TWI289880B - Manufacturing process for a multilayer structure - Google Patents

Abstract

The present invention relates to a production process for a multilayer structure made of semiconductor materials, said structure comprising a substrate (20) made of a first semiconductor material and a superficial thin layer made of a second semiconductor material, the two semiconductor materials having substantially different lattice parameters, characterised in that the process comprises the following steps: producing a layer (110) comprising said superficial thin layer on a support substrate (100), creating an embrittlement zone in the ensemble (10) formed by said support substrate and said deposited layer, bonding said ensemble with a target substrate (20), detaching at the level of this embrittlement zone, treating the surface of the resulting structure.

Description

1289880 IX. Description of the Invention: [Technical Field] The present invention relates to a method of fabricating a multilayer structure composed of a plurality of semiconductor materials, the structure comprising a substrate composed of a first semiconductor material and a substrate The two semiconductor materials constitute a thin outer layer, and the two semiconductor materials have different lattice parameters in the cross. [Prior Art] This type of method is a known technique. 10 Therefore, it is known to manufacture a substrate comprising a substrate composed of, for example, a stone material, and a structure composed of a material such as bismuth-tellurium (SiGe) or even germanium (Ge). Patent application FR 0208600 in the name of the Applicant relates to a method for fabricating a structure comprising a thin layer of a semiconductor material from a wafer, the wafer comprising a lattice parameter adaptation layer, and the lattice The parametric adaptation layer comprises an overlayer of semiconductor material having a first lattice parameter, characterized in that it comprises the following stages: (a) having a second nominal lattice parameter substantially different from the first lattice parameter a layer of semiconductor material on the upper layer of the adaptation layer that grows to a minimum thickness of 20 to maintain the first lattice parameter of the layer above the adaptation layer and is thus strained; (b) having substantially the first crystal a growth of a film on a relaxed layer of one of the semiconductor materials having the same nominal lattice parameter; and (C) a portion of the wafer on the side of the adaptive layer relative to the relaxed layer to -6-!289880 In addition, it includes the following operations: • Forming an embrittlement zone to the side of the adaptation layer relative to the relaxed layer; • Power supply to the embrittlement zone for unloading from the wafer—including the relaxation layer, Special The method of applying for defects is therefore based on a layer transfer technique (especially = in SMARTCUT type or in the form of a type 8) to form a desired crystal 10 15 -曰i: Γ! One of the methods is the initial element is - wafer 'wafer' Inclusion region;: lattice f-number, the lattice parameter adaptation layer corresponding to one of the wafers "appears on its surface - substantially loose material, such as structural defects of misalignment.", no / special To carry _ is _ relaxation layer - generally means 曰曰,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Therefore, the structure is in the form of crystal Zhao =: two-conductor = :: to generate strain 'by virtue of at least one crystal lattice two: two 冋 冋 冋 此种 此种 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The method of 0208600, for example, the structure of the structure mentioned at the beginning of this article is advantageous. The purpose of the present invention is to supplement the degree of the patent application. The teaching of the 茱月茱 provides a certain 20 1289880 In order to achieve this object, the present invention proposes a system of multilayer structures Method, the structure 3 = body; material L main ramie soil and composed of the first + conductor material = two special: two semiconductor materials have substantially different crystals, characterized in that the method comprises the following steps: a layer on the support substrate that produces a layer comprising the outer surface. The vertical-brittle layer is formed by the cut substrate and the deposited layer (4) into a body. 10 15 • the entire body is bonded to a target substrate; The layers of the chemical zone are separated, and the surface of the resulting structure is processed. [Embodiment] Other aspects, objects, and advantages of the present invention will become apparent from the following description of the present invention provided by reference. 1 & to the main steps used to practice one embodiment of the present invention. Referring first to Figure la, it is shown that one of the support substrates 100 of a layer 1 (shown) has been deposited thereon. The support substrate 100 is composed of a semiconductor material having a first lattice parameter. For example, it may be composed of 矽. The layer milk system is a layer composed of a material having a second lattice parameter different from the first lattice parameter mentioned above. Thus the layer 105 can be composed of SiGe, or even. Layer 105 is said to be deposited by a technique that allows: 20 1289880 to deposit a desired thickness of a material, the lattice parameter of which is substantially different from the lattice of the substrate on which the deposit is made. Parameters; • At the same time constitute one of the outer layers of the deposit that is virtually free of defects in the misalignment pattern. 5 Document WO 00/15885, for example, teaches a method of allowing SiGe or Ge to deposit on a crucible. The deposition method can thus be performed, for example, according to the first mode, wherein the single crystal germanium Ge is deposited on one of the support substrates of the single crystal germanium by performing the following steps: 1. 使 making the temperature of the substrate of the single crystal germanium stable The first predetermined stable temperature at 400T: to 500 ° C, preferably 43 (TC to 460 ° C; • chemical vapor deposition (CVD) Ge at the first preset temperature until the position is less than one Finally, one of the thicknesses is desired to be a predetermined thickness of the base layer of Ge on the support substrate; 15 • Increasing the temperature of the chemical vapor deposition Ge from the first preset temperature to the range from 750. (: to 850 ° C, preferably From a second preset temperature of 80 (TC to 850 ° C; and • continuing chemical vapor deposition of Ge at the second predetermined temperature until a final desired thickness is obtained for the layer of monocrystalline Ge. Such a deposition method can also be realized in accordance with, for example, those disclosed in the document WO 00/15885. Other methods of obtaining a thin layer of relaxed SiGe or relaxed Ge directly on a support substrate which may be formed of tantalum It is possible. It can also refer to the publication of the bulletin. Strain relaxation of pesedomorphic Sil_xGex/Si (100) heterostructures after hydrogen or helium ion implantation for virtual substrate after hydrogen or helium 1289880 ion implantation Fabrication), B. Hollander et al., Physics 5 Research Nuclear Energy Instruments and Methods B175-177 (2001) 357-367, which is incorporated herein by reference. In this method, by making a strain layer and This layer 110 is created by relaxing this layer. The thin layer of relaxed SiGe can also be obtained by the techniques disclosed in the literature, as they disclose methods for obtaining the layer that can be implemented by the present invention. Included in the "Development of a new type of SiGe thin strained relaxed buffer based on the incorporation of carbon 15 containing layer", in "Development of a new type of SiGe thin strained relaxed buffer based on the incorporation of carbon 15 containing layer" Presented at the first SiGe Technology and Components Conference (ISTDM, Nagoya, Japan, January 15-17, 2003); —” for n-Mosfet Thin SiGe Buffers with High Ge content for n-Mosfets" (Lyutovich et al., Materials Science & Engineering, B89 2〇 (2002), 341-345); and —” with 0 - Relaxed SiGe buffers with thickness below 0.1 μm (Bauer et al., a thin solid film 369 (2000), 152-156). Returning to the method of the present invention, in all cases, a layer 110 comprising a thin layer of the outer layer comprising the desired 1289880 structure has been constructed on the support substrate 100. Therefore, SiGe (having a desired Si/Ge ratio) or one of the intermediate layers 110 of one of the Ge layers 110 included in the support substrate 100 has been completed. The free surface of such layer 100 can be polished to allow for bonding to intermediate wafer 10 to be performed in this method. The surface roughness of the intermediate wafer 10 must be indeed less than a few angstroms of rms for use in such bonding. An interface 105 is thus defined between the layer 11〇 and the support 1〇〇. In particular, it is stated that by using this type of deposition method, the defect of the misalignment type 10 15 has been limited to the region of the layer 110 adjacent to the interface 1〇5. I understand that the limitation means that most of the misalignment patterns The defect is located in this area. The remainder of layer 11G is not completely free of defects, but their concentration is compatible with microelectronic applications. Attached! Bureau: The area of the layer 110 of the faulty type of the faulty layer, the support substrate 100^^ layered by the eve: the relaxed SiGe layer has the desired to:::[This G" is about 0·5 to 1 In addition, the thickness of the powder can be in the middle of the reference. The embrittlement zone 12G is established in the thickness of the wafer. This embrittlement zone can be formed, in particular, by implanting a substance via the layer 110. 20 1289880 The substance is one or several atomic or molecular substances, such as nitrogen or gas ions or molecules. Implantation can also be co-implantation of different substances (such as argon and helium). In particular, it is stated in this article, Implantation also covers the co-implantation of at least two substances 5. When the embrittlement zone is formed by implantation, the implantation parameter can be defined as 俾 enabling the embrittlement zone to be located in the support substrate 1〇〇 As shown in Figure lb. It is also possible to define these parameters so that the embrittlement zone can be located in layer 11() itself (preferably in the region of such layer adjacent to interface 105). The embrittlement zone has also been established in the support substrate 100 before the deposition layer 110. A wafer is formed next to the region, and the wafer is bonded to the target substrate 20. The target substrate 20 may be made of germanium. 15 / The surface of the wafer 10 adhered to the target substrate To correspond to the surface of the layer 11 。. In order to perform this joint, these surfaces have been washed by / before the contact is placed and a bonding layer has been selectively inserted between these surfaces. For example, an electrical insulating layer of an oxide layer may be interposed between the wafer and the substrate. The oxide layer may not be oxidized from the surface of the target substrate 20. Similarly, if it is composed of SiGe In this case, it can start from the oxidation of the surface of the layer. If the layer 110 is composed of Ge or SiGe, it is also possible to bond it to an oxide layer by depositing an oxide layer before bonding -12-Ϊ289880. Thus, prior to bonding, the wafer and/or target substrate may be associated with an insulating layer. If desired, the surface of one or both of the substrates to be bonded may be processed to reduce the surface roughness of the substrates to a favorable The combined value (ie, no more than a few rms). This surface treatment can be a polishing step. After bonding, conventional heat treatment may be initiated to strengthen the bonding interface. This is followed by thermal and/or mechanical power. Separation of the hierarchy of the embrittlement interface. The result is a structure comprising the following elements as shown in Figure Id: • Target substrate 20; • Layer 110; and • Any residue of support substrate 1 。. The layer 110 itself comprises: • a lattice parameter adaptation layer (a portion of the layer 110 adjacent to the residue of the support substrate 1); and • a relaxed layer of a desired thickness. When implanted and formed in the thickness of the "lattice parameter adaptation layer" of layer 110, the resulting structure 3G does not contain the residue of the support substrate and the portion of the lattice parameter adaptation layer has been separated during this period. Structure 30 is separated. In this case, the surface of the resulting structure is treated (Fig. 13) to improve the surface state of layer 110 by -13 - 1289880. This surface treatment can include polishing, and other types of processing. It is also possible to perform an implantation to obtain an embrittlement zone in one of the relaxed layers 110. 5 In this case, the transfer layer does not contain defects such as misalignment (or defects only non-defective), and the structure produced after separation may have a surface layer that does not require additional processing of the bamboo (which comes from layer 110) Loose his part). In the case where the embrittlement zone has been formed in the thickness of the support substrate 1 (by implanting or by preferentially creating a porous region), the next step is to selectively etch the residue of the support substrate. This selective erosion can be a selective chemical etch that only erodes the material of the support substrate. This etching can be accomplished by a wet method (selecting a suitable etching solution) or by a drying method (selective etching through energy plasma or pulverization). This etching can be performed after polishing. At the beginning of this selective erosion, the defect corresponding to the misalignment pattern is limited to the portion of this layer 110, and the free surface of the layer 11 is treated to remove the lattice parameter adaptation layer. 20 What has been described above is the two main variants for implementing the invention (in the support substrate, respectively, and in the layer 110 to create an embrittlement zone). In both cases, the active layer of the final structure corresponds to the loose portion of layer 110. According to a third major variant, the layer 110 is actually composed of different classes (or 1289880 classes), and this layer 110 has been constructed as follows: • Deposits of the first level, for example by a document WO 00/ 15885 or the technique disclosed by the above referenced by B. Hollander et al., or generally by any other known technique for producing a lazy layer: • a deposit of the second level, which is used for chemical erosion. a stop layer; and a third layer of deposit corresponding to the relaxed layer to form the active layer of the final structure. This deposition is done with the desired thickness of the active layer. 1〇 The first hierarchy corresponds to the lattice parameter adaptation layer. It may be composed of SiGe or Ge. The second class must also: • be concerned with chemical erosion, with good selectivity associated with the third class (in this respect, classes 2 and 3 must use different materials); and 15 • from a lattice with two classes surrounding it From the point of view of the parameters, it does not cause too significant differences (in this respect, the materials of the layers 1, 2 and 3 must not be too different). For example, the following combinations can be constructed: material level 1 material level 2 material level 3 Ge SiGe (50/50) SiGe or Ge SiGe strain Si SiGe or Ge layer 1 and 3 layers are preferably made of materials of the same nature Made, 俾-15-1289880 enables the layer 2 of the layer 2 interposed between the two layers to receive the same type of restriction on both surfaces. In this case, it is preferable to use the following materials:

Material Level 2 SiGe(50/50). Ge Material Level 1 Ge

SiGe strained Si

In the third modification, SiGe is engaged in the same steps for establishing the embrittlement zone, bonding and separation of the structure 30. Therefore, the embrittlement zone can again be located in the layer 11〇. In this case, 10 15 is preferably located in the thickness of the first level (where it has been constructed by implantation). In order to obtain the final structure, two selective insults are performed: • A first selective insult to eliminate the residue of the first level. This erosion can be, in particular, a chemical attack, thereby demonstrating the insertion of a layer corresponding to one of the stop layers; and • a second selective erosion to eliminate the stop layer itself. It is also possible to form a layer 110 having only two levels, such as the first level described above and the second level like the above levels 2 and 3. In this case, the second level may be composed of strain enthalpy, and the first level is composed of SiGe or Ge. Again, the second level thus forms the active layer of the final structure, while the first order layer still constitutes the lattice parameter adaptation layer. -16- 20 1289880 The following materials (this table provided is still in this case will be able to use and the previous table as a non-limiting example):

Material hierarchy material level 2

Ge

SiGe (50/50)

SiGe strained Si 5 In all cases, conventional surface treatments can be performed after the structure of the diagram has been produced. Therefore, the present invention can be produced by a multilayer structure including, for example, a germanium-based SiGe layer. 3 It should be noted that in the case of the present invention, the layer of the layer 11 不会 does not exhibit a concentration gradient in its thickness (for example, the gradient of the concentration of yttrium is adapted to the Si supporting substrate and has a predetermined Ge concentration). Between the Ge or SiGe relaxation layers). This concentration gradient often occurs in conventional adaptation layers, which correspond to the gradient of the lattice parameters in the adaptation layer. 15 However, this adaptation layer with a concentration gradient must be quite thick (the more important the difference in lattice parameters on both sides of the adaptation layer, the thicker the adaptation layer). WO 02/15244 discloses an example of such a conventional adaptation layer having a concentration gradient. Conversely, in the case of the present invention, the adaptation layer may be thin. What is truly to be reminded is that the defect (e.g., misalignment) is limited to the area of the layer lio adjacent to the interface 105 of the support substrate 175-1289880. This particular aspect of the invention is advantageous over the known techniques disclosed, for example, in WO 02/15244. An example of the advantages associated with this aspect is the fact that such a thin adaptation layer makes it possible to construct an embrittlement zone by implanting within the support substrate 1〇〇 across the adaptation layer with the implant material. . This enables a very high quality surface to be obtained for the final structure after separating and suppressing the remaining material (si or otherwise) of the support substrate 100, without the need to process the split surface (eg, due to being located within the adaptation layer itself). The cumbersome treatment of a surface obtained by the separation of the embrittlement zone (which will be the case with an adaptive layer with gradients that are too thick to be traversed by implantation). It should also be noted that the structure obtained by the present invention is an example of a defect of a misalignment type, even in an embedded region. - Again, the resulting structure can then be used to grow a complementary layer such as strained stone on the SiGe or Ge layer by telecrystals.

In the case where the layer of the layer 2 is composed of strained stone, it is advantageous to perform single selective etching in order to preserve the final structure composed of the strained Si-SiGe double layer on the stone substrate.疋 20 ▼...In, and the mouth, Dan j is thick. Finally, it is also possible to deposit strain (4) on the layer of level 3, including the structure of the (four) layer on the (four) board, before joining this structure to the upper portion of the target substrate. -18- 1289880 BRIEF DESCRIPTION OF THE DRAWINGS Figures la to le show the main steps for carrying out an embodiment of the present invention. 5 [Description of code description] 10~ intermediate wafer 20~target substrate 30~structure 100~support substrate ίο 105~layer/interface 110~layer 120~brittle zone -19-

Claims (1)

1289880 Patent Application No. 92134368 also ROC Patent Appln. No. 92134368 Chinese application for patents without a scribe line Replacement - Annex (III) Amended Claims in Chinese - Encl. (III) (Feeded on January 12, 1996 (Submitted on January 12, 2007), the scope of application: [• A method of manufacturing a multilayer structure composed of a plurality of semiconductor materials, the structure comprising a substrate (2〇) composed of a first semiconductor material 5 and a thin layer of a second semiconductor material having substantially different lattice parameters, the method comprising the steps of: generating the inclusion on a support substrate (100) a layer (110) of the outer sheet; an embrittlement region is established in the entirety (10) formed by the support substrate and the deposition layer; the entirety is bonded to a target substrate (20); The hierarchy is separated; and the surface of the resulting structure is treated. 2. The method of claim 1, wherein the step of creating a layer 15 is performed by epitaxy. 3. The method of claim 2, wherein the epitaxy is performed by using the following steps: stabilizing the temperature of the support substrate to a first predetermined stable temperature; Chemical vapor deposition at a temperature until a layer (11 Å) containing a thin outer layer is obtained to obtain a substrate layer on a support substrate having a predetermined thickness less than one of the final desired thicknesses; The temperature of the vapor deposition is from the first predetermined temperature to a second predetermined temperature, and the chemical vapor deposition is continued at the second predetermined temperature until a final expectation is obtained for the layer. Thickness up to now. The method of claim 3, wherein the first predetermined temperature is about 400 ° C to 500 ° C and the second predetermined temperature is about 750 ° C to 850 ° C. 5. The method of claim 4, wherein the first predetermined temperature is about 430 ° C to 460 ° C, and the second predetermined temperature is about 800 ° C to 850 ° C. . 6. The method of claim 1, wherein the layer is created by creating a strained layer and by relaxing the layer. The method of any one of claims 1 to 6, wherein the production of the embrittlement zone is performed by implantation. 8. The method of claim 7, wherein the implant is a co-implantation of at least two substances. 9. The method of claim 7, wherein the implant system 15 is executed between a production phase and a bonding phase. 10. The method of claim 9, wherein the performing the implant is capable of defining the embrittlement zone in the thickness of the support substrate. 11. The method of claim 9, wherein performing the implantation of the enthalpy defines the embrittlement zone in a region corresponding to a layer (110) of the lattice parameter adaptation layer. 12. The method of claim 9, wherein performing the implantation of the crucible defines the embrittlement zone in a region corresponding to the layer (110) in which the relaxed layer is constructed. The method of any one of claims 1 to 6, wherein the method of the invention is characterized in that an electrical insulating layer is formed by inserting a supporting substrate and a deposition layer before bonding. The method of claim 13 is the method of claim 13, wherein the method of claim 13 is characterized in that an electrical insulating layer is formed by bonding 5 15 20 The method of claim 13, wherein the method of claim 13 is characterized in that an electrical insulating layer is formed on the target substrate before bonding. Port 16. The method described in claim 13 of the patent scope is characterized in that the edge layer is an oxide layer. Electric,,,,,,,,,,,,,,,,,,,,,,,,, The substrate (20) having a multi-layer structure is composed of ruthenium, and the method thereof is as claimed in the scope of the patent application No. 6 to 6 - the support substrate (1 〇〇) is composed of Shi Xi. , the method of Μ 其 、 • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • The layer (1) is a method of SiGq, which is constituted by any of the items i to 6 of the patent application scope. The characteristic is that when the layer is being formed, the method described in the item, In the case of this layer, the formation corresponds to the lower Xuangu's characteristic as when it is forming! Layer: the lattice parameter adaptation layer is layer: Yan Bai Layer 2 · Stop layer; and 22. Active layer of the structure as claimed. 申—(四)Mat material “Temple test is the material corresponding to the layer of the three levels of the '22- 1289880. : material level 1 material level 2 material level 3 Ge SiGe (50/50) SiGe or Ge SiGe strain Si SiGe or Ge 23. The method according to claim 22, which is characterized by corresponding to the five levels The material of the layer constitutes one of the following combinations: material level 1 material level 2 material level 3 Ge SiGe (50/50) Ge SiGe strain Si SiGe 24. The method according to claim 20, characterized in that The stop layer is retained in the final structure. Ίο 25. The method of claim 21, wherein the stop layer is retained in the final structure. 26. The method of claim 19, wherein when the layer is being formed, two levels corresponding to the following are formed: Level 1: lattice parameter adaptation layer; and 15 level 2: The active layer of the structure obtained. 27. The method of claim 25, wherein the material corresponding to the layers of the two levels constitutes one of the following combinations: material level 1 material level 2 Ge SiGe (50/50) SiGe strain Si -23 - 1289880 VII. Designated representative map: (1) The representative representative of the case is: (1). (2) A brief description of the components of the representative drawing: 10~ intermediate wafer 20 to target substrate 30 to structure 100 to support substrate 105 to layer/interface 110 to layer 120 to embrittlement area 8. If there is a chemical formula in this case, please Reveal the chemical formula that best shows the characteristics of the invention: