TWI272885B - Method for forming presolder bump on circuit board by translate plate technique - Google Patents
Method for forming presolder bump on circuit board by translate plate technique Download PDFInfo
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- TWI272885B TWI272885B TW91107396A TW91107396A TWI272885B TW I272885 B TWI272885 B TW I272885B TW 91107396 A TW91107396 A TW 91107396A TW 91107396 A TW91107396 A TW 91107396A TW I272885 B TWI272885 B TW I272885B
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- solder
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- transfer plate
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
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Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
1272885 ____案號 91107396_年月日_修正__ 五、發明說明(1) 發明領域: 本發明係有關於一種經轉移板技術形成電路板上預銲 錫凸塊(preso 1 der bump)之製法,特別是關於經由轉移 板形成之預銲錫之輔助,迴焊(refl〇w)在電路板上之預 銲錫用以形成覆晶封裝及電路板間之銲接,應用於形成覆 晶元件。 發明背景: 自IBM公司在1 9 6 0年早期揭露出覆晶(nip一chip)封 裝技術以來,覆晶封裝元件即主要設置在價格昂貴之陶瓷 電路板上,於此結構中,矽晶片與陶瓷電路板間的熱膨脹 關係則由於差異小,因此在使用上並不致於造成明顯的可 罪度問過。其與一般打金線(w i r e _ b 0 n d i ng)封裝方式相 比較,覆晶方式可提供較高的封裝密度(低元件輪廓)及 南電性性此(較短的導線與低電感)。有鑑於此,業界覆 曰曰封I技術已使用咼溫銲錫於陶莞電路板上有4 〇年之久, 即所謂控制崩解晶片連接技術(control_c〇llapse chip connection, C4)。然而近年來,在現代電子產品漸小化 ”!度古:i度及低成本的趨勢下,將覆晶元件鑲嵌於 低,本之二機=板上’並利用環氧樹脂底膠於 underfill) 填充於晶片下古丨v # i-丄 ^ y 板結構間的熱應力所產生之不㈣,已呈現出爆:::: 長。而業界矚目的低溫覆晶銲接與有機電路之: 可使業界得以達到低成本覆晶封裝之目的。 j用更 在一般低成本之覆晶#裝技術中,半導體叫片的最 1272885 修正 ---^-^J11073flR ^^ 五、發明說明(2) 一 斜Ϊ ^ Ξ係有若干輝塾之設計’而有機電路板亦有若干相 你 w 1接觸窗(contact)設計;在晶片與電路板間 執有&溫鋒锡凸塊或其他導電性黏著材設置,且晶片具銲 一 Ξ 2 2 了亚鑲嵌於電路板上’其中銲錫凸塊或導電性黏 1材提1晶片與電路板間的電性輸出/輸入及機械性連 1^錫凸塊而言’在晶片與電路板間的間隙可填入之 伙俏二ί ( Underf i 1 1),藉此可壓制熱膨脹之不協調及 降低i干錫接之應力。 ^ I而a ,為使銲錫接形成覆晶裝配,通常金屬凸 J如銲錫凸塊、金凸塊或銅凸塊等,係預先形成於晶 =^極紅墊表面上,而其中凸塊可為任何形狀,係如釘 枉大凸塊球开》凸塊、柱狀凸塊或其他形狀。而對鹿的銲 錫凸塊(或稱預銲錫凸塊(pres〇lder bump))則;^常使 用低溫銲錫,亦形成於電路板之接觸銲墊上。在一迴焊 (reflow)溫度下,晶片以銲錫接與電路板鍵結在一起, 而在晶片與電路板間佈設底膠之後,覆晶元件即完 作。而以銲錫接形成覆晶元件之典型例子可參考圖一及圖 。ί:圖一,係為應用金屬凸塊及預鮮錫凸塊之典 曳例子。金屬凸塊11係形成於晶片13之電極銲墊12上,而 凸塊14,則形成於電路板16之接 叶墊圖一 Α所示。接著在一迴焊溫度使熔解簪 f塑預銲錫凸塊14以形成銲錫接17 ( s〇lder 一 著’佈設底膠(underfill) ]8於曰片im千办 隙德,所汁夕举日- # / 18於日日片13與電路板16之間 隙後所述之覆晶兀件1於焉完成,如圖一 B所示。 a曰 再蒼閱圖二A至B,係為另一未應用預銲錫凸塊之覆 第5頁1272885 ____ Case No. 91107396_年月日日_Amendment__ V. Description of the Invention (1) Field of the Invention: The present invention relates to a method for forming a pre-solder bump on a circuit board by a transfer plate technique In particular, with regard to the auxiliary solder formed by the transfer plate, reflow soldering on the circuit board is used to form a flip chip package and soldering between the circuit boards, and is applied to form a flip chip element. BACKGROUND OF THE INVENTION Since IBM revealed the nip-chip packaging technology in the early 1960s, flip-chip package components have been mainly placed on expensive ceramic circuit boards. In this structure, germanium wafers and The thermal expansion relationship between ceramic circuit boards is small because of the small difference, so it does not cause obvious suspicion in use. Compared with the general gold wire (w i r e _ b 0 n d i ng) package method, the flip chip method can provide higher packing density (low component profile) and southergenicity (shorter wire and low inductance). In view of this, the industry's overlay I technology has used solder paste on the Taowan circuit board for 4 years, the so-called control chip connection technology (control_c〇llapse chip connection, C4). However, in recent years, in the modern electronic products are gradually becoming smaller! Under the trend of i-degree and low cost, the flip-chip components are embedded in the low, the second machine = the board' and the epoxy resin is used in the underfill. The thermal stress caused by the structure of the 丨 # # # # # # # # # # # # # # # # 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 # # # # # # # # # # # # # # # # To enable the industry to achieve the purpose of low-cost flip chip packaging. j used in the general low-cost flip chip # loading technology, the semiconductor called the most 1272885 correction --- ^-^J11073flR ^ ^ five, invention description (2) A slanting Ϊ ^ Ξ has a number of radiant designs' and the organic circuit board also has several phases of your w 1 contact design; between the wafer and the board with & Wenfeng tin bumps or other conductivity Adhesive material is set, and the wafer is soldered. 2 2 is sub-arranged on the circuit board. The solder bump or conductive adhesive 1 is used to make electrical output/input and mechanical connection between the chip and the circuit board. In the case of bumps, the gap between the wafer and the board can be filled with the ruthlessness (Underf i 1 1), thereby suppressing the uncoordinated thermal expansion and reducing the stress of the i dry tin joint. ^ I and a, in order to make the solder joint to form a flip chip assembly, usually a metal bump such as solder bump, gold bump or copper A bump or the like is formed on the surface of the crystal red pad in advance, and wherein the bump may be any shape, such as a pin-shaped large bump ball, a bump, a column bump or the like. Solder bumps (or pre- solder bumps); often use low-temperature solder, also formed on the contact pads of the board. At a reflow temperature, the wafer is soldered After the bond is bonded to the circuit board, the flip chip is completed after the primer is disposed between the wafer and the circuit board, and a typical example of forming the flip chip by soldering can be referred to FIG. 1 and FIG. For example, a metal bump 11 is formed on the electrode pad 12 of the wafer 13, and a bump 14 is formed on the blade pad of the circuit board 16. Α. Then, at a reflow temperature, the melting 簪f is molded into the pre-solder bump 14 to form a solder joint 17 (s〇lder one '"underfill"] 8 in the 曰 im im 千 千 , , 所 所 所 所 所 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - As shown in Figure 1B. a曰 Then read Figure 2A to B, which is another application of pre-solder bumps.
1272885 __MMl 五、發明說明(3) 元件2之典型例子。銲錫凸塊21係形成於晶片“之電極’ 墊2 2上,而晶片2 3在一迴焊溫度下與電路板2 4鍵結,如 二A所示,且此時銲錫接25形成於接觸銲墊26上。同樣回 地’在佈設底膠2 7於晶片2 3與電路板2 4之間隙後,即完成 覆晶元件2, 如圖二B所示。 一般而言,形成預銲錫凸塊於電路板上之最常見方法 為核版印刷法(stencil printing)。一些參考資料揭露 模版印刷法技術可參考11.8.?&1:.1^〇3.5,2 0 3,0 7 5 (〇· G. Angulas et al), 5,492,266 (K. G. Hoebener ct al)與 5, 8 28, 1 28 (Υ· Higashiguchi et al )。覆晶裝 配之銲錫凸塊技術之選用則包含凸塊間距與尺寸縮小化之 雙重考量。根據實際經驗,當凸塊間距在〇. 1 5 mm以下 時,模版印刷法即產生製作之困難,而必須改採電鍍法製 作,而習知有關於覆晶封裝在電路板上製作電鍍凸塊之技 術,則可參考 U· S. Pat· Nos· 5, 391,514 (Τ· P. Gal 1 et al)與 5,480,835 (Κ· G· Hoebener et al)。然而 雖然以電鍍法在電路板上製作之銲錫凸塊之間距較模版印 刷法佳,但實施上仍有一些缺點存在,例如在銲錫凸塊之 製程中,有機絕緣保護層必須不受傷害,以避免影響產品 可靠度。同時,電鍍及凸塊高度之一致性必須加以掌控。 而這些細節部分在U.S. Pat· Nos· 5,391,514及 5, 48 0, 8 3 5皆未被揭露出。 有鑑於此,本發明係提供一種經轉移板技術形成電路 板上預得錫凸塊之製法,其係為在有機電路板上形成良好 凸塊間距銲錫凸塊之製程(亦即小於〇 · 1 5 mm),不但不1272885 __MMl V. Description of the invention (3) Typical example of component 2. The solder bumps 21 are formed on the "electrode" pad 2 2 of the wafer, and the wafer 23 is bonded to the circuit board 24 at a reflow temperature, as shown by the second A, and the solder joint 25 is formed in contact at this time. On the solder pad 26, the same is returned to the ground layer 2 after the gap between the wafer 2 3 and the circuit board 24 is completed, as shown in Fig. 2B. Generally, a pre-solder bump is formed. The most common method of blocking on a circuit board is stencil printing. Some references reveal stencil printing techniques can refer to 11.8.?&1:.1^〇3.5,2 0 3,0 7 5 ( G. Angulas et al), 5, 492, 266 (KG Hoebener ct al) and 5, 8 28, 1 28 (Υ·Higashiguchi et al). The choice of solder bump technology for flip chip assembly includes bump pitch and size reduction According to the actual experience, when the bump pitch is less than 1.25 mm, the stencil printing method is difficult to produce, and it must be changed by electroplating. However, it is known that flip chip is packaged on the circuit board. For the technique of making electroplated bumps, refer to U.S. Pat. Nos. 5, 391, 514 (Τ· P. Gal 1 et al) 5,480,835 (Κ·G· Hoebener et al). However, although the solder bumps fabricated on the board by electroplating are better than the stencil printing method, there are still some shortcomings in the implementation, such as solder bumps. In the block process, the organic insulation must be protected from damage to avoid product reliability. At the same time, the consistency of plating and bump height must be controlled. These details are in US Pat· Nos 5,391,514. And 5, 48 0, 8 3 5 are not disclosed. In view of this, the present invention provides a method for forming a predetermined tin bump on a circuit board by a transfer plate technique, which is formed on an organic circuit board. The process of bump pitch solder bumps (ie less than 〇 · 15 mm), not only
1272885 主月 曰_修正 並可提供銲錫凸塊高度之一致 —__案號 91107396 五、發明說明(4) 會傷害有機絕緣保護層 性。 發明之簡要說明: 本發明之主要目的在於提供一種經轉移板技術形成電 路板上預銲錫凸塊之製法,不會傷害防焊膜(s 〇 1 d e r mask layer),形成銲錫凸塊用以製作覆晶封裝元件與電 路板間或電路板與電路板間之銲接。 ' % 本發明之另一目的在於提供一種經轉移板技術形成電 路板上預銲錫凸塊之製法,該轉移板包含至少一表面具縮 錫特性’可以電性導通供電艘製程,且電鍍銲錫 (electroplating solder)即形成在其表面上。 本發明之再一目的在於提供一種經轉移板技術形成 路板上預銲錫凸塊之製法,該轉移板包含至少一表面具ρ 錫特性,可為導電性或非導電性,且無電鍍銲錫 (electroless plating solder)即形成在置表面卜 本發明之再-目的在於提供一種經轉移板=成電 路板上預銲錫凸塊之製法,其中該電路板包含一設有若干 電路佈局之表面,且設有至少一銲墊。該電路板之電^展 係以若干有機絕緣層區隔開;且該有機絕緣層係以有機= 料、纖維強化有機材、或顆粒強化有機材所構成。 本發明之再一目的在於提供一種經轉移板技術形 路板上預銲錫凸塊之製法,該轉移板係安置於電路板上, 而該轉移板上形成之銲錫則可以對準電路板上的銲墊。而 在迴焊過程之後,所述之銲錫於是熔解並成為球狀銲锡,1272885 Main month 曰 _ correction and can provide the same height of solder bumps — __ Case No. 91107396 V. Invention description (4) will damage the organic insulation protection layer. Brief Description of the Invention: The main object of the present invention is to provide a method for forming a pre-solder bump on a circuit board by a transfer plate technique without damaging the solder mask (s 〇 der mask layer) and forming solder bumps for fabrication. Solder between flip chip package components and between boards or between boards and boards. '% Another object of the present invention is to provide a method for forming a pre-solder bump on a circuit board by a transfer plate technology, the transfer plate comprising at least one surface having a tin-reducing property' electrically conductive power supply process, and electroplating solder ( Electroplating solder is formed on its surface. It is still another object of the present invention to provide a method for forming a pre-solder bump on a road surface by a transfer plate technique, the transfer plate comprising at least one surface having a p-tin property, which may be electrically or non-conductive, and electrolessly soldered ( Electroless plating solder) is formed on the surface of the present invention. The object of the invention is to provide a method for forming a pre-solder bump on a circuit board by using a transfer board, wherein the circuit board comprises a surface having a plurality of circuit layouts. There is at least one pad. The circuit board is separated by a plurality of organic insulating layer regions; and the organic insulating layer is composed of an organic material, a fiber-reinforced organic material, or a particle-reinforced organic material. A further object of the present invention is to provide a method for manufacturing a pre-solder bump on a transfer board, which is disposed on a circuit board, and the solder formed on the transfer board can be aligned on the circuit board. Solder pad. After the reflow process, the solder then melts and becomes a spherical solder.
第7頁 1272885 —__案號 911Q73%_车月日 你π: _ 五、發明說明(5) 而最後座落於該電路板上之銲墊。 為達上述之目的,本發明係提供一種經轉移板技術形 成電路板上預銲錫凸塊之製法,其步驟包括:首先提供一 部分表面具縮錫(dewetting)特性之轉移板(translate plate) ’其可為電導性以形成電鑛ί于錫 (electroplating solder),或為非電導性以形成無電 鍍銲錫(electroless plating solder);在該轉移板上 形成銲錫,之後將該轉移板置於一有機電路基板上;該有 機電路基板係設有若干電路佈局,其上並設有至少一銲 墊,以作為該轉移板銲錫與該電路板之對準標的;進行迴 焊,轉移板之銲錫於是熔解並成為球狀銲錫,最後座落於 電路板之銲墊上。 為了使 貴審查委員對本發明之目的、特徵及功效, 有更進一步的瞭解與認同,茲配合圖式詳加說明如後·· 詳細說明: 為了使 貴審查委員對本發明之目的、特徵及功效, 有更進一步的瞭解與認同,茲配合圖式詳加說明如後。當 然,本發明可以多種不同方式實施,並不只限於本說明^ 中所述内容。 胃 本發明係有關於一種經轉移板技術形成電路板上預鮮 錫凸塊(presolder bump)之製法,其可形成具良好* ^ 一致性之銲錫凸塊,但卻不會傷害電路板上之“絕二 護層。然而,本發明之圖式僅為簡單說明,並非依f斤尺 度描繪,亦即未反映出晶片載體結構中,各層次之^ ^尺Page 7 1272885 —__ Case No. 911Q73%_车月日 You π: _ 5, invention description (5) and finally the solder pad located on the circuit board. In order to achieve the above object, the present invention provides a method for forming a pre-solder bump on a circuit board by a transfer plate technique, the steps comprising: first providing a transfer plate having a surface having a dewetting property. It may be electrically conductive to form electroplating solder, or non-conducting to form electroless plating solder; solder is formed on the transfer plate, and then the transfer plate is placed in an organic circuit On the substrate; the organic circuit substrate is provided with a plurality of circuit layouts, and at least one solder pad is disposed thereon to serve as an alignment mark between the solder of the transfer board and the circuit board; for reflow soldering, the solder of the transfer board is then melted and It becomes a spherical solder and is finally placed on the pad of the circuit board. In order to enable the reviewing committee to have a better understanding and approval of the purpose, characteristics and efficacy of the present invention, the detailed description of the drawing is as follows: · Detailed description: In order for the reviewing committee to have the purpose, features and effects of the present invention, There is a further understanding and recognition, and the detailed description of the schema is as follows. The invention may, of course, be embodied in many different forms and is not limited to the details described in the description. The present invention relates to a method for forming a presolder bump on a circuit board by a transfer plate technique, which can form solder bumps with good uniformity without damaging the circuit board. "The second protective layer. However, the drawings of the present invention are only for the sake of simplicity, and are not depicted by the scale of the F, which does not reflect the structure of the wafer carrier.
第8頁 1272885 -案號91107396_年 月 日 修正 五、發明說明(6) 寸與特色,合先敘明。 σ月參閱圖二A所不’係本發明弟一實施例,首先提供 一轉移板(transfer plate) 100,該轉移板1〇〇包含矣 材板102( base plate)及其表面上之導電層1〇3。而在^ 電層1 0 3上覆有一包含若干開口 1 〇 5之縮錫絕緣層1 〇 $ (dewetting insulative layer)。其中所述之基材板 1 0 2係可以較硬(s t i f f)材質所構成;而所述之導電層 1 0 3為縮錫材料所組成,其不易熔解於銲錫中且對銲锡為 低黏著性,係如鋁(A1)、鉻(Cr)或導電粒子填充之'樹 月旨(conductive particles filled resin)等,另外, 該導電層1 0 3亦可選擇會熔解於銲錫中之材質,係如錫 (Sn)、金(Au)、錫鉛(Sn-Pd)或錫銅合金(Sn-C u);而所述縮錫絕緣層1 〇 4係可由有機材質、纖維強化 (fiber-reinforced)有機材質或顆粒強化(particle — reinforced)有基材質等所構成,如環氧樹脂(ep〇xy r e s i η)、聚乙醯胺(p〇 1 y i m i de)、雙順丁稀二酸醯亞 胺 /三氮阱(bismaleimide triazine-based)樹脂、氰 酯(cyanate ester) 、polybenzocyclobutane或石夕顆粒 填充之複合材料等。 其中該導電層1 0 3可扮演一晶種層(s e e d 1 a y e r)之 角色’以使得電鍍電流(p 1 a t i n g c u r r e n t)可經由該導 電層103傳導至轉移板100之邊電極(edge eiectrode) (圖中未示)而從邊電極没取之。而藉由該導電層10 3之 輔助,可以電鍍方式形成銲錫凸塊1 〇 6於轉移板1 〇 〇之各該 開口 105中’如圖三B戶斤示。Page 8 1272885 - Case No. 91107396_ Year Month Correction V. Invention Description (6) Inch and characteristics, together with the first description. Referring to Figure 2A, an embodiment of the present invention is first provided with a transfer plate 100 comprising a base plate and a conductive layer on its surface. 1〇3. On the other hand, the electric layer 110 is covered with a descaling insulative layer comprising a plurality of openings 1 〇 5 . The substrate plate 102 can be made of a stiff material; and the conductive layer 103 is composed of a tin-reducing material, which is not easily melted in the solder and has low adhesion to the solder. The properties are, for example, aluminum (A1), chromium (Cr) or conductive particles filled with conductive particles, etc., and the conductive layer 103 can also be selected to be melted in the solder material. Such as tin (Sn), gold (Au), tin-lead (Sn-Pd) or tin-copper alloy (Sn-C u); and the tin-reducing insulating layer 1 〇 4 can be made of organic material, fiber-reinforced (fiber-reinforced Organic material or particle-reinforced material, such as epoxy resin (ep〇xy resi η), polyethylamine (p〇1 yimi de), bis-butyric acid di A compound filled with a bismaleimide triazine-based resin, a cyanate ester, a polybenzocyclobutane or a Shixia particle. Wherein the conductive layer 103 can play the role of a seed layer so that a plating current can be conducted to the edge electrode of the transfer plate 100 via the conductive layer 103 (Fig. Not shown in the middle) and not taken from the side electrode. With the aid of the conductive layer 103, the solder bumps 1 〇 6 can be formed in the respective openings 105 of the transfer plate 1 ’ as shown in Fig. 3B.
第9頁 1272885 ____tli 911Q7^fi ^^日—修正 五、發明說明⑺ ' "—' 而另較佳實施者,在進行電鍍之前,可先沈積一薄 電層1 0 7於開口 1 〇 5底緣中,如圖三C所示。而該導電層、丨〇 7 係為縮錫材料所組成,其不易溶解於銲錫中且對鋒錫為低 黏著性,係如鋁(A1)、鉻(Cr)或導電粒子填充之樹= (conductive particles fHled resin)等,當然同時曰 亦可選擇會炼解於銲錫中之材質’係如錫(Sn)、金 (Au)、錫鉛(Sn-Pd)戒錫銅合金(Sn-Cu)等。 再一較佳實施者,所述之基材板1 0 2亦可直接以導電 縮錫材料所形成,係如、鉻或導電粒子填充之樹脂等, 因此導電層1 0 3也可不必形成,如圖三D所示。 然藉由一設有若干開口 1 0 5之縮錫絕緣層1 q 4之輔助, 電鏡銲锡可形成於各該開口 10 5之中,且為使形成更大之 銲錫凸塊,各該開口 1 〇 5可設計深入部分基材板1 〇 2,如圖 三E所示。 對本發明之實施例而言,不僅電鍍銲錫 (electroplating solder),且連無電鍍 銲錫(electroless plating solder)亦可以應用之。參 閱圖四A,一基材板1 0 8,可以導電或非導電材質所構成, 但仍以具縮錫特性以利進行銲錫為較佳,如前述之鋁、鉻 及樹脂等。一薄催化層1 〇 9’係如鈀(Pd)形成於該基材 板10 8之表面上,作為一無電鍍銲錫形成的催化者。而在 催化層1 0 9上形成一包含若干開口 π 1之縮錫層1 1 〇,所述 縮錫層1 1 〇係可為導電或非導電材所組成,係如鋁、鉻、 樹脂或導電粒子填充之樹脂等。最後,無電鍍銲錫則可形 成於各該開口 1 1 1中,而形成完整之轉移板Π 2。Page 9 1272885 ____tli 911Q7^fi ^^日—Amendment 5, invention description (7) ' "-' And another preferred embodiment, before electroplating, a thin electric layer can be deposited first 7 7 at the opening 1 〇 5 In the bottom edge, as shown in Figure 3C. The conductive layer and the 丨〇7 are composed of a tin-reducing material, which is not easily dissolved in the solder and has low adhesion to the front tin, such as aluminum (A1), chromium (Cr) or conductive particle-filled trees = ( Conductive particles fHled resin), etc., of course, you can also choose the material that will be refined in the solder 'Sn, Sn, Sn-Pd or Sn-Cu Wait. In a further preferred embodiment, the substrate plate 102 can also be formed directly from a conductive tin-reducing material, such as a resin filled with chromium or conductive particles, so that the conductive layer 103 does not have to be formed. As shown in Figure 3D. However, by means of a tin-containing insulating layer 1 q 4 provided with a plurality of openings 105, electron mirror solder can be formed in each of the openings 105, and in order to form larger solder bumps, the openings are formed. 1 〇5 can be designed to penetrate part of the substrate board 1 〇 2, as shown in Figure 3E. For the embodiment of the present invention, not only electroplating solder but also electroless plating solder can be applied. Referring to Fig. 4A, a substrate plate 108 can be made of a conductive or non-conductive material, but it is preferable to have a tin-reducing property for soldering, such as the aforementioned aluminum, chromium and resin. A thin catalytic layer 1 〇 9', such as palladium (Pd), is formed on the surface of the substrate 10 8 as a catalyst for the formation of an electroless solder. And forming a tin-reducing layer 1 1 包含 comprising a plurality of openings π 1 on the catalytic layer 109, the tin-reducing layer 1 1 lanthanum may be composed of conductive or non-conductive materials, such as aluminum, chromium, resin or Resin filled with conductive particles. Finally, an electroless solder can be formed in each of the openings 1 1 1 to form a complete transfer plate Π 2 .
第10頁 1272885 案號91107396_年月 日—_ 五、發明說明(8) 另一較佳實施者,該催化層1 0 9亦可在縮錫層n 〇形成 後才形成,但其只有形成於各該開口 111底邊上,如圖四β 所示。在此實施方式中,為達簡化製程之目的,該縮錫材 料,係如1&丨7〇?8卜40 0 0型,可直接選作為縮錫層11〇, 在此較簡易製程中’無電鍍銲錫可最後形成於各該開口 111 中。 以電鍍或無電鍍形成銲錫凸塊於轉移板上之後,該轉 移板係可安置於一有機電路板3 0 0上,如圖五Α所示。圖中 轉移板2 0 0係如前述以電鍵或無電鍍方式形成有銲錫凸塊 113。而在該有機電路板30 0表面上已形成有若干銲墊31〇 以及由有機絕緣層區隔之佈線電路層。所述之有機絕緣層 係由有機材料、纖維強化有機材料(f彳, 」曰 η κ I I oer-reinforced 〇rganiC material)或顆粒強化有機材料(paeticie — reinforced organic material)等,係如環氧樹脂聚 乙胺、雙順丁稀一酸驢亞胺/三氮阱樹脂、氰酯、 polybenzocyclobutane或玻璃纖維之複合材料等。而一防 焊膜 32 0 ( solder mask 1 aver)、、女接 * 分士 α 工 此積在该有機電路板3〇〇 表面’以保護電路佈局及提供絕緣作用。 接著,將該轉移板2 0 0之銲錫凸塊113及該有機電路板 3 0 0之銲墊310作接合。在迴焊(ren〇w)過程之後(亦即 以適當溫度環境使銲錫凸塊113熔化),便將轉移板2〇〇移 除之,如圖五B所*。如此,因所述鲜錫凸塊i i 3與該轉移 板2 0 0之縮錫表面接觸著,造成銲錫凸塊i丨3可被拉至該 機電路板3 0 0,而造成一新的預銲錫凸塊(Η” bump) 3 13保留在銲墊310上。 1272885 ----11107396 玍月日 五、發明說明(9) ' ^ ^—— 而另一較佳實施者,該轉移板2 0 0置於所述有機 板300^方,但卻未與銲墊310接觸到。而在迴焊步驟之 後,銲錫凸塊i丨3熔化,並形成一球狀銲錫i丨8。然因 狀曲面之球狀銲錫Π 8與轉移板2 〇 〇之縮錫表面只維持著^ 弱鍵結強度,造成所述球狀銲錫n 8便自然地座落在有^ 電路板3 0 0的銲墊3 1 0上,如圖五c所示。最後亦可形成如 同圖五β之結果,新的預銲錫凸塊3丨3便形成在有機命 3 0 0之銲墊3 1 0上。 ^ 本發明之再一實施例,所述之銲錫凸塊1 〇 6、i丨3係為 下列金屬任選混合之合金:鉛(pd)、錫(Sn)、銀 ' (Ag)、銅(Cn)、鉍(Bi)、銻(Sb)、辞(Zn)、、鎳 (Ni)、鋁(A1)、鎂(Mg)、銦(ln)、鎵(Ga)、蹄 (Te)專。另在迴焊步驟後’亦可藉一清潔步驟,例如超 音波清潔 (ultrasonic cleaning),以移除助焊劑 (f 1 ux)殘渣。 以本發明而言,所述之防焊膜3 2 0並未限制必需覆蓋 住銲墊之部分表面。如圖六所示,防焊膜3 2 1沈積在有機 電路板3 0 0之表面上,但並未覆蓋住銲墊3 1 0之任何部分。 如此,預銲錫凸塊31 3亦可以前述實施方法形成於該鮮墊 3 1 0上。 本發明之再一實施例,所述之銲墊3 1 0係非限定於任 何形狀與尺寸。如圖七所示,其僅顯示有機電路板3 〇 〇的 最上三層電路層301、302、303。圖中,有機電路板3〇〇之 表面沈積一防焊膜3 2 0,並使之圖案化以暴露出該銲墊 3 1 0。而垂直方向之電路線3 0 5係通常以所謂的疊層通孔Page 10 1272885 Case No. 91107396_年月日日—_ V. DESCRIPTION OF THE INVENTION (8) In another preferred embodiment, the catalytic layer 109 can also be formed after the formation of the tin-reducing layer n ,, but it is formed only On the bottom side of each of the openings 111, as shown in FIG. In this embodiment, for the purpose of simplifying the process, the tin-reducing material, such as 1&丨7〇?8 Bu 40 0 0 type, can be directly selected as the tin-reducing layer 11〇, in this simple process Electroless solder may be finally formed in each of the openings 111. After the solder bumps are formed on the transfer plate by electroplating or electroless plating, the transfer plate can be placed on an organic circuit board 300, as shown in FIG. In the figure, the transfer plate 200 is formed with solder bumps 113 by electric key or electroless plating as described above. On the surface of the organic circuit board 30, a plurality of pads 31 and a wiring circuit layer separated by an organic insulating layer are formed. The organic insulating layer is made of an organic material, a fiber-reinforced organic material (f彳, 曰η κ II oer-reinforced 〇rganiC material) or a pellet-reinforced organic material (paeticie-reinforced organic material), such as an epoxy resin. A composite material of polyethylamine, bis-butyric acid sulfide imine/trinitrogen-trap resin, cyanoester, polybenzocyclobutane or glass fiber. A solder mask 32 0 (solder mask 1 aver), and a female connector * α α α 此 此 此 此 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ Next, the solder bumps 113 of the transfer board 200 and the pads 310 of the organic circuit board 300 are bonded. After the reflow process (i.e., the solder bumps 113 are melted at an appropriate temperature environment), the transfer plate 2 is removed, as shown in Fig. 5B. Thus, because the tin bump ii 3 is in contact with the tinned surface of the transfer plate 200, the solder bump i丨3 can be pulled to the machine circuit board 300, resulting in a new pre- Solder bumps 3 13 remain on the pad 310. 1272885 ----11107396 玍月日五, invention description (9) ' ^ ^ - and another preferred embodiment, the transfer plate 2 0 0 is placed on the organic plate 300, but is not in contact with the pad 310. After the reflow step, the solder bump i丨3 is melted and a spherical solder i丨8 is formed. The spherical solder Π 8 of the curved surface and the shrinking tin surface of the transfer plate 2 only maintain the weak bonding strength, so that the spherical solder n 8 is naturally seated on the solder pad having the circuit board 300 3 1 0, as shown in Figure 5c. Finally, as a result of Figure 5, the new pre-solder bump 3丨3 is formed on the organic pad 3 0 0. ^ 本In still another embodiment of the invention, the solder bumps 1 〇6, i丨3 are alloys of optionally mixed metals: lead (pd), tin (Sn), silver '(Ag), copper (Cn) , 铋 (Bi), 锑 (Sb), 辞 (Z n), nickel (Ni), aluminum (A1), magnesium (Mg), indium (ln), gallium (Ga), hoof (Te). Also after the reflow step 'can also take a cleaning step, for example Ultrasonic cleaning to remove the flux (f 1 ux) residue. In the context of the present invention, the solder mask 3 2 0 does not limit the portion of the surface that must be covered by the pad. As shown, the solder resist film 3 2 1 is deposited on the surface of the organic circuit board 300, but does not cover any portion of the pad 310. Thus, the pre-solder bump 31 3 can also be formed by the foregoing method. The fresh pad 3 1 0. In another embodiment of the present invention, the pad 3 10 is not limited to any shape and size. As shown in FIG. 7 , it only shows the top of the organic circuit board 3 〇〇 Three layers of circuit layers 301, 302, and 303. In the figure, a solder resist film 320 is deposited on the surface of the organic circuit board 3, and patterned to expose the pad 3 10 0. The circuit in the vertical direction Line 3 0 5 is usually a so-called laminated via
第12頁 1272885 皇號 91107396 五、發明說明(10) (stacked via)技術完成。而預銲錫凸塊31 3亦可以前述 所提方式形成於銲墊3 1 0上。 所述之預銲錫凸塊3 1 3可以應用於覆晶(f丨丨p ch丨p) 封裝技術上。如圖八A所示,一佈設有電極銲墊4丨〇之丨^ 片4 0 0與該有機電路板3 〇 〇耦合。接著,在一迴焊溫度 下,覆晶銲錫接3 4 0在銲墊3 1 0與電極銲墊4 1 〇之間形^, 如圖八所示。 本發明之再一實施例,所述之預銲錫凸塊3丨3亦可以 應用於覆晶封裴技術上,以IC晶片上之金屬凸塊加以銲 接。如圖九A所示,一丨c晶片5 〇 〇利用在各個電極銲墊5丄〇 上所附之金屬凸塊5 2 〇與有機電路板3 〇 〇黏著。在一迴焊溫 度下,一覆晶銲錫接35〇可形成於銲墊31〇與電極銲墊5iP 之間,如圖九B所示。而所述金屬凸塊52〇可以金屬、金屬 合金或多層疊層數種金屬所組成,係如銲錫凸塊、金凸 塊銅凸塊或覆蓋著錫帽(solder cap)之銅柱等,告铁 該金屬凸塊5 2 0可以县杠打求仙於, 田…、 π ^ Λ ^ 疋任何形狀,係如釘柱狀凸塊、球形 凸塊柱狀凸塊或其他形狀等。 护成ΐ f : Ϊ , 一實施例’所述預銲錫凸塊313可應用於 = 板鲜接之搞合。%圖十A所示,一電 有銲墊61〇,及! Tm变電路板’…上並設 路板600之表面。^ ^ 6 5 0设有電極銲墊660鍵結於與電 以及其他金屬凸塊—6^塊62°形成在各該銲塾上, 述電路板6〇〇再盘有機於各該電極銲墊660上。接著所 下,形成—位於m路板灣輕合。在-迴焊溫度 ____电極〜塾6 6 0與銲墊310間之銲接3 6 0,及 第13頁 1272885 MM^nrn^ '發明說明(11)Page 12 1272885 Emperor 91107396 V. The invention (10) (stacked via) technology is completed. The pre-solder bumps 31 3 can also be formed on the pads 3 10 in the manner described above. The pre-solder bumps 3 1 3 can be applied to flip chip (f丨丨p ch丨p) packaging technology. As shown in Fig. 8A, a silicon wafer 4 is provided with an electrode pad 4, and is coupled to the organic circuit board 3. Then, at a reflow temperature, the flip-chip solder is connected to the junction between the pad 3 10 and the electrode pad 4 1 , as shown in FIG. In still another embodiment of the present invention, the pre-solder bump 3 丨 3 can also be applied to a flip chip sealing technique by soldering metal bumps on an IC wafer. As shown in Fig. 9A, a 丨c wafer 5 〇 is adhered to the organic circuit board 3 by using metal bumps 5 2 所附 attached to the respective electrode pads 5 。. At a reflow temperature, a flip-chip solder joint 35 〇 can be formed between the pad 31 〇 and the electrode pad 5 iP as shown in FIG. 9B. The metal bumps 52 can be composed of a metal, a metal alloy or a plurality of layers of metal, such as solder bumps, gold bump copper bumps or copper pillars covered with a solder cap. The metal bump 5 2 0 can be used for the county bar, the field..., π ^ Λ ^ 疋 any shape, such as a stud bump, a spherical bump column bump or other shape. The pre-solder bump 313 of an embodiment can be applied to the splicing of the slab. % Figure 10A shows that there is a solder pad 61〇, and! The surface of the circuit board 600 is disposed on the Tm variable circuit board. ^ ^ 6 5 0 is provided with electrode pads 660 bonded to the electrical and other metal bumps - 6 ^ block 62 ° formed on each of the solder pads, the circuit board 6 〇〇 re-disk organic on each of the electrode pads On 660. Then, it is formed, which is located in the m-lane bay. In-reflow temperature ____ electrode ~ 塾 6 6 0 and solder pad 310 soldering 3 6 0, and page 13 1272885 MM ^ nrn ^ 'invention description (11)
S ,於一墊31 〇與銲墊61〇間之鵪合銲接川(b〇ard older joint) ,^ 固丄 - ,7Π^ . η , ^ 如圖十Β所不。而所述之金屬凸塊6 2 0、 ^ ^ 屬、金屬合金或疊層數種金屬所組成,係 狀 等 法 ( 口、干、^ 金凸塊、銅凸塊或覆蓋著錫帽(solder c a p /之銅柱虽然該金屬凸塊β 2 0、β 7 0可以是任何形 係如釘柱狀凸&、球形凸塊、桎狀凸塊或其他形狀 Ϊ 5 f $經轉移板技術形成電路板上預銲锡凸塊之製 ,至少具有下列優點: 1) ί t =在有機電路板上形成銲錫凸塊之製程,不會 t ϋ電路板上之有機保護層,並可提供銲錫凸塊高 度之一致性。 (2) 本發明提供以棘銘也姑 ^ ^ 1上轉私板技術形成電路板上預銲錫凸塊 之方法,可減少電路板傷害。 (3) 本發明以轉移板技術形 = ^ ^ ^ ^ ^ 成鲜锡凸塊之後,再與電路 高之覆晶元件。有仏良之對準效果’完成良率 製程率高=良率,,效改善習知之 成本亦非常低&,量產性高,^發明之整體製程容易、 功效上均深富實施之進步性:顯不出本發明之目的及 曰兪市而μ私土曰 . 極具產業之利用價值,且為 目刖市面上所未見之新發明。 法中所規定之發明專利要件 ,本發明誠已符合專利 塞杳卷g奎不索、 , 戋依法提出申請’謹請 貴 審笪妥貝惠予審視,並賜准專利為* __^ Θ於有機電路板上形成預銲S, in a pad 31 〇 and the pad 61 鹌 older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older older And the metal bumps 6 2 0, ^ ^ genus, metal alloy or laminated metal, the system is the same method (mouth, dry, ^ gold bump, copper bump or covered with a tin cap (solder Cap / copper pillar Although the metal bumps β 2 0, β 7 0 may be any shape such as a stud bump & spherical bump, braided bump or other shape Ϊ 5 f $ formed by transfer plate technology The pre-solder bumps on the board have at least the following advantages: 1) ί t = the process of forming solder bumps on the organic circuit board, does not 有机 the organic protective layer on the circuit board, and can provide solder bumps The height of the block is uniform. (2) The present invention provides a method for forming a pre-solder bump on a circuit board by using a spine-turning technology to reduce board damage. (3) The present invention uses a transfer board. Technical form = ^ ^ ^ ^ ^ After the tin bump is formed, the flip chip component with the circuit is high. The alignment effect of the good result is 'the yield rate is high = the yield is good, and the cost of improving the efficiency is also very low. &, high mass production, ^ the overall process of the invention is easy, the efficacy is deep and the implementation of progress: not obvious The purpose of the invention is to use the market and the private land. It is extremely valuable for the industry, and it is a new invention that has not been seen in the market. The invention patents stipulated in the law, the invention has been in compliance with the patent Volume g 奎 不 , , , 戋 提出 提出 提出 提出 ' ' ' 提出 提出 提出 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' '
第14胃 當然’以上所述僅為本發明二禱 1272885The 14th stomach, of course, the above is only the second prayer of the present invention 1272885
第15頁 1272885 _案號 91107396_年月日_^_ 圖式簡單說明 圖式之簡單說明: 圖一 A至一 B係習知應用金屬凸塊及預銲錫凸塊之結構 示意圖。 圖二A至二B係另一習知應用銲錫凸塊之結構示意圖。 圖三A至三B係本發明實施例於轉移板上形成電鍍銲錫 凸塊之製法示意圖。 圖三C係本發明實施例於轉移板上形成電鍍銲錫凸塊 之製法之另一實施例示意圖。 圖三D係本發明實施例於轉移板上形成電鍍銲錫凸塊 之製法之再一實施例示意圖。 圖三E係本發明實施例於轉移板上形成電鍍銲錫凸塊 之製法之再一實施例示意圖。 圖四A至四B係本發明另一實施例於轉移板上形成無電 鍍銲錫凸塊之方法示意圖。 圖五A至五B係本發明實施例於經轉移板技術形成電路 板上預銲錫凸塊之製法示意圖。 圖五C係本發明實施例於經轉移板技術形成電路板上 球狀銲錫之製法示意圖。 圖六係本發明另一實施例於銲錫膜沈積在有機電路板 之表面上,並未覆蓋住銲墊之方法示意圖。 圖七係本發明另一實施例於疊層通孔技術形成電路線 之銲墊之方法示意圖。 圖八A至八B係本發明另一實施例於覆晶元件上進行電 鍍銲錫之方法示意圖。Page 15 1272885 _ Case No. 91107396_年月日日_^_ Brief description of the diagram Simple description of the diagram: Figure 1 A to A B is a schematic diagram of the structure of the application of metal bumps and pre-solder bumps. 2A to 2B are schematic views showing the structure of another conventional solder bump. 3A to 3B are schematic views showing a method of forming a plated solder bump on a transfer plate according to an embodiment of the present invention. Figure 3C is a schematic view showing another embodiment of a method of forming an electroplated solder bump on a transfer plate according to an embodiment of the present invention. Fig. 3D is a schematic view showing still another embodiment of a method for forming an electroplated solder bump on a transfer plate according to an embodiment of the present invention. Fig. 3E is a schematic view showing still another embodiment of a method for forming an electroplated solder bump on a transfer plate according to an embodiment of the present invention. 4A to 4B are schematic views showing a method of forming an electroless-plated solder bump on a transfer plate according to another embodiment of the present invention. 5A to 5B are schematic views showing a method of forming a pre-solder bump on a circuit board by a transfer plate technique according to an embodiment of the present invention. Figure 5C is a schematic view showing a method of forming a spherical solder on a circuit board by a transfer plate technique according to an embodiment of the present invention. Fig. 6 is a schematic view showing a method of depositing a solder film on the surface of an organic circuit board without covering the solder pad according to another embodiment of the present invention. Figure 7 is a schematic view showing a method of forming a pad of a circuit line in a laminated via technique according to another embodiment of the present invention. 8A to 8B are schematic views showing a method of performing electroplating soldering on a flip chip device according to another embodiment of the present invention.
第16頁 1272885 _案號 91107396_年月日__ 圖式簡單說明 圖九A至九B係本發明另一實施例於覆晶元件上進行電 鍍銲錫,以I C晶片上之金屬凸塊加以銲接之方法示意圖。 圖十A至十B係本發明另一實施例於覆晶元件上進行電 鍍銲錫,形成覆晶銲接與電路板銲接之耦合之示意圖。 圖號說明: 1, 2-覆晶元件 1 1 -金屬凸塊 12,2 2-電極銲墊 13, 23—晶片 1 4 -預銲錫凸塊 1 5,2 6-銲墊 16,24 -電路板 1 7,2 5 -銲錫接 1 8,2 7 -底膠 2卜銲錫凸塊 1 0 0,1 1 2,2 0 0 -轉移板 1 0 2,1 0 8,2 1 0 -基材板 10 3-導電層 , 1 0 4 -縮錫絕緣層 1 0 5 -開口 1 0 6 -銲錫凸塊 10 7-導電層 1 0 9 -催化層Page 16 1272885 _ Case No. 91107396 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Schematic diagram of the method. 10A to 10B are schematic views showing another embodiment of the present invention for performing electroplating solder on a flip chip device to form a coupling between flip chip soldering and board soldering. Description of the figure: 1, 2-Crystalline element 1 1 - Metal bump 12, 2 2-electrode pad 13, 23 - Wafer 1 4 - Pre-solder bump 1 5, 2 6 - Pad 16, 24 - Circuit Plate 1, 7, 2 5 - Solder connection 1, 8, 2 7 - Bottom glue 2 Bu solder bump 1 0 0, 1 1 2, 2 0 0 - Transfer plate 1 0 2, 1 0 8, 2 1 0 - Substrate Plate 10 3-conductive layer, 1 0 4 - tinned insulating layer 1 0 5 - opening 1 0 6 - solder bump 10 7 - conductive layer 1 0 9 - catalytic layer
第17頁 1272885 _案號91107396_年月日 修正 圖式簡單說明 1 1 0,2 1 2 -縮錫層 111-開口 1 1 2 -轉移板 1 1 3 -銲錫凸塊 1 1 8 -球狀銲錫 3 0 0 _有機電路板 301,302, 303-電路層 3 0 5 -電路線 3 1 0,6 1 0 -銲墊 3 1 3 -預銲錫凸塊 3 2 0,3 2 1 -防焊膜 3 4 0 -覆晶銲錫接 3 5 0 -覆晶銲錫接 3 6 0,3 7 0 -銲接 4 0 0,5 0 0,6 5 0 — I C晶片 4 1 0,5 1 0,6 6 0 -電極銲墊 5 2 0,6 2 0,6 7 0 -金屬凸塊 6 0 0 -電路板Page 17 1272885 _ Case No. 91107396_ Year and Moon Correction Schematic Description 1 1 0, 2 1 2 - Tinned Layer 111 - Opening 1 1 2 - Transfer Plate 1 1 3 - Solder Bump 1 1 8 - Spherical Solder 3 0 0 _ Organic circuit board 301, 302, 303 - Circuit layer 3 0 5 - Circuit line 3 1 0, 6 1 0 - Pad 3 1 3 - Pre-solder bump 3 2 0, 3 2 1 - Solder mask Membrane 3 4 0 - flip-chip solder connection 3 50 - flip-chip solder connection 3 6 0, 3 7 0 - solder 4 0 0, 5 0 0, 6 5 0 - IC chip 4 1 0, 5 1 0, 6 6 0 - electrode pad 5 2 0,6 2 0,6 7 0 -metal bump 6 0 0 -circuit board
第18頁Page 18
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91107396A TWI272885B (en) | 2002-04-12 | 2002-04-12 | Method for forming presolder bump on circuit board by translate plate technique |
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| Application Number | Priority Date | Filing Date | Title |
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| TW91107396A TWI272885B (en) | 2002-04-12 | 2002-04-12 | Method for forming presolder bump on circuit board by translate plate technique |
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