TWI220566B - Flip chip package and method for producing the same - Google Patents
Flip chip package and method for producing the same Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 235000012431 wafers Nutrition 0.000 claims description 134
- 239000000463 material Substances 0.000 claims description 23
- 239000000945 filler Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 239000003292 glue Substances 0.000 description 6
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 6
- 239000011800 void material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
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Abstract
Description
1220566 五、發明說明(1) 【發明所屬之技術領域】 本發明係有關於一種覆晶封裝構造及其製造方法。 【先前技術】 隨著更輕更複雜電子裝置需求的日趨強烈,晶片的速度 及複雜性相對越來越高,因此需要更高之封裝效率 (packaging efficiency) ° 微型 4匕(miniaturization)是 使用先進封裝技術(例如晶片尺寸級封裝(c h i p s c a 1 e package)以及覆晶(flip chip))的主要驅動力。相較於 球格陣列封裝或薄小輪廓封裝(t h i n s m a 11 〇 u 11 i n e package, TSOP)而言’晶片尺寸級封裝以及覆晶這兩種技 術均大幅增加封裝效率,藉此減少所需之基板空間。一般 而言,一個晶片尺寸級封裝大約比晶片本身大百分之二 十,然而覆晶被描述為終極之封裝技術因為其大約與晶片 本身一樣大。該晶片本身係直接利用固設於晶片上之錫鉛 凸塊(solder bump)與基板(substrate)進行接合。 由於該晶片與基板熱膨脹係數差異相當大(半導體晶片 之熱膨脹係數(coefficient of thermal expansion, CTE)約為2-5ppm tr1,基板之熱膨脹係數(CTE)約為 18 - SOppniC1) ’因此該晶片與基板間一般具有一填膠 (u n d e r f i 1 1 )用以密封該錫鉛連接間之空隙。該填膠可以 減輕在錫鉛連接上的熱膨脹係數不一致所導致的應力。 第1圖以及第2圖係圖示一習用之填膠步驟。一般而言, 係利用一自動化點膠系統(a u t〇m a t e d u n d e r f i 1 1 d i s p e n s e s y s t e m )(未示於圖中)將填膠材料1 0 2點在該晶1220566 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a flip-chip package structure and a manufacturing method thereof. [Previous technology] With the increasing demand for lighter and more complex electronic devices, the speed and complexity of the chip are relatively higher and higher, so higher packaging efficiency is required ° Miniaturization is the use of advanced The main driving force of packaging technologies (such as chipscae package and flip chip). Compared with the ball grid array package or thin outline package (thinsma 11 〇u 11 ine package, TSOP), the two technologies of "wafer-scale package and flip chip" significantly increase the packaging efficiency, thereby reducing the required substrate space. In general, a wafer-scale package is approximately 20% larger than the wafer itself, but flip chip is described as the ultimate packaging technology because it is approximately as large as the wafer itself. The wafer itself is directly bonded to a substrate using a tin-lead bump fixed on the wafer. Because the difference between the thermal expansion coefficient of the wafer and the substrate is quite large (the coefficient of thermal expansion (CTE) of the semiconductor wafer is about 2-5 ppm tr1, and the coefficient of thermal expansion (CTE) of the substrate is about 18-SOppniC1) 'So the wafer and the substrate Underfill 1 1 is usually used to seal the gap between the tin-lead connection. This glue can reduce the stress caused by the inconsistent thermal expansion coefficient on the tin-lead connection. Figures 1 and 2 illustrate a conventional glue filling step. Generally speaking, an automated dispensing system (a u t〇m a t e d u n d e r f i 1 1 d i s p e n s e s s s t e m) (not shown) places the filler material at 102 points on the crystal.
00707.ptd 第6頁 1220566 五、發明說明(2) 片1 0 4之一側邊邊緣1 0 4 a。然後該填膠材料1 0 2經由毛細作 用吸到晶片1 0 4之下而完成填膠製程。然而,習用的覆晶 封裝構造中錫鉛凸塊多是均勻地分佈於該半導體晶片的整 個下表面,或是分佈於該半導體晶片下表面的周圍。如第 1圖所示,當該填膠材料1 0 2經由毛細作用填充於該晶片與 該基板之間時,靠近該晶片1 0 4邊緣的該填膠材料1 0 2流動 比靠近該晶片1 0 4中央的填膠材料1 0 2流動快。因此,如第 2圖所示,當周圍的填膠材料1 0 2到達晶片之另一側邊邊緣 1 0 4 b時,會開始向中央移動,產生「回包」現象,形成孔 隙(v 〇 i d ) 1 0 6。而這些孔隙1 0 6將會導致晶片1 0 4及基板之 間的機械以及電性連接(即錫鉛連接)的可靠性降低。 【發明内容】 因此,本發明之主要目的在於提供一種覆晶封裝構造及 其製造方法,其可克服或至少改善前述先前技術的問題。 根據本發明之覆晶封裝構造,其包含一基板、一半導體 晶片其具有複數個凸塊(b u m p )電性以及機械性連接於該基 板以及一填膠。該半導體晶片具有兩相對邊緣(ο ρ ρ 〇 s i n g e d g e s )。本發明之特徵係為該凸塊係排列成一梯形圖案。 換而言之,該些凸塊係在該半導體晶片上界定出一晶片接 點區,且該晶片接點區係呈一梯形圖案。更具體地說,該 梯形圖案具有一對大致與該半導體晶片的兩相對邊緣平行 且彼此平行的邊。該複數個凸塊係以一條穿過該半導體晶 片的兩相對邊緣個別之中點的線為基準而互相對稱排列。 本發明另提供一種用以製造該覆晶封裝構造的方法。首00707.ptd Page 6 1220566 V. Description of the invention (2) One of the side edges of the piece 1 0 4 1 0 4 a. The glue filling material 102 is then sucked under the wafer 104 through the capillary action to complete the glue filling process. However, in the conventional flip-chip package structure, most of the tin-lead bumps are evenly distributed on the entire lower surface of the semiconductor wafer or around the lower surface of the semiconductor wafer. As shown in FIG. 1, when the filling material 1 2 is filled between the wafer and the substrate via capillary action, the flow ratio of the filling material 1 0 2 near the edge of the wafer 104 is close to the wafer 1 0 4 The central filling material 1 2 flows quickly. Therefore, as shown in Figure 2, when the surrounding filler material 102 reaches the other side edge 1 0 4 b of the wafer, it will start to move to the center, resulting in a "backpacking" phenomenon, forming a void (v 〇 〇 id) 1 0 6. These pores 106 will cause the reliability of the mechanical and electrical connection (ie, the tin-lead connection) between the wafer 104 and the substrate to decrease. SUMMARY OF THE INVENTION Therefore, a main object of the present invention is to provide a flip-chip package structure and a manufacturing method thereof, which can overcome or at least improve the problems of the foregoing prior art. The flip-chip package structure according to the present invention includes a substrate, a semiconductor wafer having a plurality of bumps (bump) electrically and mechanically connected to the substrate and a filler. The semiconductor wafer has two opposite edges (ο ρ ρ s yn g e d g e s). The invention is characterized in that the bumps are arranged in a trapezoidal pattern. In other words, the bumps define a wafer contact area on the semiconductor wafer, and the wafer contact area has a trapezoidal pattern. More specifically, the trapezoidal pattern has a pair of sides that are substantially parallel to and parallel to two opposite edges of the semiconductor wafer. The plurality of bumps are symmetrically arranged with respect to each other based on a line passing through individual midpoints of two opposite edges of the semiconductor wafer. The invention further provides a method for manufacturing the flip-chip package structure. first
00707.ptd 第7頁 1220566 五、發明說明(3) 先,將前述之半導體晶片置放在一基板上。具體地說,該 半導體晶片具有相對的第一以及第二邊緣以及複數個凸塊 排列成一梯形圖案(即是該些凸塊於該半導體晶片上界定 一梯形之晶片接點區),該梯形圖案具有平行的第一以及 第二邊(s i d e ),該第一以及第二邊係大致與該半導體晶片 的第一以及第二邊緣平行。該梯形圖案的第一邊係靠近該 半導體晶片的第一邊緣但是遠離該半導體晶片的第二邊 緣。該梯形圖案的第一邊係較該第二邊長,並且該複數個 凸塊係以一條穿過該半導體晶片的第一以及第二邊緣個別 之中點的線為基準而互相對稱排列。較佳地,該複數個凸 塊之間具有大致相同的間距(pitch) ’並且該梯形圖案在 第一邊具有較第二邊多的凸塊。 接著,回銲該半導體晶片之凸塊藉此將該半導體晶片電 性以及機械性連接於基板。 在回銲步驟之後將一填膠材料沿著該半導體晶片的第一 邊緣點膠(dispense)使得該填膠材料從該半導體晶片的第 一邊緣導入並措由毛細現象填滿該半導體晶片以及該基板 之間的間隙。 根據本發明之半導體晶片上的凸塊係排列成一梯形圖案 (即是該些凸塊於該半導體晶片上界定一梯形之晶片接點 區),當注入填膠時,該填膠係先被點膠於該梯形圖案的 較大的底邊(即兩互相平行邊),再經由毛細現象向另一個 車父小的底邊流動並填滿該基板以及該半導體晶片之間的間 隙。當填膠材料慢慢向較小的底邊流動時,在該半導體晶00707.ptd Page 7 1220566 V. Description of the Invention (3) First, the aforementioned semiconductor wafer is placed on a substrate. Specifically, the semiconductor wafer has opposite first and second edges and a plurality of bumps arranged in a trapezoidal pattern (that is, the bumps define a trapezoidal wafer contact area on the semiconductor wafer). The trapezoidal pattern The first and second sides are parallel, and the first and second sides are substantially parallel to the first and second edges of the semiconductor wafer. The first edge of the trapezoidal pattern is close to the first edge of the semiconductor wafer but far from the second edge of the semiconductor wafer. The first side of the trapezoidal pattern is longer than the second side, and the plurality of bumps are symmetrically arranged with respect to each other based on a line passing through individual midpoints of the first and second edges of the semiconductor wafer. Preferably, the plurality of bumps have substantially the same pitch 'and the trapezoidal pattern has more bumps on the first side than on the second side. Next, the bumps of the semiconductor wafer are re-soldered to thereby electrically and mechanically connect the semiconductor wafer to the substrate. Dispense a filler material along the first edge of the semiconductor wafer after the re-soldering step so that the filler material is introduced from the first edge of the semiconductor wafer and fills the semiconductor wafer with a capillary phenomenon and the Gap between substrates. The bumps on the semiconductor wafer according to the present invention are arranged in a trapezoidal pattern (that is, the bumps define a trapezoidal wafer contact area on the semiconductor wafer). When the filler is injected, the filler is first spotted. Glue to the larger bottom edge of the trapezoidal pattern (that is, two mutually parallel edges), and then flow to the smaller bottom edge of the other driver via the capillary phenomenon and fill the gap between the substrate and the semiconductor wafer. When the filler material slowly flows to the smaller bottom edge,
00707.ptd 第8頁 1220566 五、發明說明(4) 片周圍流動的填膠材料與在該半導體晶片中央流動的填膠 材料流動速度大致一致。因此可減少前述之填膠步驟中的 「回包」現象,以克服或是至少改善填膠中的孔隙問題, 以提南半導體晶片及基板之間的機械以及電性連接(即錫 鉛連接)的可靠性。 【實施方式】 第3圖以及第4圖所示為根據本發明一實施例之覆晶封裝 構造3 0 0。該覆晶封裝構造3 0 0主要包含一基板3 0 2、一具 有複數個凸塊(例如銲錫凸塊或是其他金屬凸塊)3 0 4之半 導體晶片3 0 6以及一填膠3 0 8。 更具體地說,該基板302具有複數個接墊(contact pads) 3 0 2 a,該半導體晶片3 0 6之凸塊3 0 4係分別對準該基 板3 0 2之接墊3 0 2a並且電性以及機械性連接於該基板3 0 2。 由於該晶片與基板熱膨脹係數差異相當大(半導體晶片 之熱膨脹係數(coefficient of thermal expansion, CTE)約為2-5ppm XT1,基板之熱膨脹係數(C T E )約為 1 8-30ppm °C—i ),因此該半導體晶片3 0 6與基板3 0 2間具有 一填膠(underfi 1 1 ) 3 0 8用以密封該半導體晶片3 0 6與基板 3 0 2之空隙。該填膠3 0 8可以減輕在該半導體晶片3 0 6與基 板3 0 2的熱膨脹係數不一致所導致的應力。 參照第4圖,該半導體晶片3 0 6具有兩相對邊緣 (opposing edges)306a以及306b。本發明之特徵係為該凸 塊3 0 4係排列成一梯形圖案4 0 0。換而言之,該些凸塊30 4 於該半導體晶片上界定一呈一梯形圖案之晶片接點區。具00707.ptd Page 8 1220566 V. Description of the Invention (4) The filling material flowing around the wafer and the filling material flowing at the center of the semiconductor wafer flow at approximately the same speed. Therefore, the “backpacking” phenomenon in the aforementioned filling step can be reduced to overcome or at least improve the void problem in the filling step, so as to improve the mechanical and electrical connection between the semiconductor wafer and the substrate (ie, tin-lead connection). Reliability. [Embodiment] FIGS. 3 and 4 show a flip-chip package structure 300 according to an embodiment of the present invention. The flip-chip package structure 3 0 0 mainly includes a substrate 3 2 2, a semiconductor wafer 3 0 6 having a plurality of bumps (such as solder bumps or other metal bumps) 3 0 4 and a filler 3 0 8 . More specifically, the substrate 302 has a plurality of contact pads 3 0 2 a. The bumps 3 0 4 of the semiconductor wafer 3 0 6 are respectively aligned with the contact pads 3 0 2a of the substrate 3 0 2 and Electrically and mechanically connected to the substrate 3 02. Because the difference between the coefficient of thermal expansion of the wafer and the substrate is quite large (the coefficient of thermal expansion (CTE) of the semiconductor wafer is about 2-5ppm XT1, and the coefficient of thermal expansion (CTE) of the substrate is about 1 8-30ppm ° C-i), Therefore, an underfill 1 1 8 is provided between the semiconductor wafer 3 06 and the substrate 3 02 to seal the gap between the semiconductor wafer 3 06 and the substrate 3 2. The filler 3 0 8 can reduce the stress caused by the thermal expansion coefficients of the semiconductor wafer 3 6 and the substrate 3 2 being inconsistent. Referring to FIG. 4, the semiconductor wafer 3 06 has two opposing edges 306a and 306b. The present invention is characterized in that the bumps 3 0 4 are arranged in a trapezoidal pattern 4 0 0. In other words, the bumps 30 4 define a wafer contact region in a trapezoidal pattern on the semiconductor wafer. With
00707.ptd 第9頁 1220566 五、發明說明(5) 體地說,該梯形圖案4 0 0具有一對邊4 0 2以及4 0 4,其中該 邊4 0 2係大致與該半導體晶片3 0 6的邊緣3 0 6 a平行,該邊 404係大致與該半導體晶片306的邊緣306b平行並且邊402 以及4 0 4係彼此平行。該複數個凸塊3 0 4係以一條穿過該邊 4 0 2以及4 0 4之中點的線40 6 (在本實施例中,該線4 0 6亦穿 過該半導體晶片的兩相對邊緣3 0 6 a以及3 0 6 b個別之中點) 為基準而互相對稱排列。較佳地,該複數個凸塊3 0 4之間 具有大致相同的間距(p i t c h ),並且該梯形圖案4 0 0在該 邊402具有較該邊404多的凸塊304。 本發明另提供一種用以製造該覆晶封裝構造的方法。首 先,將前述之具有梯形分布之凸塊304半導體晶片306置放 在一基板3 0 2上。 接著,回銲該半導體晶片3 0 6之凸塊3 0 4藉此將該半導體 晶片3 0 6電性以及機械性連接於基板3 0 2。 在回銲步驟之後利用一自動化點膠系統將一填膠材料沿 著該半導體晶片3 0 6的邊緣3 0 6 a點膠(d i s p e n s e )使得該填 膠材料3 0 9從該半導體晶片3 0 6的邊緣3 0 6 a導入並藉由毛細 現象填滿該半導體晶片3 0 6以及該基板3 0 2之間的間隙。 根據本發明,半導體晶片3 0 6上的凸塊3 0 4係排列成一梯 形圖案4 0 4,當注入填膠材料時,該填膠材料係先被點膠 於該梯形圖案404的較大的底邊402(即兩互相平行邊),再 經由毛細現象向另一個較小的底邊4 0 4流動並填滿該基板 3 0 2以及該半導體晶片3 0 6之間的間隙。當填膠材料慢慢向 較小的底邊4 0 4流動時,因為呈梯形分佈之凸塊3 0 4可減緩00707.ptd Page 9 1220566 V. Description of the invention (5) In detail, the trapezoidal pattern 4 0 0 has a pair of sides 4 2 2 and 4 0 4, wherein the side 4 2 is roughly the same as the semiconductor wafer 3 0 The edge 3 0 6 a of 6 is parallel, the edge 404 is substantially parallel to the edge 306 b of the semiconductor wafer 306, and the edges 402 and 4 0 4 are parallel to each other. The plurality of bumps 3 0 4 is a line 40 6 passing through the midpoint of the edges 4 2 and 4 0 4 (in this embodiment, the line 4 6 also passes through two opposite sides of the semiconductor wafer). The edges 3 0 6 a and 3 6 b are individually centered) as a reference and are arranged symmetrically to each other. Preferably, the plurality of bumps 3 0 4 have substantially the same pitch (pi t c h), and the trapezoidal pattern 4 0 0 has more bumps 304 on the side 402 than the side 404. The invention further provides a method for manufacturing the flip-chip package structure. First, the aforementioned bump 304 semiconductor wafer 306 having a trapezoidal distribution is placed on a substrate 300. Next, the bump 3 0 4 of the semiconductor wafer 3 0 6 is re-soldered, whereby the semiconductor wafer 3 6 is electrically and mechanically connected to the substrate 3 2. After the reflow step, an automated dispensing system is used to dispense a filler material along the edge 3 0 6 a of the semiconductor wafer 3 0 6 a so that the filler material 3 0 9 is removed from the semiconductor wafer 3 0 6 The edge 3 0 6 a is introduced and fills the gap between the semiconductor wafer 3 6 and the substrate 3 2 by a capillary phenomenon. According to the present invention, the bumps 3 0 4 on the semiconductor wafer 3 6 are arranged in a trapezoidal pattern 4 0 4. When a filler material is injected, the filler material is first dispensed onto the larger one of the trapezoidal pattern 404. The bottom edge 402 (that is, two mutually parallel edges) flows through the capillary phenomenon to another smaller bottom edge 4 0 4 and fills the gap between the substrate 3 02 and the semiconductor wafer 3 06. When the filling material slowly flows to the smaller bottom edge 4 0 4, the bumps 3 0 4 with a trapezoidal distribution can slow down.
00707.ptd 第10頁 1220566 五、發明說明(6) 分佈在該半導體晶片3 0 6周圍的填膠材料的流動速度使得 其與分佈在該半導體晶片3 0 6中間的填膠材料的流動速度 相當,,使得該填膠材料的波前(f r ο n t f 1 〇 w )較為一致。 藉此可減少先前技術填膠步驟中的「回包」現象(如第5圖 所示),以克服或是至少改善填膠中的孔隙問題,以提高 半導體晶片3 0 6及基板3 0 2之間的機械以及電性連接的可靠 性。 本發明提供一種半導體晶圓,其具有複數個陣列排列的 半導體晶片。該半導體晶片具有一主動表面設有複數個晶 片銲墊。該半導體晶片的晶片銲墊可排列成該梯形圖案 4 0 0。然而,當半導體晶片之晶片銲墊不是排列成一梯形 圖案時,該半導體晶片之主動表面上可設有一重佈層,該 重佈層上設有複數個排列成該梯形圖案4 0 0之凸塊3 0 4,該 些凸塊3 0 4係藉由該重佈層電性連接於該晶片銲墊。 雖然本發明已以前述較佳實施例揭示,然其並非用以限 定本發明,任何熟習此技藝者,在不脫離本發明之精神和 範圍内,當可作各種之更動與修改。因此本發明之保護範 圍當視後附之申請專利範圍所界定者為準。00707.ptd Page 10 1220566 V. Description of the invention (6) The flow velocity of the filler material distributed around the semiconductor wafer 3 0 6 is equivalent to the flow velocity of the filler material distributed in the middle of the semiconductor wafer 3 0 6 , So that the wave front (fr ο ntf 1 0w) of the filling material is more consistent. This can reduce the "backpacking" phenomenon in the prior art filling step (as shown in Figure 5), in order to overcome or at least improve the void problem in the filling, so as to improve the semiconductor wafer 3 06 and the substrate 3 2 Reliability between mechanical and electrical connections. The present invention provides a semiconductor wafer having a plurality of semiconductor wafers arranged in an array. The semiconductor wafer has an active surface provided with a plurality of wafer pads. The wafer pads of the semiconductor wafer can be arranged in the trapezoidal pattern 400. However, when the wafer pads of the semiconductor wafer are not arranged in a trapezoidal pattern, the active surface of the semiconductor wafer may be provided with a redistribution layer, and the redistribution layer is provided with a plurality of bumps arranged in the trapezoidal pattern 400 3 0 4, the bumps 3 0 4 are electrically connected to the wafer pad through the redistribution layer. Although the present invention has been disclosed in the foregoing preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the appended patent application.
00707.ptd 第11頁 1220566 圖式簡單說明 【圖式簡單說明】 為了讓本發明之上述和其他目的、特徵、和優點能更明 顯特徵,下文特舉本發明較佳實施例,並配合所附圖示, 作詳細說明如下。 第卜2 圖 以 透 視 圖圖不 習 用 技 術 的 填 膠 步 驟 中 的 回包 象; 第3圖 本 發 明 一 實施例 之 覆 晶 封 裝 構 造 之 剖 視 圖 j 第4圖 沿 第 3圖4 - 4線之 剖 視 圖 , 以 及 第5圖 其 係 用 以 說明根 據 本 發 明 一 實 施 例 填 膠 步 號說ί 明: 102 填 膠 材 料 1 04 晶 片 104a 邊 緣 104b 邊 緣 106 孔 隙 300 覆 晶 封 裝 構 造 302 基 板 3 0 2a 接 墊 305 凸 塊 306 半 導 體 晶 片 3 0 6 a 邊 緣 3 0 6b 邊 緣 308 填 膠 309 填 膠 材 料 400 梯 形 圖 案 402 邊 404 邊 406 線00707.ptd Page 11 1220566 Brief description of the drawings [Simplified description of the drawings] In order to make the above and other objects, features, and advantages of the present invention more obvious, the following describes the preferred embodiments of the present invention with the accompanying The figure is described in detail below. Fig. 2 is a perspective view of a packaged image in the glue-filling step of a conventional technique; Fig. 3 is a cross-sectional view of a flip-chip package structure according to an embodiment of the present invention; And FIG. 5 is a diagram for explaining the step of filling glue according to an embodiment of the present invention: 102 filling material 1 04 wafer 104a edge 104b edge 106 aperture 300 flip chip packaging structure 302 substrate 3 0 2a pad 305 Bump 306 semiconductor wafer 3 0 6 a edge 3 0 6b edge 308 filling 309 filling material 400 trapezoidal pattern 402 edge 404 edge 406 line
00707.ptd 第12頁00707.ptd Page 12
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