TWI220119B - Cleaning apparatus of conditioner used in CMP - Google Patents
Cleaning apparatus of conditioner used in CMP Download PDFInfo
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- TWI220119B TWI220119B TW91135627A TW91135627A TWI220119B TW I220119 B TWI220119 B TW I220119B TW 91135627 A TW91135627 A TW 91135627A TW 91135627 A TW91135627 A TW 91135627A TW I220119 B TWI220119 B TW I220119B
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- cleaning
- regulator
- overflow tank
- chemical mechanical
- mechanical polishing
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- 238000004140 cleaning Methods 0.000 title claims abstract description 114
- 238000005498 polishing Methods 0.000 claims description 76
- 239000007788 liquid Substances 0.000 claims description 48
- 239000000126 substance Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 15
- 230000001105 regulatory effect Effects 0.000 claims description 8
- 230000001680 brushing effect Effects 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 23
- 238000010586 diagram Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 101150023475 Gfi1 gene Proteins 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
1220119 五、發明說明^ ^ ^-- 支術領域 ^ 本發明是有關於一種化學機械研磨機台之調節器清洗 ’且特別是有關於一種化學機械研磨機台之調節、、主 冼裝詈。 w /n1220119 V. Description of the invention ^ ^ ^-Field of surgery ^ The present invention relates to the cleaning of a regulator of a chemical mechanical polishing machine ′, and more particularly to the regulation and main assembly of a chemical mechanical polishing machine. w / n
化學機械研磨法是現今唯一能提供全面性平坦化的一 技術。而其平坦化之原理是利用類似磨刀這種機械式的 原理’配合適當的化學助劑（Reagent )，而將晶圓表面高 低起伏的輪廓加以磨平。 ^ 第1圖所示，其繪示為一化學機械研磨機台及習知調 喊器清洗裝置之簡示圖。 請參照第1圖，一化學機械研磨機台係包括一研磨台 l〇〇(Polishing Table)、 一 研磨墊（Polishing Pad)l〇2 、 一晶圓載具（Wafer Carrier)104、一研磨液輸送管件 (Slurry Tube)108 以及一調節器（Conditioner)110 。 其中，研磨墊1 0 2係舖在研磨台1 0 0上。晶圓載具1 0 4 係配置在研磨墊1 〇 2之上方，其係用來抓住被研磨的晶圓 1 0 6，以使晶圓1 〇 6能於研磨墊1 〇 2上進行研磨。研磨液輸 送管件1 0 8係配置在研磨墊丨〇 2之上方，其係用來輸送研磨 液到研磨墊1 0 2上。而調節器丨丨〇係配置在研磨墊丨〇 2之上 方，且調節器1 1 0具有調節面丨丨1以接觸研磨墊丨〇 2之表面 係肷有终多堅硬顆粒’例如是鑽石顆粒（D i a m 〇 n d G r i t s ) 或陶竟顆粒’用以調節研磨塾1 〇 2之表面。 當進行化學機械研磨時，研磨台丨〇 〇與晶圓載具1 〇 4分CMP is the only technique that can provide comprehensive planarization today. The principle of flattening is to use a mechanical principle similar to a sharpening knife 'with appropriate chemical additives (Reagent) to smooth the contours of the wafer surface. ^ Figure 1 shows a schematic diagram of a chemical mechanical grinding machine and a conventional shouting device cleaning device. Please refer to FIG. 1. A chemical mechanical polishing machine table includes a polishing table 100 (Polishing Table), a polishing pad 102, a wafer carrier 104, and a polishing liquid transporter. A tube (Slurry Tube) 108 and a conditioner (110). The polishing pad 102 is laid on the polishing table 100. The wafer carrier 104 is disposed above the polishing pad 102, and is used to hold the wafer 106 to be polished, so that the wafer 106 can be polished on the polishing pad 102. The polishing liquid conveying pipe 108 is arranged above the polishing pad 1-2, and is used to convey the polishing liquid to the polishing pad 102. The regulator 丨 丨 〇 is arranged above the polishing pad 丨 〇2, and the regulator 1 10 has an adjustment surface 丨 丨 1 to contact the polishing pad 丨 〇2. The surface is filled with hard particles. For example, diamond particles (Diamand Grits) or ceramic particles are used to adjust the surface of the grinding pad. When performing CMP, the polishing table 丨 〇〇 and wafer carrier 104 points
7562twf.ptd 第4頁 1220119 五、發明說明（2) 一 別沿一定的方向旋轉。而晶圓載具丨〇 4係抓住晶圓丨〇 6的背 面，而將晶圓104的正面壓在研磨墊1〇2上。研磨液輸送管 件1 0 8則是將研磨液持續不斷地供應到研磨墊丨〇 2上。所 以’化學機械研磨程序就是當晶圓丨〇 6正面之凸出的部分 和研磨塾1 0 2接觸時，便可利用研磨液中的化學助劑，以 在晶圓106的正面產生化學反應，並且藉由研磨液中之研 磨粒（A b r* a s i v e P a r t i c 1 e s )以輔助機械研磨，而去除晶圓 106正面之凸出的部份。在反覆上述之化學反應與機械研 磨之後’便可以使晶圓1 〇 6之正面平坦化。 通常研磨墊102之表面上具有許多助於研磨的凹凸結 構’因此研磨塾1 〇 2之表面係呈現1微米到2微米的粗糙程 度。而一般化學機械研磨機台在研磨數片晶圓之後，原先 研磨塾1 0 2凹凸不平之表面將會變得平坦，以致研磨墊丨〇 2 之研磨能力降低。而且，在研磨過後，從晶圓丨〇 6上被研 磨掉的物質還可能殘留在研磨墊丨〇2上，如此將使得研磨 特性有所改變’進而影響研磨之效果。因此，通常在研磨 數片晶圓之後’都會利用調節器丨丨〇來調節研磨墊丨〇 2，以 使研磨墊1 0 2之表面恢復成凹凸不平的表面，並且同時刮 除塞在研磨墊1 0 2中的殘留物。當進行括除塞在研磨墊丨〇 2 中的殘留物時，調節器丨丨〇之調節面丨丨j會沾附一些被研磨 掉的物質，而降低調節器丨丨〇的功用，所以一段時間後， 即需清洗調節器1 1 〇 。 、而習知清洗調節器的方式是將調節器丨丨〇浸入裝盛清 洗液1 1 4的水槽1 1 2中，並將調節器丨丨〇上下左右擺動進行7562twf.ptd Page 4 1220119 V. Description of the invention (2)-Do not rotate in a certain direction. The wafer carrier 4 grasps the back surface of the wafer 106, and presses the front surface of the wafer 104 on the polishing pad 102. The polishing liquid conveying pipe 108 supplies the polishing liquid to the polishing pad continuously. Therefore, the chemical mechanical polishing process is that when the protruding part of the front surface of the wafer is in contact with the polishing surface, the chemical assistant in the polishing liquid can be used to generate a chemical reaction on the front surface of the wafer 106. And the abrasive particles (Abr * asive Picic 1 es) in the polishing liquid are used to assist the mechanical polishing to remove the convex portion on the front surface of the wafer 106. After repeating the above-mentioned chemical reaction and mechanical grinding ', the front surface of the wafer 106 can be planarized. Generally, the surface of the polishing pad 102 has a plurality of uneven structures that facilitate polishing. Therefore, the surface of the polishing pad 102 has a roughness of 1 micrometer to 2 micrometers. However, after polishing several wafers on a general chemical mechanical polishing machine, the uneven surface of the original polishing pad 102 will become flat, so that the polishing capability of the polishing pad 丨 〇 2 will be reduced. In addition, after grinding, the material that has been ground from the wafer 〇 06 may still remain on the polishing pad 〇 02, which will change the polishing characteristics ′ and affect the polishing effect. Therefore, usually after polishing several wafers, the adjuster 丨 丨 〇 is used to adjust the polishing pad 丨 〇2 to restore the surface of the polishing pad 102 to an uneven surface, and at the same time scrape off the plugging on the polishing pad 1 0 2 residue. When removing the residue plugged in the polishing pad 丨 〇2, the regulating surface 丨 丨 j of the regulator 丨 丨 j will adhere to some of the ground material and reduce the function of the regulator 丨 丨 〇 After this time, the regulator 1 1 0 needs to be cleaned. The conventional way to clean the regulator is to immerse the regulator 丨 丨 〇 into the water tank 1 12 containing the cleaning solution 1 1 4 and swing the regulator 丨 丨 〇
1220119 五、發明說明（3) 清洗。但是因水槽1 1 2中的清洗液1 1 4不具流動性，因此習 知的清洗方法無法將調節器1 1 0充分洗淨。 發明内容 因此本發明的目的就是在提供一種化學機械研磨機台 之調節器清洗裝置，可以充分清洗調節器，恢復調節器的 功能。 本發明所提出一種化學機械研磨機台之調節器清洗裝 置，此裝置包括一溢流槽、一清洗液供應裝置以及一清洗 單元。其中清洗液供應裝置係與溢流槽連通，用以持續供 應清洗液至溢流槽中，並且清洗液會滿出溢流槽之頂部， 而將從調節器沖洗下來的雜質順勢帶走。而清洗單元係裝 設在溢流槽中，用以刷洗調節器，以使調節器上的雜質被 充分地去除。 本發明所提出一種化學機械研磨機台之調節器清洗方 法，此方法係首先提供一溢流槽，此溢流槽係與一清洗液 供應裝置連通，而且溢流槽内設置有一清洗單元。當調節 器在研磨墊工作一段時間後，將調節器浸入溢流槽内，使 調節器之調節面接觸清洗單元，並且旋轉清洗單元以刷洗 調節器之調節面，而使調節面上的雜質離開調節面。在此 同時，清洗液供應裝置係持續的供應清洗液至溢流槽中， 以使清洗液從溢流槽内溢流出去，而順勢將清洗下來的雜 質一併帶出溢流槽外。 本發明因採用溢流式的清洗結構，且溢流槽内裝置清 洗單元可刷洗調節器，因此可將調節器充分洗淨，恢復調1220119 V. Description of the invention (3) Cleaning. However, since the cleaning liquid 1 1 4 in the water tank 1 12 has no fluidity, the conventional cleaning method cannot sufficiently wash the regulator 1 10. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a regulator cleaning device for a chemical mechanical polishing machine, which can fully clean the regulator and restore the function of the regulator. The present invention provides a regulator cleaning device for a chemical mechanical polishing machine. The device includes an overflow tank, a cleaning liquid supply device, and a cleaning unit. The cleaning liquid supply device is in communication with the overflow tank to continuously supply the cleaning liquid into the overflow tank, and the cleaning liquid will fill the top of the overflow tank, and the impurities flushed from the regulator will be taken away. The cleaning unit is installed in the overflow tank to scrub the regulator so that the impurities on the regulator are sufficiently removed. The invention provides a method for cleaning a regulator of a chemical mechanical polishing machine. This method firstly provides an overflow tank, which is connected to a cleaning liquid supply device, and a cleaning unit is arranged in the overflow tank. After the regulator works on the polishing pad for a period of time, immerse the regulator into the overflow tank, so that the regulator's regulating surface contacts the cleaning unit, and rotate the cleaning unit to scrub the regulator's regulating surface, so that impurities on the regulating surface leave Conditioning surface. At the same time, the cleaning liquid supply device continuously supplies the cleaning liquid to the overflow tank, so that the cleaning liquid overflows from the overflow tank, and the washed impurities are taken out of the overflow tank together. Because the invention adopts an overflow type cleaning structure, and the cleaning unit of the device in the overflow tank can brush the regulator, the regulator can be fully washed and the regulation can be restored.
7562twf.ptd 第6頁 1220119 五、發明說明（4) 節器的功能。 顯易1董讓本發明之上述和其他目的、特徵、和優點能更明 …、 下文特舉一較佳實施例’並配合所附圖式，作詳 細祝明如下： 、 二=參照第2圖，其繪示/種調節器在化學機械研磨機 及本發明調節器清洗裝置之簡示圖。本發明化學機 二研'"機台之調節器清洗裝置係包括一溢流槽2 0 〇、一清 m應裝置2 〇 7以及一清洗單元21。。其中’清洗液供應 裝 包括管件204及液泵206，而清洗單元21〇包括清洗 墊片2 0 2及馬達2〇8。 上述之溢流槽2 〇 〇係用來盛裝清洗液，其材質以不會 與清洗液起化學反應者為隹，又因其槽頂上方開口需能容 納放入調節器且容易使雜質隨清洗液溢流出去，設計上槽 頂開口應具廣大平面且槽頂邊緣不能阻礙微細雜質溢滿流 出。 其中，清洗液供應裝置2 〇 7係以管件2 0 4與溢流槽2 0 0 連通，而以液泵2 0 6供應清洗液1 1 4至溢流槽2 0 0中。 另外，清洗單元2 1 0裝設在溢流槽2 0 0中，此清洗單元 2 1 0例如是清洗墊片2 〇 2，用以刷洗調節器1 1 0之調節面 i 1 1 ，其種類例如是菜瓜布或刷子，其形狀例如是圓形或 矩形。 在一較佳實施例中，清洗單元2 1 〇更包括馬達2 〇 8，其 係設置在溢流槽2 0 0的底部，並與清洗墊片2 0 2連接，馬達7562twf.ptd Page 6 1220119 V. Description of the invention (4) Function of the section controller. Xianyi 1 makes the above and other objects, features, and advantages of the present invention clearer. The following exemplifies a preferred embodiment, and in conjunction with the attached drawings, I wish to make the following detailed descriptions: 2. Second = refer to the second Figure, which shows a schematic diagram of a regulator in a chemical mechanical grinder and a regulator cleaning device of the present invention. The regulator cleaning device of the second machine of the chemical machine of the present invention includes an overflow tank 200, a cleaning device 207, and a cleaning unit 21. . The 'cleaning liquid supply device' includes a pipe fitting 204 and a liquid pump 206, and the cleaning unit 21o includes a cleaning gasket 202 and a motor 208. The above overflow tank 200 is used to hold the cleaning liquid. The material is made of those who do not react with the cleaning liquid. The opening above the top of the tank must be able to accommodate the regulator and it is easy for impurities to be cleaned. The liquid overflows out. The opening on the top of the tank should be designed with a large plane and the edge of the top of the tank should not prevent the fine impurities from overflowing. Among them, the cleaning liquid supply device 2007 is connected to the overflow tank 200 by a pipe fitting 204, and the cleaning liquid 1 14 is supplied to the overflow tank 200 by a liquid pump 2006. In addition, the cleaning unit 2 10 is installed in the overflow tank 200. The cleaning unit 2 10 is, for example, a cleaning gasket 2 0 2 for brushing the adjusting surface i 1 1 of the regulator 1 1 0, and the type For example, it is a vegetable cloth or a brush, and its shape is, for example, a circle or a rectangle. In a preferred embodiment, the cleaning unit 2 10 further includes a motor 208, which is disposed at the bottom of the overflow tank 200 and is connected to the cleaning pad 202. The motor
7562twf.Ptd 第7頁 1220119 五、發明說明（5) '""" " 2 0 8可以帶動旋轉清洗墊片2 〇 2用以刷洗調節器丨丨〇，而使 調節器1 1 0上的雜質被充分地去除。 、 接f說明本發明清洗化學機械研磨機台之調節器的方 法，叫芩照第2圖與第3圖，第2圖所繪示為一種調節器在 化學，械研磨機_台運作及本發明調節器清洗裝置之簡示 圖，第3圖所繪不為一種化學機械研磨機台及調節器在本 發明清洗裝置清洗之簡示圖。 4參照第2圖，當進行化學機械研磨時，研磨台丨〇 〇盥 晶，載具1〇4分別沿-定的方向旋轉。而晶圓載具1〇4係抓 住B曰圓106的背面，而將晶圓104的正面壓在研磨墊1〇2 上研磨液輸送官件1 0 8則是將研磨液持續不斷地供應到 研磨墊1 0 2上。所以，化學機械研磨程序就是當晶圓丨〇 6正 面之凸出的部分和研磨墊i 02接觸時，便可利用研磨液中 的化學助劑，以在晶圓106的正面產生化學反應，並且藉 由研磨液中之研磨粒以輔助機械研磨’而去除晶圓1〇6正 ，之^出的部#。在反覆上述之化學反應與機械研磨之 後，便可以使晶圓1 〇 6之正面平坦化。 媒研〗表面*具有許多助☆研磨㈤凹凸結 2 ’因此研磨塾1〇2之表面係呈現i微米到2微米的粗糙程 研磨墊1〇2凹凸不平之表面vn 圓之後’原先 特性有所改變，進而影Gfi1二上，如此將使得研磨 〜響研磨之效果。因此，通常在研磨7562twf.Ptd Page 7 1220119 V. Description of the invention (5) '" " " " 2 0 8 can be driven to rotate the cleaning gasket 2 〇2 to scrub the regulator 丨 丨 〇, and the regulator 1 1 The impurities on 0 are sufficiently removed. The description of the method for cleaning the regulator of the chemical mechanical grinding machine of the present invention is as follows: FIG. 2 and FIG. 3 are shown in FIG. 2. The regulator shown in FIG. 2 is a chemical and mechanical grinding machine. The schematic diagram of the regulator cleaning device of the present invention is not shown in FIG. 3, which is a schematic diagram of a chemical mechanical polishing machine and the regulator cleaning in the cleaning apparatus of the present invention. 4 Referring to FIG. 2, when performing chemical mechanical polishing, the polishing table and the carrier 104 are rotated in a predetermined direction, respectively. The wafer carrier 104 holds the back side of the circle B 106, and presses the front side of the wafer 104 against the polishing pad 102. The polishing liquid conveying member 10 08 continuously supplies the polishing liquid to On the polishing pad 1 0 2. Therefore, the chemical-mechanical polishing process is that when the protruding part of the front surface of the wafer is in contact with the polishing pad i 02, the chemical assistant in the polishing liquid can be used to generate a chemical reaction on the front surface of the wafer 106, and The abrasive particles in the polishing liquid are used to assist mechanical polishing to remove the part 106 that is positive. After repeating the above-mentioned chemical reaction and mechanical polishing, the front surface of the wafer 106 can be flattened. Media research】 Surface * has a lot of help ☆ Grinding ㈤ uneven surface 2 ′ Therefore, the surface of grinding 塾 102 has a rough range of 1 μm to 2 μm, and the rough surface of the polishing pad 1 02 has a rough surface vn. Change, and then affect Gfi1 on the second, so that will make grinding ~ the effect of grinding. So usually grinding
1220119 發明說明（6) Π之後 都會利用調節器1 1 0來調節研磨塾1 〇 2，以 使研磨勢1 η ?夕主二丨《呈i u 4 μ 除m j1表恢復成凹凸不平的表面，並且同時刮 除塞在研磨墊1 〇 2中的殘留物。 俨拄ΐ ΐ請參照第3圖’當調節器110在研磨墊102工作-二ζίΛν，需將調節器110移出研磨塾102，然後浸入溢流 ιί日即器110之調節面1U接觸清洗單元210 ，在此 :^液供應裝置2 0 7持續供應清洗液丨14至溢流槽2〇〇 洗下來二ΐί114從溢流槽200之頂部溢流出去，順勢將清 洗下末的雜貝一併帶出溢流槽2 〇 〇外。 由於本發明之調節器的清洗方式係將調節器110放置 槽2GG中作清洗，且清洗液114會持續的供應到溢流 = 2 0 0中，並從溢流槽2〇〇之頂部溢流出去，因此，相較於 白知清洗液為死水而不流動的狀態，本發明更能充分的將 歹欠留在調節器11 〇之調節面i丨1上的物質清洗乾淨。 加一除此之外，本發明之溢流槽2 〇〇中更包括設置有清洗 早元2 1 0其中β洗單元2 1 0例如是旋轉式清洗墊片2 〇 2， ^，由馬達2 0 8來帶動旋轉清洗墊片2 〇 2。而調節器丨丨〇之 ，節面1 1 1與清洗墊片2 〇 2接觸，以將殘留在調節器丨丨〇之 調節面111上的物質去除。 本發明之清洗裝置除了溢流槽2 ο 0之設計之外，更在 溢流槽2 0 0中裝置清洗墊片2 〇 2，因此調節器1丨〇於清洗之 過程中，係透過持續不斷供應的清洗液來清洗之，而且還 透過清洗單元2 1 0來刷洗其調節面丨丨1。因此，本發明之清 洗裝置及清洗方法可以使調節器丨丨〇充分的被清洗乾淨。1220119 Description of the invention (6) Afterwards, the adjuster 1 1 0 will be used to adjust the grinding 塾 1 〇2, so that the grinding potential 1 η? Xizhu II 丨 "is iu 4 μ except m j1 table is restored to an uneven surface, And at the same time scrape off the residue plugged in the polishing pad 102.俨 拄 ΐ ΐ Please refer to Figure 3 'When the regulator 110 is working on the polishing pad 102-two ζίΛν, the regulator 110 needs to be removed from the grinding pad 102, and then immersed in the overflow surface of the adjustment surface 1U of the solar device 110 to contact the cleaning unit 210 Here: ^ The liquid supply device 2 7 continuously supplies the cleaning liquid 丨 14 to the overflow tank 200 and washed it down 114114 overflows from the top of the overflow tank 200, and brings along the cleaning debris. Out of the overflow tank 2000. Because the cleaning method of the regulator of the present invention is to place the regulator 110 in the tank 2GG for cleaning, and the cleaning liquid 114 is continuously supplied to the overflow = 2000, and overflows from the top of the overflow tank 2000. Therefore, compared with the state where Baizhi cleaning liquid is still water and does not flow, the present invention can sufficiently clean the material left on the regulating surface i 丨 1 of the regulator 110. In addition to one, the overflow tank 200 of the present invention further includes a cleaning early element 2 1 0, where the β washing unit 2 1 0 is, for example, a rotary cleaning gasket 2 0 2, and the motor 2 0 8 to drive the rotary cleaning pad 2 0 2. In the regulator 丨 丨 〇, the node surface 1 1 1 is in contact with the cleaning pad 2 02 to remove the substance remaining on the regulation surface 111 of the regulator 丨 丨 〇. In addition to the design of the overflow tank 2 0, the cleaning device of the present invention further installs a cleaning gasket 2 0 2 in the overflow tank 200. Therefore, during the cleaning process, the regulator 1 The cleaning liquid supplied is used for cleaning, and the adjustment surface is also brushed through the cleaning unit 2 10. Therefore, the cleaning device and cleaning method of the present invention can fully clean the regulator.
1220119 五、發明說明（7) 綜合以上所述，本發明具有下列優點： 1 .本發明化學機械研磨機台之調節器清洗裝置，係採 用溢流式的清洗結構，且溢流槽中裝置清洗單元可刷洗調 節器，因此可將調節器充分洗淨，恢復其調節功能。 2 .本發明清洗化學機械研磨機台之調節器的方法，係 將調節器置於溢流槽中，使清洗液持續供應至溢流槽中， 且使旋轉的清洗塾片刷洗調節器之調節面，去除調節面的 殘留物，可快速地將調節器充分洗淨，恢復其調節研磨墊 的功能。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。1220119 V. Description of the invention (7) In summary, the present invention has the following advantages: 1. The regulator cleaning device of the chemical mechanical grinding machine of the present invention adopts an overflow type cleaning structure, and the device in the overflow tank is cleaned. The unit can brush the regulator, so the regulator can be fully washed to restore its regulating function. 2. The method for cleaning a regulator of a chemical mechanical polishing machine according to the present invention is to place the regulator in an overflow tank so that the cleaning liquid is continuously supplied to the overflow tank, and the rotating cleaning blade is used to brush the regulator to adjust the regulator. Surface, remove the residue of the adjustment surface, can quickly clean the regulator fully, restore its function of adjusting the polishing pad. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application.
7562twf.ptd 第10頁 1220119 圖式簡單說明 圖式之簡單說明 第1圖是一種化學機械研磨機台及習知調節器清洗裝 置之間不圖， 第2圖是一種調節器在化學機械研磨機台運作及本發 明調節器清洗裝置之簡示圖；以及 第3圖是一種化學機械研磨機台及調節器在本發明清 洗裝置清洗之簡示圖。 圖式之標示說明 100 研 磨 台 102 研 磨 墊 104 晶 圓 載 具 106 晶 圓 108 研 磨 液 送 管 件 110 調 即 器 111 調 々/r 即 面 112 水 槽 114 清 洗 液 200 溢 流 槽 202 清 洗 墊 片 204 管 件 206 液 泵 207 清 洗 液 供 應 裝 置 208 馬 達 210 清 洗 單 元7562twf.ptd Page 10 1220119 Brief description of the diagram Brief description of the diagram The first diagram is a diagram of a chemical mechanical grinding machine and the conventional regulator cleaning device, and the second diagram is a regulator in a chemical mechanical grinding machine A schematic diagram of the operation of the table and the regulator cleaning device of the present invention; and FIG. 3 is a schematic diagram of the cleaning of the chemical mechanical polishing machine table and the regulator in the cleaning device of the present invention. Description of the drawings: 100 polishing table 102, polishing pad 104, wafer carrier 106, wafer 108, polishing liquid delivery pipe 110, controller 111, adjustment / r immediate surface 112, water tank 114, cleaning liquid 200, overflow tank 202, cleaning gasket 204, pipe 206 Liquid pump 207 Cleaning liquid supply device 208 Motor 210 Cleaning unit
7562twf.ptd 第11頁7562twf.ptd Page 11
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91135627A TWI220119B (en) | 2002-12-10 | 2002-12-10 | Cleaning apparatus of conditioner used in CMP |
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| Application Number | Priority Date | Filing Date | Title |
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| TW91135627A TWI220119B (en) | 2002-12-10 | 2002-12-10 | Cleaning apparatus of conditioner used in CMP |
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| TW200409693A TW200409693A (en) | 2004-06-16 |
| TWI220119B true TWI220119B (en) | 2004-08-11 |
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