7. , The following only details the differences.感应 The sensing portion 72 further includes an electret layer 727 formed of an electret material, such as stone oxide, silicon nitride, Teflon, etc. The electret layer may be formed on the first electrode layer 721 or It is on the second electrode layer 723. In this example, it is described that the _727 is formed on the first_721 and is opposite to the diaphragm 724. After the polarization, the first and second electrodes The layers 721 and 723 can jointly form a capacitor by the electret layer 727, and can perform a predetermined function as described in the above example. ^ Furthermore, the third preferred embodiment of a miniature single-chip microphone of the present invention is similar to the first and second preferred embodiments described above, except that the first and second electrodes of the sensing portion are different. The layers together form a capacitor. In this example, the sensing unit further includes a floating electrode that can provide electric charge (floating electrode), whereby the floating electrode unit makes the first and second electrode layers carry a predetermined charge to form a capacitor, which can be as described above. Two cases worked as intended. -Referring to FIG. 6, the manufacturing method 8 of the miniature single-chip microphone of the present invention is a first preferred embodiment, which is a miniature single-chip according to the first preferred embodiment of the above-mentioned miniature single-chip microphone of the present invention. Style microphone 4. First, step 81 is performed. A semiconductor process is used to form a field-effect transistor 6 on a silicon-based substrate 1. As shown in FIG. 7, the process of forming a field-effect transistor by applying a semiconductor process on a Shi Xi substrate has been completed. It is well known in the industry and is not the focus of the present invention, so it will not be described in detail. Next, step 82 is performed, and a conductive material is selected, for example, metal is used to deposit a thin layer on the substrate 71 by means of steaming money or lin, to form a first electrode layer 721, as shown in FIG. 8 Show. ^ Refer to FIG. 9 and FIG. 10, and then proceed to step 83, using a semiconductor process such as photoresist coating, thin film growth, and lithographic masking, to form a plurality of phase intervals on the first electrode layer 72 ^ and the same height. The spacers 722 and a sacrificial layer 728 having the same height as the spacers 722, each of the spacers 722 can be formed by using a mask of a predetermined shape, so that the cross-sectional shape of each of the spacers 722, and two adjacent ones The gaps formed by the partitions 722 all have a predetermined appearance, and the sacrifice layer 12 5 10 15 20 12 35 10 10 is located in the area bounded by the enclosures of the partitions 722. The materials selected for the spacers 722 may be silicon, silicon-containing oxides, stone-containing nitrides, photoresists, and the like, and the material used for the sacrificial layer W may be polycrystalline stones, stone-containing materials, and the like. The oxide of the evening, the oxide of the evening, the nitride containing the stone, the photoresist, etc. But those who are familiar with the semiconductor process know that the selection of these materials must be changed in accordance with the subsequent engraving process, because the focus of the present invention is not on Relevant coordination of the sculpting process and materials has been improved, so I will not repeat them here. You then proceed to step 84 'Select, for example, Shi Xi, Shi Xi-containing oxides, silicon nitride-containing% resistance, and borrow these partitions 722 and the For the sacrificial layer coffee, a vibrating medium 724 is formed upward from the partition blocks 722 and the sacrificial layer 728 as shown in FIGS. 11 and 12. Referring to the figure, step 85 is performed, and a conductive material, such as a metal ', is used for sputtering, and a thin layer is formed on the diaphragm 7 to form a second electrode layer 723. L product one Referring to FIG. H and FIG. 15, step% is performed, the sacrificial 728 is removed in a narrative manner, and the first and second electrode layers are formed into a capacitor by applying a bias to complete the preparation of the microphone chip 7. Finally, step 87 is performed, and the microphone chip 7 is packaged in a base 5 which can be accessed. The ancient-sweetened-and-connected base 5 and the field effect transistor 6 are electrically connected to complete the micro single chip. Manufacturing, as shown in Figure 3. The second preferred method of manufacturing the miniature single j i 4 ± π early male film 4 microphone of the present invention is the 13 5 10 15 20 I235〇io embodiment. As shown in FIG. 5, the miniature single chip microphone of the present invention can be manufactured. The miniature single-chip microphone 4 according to the second preferred embodiment of the present invention. Only the differences between this example and the first preferred embodiment described above will now be described. In this example, in step 82 of the above example, after the -electrode layer 721 is formed, -electret materials such as oxygen cutting, nitrogen cutting, and dragon cutting are used. M deposition or spin coating is used. The electret layer 727 is further formed on the first electrode layer 721; and in accordance with the formation of the electret layer 727, after the sacrificial layer 728 is removed in step 86, it is polarized, and the electret layer 727 is used to make the first, -Lei Weiwei_ An electrode layer 721, 723 constitutes an electret-type electric valley 'finished microphone chip 4'. Since the other steps are similar to the first preferred embodiment, they will not be repeated here. One prepared ”is a miniature single-chip microphone according to the third preferred embodiment of the above-mentioned miniature single-chip microphone of the present invention, and a third preferred embodiment of the manufacturing method of the miniature early-chip microphone of the present invention is Similar to the manufacturing process described in the first preferred embodiment, except that this example differs from step 81 in the above example. At the same time as the field effect transistor 6 is formed, it must be formed in two steps: a floating charge that can be stored. The electrode unit, and then cooperate with this: pre-moving the electrode sheet 7C, after removing the sacrificial layer by etching in step 86, a predetermined charge is provided by the floating electrode unit to make the first and second electrode layers 721 and-constitute a capacitor to complete the microphone Preparation of wafers. Since the other steps are similar to the first preferred embodiment, no further description will be given here. It can be known from the above 5 that the manufacturing method of the miniature single-chip microphones 4, 4 of the present invention is not applied to the engraving process, so the disadvantages of the conventional process that requires a long time to perform the bulk etching process can be greatly improved, and the method can be greatly improved. 14 1235010 The cost of manufacturing time in Lang Province is reduced to reduce the defective rate of the quality of the finished microphone. However, the above are only the two preferred embodiments of the present invention. When the scope of implementation of the present invention cannot be limited by this, that is, the simple equivalent changes made according to the scope of the present invention and the contents of the description of the invention ^ Modifications should still fall within the scope of the patent of the present invention. [Circular type brief explanation] FIG. 1 is a cross-sectional view illustrating the structure of a micro-chip microphone using a dual-chip microphone chip as one of the known ones; FIG. 2 is a cross-sectional view illustrating a micro-chip type using a single-chip microphone chip as one of the conventional ones Microphone structure; FIG. 3 is a cross-sectional view illustrating the structure of the first preferred embodiment of the miniature single-chip microphone of the present invention; FIG. 4 is a plan view to assist in explaining the first preferred of the miniature single-chip microphone of FIG. 3 Structure of the embodiment; FIG. 5 is a cross-sectional view illustrating the structure of the first preferred embodiment of the miniature single-chip microphone of the present invention; FIG. 6 is a flowchart illustrating the method of manufacturing the miniature single-chip microphone of the present invention First preferred embodiment; FIG. 7 is a cross-sectional view illustrating a micro-electro-mechanical system technology for manufacturing the miniature single-chip microphone shown in FIG. 3, and the corresponding state after implementing the steps of FIG. 6; FIG. 8 is a cross-sectional view, It is explained that a micro-electro-mechanical system technology is used to manufacture the miniature single-chip microphone shown in FIG. 3, and the corresponding state of _phase 15 1235010 after implementing the steps of FIG. 6 is shown in FIG. 9; View illustrating a micro-electro-mechanical system technology for manufacturing a miniature single-chip microphone as shown in FIG. 3, and the corresponding state after performing the steps of FIG. 6; 5 10 FIG. 10 is a top view θ W view of FIG. 9 6 to help explain a corresponding state after implementing the steps of FIG. 6; FIG. 11 is a cross-sectional view, sentence B day, t Λ. W Erming uses a micro-electromechanical system technology to manufacture a miniature single-chip type shown in FIG. 3 | Gufei microphone, a corresponding state after implementing the steps of FIG. 6; FIG. 12 is a full-scale development of one of FIG. 10 | ^ See the figure to help explain a corresponding state after implementing the steps of FIG. 6; 13 is a cross-sectional view, sentence BB, explaining that M-micro-electro-mechanical system technology manufactures a miniature single-chip Sangu ^ force eight microphone as shown in FIG. 3, a corresponding state after implementing the steps of FIG. 6; FIG. 14 is A cross-sectional view of the corresponding state of the micro single chip shown in FIG. 3; Appearance. 6 to assist in the implementation of the step 20 16 1235010 of the round type [Description of the representative symbols of the main components of the circle type] 1 > Γ Miniature chip microphone 35 electrode layer 200 field effect transistor 36 vibration space 300 base 4.4, miniature single chip microphone 400 circuit board 5 base 2 dual-chip microphone chip 51 housing 21 diaphragm wafer 52 bottom wall 211 electrode layer 53 outer wall 212 diaphragm 54 upper cover 213 partition block 55 electrode contact 22 back plate wafer 56 accommodation space 221 perforation 6 Field effect transistor 222 Back plate electrode layer 7.7, Microphone chip 223 Back air chamber layer 71 Substrate 23 Vibration space 72, 72, Induction section 24 Back air chamber 721 First electrode layer 3 Single-chip microphone chip 722 Separator block 30 $ 夕 substrate 723 Second electrode layer 31 Back air chamber layer 724 Vibration membrane 311 Back air chamber 725 Vibration space 32 Back plate electrode layer 727 Electret layer 321 Perforation 728 Sacrificial layer 33 Separation block 8 Manufacturing method 34 Vibration film 81 Step 17 1235010 82 step 85 step 83 step 86 step 84 step 87 step 18