TWI282635B - GaN-based light-emitting diode and luminous device - Google Patents

Abstract

This invention provides a GaN-based light-emitting diode of which luminous efficiency is improved and a luminous device using the same. In the present invention, a luminous layer (3) composed of GaN-based semiconductor and a p-type GaN-based semiconductor (4) are formed in order on a n-type GaN-based semiconductor layer (2), and in appearance of the p-type GaN-based semiconductor (4), a p-type ohmic electrode (P2) is formed as a pattern with window, and a reflection layer (P5) of metal for reflecting light from the luminous layer (3) passing through the window is formed to interpose the p-type ohmic electrode (P2) with the p-type GaN-based semiconductor layer (4), and a protection film (P4) composed of insulation material is interposed between the reflection layer (P5) and the p-type ohmic electrode (P2). In a preferable embodiment of the GaN-based light-emitting diode, the most surface layer of the reflection layer (P5) is used as bonding layer, or the bonding layer is furthermore formed over the reflection layer (P5), and the bonding layer and base material for mounting are joined by conductive joining material.

Description

[Technical Field] The present invention relates to a GaN-based light-emitting diode body that improves luminous efficiency and a light-emitting device using the same, and a GaN-based light-emitting diode. A light-emitting diode (hereinafter also referred to as a "GaN-based LED") is a semiconductor having a pn junction diode structure in which a light-emitting layer composed of a GaN-based semiconductor is sandwiched between a p-type and an n-type GaN-based semiconductor. The illuminating element® can emit red to ultraviolet light by selecting the composition of the GaN-based semiconductor constituting the luminescent layer.

The GaN-based semiconductor is a compound semiconductor composed of a group III nitride determined by a chemical formula of AlaInbGai.bN (0, a$; 1, OS 1, 〇 $ a + b$ 1 ), and examples thereof include GaN, InGaN, and AlGaN. Any composition such as AlInGaN, A1N, or InN. Further, in the above chemical formula, boron (b), ruthenium (T1) or the like is substituted for a part of the group III element, or phosphorus (p), arsenic (As), ruthenium (Sb), bismuth (Bi) or the like is substituted. A part of N (nitrogen) is also included in the GaN-based semiconductor.

The GaN-based LED can be a metal organic Vapor Phase Epitaxy (MOVPE) method, a Hydride Vapor Phase Epitaxy (HVPE) method, or a molecular beam epitaxy (MBE) method. In a vapor phase growth method, an n-type GaN-based semiconductor layer, a light-emitting layer, and a p-type GaN-based semiconductor layer are sequentially stacked on a crystalline substrate composed of sapphire or the like, and then The GaN-based semiconductor layer is formed by forming an electrode on each of the p-type GaN-based semiconductor 5 317713 1282635 ι layers. In the present specification, when the vapor phase of the GaN-based semiconductor layer is grown, the crystal substrate is positioned on the lower side, and a GaN-based semiconductor or layer is deposited thereon, and the difference between the upper and lower sides is also applied to the description of the element structure. Further, the direction orthogonal to the vertical direction (also the thickness direction of the substrate or the semiconductor layer) is also referred to as the lateral direction. Further, the P-type GaN-based semiconductor layer is simply referred to as a p-type layer, and the 11-type GaN-based semiconductor layer is simply referred to as a ^-type layer. Further, the ohmic electrode of the Ρ-type GaN-based semiconductor is also referred to as a p-type ohmic electrode, and the ohmic electrode of the n-type GaN-based semiconductor is referred to as an n-type ohmic electrode (n_type Ghmie eleetr). There is a G a N-type LED in which an n-type layer, a light-emitting layer, and a p-type layer are sequentially laminated on a transparent substrate, and light transmitted through the light-emitting layer is disposed on the p-type layer. A p-type ohmic electrode formed by the method and a reflection of the Japanese Patent Publication No. 2004-119996). [Invention] The GaN-based ohmic % described in the Japanese Patent No. 4, No. 11-9996 has a P-type (P) formed on the surface of the I-type layer, and the P-type is directly covered by the second/top. A reflective layer composed of AI (aluminum). A1 is a member of the GaN-based LED; the typical emission wavelength of the GaN-based LED is one of the metals having the highest reflectance in the green to the near region. Therefore, the light extraction efficiency of the GaN-based LED can be improved by the use of such a structure. But one side

Lit::, in the formation, by the formation of the ohmic electrode, the position of the ohmic electrode is generally ..., the diffusion of A1 into the interior of the P-type ohmic electrode or the p 317713 6 1282635 • the interface between the electrode and the p-type layer Two: , caused by the whole:::::: Reduced 'when ~ high efficiency, is to solve the above problems of the conventional technology and research, to provide a kind of GaN-based LED to improve luminous efficiency.

The present invention has the following features: M luminescence, a GaN-based light-emitting diode, comprising: an n-type GaN-based semiconductor layer; a 糸 main light-emitting layer ′ is formed on the n-type GaN-based semiconductor layer and is made of GaN 糸+ Conductor composition; P-type GaN-based semiconductor layer formed on the light-emitting layer; P-type ohmic electrode, where? The surface of the GaN-based semiconductor layer is formed into a pattern having a window portion; • a metal reflective layer to which? a GaN-based semiconductor layer is formed by interposing the p-n-plum electrode, and reflects light that is transmitted by the light-emitting layer through the window portion; and a protective film is disposed on the reflective layer and the P-type ohmic Between the electrodes and consisting of an insulator. (2) The GaN-based light-emitting diode according to (1) above, wherein the outermost layer of the reflective layer is a bonding layer (or ayer), or a metal bonding is formed on the reflective layer. Floor. (3) The GaN-based light-emitting diode according to (2) above, wherein the bonding layer is a layer composed of Au, an AU alloy, or a Sn alloy. The GaN-based light-emitting diode of the above (3), wherein the reflective layer of at least the portion of the light that is reflected by the light-emitting layer is made of Ag, Ag alloy, and Babu A1 alloy. Or formed by the elements of the Platinum. (5) The GaN-based light-emitting diode according to (3) above, wherein the reflective layer of at least a portion of the light that is reflected by the light-emitting layer is made of Ag, Ag alloy, A1 or Al alloy. Formed, and a barrier layer 1 is interposed between the portion and the bonding layer. Φ (6) is a light-emitting diode of the uranium, wherein the protective film has a film thickness of 1//m. (7) The GaN-based light-emitting diode according to (1), wherein the protective film has a lower refractive index than the p-type GaN-based semiconductor layer. (8) The GaN-based light-emitting diode according to (1) above, wherein the reflective layer of the portion that reflects at least the light that is reflected by the light-emitting layer of the moon is

The Agj Ag alloy, the gossip or the barium alloy are formed, and the p-type ohmic electrode is a p-type ohmic electrode containing Au. (10) The light-emitting diode according to the above (1), wherein the p-dusty I-pole includes a portion composed of Ni, Ti or Cr at a portion in contact with the protective film.

The aforementioned P

The GaN-based light-emitting diode of the above (1), wherein the film thickness of the ohmic electrode is 60 nm to 1 #m. 〇1) The GaN-based light-emitting diode according to (10) above, wherein the film thickness of the ohmic electrode is 100 nm or more. </ RTI> 317713 8 1282635. The luminescent layer is composed of InxGa]_xN (in the case of x=〇) having an emission wavelength of 420 nm or less. λ _ () The GaN-based light-emitting diode system of Hosei (2) is fixed to the mounting surface of the mounting substrate with the bonding layer facing the mounting surface, the bonding layer and the mounting The substrate is a light-emitting device according to the above (13), wherein the bonding by the conductive bonding material is formed by soldering. (15) The light-emitting device according to (13) above, wherein the bonding by the conductive bonding material is formed by eutectic bonding. [Embodiment] Hereinafter, the present invention will be specifically described with reference to the drawings. "The first figure shows the structure of the GaN-based LED according to the embodiment of the present invention = mode diagram, the first! Fig. 4 is a top view, and Fig. J (8) is a cross-sectional view in the χ-γ line. _ In the first figure, i is a crystalline substrate, 2 is an n-type layer, 3 is a light-emitting layer, and the germanium layer is 'Ρ1 is an n-type ohmic electrode, and 卩2 is a p-type ohmic electrode, Μ., ,,Ρ The bonding electrode 'Ρ4 is a protective film composed of an insulator, and μ is a crystalline substrate 1 such as a sapphire substrate. The n-type layer 2 is, for example, a GaN layer having a film thickness of 3 // m which is (3 Hz) with a concentration of 5 χ 1 〇 IW3. The luminescent layer 3 is, for example, an MQW formed by depositing a (four) barrier layer having a thickness of 8 faces and an InGaN well layer having a film thickness of 10 layers in each of the s layers (multiple quantum 317713 9 1282635 well (MultiQuantum Well) )Floor. The P-type layer 4 is, for example, a laminate of a GaN layer having a thickness of 3 μm, a Ga 〇 9 N layer, and a Mn layer of 200 nm, and a bean J 』 』 ^ ^ ^ ^ ^ - λ Τ μ Al〇.iGa0 The .9N layer is a layer of tantalum GaN layer doped with Mg (magnesium) with a wavelength of ΐχ ι〇Ι9 ^ , ^ r μ ^ ^ cm with the side in contact with the first layer 3 and p-type ohm ν 1Π19 -3 ΛΑ ^ ^ , the side of the contact with the Ρ 2 is used as a layer doped with Mg (magnesium) at a concentration of 5 X 10 cm. It is preferable to arrange a buffer layer (not shown) composed of GaN or AlGaN 2 between the crystal substrate 1 and the n-type layer 2. The n-type ohmic electrode P1 is formed by, for example, laminating a side of the abdomen film 2 with a thickness of 3 Gnm and a Pm of 100 nm (palladium, ruthenium 100 nm Au (gold), film house) by 盥n. ηηΛ, ,)) thick

Ami's Pt (five), thick film

Au is formed by heat treatment. The P-type ohmic electrode P2 is, for example, 蛊 山 丄 丄 丄 丄 . . . . . . 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 接触Au of 〇nm and Ni (nickel) of membrane rhinoceros 10_ are heat-treated and formed into four types of 〇nm; the electrode film of degree is formed as a pattern with a window portion by a non-ohmic electrode P2, and the ruthenium layer 3 The light produced is permeable. The window part means that it does not exist in the example of Fig. 1 . The ohmic type (4) is formed as Π θ. The size of the t-like pattern is, for example, the window portion is set to the side 8 "out = shape, and the interval between the adjacent window portions (the width of the electrode film portion) is set to be vertical and horizontal. 2 // ni. ° Further, the Ni film formed on the outermost surface of the 欧姆-type ohmic electrode Ρ 2 is used to improve the adhesion to the protective film P4. It is also possible to use Ti (titanium) for the adhesion-welding layer. Layer or Cr (chromium) layer b 317713 10 1282635 P-side bonding electrode! &gt; 3 For example, the side of the contact of the electrode of the m electrode is sequentially connected to the layer of the p-type layer 4 and the P-type layer of Au, and the heat treatment is performed. Ti, 2 〇 nm of Ti, film thickness 6 m m 保 的 的 的 的 300 y y y y y y y y y y y y y y y y y y y y y y y y y y 制 制 制 制 制 制 制 制 制 ή 制 ή ή ή ή ή ή ή The side is sequentially laminated with a layer of 100 nm a-film of the pancreatic valley and a laminate of 曰, ^ 1 GGnm_, film thickness (10) (10) on the Ga]sj gold τ 所示 shown in the figure 1 In the 曰N糸LED, the first main 产生 generated in the luminescent layer 3 is directly or internally reflected by the crystallization substrate 纟, and is discharged out to 70. The luminescent layer 3 ohms is carried out to the upper side. The light system is reflected under the p-type surface or the reflective layer Ρ5, and the protective film Ρ4 is formed by S1〇2 under the σ. The refraction of Si〇2 is lower than that of the GaN-based semiconductor, so the p-type layer 4 is In the interface of the protective film P4, reflection due to the difference in refractive index improves the effect of improving the light extraction efficiency. Since Si〇2 is an insulator, the light absorption is small, so that light generated in the light-emitting layer passes through the protective film. At 4 o'clock, or when the interface between the p-type layer 4 and the protective film material is reflected, the loss is extremely low. The process of the GaN-based LED shown in Fig. 1 is first described. First, in the crystal substrate 1 On the growth surface, the buffer layer, the n-type layer 2, the light-emitting layer 3, and the 卩-type layer 4 are sequentially grown using the MOVPE method, the HVPE method, the MBE method, etc. After the p-type layer 4 is grown, the p is required as needed. The type of layer * is reduced in resistance to 'annealing' or the like. Fig. 2(a) is a top view of the wafer in which the growth of the p-type layer 4 is completed. Square 317713 11 1282635 shows only the equivalent of - The area, only the round unit ^^2 and (4) and the third dry two-pair layer 4 of the growing wafer 'first as shown in Figure 2(b) , 2: into 13 ^ m electrode! &gt; 2. The formation of the electrode film can be used using the well-known eVaporation method, splashing (such as (four) method, cvd patterning of the film can be used - General light micro: (ph〇tollth〇graphy) technology to carry out. For example, in the p (four) layer: forming a photoresist (Ph〇toresist) film, #自光微影技术^电鸠鸠广,口口的图案, Use the electron beam evaporation method to remove the film after the crucible. Ff) Method of photoresist film. Further, it is also possible to etch the unnecessary portion after the electrode is formed. The pattern formation of the n-type ohmic electrode P1, the P-side bonding electrode P3, the protective film P4, and the reverse layer P5 can also be carried out by the same method. : P-type ohmic electrode P2, [removing the p-type layer 4 and the light-emitting layer 3 由 portion from the surface side of the p-type layer 4 by using the reactivity of chlorine gas from the J method, as shown in Fig. 2 (4), The layer 2 is exposed. This step may be performed immediately before the n-type ohmic electrode P1 to be described later is formed. ^ ^ ^ As shown in Fig. 3(d), a protective film P4 composed of an insulator is formed to cover the p-type ohmic electrode p2 and n P. According to the type of the protective film, the film forming method can be suitably subjected to a CVD method, a wheel method, or a base film method. It is also possible to use a seat method such as a sol-gel (s〇1_gel) method. A preferred film forming method for forming the protective film p4 with Si〇2 is a plasma CVD method in which pinholes are difficult to produce. Next, as shown in Fig. 3(e), a reverse layer 317713 12 1282635 is formed on the surface of the protective film p4. The shape of the reflective layer p5-sputtering method, CVD, &gt; the use of Baizhi's Luo plating method, the edge of P5 = two in Figure 3 (4), although the reflective layer is necessary: the edge of the opposite P4 However, the formation is not the case, and the reflective layer P5 is exactly the same as the protective film P4. The surface of the type layer 4 is in contact with the 'divided shape' type ohmic electrode P1 P interface interface private pole P3. The n-type ohmic electrode is etched by the ionic electrode to expose it: the error is formed by the reverse. The equal electrode # is formed by a pure ^ (four) partial electrical connection. It can be formed by either side first. Pair; using a known steaming method, sputtering method, cv pair:: plate can form the PW interface electrode P3 into a round For the whole 5 minutes, the heat treatment of the electrode and the GaN-based heat treatment with the heat treatment of 400 C after the 隹 thousand μ is also effective. The effect of improving the adhesion between _P4 and the reflective layer p5 is further improved for the 11-type ohmic electrode. With the p emperor, the car plugged from the 4th you Λ ^ 黾 黾 ' ' In order to reduce the material J does not do t ^ good, but in the electrode material, for the use of c: 迠 also get practically low contact In the case of a resistor for a two-electrode material, heat treatment is not required. Moreover, the heat treatment, the electrode and the member other than the p-type ohmic electrode do not need to be heat-treated, and the crystal substrate is used in the "limbs". After the thickness of the substrate is thinned, the substrate 1 is subjected to separation by means of scribing, 317713 13 1282635 dicing, laser fusing, and the like. In the above, the configuration and process of the GaN-based LED according to the embodiment of the present invention will be described with reference to Figs. 1 to 3, but the present invention is not limited to the above-described configuration. The crystal substrate may be any substrate that can be used for epitaxial growth of the GaN-based semiconductor layer. In addition to the sapphire substrate, preferred crystal substrates include Si, SiC, GaN, AlGaN, ZnO, and A1N. a substrate composed of GaAs, GaP, ZrB2, TiB2, spinel, NG0 (NdGa03), Lu LG0 (LiGa02), LA0 (LaA103), or the like, or a crystal layer composed of such a material as a surface layer Substrate. The crystal growth surface of the processed crystal substrate is formed as a concave-convex surface, and a mask that hinders the growth of the GaN-based semiconductor crystal is partially formed on the surface, and the GaN-based semiconductor crystal can be grown in the lateral direction. The crystal which grows in the horizontal direction becomes a high-quality crystal having a low dislocation density. • The crystal substrate used for the growth of GaN-based semiconductors can also be removed during the manufacturing process of the device or after the wafer-formed components are mounted. The laminated structure composed of the n-type layer, the light-emitting layer, and the p-type layer is recombined in the light-emitting layer by an n-type carrier implanted in the n-type layer and a p-type carrier implanted in the p-type layer. When it is formed by light emission, the crystal composition, the layer thickness, the type and concentration of the added impurities, and the like may be preferably referred to by a conventionally known technique. Preferably, the n-type layer and the p-type layer having a larger band gap than the light-emitting layer sandwich a double hetero-structure of the light-emitting layer. Moreover, the luminescent layer is preferably constructed with a single quantum well (SQW, 14 317713 1282635, ϊ1, qua café 'weII) or multiple quantum wells _w). The e / Ή layer can be used as a multilayer structure in which a layer having a different function of an elad layer, a contact layer, or the like is laminated. - For the P-type ohmic electrode, the main material jxil χτ ^ is used as the electrode for the low-contact resistance of the p-type GaN-based semiconductor. - , 3 Au P-type ohmic electrode is known to contact with (4) semiconductors. 2: Other: The best p-type ohmic electrode. Cardiac monomer group

Jade H, or an alloy composed of an alloy containing Au as a main component, or a layer of Ni and P

An Au-based electrode formed by heat treatment of Rh (铑), Pt, T1 or the like selected from the above five genus M Au.匕3. The P-type ohmic electrode of Au has a low melting point of Au and is easily affected by the diffusion of constituent materials of the reflective layer. Therefore, the configuration of the present invention in which a protective film is interposed between the reflective layer and the reflective layer is particularly effective when a p-type ohmic electrode including AU is used. The human m and / = human even reacted at a lower temperature to form a metal-to-metal... such as a P-type ohmic electrode and a composition of M from A1, by the general teaching process performed at the formation of the ohmic electrode, ... type ohm The problem that the characteristics of the electrode are significantly deteriorated. Therefore, it is particularly effective to combine the P-type ohmic electrode with the reflective layer in combination with the layer of the present invention comprising m. The reflection of the electrode and the composition of A1. Other preferred P-type ohmic electrodes are exemplified by two or more types of electrodes composed of a laminated monomer or alloy and a platinum group element. The Platinum element is excellent in the reflection of visible light to near-ultraviolet light. 317713 15 1282635 is excellent in nature. The light emission effect of the LED is as follows. If the uppermost layer of the P-type ohmic electrode is a layer of _, it is composed of an insulator composed of - and a few dollars. Therefore, the == property is low. The protective film is formed in a portion of the Ni, Ti, and Cr dom electrodes that is in contact with the protective film. The formation of the temple is preferably 〇Ni, Ti, or a metal oxide or a metal nitride. The meaning of the protective film of the montmorillonite is such that the characteristics of the element, &quot;妾^°, are improved by the suppression of the P-type ohmic electrode. The light absorption produced by the % pole becomes smaller, and the light wire made by the piece is made higher. The damage caused by the money is low, so the film thickness of the ρ-type ohmic electricity (four) is not limited, and the thickness of the high transparency is 20 Å or less. However, if the :-type ohmic electrode of the thickness is formed into a pattern having a window portion, the sheet resistance is too high, even because the wafer's sizing is insufficiently diffused to the corner of the wafer. The problem. "In order to reduce the sheet resistance of the P-type ohmic electrode, the film thickness is 6 () nm or more = toward =

The above is better. If it is set to 100_ or more, the light is injected into the electrode film portion of the electrode film: it is also reflected by the electrode film, so the light-emission efficiency of the element is changed. The reflection of the right light transmitted through the electrode of the p-type ohmic electrode. In addition, in the GaN-based LED of the present invention, the p-type ohmic electrode 317713 16 1282635 7 has a pattern of a window portion. Therefore, in order to suppress the heat caused by the p-type layer and the protective film sandwiching the metal: = Deterioration of the wheel, as described above, preferably the P-type ohmic electrode = more preferably 100_ or more. 〕 Pancreas is 60 faces at = 4: Suitable? The linear expansion rate of the metal of the ohmic electrode is approximately in the range of X 10 K to 2 x 1 〇 -5 K -], and the 仏:: expansion ratio is 5.6 χ 1 〇 6 〜 6 = metal oxide or metal nitrogen in the GaN The linear expansion rate of the compound is 2 V 〇 K·1 or less. Such a P-type ohmic electrode sandwiched between a P-type layer and a protective film having a linear expansion ratio smaller than itself, if heated during the process or during use of the component, is then cooled: = becomes Strong tensile stress. At this time, the film thickness of the electrode film is as follows: The electrode film is liable to cause large deformation or destruction due to a stress migration phenomenon or the like. In particular, in the pattern type ohmic electrode formed as a window portion, the current diffusion function is greatly affected by the large-scale deformation or breakage of the electrode film. ^The current spreading function of the electrode is lowered', and the rise of the operation of the element, or the unevenness of the luminescence due to the concentration of the current, or the local heat generation, and the decrease in the luminous efficiency caused by the S heat generation may occur. The problem of reduced component life. Therefore, the effect of increasing the film thickness of the P-type ohmic electrode is in the formation side; the material of the protective film thereon makes the M Si02 more remarkable. This is because s] 〇 2 is also a material having a particularly low linear expansion ratio in the material of the preferred protective film. Further, the effect of the side effect on the p-type ohmic electrode is enhanced by the adhesion of the protective film 317713 17 1282635, and the composition of Ni, Ti, Cr, etc. is enhanced. This is due to the difference in thermal expansion rate; the ohmic electrode is caused by the higher stress of the upper + self-protecting lean pancreas. On the other hand, the right side of the p-type electrode film is easily removed by the surface of the p-type layer, and the film thickness of the electrode is 1//m / , . 7 P type ohmic power is particularly good. # M下优选, 5()()_ is better, _咖咖 has ^==_€极_ ’ in the LED process, the field is formed on the P-type layer to have

The upper surface of the ohmic electrode forms a light, and the P is removed or falls off, and the process of peeling off the photoresist is formed by, for example, the first opening 13 The state shown in Figure 2 (b) can be used in the PM 4 mask): resistance, at '. In this process, the engraved mask (10) hing Μ owed to the p-type sound of the engraved processing, the first version of the cover is removed to remove the film from the 层-type layer 4 = layer:: part of the surface. That is, the photoresist and/or the uneven surface formed of the Tuwei electrode P2 having the window portion thereon (the window P of the P-type ohmic electrode P2 = concave: the electrode film portion becomes a convex portion) It is formed as a base surface, and the smaller the film thickness is, the closer the base surface is to the flat surface, so that the jointability is improved, and the segregation is suppressed. The following film thickness of the ohmic electrode is 500 nm J ruthenium two birds, and the following is better. If the p-type ohmic electrode is reduced as described above, the same effect can be suppressed by covering the p-type ohmic electrode 317713 18 1282635=The peeling of the photoresist film and the pattern of the window portion when the light is formed on the formed film is an example of the electrode film being a mesh, a branch, a comb, a radial, a spiral, A pattern of a meandering shape, such as a mea, a shape, etc. - a drawing of a mesh pattern having a square window portion, and an example of a mesh pattern having a circular window portion, and Fig. 4 (4) (4) An example of a mesh pattern of a ring pattern and a radial pattern, a j-th image, an example of a meander pattern, a fourth example of the comb-like pattern of the fourth figure (4), and a first example (7) of a branch-like pattern. The pattern is a mesh pattern. These patterns can also be mixed. In the case of any pattern, the electrode film portion or the window portion (10) portion or the window portion is formed into a band shape or a dot shape is formed. The width of the aspect is preferably 1 (four) to better, and m to # m is better, to 2 // m to 15 / ill is particularly good. When the ohmic electrode is formed into a pattern having a window portion, the area ratio of the pattern is preferably 2 G% to 8 G%. The surface of the window portion is formed. The current locally uses InxGaj'd) in the light-emitting layer at a high current density in the element of the light-emitting layer, and the lower the voltage is, that is, the shorter the light-emitting wavelength, the current density (shift) and the efficiency. The smaller the 'lower' and the lowering of the wavelength of the illuminating wavelength, the gentleman's, because of the (four) combined drive at high current density, thus, ie, x=〇, ιί:)::: InxGai-xN (including /,, into, in the luminescent layer of the region where the illuminating wavelength is in the range of purple to near ultraviolet (about 420 nm 317713 19 1282635 f about 365 nm), the area ratio of the window is 60% to light: rate: high good The current density causes the - part of the light-emitting layer to operate, and is advantageous for hair--in addition, if the area ratio of the window portion is 60% or more, since the width of the electrode film is narrow, the rate of thermal expansion of the two-winding is caused. Poor thermal stress is easy to cause deformation or damage of the electrode ,, and when the deformation or destruction occurs, the energy can drop. The low is more significant. For the τ^" wide release work, the film thickness is _ fine or better. This question continues to make the 5-type ohmic electrode of the brother 5 map is not a green suppression view of the invention. In the case of a 5 円J GaN-based LED, the protective film P4 does not completely cover the surface of the layer 4 of the gate electrode P2, in the surface of the layer 4 of the gate electrode P2; The surface is in contact with the reflective layer p5, and the characteristics of the Ρm electrode Ρ2 are deteriorated by the diffusion of the constituent material of the === reflective layer. 5. In the layer pattern or the element shown in Fig. 5, if the refractive index is The p-type layer 4 is protected by a protective film P4 composed of an insulator. At this interface, the light-induced loss of the light-reverse LED due to the refractive index difference is smaller than the reflection on the metal surface, so that the ratio is better than the p-type η. Therefore, the protective film P4 is formed by refracting the exposed insulator, and as shown in FIG. 1, the P-type layer 4 and the reflective layer P5 of the window portion of the nP-type ohmic electrode P2 are preferably: The protective film P4 is completely separated. In addition to Si02, the material of the protective film composed of the enamel plate can be exemplified by 317713 20 1282635, which is all Q2 TlC>2 and the like. That is, as the protective film, an insulating bismuth compound/nitride or metal oxynitride is suitable, except for the case of the above-mentioned philosophical conditions, Al2〇3, A1N, Zr()2 and the like. It is also possible to laminate the protective film composed of Js, , , , ·, 邑, and 彖 limbs by light absorption, when the inside of the protective film is used, or when the interface between the p-type layer and the protective pancreas is reflected. The loss suffered is set to be smaller. The film thickness of the film is particularly limited in order to achieve the object of the present invention. However, in order to make it preferable, the film of the hot pinhole is made of 〇9, and &amp; More preferably m or more, and more preferably 0.3 // m or more.

The film thickness of the right-hand protective film was 3 mesh, and the patterning was carried out by a peeling method of 曰L. The following 'there is a simple use of the layer 2 can not be said that the thermal conductivity of the insulator is good, so the reverse layer, the bonding layer, or the formation of the bonding on the reflective layer to two: : and :: substrate installation The film thickness of the wide protective film is better than that of the temple, and it is better by 0.3//m or less. a Improvement effect of heat dissipation of components obtained by the coating method Fig. 6 is a view of the present invention - each figure. In the cross-sectional view of the LED of the sixth embodiment, the protective film P4 is covered by η. The end face of the light-emitting layer 3 which is exposed by the surname is extended and the shape is extended, and the film is also used as the end face protective film of the light-emitting layer 3. The ΐΓ type 形成 is preferably formed of a material having a higher reflectance than a wavelength of light generated in the luminescent layer. Preferred reflective layer: Reflective material 317713 21 1282635 A1, Rh, Pt, etc. in the visible wavelength range to the near ultraviolet region, especially Platinum elements other than Ag, ab Rh, Pt (Ir, Pd, Ru, Os) is also suitable for use. The reflective layer may be formed of at least a metal having a high reflectance of the above-mentioned element: a portion that is reflected by the light-emitting layer by being disposed in a window portion of the p-type ohmic electrode. For example, in the element shown in Fig. 1, only the portion of the reflective layer is formed in eight turns. It is also possible to form the reflective layer only with a metal having a high reflectance of the above elements.

When Ag is used for the anode, there is a problem that electrochemical migration is liable to occur. Therefore, directly forming a reflective layer composed of eight layers on the p-type ohmic electrode may cause deterioration of the p-type ohmic electrode or LED. The cause of the deterioration. Since A1 has a linear expansion ratio of about 4 times the linear expansion coefficient of a GaN-based semiconductor, it is a conventional technique, and if a reflective layer composed of A丨 is directly formed on a layer, thermal stress due to a difference in thermal expansion rate is caused. The deformation is easy to occur. If the deformation wave and the p-type ohmic electrode, the contact state of the rm electrode and the p-type layer is deteriorated, and the ohmic electrode is connected to the ohmic electrode. And &quot;^ΑΙ(4) is lower, so it is easy to kapple during heat treatment of the electrode, and it is easy to cause the stress caused by the above-mentioned thermal stress. The interface between the p-type ohmic electrode and the p-type layer is The contact resistance rises. Moreover, AI has a property of forming an intermetallic compound with a metal as a material of p-type human =. The formation of a reflective layer composed of A1 on the p-type ohmic electrode is a cause of deterioration of the P-type ohmic electrode. Therefore, the present invention (4) is effective as 2 3177J3 22 Ϊ 282635 especially in the case where a protective film is interposed between the p-type ohmic electrode composed of Ag 4 A1 and the reflective layer. When the reflective layer is formed of Ag or AI, it is preferable to use a monomer in terms of reflectance, but the reflectance in the wavelength of light generated in the light-emitting layer is not remarkable in order to improve heat resistance or weatherabiliiy. An alloy in which other elements are added can also be used in the range of the ground reduction (for example, not in the range of 8% or less of the monomer). Such an alloy is developed as wiring for various semiconductor light-emitting devices or liquid crystal display devices. A highly reflective Ag alloy or an A1 alloy can be suitably used. A preferred alloy of the bismuth can be exemplified by the addition of an alloy of butyl i, Si, Nd, Cu or the like. A method of forming a reflective layer composed of an alloy of Ag*A1 can be made in addition to a person: ore, etc., and the surface of the element to be added (four) = the surface of the protective film is laminated thereon... : In the element of the P P1, when viewed from the upper side, the n-type ohmic electric IW side bonding electrode Ρ3 is formed into a square shape, and is formed along each side of the square Γ:=Γ, but the n-type The ohmic electrode - : two ::) shape or configuration is not limited to this. For example, the elements of the electrodes 7 of Fig. 7 (a) are square--::): the elements may be circular, and the elements may be arranged diagonally. Figure 7 (8) The surname layer is exposed on the surface of the exposed layer, and the reference day in the element structure of the n-type ohmic electrode forming the n-type ohmic electrode is the reference day = the m electrode, and the side electrode is the (4) H country special opening 200 (Μ64930) No. 317713 23 1282635, In addition, a transparent conductive substrate such as a SiC substrate, a ZnO substrate, or a QaN substrate can be used for the crystal substrate, but the n-side ohmic electrode can be formed on the lower surface of the crystal substrate at this time. For the ohmic electrode, a conventional electrode can be suitably used for the electrode having a low contact resistance of the n-type GaN-based semiconductor. Such an electrode may, for example, be a part in contact with the n-type layer, such as a Ti, Cr, w or the like. An electrode composed of an alloy. • A preferred type 11 ohmic electrode may be a portion in contact with the n-type layer composed of A1, but the type 11 ohmic electrode may be formed in the same publication structure as the reflective layer. The time can simultaneously form the number of n-type ohmic electrodes and the number of reverse processes. If the layer thickness of the All ohmic electrode is 2 〇〇 or more, the electrode can be combined, but the n-type ohmic electrode side is required as needed. Bonding electrodes are also available In addition, 屯 is a sectional view of Fig. 8 (4) shows the ^ 8 ® towel of the coffee (four) example shown in Fig. 1, s is the substrate for mounting 'for example, opening the surface of the substrate S1 by A And a pattern formed by Au is formed on the clothing surface. The GaN-based lED is made of S2 S3, and the reflective layer P5 is directed to the wire (for the wire electrode S2). The n-type ohmic electrode Ρ1 is bonded to connect the 接合-side bonding electrode Ρ3 to 遒# + to bond the reflective layer Ρ5 to the guiding junction + 托u connection. The 泠 泠 wire electrode S3, : Γ ? material C is, for example, AU-SnW fresh : 2: h is placed on the resin binder (binder) conductive: paste 317713 24 1282635 (conductive paste). In the example shown in the figure 8 of the brother, in order to make the function of the coffee, the installation base The wire electrode of the material § is not used, but for the sake of convenience, it is called the wire electrode reflection layer Ρ5 and the security system in order to make the heat generated in the LED. A preferred bonding material. The material of 屯5 is solder-like, and is itself composed of a metal material, or like a conductive paste, with a +, Moreover, the thermal conductivity is good, and the microparticles of the sheep are in the present invention, and in the present invention, the outermost surface of the reflective layer p5 in Fig. 8 will be used for bonding with the bonding material. The layer is referred to in Fig. 8. The bonding layer P5 is bonded to the wire electrode § 4: the heat generated in the LED is dissipated to the substrate S. For this purpose, the conductive δ material C is preferably solder. In the example of the eighth embodiment, when the bonding layer and the mounting substrate are joined by the conductive bonding material with the outermost layer a layer ' of the reflective layer ρ5, the heat generated in the light-emitting layer during the operation of the LED is effective. Since the ground is conducted to the substrate for ampoules, the temperature rise of the element is suppressed. Thus, the efficiency (4) is low or the wavelength is varied&apos; and the lifetime or reliability of the component is improved; The seeding effect is obtained by forming a metal bonding layer on the reflective layer to conduct electricity, and bonding the bonding material to the bonding layer and the mounting substrate. In the example of Fig. 8, when the solder is used as the conductive bonding material, the outermost layer (= bonding layer) of the reflective layer P5 is formed of Au, and the wetting of the crucible and the cherries is improved by 317713 25 1282635. Au is difficult to be oxidized, so it has good wettability from various fresh materials. If the surface of the _^ and 2 surface shows good wettability, the joint is: = facing the joint interface of various solder joints, so the heat of the interface; = the presence or absence of the gap is most often used by the user Eutectic solder, eutectic solder suspension using Sn (tin). When the joint (4) is formed of an S4Sn alloy (including a Sn alloy having the same composition as that of the used: Li: crystal solder), when eutectic solder having a composition of Sn is used, it can be joined immediately. j tightly bonding the bonding layer and the eutectic solder into the eight: and ' Au-Si alloy, Au_Ge alloy, Au_Sn alloy, Au_Sb &amp; Meng alloy Au alloy (four) (four) due to good electrical conductivity and thermal conductivity, and chemically Stable, it is often used for the access of semiconductor parts. When a bonding layer is formed by using an alloy such as a tin alloy (including an alloy of a tin alloy), when the Au alloy solder is used, the bonding layer and the Au alloy solder can be tightly bonded. . &gt; Bonding Zhan and wire electrodes can also be eutectic bonded. In the eutectic bonding, for example, by using the bonding layer as Δ „ s . ^ . ° 筏. The layer is used as the Au layer, and Sn| is formed on the surface of the wire electrode in advance, and in the state where the layers are brought into contact, The application of energy in the form of heat and vibration is such that Au-like eutectic alloy is produced at the contact portion and joined. The eutectic bonding is also a bonding using a metal material, so that the heat dissipation of the element is improved. ^, When welding, the reflective layer P5 is exposed to high temperature, but the alloying reaction between the layer A and the core contained in the reflective layer P5 due to the heat at this time is between the layers. It is preferable to design a barrier layer composed of a metal material such as high 317713 26 1282635. If the reaction between Au and Ai is generated, in addition to the decrease in the reflectivity of the A1 layer, an alloy layer of poor strength is formed or formed. There is a void, so the life or reliability of the component will be reduced. This kind of reaction can also be carried out slowly at the low temperature of the component's use temperature or the component's use temperature, but by the barrier layer. Can also suppress the life of components The reliability is lowered. The A layer is used instead of the A layer, and the Au layer is used instead of the Au layer. • The barrier layer is composed of two layers of metal to be separated by the barrier layer. It has a higher melting point formed by a metal higher than the bright point. The preferred material of the barrier layer is w, Mo, Ta, Nb, v, &amp; so-called high melting point metal, platinum element The monomer of Ti, the state, etc. is a composite film. The barrier layer is a layer formed by laminating a plurality of layers of such materials. The multilayer film of the parent layer pt layer and the Au layer is more suitable as a wall layer. According to the configuration of the reflective layer P5, between the A1 (alloy) layer and the (alloy) layer, between the Ag (alloy) layer and the Au (alloy) layer, and between the (alloy) layer and the (ortho) layer For the same reason, it is preferable to interpose the barrier layer. , shot layer P5 and p-type ohmic electrode? (2) In order to prevent the destruction of the film P4 due to static electricity or the like, or the deterioration of the LED accompanying the destruction, it may be electrically short-circuited. This short circuit can also be performed by short-circuiting the mounting electrode S3 and the wire electrode S4. The figure is a cross-sectional view of (4) (4) of an embodiment of the present invention. In the 'five pieces', a short circuit occurs in the P-type ohmic electrode P2 and the reflective layer Ρ5 in the element. Specifically, the side joint electrode Ρ3 is extended to 317713 27 1282635

It is formed on the surface of the reflective layer P5. This G is used as a bonding layer for the reflective layer of the p-side bonding electrode P3 which is formed by the vertical 曰, and the layer is used as a bonding layer, and the heat dissipation property is excellent. In the element shown in Fig. / Fig. 3, when the p-type ohmic electrode P2 is inverted = 5, the reflective layer P5 is not separated by the protective film p; The structure of the portion on the ohmic electrode P2 is particularly good when the reflective layer contains A*ma+^, which is called k ohm. The reason is that if the P type A! t is not separated from the protective film and the A1 layer or the Ag35 is not provided, diffusion of Ag or Ag occurs, and the material of the p-type ohmic electrode is ::: type: m electrode. The interface of the layer. This point is also due to the fact that the active layer of the heat-generating part of the second layer is separated from the thin p-type layer. In particular, in order to suppress the formation of an alloy having a poor property in the case of the ρ type containing Au, and to form the A1 layer, it is necessary to provide a protective film. "seat

Fig. 10 is a view showing the GaN-based LE of the embodiment of the present invention: in the element of the image: t-type 0, the short-circuit occurs in the element n-type ohmic electrode P1 and the length-to-i. Specifically, the 'n-type ohmic electrode P1 is formed on the surface of the field and b 5 . This GaN-based LED is used as a bonding layer by forming a layer of a layered n-type ohmic electrode p formed on the reflective layer P5, and is excellent in heat dissipation. In particular, when Ag is used in the reflective layer, the potential of the reflective layer may cause electrochemical migration. Therefore, it is preferable to prevent the reflection layer from being short-circuited to the electrode for supplying the n-type GaN-germanium semiconductor as shown in the figure H). 3177J3 28 Ϊ 282635 ^ G 明 635 635 635 635 635 Ϊ Ϊ Ϊ Ϊ Ϊ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The P-type layer 4 is formed by growing an n-type layer 2, a light-emitting layer 3, a B-shaped P-type ohmic electrode P2, a protective film P4, and a reflective layer-type ohmic "4^® ° reflective layer P5" on the crystal substrate 1. It is electrically connected to the PI £ merma P2 in the peripheral portion of the element. 2 can also be used in the connection portion of the P-type ohmic electrode P2 and the reflective layer P5 = the alloying reaction between the metal materials constituting each of the reflective layers p5 as a multilayer structure, with ai or g / The lower layer 'is formed of Au (alloy) and Sn (alloy) to form the uppermost layer, and the present 'between a barrier layer interposed therebetween'. The lowermost layer is formed only on the protective film. 4 The extreme barrier layer and the uppermost layer are at least extended? The ohmic electrode P2 may be formed on the exit portion. 2 η (8) is shown in the reflective layer? 5 is a portion where the substrate B is held via the conductive bonding material. The conductive bonding material c is, for example, material or electrically poor. The substrate B may be a conductive substrate, and examples thereof include a Si substrate, a GaAs substrate, a GaP substrate, a team substrate, a (four) substrate, an additive substrate, and various metal substrates. Further, instead of using the conductive bonding material C to bond the holding substrate B, by depositing a thick film composed of a metal such as Ni by the electric money using the reflective layer p5 as an electrode, the composition can be regarded as a guarantee. Used as a substrate. In order to bond the reflective layer P5 and the conductive substrate with Au-based or Sn-based solder or by eutectic bonding, it is preferable to use Au (alloy) or the uppermost layer of the reflective layer P5. σ ] 317713 29 1282635 * Fig. 11 (c) ^ # The crystal substrate 1 is removed, and a portion of the n-type layer 2 is formed on the surface of the exposed n-type layer 2. The removal of the crystal substrate t can be performed by grinding or polishing to remove all or most of the crystal substrate 1 by thinning or by using a laser lift-off technique (Iaser with off) to peel off the interface between the crystal substrate-L and the n-type layer 2. The type 1 ohmic electrode ρι can also be formed on the exposed surface of the n-type layer exposed by the button from the lower side of the n-type layer. . • In another preferred embodiment of the present invention, LEPS (Lateral Epitaxy 〇na patt_d ubStrate: Transverse Insect Day) is disclosed in the method of growing a semiconductor crystal disclosed in the European Patent Application, published on the Japanese Patent Publication No. 200897. The (10)-based semiconductor layer = growth is performed on the pattern substrate. The electrode film portion of the p-type ohmic electrode is selectively formed on a region where the through-difference density formed on the surface of the p-type layer is relatively low. Thereby, the luminous efficiency (internal quantum efficiency) in the light-emitting layer can be improved. • In the case of Le = LEPS, the surface of the 'C-plane sapphire substrate is formed by the sapphire in 2 directions.> The direction is (the growth is in the substrate: (10) is the semiconductor crystal (4) · (10)> direction) The strip-shaped recess main body has 'formed a strip-shaped concave-convex pattern on the surface, and the GaN-based conductor is crystallized and grown thereon. Then, the crystal of the transverse direction of the surface of the convex portion is grown, and the crystal layer of the surface obtained by the growth of each convex portion is obtained. When the crystal layer is used as a base layer, the n-type layer, the light-emitting layer, and the p-type layer are sequentially grown on the base layer. When the ED wafer is used, a penetration difference occurs on the surface of the p-type layer. The strips have a low density strip of strips. This is a region above the concave portion 317713 30 1282635 formed on the surface of the sapphire substrate, that is, a region above the portion where the base layer is formed by the lateral portion of the sapphire substrate. The density of =: can be! Left or right or i 〇 7cm_2 to:? The tooth row A X has a lower value below 1 U Cm. - on the surface of the P-type layer, for example, a =-pattern having the shape shown in Fig. 4 (4) and an ohmic electrode 俾 can be disposed, and each of the portions corresponding to the teeth of the comb is wide: A strip-shaped region having a low density or a region above the recess of the sapphire substrate. Therefore, the majority of the current supplied to the light-emitting layer by the type ohmic electrode can be made to pass through the region where the difference in density is low, so that the carrier of the light-emitting layer (a-), the light of the light The probability of combination becomes high, and the luminous efficiency is improved. —. The illuminating wavelength is purple in the luminescent layer composed of the low In composition X (including the case of (4)) (about 42 〇 body = significant, the reason is that the reading is carried out in the luminescent layer by _, and In the embodiment of S8, it is preferable to use a P-type ohmic electrode. The area of the knife is 60% or more, preferably 70% or more, and more preferably. Γ Γ Γ 以上 以上 形成 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上 以上The concave-convex pattern is not limited to a strip shape. The iL case is a pattern in which the boundary line between the concave portion and the convex portion is grown in the &lt;;1-1〇〇&gt; direction of the GaN-based semiconductor crystal. In other words, the convex portion forms an island-like pattern. Further, even if the boundary line 317713 31 1282635 is in the direction of (10), II can increase the lateral growth of the GaN-based semiconductor crystal by the first-incorporation. At this speed, a region having a low penetration density can be formed above the concave portion of the substrate. In the yoke shape, the crystal grown in the lateral direction of the convex portion of the substrate merges with the crystal grown from the adjacent convex portion before being connected to the crystal grown in the concave portion, and as a result, there is a substrate on the substrate. A gap remains between the concave portion and the GaN-based semiconductor crystal layer grown on the substrate. This type of void is filled with a gas material having a low refractive index inside, so that it is easy to reflect light that is reached by the light-emitting layer, and it is difficult to The lower side of the substrate leads out light generated in the light-emitting layer. This problem is the embodiment shown in Fig. u, and the new holding substrate can be bonded to the reflective layer to remove the surface plate used for LEPS (depression on the surface) Solution to the substrate of the pattern. Soil &lt;Examples&gt; [First Embodiment] An GaN-based LED having a cross-sectional structure not shown in Fig. a was produced and evaluated according to the following procedure. LED wafer fabrication), ... the main surface of the sapphire substrate is periodically formed with a ir-like pattern of the photoresist (mask handsome (10)). The strip-shaped period (width of the mask + adjacent) The base between the masks is again 3 := ) is 6... The strip direction is set to sapphire:: 〇 &amp; Ν W mountain direction). A trench having a depth of _ is processed on the surface of the exposed sapphire substrate by reactive ion etching from the mask. Then, 317713 32 1282635, by removing the photoresist, a superficial stone substrate 1 having a stripe-like uneven pattern formed on the surface is obtained. Further, in the sapphire-processed substrate having the stripe direction, the growth of the GaN-based semiconductor crystal in the lateral direction is suppressed, and the concave portion on the surface of the substrate is easily buried.

Next, the n-type layer 2, the light-emitting layer 3, and the p-type layer 4 are sequentially grown on the sapphire-processed substrate by using the MOVPE method, and then annealed by using an RTA (Rapid Thermal Annealing) device. An lED wafer having a GaN-based semiconductor stacked body having an LED structure was obtained. The n-type layer 2 is a two-layer structure of an undoped GaN layer and a Si-doped GaN layer, and is embedded in the surface of the sapphire-processed substrate 1 with an undoped GaN layer. The Si-doped GaN layer is grown. Further, the light-emitting layer 3 is formed by alternately laminating an MQGaN structure in which an InGaN well layer having an In composition and an InGaN barrier layer having a larger energy gap than the well layer are adjusted so that an emission wavelength becomes 400 nm. Further, the p-type layer 4 is formed into a two-layer structure composed of an AlGaN cladding layer of Mg and a Mg-doped GaN contact layer laminated on the cladding layer. (Formation of Electrode or the Like) A family thickness of H) 〇nm Au and a film thickness of 2 〇nm Ti are formed. The p-type ohmic electrode P2_ is formed by performing a lithography method using a usual lithography method to perform 5 Å on the patterned p-type ohmic electrode P2. Next, the second P-type ohmic electrode P2 is formed on the surface of the P-type layer 4 in a lattice-like pattern having a square-shaped window portion. The area ratio of the window portion occupied by the lattice pattern is set to be about 7 G%. The Xiao p-type ohmic electrode p2 is laminated by the side contacting the P-type layer 4 using a tomb method: film thickness ΜΙ 317713 33 !282635 heat treatment.

Next, in order to partially expose the n-type acoustic layer, the reactive ionic etching method is used to form a doped Si which is formed by the GaN 'excluding P-type layer 4 and the upper side of the portion S 4 of the light-emitting layer 3. GaN layer: ': by using this, forming _ ohmic electrode P1 for 50 (TC, 1 minute heat treatment., 'n-type ohmic second, using plasma CVD method to form protective film P4 by s· The film thickness of the 俾-covered wafer is 3〇〇_ etched to partially remove the opening of the protective film P4; the stalker's straw is exposed by the upper portion of the dry residual P1 and the _ portion of the P-type ohmic electrode 2 Next, the ohmic electrode is formed by a vapor deposition method on the reflective layer P5 having a thickness of 200 Å of the protective film P4, and a film composed of the film is formed on the P4. Next, a P-side human P3 system is formed by vapor deposition: the lowermost layer is °. The side of the junction I ^ _ von Fenggu Valley I 〇 nm Ti, swallowing a crystal in i a two layers of film thickness 80nm Pt 盥 film strict,, &quot;

Au . ^ ^ ” membrane; 8〇11111 Au, so that the top layer is

A layer of Au layer. The D-draw electrode P3 which is the opening portion of the film P4 is brought into contact with the p-type ohmic electric power P4 ^ h hh 露出 which is exposed to the protective -WU port p and the reflective layer P5 which is formed on the protective film 4 Formed as a whole. (10) The same stack of electrodes P3 forming the P-side bonding electrode P3; the structure 1 &quot; $ has a side-joining electrode P6 bonded to the P-side, and is formed at the opening of the Xiawei protective film P4. Type ohmic electrode P]. "Second" grinding the sapphire processing substrate _ heart, and then _ " 囟 囟 囟 囟 厗 厗 厗 厗 , , , , , , , LED LED LED LED LED LED LED LED Sundial 317713 34 !282635 The size of the piece is 3 5 Ο // m square. (Evaluation) The following are: Γ 2: two sheets, bare chips are fixed on the surface side of the junction: the two sides are respectively made by Au_Sn solder. Fresh layer. The surface of the portion formed on 5 is used for measuring the forward direction of the mounted LED chip by a thick electric current MM. In the input (four) measurement system, the integrating sphere is used. As a result, (10) 3·8ν, the vehicle is l〇e7mw. [Second Embodiment] An LED wafer was produced and evaluated in the same manner as in the first embodiment except that Rh contained in the P-type ohmic electrode P2 was replaced by a crucible. As a result, Vf was 3.4 V, and the output was 97 mw [First Comparative Example] An example of a conventional technique is to fabricate a GaN non-LED having a cross-sectional structure k shown in Fig. 13 (4). The GaN-based LED-based p-type ohmic electrode is not formed with a window portion. The pattern ' does not have a reflective layer composed of the same. The fabrication of the led wafer is performed in the same manner as in the first embodiment. P; f' is completely completed on the surface of the obtained p-type i 4 Without the pattern of the window 317713 35 1282635 (that is, the flat shape), the basin -

Lg. ^p. , /, P-type ohmic electrode, which has been consistently applied by other people, similarly forms a P-type ohmic electrode (1). Secondly, the formation of the n-type ohmic electrode P11 is called, and the accompanying (10) P1p tm is the same as that of the first embodiment... the entire wafer is formed on the wafer, and the part is removed by the dry remnant. The opening of the film P14 and the upper surface of the n-type ohmic electrode P11 and the upper surface of the P-type ohmic electrode P12 are exposed. Then, on each of the n-type ohmic electrode exposed to the opening portion and the second-type ohmic electrode P12, an n-side bonding electrode pi6 having the same laminated structure as that of the first embodiment is formed simultaneously. The p side is bonded to the electrode P13. Then, in the same manner as in the first embodiment, the L E D wafer was cut out from the wafer and fixed on the substrate for mounting, and evaluated. As a result, Vf was 3.8 V and the output was 9.5 mW. When the elements of the first embodiment and the elements of the first comparative example are compared, the p-type ohmic electrode is made equivalent by using the same laminated structure of Rh and Au. On the other hand, the element of the first embodiment is such that at least a portion of the light generated in the light-emitting layer is reflected on the substrate side by the reflective layer 'composed of A! with a reflectance higher than the wavelength of 400 nm. Here, since the element of the first comparative example does not have a reflection structure using the reflective layer, the output of the element of the first embodiment is higher than that of the element of the first comparative example. Moreover, if the element of the second embodiment is compared with the element of the first comparative example, the element of the second embodiment, although using a P d 36 317713 1282635 having a reflectance lower than that of Rh, is output to the p-type ohmic electrode. A component of a comparative example. Further, since the element of the second embodiment is lower in Vf than the element of the first comparative example, the light emission ratio is better than that of the first comparative example. - [Second Comparative Example] An example of a conventional technique was produced by fabricating a cross-sectional structure k = GaN-based LED shown in Fig. 13 (3). In the GaN-based LED, a protective film composed of an insulator is not interposed between the p-type ohmic electrode and the reflective layer composed of A!. The production of the LED wafer was carried out in the same manner as in the first embodiment. The p-type ohmic electrode P12 is formed on the surface of the round p-type layer 4 obtained in jin in the same manner as in the first embodiment. A reflective layer P15 having a film thickness of 200 nm composed of A1 is formed, and 俾 directly covers the p-type ohmic electrode p12. Next, the formation of the n-type ohmic electrode pn ^ m u PU and the formation of the protective film P14 in the same manner as in the first embodiment are performed in the same manner as in the first embodiment. n mouth neighbor, broadcast hunting? The etching is performed to partially remove the protective film P14: the following: the upper surface of the electrode P11 and the upper surface of the reflective layer P15 are connected, and the n-type Ou + the layer P15 of the opening portion of the path is One of the above, at the same time, it is called the same laminated structure as the reverse. Side bonding electrode P16 and P side bonding electrode

曰B 5 ^ The method of cleverly, the sheet ' is fixed on the mounting substrate, and as a result, VfA4^±λ 1 is 4.5V, and the output is 7 5mW. 317713 37 1282635, [Industrial availability] Layer generated: in the light-emitting diodes 'Because of the luminescence • Between the 绫-type ohmic electrode and the reflective layer, the ρ-type ohm:: protection Since the film is formed, the rise in the contact resistance of the C is caused by the diffusion of the material of the reflective layer. Moreover, the decrease in the reflectance of the reflective layer caused by the p-type metal: τ is also suppressed from being separated from the reflective film by a protective film composed of an insulator. Type ohmic power ► ::, 茈: 'It is best to make each of the two types of ohmic electrodes and the reflective layer not accompanied by a reduction in conversion efficiency, the light extraction efficiency of the layer, and the luminous efficiency of New Zealand. . In the GaN-based light-emitting diode of the embodiment of the present invention, since the fire 'electrode is formed into a pattern having a window portion, the loss due to absorption of the ohmic electrode in the light-emitting layer generation rate is changed. Small, and light-extracting effect The (10)-based light-emitting diode of the embodiment of the present invention preferably uses an anti-sounding layer, a surface layer as a bonding layer, or a bonding layer on the reflective layer = bonding the bonding layer with a conductive bonding material It is produced with the substrate for mounting. When the device is mounted, the light-emitting layer L can be efficiently conducted to the mounting substrate during the operation of the device, so that the temperature of the device is reduced, or the wavelength variation is suppressed, and the component is changed. Life or reliability. This application π case ir, based on the Japanese Patent Application No. 2005-03^55, Special 2005-284375 and Special Pulse 3ΐ 778 ι, are included in this specification. 317713 38 1282635, BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a GaN-based light-emitting diode according to an embodiment of the present invention, and Fig. 1 (4) is a top view, pp! Figure (8) is the first! A cross-sectional view of the χγ line ' of Fig. 4). Fig. 2(a) to Fig. 2(c) are diagrams showing the process of the GaN-based light-emitting diode shown in Fig. 1. Fig. 3 (d) to (f) are process diagrams for explaining a GaN-based light-emitting diode body shown in Fig. j. Fig. 4 (a) to (f) are diagrams illustrating a pattern of a p-type ohmic electrode (a pattern having a window portion). Fig. 5 is a cross-sectional view showing a GaN-based light-emitting diode according to an embodiment of the present invention. Fig. 6 is a cross-sectional view showing a GaN-based light-emitting diode according to an embodiment of the present invention. Fig. 7 (phantom and illusion) shows a top view of a GaN-based light-emitting diode according to an embodiment of the present invention. Fig. 8 is a cross-sectional view showing an example of the GaN-based light-emitting diode shown in Fig. 1. Fig. 9 is a cross-sectional view showing a GaN-based light-emitting diode according to an embodiment of the present invention. Fig. 10 is a cross-sectional view showing a GaN-based light-emitting diode according to an embodiment of the present invention. Fig. 11 (a) and (c) are process drawings for explaining a GaN-based light-emitting diode according to an embodiment of the present invention. 317713 39 1282635 Fig. 12 is a cross-sectional view showing a GaN-based light emitting diode according to an embodiment of the present invention. Figs. 13(a) and (b) are cross-sectional views showing a GaN-based light-emitting diode 2 of a conventional technique. [Main component symbol description]

Crystalline substrate, sapphire 2 n-type layer-type layer U-type bonding material Ρ2, pi 9 » 12 P-type ohmic electrode, P14 protective film ^'Pl6 n-side bonding electrode 1 to wire electrode force π substrate 3 luminescent layer 保持Substrate Ρ1, Ρ11 η-type ohmic electrode Ρ3, Ρ13 ρ-side bonding electrode Ρ5, Ρ15 reflective layer S mounting substrate

317713 40

Claims (1)

1282635 w - X. Patent application scope: 1 . A GaN-based light-emitting diode comprising: an n-type GaN-based semiconductor layer; and a light-emitting layer formed on the n-type GaN-based semiconductor layer by a GaN-based semiconductor a P-type GaN-based semiconductor layer formed on the light-emitting layer; a P-type ohmic electrode having a pattern on a surface of the p-type GaN-based semiconductor layer; a metal reflective layer and the p-type a GaN-based semiconductor layer is formed in such a manner that the P-type ohmic electrode is formed, and light that is incident by the light-emitting layer is reflected by the window portion; and a protective film is interposed between the reflective layer and the P-type ohmic electrode And composed of insulators. 2. The GaN-based light-emitting diode according to claim 1, wherein the outermost layer of the far-reflecting layer is a bonding layer, or a metal bonding layer is further formed on the reflective layer. 3. The GaN-based light-emitting diode according to claim 2, wherein the bonding layer is a layer composed of Au, an Au alloy, a Sn or a Sn alloy. 4. The GaN-based light-emitting diode of claim 3, wherein the reflective layer of at least the portion of the light that is incident by the light-emitting layer is made of Ag, an Ag alloy, an A1 alloy, or a platinum group element. Formed. 5. The GaN-based light-emitting diode according to claim 3, wherein the reflective layer of at least a portion of the light that is reflected by the light-emitting layer is formed of Ag, an Ag alloy, an A1 or an Al alloy, and In 317713 41 1282635, a barrier layer is interposed between the portion and the bonding layer. 6. The GaN-based light-emitting diode according to claim 2, wherein the protective film has a film thickness of from 〇.l/zm to 1 //m. 7. The GaN-based light-emitting diode of claim 1, wherein the protective film has a lower refractive index than the P-type GaN-based semiconductor layer 〇8β, as claimed in claim 1 a GaN-based light-emitting diode, wherein the reflective layer of at least a portion of the light that is reflected by the light-emitting layer is formed of Ag, an Ag alloy, an A1 or Al alloy, and the P-type ohmic electrode contains Au. P-type ohmic electrode. The GaN-based light-emitting diode according to the first aspect of the invention, wherein the P-type ohmic electrode includes a portion composed of N1, Ti or Cr at a portion in contact with the protective film. 1〇f declares a GaN-based light-emitting diode of the patent dry bank, wherein the p-type ohmic electrode has a film thickness of 6 〇 nm to. The GaN-based hairpin of the ninth patent of the patent scope is claimed. The film thickness of the (four) ohmic electrode is 100_ or more. , in the 12.2 patent range of the first item _ series of light-emitting diodes, wherein the 8 〇 0 / 1 self-pattern of the window portion of the area ratio of 60 to the factory and 'the luminescent layer is illuminated The wavelength 42〇_ is composed of the case where the WWW contains (4). The second garment is a GaN-based luminescent material according to item 2 of the patent application scope: two layers: the bonding layer is fixed to the mounting surface, the bonding layer, the bonding layer, and the mounting substrate are electrically conductive 317713 42 1282635 Bonding material bonding. L4t applies for the illuminating device of item 13 of the range 15.= The joint made by the bucket is formed by welding: '. The illuminating device of the ninth aspect of the invention, wherein the bonding by the electrical bonding material is formed by eutectic bonding. 317713 43