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TWI223081B - Peak voltage detector with output stage - Google Patents

Peak voltage detector with output stage Download PDF

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Publication number
TWI223081B
TWI223081B TW92113113A TW92113113A TWI223081B TW I223081 B TWI223081 B TW I223081B TW 92113113 A TW92113113 A TW 92113113A TW 92113113 A TW92113113 A TW 92113113A TW I223081 B TWI223081 B TW I223081B
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transistor
voltage
capacitor
charging
peak
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TW92113113A
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Chinese (zh)
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TW200424533A (en
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Ming-Chuen Shiau
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Hsiuping Inst Technology
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Abstract

A peak voltage detector having a novel framework is proposed in the present invention. The invention is composed of a differential amplifier 1, a charging transistor 2, a capacitor C and an output stage 3. The differential amplifier 1 is designed to have an asymmetric structure where only single side load transistor is used. In addition, the load transistor together with the charging-transistor 2 forms a current mirror. The differential amplifier 1 is used as a comparator. The charging transistor 2 is used as a charger to provide the required charging current for the capacitor. The output stage 3 is used to adjust the voltage signal V(C) of the capacitor C so as to accurately output the peak voltage of the inputted signal. In addition to accurately detecting the peak voltage of the inputted signal, the proposed peak voltage detector of the invention has multiple functions such as simple circuit structure, small chip-occupation area and advantage for device miniaturization. Additionally, an output stage is disposed so as to effectively prevent the held peak input voltage from being destroyed due to the access action of the external circuit.

Description

1223081 玖、發明說明: 【發明所屬之技術領域】 本發明係有關一種電壓峰值檢知器,尤指利用一差動放大器 (differential amplifier)、一充電電晶體(Charging transist〇r)、一電 容器以及一輸出級所組成以求獲得精確電壓峰值之互補式金氧半(CM〇s) 電子電路。 【先前技術】 電壓峰值檢知器係一種電子電路,能夠測得一電壓波形之最大值,質 §之’該電路之輸人為-變動之電壓信號’而其輸出則是該輪人電壓波形1223081 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a voltage peak detector, especially using a differential amplifier, a charging transistor, a capacitor, and A complementary metal-oxide-semiconductor (CM0s) electronic circuit composed of an output stage to obtain precise voltage peaks. [Prior art] The voltage peak detector is an electronic circuit that can measure the maximum value of a voltage waveform. The quality of the circuit is “input-variable voltage signal of this circuit” and its output is the voltage waveform of the human.

在纤夕應用中,輸入電壓信號之峰值必須被測出,然後將之以直流 型態保留住以便後續分析、使用。一個脈衝串之尖峰值常比它的平均值 更有用,例如當執行破壞性測試時,就有必要追尋出並保持峰值 量測,壓信號在傳輸媒介上之衰減量、類比至數位轉換器⑽c〇;jte likeiih〇〇d dec〇ding 先前技藝(prior art)巾,賴峰值紛ϋ鮮作法 城=二極體,而對電容充電,以便取得該輸人電壓波形之峰值。In fiber evening applications, the peak value of the input voltage signal must be measured, and then it should be kept in the DC type for subsequent analysis and use. The peak value of a burst is often more useful than its average value. For example, when performing a destructive test, it is necessary to track down and maintain the peak measurement. The amount of attenuation of the pressure signal on the transmission medium, analog to digital converter ⑽c 〇; jte likeiih 〇d dec〇ding Prior art towels, relying on peaks and seldom do tricks = diodes, and charge the capacitor in order to obtain the peak value of the input voltage waveform.

如弟-圖二示,當輸入電壓v⑽大於電容器c之電壓時,二鋪^ ^ ,丁充電作用’直到輸入糕v(_達其最大值,電 H ΐ時輸出電壓聊T)即表示輸人糖⑽之峰值。° " 如第二圖所,圖 不可預測之後果。 有斤差異,可此v致不良之影響或 為了 _確_輸人之峰值魏,另—_之先前技藝係使用 5 1223081 了由二個運算放大器0P1和〇P2、二個二極體D1和敗、二個電阻器ri和 R2、以及一個電容器c來構成一電壓峰值檢知器,如第三圖所示;其〇^仙 PSp1Ce之暫態分析模擬結果,如第四圖所示。其中,〇ρι是一個精^的 波整流器,當輸入電壓卿)大於電容電壓V(C)時,二極體_傳送偏 電容器C1進行充電,最後電容電壓v(c)將會與輸入電壓八以)之峰值電壓 =當接近,所檢測出的輸出電游⑽Τ)也會與輸入電辦⑽之峰值龍相 當接近’不會再有如第二圖所示於輸出端與輸人端之間存在—二極體導通 電壓Vd之誤差。而當輸入電壓^⑽小於電容電游⑹時,二極體敗將 會導通,二極體D1將會截止而不再對電容器c進行充電之動作,這使得 檢測出的輸出電壓V(0UT)會等於輸入電壓八⑺)之峰值電壓。雖說第三圖之 電麼峰值檢知器能精確地檢測出峰值電壓,但其電路结構複雜、佔用的曰晶 片面積大,實不利於積體電路之要求。 曰曰 迄今,有許多電壓峰值檢知器之技術被提出,例如於美國專利案 聊304939、5502746、5546027、、5969545、6051998、6064238 和 6472861 號乂及中華民國專利案第88220146號中所揭露者均是,該等技術均能精確 地檢測,入信號之峰值電麼,但由於該等電壓峰值檢知器均使用到一個以 上之運算放大器,因此存在有電路結構複雜、佔_晶片面積大等缺失。 最近有成種不品使用到運算放大器之精密電塵峰值檢知器之技術被 列如中華民國專利案第90119722和議1188號中所揭露者即是, 4等技術係以-差動放大器和—電流鏡所組成的電路來取代運算放大器, 由於並不使用到運算放大器,因此,具備電路結構簡單、佔用的晶片面積 it及有利1裝置之小型化等多重功效。但由於該等技術所使用之差動放 有寸稱之兩個負載電晶體,且使用獨立之電流鏡,因此,在減少電 ,值所需之電晶體數量方面仍有改良空間存在。此外,該等技術 齋於值檢知器中设置輸出級,輸出級於所檢知之輸入峰值電壓被外部 潘路擷取時可有效保持該輸入峰值電壓,不致於因願取動作而降低 遭受破壞。 · 甘此’本發明主要目的係提出一種新穎架構之電壓峰值檢知器, /、不但把精確地檢_輸人錄之峰值賴,並且兼具轉結構簡單、佔 6 1223081 用的晶片面積小以及有利於裝置之小型化等多重功效,同時亦設置有輪出 級以有效防止S外部電路之娜動作而遭致破壞聽持之輸场值電壓。 【發明内容】 本發明所提出之電壓峰值檢知器係由一差動放大器i、一充電電晶體 2、-電容器C以及-輸出、級3所組成,其中,該差動放大器係以非對稱式 結構來料’亦即僅使用單邊之貞銳晶體,且該貞載電晶體與該充電電 晶體共同構成-電流鏡,因此可較傳統之精密電壓峰值檢知器少二個簡s 電晶體。此外,本發明所提出之電壓峰值檢知器設置有輸出級,因此不但 能避免所保持之輸人峰值電壓不致因外部電路之擷_作而遭致破壞,同 時兼具精確地調整並輸出所保持之輸入峰值電壓之功能。 【實施方式】 根據上述之目的,本發明提出一種新穎之電壓峰值檢知器,如第五圖 所示,其係由一差動放大器1、一充電電晶體2、一電容器^;以及一輸出級3 所組成,该差動放大器1是使用非對稱性之電路組態來設計,其係由蘭呢電 晶體腿、MN2和MN3,以及PM0S電晶體MP1所組成,其中,該_s電晶體MN1 和MN2係做為驅動器(driver)使用,PM0S電晶體ΜΠ係作為負載電晶體使 用,而NM0S電晶體Μ剛提供-參考電流給該差動放大器使用。該_s電晶 體MN1和MN2之閘極(gate)係分別接受輸入電壓信號V(IN)及電容器上之電 壓信號V(C),源極(source)連接在一起,並連接至NM〇s電晶體MN3之汲極 (drain),而其汲極則分別與負載電晶體Μρι及電源供應電壓vdd相連接;該 NM0S電晶體MN3之閘極與電源供應電壓Vdd連接,而源極則接地。 請再參考第五圖,負載電晶體MP1與充電電晶體MP2共同構成一電流 鏡,且該PM0S電晶體MP1和MP2之源極均與電源供應電壓vdd連接,而閘極 則連接在一起,並連接至NM0S電晶體MN1之汲極,同時該pm〇S電晶體MP1之 閘極與汲極係連接在一起,以形成一電流鏡;再者,pM〇s電晶體Mp2之汲極 係與電容器C之一端連接,而該電容器C之另一端則接地;此外,輸出級3係 由一NM0S電晶體MN4以及一電阻器R所組成,並連接在電源供應電壓Vdd與接 地之間。 當輸入電壓V(IN)大於電容器上之電壓ν(〇時,電流id (MN1)會大於 7 1223081As shown in the second figure, when the input voltage v⑽ is greater than the voltage of the capacitor c, the second shop ^ ^, D charging action 'until the input cake v (_ reaches its maximum value, the output voltage when the electric H 聊 T) means the output. The peak of human sugar. ° " As shown in the second picture, the picture has unpredictable consequences. There are differences, but this can cause adverse effects or to determine the peak value of the lost person. In addition, the previous technique used 5 1223081. Two operational amplifiers 0P1 and 0P2, two diodes D1 and The two resistors ri and R2 and one capacitor c constitute a voltage peak detector, as shown in the third figure; the simulation results of the transient analysis of PSp1Ce are shown in the fourth figure. Among them, 〇ρι is a precise wave rectifier. When the input voltage is larger than the capacitor voltage V (C), the diode_transmission capacitor C1 is charged, and finally the capacitor voltage v (c) will be equal to the input voltage. The peak voltage of () = When approached, the detected output electric game (T) will also be quite close to the peak dragon of the input office. 'There will no longer exist between the output terminal and the input terminal as shown in the second figure. -Error of diode on voltage Vd. When the input voltage ^ ⑽ is smaller than the capacitor voltage, the diode will be turned on, and the diode D1 will be turned off and the capacitor c will no longer be charged. This makes the detected output voltage V (0UT) It is equal to the peak voltage of the input voltage. Although the electric peak detector of the third figure can accurately detect the peak voltage, its circuit structure is complicated and the occupied area of the chip is large, which is not conducive to the requirements of the integrated circuit. So far, many voltage peak detector technologies have been proposed, such as those disclosed in U.S. Patent Cases Nos. 304939, 5502746, 5560027, 5969545, 6051998, 6064238, and 6462861, and the Republic of China Patent Case No. 88219066 All of them, these technologies can accurately detect the peak voltage of the incoming signal, but because these voltage peak detectors use more than one operational amplifier, there are complex circuit structures and large chip area. Is missing. Recently, a variety of inaccurate precision dust detectors using op amps have been listed as disclosed in the Republic of China Patent Case No. 90119722 and No. 1188. The 4th class technology is -differential amplifier and- The circuit composed of the current mirror replaces the operational amplifier. Since the operational amplifier is not used, it has multiple functions such as a simple circuit structure, an occupied chip area it, and a favorable miniaturization of the device. However, because the differential amplifiers used in these technologies are called two load transistors and use independent galvanometers, there is still room for improvement in reducing the number of transistors required for power and value. In addition, these technologies set up an output stage in the value detector. The output stage can effectively maintain the input peak voltage when the detected input peak voltage is captured by an external pan, so as not to reduce the damage caused by the desired action. . · This is the main purpose of the present invention is to propose a novel voltage peak detector with a novel architecture, which not only accurately detects the peak value of the input signal, but also has a simple transfer structure and a small chip area of 6 1223081. And it is conducive to multiple functions such as miniaturization of the device. At the same time, a wheel-out stage is also provided to effectively prevent the operation of the external circuit of the S from causing damage to the voltage value of the listening field. [Summary of the invention] The voltage peak detector provided by the present invention is composed of a differential amplifier i, a charging transistor 2, a capacitor C, and an output, and a stage 3. The differential amplifier is asymmetric The structure is based on the material, that is, only one-sided zenith crystal is used, and the zener-carrying transistor and the charging transistor together form a current mirror, so it can be two less than the traditional precision voltage peak detector. Crystal. In addition, the voltage peak detector provided by the present invention is provided with an output stage, so it can not only prevent the held input peak voltage from being damaged due to the capture of external circuits, but also accurately adjust and output all The function of keeping the input peak voltage. [Embodiment] According to the above object, the present invention provides a novel voltage peak detector, as shown in the fifth figure, which is composed of a differential amplifier 1, a charging transistor 2, a capacitor ^; and an output It is composed of stage 3. The differential amplifier 1 is designed using an asymmetric circuit configuration. It is composed of a blue transistor leg, MN2 and MN3, and a PM0S transistor MP1. Among them, the _s transistor MN1 and MN2 are used as drivers, the PMOS transistor MΠ is used as a load transistor, and the NMOS transistor M just provides a reference current to the differential amplifier. The gates of the _s transistors MN1 and MN2 respectively receive the input voltage signal V (IN) and the voltage signal V (C) on the capacitor. The sources are connected together and connected to NM〇s. The drain of the transistor MN3 is connected to the load transistor Μρι and the power supply voltage vdd respectively; the gate of the NMOS transistor MN3 is connected to the power supply voltage Vdd, and the source is grounded. Please refer to the fifth figure again, the load transistor MP1 and the charging transistor MP2 together form a current mirror, and the source of the PM0S transistor MP1 and MP2 are connected to the power supply voltage vdd, and the gate is connected together, and Connected to the drain of NM0S transistor MN1, and the gate and drain of the PM0S transistor MP1 are connected together to form a current mirror; furthermore, the drain of pM0s transistor Mp2 and the capacitor One terminal of C is connected, and the other terminal of the capacitor C is grounded. In addition, the output stage 3 is composed of an NMOS transistor MN4 and a resistor R, and is connected between the power supply voltage Vdd and the ground. When the input voltage V (IN) is greater than the voltage ν (〇) on the capacitor, the current id (MN1) will be greater than 7 1223081

Id (MN2),且 (1)Id (MN2), and (1)

Id (MN1) + Id (MN2) = id (MN3) 又Id (MN1) + Id (MN2) = id (MN3) and

Id (MN1 ) = -Id (MP1 ) ⑵ 由於PMOS電晶體MP1及MP2係構成—電流鏡,因此 -Id (MP1) = -Id (MP2) (3) ’故可對電容器C進行充電動作。 當電容器上之電壓V(C)等於輸入電壓V(IN)之峰值電壓時,電流 Id (MN1) = Id (MN2) = y Id (MN3) (4) ’此時仍會對電容器C進行充電動作。 依據差動放大器之轉移特性曲線得知:電容器上之電壓v(c)須較輸入 峰值電壓νΡ—過-超量電壓(〇verSh(X)tVc)itage_v〇s)才能將^jM〇s電 晶體MN1強迫城止狀g,f應電晶麵丨絲止織、時,充電電晶體即 停止對電容器c進行充電作用,此時電容器上之電壓v(c)為 V (C) =Vpeak + V〇S ⑸ 由於此時的NM0S電晶體MN2係工作於飽和區,而NM0S電晶體MN1恰由飽 和區進入截止區,因此,可由下列方程式求出VGS2&VGS1 : ⑹ ⑺Id (MN1) = -Id (MP1) ⑵ Because the PMOS transistor MP1 and MP2 are constituted by a current mirror, -Id (MP1) = -Id (MP2) (3) ′, the capacitor C can be charged. When the voltage V (C) on the capacitor is equal to the peak voltage of the input voltage V (IN), the current Id (MN1) = Id (MN2) = y Id (MN3) (4) 'At this time, the capacitor C will still be charged action. According to the transfer characteristic curve of the differential amplifier, it is known that the voltage v (c) on the capacitor must be greater than the input peak voltage vp—over-overvoltage (〇verSh (X) tVc) itage_v〇s) in order to convert ^ jM〇s The crystal MN1 forces the stop g, f should be on the crystal surface. When the wire is stopped, the charging transistor stops charging the capacitor c. At this time, the voltage v (c) on the capacitor is V (C) = Vpeak + V〇S ⑸ Because the NM0S transistor MN2 works in the saturation region, and the NM0S transistor MN1 enters the cut-off region from the saturation region, VGS2 & VGS1 can be obtained from the following equation: ⑹ ⑺

Id (MN2) = Id (MN3)Id (MN2) = Id (MN3)

Id (MN1) = 0 故超量電壓Vos等於Id (MN1) = 0 so the excess voltage Vos is equal to

Vos= VGS2 - VGS1 (8) 之後,當輸入電壓V (IN)由峰值電壓Vpeak往下掉時,因NM0S電晶體MN1 已進入截止狀態,因此電流 -Id (MP1) = -Id (MP2) = 0 ⑼ 所以充電電晶體不會再對電容器C進行充電動作,因此電容器上之電壓%〇 仍會固定維持在方程式(5)之電壓。 請再參考第五圖,電容器上之電壓V(C)扣抵一個NM0S電晶體mm之閘源 極電壓VGS4後’即成為電壓峰值檢知器之輸出電壓ν(〇υτ),亦即 V(OUT) - V(C) - VGS4 (10) 8 1223081 接著,由方程式(5)及(10)得知,欲使輸出電壓V(0UT)等於輸入峰值電 壓Vpeak,貝丨J須 VGS4 = Vos (11) 最後,由於NM0S電晶體MN4之汲極電流Id(MN4)係為閘源極電壓VGS4以 及汲源極電壓VDS4之函數,因此,輸出級3中之NM0S電晶體丽4之通道寬長 比(W/L)以及電阻器R之電阻值广必須滿足下列方程式: (Vdd - VDS4)/r = Id(MN4) (⑵ 藉此即可輕易地設計出電壓峰值檢知器。 卜本發明所提出之電壓峰值檢知器之OrCADPSpice暫態分析模擬結果,如 第六、七圖所示,其可精確且有效地檢知輸入電壓波形之峰值電壓。第六、 七圖係以0· 35微米CMOS製程參數加以模擬,且PM0S電晶體MP1、MP2以及NM0S 電晶體臟、丽2之通道寬長比均為(W/LM0· 35μιη/0· 35卿),NM0S電晶體MN3 之通道寬長比為(W/LH0· 35μπι/0_ 35μπι*30),NM0S電晶體丽4之通道寬長 比為(¥/1>(25*0.35_/0.35卿),而電阻器1?之電阻值則為0.7_欠姆至 1· 25Μ歐姆之間。 本發明之電壓峰值檢知器在使用時可於電容器c兩端並聯連接一開 關,該開關係用以提供—放電路徑,以便將電容器上所儲存之電荷放電, 俾利於下次輸入電壓信號之峰值檢測。 【發明功效】 本發明所提出之電壓峰值檢知器,僅使用了2個pM〇s電晶體和^@NM〇s 電晶體以及1個電容H和丨個電阻器,其不但祕雜繼、鮮、使用的 電晶體數ΐ少、佔用的晶片面積少,並且可以精確地檢知輸人電壓波形之 峰值,同時,由於本發明之電壓峰值檢知器並不使用到運算放大器,因而 也有利於裝置之小型化;此外,由於本發明所提出之電壓峰值檢知器設置 有輸出級,因此亦能避免所保持之輸入峰值電壓不致因外部電路之擷取動 作而遭致破壞,同時兼賊確地調整並輸麟麟之輸人峰值電壓之功能。 雖然本發明制揭露並描述了所選之最佳實施例,但舉凡熟悉本技術 之人士可明瞭任何形式或是細節上可能的變化均未脫離本發明的精神與範 圍。因此,所有相關技術範蜂内之改變都包括在本發明之申請專利範圍内。 9 1223081 【圖式簡單說明】 =圖係顯示第—先前技藝巾電壓雜檢知器之電路圖; 仏㈣信號之暫 第三圖係顯示第二先前技藝中電壓峰值檢知器之電路圖; :信號之暫 第四圖係顯示第三圖電壓峰值檢知器之輸人電壓信號 態分析時序圖; 阳电座h ‘號之第 ,五圖係齡本發崎佳實補之賴雜檢知器之電路 第六=:;電序壓圖峰值檢知器― 第七圖壓圖峰值檢知器之輸入電壓信號及輪㈣ [元件符號說明] 2 充電電晶體 V(IN)輸入電壓信號 V(〇UT)輸出電壓信號 D 一極體 D2 —極體 R2 電阻器 0P1運算放大器 MP1第一 PM0S電晶體 MN1第一 NM0S電晶體 MN3第三NM0S電晶體 Vdd電源供應電壓 1 差動放大器 3 輸出級 V(C)電容器上之電壓信號 c 電容器 D1二極體 R1電阻器 R 電阻器 0P2運算放大器 MP2第二PM0S電晶體 MN2第二NM0S電晶體 MN4第四NM0S電晶體 10Vos = VGS2-VGS1 (8), when the input voltage V (IN) drops from the peak voltage Vpeak, because the NM0S transistor MN1 has entered the cut-off state, the current -Id (MP1) = -Id (MP2) = 0 ⑼ Therefore, the charging transistor will no longer charge capacitor C, so the voltage% on the capacitor will remain fixed at the voltage of equation (5). Please refer to the fifth figure again. After the voltage V (C) on the capacitor deducts the gate-source voltage VGS4 of a NM0S transistor mm, it becomes the output voltage of the voltage peak detector ν (〇υτ), which is V ( OUT)-V (C)-VGS4 (10) 8 1223081 Next, we know from equations (5) and (10) that if the output voltage V (0UT) is to be equal to the input peak voltage Vpeak, we must VGS4 = Vos ( 11) Finally, since the drain current Id (MN4) of the NM0S transistor MN4 is a function of the gate-source voltage VGS4 and the drain-source voltage VDS4, the channel width-to-length ratio of the NM0S transistor Li 4 in the output stage 3 (W / L) and the resistance value of the resistor R must satisfy the following equations: (Vdd-VDS4) / r = Id (MN4) (⑵ With this, the voltage peak detector can be easily designed. The present invention The OrCADPSpice transient analysis simulation results of the proposed voltage peak detector are shown in Figures 6 and 7, which can accurately and effectively detect the peak voltage of the input voltage waveform. Figures 6 and 7 use 0 · 35 microns The CMOS process parameters are simulated, and the PM0S transistors MP1, MP2, and NM0S transistors are dirty, and the channel width-to-length ratio of Li 2 is (W / LM0 · 3 5μιη / 0.35), the channel width-length ratio of the NM0S transistor MN3 is (W / LH0 · 35μπι / 0_ 35μπι * 30), and the channel width-length ratio of the NM0S transistor Li4 is (¥ / 1 > (25 * 0.35_ / 0.35), and the resistance value of the resistor 1? Is between 0.7_um and 1.25M ohm. The voltage peak detector of the present invention can be connected in parallel with a switch at both ends of the capacitor c when in use This open relationship is used to provide a discharge path to discharge the charge stored on the capacitor, which is beneficial to the peak detection of the next input voltage signal. [Effect of the invention] The voltage peak detector proposed by the present invention only uses 2 pM0s transistors and ^ @ NM〇s transistors, and 1 capacitor H and 丨 resistors, which not only have a small number of relays, are fresh, use a small number of transistors, occupy a small area of the chip, and can Accurately detect the peak value of the input voltage waveform. At the same time, because the voltage peak detector of the present invention does not use an operational amplifier, it is also conducive to the miniaturization of the device. In addition, the voltage peak detection proposed by the present invention The device is equipped with an output stage, so it can also avoid the The input peak voltage will not be damaged due to the capture action of the external circuit, and at the same time, it will also adjust and input the peak input voltage function of Linlin. Although the present invention discloses and describes the selected preferred embodiment, However, anyone skilled in the art can understand that any form or detail of possible changes does not depart from the spirit and scope of the present invention. Therefore, all changes in the related technical scope are included in the scope of patent application of the present invention. 9 1223081 [Brief description of the diagram] = The diagram shows the circuit diagram of the voltage miscellaneous detector of the prior art towel; the third diagram of the signal is the circuit diagram of the voltage peak detector of the second prior technique;: signal The fourth figure is the timing chart of the input voltage signal analysis of the third peak voltage detector. The sixth circuit of the circuit = :; the peak voltage detector of the electric sequence pressure graph peak detector-the input voltage signal and the wheel of the peak pressure detector of the seventh graph [component symbol description] 2 charging transistor V (IN) input voltage signal V (〇 UT) output voltage signal D pole body D2-pole body R2 resistor 0P1 operational amplifier MP1 first PM0S transistor MN1 first NM0S transistor MN3 third NM0S transistor Vdd power supply voltage 1 differential amplifier 3 output stage V ( C) Voltage signal on the capacitor c Capacitor D1 Diode R1 Resistor R Resistor 0P2 Operational amplifier MP2 Second PM0S transistor MN2 Second NM0S transistor MN4 Fourth NM0S transistor 10

Claims (1)

1223081 拾、申請專利範圍: 1. 一種電壓峰值檢知器,用以檢測輸入電壓信號之峰值,其包括: 一輸入端,用以提供一輸入電壓信號; 一輸出端’用以輸出該輸入電壓信號之峰值電壓; 一電源供應電壓,用以提供電壓峰值檢知器所需之電源電壓和參考接地; 一具單邊負載電晶體之差動放大器1,用以接受並比較輸入電壓信號及電 容器上之電壓信號,並提供充電電流信號給充電電晶體; 一充電電晶體2,用以根據該差動放大器1之單邊負載電晶體所流過之電 流量’而提供一與該電流量等量之充電電流給電容器; 一電容器C,該電容器之一端連接至充電電晶體2,以便接受該充電電晶 體2所供應之充電電流,而另一端則連接至參考接地;以及 一輸出級3,連接在電容器c之一端與該電壓峰值檢知器輸出端之間,用 以調整電容器C上之電壓信號,以便精確地輸出該輸入電壓信號之峰值電 壓。 2·如申請專利範圍第1項所述之電壓峰值檢知器,其更包括: 一開關,遠開關係與該電容器並聯連接,用以提供一放電路徑,以便將 電容器上所儲存之電荷放電,俾利於下次輸入電壓信號之峰值檢測。 3.如申請專利範圍第2項所述之電壓峰值檢知器,其中該開關係由一金氧半 電晶體所組成。 4·如申請專利範圍第1項所述之電壓峰值檢知器,其中該具單邊負載電晶體p 之差動放大器1包括: 一單邊負載電晶體,其係由第一PM0S電晶體MP1所組成,該第一PM0S電晶 體MP1之源極連接至電源電壓,閘極與汲極連接在一起,並連接至充電電 晶體2之閘極; 一第一NM0S電晶體丽1,其源極與第二麵08電晶體丽2之源極以及第三 NM0S電晶體MN3之汲極相連接,閘極用以接受輸入電壓信號,而汲極則與 該充電電晶體2之閘極以及該第一 PM0S電晶體MP1之汲極相連接; 一第二NM0S電晶體丽2,其源極與第一NM〇s電晶體丽1之源極以及第三 NM0S電晶體丽3之沒極相連接,閘極用以接受電容器上之電壓信號,而沒 11 1223081 極則連接至電源電壓;以及 一第三NM0S電晶體丽3 ’其源極連接至參考接地,閘極連接至電源電壓, 而没極則與第一以及第二NM0S電晶體腿和丽2之源極相連接; 體顧2之閘極相連接; 而該輸出級3包括: 该充電電晶體2係由第二PM0S電晶體MP2所組成,該第二PM0S電晶體MP2 之源極連接至電源電壓,祕與帛—p廳電㉟體腦之酿以及第一 電晶體MN1之汲極相連接,而汲極則與該電容器之一端以及第二臓電晶1223081 Patent application scope: 1. A voltage peak detector for detecting the peak value of an input voltage signal, comprising: an input terminal for providing an input voltage signal; an output terminal for outputting the input voltage The peak voltage of the signal; a power supply voltage to provide the power supply voltage and reference ground required by the voltage peak detector; a differential amplifier 1 with a unilateral load transistor to accept and compare the input voltage signal and the capacitor And a charging current signal to the charging transistor; a charging transistor 2 for providing a current amount and the like according to the amount of current flowing through the unilateral load transistor of the differential amplifier 1; A capacitor C; one end of the capacitor is connected to the charging transistor 2 so as to receive the charging current supplied by the charging transistor 2 and the other end is connected to a reference ground; and an output stage 3, Connected between one end of the capacitor c and the output of the voltage peak detector to adjust the voltage signal on the capacitor C so as to accurately Peak output voltage of the input voltage signals. 2. The voltage peak detector according to item 1 of the scope of patent application, further comprising: a switch connected in parallel with the capacitor in a far-open relationship to provide a discharge path for discharging the charge stored on the capacitor It is good for the peak detection of the next input voltage signal. 3. The voltage peak detector according to item 2 of the scope of patent application, wherein the open relationship is composed of a gold-oxygen semiconductor. 4. The voltage peak detector according to item 1 of the scope of the patent application, wherein the differential amplifier 1 with a single-sided load transistor p includes: a single-sided load transistor, which is a first PM0S transistor MP1 The source of the first PM0S transistor MP1 is connected to the power supply voltage, the gate and drain are connected together and connected to the gate of the charging transistor 2; a first NMOS transistor Li 1 and its source It is connected to the source of the second transistor 08 and the drain of the third NMOS transistor MN3. The gate is used to receive the input voltage signal, and the drain is connected to the gate of the charging transistor 2 and the first A drain of the PM0S transistor MP1 is connected; a source of the second NMOS transistor Li 2 is connected to the source of the first NMOS transistor Li 1 and the third electrode of the third NMOS transistor Li 3, The gate is used to receive the voltage signal from the capacitor, and the 121223081 pole is connected to the power supply voltage; and a third NMOS transistor is connected to the reference ground, the gate is connected to the power supply voltage, and the pole Connected to the first and second NMOS transistor legs and the source of Li 2; The gate of body 2 is connected; and the output stage 3 includes: The charging transistor 2 is composed of a second PM0S transistor MP2, and the source of the second PM0S transistor MP2 is connected to the power supply voltage. —The p-cell electrical brain is connected to the drain of the first transistor MN1, and the drain is connected to one end of the capacitor and the second transistor 一電阻器R ’該電阻ϋ係連接在該電壓峰值檢知器 翁出端,閘極連接至電容器之一 而汲極則與電源電壓相連接;以 一電阻器R, 之間。 之輸出端與參考接地 12A resistor R 'is connected to the output of the voltage peak detector. The gate is connected to one of the capacitors and the drain is connected to the power supply voltage. A resistor R is connected between them. Output terminal and reference ground 12
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