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TWI282377B - Etchant, replenishment solution and method for producing copper wiring using the same - Google Patents

Etchant, replenishment solution and method for producing copper wiring using the same Download PDF

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Publication number
TWI282377B
TWI282377B TW093121488A TW93121488A TWI282377B TW I282377 B TWI282377 B TW I282377B TW 093121488 A TW093121488 A TW 093121488A TW 93121488 A TW93121488 A TW 93121488A TW I282377 B TWI282377 B TW I282377B
Authority
TW
Taiwan
Prior art keywords
copper
etchant
liter
etching
same
Prior art date
Application number
TW093121488A
Other languages
Chinese (zh)
Other versions
TW200504245A (en
Inventor
Kenji Toda
Yukari Morinaga
Takahiro Teshima
Ai Kuroda
Original Assignee
Mec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mec Co Ltd filed Critical Mec Co Ltd
Publication of TW200504245A publication Critical patent/TW200504245A/en
Application granted granted Critical
Publication of TWI282377B publication Critical patent/TWI282377B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
    • H05K2203/124—Heterocyclic organic compounds, e.g. azole, furan

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

An etchant for copper and copper alloys, includes an aqueous solution containing: 14 to 155 g/liter of cupric ion source in terms of a concentration of copper ions; 7 to 180 g/liter of hydrochloric acid; and 0.1 to 50 g/liter of azoic, the azole including nitrogen atoms only as heteroatoms residing in a ring. A method for producing a wiring by etching of copper or copper alloys, includes the step of: etching a portion (2a) of a copper layer (2) on an electrical insulative member (1) that is not covered with an etching resist (3) using the above-described etchant so as to form the wiring (4). Thereby, a fine and dense wiring pattern with reduced undercut can be formed.
TW093121488A 2003-07-25 2004-07-19 Etchant, replenishment solution and method for producing copper wiring using the same TWI282377B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003280118 2003-07-25
JP2004124375 2004-04-20

Publications (2)

Publication Number Publication Date
TW200504245A TW200504245A (en) 2005-02-01
TWI282377B true TWI282377B (en) 2007-06-11

Family

ID=33492510

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093121488A TWI282377B (en) 2003-07-25 2004-07-19 Etchant, replenishment solution and method for producing copper wiring using the same

Country Status (7)

Country Link
US (1) US7431861B2 (en)
EP (2) EP2226410A1 (en)
KR (2) KR20050012682A (en)
CN (1) CN100459068C (en)
DE (1) DE602004030861D1 (en)
SG (1) SG108989A1 (en)
TW (1) TWI282377B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI422711B (en) * 2007-09-04 2014-01-11 Mec Co Ltd Etching solution and conductor pattern formation method

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WO2005086551A1 (en) * 2004-03-03 2005-09-15 Ibiden Co., Ltd. Etching solution, method of etching and printed wiring board
KR101199533B1 (en) 2005-06-22 2012-11-09 삼성디스플레이 주식회사 Echant and method for fabricating interconnection line and method for fabricating thin film transistor substrate using the same
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7674755B2 (en) * 2005-12-22 2010-03-09 Air Products And Chemicals, Inc. Formulation for removal of photoresist, etch residue and BARC
KR20070088245A (en) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 Polishing liquid for metal
KR101001875B1 (en) * 2006-09-30 2010-12-17 엘지이노텍 주식회사 Fine pattern formation method using isotropic etching and a semiconductor substrate surface member having a fine pattern manufactured using the same
CN100466182C (en) * 2007-01-04 2009-03-04 北京京东方光电科技有限公司 Manufacturing method of metal wire, electrode and thin film transistor array substrate
US7655608B2 (en) * 2007-08-03 2010-02-02 Dynaloy, Llc Reduced metal etch rates using stripper solutions containing a copper salt
JP5398549B2 (en) * 2008-01-15 2014-01-29 三菱製紙株式会社 Etching solution, pre-etching treatment solution and etching method for copper or copper alloy
JP4916455B2 (en) * 2008-01-15 2012-04-11 株式会社Ａｄｅｋａ Etching composition for copper-containing materials
CN101952484B (en) 2008-02-12 2014-05-07 三菱制纸株式会社 Etching method
JP4521460B2 (en) * 2008-02-20 2010-08-11 メック株式会社 Etching solution and method of forming copper wiring using the same
KR101135798B1 (en) * 2008-02-20 2012-04-16 멕크 가부시키가이샤 Etching solution, and method for forming copper wiring using the same
TWI450052B (en) * 2008-06-24 2014-08-21 黛納羅伊有限責任公司 Stripping solution for efficient post-stage process
JP5443863B2 (en) * 2009-07-09 2014-03-19 株式会社Ａｄｅｋａ Etching composition for copper-containing material and method for etching copper-containing material
JP4685180B2 (en) * 2009-07-09 2011-05-18 株式会社Adeka Etching composition for copper-containing material and method for etching copper-containing material
EP2537960B1 (en) * 2010-02-15 2015-04-01 Mitsubishi Gas Chemical Company, Inc. ETCHING SOLUTION and etching method FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN
TWI539493B (en) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 Method and composition for doping a germanium substrate having a molecular monolayer
JP5667927B2 (en) * 2011-05-20 2015-02-12 富士フイルム株式会社 Treatment liquid for forming migration suppression layer, and method for producing laminate having migration suppression layer
CN102291952B (en) * 2011-08-05 2013-04-24 奥士康精密电路（惠州）有限公司 Method for preparing multi-layer PCB (printed circuit board)
JP2013104104A (en) * 2011-11-14 2013-05-30 Mec Kk Etching solution, replenishment solution, and method for forming copper wiring
CN103255417B (en) * 2011-12-16 2016-01-20 江阴润玛电子材料股份有限公司 A kind of acid molybdenum aluminium-molybdenum etching liquid and preparation technology thereof
US8877075B2 (en) 2012-02-01 2014-11-04 Infineon Technologies Ag Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
CN104769159B (en) * 2012-12-03 2017-09-19 Mec股份有限公司 The forming method of etching solution, bulking liquor and copper wiring
JP5576525B1 (en) * 2013-03-29 2014-08-20 メルテックス株式会社 Copper etchant
US9301399B2 (en) * 2013-04-23 2016-03-29 Mitsubishi Gas Chemical Company, Inc. Method of treating wiring substrate and wiring substrate manufactured by the same
KR101318733B1 (en) * 2013-06-13 2013-10-18 주식회사 에이씨엠 Ethant composition comprising organic copper complex
TWI487811B (en) * 2013-11-27 2015-06-11 Chem Entpr Corp E Etching solution capable of effectively reducing galvanic effect
CN103952702A (en) * 2014-05-04 2014-07-30 深圳市实锐泰科技有限公司 Etching liquid and method for etching fine lines of flexible circuit board by using same
CN104278273A (en) * 2014-06-13 2015-01-14 叶涛 Circuit board low-acid high-efficiency acidic cupric chloride etching solution
JP6000420B1 (en) 2015-08-31 2016-09-28 メック株式会社 Etching solution, replenisher, and method for forming copper wiring
CN105479965B (en) * 2015-12-16 2018-12-25 东莞运城制版有限公司 Copper chloride corrosion device and corrosion method for printing roller
CN111655903B (en) * 2018-02-01 2025-11-07 三菱瓦斯化学株式会社 Aqueous solution for surface treatment, method for producing surface-treated alloy, composite and method for producing composite
CN111155091A (en) * 2020-02-13 2020-05-15 Tcl华星光电技术有限公司 Etching solution, additive and method for making metal wiring
CN114381736A (en) * 2022-01-07 2022-04-22 安捷利（番禺）电子实业有限公司 Titanium-copper alloy etching solution and etching method
KR102758097B1 (en) * 2022-03-28 2025-01-22 (주)풍원 Etching fluid, replenishing fluid, and method for forming copper wiring
CN114672807A (en) * 2022-05-26 2022-06-28 深圳市板明科技股份有限公司 Organic acid super-roughening micro-etching solution with high copper content and application thereof
CN115323377B (en) * 2022-08-31 2023-11-24 昆山市板明电子科技有限公司 Flashing liquid medicine and preparation method thereof
KR102815339B1 (en) * 2022-12-02 2025-06-04 해성디에스 주식회사 Etchant composition for copper-containing metal and etching method using the same
CN116732520B (en) * 2023-08-14 2023-11-14 昆山市板明电子科技有限公司 Long-acting side etching inhibition additive for acid etching solution, preparation method and application

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI422711B (en) * 2007-09-04 2014-01-11 Mec Co Ltd Etching solution and conductor pattern formation method

Also Published As

Publication number Publication date
US7431861B2 (en) 2008-10-07
KR20080056117A (en) 2008-06-20
KR20050012682A (en) 2005-02-02
CN100459068C (en) 2009-02-04
KR100946873B1 (en) 2010-03-09
DE602004030861D1 (en) 2011-02-17
CN1576395A (en) 2005-02-09
US20050016961A1 (en) 2005-01-27
EP1500719B1 (en) 2011-01-05
EP1500719A1 (en) 2005-01-26
SG108989A1 (en) 2005-02-28
HK1074224A1 (en) 2005-11-04
TW200504245A (en) 2005-02-01
EP2226410A1 (en) 2010-09-08

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