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TWI277191B - Method for manufacturing leadless package substrate - Google Patents

Method for manufacturing leadless package substrate Download PDF

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Publication number
TWI277191B
TWI277191B TW95107617A TW95107617A TWI277191B TW I277191 B TWI277191 B TW I277191B TW 95107617 A TW95107617 A TW 95107617A TW 95107617 A TW95107617 A TW 95107617A TW I277191 B TWI277191 B TW I277191B
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TW
Taiwan
Prior art keywords
layer
substrate
metal
gold
patent application
Prior art date
Application number
TW95107617A
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Chinese (zh)
Other versions
TW200735311A (en
Inventor
Pao-Hung Chou
Original Assignee
Phoenix Prec Technology Corp
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Priority to TW95107617A priority Critical patent/TWI277191B/en
Application granted granted Critical
Publication of TWI277191B publication Critical patent/TWI277191B/en
Publication of TW200735311A publication Critical patent/TW200735311A/en

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  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)

Abstract

A method for manufacturing a leadless package substrate is disclosed. The disclosed method applies a conductive layer of the top surface of a substrate, that of the bottom surface of a substrate, and that of the inner surface of through holes as an electrically conductive path and forms electrical pads on the top surface, and the bottom surface of the substrate individually through plating. The method is proceeded by forming patterned circuit on the top surface of a substrate; plating to form electrical pads on both the top surface, and the bottom surface of the substrate, and forming patterned circuit on the bottom substrate through lithography. The disclosed method can increase the layout area of the circuit, improving the electrical quality of the connection between the chip and the package substrate, or between the circuit board and the package substrate, simplify the manufacturing steps, and further reduce the manufacturing cost.

Description

1277191 〜 * Λ « , 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種封裝基板之製作方法,尤指一種適 用於無電鍍導線之封裝基板之製作方法。 【先前技術】 -1277191 〜 * Λ « , ninth invention, the invention relates to a method for fabricating a package substrate, and more particularly to a method for fabricating a package substrate suitable for an electroless plating. [Prior Art] -

10 1510 15

由於電子產品日趨輕量化、薄型化、小型化、多功能 化等而求,同時帶動積體電路晶片封裝技術的發展,進而 促使晶片封裝朝向多腳化、薄型化、及引腳微細化,甚至 無引腳構裝等技術。 為因應輕薄短小的趨勢以及追求封裝的高密度化,目 前球狀陣列封裝(Ball Grid Array)、晶片尺寸型封裝(cMp Scale Package)、及覆晶(Flip Chip)技術已成為封裝主流技 術。因此,對於小面積、1/0接腳提高、佈線緻密化、低雜 :、產品可靠性、甚至製作成本等需求,已成為封裝基板 製作之重要課題。 封裝基板之製作過程-般需於基板表面形成緻密的 路圖案,以作為傳輸電子訊號或電源之用。目前業界普 使用銅質導線作為電路佈線,故電路佈線的⑽接點處^ =錄/金層,其除了可防止銅導線氧化之外,以維持1/〇接】 处之電性品質’亦可提升封裝基板與晶片之間進行打金彡 性。此外,基板表面料—防焊層(W刪k) 以保濩基板表面所形成之電路圖案。 傳統封裝基板製程是先於已形成電路圓案之基板上| 20 1277191 蓋有:防焊材料後再電鍍形成鎳/金層。因此,未被防焊材 料覆蓋之區域(通常為:[/〇接點處)需藉由表面導線電路延伸 至基板周圍以形成-電流傳導路徑,方可進行1/0接點處電 鍍鎳/金之製程。 5 圖1係為習知具有電鍍導線之封裝基板之剖面示意 圖。為了於基板1表面之I/O接點12處形成鎳/金層13,則上 表面之線路層10需另佈設眾多之電鍍導線u,才可傳遞電 流至I/O接點12,以進行鎳/金層13之電鍍製程。然而,電鍍 鎳/金層13所延伸出的電鍍導線u佔據了基板丨表面的佈線 10空間,因而無法提升基板電路的佈線密度。此外,相鄰的 電艘導線彼此間的訊號干擾會造成雜訊產生的問題。 為解決上述電鍍導線所產生的缺點,已有許多研究團 隊發展出無電鍍導線之電鍍鎳/金製程。請參閱圖2a至圖2d 所示,圖2係為習知無電鍍導線封裝基板之製程示意圖,一 15 般稱為 GPP(g〇ld pattern plating)電鍍製程。 如圖2a所示,基板2之上下表面皆形成一完整之導電層 21,隨後於導電層21之表面覆蓋有一圖案化之光阻層22, 以顯露出基板2表面欲形成之電路佈線。接著,如圖沘所 示,於顯露之導電層21表面電鍍一鎳/金層23。最後,參閱 20圖2c與圖2d流程’移徐圖案化光阻層22後並進行蝕刻製 耘,藉由金屬保護層23保護其下之導電層21即可完成基板2 上下表面之圖案化線路,以形成一線路層24。 雖然此種GPP電鍍製程無須另設有電鍍導線,但是基 板2表面的線路層24乃全面性覆有一鎳/金層23。此種製程 1277191 不僅耗費過多鎳/金材料,且僅有表面的線路層24覆有鎳/ 金層23 ’該線路層24兩側仍顯露在外並未受保護,因此易 發生線路氧化或打線時晶片與基板間電性耦合不佳的情 形。再者,因材料特性相異而易於導致基板表面覆蓋之防 5焊層不易與線路表面之鎳/金材料緊密貼合等問題,將影響 產品的可靠性與其使用壽命。 另有無電鍍導線之電鍍鎳/金製程是利用基板表面與 電鍍導通孔表面之銅層以作為電流傳導路徑,而電鍍形成 基板上表面之鎳/金層。然而,於此種製程中,基板上表面 10與下表面的鎳/金層並非同時形成,其主要先電鍍形成一鎳 /金層於上表面之圖案化線路後,接著再於基板下表面形成 線路層,隨即覆蓋一防焊層,最後才利用無電電鍍形成下 基板之鎳/金層。儘管此種方式不會耗費過多的鎳/金材料, 且基板表面無須另設電鍍導線,但是繁瑣複雜的製程步驟 15不僅增加製作成本,亦延長製程時間。 因此,目前亟需一種無電鍍導線封裝基板之製作方 法,其可提升電路導線之佈線面積,且能提供晶片與封裝 基板、或封裝基板與電路板間良好的電性連接品質;此外 還可簡化電鍵鎳/金之竣程,以縮短製程時間並降低製作成 20 本。 ^ 【發明内容】 本發明係關於一種無電鍍導線封裝基板之製作方法, 其主要是利用一形成於基板上表面與下表面、&電鍍導通 1277191 孔内表面之金屬層當電流傳導路徑,以進行電鍍製程並且 同時形成電性連接墊於基板之上下表面。其中,本發明無 電鍍導線封裝基板之製作方法是先形成上表面電路,再進 行電錢形成上下表面之電性連接塾,最後利用圖案化製程 5 x蝕刻方式开》成下表面電路,即完成本發明無電鍍導線封 裝基板之製程。 ' 本發明是提供一種無電鍍導線封裝基板之製作方法, • 其包括有步驟(a)提供一具有一上表面與一下表面之基 板,且基板包含複數個貫通該基板上表面與下表面之導通 10孔;(b)形成一連續之金屬層於基板之上表面與下表面、以 及導通孔之内表面;⑷圖案化基板上表面之金屬層,以形 成上表面之線路層;⑷形成—圖案化之第—阻層於基板之 上表面與下表面,以顯I出部分上表面之金屬層與部分下 ^面之金屬層;⑷冑鑛形成-金屬保護層於上表面顯露之 15金屬層表面與下表面顯露之金屬層表面;⑴移除第一阻 • 層.,(g)形成一圖案化之第二阻層於基板之上表面與下表 面’㈨圖案化該下表面顯露之金屬層,以形成下表面之線 路層=移除第二阻層;以及⑴形成—圖案化之防焊層, 、、属鉻出上表面之金屬保護層與下表面之金屬保護層。 2〇 θ於本發明無電鍍導線封裝基板之製作方法中,第二阻 層疋完全覆蓋上表面之金屬層與金屬保護層,亦完全覆蓋 下表面之電性連接層,並且顯露出下表面之部分金屬層, 以進仃後續下表面圖案化線路製程。 藉此本發明無電鍍導線封裝基板之製作方法俾能增 1277191 片與封裝基板、 質’還可簡化製 加基板表面之電路佈線面積,且能提供晶片 戈封衣基板與電路板間良好的電性連接品質As electronic products become lighter, thinner, smaller, more versatile, etc., and at the same time, the development of integrated circuit chip packaging technology has been promoted, which has led to the wafer package being multi-legged, thinned, and miniaturized, even Technology such as leadless mounting. In order to respond to the trend of thinness and shortness and to pursue high density of packaging, current Ball Array Array, cMp Scale Package, and Flip Chip technology have become mainstream technologies for packaging. Therefore, the demand for small area, 1/0 pin improvement, wiring densification, low noise, product reliability, and even manufacturing cost has become an important issue in the manufacture of package substrates. The manufacturing process of the package substrate generally requires forming a dense road pattern on the surface of the substrate for transmitting an electronic signal or a power source. At present, the copper wire is used as the circuit wiring in the industry. Therefore, the (10) contact of the circuit wiring is ^=recording/gold layer, which can prevent the copper wire from being oxidized, in order to maintain the electrical quality of the 1/〇 connection. The metallurgical property between the package substrate and the wafer can be improved. In addition, the substrate surface material - solder resist layer (W delete k) to protect the circuit pattern formed on the surface of the substrate. The traditional package substrate process is preceded by the substrate on which the circuit has been formed. | 20 1277191 Covered with: solder resist material and then electroplated to form a nickel/gold layer. Therefore, the area not covered by the solder resist material (usually: [/〇 contact point) needs to extend to the periphery of the substrate by the surface lead circuit to form a current conduction path, so that nickel plating can be performed at the 1/0 contact point. The process of gold. 5 is a schematic cross-sectional view of a conventional package substrate having an electroplated wire. In order to form the nickel/gold layer 13 at the I/O contact 12 on the surface of the substrate 1, the circuit layer 10 on the upper surface needs to be provided with a plurality of electroplated wires u to transfer current to the I/O contact 12 for performing. Electroplating process of nickel/gold layer 13. However, the plated wire u extended by the electroplated nickel/gold layer 13 occupies the space of the wiring 10 on the surface of the substrate, and thus the wiring density of the substrate circuit cannot be improved. In addition, signal interference between adjacent electric boat wires can cause problems with noise. In order to solve the shortcomings of the above-mentioned electroplated wires, many research teams have developed electroplated nickel/gold processes for electroless wires. Referring to FIG. 2a to FIG. 2d, FIG. 2 is a schematic diagram of a process of a conventional electroless-plated wire package substrate, which is generally referred to as a GPP (g〇ld pattern plating) plating process. As shown in FIG. 2a, a complete conductive layer 21 is formed on the upper surface of the substrate 2, and then a patterned photoresist layer 22 is covered on the surface of the conductive layer 21 to expose the circuit wiring to be formed on the surface of the substrate 2. Next, as shown in Fig. ,, a nickel/gold layer 23 is electroplated on the surface of the exposed conductive layer 21. Finally, referring to FIG. 2c and FIG. 2d, after the photoresist layer 22 is patterned and etched, the conductive layer 21 under the protective layer 23 is protected by the metal protective layer 23 to complete the patterned circuit on the upper and lower surfaces of the substrate 2. To form a wiring layer 24. Although the GPP plating process does not require an additional plating wire, the wiring layer 24 on the surface of the substrate 2 is entirely covered with a nickel/gold layer 23. This process 1277111 not only consumes too much nickel/gold material, but only the surface circuit layer 24 is covered with a nickel/gold layer 23'. The sides of the circuit layer 24 are still exposed and are not protected, so that it is prone to line oxidation or wire bonding. A situation in which the electrical coupling between the wafer and the substrate is poor. Furthermore, due to the difference in material properties, it is easy to cause the surface of the substrate to be covered. The 5 solder layer is not easily adhered to the nickel/gold material on the surface of the circuit, which will affect the reliability and service life of the product. In addition, the electroplated nickel/gold process of the electroless plating wire utilizes a copper layer on the surface of the substrate and the surface of the plated via hole as a current conduction path, and is plated to form a nickel/gold layer on the upper surface of the substrate. However, in such a process, the nickel/gold layer on the upper surface 10 and the lower surface of the substrate is not formed at the same time, and is mainly formed by first plating a nickel/gold layer on the patterned circuit on the upper surface, and then forming on the lower surface of the substrate. The circuit layer is then covered with a solder mask, and finally the nickel/gold layer of the lower substrate is formed by electroless plating. Although this method does not consume too much nickel/gold material, and the substrate surface does not need to be separately provided with a plating wire, the complicated and complicated process step 15 not only increases the manufacturing cost but also prolongs the process time. Therefore, there is a need for a method for fabricating an electroless-plated wire package substrate, which can increase the wiring area of the circuit wires, and can provide a good electrical connection quality between the wafer and the package substrate, or between the package substrate and the circuit board; The key nickel/gold process is used to shorten the process time and reduce the production to 20 copies. SUMMARY OF THE INVENTION The present invention relates to a method for fabricating an electroless-plated wire package substrate, which mainly utilizes a metal layer formed on the upper surface and the lower surface of the substrate and electroplated to turn on the inner surface of the hole 1271191 as a current conduction path. An electroplating process is performed and an electrical connection pad is simultaneously formed on the lower surface of the substrate. Wherein, the method for fabricating the electroless wire-bonding substrate of the present invention is to form an upper surface circuit, and then to form an electrical connection between the upper and lower surfaces by the electric money, and finally to form a lower surface circuit by using a patterning process 5 x etching method, that is, complete The process of the electroless wire-bonding substrate of the invention. The present invention provides a method for fabricating an electroless-plated wire package substrate, comprising: step (a) providing a substrate having an upper surface and a lower surface, and the substrate includes a plurality of conductive layers extending through the upper surface and the lower surface of the substrate 10 holes; (b) forming a continuous metal layer on the upper surface and the lower surface of the substrate, and the inner surface of the via; (4) patterning the metal layer on the upper surface of the substrate to form a circuit layer on the upper surface; (4) forming a pattern The first layer is formed on the upper surface and the lower surface of the substrate to reveal a metal layer of a portion of the upper surface and a portion of the metal layer of the lower surface; (4) a metal layer of the tantalum or a metal layer of the metal protective layer exposed on the upper surface a surface of the metal layer exposed on the surface and the lower surface; (1) removing the first resist layer, (g) forming a patterned second resist layer on the upper surface and the lower surface of the substrate '(9) patterning the metal exposed on the lower surface a layer to form a circuit layer of the lower surface = a second barrier layer is removed; and (1) a patterned solder resist layer, a metal protective layer on the upper surface of the chrome and a metal protective layer on the lower surface. 2〇θ In the manufacturing method of the electroless-plated wire package substrate of the present invention, the second resist layer completely covers the metal layer of the upper surface and the metal protective layer, and completely covers the electrical connection layer of the lower surface, and exposes the lower surface. Part of the metal layer is used to process the subsequent lower surface patterned circuit. Therefore, the method for fabricating the electroless-plated wire package substrate of the present invention can increase the number of 1271191 pieces and the package substrate, and the quality can also simplify the circuit wiring area of the surface of the substrate, and can provide good electrical power between the chip g-seal substrate and the circuit board. Sexual connection quality

程以縮短製程時間,並且降低製作成本。故 之無電鍍導線封裝基板可具有良好的產品可 5 間的使用壽命。 本發明無電鍍導線封裝基板之製作方法主要可藉由基 板上表面與下表面、及電鍍導通孔内表面之金屬層^電二 傳導路徑,以提供一形成上下表面電性連接層所需之電 流,而同時於上下表面進行電鍍製程。因此,本發明封裝 10基板之製作方法無須於基板表面另外佈設有電鍍導線,不 僅可大幅提升基板電路之佈線面積,並且可有效地避免傳 統基板佈設電鍍導線所造成之雜訊干擾。 此外,本發明電性連接層主要可用以傳輸電子訊號或 電源,故此金屬保護層係為複數個電性連接墊,以作為晶 15片與封裝基板之電性耦合用、或封裝基板與電路板之電性 耦合用。且在此所述之電性連接墊之種類無限制,較佳可 為打線式半導體封裝基板與晶片電性耦合用之打線焊塾 (wire bonding pad,又可稱為Finger)、封裝基板與電路板電 性耦合用之接觸墊(contact pad或Land)、或其組合。 20 再者,本發明電性連接層所適用之材料無限制,較佳 可為抗環境影響性佳且不易氧化之金屬材,更佳可為金、 鎳、把、銀、錫、鎳/把、鉻/鈥、鎳/金、把/金、鎳/把/金、 或其組合,最佳可為鎳/金(先上鎳後上金)。故此,本發明 電性連接墊除了有助於打線式封裝基板之電性連接塾與金 1277191 線的電性連接,亦可降低外界環境造成電性連接墊氧化之 問題,以提高凸塊、預焊錫、焊球、或金線等植設於電性 連接墊的導電元件之電性品質。 另外,本發明金屬層所使用之材料較佳可為一銅金屬 5 材。本發明無電鍍導線封裝基板之製作方法中,形成導電 層之製程無限制,較佳可採用有電電鍍、無電電鍍、化學 氣相沈積、物理氣相沈積、濺鍍、或其組合,更佳可採用 有電電鍍。 於本發明無電鍍導線封裝基板之製作方法中,步驟(a) 10 所提供之基板可為表面以形成有晶種層(圖未示)之基板’以 利於後續金屬層之形成。其中,晶種層可為一導電材料, 且該導電材料可為至少一選自由銅、錫、鎳、鉻、及鈦所 組成羣組之材料。 本發明無電鍍導線封裝基板之製作方法可適用於任一 15 種封裝基板,較佳可為打線式(wire bonding)封裝基板。本 發明適用之基板結構可為單層電路板,還可為已完成前段 線路製程之兩層板或多層電路板。 另外,本發明基板所適用之絕緣材料無限制,較佳可 為有機薄膜介電材或液態有機樹脂材料所組群組之其中一 20 者;上述材質係可選自 ABF(Ajinomoto Build-up Film )、 BCB(Benzocyclo-buthene)、LCP(Liquid Crystal Polymer)、 Pl(Poly-imide) 、 PPE(Poly(phenylene ether)) 、 PTFE(Poly(tetra-fluoroethylene)) 、 FR4 、 FR5 、 BT(Bismaleimide Triazine)、芳香尼龍(Aramide)等感光或非 1277191 ( 感光有機樹脂,或亦可混合環氧樹脂與玻璃纖維等材質所 構成。 、 再者’本發明中所使用之阻層可為習用微影製程所適 用之阻層材料較佳可為一光感材料,且該光感材料可為至 5少一選自由乾膜(dry film)、及液態光阻所組成群組之材 料。且,本發明中阻層之形成無限制,較佳可利用印刷、 旋轉塗佈、貼合、化學沈積、物理沈積或前述方式之。 • 本發明無電鍍導線封裝基板之製作方法先形成上表面 線路層後,可利用下表面與電鍍導通孔内表面之全銅面作 1〇為電流傳導路徑,以電鍍方式同時形成上下表面之電性連 接墊,最後再藉由圖案化製程以蝕刻方式形成下表面電 路,即完成無電鍍導線封裝基板之製程。藉此,本發明製 作方法可滿足「細間距封裝」(finepitchb〇nding)2需求, 以製作一咼緻岔化電路佈線之封裝基板。 15 本發明無電鍍導線封裝基板之製作方法不僅可簡化製 • &步驟’即縮短製程所f時間’亦可降低製作成本且提升 產π口良率,以增加產品之市場競爭力。 【實施方式】 實施例一 請參閱圖3所示,圖3(a)至圖3⑴為本發明-較佳實施例 無電鍵導線之封|基板之製㈣意圖。 、 二先,如圖/⑷所示,提供—基板3,且基板3之上下表 面白C 口銅4 31 ’以構成核心基板結構。接著,利用雷 20 1277191Process to shorten process time and reduce production costs. Therefore, the electroless wire package substrate can have a good product life of five. The method for fabricating the electroless wire-bonding substrate of the present invention can mainly provide a current required for forming the electrical connection layer of the upper and lower surfaces by the upper surface and the lower surface of the substrate, and the metal layer and the second conductive path of the inner surface of the plated via hole. At the same time, the electroplating process is performed on the upper and lower surfaces. Therefore, the manufacturing method of the package 10 substrate of the present invention does not need to additionally provide a plating wire on the surface of the substrate, which not only can greatly increase the wiring area of the substrate circuit, but also can effectively avoid the noise interference caused by the plating of the conventional substrate. In addition, the electrical connection layer of the present invention can be mainly used to transmit an electronic signal or a power source. Therefore, the metal protection layer is a plurality of electrical connection pads for electrically coupling the crystal 15 and the package substrate, or the package substrate and the circuit board. For electrical coupling. The type of the electrical connection pad described herein is not limited, and is preferably a wire bonding pad (Finger), a package substrate and a circuit for electrically bonding the wire-type semiconductor package substrate and the wafer. Contact pad or land for electrical coupling, or a combination thereof. Further, the material suitable for the electrical connection layer of the present invention is not limited, and is preferably a metal material which is resistant to environmental influences and is not easily oxidized, and more preferably may be gold, nickel, handle, silver, tin, nickel/ , chrome / niobium, nickel / gold, handle / gold, nickel / handle / gold, or a combination thereof, preferably nickel / gold (first nickel and then gold). Therefore, in addition to facilitating the electrical connection between the electrical connection of the wire-bonding package substrate and the gold 1271191 line, the electrical connection pad of the present invention can also reduce the problem of oxidation of the electrical connection pad caused by the external environment, thereby improving the bump and the pre-preg. The electrical quality of conductive components such as solder, solder balls, or gold wires implanted in electrical pads. Further, the material used for the metal layer of the present invention may preferably be a copper metal material. In the method for fabricating the electroless plating package substrate, the process for forming the conductive layer is not limited, and preferably electroplating, electroless plating, chemical vapor deposition, physical vapor deposition, sputtering, or a combination thereof is preferably used. Electroplating can be used. In the method for fabricating the electroless wire-bonding substrate of the present invention, the substrate provided in the step (a) 10 may be a surface to form a substrate of a seed layer (not shown) to facilitate formation of a subsequent metal layer. The seed layer may be a conductive material, and the conductive material may be at least one material selected from the group consisting of copper, tin, nickel, chromium, and titanium. The method for fabricating the electroless wire-bonding substrate of the present invention can be applied to any of 15 kinds of package substrates, preferably a wire bonding package substrate. The substrate structure to which the present invention is applicable may be a single-layer circuit board, or may be a two-layer board or a multi-layer circuit board that has completed the front-end line process. In addition, the insulating material to which the substrate of the present invention is applied is not limited, and preferably one of 20 groups of organic thin film dielectric materials or liquid organic resin materials; the above material may be selected from ABF (Ajinomoto Build-up Film) ), BCB (Benzocyclo-buthene), LCP (Liquid Crystal Polymer), Pl (Poly-imide), PPE (Poly (phenylene ether)), PTFE (Poly (tetra-fluoroethylene)), FR4, FR5, BT (Bismaleimide Triazine) ), fragrant nylon (Aramide), etc., or non-1277191 (photosensitive organic resin, or may be mixed with epoxy resin and glass fiber, etc.), and the resist layer used in the present invention may be a conventional lithography process. Preferably, the resist material is a photo-sensitive material, and the photo-sensitive material may be selected from the group consisting of a dry film and a liquid photoresist. The formation of the intermediate resist layer is not limited, and may preferably be printed, spin coated, bonded, chemically deposited, physically deposited, or the like. • The method for fabricating the electroless wire-bonding substrate of the present invention is formed after the upper surface wiring layer is formed. The upper surface and the entire copper surface of the inner surface of the plated via are used as a current conduction path, and the electrical connection pads of the upper and lower surfaces are simultaneously formed by electroplating, and finally the lower surface circuit is formed by etching by a patterning process, that is, The process of the electroless-plated wire package substrate is completed. Thus, the fabrication method of the present invention can meet the requirements of the "fine pitch package" (finepitchb〇nding 2) to fabricate a package substrate for the deuterated circuit wiring. The manufacturing method of the package substrate not only simplifies the manufacturing process and the process of shortening the process time, but also reduces the manufacturing cost and improves the yield of the π port to increase the market competitiveness of the product. [Embodiment] Referring to FIG. 3, FIG. 3(a) to FIG. 3(1) are the first embodiment of the present invention-preferred embodiment of the present invention without a key conductor (the fourth), and the second substrate, as shown in FIG. And the lower surface of the substrate 3 is white C copper 4 31 ' to form a core substrate structure. Next, using Ray 20 1277191

: 射或機械鑽孔技術於基板3内部形成複數個通孔32,以提供 一如圖3(b)之基板結構。 在進行電鍍形成一金屬層33於基板3之上下表面及導 通孔32内表面之步驟前,先利用化學鍍形成一薄薄的晶種 5層(圖未示)於基板之上下表面及導通孔32之内表面,以利於 後續電鍍沈積一結構完整之銅金屬層33。如圖3(c)所示,形 成一電鍍銅金屬層33於基板3表面與通孔32之内表面,且該 • 金屬層33是作為後續電鍍金屬保護層33所需之電流傳導路 徑。接著,將絕緣樹脂填入電鍍導通孔334中,即提供一如 10 圖3(d)之基板結構。 如圖3(e)所示,利用一圖案化蝕刻製程,於基板之上表 面形成一圖案化之金屬層33,以提供上表面之線路佈設; 且於上表面所形成之線路層中,上表面欲形成金屬保護層 處需與電鑛導通孔334之電性連接,方可進行後續之電鑛錄 15 /金製程。: A shot or mechanical drilling technique forms a plurality of vias 32 in the substrate 3 to provide a substrate structure as shown in Figure 3(b). Before electroplating to form a metal layer 33 on the lower surface of the substrate 3 and the inner surface of the via hole 32, a thin thin seed crystal 5 layer (not shown) is formed on the upper surface of the substrate and the via hole by electroless plating. The inner surface of 32 is used to facilitate subsequent deposition of a structurally complete copper metal layer 33. As shown in Fig. 3(c), an electroplated copper metal layer 33 is formed on the surface of the substrate 3 and the inner surface of the via hole 32, and the metal layer 33 serves as a current conduction path required for the subsequent plating of the metal protective layer 33. Next, an insulating resin is filled in the plating via 334 to provide a substrate structure as shown in Fig. 3(d). As shown in FIG. 3(e), a patterned etching process is used to form a patterned metal layer 33 on the upper surface of the substrate to provide a line layout on the upper surface; and in the circuit layer formed on the upper surface, The surface of the surface to be formed with a metal protective layer needs to be electrically connected to the electric ore via 334 for the subsequent electro-mineral 15 / gold process.

20 田基板3上表面完成線路佈設後,即於基板^之上表面 與下表面形成—第-阻層34 ’並且再藉由圖案化製程以形 成-圖案化之第一阻層34,以顯露出部分上表面之金屬層 直φ/刀下表面之金屬層33。上述基板結構係圖3⑴所示, ^下表面顯露之金屬層挪作為後續電懸屬保護 肩35之處。 如圖3(g)所示,藉 相通,即能於上下表面 上下表面之金屬保護層 由基板3下表面與電鍍導通孔32電性 顯露之導電層33處,同時電鍍形成 35。本例上下表面所形成之金屬保 12 1277191After the top surface of the substrate 3 is finished, the first and second resistive layers 34 are formed on the upper surface and the lower surface of the substrate, and the first resist layer 34 is patterned by a patterning process to reveal A portion of the upper surface of the metal layer is straight φ / the metal layer 33 of the lower surface of the knife. The above substrate structure is shown in Fig. 3 (1), and the metal layer exposed on the lower surface is moved as a subsequent electro-suspension protection shoulder 35. As shown in Fig. 3(g), the metal protective layer on the upper and lower surfaces of the upper and lower surfaces is formed by electroplating at the same time as the conductive layer 33 which is electrically exposed on the lower surface of the substrate 3 and the plated via 32. The metal formed on the upper and lower surfaces of this example 12 1277191

濩層35皆為一錄/金材料 圖3(h)所示之基板結構。The ruthenium layer 35 is a recording/gold material. The substrate structure shown in Fig. 3(h).

隨後移除第一阻層34,即獲得如 5 10 緊接著再覆蓋第二阻層歸基板3之上表面與下表 面,並且使用-圖案化製程以形成—具有圖案化之第二阻 層35。請參閱圓3⑴所示之結構,第二阻層%是完全覆蓋了 上表面之金屬層33與金屬保護層35,且第二阻層%亦完全 覆盍下表面之金屬保護層35,而顯露出下表面部分的金屬 層33。最後’如圖3⑴與圖冲)所*,圖案化敍刻該下表面 所顯露之金屬層33,並且移除第二阻層36,即完成了基板3 下表面之線路佈設。 如圖3(1)所示,故此,於本實施例基板3上表面之路線 中,金屬保護層35覆蓋於複數個可與電鍍導通孔说電性導 通之第一電性連接墊331,且該等電性連接墊均用以作為晶 片(圖未示)與封裝基板3打線時電性耦合用之焊墊。於本實 15施例基板3下表面之路線,金屬保護層%覆蓋於可與電鍍二 通?32電性導通之第二電性連接墊如、以及電流未導心之 第三電性連接墊333表面,且該等電性連接墊均用以作為封 裝基板3與電路板(圖未示)電性耦合用之焊球墊。其中該第 三電性連接墊333可為電性獨立之電性連接墊。 人 2〇 、為了保護基板3上下表面之銅導線電路,本實施例製作 方法之最後步驟是塗覆一防焊層37如綠漆或黑漆材料於已 完成電路佈線之基板表面,並且隨後進行圖案化製料防 焊層37,以顯露上表面之金屬保護層35與下表面之金屬保 護層3 5。 ’、 13 25 1277191 除了本實施例所述之電性接觸墊之外,凡基板3需進行 電鑛鎳/金製程部分,皆可藉由本發明揭示之方法而形成其 電鍍鎳/金之結構。 綜上所述,本發明無電鍍導線封裝基板之製作方法不 5 僅可簡化製程步驟,即縮短製程所需時間,亦可降低製作 成本且提升產品良率,以增加產品之市場競爭力。再者, 本發明製作方法除了可增加基板電路導線之佈線面積,尚 無須於整層的線路層表面均鍍有鎳/金層,如此可大幅降低 電鍍鎳/金之成本,且還可提供晶片與封裝基板、或封裝基 1〇板與電路板間良好的電性連接品質,而免除導線氧化^ 題。 上述實施例僅係為了方便說明而舉例而已,本發明所 主張之權利範圍自應以申請專利範圍所述為準’而非僅限 於上述實施例。 15 20 1277191 【圖式簡單說明】 圖1係習知具有電鍍導線之封裝基板之剖面示意圖。 圖2(a)至圖2(d)係習知無電鍍導線之封裝基板之製程示意 圖。 5圖3(句至圖3(1)係本發明一較佳實施例無電鍍導線之封裝基 板之製程示意圖。 1〇 【主要元件符號說明】 1基板 12 17〇接點 21導電層 24線路層 32導通孔 35電性連接層 334電鍍導通孔 333第三電性連接墊Subsequently, the first resist layer 34 is removed, that is, the second resist layer is then covered, and then the upper surface and the lower surface of the substrate 3 are covered, and a patterning process is used to form a second resist layer 35 having a pattern. . Referring to the structure shown in the circle 3 (1), the second resist layer % completely covers the metal layer 33 of the upper surface and the metal protective layer 35, and the second resist layer % completely covers the metal protective layer 35 of the lower surface, and is revealed. The metal layer 33 of the lower surface portion is taken out. Finally, as shown in Fig. 3(1) and Fig. 3, the metal layer 33 exposed on the lower surface is patterned and the second resist layer 36 is removed, that is, the wiring of the lower surface of the substrate 3 is completed. As shown in FIG. 3 (1), in the route of the upper surface of the substrate 3 of the present embodiment, the metal protection layer 35 covers a plurality of first electrical connection pads 331 electrically conductive with the plating vias, and The electrical connection pads are used as pads for electrically coupling the wafer (not shown) and the package substrate 3 when they are wired. In the way of the lower surface of the substrate 3 of the embodiment of the present invention, the metal protective layer is covered by the second plating. The second electrical connection pad electrically conductive, for example, and the surface of the third electrical connection pad 333, which is not electrically conductive, and the electrical connection pads are used as the package substrate 3 and the circuit board (not shown) Solder ball mat for electrical coupling. The third electrical connection pad 333 can be an electrically independent electrical connection pad. In order to protect the copper wire circuit on the upper and lower surfaces of the substrate 3, the final step of the manufacturing method of the present embodiment is to apply a solder resist layer 37 such as green paint or black lacquer material to the surface of the substrate on which the circuit wiring has been completed, and then proceed. The material solder resist layer 37 is patterned to expose the metal protective layer 35 on the upper surface and the metal protective layer 35 on the lower surface. </ RTI> 13 25 1277191 In addition to the electrical contact pads described in this embodiment, the substrate 3 is subjected to an electro-mineral nickel/gold process portion, and the structure of the electroplated nickel/gold can be formed by the method disclosed in the present invention. In summary, the method for fabricating the electroless wire-bonding substrate of the present invention does not simplify the process steps, that is, shortens the time required for the process, reduces the manufacturing cost, and improves the product yield, thereby increasing the market competitiveness of the product. Furthermore, in addition to increasing the wiring area of the circuit traces of the substrate, the method of the present invention does not need to be plated with a nickel/gold layer on the surface of the entire circuit layer, which can greatly reduce the cost of electroplating nickel/gold, and can also provide a wafer. Good electrical connection quality with the package substrate, or the package substrate 1 and the board, eliminating the need for wire oxidation. The above-described embodiments are merely examples for the convenience of the description, and the scope of the claims is intended to be limited to the scope of the claims. 15 20 1277191 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a package substrate having a plated wire. 2(a) to 2(d) are schematic views showing the process of a conventional package substrate of an electroless plating wire. 5 (Fig. 3 (1) is a schematic diagram of a process for a package substrate of an electroless wire according to a preferred embodiment of the present invention. 1 〇 [Main component symbol description] 1 substrate 12 17 〇 contact 21 conductive layer 24 circuit layer 32 via hole 35 electrical connection layer 334 plating via hole 333 third electrical connection pad

10線路層 11電鑛導線 2基板 23鎳/金層 31銅箔 13錄/金層 22光阻層 3基板 33金屬層 34第一阻層 36第二阻層 37防焊層 ^ 電性連接塾332第二電性連接塾 1510 circuit layer 11 electric ore wire 2 substrate 23 nickel/gold layer 31 copper foil 13 recording / gold layer 22 photoresist layer 3 substrate 33 metal layer 34 first resistance layer 36 second resistance layer 37 solder mask layer ^ electrical connection 332 second electrical connection 塾 15

Claims (1)

12771911277191 十、申請專利範圍: 1· 一種無電鍍導線之封裝基板之製作方法,包括以下 步驟: ()ki、具有一上表面與一下表面之基板,且該基板 係包括複數個貫通該基板上表面與下表面之導通孔; (b)形成一連續之金屬層於該基板之上表面與下表 面、以及該等導通孔之内表面; ⑷圖案化該基板上表面之金屬層,以形成上表面線路 10 (d)形成一具有圖案化之第一 與下表面,以顯露出部分該上表面 面之金屬層; 阻層於遠基板之上表面 之金屬層與部分該下表 15 ⑷電鑛形成-金屬保護層於該上表面顯 表面與該下表面顯露之金屬層表面; (0移除該第一阻層; 露之金屬層X. Patent application scope: 1. A method for manufacturing a package substrate without an electroplated wire, comprising the following steps: () ki, a substrate having an upper surface and a lower surface, and the substrate includes a plurality of upper surfaces penetrating the substrate and a via hole on the lower surface; (b) forming a continuous metal layer on the upper surface and the lower surface of the substrate, and inner surfaces of the via holes; (4) patterning a metal layer on the upper surface of the substrate to form an upper surface line 10 (d) forming a patterned first and lower surface to expose a portion of the upper surface of the metal layer; a resist layer on the surface of the upper substrate and a portion of the lower surface 15 (4) of the ore formation - a metal protective layer on the surface of the upper surface and the surface of the metal layer exposed by the lower surface; (0 removing the first resistive layer; exposed metal layer 虿圖案化之第 20 與下表面,其中該第二阻層係完全;; 與金屬保護層,該第二阻層係完全;面之金屬 護層’且顯露出該下表面之部分金:層;…面之金眉 線路Γ圖案化該下表面顯露之金屬層,以形成之下心 ⑴移除該第 阻層;以及 16 1277191 15 20 “ 2.如申請專利範圍第i項所述之方法,其中步驟⑷係 藉由該電鑛導通孔之内夹面盘 、 、札I円衣面與忒下表面之金屬層傳導電 流,以進行電錢。 3·如申請專利範圍第1項所述之方法, 護層係包含複數個電性連接墊。 4·如申請專利範圍第2項所述之方法, 接塾係為一打線焊墊。- 5·如申請專利範圍第2項所述之方法, 接墊係為一焊球墊。 6·如申請專利範圍第丨項所述之方法, 1層係為-金屬材料,且該金屬材料係為金、鎳、叙、銀、 她、鉻/鈦、錄/金、他/金,/金、或其組合。 7·如申請專利範圍第丨項所过 ^ ^ ^ ^ β迩之方法,其中該步驟(a) 之基板係為表面具有一晶種層之基板。 8·如申請專利範圍第7項所过 儉兔一道® 汀江之方法,其中該晶種層 禮、枚、η ^ ^ 、 十係為至少一選自由銅、錫、 鎳、及鈦所組成羣組之材料。 9.如申請專利範圍第丨項所 係為-銅金屬I 《之方法,其中該金屬層 ίο.如申請專利範圍第丨項所 為單層電路板。 之方法,其中該基板係 11. 如申請專利範圍第!項所述 多層電路板。 7忒兵宁忒基板係為 12. 如申請專利範圍第i項所 之方法,其中該等阻層係 其中d亥金屬保 其中該電性連 其中該電性連 其中該金屬保 17 1277191 為一光感材料,且該光感材料係為至少一選自由乾膜、及 液態光阻所組成群組之材料。 13.如申請專利範圍第1項所述之方法,其中該等阻層之 形成係利用印刷、旋轉塗佈、貼合、化學沈積、或物理沈 5 積0第 patterning the 20th and lower surfaces, wherein the second resistive layer is completely;; and the metal protective layer, the second resistive layer is completely; the metal clad layer of the surface and revealing a portion of the lower surface of the gold layer: The surface of the gold eyebrow line Γ patterning the metal layer exposed on the lower surface to form the lower core (1) to remove the first resist layer; and 16 1277191 15 20 " 2. The method of claim i, Wherein the step (4) is to conduct electricity by the metal layer of the inner face plate, the cloth surface of the electric mine, and the metal surface of the underarm surface to carry out electric money. 3. As described in claim 1 The method includes a plurality of electrical connection pads. 4. The method of claim 2, wherein the interface is a wire bonding pad. - 5 · The method of claim 2 The pad is a solder ball pad. 6. As described in the scope of the patent application, the first layer is a metal material, and the metal material is gold, nickel, Syrian, silver, her, chromium / Titanium, record / gold, he / gold, / gold, or a combination thereof. 7 · If the scope of the patent application is passed ^ ^ ^ The method of β迩, wherein the substrate of the step (a) is a substrate having a seed layer on the surface. 8· The method of the reindeer® Tingjiang method according to item 7 of the patent application scope, wherein the seed layer The ceremony, the piece, the η ^ ^ , and the tenth line are at least one material selected from the group consisting of copper, tin, nickel, and titanium. 9. The method of the second aspect of the patent application is - the method of copper metal I, Wherein the metal layer ίο. is a single-layer circuit board according to the scope of the patent application. The method of the substrate is 11. The multilayer circuit board according to the scope of the patent application. The method of claim i, wherein the resist layer is wherein the electrical connection is electrically connected to the metal protection 17 1277191 as a photosensitive material, and the photosensitive material is The method is at least one selected from the group consisting of a dry film and a liquid photoresist. The method of claim 1, wherein the formation of the resist layer is by printing, spin coating, and pasting. Combination, chemical deposition, or physical sinking 1818
TW95107617A 2006-03-07 2006-03-07 Method for manufacturing leadless package substrate TWI277191B (en)

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