TWI228282B - A method for fabricating disposable spacer - Google Patents

Abstract

A method for fabricating a disposable spacer is disclosed. In the method, a polymer layer is formed to cover a gate in an etcher, and the polymer layer is etched in the etcher by an in-situ method to form the disposable spacer on a sidewall of the gate. Then, a source/drain implantation step is performed, and the disposable spacer is removed by using O2 plasma.

Description

1228282

V. Description of the invention (1) [Technical field to which the invention belongs The present invention relates to a kind of material | 本 j

Spacer),, Λ (Iη-si tu) method to carry out high-coupling; take a hurry ^ ^ ^ ^ ea ^ ♦ The deposition of composite spacers can be considered a manufacturing method of disposable spacers. The "prior art" of "etching" is called ginseng ..., Fig. 1 to Fig. 4, Fig. I to Fig. 4, and sectional views of the manufacturing process of the partition wall. First, provide by Xi Xi (Si: =

100, and then a thermal oxidation method is used to form a Silicon Oxide thin film on the substrate 100 as the gate dielectric layer 102. After the growth of the gate dielectric layer 102 is completed, a polycrystalline silicon (p〇iysiiicOn) thin film (not shown) is formed by a deposition method to cover the gate dielectric layer 102. Reusing lithography and etching / The polycrystalline silicon film is defined in a engraved manner, and a part of the polycrystalline silicon film is removed and a part of the gate dielectric layer 102 is exposed, so as to form a gate 104 on the gate dielectric layer 102, as in 1 picture.

Next, a 'chemical vapor deposition (CVD) method or a thermal furnace method (Furnace method) is used to form a spacer material layer 106 in the chemical vapor deposition reaction chamber or furnace tube to cover the gate. Electrode 104 and exposed gate dielectric layer 102. Among them, the material of the spacer material layer 106 is generally made of silicon nitride oxide (Silicon Nitride) and oxide silicon oxide, as shown in FIG. 2. After the deposition of the spacer material layer 106 is completed, the substrate 100 with the structure thereon is moved to the etching chamber of the etching machine, and the spacer material layer

Page 5 1228282 V. Description of the invention (2) ___ An etching step is performed until the gate electrode 104 is exposed, and a spacer wall 108 is formed thereon. Complete the side wall of the spacer 1 08 on the side of the gate 丨 04 彳 ion implantation technology respectively • substrate i Q " shape J: the second plant 114, and the immortal 112, and formed as the third 3: 1 two and In the doped region, the remaining spacers are committed by way of the ion implantation method after the source electrode 110 and the dopant region 114 are completed, and the steps are completed. It can be used as shown in Figure 4. Therefore, the partition wall 108 is also referred to as the structure formed by the addition of '. However, the wall plant composed of nitrided stone or oxidized stone is called the partition wall. easy. Because the nitride stone or the oxide stone is composed of J = = 2 volume steps, a hardened sound will be formed on the surface of the gap wall (in the ion implantation layer). Under the influence of the hardened layer on the surface of the gap wall,: KWet Etching) successfully removes the gap wall by using: Dry Etching. When using the dry gap wall, this dry type ^^ or the structure of the fossil evening will damage the gate dielectric = rat (F) chemical layer and the quality of the substrate. Another :: layer = material 'affects the inter-electrode dielectric. The vapor deposition reaction chamber or furnace tube wall has to be studied separately, which has prolonged the cycle time and increased the complexity of the process. [Summary of the Invention] Therefore, 'the objective of the present invention is to make a method from Shexian County', which is based on the production of a base-based chemical containing a type of discarded bulkhead containing hydrocarbons, the second electrode and a lice gas (Cl2) and bromine. (Br) " Polymer layer is formed on the side wall of the gate electrode Page 6 I228282

V. Description of the invention (3), which is the material of the removable partition wall. Because the polymer = 2 is removed, the disposable wall can be removed smoothly without reducing the damage to the substrate and the electrode. ^ Said method: ^ Pro 2 :: In providing a manufacturing method of disposable wall spacers, the polymer and the wall spacers are deposited and etched in the same etching machine in a ^% manner. Because it is not necessary to switch the reaction chamber; „It can reduce the process cost and increase the production cost: Another purpose of the invention is to provide a disposable barrier wall method, which is a polymer polymerization in an etching machine The deposition of the material of the spacer wall can be changed to cover the step polymer capability of the knife polymer by adjusting the bias power of the etching machine (Bias power). According to the above object of the present invention, a kind of The manufacturing method of the disposable spacer comprises at least the following steps. First, a substrate is provided, wherein at least a gate electrode has been formed on the substrate. Then, a reactant is used to form a spacer material layer to cover the above. The gate electrode and the substrate, wherein the reactant includes a hydrocarbon-containing chemical. The reactant further includes at least a chlorine (C2) or bromine (Br) -based chemical. Then, a An etching step is performed on the above-mentioned spacer material layer on the spot, and a disposable spacer is formed on the side wall of the gate electrode. According to a preferred embodiment of the present invention, the step of forming the spacer material layer and the etching step All are performed in the same etching chamber. In addition, the above-mentioned carbon-containing hydrogen chemical may be carbon tetrafluoride (CL), trifluoromethane (CHf3), difluoromethane (Ch2 h), or fluoromethane (C ^ F ), And the flow rate of the hydrocarbon-containing chemical is preferably & between lOsccm to 200sccm. In addition, the above-mentioned chlorine or bromine-based chemistry

1228282 V. Description of the invention (4) The flow rate of the substance is preferably controlled between lOsccm and 20sccm, more preferably it is controlled between 30sccm and 50sccm. The step of forming the spacer material layer includes controlling at least Bias Power of the reaction chamber to be less than 20 watts (W). In addition, when performing the etching step, at least: using a monooxy (02 Base) chemical; using an additive, wherein the additive is preferably argon (Ar) or helium (He), or chlorine or hydrogen bromide; And preferably, the bias power of the reaction chamber is controlled between 10 watts and 200 watts. Among them, oxychemicals can also be substituted with ammonium (Nd2) or ozone (03). In addition, the flow rate of argon or helium is preferably controlled between 50 s c c m and 50 0 s c c m, and more preferably between 80 seec and 120 sccm. In a preferred embodiment of the present invention, the thickness of the 'partition wall material layer' is preferably between 100 A and 100 Å. Because the "oxygen plasma can easily remove the spacer formed by the polymer", plus the step of forming the spacer material layer and the step of embossing the spacer material layer are performed in the same etching chamber. Therefore, not only can the disposable spacer be effectively removed under the condition of reducing the damage to the substrate; it also simplifies the manufacturing process, but can reduce the manufacturing cost, and then can improve the manufacturing process. W. rtf " AAfc Q on JL ^ [Embodiment] The present invention discloses a method for manufacturing a disposable partition wall. The method is to perform deposition and etching of high-molecular polymers to make disposable products and improve the manufacturing process. It is easier; = 可 == Process cost, and reduce the damage to the substrate and the partition wall: soil-discarded partition wall, which makes the description of the present invention more

1228282 V. Description of the invention (5) J is complete and complete. 'You can refer to the following description and cooperate with Figures 5 to 8 / Figure 8, Figures 5 to 8 are shown in accordance with the present invention-preferably A cross-sectional view of the process of a disposable bulkhead through the example. First-a semiconductor substrate 200 is provided, in which the substrate 200 is stone. Furthermore, the thin gate electrode layer is covered on the substrate by means of, for example, thermal oxidation or chemical vapor deposition, and the material of the gate dielectric layer 202 may be, for example, oxidized stone. After the gate dielectric layer 202 is formed, a conductive material film (not shown) is formed to cover the substrate, such as by chemical vapor deposition. The conductive material film may be defined as a thin film of a polycrystalline material. Go to two ;: === ;: part of the gate dielectric layer 202, and on the gate 0; into _, as shown. After the gate electrode 204 is formed on the strategy 202, the substrate 200 is placed together with the structure thereon, and then the barrier material layer 2 204 and the gate dielectric layer 202 are formed by using a deposition method, such as Figure 6 shows. Among them, the engraving room of the surname Xiao may be, for example, a plasma shoe engraving room, and the material of the spacer material layer 206 formed is preferably a South molecular polymer such as an organic polymer and the spacer material layer 206 The thickness is preferably controlled between Wei and 1 000A. When forming the spacer material layer 206, at least the reactant 'J is included. The reactant includes at least the hydrocarbon-containing chemical lice gas chemistry, preferably carbon tetrafluoride, trifluoromethane, difluoride. Kakiyaki: Kakiyaki and Kakiyaki. In addition, 'formation wall material' 1228282 V. Description of the invention (6) The substance further includes at least chlorine or bromine-based chemicals. During the formation of the spacer material layer 206, it is preferable to control the flow rate of the hydrofluorocarbon-containing chemical between lOsccm and 20sccm, and the flow rate of the chlorine or bromine-based chemical is preferably controlled between lOsccm Between 200 sccm, the flow rate of chlorine or desert-based chemicals is better controlled between 30 sccm and 50 sccm, and the bias power of the etching chamber is preferably controlled to less than 20 watts to improve the barrier material layer. The step coverage ability of 206 'further avoids the occurrence of overhang. Next, in a field manner, the spacer material layer 206 is etched in the same etching chamber until the gate electrode 204 is exposed, and a spacer wall 208 is formed on the side wall of the gate electrode 204, as described in the first section. Figure 7 shows. The etching step may be an anisotropic etching (Anisotropic Etching) step. When performing the etching step of the spacer material layer 206, for example, an oxygen chemical can be used as a reactant to form an oxygen plasma, and it is preferable to control the bias power of the etching chamber to within 10 watts to 2 watts. In between, the shape of the partition wall 208 can be effectively controlled. Among them, the above-mentioned oxychemicals may be substituted by hydrazine or ozone. In addition, during the engraving step, Fa, 'may be performed by adding, for example, argon or helium, or chlorine or additives'. In the process, in the second step, the flow rate of argon or helium is preferably controlled between 50 sccm and Tai Cong m, and more preferably controlled between 80 sccm and 120 sccm. Room 4 @ ΐΐ To make use of the on-site method, it can be performed in the same etching room. ^ This can be deposited and etched in 11206 Because there is no need to change the reaction chamber, the process time is shortened, and the process cost is reduced.

1228282

V. Description of the invention (7) ΠΓ = ΐ 二 Γ For example, lithography, and ion implantation technology 212 electrode 210 and doped region 2 ", and non-electrode. Source 210 and doped region 214, and gap 208 have been formed. After completing its phased tasks, and after the pole 212, at this time, the remaining gap wall 208 is removed, and the remaining gap wall 208 is formed in the manner as described in the "?" Method, preferably a thorn, as shown in the figure. The structure is removed. Since the partition wall 208 is composed of J:!; Oxygen electropolymerization is used as a button to etch oxygen electrical equipment as the remaining chemical substance is composed of γ avoidance and H free matter. In the case of substrate 2., 顺 Λ :: ^ = Straight Main: 'Used to assist the source electrode 21, ^^ The gap wall 208 is inserted into 仃' When this ion implantation step is completed, the time J The wall can be removed. Therefore, the 'gap wall m' is also known as a disposable type: wind: ancestor: converged to use hydrocarbon-containing fluorochemicals and chlorine and bromine materials, so ::? High-molecular polymer as the gap The material of the wall 2 ° 8 is reduced, and the remaining gap wall 208 is smoothly removed with the lice plasma, and the damage of the gate dielectric layer 202 and the substrate 2◦ is further improved. The advantage of the present invention is because of the three materials. Therefore, the polymer can be easily removed by using an oxygen plasma = it can reduce the damage to the substrate and the gate dielectric layer. Σ: is the preferred embodiment of the present invention described above. It can be seen that another advantage of the present invention is that

Page 11 1228282 V. Description of the invention (8) The purpose is to deposit and etch on the same wall in the same way, without process, reducing process cost, and for process reliability. From the above, the present invention is preferably implemented to achieve a high score in the etching machine. By adjusting the step coverage capability of the etching machine, although the invention has been set with a better definition of the invention, anyone familiar with this range can be used as A variety of enclosures should be attached to the attached patent application-an etching machine for conducting polymer gaps to switch reaction chambers. Therefore, the production process can be simplified and the process time can be shortened, and further improvement can be achieved. It can be seen that ‘v Θ < another advantage of the present invention is due to the separation of the polymer polymer wall and other materials. Can be cleaned due to bias power. Γ achieves improved polymer polymerization. The embodiment is disclosed as above, but it is not intended to limit the scope of the invention without departing from the spirit and scope of the present invention.

Page 12 1228282 Brief description of the drawings [Simplified description of the drawings] Figures 1 to 4 are cross-sectional views showing the process of the conventional disposable wall. 5 to 8 are cross-sectional views showing a process of a disposable partition wall according to a preferred embodiment of the present invention. [Simple description of component representative symbols] 100 = substrate 102 104: gate 106 108: spacer 110 112: drain 114 200: substrate 202 204: gate 206

Gate dielectric layer gap wall material layer source doped region gate dielectric layer gap wall material layer 208: gap wall 2 1 2 • • drain 2 1 0: source 2 1 4: doped region

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Claims (1)

Case No. 92131592 of January 1228282 VI. Scope of Patent Application 1. A method for manufacturing a disposable barrier wall, including at least: providing a substrate, wherein at least one gate electrode has been formed on the substrate; using a reactant to form a gap A wall material layer covers the gate electrode and the substrate, wherein the reactant includes at least a hydrofluorocarbon-containing chemical and a chlorine gas or a molybdenum-based chemical; and the gap is formed in an in-situ manner. The wall material layer is subjected to an etching step, and the disposable spacer is formed on the side wall of the gate electrode. 2. The manufacturing method of the disposable partition wall as described in item 1 of the scope of patent application, wherein the material of the partition wall material layer is a polymer. 3. The manufacturing method of the disposable spacer according to item 1 of the scope of the patent application, wherein the step of forming the spacer material layer and the etching step are performed in an insect chamber. 4. The manufacturing method of the disposable partition wall according to item 1 of the scope of patent application, wherein the hydrofluorocarbon-containing chemical is selected from the group consisting of carbon tetrafluoride, trifluoromethane, difluoromethane, and fluoromethane A group of people. 5. The manufacturing method of the disposable partition wall as described in item 1 of the scope of the patent application, wherein the step of forming the partition wall material layer includes at least controlling the flow rate of the carbon-fluorine-containing chemical between lOsccm and 200 sccm . Page 14122828 _ Case No. 92131592_ Year Month Day ___ VI. Patent Application Range 6 · The manufacturing method of the disposable partition wall described in item 1 of the patent application range, wherein the step of forming the material layer of the partition wall At least the control bias power is less than 20 watts. 7. The manufacturing method of the disposable partition wall as described in the first patent application range, wherein the step of forming the partition wall material layer includes at least controlling the flow rate of the chlorine gas or the bromine-based chemical between 10 sccm and 20 0 sccm. 8. The manufacturing method of the disposable partition wall according to item 1 of the scope of patent application, wherein the step of forming the partition wall material layer includes at least controlling the flow rate of the chlorine gas or bromine-based chemical between 30 sccm and 50 sccm. 9. The manufacturing method of the disposable spacer according to item 1 of the scope of the patent application, wherein the etching step is an anisotropic etching step. 10. The method for manufacturing a disposable partition wall as described in item 1 of the scope of patent application, wherein the remaining step includes at least a monooxy chemical. 1 1. The manufacturing method of the disposable partition wall according to item 1 of the scope of the patent application, wherein the etching step includes at least the use of hydrazine. 1 2. The manufacturing method of the disposable partition wall according to item 1 of the patent application scope, wherein the etching step includes at least the use of ozone. Page 151228282 _: Case No. 92131592_ Year Month Amendment_ VI. Patent Application Range 1 3 · The manufacturing method of the disposable partition wall described in item 1 of the patent application range, wherein the etching step includes at least the use of An additive, and the additive is selected from the group consisting of argon or helium and chlorine or hydrogen bromide. 14. The manufacturing method of the disposable partition wall according to item 13 of the scope of patent application, wherein the flow rate of the argon or helium is between 50 s c c m and 50 0 s c c m. 15. The manufacturing method of the disposable partition wall according to item 13 of the scope of the patent application, wherein the flow rate of the argon or helium is between 80 s c cm to 120 s c cm. 16. The manufacturing method of the disposable partition wall according to item 1 of the scope of patent application, wherein the etching step includes at least controlling the bias power of the reaction chamber to be between 10 watts and 200 watts. 1 7. The manufacturing method of the disposable partition wall according to item 1 of the scope of patent application, wherein the thickness of the partition wall material layer is between 100 m and 100 m. 1 8. The manufacturing method of the disposable partition wall according to item 1 of the scope of the patent application, wherein the material of the partition wall material layer is an organic polymer. 1 9. A method for manufacturing a disposable barrier wall, comprising at least: providing a substrate, wherein at least a gate electrode has been formed on the substrate; forming a barrier material layer over a gate material using a reactant; and base Page 161228282 _ Case No. 92131592_ Amendment Date 6. The scope of the patent application, where the reactant includes at least one hydrocarbon-containing fluorochemical and one chlorine or bromine-based chemical; An oxychemical performs an etching step on the spacer material layer, and it is extravagant to form the disposable gap on the side wall of the gate. The disposable type described in item 19 of the scope of patent application A method for manufacturing a partition wall, wherein the material of the partition wall material layer is a high molecular polymer. 2 1. The manufacturing method of the disposable partition wall as described in item 19 of the scope of the patent application, wherein the step of forming the partition wall material layer and the etching step are performed in a remaining chamber. 2 2. The manufacturing method of the disposable partition wall as described in item 19 of the scope of patent application, wherein the hydrocarbon-containing fluorochemical is selected from the group consisting of carbon tetrafluoride, trifluoromethane, difluoromethane, and A group of fluoromethane. 2 3. The method for manufacturing a disposable barrier wall as described in item 19 of the scope of the patent application, wherein the step of forming the barrier wall material layer includes at least controlling the flow rate of the carbon-fluorine-containing chemical to be between 10 sccm to Between 2 0 0 sccm. To control the wall control gap, including enclosing the bag type, and discarding it to the bottom of the layer, the material of the layer described in the description layer 9 1 The wall gap is required to be conformed to the conformity, please refer to it, • Method 4 2-party power is less than 20 watts. Page 17 1228282 Case No. 92131592 Amendment VI. Application for Patent Scope 2 5. The manufacturing method of the disposable wall as described in item 19 of the scope of patent application, wherein the step of forming the material layer of the wall includes at least Control the flow of the chlorine or bromine-based chemical between 10 sccm and 2 0 sccm. 26. The manufacturing method of the disposable partition wall as described in item 19 of the scope of patent application, wherein the step of forming the material layer of the partition wall includes at least controlling the flow rate of the chlorine gas or the desert-based chemical between 30 sccm and 5 0 sccm. 2 7 · The manufacturing method of the disposable spacer according to item 19 of the scope of the patent application, wherein the etching step includes at least an additive, and the additive is selected from the group consisting of argon or helium, and chlorine or A group of hydrogen bromides. 28. The manufacturing method of the disposable partition wall according to item 27 of the scope of patent application, wherein the flow rate of the argon or helium is between 50 s c c m and 50 0 s c c m. 29. The manufacturing method of the disposable partition wall according to item 27 in the scope of the patent application, wherein the flow rate of the argon or helium is between 80 s c c m and 120 s c c m. 30. The manufacturing method of the disposable spacer according to item 19 of the scope of the patent application, wherein the etching step includes at least controlling the bias power of the reaction chamber to be between 10 watts and 200 watts. 3 I Manufacture of disposable wall as described in item 19 of the scope of patent application Page 18 1228282 _ case number 92131592 _ year month__ VI. Patent application method, wherein the thickness of the spacer material layer is between 100 m and 100 m. 3 2 · The manufacturing method of the disposable partition wall as described in item 19 of the scope of patent application, wherein the material of the partition wall material layer is an organic polymer. 3 3. —A method for manufacturing a disposable barrier wall, including at least: providing a substrate, wherein at least a gate electrode has been formed on the substrate; using a reactant to form a high polymer layer to cover the gate electrode And on the substrate, wherein the reactant includes at least a hydrofluorocarbon-containing chemical and a chlorine or bromine-based chemical; and an on-site method is used to etch the high molecular polymer layer Step, and forming the disposable gap wall on a side wall of the gate electrode. 34. The manufacturing method of the disposable partition wall according to item 33 of the scope of the patent application, wherein the step of forming the high polymer layer and the etching step are performed in a 14-etching chamber. 35. The manufacturing method of the disposable partition wall according to item 33 of the scope of patent application, wherein the hydrocarbon-containing fluorochemical is selected from the group consisting of carbon tetrafluoride, trifluoromethane, difluoromethane, and A group of fluoromethane. 36. Manufacture of disposable wall as described in item 33 of the scope of patent application Page 19, 1228282, Case No. 92131592, Amendment 6. Method for applying for a patent, wherein the step of forming the polymer layer includes at least controlling the flow rate of the hydrocarbon-containing chemical between 10 sccm and 2 0 sccm . 37. The manufacturing method of the disposable partition wall according to item 33 of the scope of the patent application, wherein the step of forming the high polymer layer includes at least controlling the bias voltage to less than 20 watts. * 3 8. The manufacturing method of the disposable partition wall as described in item 33 of the scope of patent application, wherein the step of forming the high polymer layer includes at least controlling the flow rate of the gas or bromine-based chemical to be between 1 and 1. 0 sccm to 2 0 0 sccm. 39. The manufacturing method of the disposable partition wall as described in item 33 of the scope of the patent application, wherein the step of forming the polymer layer includes at least controlling the flow rate of the chlorine gas or bromine-based chemical to be between 30 sccm To 50 sccm. 40. The method of manufacturing a disposable partition wall as described in item 33 of the scope of patent application, wherein the step I of engraving includes at least an additive, and the additive is selected from the group consisting of argon or helium, and A group of chlorine or hydrogen bromide. 41. The manufacturing method of the disposable partition wall according to item 40 of the scope of the patent application, wherein the flow rate of the argon or helium is between 50 s c c m and 50 0 s c c m. 42. The manufacturing method of the disposable partition wall as described in item 40 of the scope of patent application, wherein the flow rate of the argon or helium is between 80 s c cm to 120 s c cm. Page 201228282 _Case No. 92131592_Year Month Date__ VI. Patent Application Range 4 3 · The manufacturing method of the disposable partition wall described in Item 33 of the patent application range, wherein the etching step includes at least controlling the The bias voltage of the reaction chamber is between 10 watts and 200 watts. 44. The manufacturing method of the disposable partition wall according to item 33 of the scope of the patent application, wherein the thickness of the high polymer layer is between 100 and 100. Page 21