1297361 13259twf2.doc/006 95-7-21 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種透明導電薄膜（transparent conductive thin film)及其製造方法，且特別是有關於一種可 撓性基材上以低溫製程形成之透明導電薄膜及其製造方 法。 【先前技術】 隨著高科技之發展，視訊產品，特別是數位化之視訊 或影像裝置已經成爲在一般日常生活中所常見的產品。這 些數位化之視訊或影像裝置中，顯示器是一個重要元件， 用以顯示相關資訊，以便使用者由顯示器讀取資訊，或進 而控制裝置的運作。 目則的顯不器多採用耐溫的玻璃作爲基材，以符合製 程上的要求。不過，在未來電腦（computer)、通訊 (communication)和消費性電子（consumer electronic)產品日 趨輕薄短小及高功能化之趨勢下，近來各界硏究之重點已 轉爲如何在可撓性塑膠基板上沈積透明導電薄膜。 但是’因爲塑膠基材屬於不耐溫的材料，所以無法採 用攝氏350度以上的高溫製程來沈積結晶度高的透明導電 薄膜。而採用低溫製程又會造成導電薄膜結晶不良，進而 導致透明導電薄膜的電阻上升’因此低溫濺鍍製程開發， 以沉積高透光、低電阻之導電薄膜’爲目前各國所競相硏 發重點。 於本國專利第489019號中曾提出以水對惰性氣體之分 1297361 95-7-21 13259twf2.doc/006 壓比於2·5χ1(Τ6〜7χ1〇-4的範圍，並控制成膜期間基板之溫 度保持在80°C以下，而於透明基板上形成透明導電膜的方 法。然後’將基板上形成透明導電膜之層積體在含有氧的 氣氛下，以80〜i5〇t：熱處理〇.5〜12小時，以獲得最終之透 明導電膜。但上述專利並未揭露「間歇式」的濺鍍技術， 而且’本申請專利之技術不需在薄膜形成後進行熱處理。 另外’美國專利1^ 6,383,345曾提出以離子束濺鍍方 式，在接近靶的地方通入一混合物作爲一初始濺鍍離子束 源，其中混合物包含惰性氣體和低電子親和力元素。然後， 在粑和基底之間提供一氧氣，以獲得最終之透明導電膜。 其中基底的溫度需維持在25°C〜10(TC之間。但是，美國專 利US 6,383,345同樣沒有揭露「間歇式」的濺鍍技術。 【發明內容】 因此，本發明的目的就是在提供一種透明導電薄膜的 製造方法，用以賦予不耐高溫的基材如壓克力基材兼具高 透明及低電阻特性。 本發明的又一目的就是在提供一種透明導電薄膜，其 具備高透光、低電阻以及非晶質或具較低的結晶度等特性。 本發明提出一種透明導電薄膜的製造方法，係藉由一 間歇式濺鍍製程於一基材上沉積一導電薄膜，其特徵在於 前沭添昍導電蓮膜是非晶質銦錫氧化物（ITO)；前述間歇式 碑餹製程夕濶鑣氫氛爲氬氣與氧氣；前述間歇式濺鍍製程 包括數段濺鍍階段以及數段中斷階段，其中各濺鍍階段以 基材受濺鍍時熱累積達其熱變形溫度（heat distortion 95-7-21 1297361 13259twf2.doc/006 tempemture，HDT)之前停止，而各中斷階段是安排於濺鍍階 段之間。 本發明又提出一種利用前述製造方法所製的透明導電 薄膜，其特徵在於這種透明導電薄膜係非晶質、透光率在 70_90%之間以及片電阻在10-500Ω/Ε] ° 本發明因爲採用間歇式濺鍍製程沉積如氧化銦錫(ITO) 薄膜的透明導電薄膜，所以能夠在低溫(基材熱變形溫度以 下），於不耐高溫的基材上形成具備高透光、低電阻以及非 晶質或具較低的結晶度等特性的導電薄膜’並可避免不耐 高溫的基材因高溫而變形與裂解。 傳統連續式濺鍍製程會有IT〇靶材因長期轟擊而導致 其中氧氣逸出，影響系統之氣氛配比，而本發明不僅兼具 有系統之氣氛配比較不受影響之優點，且膜層堆疊可利用 間歇時間來釋放轟擊應力，以提供原子及空缺移動所需時 間，而達到平衡狀態，使透明導電薄膜兼具低片電阻及不 錯的透光率。 此外，本發明除對於如壓克力材料等不耐高溫的基材 具獨特之功效外，對所有需由高溫改採低溫條件之濺鍍製 程及基材(耐溫玻璃及不耐溫之塑膠類材料)皆有不同程度 之良效。 另外，本發明之間歇式濺鍍製程，實際上可藉由旋轉 或往復方式，利用旋轉或往復速率控制亦或再輔以間歇之 時間調控來達成。 爲讓本發明之上述和其他目的、特徵和優點能更明顯 1297361 13259twf2.doc/006 95-7-21 易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細 說明如下。 【實施方式】 圖1是依照本發明一較佳實施之透明導電薄膜的步驟 流程圖。 請參照圖1，本實施例係藉由一間歇式濺鍍製程(步驟 100)，於一基材上沉積一導電薄膜，其中基材的溫度需保 持於室溫至基材熱變形溫度（heat distortion temperature， HDT)之間：舉例來說，當基材爲壓克力基材時，由於壓克 力基材之熱變形溫度約爲80°C，爲避免基材變形與裂解， 壓克力基材的溫度需被控制並保持於80°C以下。而前述間 歇式濺鍍製程1〇〇譬如包括有多段濺鍍階段（步驟102)以及 多段中斷階段(步驟104)。其中，各中斷階段1 〇4被安排於 濺鍍階段102之間，每一濺鍍階段1〇2需考量整體濺鍍膜 厚所需總時間，而每一濺鍍階段所需時間需小於濺鍍時基 材溫度上升至熱變形溫度所需時間，且每一中斷階段104 的時間，需考量平衡時間及量產效率，例如是在0.5〜90 分鐘之間。雖然圖1的步驟100中僅繪示出一個中斷階段 (步驟104)，但是這並非用以限定本發明的中斷階段1〇4與 濺鍍階段102的次數；亦即，凡是以「間歇式濺鍍製程」 的槪念形成透明導電薄膜者，均爲本發明所欲保護的範 圍’且本發明可藉由旋轉或往復方式，利用旋轉或往復速 率控制亦或再輔以間歇之時間調控來達成。 另外’本發明的間歇式濺鍍製程100可採用濺鍍設備來 1297361 13259twf2.doc/006 95-7-21 執行，如脈衝式直流電漿磁控灑鍍設備或射頻交流電漿磁 控濺鍍設備，但亦適用於各式鍍膜設備。而且，因爲本發 明能應用於所有需由高溫改採低溫條件之濺鍍製程及基 材，所以圖1之製程可應用於一般的透明塑膠基材或玻璃基 材，其中透明塑膠基材包括壓克力基材(acrylic substrate) 如聚甲基丙烯酸甲酯(polymethylmethacrylate，PMMA)、聚 酯（polyester)、聚碳酸酯（polycarbonate，PC)、聚亞醯胺 (polyimide，PI)及ARTON®等，而玻璃基材包括耐熱玻璃 等。此外，本發明所形成之導電薄膜例如包括常用於顯示 器之氧化銦錫(ITO)薄膜。 而且，採用本發明之間歇式濺鍍製程所製的透明導電 薄膜具有非晶質或具較低的結晶度、透光率在70-90%之 間、片電阻在10-500Ω/□的特性。以下即爲應用本實施例 所進行的實驗例，其中還包含習知連續濺鍍製程作爲對照 例。 實驗例 1. 鍍膜條件： 實驗例中的各組基材均爲壓克力基材、靶材則爲銦錫 氧化物(ITO)。而濺鍍氣氛爲氬氣(99%)與氧氣（1%)，其中 並未添加水或氣氣等氣體。濺鍍設備則爲脈衝式磁控電漿 濺鍍機（台灣倍強公司製），其濺鍍功率爲3〇〇w。 2. 改變條件： 作爲對照例的連續式濺鍍製程的濺鍍時間爲3000秒 (真空度5-7mtorr)，一次完成透明導電薄膜的沈積。 1297361 13259twf2.doc/006 本發明之間歇式濺鍍製程則分爲（1)濺鍍時間1000秒 (真空度5-7mtorr)，歇息調節時間0秒，循環三次(即濺鍍 總時間3000秒，三次完成），以及(2)濺鍍時間1000秒（真 空度5-7mtoir)，歇息時間1小時（真空度5Xl(T3mtorr)，循 環三次(即濺鍍總時間3000秒，歇息調節時間3小時，三 次完成)兩個實例。其中，每一中斷階段(請見圖1之步驟 1〇4)的時間係指每一次「歇息調節時間」的時間。 而以上製程所得的透明導電銦錫氧化物薄膜經測膜 厚、測片電阻及X射線繞射(x-ray diffraction，XRD)後的 結果顯7TC於下表一^。 表一 、、〜φ»、 % S \ N f f t、八"* 、 NS«V Λ/ , S ^ , 〆 連續式、間歇式(1)，間歇式(2)' 片電阻（Ω/口）： 74_4±9_6 < 44_3±16·6 24_6±1.1 膜厚(nm) 768il3 770±19 74^15 '晶態結構 丨部份結晶、非晶質 非晶質. 由表一可知，採用本發明之間歇式濺鍍製程所製的透 明導電薄膜的片電阻明顯較習知連續式的製程低，而厚度 也較薄。這是因爲連續式濺鍍的透明導電薄膜（即IT0薄膜) 之膜厚達一定程度時，IT0薄膜會因爲結晶效果而產生應 力，此種連續式濺鍍的IT0薄膜內的應力會導致其附著的 可撓性基材（壓克力基材）產生翹曲的情況，正因爲如此， 而致使IT0薄膜容易產生裂紋，使片電阻阻値升高。而本 發明之間歇式濺鍍製程因爲是利用間歇式的濺鍍方法，所 以於壓克力基材上製鍍的IT0膜不會有裂紋產生，故可使 其阻値小於利用習知方法所製得的相同膜厚的IT0薄膜。 1297361 13259twf2.doc/006 95-1-21 另外，請參照圖2，其係分別依照本發明之較佳實施例 所製以及對照例所製的透明導電薄膜之XRD圖，其中包含 只有對壓克力基材作XRD及對習知(以「連續式」表示)與 本發明（以「間歇式（1)」與「間歇式(2)」表示)所製的透明 導電薄膜作XRD。從圖2可知，本發明的方法所形成的透 明導電薄膜是非晶質的。而習知連續式濺鍍製程所製的透 明導電薄膜在XRD圖中有一個代表（440)的繞射峰 (diffraction peak)，即表示其有結晶的情形。 此外，以「間歇式（1)」與「間歇式(2)」表示的透明導 電薄膜經測量後所得之透光率分別爲87.0與85.9。因此證 實依照本發明之較佳實施例所製的透明導電薄膜亦可獲得 不錯的透光率。 綜上所述，本發明之特點在於： (1) ·本發明利用間歇式、低溫濺鍍製程，成功將IT0薄 膜沉積於不耐溫的基材上，以避免此種基材因高溫變形與 裂解。而所得的透明導電薄膜具良好光電特性，且不影響 基材性能。 (2) .本發明所形成之高透光、低電阻透明導電薄膜屬非 晶質或具較低的結晶度的結構，與傳統高溫濺鍍製程所得， 高結晶性、高透光、低電阻IT0薄膜，極爲不同，因而具 易蝕刻特性。 (3) .本發明不僅兼具有系統之氣氛配比較不受影響之 優點，且膜層堆疊可利用間歇時間來釋放轟擊應力，以提 供原子及空缺移動所需時間，而達到平衡狀態。 10 1297361 13259twf2.doc/006 95-7-21 (4) .本發明除對壓克力材料具獨特之功效外，對所有需 由高溫改採低溫條件之濺鍍製程及基材(耐溫玻璃及不耐 溫之塑膠類材料)皆有不同程度之良效。 (5) ·本發明之間歇式濺鍍製程，實際上可藉由旋轉或往 復方式，利用旋轉或往復速率控制亦或再輔以間歇之時間 調控來達成。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍內，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者爲準。 【圖式簡單說明】 圖1是依照本發明一較佳實施例之透明導電薄膜的步 驟流程圖。 圖2是分別依照本發明之實施例所製的透明導電薄膜 以及對照例之透明導電薄膜的XRD圖。 【圖式標示說明】 100、102、104 :步驟1297361 13259twf2.doc/006 95-7-21 IX. Description of the Invention: [Technical Field] The present invention relates to a transparent conductive thin film and a method of manufacturing the same, and in particular to a A transparent conductive film formed on a flexible substrate by a low temperature process and a method of manufacturing the same. [Prior Art] With the development of high technology, video products, especially digital video or video devices, have become common products in everyday life. In these digital video or video devices, the display is an important component for displaying relevant information so that the user can read information from the display or thereby control the operation of the device. The purpose of the display is to use temperature-resistant glass as the substrate to meet the requirements of the process. However, in the future, the trend of computer, communication and consumer electronic products is becoming lighter, thinner and more functional. Recently, the focus of research has shifted to how to be on flexible plastic substrates. A transparent conductive film is deposited. However, since the plastic substrate is a material that is not temperature resistant, it is impossible to deposit a transparent conductive film having a high crystallinity by a high temperature process of 350 degrees Celsius or higher. However, the use of a low-temperature process results in poor crystallisation of the conductive film, which in turn leads to an increase in the resistance of the transparent conductive film. Therefore, the development of a low-temperature sputtering process to deposit a highly transparent, low-resistance conductive film has been the focus of competition in various countries. In the national patent No. 489019, it is proposed that the water-to-inert gas is divided into 1297361 95-7-21 13259 twf2.doc/006, and the pressure ratio is in the range of 2·5χ1 (Τ6~7χ1〇-4), and the substrate is controlled during film formation. The method of forming a transparent conductive film on a transparent substrate while maintaining the temperature below 80 ° C. Then, the laminate of the transparent conductive film formed on the substrate is subjected to an atmosphere of oxygen, 80~i5〇t: heat treatment. 5 to 12 hours to obtain the final transparent conductive film. However, the above patent does not disclose the "intermittent" sputtering technique, and the technique of the present patent does not require heat treatment after the film is formed. In addition, 'US Patent 1^ 6,383,345 has proposed ion beam sputtering in which a mixture is introduced as a source of initial sputtering ion beam near the target, wherein the mixture contains an inert gas and a low electron affinity element. Then, an oxygen is supplied between the crucible and the substrate. In order to obtain the final transparent conductive film, the temperature of the substrate needs to be maintained between 25 ° C and 10 (TC). However, US Pat. No. 6,383,345 also does not disclose the "intermittent" sputtering technique. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method for producing a transparent conductive film for imparting high transparency and low resistance characteristics to a substrate which is not resistant to high temperatures, such as an acrylic substrate. It is to provide a transparent conductive film having high light transmittance, low electrical resistance, and amorphous or low crystallinity. The present invention provides a method for manufacturing a transparent conductive film by a batch sputtering process. Depositing a conductive film on a substrate, characterized in that the front conductive conductive film is amorphous indium tin oxide (ITO); the intermittent inscription process hydrogen atmosphere is argon gas and oxygen; The sputtering process includes a number of sputtering stages and a number of interruption stages, wherein each sputtering stage heats up to the heat distortion temperature of the substrate when it is sputtered (heat distortion 95-7-21 1297361 13259 twf2.doc/006 tempemture , HDT) is stopped before, and each interruption phase is arranged between the sputtering stages. The present invention further proposes a transparent conductive film produced by the aforementioned manufacturing method, which is characterized in that The transparent conductive film is amorphous, the light transmittance is between 70-90%, and the sheet resistance is 10-500 Ω/Ε]. The present invention uses a batch sputtering process to deposit a transparent conductive film such as an indium tin oxide (ITO) film. Therefore, it is possible to form a conductive film having high light transmittance, low resistance, and amorphous or low crystallinity on a substrate which is not resistant to high temperature at a low temperature (below the heat distortion temperature of the substrate) and can avoid The high temperature resistant substrate is deformed and cracked due to high temperature. The traditional continuous sputtering process will cause the oxygen to escape due to long-term bombardment of the IT target, which affects the atmosphere ratio of the system, and the invention not only has a system The atmosphere is relatively unaffected, and the film stack can use intermittent time to release the bombardment stress to provide the time required for atomic and vacant movement to reach equilibrium, so that the transparent conductive film has low sheet resistance and good permeability. Light rate. In addition, the present invention has a unique effect on a substrate which is not resistant to high temperature, such as an acrylic material, and all the sputtering processes and substrates (temperature resistant glass and temperature resistant plastic) which are required to be changed from high temperature to low temperature. Class materials) have different degrees of good results. In addition, the intermittent sputtering process of the present invention can be achieved by rotating or reciprocating means, by rotation or reciprocating rate control or by intermittent time regulation. The above and other objects, features, and advantages of the present invention will become more apparent from the description of the description of the accompanying drawings. . [Embodiment] FIG. 1 is a flow chart showing the steps of a transparent conductive film in accordance with a preferred embodiment of the present invention. Referring to FIG. 1, in this embodiment, a conductive film is deposited on a substrate by a batch sputtering process (step 100), wherein the temperature of the substrate needs to be maintained at room temperature to the heat distortion temperature of the substrate (heat Between distortion temperature, HDT): For example, when the substrate is an acrylic substrate, since the heat distortion temperature of the acrylic substrate is about 80 ° C, in order to avoid deformation and cracking of the substrate, acrylic The temperature of the substrate needs to be controlled and maintained below 80 °C. The aforementioned intermittent sputtering process 1 includes, for example, a plurality of sputtering stages (step 102) and a multi-stage interruption stage (step 104). Wherein, each interrupt phase 1 〇 4 is arranged between the sputtering stages 102, and each sputtering stage 1 〇 2 needs to consider the total time required for the overall sputtering film thickness, and each sputtering stage requires less time than sputtering. The time required for the substrate temperature to rise to the heat distortion temperature, and the time for each interruption phase 104, requires consideration of the equilibration time and mass production efficiency, for example, between 0.5 and 90 minutes. Although only one interruption phase is illustrated in step 100 of FIG. 1 (step 104), this is not intended to limit the number of interruption stages 1〇4 and sputtering stage 102 of the present invention; that is, The etch of the plating process forms a transparent conductive film, which is the range to be protected by the present invention' and the present invention can be achieved by rotating or reciprocating means, using rotation or reciprocating rate control or supplemented by intermittent time control. . In addition, the intermittent sputtering process 100 of the present invention can be performed by using a sputtering apparatus for 1297361 13259 twf2.doc/006 95-7-21, such as a pulsed DC plasma magnetron sputtering device or an RF AC plasma magnetron sputtering device. But it is also suitable for all kinds of coating equipment. Moreover, since the present invention can be applied to all sputtering processes and substrates which require low temperature conditions to be changed from high temperature, the process of FIG. 1 can be applied to a general transparent plastic substrate or a glass substrate, wherein the transparent plastic substrate includes a pressure. Acrylic substrates such as polymethylmethacrylate (PMMA), polyester (polyester), polycarbonate (polycarbonate, PC), polyimide (PI) and ARTON®, etc. The glass substrate includes heat resistant glass or the like. Further, the electroconductive thin film formed by the present invention includes, for example, an indium tin oxide (ITO) film which is commonly used for a display. Moreover, the transparent conductive film produced by the intermittent sputtering process of the present invention has the characteristics of being amorphous or having a low crystallinity, a light transmittance of 70-90%, and a sheet resistance of 10-500 Ω/□. . The following is an experimental example in which the present embodiment was applied, and a conventional continuous sputtering process was also included as a comparative example. Experimental Example 1. Coating conditions: The substrate of each group in the experimental example was an acrylic substrate, and the target was indium tin oxide (ITO). The sputtering atmosphere is argon (99%) and oxygen (1%), and no gas such as water or gas is added. The sputtering equipment is a pulsed magnetron plasma sputtering machine (manufactured by Taiwan Times Corporation) with a sputtering power of 3 〇〇w. 2. Changing conditions: As a comparative example, the sputtering process of the continuous sputtering process was 3000 seconds (vacuum degree 5-7 mtorr), and the deposition of the transparent conductive film was completed at one time. 1297361 13259twf2.doc/006 The intermittent sputtering process of the present invention is divided into (1) sputtering time of 1000 seconds (vacuum degree of 5-7 mtorr), rest time adjustment time of 0 seconds, and three cycles (ie, total sputtering time of 3000 seconds, 3 times), and (2) sputtering time 1000 seconds (vacuum degree 5-7mtoir), rest time 1 hour (vacuum degree 5Xl (T3mtorr), cycle three times (ie total sputtering time 3000 seconds, rest adjustment time 3 hours, Two times) two instances, in which the time of each interruption phase (see step 1〇4 of Figure 1) refers to the time of each “rest adjustment time.” The transparent conductive indium tin oxide film obtained by the above process. The measured film thickness, sheet resistance and X-ray diffraction (XRD) results in 7TC in the table below. Table 1, , φ», % S \ N fft, eight " , NS«V Λ / , S ^ , 〆 continuous, intermittent (1), intermittent (2)' sheet resistance (Ω / port): 74_4 ± 9_6 < 44_3 ± 16 · 6 24_6 ± 1.1 film thickness ( Nm) 768il3 770±19 74^15 'The crystalline structure 丨 partially crystalline, amorphous amorphous. As shown in Table 1, the intermittent sputtering process of the present invention is used. The sheet resistance of the transparent conductive film is obviously lower than that of the conventional continuous process, and the thickness is also thin. This is because the film thickness of the continuous sputtered transparent conductive film (ie, the IT0 film) reaches a certain level, the ITO film Stress due to the crystallization effect, the stress in the continuous sputtered ITO film causes warpage of the flexible substrate (acrylic substrate) to which it is attached, which is why IT0 is caused. The film is prone to cracking and the sheet resistance is increased. However, since the intermittent sputtering process of the present invention utilizes a batch sputtering method, the IT0 film formed on the acrylic substrate does not have cracks. Therefore, the resistance can be made smaller than the IWO film of the same film thickness obtained by the conventional method. 1297361 13259twf2.doc/006 95-1-21 In addition, please refer to FIG. 2, which is respectively according to the preferred embodiment of the present invention. XRD patterns of transparent conductive films prepared by the examples and the comparative examples, including XRD and the conventional (expressed "continuous") and the present invention (for "intermittent" (1) And "intermittent (2)") The transparent conductive film is XRD. It can be seen from Fig. 2 that the transparent conductive film formed by the method of the present invention is amorphous, and the transparent conductive film prepared by the conventional continuous sputtering process has a representative in the XRD pattern (440). The diffraction peak of the film indicates that it has crystals. In addition, the transmittances of the transparent conductive films represented by "intermittent (1)" and "intermittent (2)" are respectively measured. For 87.0 and 85.9. Therefore, it was confirmed that the transparent conductive film produced in accordance with the preferred embodiment of the present invention can also obtain a good light transmittance. In summary, the present invention is characterized in that: (1) The present invention successfully deposits an IT0 film on a substrate that is not resistant to temperature by using a batch-type, low-temperature sputtering process to avoid deformation of the substrate due to high temperature. Lysis. The resulting transparent conductive film has good photoelectric properties and does not affect the properties of the substrate. (2) The high light transmittance and low resistance transparent conductive film formed by the invention is amorphous or has a low crystallinity structure, and is obtained by a conventional high temperature sputtering process, high crystallinity, high light transmittance, low resistance. The IT0 film is very different and therefore has an easy etching property. (3) The present invention not only has the advantage that the system atmosphere is relatively unaffected, but the film layer stack can utilize the intermittent time to release the bombardment stress to provide the time required for the movement of atoms and vacancies to reach an equilibrium state. 10 1297361 13259twf2.doc/006 95-7-21 (4). In addition to the unique effect on acrylic materials, the present invention applies to all sputtering processes and substrates (temperature resistant glass) that require high temperature to change from low temperature conditions. And plastic materials that are not resistant to temperature) have different degrees of good results. (5) The intermittent sputtering process of the present invention can be actually achieved by rotation or reciprocation, by rotation or reciprocating rate control or by intermittent time regulation. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing the steps of a transparent conductive film in accordance with a preferred embodiment of the present invention. Fig. 2 is an XRD chart of a transparent conductive film prepared in accordance with an embodiment of the present invention and a transparent conductive film of a comparative example, respectively. [Illustration Description] 100, 102, 104: Steps