TWI299550B - Structure of wire bonding over semiconductor chip - Google Patents

Description

MEG 02-008TW-R [Technical Field of the Invention] This month is related to a type of wafer and, in particular, to a wafer which can be subtracted from the line marking corresponding to the active element of the wafer. [Prior Art] ~ In today's society: the information explosion society, electronic products are all over the daily life, whether in the food and clothing Ding Yue Le Fang φ ‘ will (4) integrated circuit components constitute Eslite. With the continuous advancement of electronic technology, the products with more complex and more humanized products are introduced, and the general electronic products control the operation of their electronic products by means of the a-day aa film, _ can be used for ribs (___ The method of overlaying (flip-chlp, f/C), and the method of tape-aut〇mated bonding 'TAB', so that the crystal # is connected to the substrate scale. In the process, the wire splicing machine reassembles the surface structure of the wire 190 and the wire shims 136 by means of high-frequency vibration and pressure, for example, to join the wire 19 and the wire shims 136, the ends of the wires 190. The portion 192 is heated and aggregated into a spherical pattern by pressure and high-frequency vibration to form a pattern as shown in Fig. i, which shows a schematic cross-sectional view of a wafer suitable for the wire bonding process. φ Please refer to Fig. 1, The wafer 110 has a substrate 120, a circuit structure layer 130, and a protective layer 140. The substrate 120 has a surface 122, which can be divided into an active region 124 and an inactive region 126, and the substrate 120S has a plurality of active components 128. Such as a transistor (transist〇r), shape On the active region 124 of the surface 122 of the substrate 120. The circuit structure layer 130 is formed on the surface 122 of the substrate 120. The circuit structure layer 130 is formed by a dielectric structure 132 and a metal micro-circuit structure 134. The metal microcircuit structure 134 is staggered to the dielectric structure 132 5

7, 17 λ MEG 02-008TW-R i; l is found on the body 132, and the metal micro-circuit structure (9) is electrically connected to the active element 128. The protective layer 140 is fastened on the circuit structure layer 13 and the protective layer 140 has at least an opening 142, which exposes the metal microcircuit structure 134 of the circuit structure layer. The exposed metal microcircuit structure 134 is called In order to thread the cymbal 136, the end portion 192 of the wire 19 can be engaged with the wire spacer 136 exposed outside the opening 142 of the protective layer (10) by wire bonding. Since the wafer m is strongly vibrated when the end portion 192 of the wire 190 is applied to the wire bonding pad 136 exposed to the opening 142 of the protective layer 14, the active 7G member 128 cannot be disposed below the wire bonding to avoid When the end portion 192 of the backup wire 190 hits the wire 塾 136 exposed outside the opening 142 of the protective layer 14 ', the active component 128 is broken, so the wire spacer 136 must be positioned in the inactive region corresponding to the substrate 120. The surface 122 of the substrate 12 of the wafer 11 must be specifically formed into an inactive region to increase the size of the wafer UQ. In addition, when the wafer 110 is subjected to strong vibration caused by the wire bonding process, it is also possible to damage the dielectric structure 132' of the wafer 11 such that the dielectric structure 132 is cracked. In addition, since the opening H2 of the protective layer 14Q is made large, and the wire bonding pad 136 is electrically connected to the wire 19 of the wire 19 in a large area, the wire 192 for connecting the end portion 192 of the wire 190 must be connected. The slab 136 is made of a large size 'the layout space of the metal micro-circuit structure 134 under the protective layer 140 is limited. SUMMARY OF THE INVENTION The object of the present invention is to provide a "manufacturing method, the metal micro-circuit structure under the wire bonding layer _ line layout minus (9) size, the vibration of the age-old wire bonding process to the protective layer or the dielectric structure The chance of a crack.

12995 paper month,, repair h Lai Μ MEG 02-008TW-R In describing the If of the present invention, the use of spatial prepositions is first defined. The so-called spatial prepositions, "up" means that the spatial relationship between the two objects is accessible or For example, A is on B, and it is expressed as A can be directly disposed on b, A can be in contact with B; or A can be placed on b In order to achieve the above and other objects of the present invention, a wafer is provided for electrically connecting at least one wire to a wafer by a wire bonding process, the wafer including at least one substrate and one a circuit structure layer and at least one wire spacer. The substrate has a plurality of active components, which are located on one surface of the substrate. The circuit structure layer is on the substrate, and the circuit structure layer comprises a dielectric structure and a metal microcircuit structure. The metal microcircuit structure system is interleaved in the dielectric structure, and the metal microcircuit structure is electrically connected to the active component. The wire spacer is disposed on the circuit structure layer on the active component, and the wire gasket and the wire The metal microcircuit structure of the layer is electrically connected, and the wire is bonded to the wire tab. The thickness of the wire spacer is, for example, between 1 micrometer and 5 micrometers. According to a preferred embodiment of the present invention, the wafer further includes a protective layer disposed on the circuit structure layer, the protective layer having at least one opening exposing the metal micro-circuit structure of the circuit structure layer, wherein the wire bonding pad is electrically connected to the metal micro-circuit structure through at least the opening, wherein After the protective layer is completed, the wire spacer is formed, and the maximum aperture of the opening is, for example, between 微米·5 μm and 4 μm. In addition, the wire spacer includes at least one soft metal layer, and the soft metal layer occupies the contact line. The volume of the gasket is at least -half, wherein the hardness of the soft metal layer is less than the V, and the material of the soft metal layer may be gold, copper, lead or an alloy of the metals, etc. Further, in accordance with a preferred embodiment of the present invention The wafer may also include a soft dielectric material and a

MEG 02-008TW-R lead wire 'soft dielectric material is placed on the circuit structure layer, and the wire drawing system is arranged on the soft-aged electric material on the active part; the 丨 line is at least the green age riding gambling line gasket Connected with _. A hybrid ageing material such as silky imine. The wafer of the present invention may be buffered by a soft dielectric material under the wire bonding pad or a soft metal layer of the wire bonding pad, so that when the end of the wire is hit onto the wire bonding piece, _ hit (four) into the vibration of the wafer, so that the end of the Wei can hit the top of the positive touch element, the fineness of the base can reduce the area of the pre-sweep area, so the active component can be placed on the base The density on the surface, which in turn reduces the size of the wafer. In addition, since the wire gasket has a soft dielectric material, or the wire gasket has a soft metal layer configuration, when the end of the wire is hit to the wire pad, the degree of vibration of the wafer due to the wire bonding process can be buffered. It is possible to avoid the occurrence of cracks in the protective layer or the dielectric structure of the wafer. Moreover, since the protective layer _ port can be made small, the metal micro-circuit structure only needs to be connected to the wire bonding pad or the lead wire in a small area, and can be reduced for connection with the contact, wire gasket or lead wire. The size of the metal microcircuit structure can increase the layout space of the metal microcircuit structure under the protective layer. The above and other objects, features, and advantages of the present invention will be apparent from [Embodiment] FIG. 2 is a schematic enlarged cross-sectional view showing a wafer which can be subjected to a wire bonding process according to a first preferred embodiment of the present invention. The wafer 210 has a substrate 220, a circuit structure layer 230, a protective layer 240 and at least one wire spacer 250. The substrate 220 has a plurality of active components 228, such as

MEG 02-008TW-R 1299:; 53⁄4月曰修(X)正换页------| y . 1 7 ...... _ ------- Metal Oxide Semiconductor (Metal Oxide A semiconductor, a MOS, or a transistor is formed on one surface 222 of the substrate 220. The circuit structure layer 230 is formed on the surface 222 of the substrate 220. The circuit structure layer 230 is composed of a dielectric structure 232 and a metal micro-circuit structure 234. The metal micro-circuit structure 234 is interlaced with the dielectric structure. 232, and also formed on the dielectric structure 232, and the metal micro-circuit structure 234 is electrically connected to the active device 228. The protective layer 240 is fastened on the circuit structure layer 230, and the protective layer 240 has at least one opening 242, which exposes the metal micro-circuit structure 234 of the circuit structure layer 230, and the maximum aperture 彳 of the opening 242 is between Between 5 microns and 40 microns. After the protective layer 240 is formed, the wire spacer 250 is also formed on the protective layer 240 above the active device 228 and on the metal micro-circuit structure 234 exposed outside the opening 242 of the protective layer 240. The thickness t is, for example, between 1 micrometer and 5 micrometers. The surface metal material of the wire spacer 250 wire gasket is gold. In the embodiment, the wire gasket 250 is directly located on the opening 242 and exposed. Outside. The wire spacer 250 includes an adhesive layer 252 and at least one soft metal layer (not shown) having a thickness greater than 1 micrometer, and the adhesive layer 252 is fastened on the protective layer 240, the sidewall of the opening 242, and exposed. The metal microcircuit structure 234 outside the opening 242 of the protective layer 240, and at least one soft metal layer is tied to the adhesive layer 252. The material of the soft metal layer is, for example, copper, gold or lead alloy. In the case, the hardness of the soft metal layer is less than 8 〇 Hv, and the material of the adhesive layer 252 is, for example, titanium, chromium, titanium pseudo-alloy, and niobium nitrogen compound. The wire spacer 250 may be, for example, the following structures. The first structure is composed of an adhesive layer 252, a copper layer, a nickel layer and a gold layer, and the adhesive layer 252 is located on the bottom layer of the wire spacer 25 0 for wire bonding. The spacer 25 can be fixed on the surface of the wafer 21, and the copper layer

MEG 02-008TW-R is located on the adhesive layer 252. The nickel layer is on the copper layer, the gold layer is on the nickel layer, and the second structure is composed of the adhesive layer 252, the copper layer and the gold layer. The layer 252 is located on the bottom layer of the wire bonding pad 25〇, so that the wire bonding pad 250 can be fixed on the surface of the wafer 21〇, and the laying layer is on the adhesive layer 252, and the gold layer is on the copper layer, the third type. The structure is composed of an adhesive layer, a faulty alloy layer and a metal crucible. The adhesive layer 252 is located on the bottom layer of the wire pad </ RTI> 250, so that the wire spacer 250 can be fixed on the surface of the wafer 210, and the alloy layer is The gold layer is removed from the adhesive layer on the lead alloy layer. In the above three types of wire gaskets, the structure of the copper layer, the gold layer and the wrong alloy layer are all soft metal layers. Therefore, the impact of the external force on the wafer 21G can be affected by the reading force. 'In the preferred case, the total thickness of the soft f metal layer is greater than 1 micron. The wire 290's end 292 can be joined to the gold layer of the wire spacer 250 by wire bonding. In the above structure, since the wire bonding pad 25 () has a soft metal layer, when the end portion 292 of the wire 290 is hit onto the wire bonding pad 25, the degree of vibrating the wafer 210 due to the wire bonding process can be buffered. The end portion 2 of the wire 29 can be placed on the wire splicing plate 250 disposed above the active component 228, so that the surface 222 of the substrate 220 can reduce the area of the reserved inactive zone, so that the active component can be added (10). The extent of placement on the surface (10) of the substrate 22 reduces the size of the cymbal 21 。. In addition, since the wire 塾 # 25 〇 has a soft metal layer ′, when the end portion 2 of the wire 290 is hit onto the wire shims 25 , the degree of vibration of the wafer 210 due to the wire splicing process can be buffered, so that the wafer 21Q can be avoided. Cracks are formed in the barrier layer 24 or the dielectric structure 232. In addition, since the opening 242 of the protective layer 240 can be made small, the metal micro-circuit structure can be electrically connected to the wire-bonding pad 25q only in a small area. I2&quot;5 cooked 4 7 day repair ¥ replacement page

-· - · j MEG 02-008TW-R is connected to reduce the size of the metal micro-circuit structure 234 for connection to the wire spacer 250, so that the metal micro-circuit structure 234 under the protective layer can be (10) Line layout space. In the above structure, the 'wire slap piece is tied directly above the opening, however, the application of the present invention is not limited thereto, as shown in Fig. 3, the edge of which can be carried out according to a second preferred embodiment of the present invention. The reduced (9) sulphur green map, if the towel is the same as in the first preferred embodiment, the component specified in the embodiment is identical to the first-best compensation. The components referred to in _ are not repeated here. Referring to FIG. 3, the wafer 212 further has a - lead 256, and the wire bonding pad 254 is positioned on the protective layer 240 around the opening d 242, so that the wire bonding pad 254 can be exposed to the protective layer 240 by the wire 256. The metal micro-circuit structure 234 outside the opening 242 is electrically connected, and the wire-bonding pad 254 is located above the active component 228. The surface metal material of the wire-bonding pad 254 wire-bonding pad is gold. The wire spacer and the structure of the lead 256 each include at least an adhesive layer 258 and at least one soft metal layer (not shown) having a thickness greater than i micrometers, such as an adhesive layer 258, a copper layer, and a nickel. The adhesive layer 258 is formed on the bottom layer of the wire bonding pad 254 and the lead 256 for fixing the wire bonding pad 254 and the wire 256 to the surface of the wafer 212, and the copper layer is anchored on the adhesive layer 258. The nickel layer is on the copper layer and the gold layer is on the nickel layer. In addition, the wire 254 and the lead 256 may also be formed by an adhesive layer 258, a copper layer and a gold layer. The adhesive layer 258 is located on the bottom layer of the wire bonding pad 254 and the lead 256 for the wire bonding pad 254 and the lead wire 256. It can be fixed on the surface of the wafer 212, and the copper layer is on the adhesive layer 258, and the gold layer is on the copper layer. Further, the wire spacer 254 and the lead 256 can also be formed by the adhesive layer 258, the lead alloy layer and The gold layer constitutes the 'adhesive layer 258 is located on the bottom layer of the wire pad 254 and the lead 256, so as to make 11

The MEG 02-008TW-R wire 254 and lead 256 can be attached to the surface of the wafer 212, while the alloy layer is positioned on the adhesive layer 258 and the gold layer remains on the wrong alloy layer. The adhesion layer 258 is irradiated with titanium, chromium, titanium alloy or titanium nitride. In the above embodiment, the opening of the protective layer is a small structure, but the application of the present invention is not limited thereto. As shown in FIG. 4, the scale may be performed according to a third preferred embodiment of the present invention. A schematic cross-sectional view of a wafer of a wire bonding process. Referring to FIG. 4, the opening 342 of the protective layer 34A may have a large cross-sectional area, and the maximum diameter of the opening 342 is, for example, 6 〇 micron', and the opening 342 of the protective layer 340 may expose the metal micro-circuit structure. Body 334. After the protective layer 340 is formed, the step of fabricating the wire pad μ 35 , can be performed, wherein the wire bonding pad can be formed only on the metal micro-circuit structure exposed outside the opening σ 342 of the protective layer 34Q. The spacer 350 can be positioned above the active component 328. The metal material of the surface of the tampering pad 35 is a gold. The wire pad #35〇 includes an adhesive layer and at least one soft shell metal layer. The thickness of the soft shell metal layer is greater than 丨 micron. The structure of the metal layer is as described above, and will not be described here. _, can also be as shown in the 5th sleeve structure, in accordance with a preferred embodiment of the present invention, a cross-sectional enlarged view of a wafer that can be subjected to a wire bonding process, wherein if the implementation of the financial implementation and the third health supplement - In the example, the components illustrated in the embodiment of the present invention are identical to those in the first preferred embodiment, and will not be described again. As shown in FIG. 5, the wire spacer 354 can also be returned. It extends to the side soil made by the opening 3 of the protective layer (10) and to the protective layer around the opening 342 of the # near protective layer. The only women's wipes are made by the threading (4) with a soft metal layer to cushion the wire-laying process (10). However, this is not the only one mentioned above. As in the 6th 12

Meg 02-008TW-R) Positive Replacement Page As shown in the figure, there is shown a cross-sectional enlarged view of a wafer which can be subjected to a wire bonding process in accordance with a fifth preferred embodiment of the present invention. Referring to FIG. 6, the wafer 410 may further include a flexible dielectric material 460 and a lead 470. Thus, the soft dielectric material 460 can buffer the impact on the wafer 410 during wire bonding. The soft dielectric material 460 is on the protective layer 440, and the wire bonding pad 45 is on the soft dielectric material 460, and the lead 470 is through the flexible dielectric material 46A for opening to the protective layer 440. The metal microcircuit structure 434 outside the 442 is electrically connected to the wire bonding pad 45〇, wherein the wire bonding pad 450 is positioned above the active component 428, and the wire clamping tab 45 is also positioned at the opening 442 of the protective layer 440. Above, the soft dielectric material 46 is, for example, polyimine. Since the soft dielectric material 460 can buffer the impact of the wire bonding process on the wafer 41, the wire spacer 450 can also be a structure that does not need to have a soft metal layer; of course, the wire bonding plate 450 can also have a soft metal layer. The structure, when doing the wire-laying process, will have a more buffering effect. The metal structure formed by the wire spacer 450 and the wire 470 is on the flexible dielectric material 460, the opening 462 of the flexible dielectric material 460, the protective layer 44, the sidewall of the opening 442 of the protective layer 440, and The surface metal material of the wire gasket 250 wire gasket is gold, which is exposed on the metal microwire frame 434 outside the opening 442 of the protective layer 440. The metal structure formed by the wire splicing 450 and the wire 470 may include an adhesive layer 452 and at least one soft metal layer (not shown). The thickness of the soft metal layer is greater than 1 micrometer, for example, by the adhesive layer 452 and the copper layer. The layer and the gold layer are formed, and the adhesive layer 452 is located on the bottom layer of the metal structure formed by the wire bonding pad 450 and the lead wire 47, so that the wire bonding pad 450 and the wire 470 can be fixed on the surface of the wafer 41〇, and the copper layer The structure is on the adhesive layer 452, the nickel layer is on the copper layer, and the gold layer is on the sound recording; in addition, the metal structure formed by the wire spacer 450 and the lead wire 470 can also be adhered by the reed 13

129951⁄2 7.1 MEG 02-008TW-R 452, consisting of a copper layer and a gold layer. The adhesive layer 452 is located on the bottom layer of the metal structure formed by the wire bonding pad 45〇 and the lead wire 47〇 for the wire bonding pad 450 and the lead wire 470. It can be fixed on the surface of the wafer 41, and the copper layer is on the adhesive layer 452, and the gold layer is on the copper layer: in addition, the metal structure formed by the wire spacer 450 and the wire 470 can also be an adhesive layer. 452. The alloy layer and the gold layer are formed. The adhesive layer 452 is located on the bottom layer of the metal structure formed by the wire bonding pad 450 and the wire 470, so that the wire bonding pad 450 and the wire 470 can be fixed on the surface of the wafer 410. The lead alloy layer is on the adhesive layer 452, and the gold layer is on the lead alloy layer. The material of the adhesive layer 452 is, for example, titanium, chromium, titanium tungsten alloy or titanium nitride. In the structure of the fifth preferred embodiment, since the wire spacer 450 has a soft dielectric material 460, and the wire spacer 45 can also have a soft metal layer, the end portion 492 of the wire 49 is hit. When the wire spacer 450 is wound, the degree of vibration of the wafer 41 can be buffered due to the wire bonding process, so that the end portion 492 of the wire 490 can be placed on the wire bonding pad 450 disposed above the active component 428, such that the substrate 420 The surface 422 can reduce the area of the reserved inactive area, so that the density of the active element 428 disposed on the surface 422 of the substrate 42 can be increased, thereby reducing the size of the wafer 410. In addition, since the wire gasket 45q has a soft dielectric material 460, and the wire gasket 45 〇 can also have a soft metal layer, when the wire end portion 492 is hit to the wire spacer 450 ±, it can be slowed down. It is possible to avoid the occurrence of cracks in the protective layer 440 or the dielectric structure 432 of the wafer 41 due to the degree of vibration of the wafer caused by the wire bonding process. Furthermore, since the opening 442 of the protective layer 440 can be made small, approximately between 5 μm and 4 μm, the metal micro-circuit structure 434 only needs to be electrically connected to the lead 47 in a small area. The size of the metal micro-circuit structure 434 to be connected to the lead 470 can be reduced, so that it can be 1299 1299

MEG 02-008TW-R increases the line layout space of the metal micro-circuit structure 434 located under the protective layer 440. In the fifth preferred embodiment described above, the wire bonding pad is fastened directly above the opening of the protective layer. However, the application of the present invention is not limited thereto, as shown in FIG. 7, which is shown in accordance with the sixth aspect of the present invention. A schematic illustration of a sword face enlargement of a wafer which can be subjected to a wire bonding process, wherein the reference numerals in this embodiment are the same as those in the fifth preferred embodiment, indicating that the components specified in the embodiment are identical to The components specified in the first preferred embodiment will not be described again. Referring to FIG. 7, the lead 472 of the wafer 412 extends over the flexible dielectric material 460 in addition to the opening 462 of the flexible dielectric material 460, and the wire bonding pad 454 is tied to the flexible dielectric material 460. The flexible dielectric material 460 around the opening 462, such that the wire bonding pad 454 can be electrically connected to the metal micro-circuit structure 434 exposed outside the opening 442 of the protective layer 440 by the wire 472, and the wire bonding pad 454 Positioned above the active component 428, the surface metal material of the wire spacer 454 wire gasket is gold. The metal structure of the wire spacer 454 and the lead wire 472 is as described in the fifth preferred embodiment, and will not be described again. In summary, the present invention has at least the following advantages: 1. The wafer of the present invention has a soft dielectric material under the wire, or the wire gasket has a soft metal layer configuration, so that the end of the wire is hit. When the wire gasket is used, it can buffer the degree of vibrating the wafer due to the wire bonding process, so that the wire portion of the wire can be placed on the wire bonding pad located above the active component, so that the surface of the substrate can reduce the reservation non-active. The area of the area can increase the density of the active component disposed on the surface of the substrate, thereby reducing the size of the wafer. 2. The wafer of the present invention has a soft dielectric material under the wire gasket or a wire gasket 15

Meg 02-008TW-R f is a configuration that has a soft metal layer. Therefore, when the end of the wire is hit on the wire shims, it can be slowed down. A case where a protective layer or a dielectric structure of a wafer is cracked. 3. The wafer of the present invention, since the opening of the protective layer can be made small, the metal micro-circuit structure only needs to be electrically connected to the wire pad or the lead in a small area, and can be reduced for use with the wire or the wire. The size of the connected metal micro-circuit structure can increase the layout space of the metal micro-circuit structure under the protective layer. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is obvious to those skilled in the art that the present invention can be modified and retouched without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a conventional wafer suitable for a wire bonding process. Fig. 2 is a schematic enlarged cross-sectional view showing a wafer which can be subjected to a wire bonding process in accordance with a first preferred embodiment of the present invention. Fig. 3 is a schematic enlarged cross-sectional view showing a wafer which can be subjected to a wire bonding process in accordance with a second preferred embodiment of the present invention. Fig. 4 is a schematic enlarged plan view showing a scraping surface of a wafer which can be subjected to a wire bonding process according to a third preferred embodiment of the present invention. Fig. 5 is a schematic enlarged plan view showing a scraping surface of a wafer which can be subjected to a wire bonding process in accordance with a fourth preferred embodiment of the present invention. Fig. 6 is a cross-sectional enlarged view showing a wafer which can be subjected to a wire bonding process in accordance with a fifth preferred embodiment of the present invention.

129955^) Year B: (MEG 02-008TW-R Run~一...一.--: Figure 7 is a cross-sectional enlarged view of a wafer that can be wire-bonded in accordance with a sixth preferred embodiment of the present invention; [Main component symbol description] Description of the diagram: 110 · Wafer 120: Substrate 122: Surface

124: active region 126: inactive region 128: active device 130: circuit structure layer 132: dielectric structure 134: metal microcircuit structure 136: wire spacer

140: protective layer 142: opening 190: wire 192: end 210: wafer 212: wafer 220: substrate 17

MEG 02-008TW-R 12995 month u repair &amp; replacement page 222 : surface 228 : active component 230 : circuit structure layer 232 : dielectric structure 234 : metal microcircuit structure 240 : protective layer 242 · · opening

250 : Wire gasket 252 : Adhesive layer 254 : Contact wire gasket 256 : Lead 258 : Adhesive layer 290 : Wire 292 : End

328: Active component 334 · Metal microcircuit structure 340 : Protective layer 342 : Opening 350 : Wire spacer 352 : Adhesive layer 354 : Wire spacer 18

MEG 02-008TW-R 1299550 a) jLtitir '96. 7. 1 7 , --: Li 10 · Wafer 412 : Wafer 420 : Substrate 422 : Surface 428 : Active element 432 : Dielectric structure 434 : Metal micro-circuit structure Body 440: protective layer 442: opening 450: wire spacer 452: adhesive layer 454: wire spacer 460: flexible dielectric material 462: opening 470: lead 472: lead 490: wire 492: end

Claims (1)

MEG 02-008TW-R 1299 5§0月9修^正换页Λ. 2 '. X. Patent scope: 1. A wafer structure 'The wafer structure at least includes: a substrate having at least one active component Anchored on a surface of the substrate; a circuit structure layer on the surface of the substrate, the circuit structure layer comprising a dielectric structure and a metal microcircuit structure, the metal microcircuit structure system Interleaved in the dielectric structure, and the metal microcircuit structure is electrically connected to the active component; a protective layer is disposed on the circuit structure layer, and a first opening of the protective layer exposes the metal microcircuit a dielectric material layer on the protective layer, the dielectric material layer material comprises a polymer, and a second opening of the dielectric material layer exposes the metal microcircuit structure; Arranging on the dielectric material layer, the wire bonding pad comprises an adhesive layer and a metal layer, the adhesive layer is on the dielectric material layer, and the metal layer is on the adhesive layer, the metal layer comprises At least one gold layer The metal layer is connected to the metal microcircuit structure via the first opening and the second opening, and the wire spacer is disposed on at least one of the active components; And a wire bonded to the wire shims. 2. The wafer structure of claim 1, wherein the first opening has a pore size between 微米·5 μm and 40 μm. 3. The wafer structure of claim 1, wherein the wire spacer is directly on the second opening. 4. The wafer structure of claim 1, further comprising a lead in the first opening 12 In the MEG 02-008TW-R and the second opening, the wire aligning is connected to the metal microcircuit structure through the first opening and the second opening through the scribe line. 5. The wafer structure of claim 1, wherein the lead is formed of the adhesive layer and the metal layer. 6. The wafer structure as claimed in claim 1, wherein the wire is placed on the dielectric layer. 7. The wafer structure of claim 1, wherein the wire spacer further comprises a copper layer between the adhesive layer and the gold layer. 8. The wafer structure of claim 1, wherein the wire bonding pad further comprises a copper layer and a nickel layer between the adhesive layer and the gold layer, and the fine layer is on the wire layer. The nickel layer is on the copper layer. 9. The wafer structure of claim 1, wherein the metal layer has a hardness of less than 8 〇 Hv. 10. The wafer structure of claim 1, wherein the material of the adhesive layer is selected from the group consisting of titanium tungsten alloy. 11. The wafer or structure of claim 1, wherein the material of the adhesive layer is selected from the group consisting of titanium. 12. The wafer structure of claim 1, wherein the material of the adhesive layer is selected from the group consisting of chromium metal. The wafer structure of claim 1, wherein the material of the adhesive layer is selected from the group consisting of titanium nitride compounds. 21 129 7 Replacement page 1/1 » . - MiiU 02-008TW-R 14. The wafer structure as described in the patent application, wherein the dielectric enthalpy is a polyamine. 15. A wafer structure as claimed in claim IA, between 1 micrometer and 5 micrometers. The wafer or structure of claim 1, wherein the wafer is formed on the wire bonding pad. The wafer structure of claim 1, wherein the surface metal material of the wire spacer is gold. The thickness of the wire gasket in I is between the wire and the wire through the one-line process. 17. 18. As claimed in the patent scope! The wafer structure of item wherein the active device comprises a metal oxide semiconductor. The wafer structure of claim 1, wherein the active device comprises an electro-optic body. The wafer structure of claim i, wherein the wire splicing sheet further comprises a wrong alloy layer between the adhesive layer and the gold layer. 22 m 126 9731TW 120 140 130 MEG 02-008TW-R 1299! Fenggongyue" Lai.- Recording: 7. Designation of representative drawings: (1) The representative representative of the case is: (7). (2) Brief description of the component symbols: 428: Active component 434: Metal microcircuit structure 440: Protective layer 442 · Opening 454: Wire spacer 460: Flexible dielectric material 462: Opening 472: Lead 8. If there is a chemical formula in this case, Please reveal the chemical formula that best shows the characteristics of the invention: