TWI222725B - Flip-chip package bonding structure and the manufacturing method thereof - Google Patents

Abstract

The present invention provides a flip-chip package bonding structure and the manufacturing method thereof, which is to form the insulative film on the contact side between the chip and the substrate. The contacts may be the conductive bumps or pads. The insulative film is used to isolate the electrical conduction from the side for preventing the short circuit effect between contacts arising from the aggregation of conductive particles of conductive adhesive. The present invention is applied in flip-chip packaging of devices with thin line width and thin pitch using conductive adhesive.

Description

1222725 5. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a flip-chip bonding structure and a method for manufacturing the same, and particularly to a flip-chip bonding structure using an anisotropic conductive adhesive. And its manufacturing method. " [Previous Technology]

With the development trend of electronic products toward lighter, thinner, shorter, smaller, higher speed and higher performance, the requirements of semiconductor component mounting technology for increasing component guilt, joining, reducing, and reducing component size continue to increase. Therefore, traditional wire bonding is gradually being replaced by f Π p-chip technology. The flip-chip mounting technology is to form a solder ball array (array oc soeder ball) or a conductive bump at the joint surface of the wafer and the substrate to replace the lead frame used in the conventional mounting technology. The array of solder balls (array 〇f s〇lder α) is directly bonded between the bonding surface of the wafer and the substrate.

ball) or conductive bumps to achieve circuit conduction, which can reduce the electronic signal transmission distance between the chip and the substrate, and is suitable for packaging high-speed components. The conventional covering = construction method is to form a conductive bump structure on the surface of the wafer and the substrate, and then apply an adhesive on the surface of the substrate; then, the conductive bumps on the surface of the wafer and the substrate are aligned. Press to complete the flip-chip structure. When an adhesive is used to bond the wafer and the substrate, the two have a severe difference in expansion coefficient. When the temperature changes, the effect of thermal stress can easily deform the conductive bump contacts of the wafer and the substrate. In order to reduce the difference between the adhesive, the substrate and the wafer: the difference in thermal expansion coefficient and increase the strength of the contact, appropriate particles can be mixed in the adhesive to adjust the contact

1222725 V. Description of the invention (2) Difference in thermal expansion coefficient of the adhesive, and appropriate concentrated conductive particles can be added to the adhesive to form an anisotropic conductive adhesive (Anis〇tr〇pic-of

Conductive Film, ACF). However, in the case of extremely fine pitch, the conductive particles of the square conductive adhesive are easily gathered on the side of the contact, and the adjacent contact is short-circuited. Therefore, the applicable line width and interval are applicable. [Summary of the Invention] In order to solve the problems of the prior art, the present invention provides a composite structure and a method for manufacturing the same. The wafer is connected to the bathroom to prevent contact between the contacts due to the conductive adhesive. The structure of the bonding structure can be applied = the element flip-chip structure of the distance. The present invention discloses a composite structure using anisotropic conductive bonding and its manufacturing method, which utilizes the beauty of the component = J 日 日 日 架 1 border membrane compartment in contact, which side must "guide ^ ς ^ electrically insulating flanking concubine side contacts directly overlying the conductive adhesive barrier structure is formed by a plurality of substrate, and the anisotropic element which flip chip package board engaging surface The bonding pads are used as the substrate = 基板,: a plurality of conductive bumps are formed on the two sides, and the conductors are electrically conductive, and the springs are formed. The conductive bumps are pressed against the a of the substrate to form an insulating film. Continuity; & Contains a plurality of conductors; Particle 2: Forms the substrate and the component 1 and fills the joint area between the substrate and the component to electrically connect: if the adhesive 'system', In addition, the present invention further includes a substrate With components. 、, Manufacture method of clothing joint structure ’

Page 6 1222725 V. Description of the invention (3) It is based on the above components and bases. Bonding pads; a plurality of conductive bumps are formed on the surface of each lightning guide and anisotropic conductive is coated on the surface. ; At the same time, the substrate is bonded to the surface of the conductive conductive bonding pads, and the short-circuit is caused by curing the different pads, so the child may also be deposited on the bonding film of the substrate. The following describes an insulating layer on the side of the bonding pads of the substrate. S: ί ^ The purpose, structural features, and functions of the bismuth profile are described in detail below: [Embodiment] According to the present invention >; @ s method 'is to solve the problem of using a different bonding structure and its manufacturing side, which are easy to produce when the pitch is reduced. The connection agent is used to bond the component to the substrate. The structure and assembly structure, especially the bonding between the wafer and the substrate, is a schematic structure, which includes the electric bumps 11 of the first embodiment of the present invention, and the sun-dried film 100, the surface of which The side with a plurality of conductive A ^ 2 private bumps 110 has an insulating film in; — 0, and the surface has a plurality of (a 1 followed by an adhesive 120, which is a polymer material containing conductive particles 121 5 μm substrate 20 0). Are connected in a face-to-face manner to make a plurality of conductive bumps

Page 7 1222725 V. Description of the invention (4) 1 Two individual: Two-in- plurality of joints 塾 21 ° above to form electrical conduction. Such as conductive bumps or bonding pads, the side of the contacts of the Pi board, Yu, bean jealousy wax, forming ,,,,,,,,,,,, and 彖 film. Depending on the process or application, the range =: knife cloth can be adjusted according to the application. For example, if it is only applied to the surface of the contact surface and only the joint is exposed, it is filled in the gap between each joint. Please refer to Fig. 2 and Fig. 3 /, the schematic diagram of the distribution of the insulation film for this example. As shown in FIG. 2, the insulating film is formed around the conductive bump 110. The person on the surface of the film 100 / the third person ΛΛ shows that the insulating film ⑴ is formed on the entire surface of the wafer 100, that is, filled in each of the guides S # Λ Pick Ί Π + electric block 1 The gap between 10 and 10 only exposes the conductive joint surface of the electric bump 110. ^ Please refer to the structure of the film of ΓΓΛ can be produced in a variety of ways, and it is also called / brother diagram, which is a schematic diagram of the manufacturing process of the insulation film. It is used in conjunction with the first film technology to make an insulating film. As shown in Fig. 4, a Byinn ... conductive bump 11 is provided. And, on the wafer and the 100V surface: ‘a plurality of ln, nh, and nh wafers 100 are coated on the surface with a photoresist material as the insulating film 111, and the conductive bumps 11 () are completely and completely covered. The bulge highlights the area of the electrical bonding surface where the conductive bump 11 0 on the surface of the wafer 100 is exposed using the mask 130. Develop the pattern of the photoresist material as shown in Figure 6 to form an insulating film ⑴ on the side of no, and expose the conductive f surface of the conductive bump 11G. ° In addition, the insulating film can also be formed by mechanical polishing after plating, please

Page 8 1222725 V. Description of the invention (5) Figure fI Figure 5 T figure ′ This is a sound chart of the manufacturing process of the insulating film. As shown in FIG. 7, a y 1ηπ non-grid conductive bump 110 is provided, and a plurality of insulating film ore semiconductor insulating materials are formed on the surface of the wafer as the Wang Fufu conductive bump 110. As shown in FIG. 8 'the mechanical and mechanical grinding is performed with a grinding wheel until the conductive bumps are exposed, and the electrical bumps are 5 = 2. As shown in FIG. 9', the richness of the conductive joint surface of the conductive bump 110 is removed. :: Behind the layer 100, the surface of the wafer 100 is formed to cover the surface of the edge film m and the conductive bumps 10 are exposed. The side of the conductive junction electric convex ghost H0 is matched with the insulating film process and the material of the edge film is coated. The region can be used as a junction mounting structure on the side of a κ v electrical bump and its manufacturing method is available: on the exposed flip-chip, and it is particularly suitable for the bonding of liquid crystal display substrates or flexible substrates. ', /, Dn's driver chip and glass stone moon refer to Figure 10, which is an endeavor for this development. First, provide a one-day film, a detailed process of the / tf brother κ (step 310). A plurality of conductive bumps are formed on the surface (Iv step 3 1 0). Secondly, a substrate is provided and the pads are bonded to the piezoelectric bumps (step 320); an insulating film is formed on the surface of the wafer, and a plurality of film systems are used to cover the conductive layer. The sides of the bumps and the conductive bumps are exposed (33 °), the anisotropy containing conductive particles is then insulated Conductive bonding ^ bonding surface; pad, and then align the wafer and the substrate and align the solidified block to form a flip-chip bonding structure (step 350). — F-connector, the substrate described in the form can choose organic

Page 9 1222725 V. Description of the invention (6) Substrate, ceramic substrate 'Glass substrate, silicon substrate or gallium arsenide substrate, etc. The anisotropic conductive adhesive can also be selected from heat-curable polymer-based adhesives, light-curable polymer-based adhesives or other adhesive materials, and the materials can be cured by heating, exposure or microwave. Since conductive particles may also be deposited between the bonding pads of the substrate and cause a short circuit, an insulating film may also be formed on the side of the bonding pads of the substrate. In the manufacturing process of the present invention, the step of forming an insulating film on the substrate is further included. Cover the sides of the bonding pad and expose the conductive bonding surface of the bonding pad. Please refer to FIG. 11, which is a schematic structural diagram of a second embodiment of the present invention. The wafer 丄 ⑽ 2 0 is bonded in a face-to-face manner so that a plurality of conductive bumps 110 i I are pressed onto a plurality of bonding pads 2 i 0 to form electrical conduction. On the side of the wafer contact, including the conductive bump 11 and the bonding pad 21, ^ 11 and 211 are formed to prevent the short circuit caused by the aggregation of the conductive particles of the anisotropic conductive adhesive 120.卩 ρ ΐ The preferred embodiment of the present invention is disclosed as described above, however. It is not a sample, a scholar, Ben Maoming 'Any person skilled in the relevant arts will not depart from the Γΐ 5 of the present invention. 4 Qianwei must be defined by the scope of the patent application attached to this specification

Page 10 1222725 Brief description of the drawings. Figure 1 is a schematic diagram of the structure of the first embodiment of the present invention; Figures 2 and 3 are schematic diagrams of the distribution of the insulating film of the present invention; Figures 4 to 6 are the production of the insulating film Schematic diagrams; Figures 7 to 9 are schematic diagrams of the manufacturing process of the insulating film; Figure 10 is a manufacturing flowchart of the first embodiment of the present invention; and Figure 11 is a structural schematic diagram of the second embodiment of the present invention. [Illustration of Symbols] 100 wafers 110 conductive bumps 111 insulating film. 120 conductive adhesive 130 photomask 140 grinding wheel 121 conductive particles 200 substrate 210 bonding pad 211 insulating film step 3 10 Provide a wafer to form a plurality on its surface Step 3 2 0 providing a substrate, forming a plurality of bonding pads on the surface thereof step 3 3 0 forming an insulating film on the surface of the wafer step 3 4 0 covering the substrate with an anisotropic conductive adhesive containing conductive particles 3 5 0 Alignment bonding wafer and substrate to cure anisotropic conductivity

Page 11 1222725

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Claims (1)

1222725 VI. Application for patent scope 1 · A flip-chip bonding structure including a substrate, the surface of which is formed with a plurality of conductive lines, and the bonding pad is used as a component of the substrate, and the surface is formed with a plurality of conductive Λ Including: the surface is provided with an-insulating film to isolate its lateral direction = ,: the conductive bumps are pressed against the plurality of bonding pads, f is ¥, the plurality is electrically connected to the component; and M is electrically connected The substrate is an anisotropic conductive adhesive, and the anisotropic conductive adhesive is applied to the substrate and the solid conductive particles, and the substrate and the element are bonded. , Μ element joint area 2: · The scope of patent application! The name of the flip-chip structure mentioned in item = Yi margin film is the photoresist material and the insulation structure, of which 3. one of the flip-chip structure + person and order as described in item 丨 of the scope of patent application. The insulating film is filled in the spaces between the conductive bumps σ,, and °, and the sides of the bumps are formed. The gap is covered by the conductive 4. As described in item 范围 of the patent application, the covered crystal structure Pei Shecuo measures the side of the bonding pad is covered with a bonding pad insulation film. 5. The material system of the flip-chip structure bonding f-junction insulation film as described in item 4 of the scope of patent application & photoresist material and insulation material 6. of the scope of patent application The flip-chip structure is used for bonding and bonding the bonding pad insulation film between the bonding pads and the sides of the bonding pads.丨 Yong Yi plate cover § 19 7 · The flip-chip bonding structure described in item 1 of the patent application scope, where 1222725 6. Scope of patent application m ΐ, is a liquid crystal display driver chip. 8. As claimed in the patent scope! The substrate is selected from the group consisting of an organic substrate, a rear / structural bonding structure, and a group consisting of a gallium halide substrate, and two of its substrates, a silicon substrate. 9. As described in the first patent application Fu Yue. The hetero-f conductive adhesive is one selected from among the cured fluorene molecular-based adhesives. Soil bonding agent and light 10.—A component structure used to provide electrical connection, using anisotropic lightning technology in installation. 丨 From the electronic structure: fine pitch Flip-chip structure, including components; one of several patents for gas-conducting conductive films. The patent scope is covered by the patent guide, the patent scope is reversed electricity 1 1. Such as the application structure material 12. If the application structure gap is covered 1 3. Such as the application structure 1 4. Such as the application Structural electrical bumps are formed on the surface of the element; and are formed on the side of the conductive Λ block to isolate the side of the side of item 10 which is used to provide electrical connection. It is a photoresist material and one of the π " " human ,,, and 6 edge material surroundings, which is used to provide electrical connection. The insulating film is a 3 electric bump filled between the conductive bumps. Block side. The element used to provide electrical connection as described in Item 10 is a liquid crystal display driver chip. The element for providing electrical connection described in Item 10 is a base plate. 1222725 VI. Application patent scope 1 5-A method for manufacturing a flip-chip bonding structure, the steps include: providing an element to form a plurality of conductive bumps on its surface; providing a substrate to form a plurality of surfaces on its surface A bonding pad; forming an insulating film on the side of the conductive bump; coating an anisotropic conductive adhesive on the surface of the substrate; aligning the conductive bump with the bonding pad pressed on the surface of the substrate; and curing the mouth plate The anisotropic conductive connection 16. 17. The method for manufacturing a flip-chip bonding structure as described in item 5 of the patent application scope, wherein the step of forming an insulating film on the side of the conductive bump 'is the insulating film The gaps between the conductive bumps are filled to cover the sides of the conductive bumps. 18.19. The method for manufacturing a flip-chip bonding structure described in item 15 of the scope of patent application, wherein the step of forming an insulating film on the side of the conductive bump is a photolithography method on the conductive This insulating film is formed on the side of the bump. = The method for manufacturing a flip-chip structure according to item 15 of the patent scope of the application, wherein the step of forming an insulating film on the side of the conductive bump = is attached to the component. An insulating layer is deposited on the surface, and then applied. The insulating layer on the surface of the conductive bump is removed by chemical mechanical polishing to form the insulating film covering the side surface of the conductive bump. ^ The method for manufacturing a flip-chip mounting bonding structure described in item 15 of the scope of patent application, which further includes forming a bonding pad insulating film on the substrate ^ Page 15 1222725 6. Scope of Patent Application Steps. 20. The method for forming and bonding a flip-chip structure according to item 19 of the scope of application for a patent, wherein the step of forming the second side and the second side of the bonding pad is to fill the insulating film with the second joint; : Film to cover the side of the bonding pad. Gap, 21 ΐ 专 Special: The method for making a flip-chip bonding structure described in item 19, wherein the step of forming a human garment on the side of the bonding pad is a method of photolithography on the bonding 塾 = Second, the edge film pad insulation film.接合 Side formation of the joint 22. The method for manufacturing a flip-chip bonding structure as described in the application item 19 of the scope of the application, wherein the step of forming the joint on the side of the joint—the bonding pad insulation =, is attached to the substrate. An insulating layer is deposited on the surface, and the surface of the bonding pad is removed by chemical mechanical grinding to form a bonding pad insulating film covering the side of the bonding pad in the shape of Λ. And 2 3 · The flip-chip mounting method as described in item 19 of the patent application scope, wherein the anisotropic conductive is cured and then added. & u ^ From the step of joining the element and the substrate, it is selected from the group consisting of heating, exposure knife, and imitation wave method. 々