[go: up one dir, main page]

TWI298602B - Apparatus and method for adjusting brightness of light emitting diodes - Google Patents

Apparatus and method for adjusting brightness of light emitting diodes Download PDF

Info

Publication number
TWI298602B
TWI298602B TW95103965A TW95103965A TWI298602B TW I298602 B TWI298602 B TW I298602B TW 95103965 A TW95103965 A TW 95103965A TW 95103965 A TW95103965 A TW 95103965A TW I298602 B TWI298602 B TW I298602B
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
signal
current
brightness
Prior art date
Application number
TW95103965A
Other languages
Chinese (zh)
Other versions
TW200731864A (en
Inventor
Chen Ting Kuan
Chun Lin Shen
Original Assignee
Holtek Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Holtek Semiconductor Inc filed Critical Holtek Semiconductor Inc
Priority to TW95103965A priority Critical patent/TWI298602B/en
Publication of TW200731864A publication Critical patent/TW200731864A/en
Application granted granted Critical
Publication of TWI298602B publication Critical patent/TWI298602B/en

Links

Landscapes

  • Led Devices (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)

Description

1298602 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種調整發光二極體亮度之裝置與方 法二尤指一種針對複數發光二極體所構成電路,經由偵測 .各節點電壓來做電流運算,再以脈波寬度調整(Puise .lldthM〇dUlati〇n,PWM)方法來針對各個發光二極體進行 電流補償,而使各發光二極體呈現一均勻狀態。 【先前技術】 …按,發光二極體(Light Emitting Diode , LED)之發 光原理為於發光二極體施加一順向電流,即可使苴發光, f順向電流為-額定範圍内,發光二極體之發光強㈣順 向:流之電流值呈一正比,因此我們可得知發光二極體是 一種電流驅動之電子元件。 疋 直綠1光二極體之應用非單—使用,必須使其組成—條 二㈣Ϊ於組成一個面(矩陣)時,則必須將複數發光 以串聯或並聯方式加以連接,以達到上述需求,ί 路所示’其係為習知發光二極體以並聯方式連接; 木冓,’其t母個發光二極仙各自串接— 2 :但疋母個發光二極體此順向 二 的差異。若㈣源⑺13為一固定值, 之順向電壓愈高,其發光亮度愈低;反之,笋光:11 η電歷愈低,其發光亮度愈高。再者,U 不,其係為習知發光二極體以串聯方式連接電路架t所 ' 1298602 其中該複數個串聯之發光二極體u之流入 度較並聯為佳,但是仍存在有不均題故: =為電壓源⑴數發光二極體二: :月芩閱圖二所不’係為習知複數發光二極體 :曰接對應之開汲極之N通道金屬氧化半導體二文 二,負5之電路架構圖,其係包括有:複數發光ί 豆设數即點Μ及複數Ν通道金屬氧化半導體 體&本架構常應用於矩陣式顯示面板中+===曰 $述’將會因各個發光二極體u °° 亮度不均勻之問題。 口此以成絲員不面板 光齐數發光二極體無論進行串聯或並聯後,其發 〜X句勻成為極需要解決之問題。 【發明内容】 基於解決以上所述習知技蓺 發光二極體亮度n失柄明為—種調整 二極體要目的為針對複數發光 再以脈波寬^敕由彳貞測各節點電壓來做電流運算, 又°。正(Pulse Width Modulation,PWM)方、去 來針對各個發光二極體 latlQn削)方法 之發光呈現—均㈣g。订^補该’而使各發光二極體 裝置為括目有的’;發明為一種調整發光二極體亮度之 複數並列發光二極體; 1298602 複數負載,對應複數發光二極體所設置,以控制流向發 w光=極體之電流量,以及開啟關閉發光二極體; 複數即點,對應複數發光二極體及複數負載所設置,以 提供電壓讀取; 颁比/數位轉換器,將複數節點之電壓信號做一類比/ 數位轉換; 、 "^ ^ ^ 喝%饭双即點電壓值里1殉一對眧 表獲得節點電壓所對應之電流值,並逐一補償電流至、 一基準值,並送出一補償電流信號; μ 2界:’設置於類比/數位轉換器與微控制器之間, U為—者之信號傳輸界面; 一脈波寬度調整產生器,接收抻 號,並執行補償電流之動作;U _電流信 一権㈣卿⑽度調整產生 較佳者,調整發光二極體亮度之穿 元移位暫存器,用以接收序列界面所傳置更上包括有-· 號分配至該Ν位元閂鎖輸出埠暫存器。雨k唬,並將信 為進-步對本發明有更深入的說明葬 圖號說明及發明詳細說明,簠能 错由以下圖示、 工 作有所助益。 對胃審查委員於審查 【實施方式】 錄配a下列之圖式㈣本發明之詳έ钍 關係’以利於貴審委做一瞭解。、、、、、、。構,及其連結 1298602 之金屬氧化半導體場效電晶體之汲極係以開汲極連接方式 加以驅動,其中調整發光二極體亮度之電路具有自我測試 之功能(Self Test Mode Function),可依序由複數節點 來價測各個發光二極體21汲極端之電壓,再經由類比/數位 轉換為(Analog / Digital Converter) 5,將各類比信號 轉換成數位信號,經由一序列界面(Seriai interface) 4 傳送至微控制器(Micro Controller Unit,MCU) 3中,微1298602 IX. Description of the Invention: [Technical Field] The present invention relates to a device and method for adjusting the brightness of a light-emitting diode, and more particularly to a circuit for a complex light-emitting diode, which detects the voltage of each node. The current calculation is performed, and the pulse width adjustment (Puise.lldthM〇dUlati〇n, PWM) method is used to perform current compensation for each of the light-emitting diodes, so that each of the light-emitting diodes exhibits a uniform state. [Prior Art] ..., the principle of the light-emitting diode (LED) is to apply a forward current to the light-emitting diode, so that the light can be emitted, and the forward current is within the rated range, and the light is emitted. The luminous intensity of the diode (4) forward: the current value of the current is proportional, so we can know that the light-emitting diode is a current-driven electronic component. The application of the straight green 1-light diode is not a single-use, it must be composed - the second two (four) Ϊ when forming a face (matrix), the complex light must be connected in series or in parallel to achieve the above requirements, ί The road is shown as 'the light-emitting diodes are connected in parallel; the rafts, 'the two mothers of the two light-emitting diodes are connected in series—2: but the difference between the two forwards of the mother-emitting diode . If (4) source (7) 13 is a fixed value, the higher the forward voltage, the lower the luminance of the light; on the contrary, the lower the light intensity of the 11 η electrical circuit, the higher the luminance of the light. Furthermore, U is not a conventional light-emitting diode connected in series to the circuit frame t'1298602. The inflow of the plurality of series-connected light-emitting diodes u is better than parallel connection, but there is still unevenness. The reason: = is the voltage source (1) number of light-emitting diodes 2: :月芩看图二不不' is a conventional complex light-emitting diode: the corresponding N-channel metal oxide semiconductor , negative 5 circuit architecture diagram, which includes: complex illumination ί bean number, point Μ and complex Ν channel metal oxide semiconductor body & This architecture is often used in matrix display panel +===曰$述' There will be problems with uneven brightness of each light-emitting diode u °°. The mouth is not a panel. The light-emitting diodes are connected in series or in parallel, and the transmission of the ~X sentence becomes a problem that needs to be solved. SUMMARY OF THE INVENTION Based on the above-mentioned conventional techniques, the brightness of a light-emitting diode is determined to be a kind of adjustment diode, and the purpose of adjusting the diode is to measure the voltage of each node for the complex light and then the pulse width. Do current calculation, and °. The luminescence of the method of Pulse Width Modulation (PWM) and the method for each light-emitting diode latlQn) is expressed as (four) g. The invention is a plurality of LEDs for adjusting the brightness of the light-emitting diodes; 1298602 a plurality of loads, corresponding to the plurality of light-emitting diodes, To control the flow direction to generate the amount of current of the polar body, and to turn off the light-emitting diode; the complex point is set corresponding to the complex light-emitting diode and the complex load to provide voltage reading; the ratio/digital converter, The voltage signal of the complex node is converted into an analog/digital conversion; , "^ ^ ^ Drinking a double of the double point voltage value, a pair of 眧 table to obtain the current value corresponding to the node voltage, and compensating the current one by one, one The reference value, and send a compensation current signal; μ 2 boundary: 'set between the analog/digital converter and the microcontroller, U is the signal transmission interface; a pulse width adjustment generator, receiving the nickname, And perform the action of compensating the current; U _ current letter one (four) Qing (10) degree adjustment produces better, adjust the brightness of the light-emitting diode to wear the meta-shift register, for receiving the sequence interface, the above includes -· score Ν bit to the latch output port register. The rain is k唬, and the letter is a step-by-step description of the invention. The description of the funeral figure and the detailed description of the invention can be helpful by the following illustrations and work. Review by the Stomach Review Committee [Embodiment] The following is a description of (a) the detailed relationship of the present invention to facilitate your understanding. , , , , , ,. The structure and its connection to the metal oxide semiconductor field effect transistor of 1289602 are driven by an open-drain connection, wherein the circuit for adjusting the brightness of the LED has a Self Test Mode Function, which can be The order is measured by the complex node to measure the voltage of each LED 21 汲 extreme, and then converted to (Analog / Digital Converter) 5 by analog/digital converter, and the various ratio signals are converted into digital signals through a sequence interface (Seriai interface ) 4 Transfer to Micro Controller Unit (MCU) 3, Micro

控制器3讀取了各個發光二極體汲極端之電壓數值後,並以 查詢不同製程提供之元件參數所產生之電壓對電流的對照 表(如圖五所揭露),以獲得各個發光二極體對應電流值, 再取電流值之最小值做為基準電流值,並以基準電流值與 其他較大電流值計算出比例關係,例如:最小電流值為 、、〇<’敢大電流值為8〇%,此時就必須將最大電流值以負向 f仏(即為降低電流值)2〇%,而將該發光二極體電流值調 整與最小值發光二極體電流值相同,此時再以一脈衝寬度 產生為(Pulse Width Modulation Generator) 7來接 $城控制器3之補償電流信號,並執行補償電流之動作。而 立元閃鎖輸出埠暫存器6之功能為控制脈波寛度調整產 生器6之輸出功率。 藉由上述電路架構,可整理出一調整發光二極體亮度 方去’其係包括有下列步驟: (1)利用一類比/數位轉換器將複數節點之電壓信號做 —類比/數位轉換; (2 )利用一微控制器逐一讀取複數節點電壓值,在查 °句~對照表獲得節點電壓所對應之電流值,並逐一補償 10 1298602 電?㈣值,並送出—補償電流信號; 序列界面做為於類比/數位轉 器之信號傳輸界面; 鄕锝換控制 ^4)利=恤70移位暫存11接收糊界面所傳輸之传 ^二將信號分配至制位元_輸出埠暫存器; 宽度調整產生器接收微控制器之補償 电飢L唬,亚執行補償電流之動作;以及 鎖輸出埠暫存11,用以控制脈波寬The controller 3 reads the voltage values of the 汲 extremes of each illuminating diode, and queries the voltage versus current generated by the component parameters provided by different processes (as disclosed in FIG. 5) to obtain each illuminating diode. Corresponding to the current value, take the minimum value of the current value as the reference current value, and calculate the proportional relationship between the reference current value and other large current values, for example: the minimum current value, 〇<' 8〇%, at this time, the maximum current value must be 2负% in the negative direction f仏 (that is, the current value is reduced), and the current value of the LED is adjusted to be the same as the minimum value of the LED current. Then, a pulse width (Pulse Width Modulation Generator) 7 is used to receive the compensation current signal of the $3 controller, and the action of compensating the current is performed. The function of the eccentric flash lock output 埠 register 6 is to control the output power of the pulse pulsation adjusting generator 6. With the above circuit architecture, an adjustment of the brightness of the light-emitting diode can be arranged to include the following steps: (1) using a analog/digital converter to perform analog-to-digital conversion of the voltage signals of the plurality of nodes; 2) Using a microcontroller to read the complex node voltage values one by one, obtain the current value corresponding to the node voltage in the check sentence ~ comparison table, and compensate 10 1298602 one by one? (4) value, and send out - compensation current signal; sequence interface as the signal transmission interface of analog/digital converter; 鄕锝 change control ^4) profit = shirt 70 shift temporary storage 11 receiving paste interface transmission of the transmission ^ two The signal is distributed to the bit_output 埠 register; the width adjustment generator receives the compensation of the microcontroller, the sub-execution of the compensation current; and the lock output 埠 temporary storage 11 for controlling the pulse width

Ln二之雨出功率’以完成對每—個發光二極體 進订電流補償之動作。 。月所不,係為本發明調整發光二極體亮度裝置 之711界面與微控制器之傳輸信號圖,其係包括有-致能 ϋ (CSB)、-讀取信號(娜)、—寫人信號( 貧料信號(DATA),且嗜钤处产咕上士 1 4致^^唬、頃取信號及寫入信號係 二、、1 、、’,赉L唬致能,其各傳輪信號之間的關係為自 、及 4之功月b( Self Test Mode Function)之識別代碼(Π)) 為〇〇卜傳送6位元(Blt)驅動位址(Driver Address)後, 該没極端電壓以每九個讀取信號(咖)脈波(ci〇ck)為 口-個,期’依序經由類比/數位轉換器來轉換成為邏輯信 ^第個脈波(ciock)為類比/數位轉換器之處理信號 (Driver Address),剩下之八個脈波依照刖〜”攔位之順 序將類比/數位轉換器資料(ADCDATA)由序列界面輸出至 微處理器。 #凊苓閱圖九A所示,係為本發明調整發光二極體亮度裝 置藉由類比/數位轉換器轉換後取得各個發光二極體電壓 1298602 資料表,該資料表中發光二極體分別陳列第一發光二極體 至第η個發光二極體之類比/數位轉換資料,而該經轉換過 之電壓資料分別記載於b〇〜b7之欄位中,而該些電壓資料 可被一微控制器讀取。請再參閱圖九β所示,係為本發明調 ‘整發光二極體亮度裝置之微控制器依據圖九Α資料^詢對 ,照表以獲得Id電流值及脈波寬度調整功率之比率表,其中 微控制器讀取如圖九A之電壓資料後,再查詢如前述圖五對 照表後,以獲得各個發光二極體對應“電流值,並取其最 小值做為一基準值,基準值係指取最小電流值之發光二極 體為基準,並將高於該基準發光二極體之其他複數發光二 極體之電流值,利用脈波寛度調整方式予以降低,請參閱 圖十一所示,其係為本發明調整發光二極體亮度裝^取其 最小值做為一基準值以進行脈波寬度調整之電路架構圖, 例如··第三發光二極體213之ID電流值(20mA)為最小值, f脈波寛度調整比值為100% ;而第一發光二極體211之L電 ,值(25mA)為最大值,其脈波寬度調整比值為8〇%,因此 第一發光二極體211與第三發光二極體213相差有2〇%比 值,因此以脈波寛度調整方式予以降低第一發光二極體 2UId電流值20%,即可達到與第三發光二極體213同樣電流 值(2〇mA),依此類推,所有發光二極體皆可藉由脈波寛^ 調整降低至20mA。 ^ 睛芩閱圖十所示,係為本發明調整發光二極體亮度裝置 之=用脈波寛度調整之功能方塊電路圖,其中微處理器之 補償信號經由-N位元移位暫存器8,用以接收序列界:所 傳輸之#號’並將信號分配至複數個N位元閂鎖輸出埠暫存 * 1298602 器6,該複數個錄元_輸出蟑暫存器6,再經由負載23 (N通道金屬氧化半導體場效電晶體)之閘極⑹,來 、控制脈波寬度調整產生器之輸出功率,以使發光二極體Μ 產生均勻之亮度。 错由上述圖一至圖十一之揭露,即可瞭解本發明主 術為針對複數發光二極體所構成電路,經由備測 電 壓來做電流運算,再以脈波寛度調整(puisew;dth =dulatl〇n,PWM)方法來針對各個發光二極體進行電流補 ^而使各發光二極體之發光呈現—均勾狀態,於改善發 —極體矩陣所構成顯示面板發光不均勾現象具有極佳效 果,^提出專利權申請以尋求專利權之保護。 -綜上所述,本發明之結構特徵及各實施例皆已詳細揭 I、隹::充分顯示出本發明案在目的及功效上均深富實施 之進步性,極具產業之利用價值,且為目前市面上前所未 i二::件依專利法之精神所述,本發明案完全符合發明 唯以上所述者,料本發明之較佳實麵w已,當 ==本發=實施之範圍’即大凡依本發明申請專利 2範圍内之:ί變化飾,!應仍屬於本發明專利涵蓋 、▲ 〇凊 貴審查委員明鑑,並祈惠准,是所至 W 〇 【圖式簡單說明】 =一係為習知發光二極體以並聯方式連接電路架構圖。 圖-係為習知發光二極體以串聯方式連接電路架構圖。 1298602 圖三係為習知複數發光二極體以並聯方式連接且串接對應 之開汲極之N通道金屬氧化半導體場效電晶體做為^ 載之電路架構圖。 、 圖四、,為,發明之一發光二極體串接一N通道金屬氧化半 * &體场效電晶體做為負載之實際電路架構圖。 '圖係為圖四電路利用必要參數求出Id數值之對照表。 圊係為本叙明凋整發光二極體亮度之功能方塊電路圖。 圖七係為各個發光二極體電壓信號經由類比/數位轉換器 輸入微處理之電路架構圖。 圖八係為本發明調整發光二極體亮度裝置之序列界面與微 ^工制為之傳輸信號圖。 圖九A係為本發明調整發光二極體亮度裝置藉由類比/數位 轉換杰轉換後取得各個發光二極體電壓資料表。 圖九B係為本發明調整發光二極體亮度裝置之微控制器依 據圖九A資料查詢對照表以獲得^電流值及脈波寛度調 整功率之比率表。 >圖十係為本發明調整發光二極體亮度裝置之利用脈波宽度 調整之功能方塊電路圖。 圖十一係為本發明調整發光二極體亮度裝置取其最小值做 為一基準值以進行脈波宽度調整之電路架構圖。 【主要元件符號說明】 11〜發光二極體 12〜負載 13〜電壓源 14 1298602 14〜節點 - 15〜N通道金屬氧化半導體場效電晶體 - 21〜發光二極體 211〜第一發光二極體 . 212〜第二發光二極體 213〜第三發光二極體 214〜第四發光二極體 215〜第n-1發光二極體 • 216〜第η發光二極體 22〜節點 23〜負載 3〜微控制器 4〜序列界面 5〜類比/數位轉換器 6〜Ν位元閂鎖輸出埠暫存器 7〜脈波宽度調整產生器 _ 8〜Ν位元移位暫存器 15The rain power of Ln II is used to complete the action of compensating the current for each of the light-emitting diodes. . The month is not, is the transmission signal diagram of the 711 interface and the microcontroller for adjusting the brightness of the LED device of the present invention, which includes the - enabling energy (CSB), the reading signal (na), the writing person Signal (the poor material signal (DATA), and the hoarding of the sergeant 1 4 to ^ ^ 唬, take the signal and write the signal system 2, 1, 1 , ', 赉 L唬 enable, its various wheels The relationship between the signals is self-identification and the identification code (Π) of the self-test mode function (Π). After transmitting the 6-bit (Blt) drive address (Driver Address), the extreme is not extreme. The voltage is pulsed every nine read signals (ci 〇 ) , , , , , , , , , , , 经由 经由 经由 经由 经由 经由 经由 经由 经由 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第The converter's Driver Address, the remaining eight pulses are output from the sequence interface to the microprocessor in the order of 刖~"blocks. #凊苓图图九As shown in A, the device for adjusting the brightness of the light-emitting diode of the present invention is converted by an analog/digital converter to obtain each light-emitting diode. Pressing the 1928602 data table, the light-emitting diodes of the data sheet respectively display analog/digital conversion data of the first light-emitting diode to the n-th light-emitting diode, and the converted voltage data are respectively recorded in b〇~ In the field of b7, the voltage data can be read by a microcontroller. Please refer to Figure 9 for the display of the microcontroller of the present invention. The data is checked, and the ratio table of the Id current value and the pulse width adjustment power is obtained according to the table, wherein the microcontroller reads the voltage data as shown in FIG. 9A, and then queries the comparison table of FIG. 5 to obtain each The light-emitting diode corresponds to the “current value, and takes the minimum value as a reference value. The reference value refers to the light-emitting diode taking the minimum current value as a reference, and will be higher than other plural light-emitting of the reference light-emitting diode. The current value of the diode is reduced by the pulse wave adjustment method. Referring to FIG. 11 , the brightness of the LED is adjusted according to the invention, and the minimum value is used as a reference value to perform pulse processing. Wave width adjustment circuit architecture diagram For example, the ID current value (20 mA) of the third light-emitting diode 213 is the minimum value, and the f-pulse temperature adjustment ratio is 100%; and the L-electrode of the first light-emitting diode 211 has a maximum value (25 mA). The value of the pulse width adjustment ratio is 8〇%, so the difference between the first light-emitting diode 211 and the third light-emitting diode 213 is 2〇%, so the first light-emitting second is reduced by the pulse wave adjustment method. The current value of the 2UId of the polar body is 20%, and the same current value (2 mA) as that of the third light-emitting diode 213 can be achieved, and so on, all the light-emitting diodes can be reduced to 20 mA by the pulse wave. ^ The eye is shown in Figure 10, which is a functional block circuit diagram for adjusting the brightness of the light-emitting diode according to the invention. The compensation signal of the microprocessor is shifted to the register via the -N bit. 8, for receiving the sequence boundary: the transmitted ##' and the signal is distributed to a plurality of N-bit latch outputs 埠 temporary storage * 1298602 device 6, the plurality of recording elements _ output 蟑 register 6, and then The gate (6) of the load 23 (N-channel metal oxide semiconductor field effect transistor) controls and controls the output power of the pulse width adjustment generator to produce uniform brightness of the light-emitting diode Μ. According to the disclosure of FIG. 1 to FIG. 11 above, it can be understood that the main circuit of the present invention is a circuit for a complex light-emitting diode, and the current is calculated by preparing a voltage, and then adjusted by pulse wave (puisew; dth = The dulatl〇n, PWM) method is used to perform current compensation for each of the light-emitting diodes, so that the light-emitting diodes of the light-emitting diodes exhibit a uniform hook state, and the display panel of the hair-emitting body matrix is unevenly illuminated. Excellent results, ^ file a patent application to seek protection of patent rights. In summary, the structural features and embodiments of the present invention have been disclosed in detail. I: 充分: fully demonstrates that the present invention has deep progress in the purpose and efficacy of the invention, and has great industrial value. And for the current market, i: two:: according to the spirit of the patent law, the present invention is completely in line with the invention only described above, it is expected that the preferred solid surface w of the present invention, when == this hair = The scope of implementation is that within the scope of the patent application 2 of the present invention: ί varies,! It should still belong to the invention patent cover, ▲ 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵 贵Figure - is a schematic diagram of a circuit diagram in which a conventional light-emitting diode is connected in series. 1298602 Fig. 3 is a circuit diagram of a conventional N-channel metal oxide semiconductor field effect transistor in which a plurality of light-emitting diodes are connected in parallel and connected in series. Figure 4 is an actual circuit diagram of the invention in which a light-emitting diode is connected in series with an N-channel metal oxide half* & field-effect transistor. The graph is a comparison table of the Id values obtained by using the necessary parameters in the circuit of Fig. 4. The 圊 is a functional block circuit diagram illustrating the brightness of the lit-light diode. Figure 7 is a circuit diagram of the input micro-processing of each LED voltage signal via an analog/digital converter. FIG. 8 is a transmission signal diagram of a sequence interface and a micro-system for adjusting the brightness of a light-emitting diode according to the present invention. FIG. 9A is a table of voltage data of each of the LEDs obtained by adjusting the luminance of the LED device by analog/digital conversion. Fig. 9B is a table showing the ratio of the current value and the pulse power adjustment power of the microcontroller for adjusting the brightness of the light-emitting diode according to the reference table of Fig. 9A. > Figure 10 is a functional block circuit diagram for adjusting the pulse width adjustment of the light-emitting diode brightness device of the present invention. Figure 11 is a circuit diagram showing the adjustment of the luminance of the LED device by taking the minimum value thereof as a reference value for pulse width adjustment. [Main component symbol description] 11~Light-emitting diode 12~load 13~voltage source 14 1298602 14-node- 15~N channel metal oxide semiconductor field effect transistor - 21~light diode 211~first light-emitting diode Body 212 to second light-emitting diode 213 to third light-emitting diode 214 to fourth light-emitting diode 215 to n-1 light-emitting diode • 216 to n-th light-emitting diode 22 to node 23~ Load 3 ~ Microcontroller 4 ~ Sequence Interface 5 ~ Analog / Digital Converter 6 ~ 闩 Bit Latch Output 埠 Register 7 ~ Pulse Width Adjustment Generator _ 8 ~ 移位 Bit Shift Register 15

Claims (1)

;1298602 4·如申請專利範圍第!項所述之調整發光二極體亮度之事 置“其中δ亥複數負載係為一N通道之金屬氧化半導體p 效電晶體所構成。 —每 5·如申請專利範圍第4項所述之調整發光二極體亮度之裝 置’其中該Ν通道之金屬氧化半導體場效電晶體之= 係以開汲極連接方式加以驅動。 6·如申請專利範圍第!項所述之調整發光二極體亮度之壯 置、’其中該微控制器之補償電流至-基準值係指取最^ 電流值之發光二極體為基準,並將高於該基準發光二極 ^之其他複數發光二極體之電流值,利用脈波寬度敕 方式予以降低。 I 7·如申請專利範圍第i項所述之調整發光二極體亮度之裝 置,其中該序列界面與微控制器之傳輸信號,包括有: 8 信號、一讀取信號、-寫入信號及-資料信號。 •口申睛專利範圍第7項所述之調整發光二極體亮度之裝 其中該致能信號、讀取信號及寫入信號係為:用; 緣觸發信號致能。 負 9.如申請專利範圍第!項所述之調整發光二之壯 电壓對電流的對照表。 1〇驟厂種調整發光二極體亮度之方法,其係包括有下列步 (A)利用一類比/數位轉換器將複數節 做一類比/數位轉換; ⑻利用-微控制器逐-讀取複數節點電壓值,並查 1298602 t —對照表獲得節點電_對應之電流值,並逐一補 _至-基準值,並送出一補償電流信號; 利用序列界面做為於類比/數位轉換器與微控 制為之信號傳輸界面; (D)利用-脈波寬度調整產生器接收 電流信號,並執行補償電流之動作;以及匕之仙 埠暫存器,_制脈波寬 ❿ ^谁—Φ ώ 〇。之雨功率,以完成對每一個發光二極 體進行電流補償之動作。 70 之二、Γ明甘專利耗圍第10項所述之調整發光二極體真产 之方法,其中該步驟(c) 0日 -N位元移位暫存⑻之間更係包括有利用 ㈣八/ 接收序列界面所傳輸之信號,並將 α 至該,胡鎖輸出埠暫存器之步驟。 之方去第10項所述之難發光二極體宾产 之方法,其中該步驟(β _冗度 之元件參數所產生之t _二D係不同製程提供 王之電壓對電流的對照表。 18;1298602 4·If you apply for a patent scope! The adjustment of the brightness of the light-emitting diode is as follows: "The δ hai complex load is composed of an N-channel metal oxide semiconductor p-effect transistor. - Every 5 · Adjust as described in item 4 of the patent application scope The device for illuminating the brightness of the diodes, wherein the metal oxide semiconductor field effect transistor of the germanium channel is driven by the open-drain connection mode. 6. Adjusting the brightness of the light-emitting diode as described in the scope of the patent application. The strong compensation, 'the compensation current to the reference value of the microcontroller is based on the light-emitting diode of the current value, and will be higher than the other complex light-emitting diodes of the reference light-emitting diode The current value is reduced by the pulse width 敕. I 7· The device for adjusting the brightness of the LED according to the item i of the patent application, wherein the serial interface and the signal transmitted by the microcontroller include: 8 Signal, a read signal, a write signal, and a data signal. The brightness of the light-emitting diode according to item 7 of the patent scope is included in the device, the enable signal, the read signal, and the write signal system. For: use The edge trigger signal is enabled. Negative 9. The method for adjusting the voltage of the light-emitting diode according to the scope of the patent application is as follows: 1. The method for adjusting the brightness of the light-emitting diode is as follows: Step (A) uses a class of analog/digital converter to perform complex/digital conversion of the complex section; (8) Using the -microcontroller to read the complex node voltage value one by one, and check 1289602 t - the comparison table obtains the current of the node electricity_corresponding Value, and complement _ to - reference value one by one, and send a compensation current signal; use the sequence interface as the signal transmission interface for analog/digital converter and micro control; (D) use - pulse width adjustment generator to receive The current signal, and the action of compensating the current; and the 埠 埠 埠 埠 埠 , _ _ _ 谁 谁 谁 谁 谁 谁 谁 谁 谁 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之70 bis, the method of adjusting the true production of the light-emitting diode according to the tenth item of the patent consumption of the Γ明甘, wherein the step (c) 0-N bit shift temporary storage (8) includes Use (four) eight / receiving sequence The signal transmitted by the interface, and α is the step of outputting the lock to the register. The method of the hard-emitting diode product described in item 10, wherein the step (β_ redundancy) The t _ two D system generated by the component parameters provides a comparison table of the voltage and current of the king in different processes.
TW95103965A 2006-02-07 2006-02-07 Apparatus and method for adjusting brightness of light emitting diodes TWI298602B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95103965A TWI298602B (en) 2006-02-07 2006-02-07 Apparatus and method for adjusting brightness of light emitting diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95103965A TWI298602B (en) 2006-02-07 2006-02-07 Apparatus and method for adjusting brightness of light emitting diodes

Publications (2)

Publication Number Publication Date
TW200731864A TW200731864A (en) 2007-08-16
TWI298602B true TWI298602B (en) 2008-07-01

Family

ID=45069441

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95103965A TWI298602B (en) 2006-02-07 2006-02-07 Apparatus and method for adjusting brightness of light emitting diodes

Country Status (1)

Country Link
TW (1) TWI298602B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400679B (en) * 2008-08-04 2013-07-01 Chunghwa Picture Tubes Ltd Circuit and method for driving backlight unit
TWI419601B (en) * 2010-06-07 2013-12-11 Light emitting diode output power adjusting device and method thereof
CN111918447A (en) * 2019-05-07 2020-11-10 益力半导体股份有限公司 Adaptive Dimming Drive System

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI489906B (en) * 2012-12-14 2015-06-21 英業達股份有限公司 Controlling apparatus and light source apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400679B (en) * 2008-08-04 2013-07-01 Chunghwa Picture Tubes Ltd Circuit and method for driving backlight unit
TWI419601B (en) * 2010-06-07 2013-12-11 Light emitting diode output power adjusting device and method thereof
CN111918447A (en) * 2019-05-07 2020-11-10 益力半导体股份有限公司 Adaptive Dimming Drive System
TWI711337B (en) * 2019-05-07 2020-11-21 益力半導體股份有限公司 Self-adaptive dimming drive system

Also Published As

Publication number Publication date
TW200731864A (en) 2007-08-16

Similar Documents

Publication Publication Date Title
CN104680984B (en) Back light unit and the liquid crystal display using the back light unit
EP2093749A3 (en) Organic light emitting diode display and method of driving the same
US8217592B2 (en) Light emitting diode driving device and driving method thereof
TW200915911A (en) Driver device for LEDs
CN101494025A (en) Method of local dimming, backlight assembly for performing the method and display apparatus having the backlight assembly
TW200406608A (en) Driver circuit of display device
TW200844944A (en) Control circuit of area control driving circuit for LED light source and controlling method thereof
CN106332408A (en) Signal generation method and circuit for controlling brightness of light emitting diode
WO2016041241A1 (en) Source electrode drive circuit and display apparatus
CN106486052A (en) A kind of display control circuit and method and the household electrical appliance of display control are carried out using display control circuit
TWI298602B (en) Apparatus and method for adjusting brightness of light emitting diodes
WO2015198699A1 (en) Organic el panel control device, light source device, organic el panel control method, program, and recording medium
JP2005501273A5 (en)
TW201134292A (en) Driving apparatus of light emitting diode and driving method thereof
TWI516167B (en) Driving device, light emitting diode driving device and method thereof
CN101022687A (en) Device and method for adjusting luminous diode brightness
WO2022241827A1 (en) Driving circuit, display panel, and electronic device
CN103854623B (en) Segmented multi-path liquid crystal display achieving driving by I/O port of MCU and method
TWI249369B (en) Organic EL driving circuit and organic el display device
TWI269255B (en) Organic light-emitting diode (OLED) display and data driver output stage thereof
TW201008368A (en) Light mixing control system for LEDs
TW200910296A (en) Active display device and mixing type pixel driving method in active display device
CN101950535A (en) Light emitting device and related driving method
TW202410005A (en) Display panel
CN201311729Y (en) Current flowing demonstration device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees