1271835 九、發明說明： 【發明所屬之技術領域】 本發明係關於發光二極體，尤其是有關於高功率發光二 極體晶片的一種封裝結構及其製造方法。 【先前技術】 高功率（high P〇wer)發光二極體係近年半導體產業快速 發展的一環。有關高功率發光二極體晶片的封裝，其最重要 的考量便在於如何妥善處理發光二極體晶片因高功率所產生 的高溫與高熱，以避免其性能與壽命受到影響。 第la圖所示係-種習知的發光二極體晶片封裝結構的側 視圖。如第U圖所示，發光二極體晶片（chip或die) 16係 設置於以BT樹脂（BismaleimideTriazineResin)製成的基板 19上。二極體晶片16的電極係以導線（bonding wire) η與 基板19上預先設置好、對外提供電氣連結的銅箔ΐ5銜接。 二極體晶片i6的周圍環設有反射鏡14，最後再以樹脂口將 二極體晶片丨6以及導線13封固起來。此封裝方式的優點是 生產上適合大量發光二極體晶片的封裝，因此生產成本低。 缺點疋樹脂不是良好的導熱材料，所以晶片16所產生的 同熱主要需要倚賴微薄的銅猪15發散，這種電氣通道和散熱 通運合為一體的封裝方式並不適用高功率的發光二極體晶 片。 5 1271835 美國專利6,274,924號提出一種電氣通道和散熱通道分 離的高功率發光二極體晶片的封裝結構。為方便解說起見， 美國專利6,274,924號的代表圖在此引用為本說明書的第lb 圖。如第ib圖所示，此結構主要是將金屬的導線架（lead frame) 12封固於由絕緣耐高溫塑膠所構成的膠體中。發光二 極體日日片16係δ又置於導熱但電氣絕緣的次載具（subm〇unt) 上一者再同5又置於一金屬的散熱（heat sinking)元件 1〇 (通常係一銅柱）上。散熱元件10上可設置一反射鏡14。 政熱元件10連同二極體晶片16、次載具18再一起穿置於膠 體中預留的空間中。二極體晶片16的電極係以導線（未圖示） 與導線架12連接。最後膠體之上再以預先成型的透明膠質透 光性保護鏡罩20覆蓋，其中並注以樹脂（未圖示）以保護二 極體晶片16與導線。 吴國專利6,274,924號所提出的結構，因為分離了電氣通 逼和散熱通道而達成相#有效的散熱，但是綜合以上的製程 來看，關專利6,274,924號的製程相當繁複，生產成本不易 P牛低。而且’其中像是包覆導線架12的膠體、與透光性保護 鏡單2〇都需要關以_射出成㈣方式事先製成，開模的 費用固然疋-筆不小的負擔，但主要的問題是生產上的彈性 低’例如要在第1b圖所示的結構中封裝一個以上的二極體晶 片16，則導線架12勢必要重新開模製作。 6 1-271835 【發明内容】 因此’本發明之主要目的在提供—種高功率發光二極體 晶片的封裝結構及其製造方法，一 万面以兀全分離電氣通道 和散熱通道的方式來達到極佳的散熱效率，另—方面製程上1271835 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode, and more particularly to a package structure for a high-power light-emitting diode wafer and a method of fabricating the same. [Prior Art] High-power (high P〇wer) light-emitting diode system has been rapidly developed in the semiconductor industry in recent years. The most important consideration for the packaging of high-power LED chips is how to properly handle the high temperature and high heat generated by the high-power LED chip to avoid its performance and life. Figure la is a side view of a conventional light emitting diode package structure. As shown in Fig. U, a light-emitting diode chip (chip or die) 16 is provided on a substrate 19 made of BT resin (Bismaleimide Triazine Resin). The electrode of the diode wafer 16 is bonded to a copper foil 5 which is provided in advance on the substrate 19 and which is electrically connected to the outside by a bonding wire η. A mirror 14 is disposed around the circumference of the diode wafer i6, and finally the diode wafer 6 and the wire 13 are sealed by a resin port. The advantage of this package is that it is manufactured in a package suitable for a large number of light-emitting diode chips, so the production cost is low. Disadvantages: Resin is not a good thermal conductive material, so the same heat generated by the wafer 16 mainly depends on the thin copper pig 15 divergence. The combination of the electrical passage and the heat dissipation is not suitable for the high-power LED. Wafer. 5 1271835 U.S. Patent No. 6,274,924 discloses a package structure for a high power light emitting diode wafer separated by an electrical channel and a heat dissipation channel. For the convenience of the description, the representative figure of U.S. Patent No. 6,274,924 is incorporated herein by reference. As shown in the figure ib, the structure is mainly to seal a metal lead frame 12 in a colloid composed of an insulating high temperature resistant plastic. The light-emitting diode Japanese 16-series δ is placed on the heat-conducting but electrically-insulated sub-carrier (subm〇unt). The other one is placed in a metal heat sinking component 1 (usually one) On the copper column). A mirror 14 can be disposed on the heat dissipating component 10. The thermal element 10, together with the diode wafer 16 and the sub-carrier 18, is placed together in a space reserved in the gel. The electrode of the diode wafer 16 is connected to the lead frame 12 by a wire (not shown). The final gel is then overlaid with a pre-formed clear colloidal light-shielding protective cover 20 encased with a resin (not shown) to protect the diode wafer 16 and the wires. The structure proposed by Wu Guofang No. 6,274,924, because of the separation of the electrical communication and the heat dissipation channel, achieves the effective heat dissipation of the phase. However, in view of the above process, the process of the patent No. 6,274,924 is quite complicated, and the production cost is not easy. . Moreover, 'there is a kind of colloid that covers the lead frame 12, and the translucent protective mirror single 2〇 needs to be closed and made in advance (4). The cost of opening the mold is not a burden, but mainly The problem is that the flexibility in production is low. For example, if more than one diode wafer 16 is to be packaged in the structure shown in Fig. 1b, the lead frame 12 is likely to be re-opened. 6 1-271835 SUMMARY OF THE INVENTION Therefore, the main purpose of the present invention is to provide a package structure for a high-power light-emitting diode chip and a method for fabricating the same, and the 10,000-sided surface is formed by completely separating the electrical channel and the heat dissipation channel. Excellent heat dissipation efficiency, on the other side of the process
包含底座、反射板、發光二極體晶片、及連接發光二極體晶 片的稷數條導線、以及保護發光二極體晶片與導線的透光性 填充物或透光性保護鏡罩。底座是由金屬材質與絕緣材料所 -體成型構成而具有1平的形狀。該金屬材料分別構成— 個與底座周緣保持適當距離、由底座上表面、The utility model comprises a base, a reflector, a light-emitting diode chip, a plurality of wires connected to the light-emitting diode chip, and a light-transmissive filler or a light-transmitting protective lens cover for protecting the LED chip and the wire. The base is formed of a metal material and an insulating material and has a flat shape. The metal materials are respectively formed to be at an appropriate distance from the periphery of the base, from the upper surface of the base,
又此大m生產以降低生產成本，以解決前述習知的封裝結構 在散熱與製程上的不盡理想之處。 ^ 本發明所提出的高功率發光二極體晶片封裝結構，至少 以及底座下表 面或側面分別透出的散熱座；以及複數個位於該散熱座四周 適田位置Φ底座上表面、以及底座下表面或側面分別透出 的電極。該絕緣材料位於該散熱座與電極之間，致使散熱座 與任一電極、以及任二電極之間是絕緣黏合的。 所封衣的务光一極體晶片即黏固於散熱座之上表面，發 光二極體晶片的正負電極則以該導線分別連接到底座的上表 面電極上。反射板是以一適當的接著方式固定於底座之上。 反射板具有上下貝通的穿孔，以暴露出底座散熱座上的發 光二極體晶片，致使發光二極體晶片所發出的光線得以向 上、向外射出。反射板是以高反射率的金屬材質構成，或是 7 1271835 由非金屬材質構成但於穿孔壁面塗佈有高反射率的薄膜。穿 孔内填充有由樹脂或類似的透明材料所構成的透光性填充物 或透光性保護鏡罩形成光通道，同時藉以保護發光二極體晶 片與導線。 此封裝結構由於底座結構單純且採一體成型的方式，因 此適合大量的生產製造。本發明所提出的生產方法，係以一 大片金屬板同時製作複數個發光二極體晶片的封裝結構單元 的底座。該金屬板是以一次蝕刻或二面分別蝕刻的方式一次 形成這些封裝結構單元底座的散熱座與電極圖案，然後在散 熱座與電極間填充絕緣材料，在底座上面黏合反射板，之後 在散熱座上表面固晶、用導線將晶片與底座上表面電極連 結、在反射板穿孔内填充透光性材料，最後再將各個封裝結 構單元切割分離開來。 茲配合所附圖示、實施例之詳細說明及申請專利範圍， 將上述及本發明之其他目的與優點詳述於後。然而，當可了 解所附圖示純係為解說本發明之精神而設，不當視為本發明 範疇之定義。有關本發明範疇之定義，請參照所附之申請專 利範圍。 【實施方式】 弟2a、2b圖所示係本發明一第一實施例的側視剖面圖 與結構分解圖。如圖所示，本實施例的高功率發光二極體晶 1271835 片封裝結構，至少包含底座1 00、反射板1 i 〇、發光二極體晶 片150、複數條導線120、以及透光性填充物13〇。底座1〇〇 是由散熱座102、複數個電極104、與絕緣物106所一體成型 構成而具有一扁平的形狀。散熱座1 02與電極1 都是由高 導電性與高導熱性的金屬材料所構成。絕緣物1〇6則是由樹 脂或類似的絕緣材料所構成。This large m production reduces the production cost to solve the above-mentioned conventional package structure in terms of heat dissipation and process. The high-power light-emitting diode chip package structure proposed by the present invention, at least the heat sink seat respectively exposed to the lower surface or the side surface of the base; and a plurality of upper surfaces of the base and the lower surface of the base located at an appropriate position around the heat sink Or electrodes that are separately permeable on the sides. The insulating material is located between the heat sink and the electrode such that the heat sink is insulatively bonded to any of the electrodes and any two electrodes. The sealed light-emitting one-pole wafer is adhered to the upper surface of the heat sink, and the positive and negative electrodes of the light-emitting diode wafer are respectively connected to the upper surface electrode of the base. The reflector is secured to the base in a suitable manner. The reflector has perforations of the upper and lower pass-through to expose the light-emitting diode wafer on the base heat sink, so that the light emitted by the light-emitting diode wafer can be emitted upwards and outwards. The reflector is made of a high-reflectivity metal material, or 7 1271835 is made of a non-metallic material but coated with a high reflectivity on the perforated wall. The through hole is filled with a light-transmitting filler made of a resin or a similar transparent material or a light-transmitting protective lens cover to form a light path, thereby protecting the light-emitting diode chip and the wire. This package structure is suitable for mass production because the base structure is simple and integrated. The production method proposed by the present invention is to simultaneously form a base of a package structure unit of a plurality of light-emitting diode chips by using a large number of metal plates. The metal plate forms the heat sink and the electrode pattern of the base of the package structure unit in one etching or two sides, and then fills the insulating material between the heat sink and the electrode, and adheres the reflector on the base, and then the heat sink. The upper surface is crystallized, the wafer is connected to the surface electrode of the base by a wire, the light transmissive material is filled in the perforation of the reflector, and finally the package structure units are cut and separated. The above and other objects and advantages of the present invention will be described in detail with reference to the accompanying drawings and claims. However, it is to be understood that the appended drawings are merely illustrative of the scope of the invention. For the definition of the scope of the invention, please refer to the attached patent application. [Embodiment] Figs. 2a and 2b are a side sectional view and a structural exploded view of a first embodiment of the present invention. As shown in the figure, the high power LED crystal 1271835 package structure of the embodiment includes at least a base 100, a reflector 1 i , a light emitting diode 150, a plurality of wires 120, and a light transmissive filling. 13 〇. The base 1 〇〇 is formed by integrally forming the heat sink 102, the plurality of electrodes 104, and the insulator 106, and has a flat shape. Both the heat sink 102 and the electrode 1 are made of a metal material having high conductivity and high thermal conductivity. Insulator 1〇6 is made of resin or similar insulating material.
政熱座102係位於底座1 〇〇的内部，與底座丨〇〇的周緣 保持適^距離，並由底座100的上表面透出、以及底座1〇〇 的下表面及側面二者至少其中之一分別透出。在本實施例 裡，散熱座102並向外側延伸而由底座1〇〇的其他位置透出The political hotspot 102 is located inside the base 1 ,, and is at a proper distance from the periphery of the base cymbal, and is transparently formed by the upper surface of the base 100 and at least the lower surface and the side surface of the base 1 〇〇 One separately revealed. In the present embodiment, the heat sink 102 extends outwardly and is exposed from other locations of the base 1
以增加散熱的面積。請注意到第2&、沘圖所示的散熱座ι〇2 形狀僅屬例示，而非僅以此形狀為限。電極1()4則位於散熱 座102四周適當位置、並由底座丨⑼上表面透出、以及下表 面及側面二者至少其中-分別透出，以提供二極體晶片15〇 對外的電氣連接。同樣地，第2a、2b圖所示的電極1〇4形狀 僅屬例示，而非僅以此雜為限。原則上，在本實施例的單 晶封裝的情形下，電極1G4的數目為二，而在其他提供多晶 封裝的實施例中，電極104的數目為晶片數的二倍。底座的 其他部分則由絕緣物1G6填充。絕緣物⑽因此位於散熱座 1 〇2與任一電極1 〇4、以及 有關底座100的製作的方 102與電極104之間，致使散熱座 任一電極104之間是絕緣黏合的 9 1271835 • 式會於後文詳加解釋。 • · 反射板11()具有一扁平板狀，其内部適當位置處具有一 _ 適當口徑且上下貫通的穿孔。反射板u〇是以高反射率的金 屬材質（例如鋁）構成，或是由樹脂或類似的絕緣材質構成 但於穿孔壁面施以白塗裝、或塗佈有高反射率的薄膜（例如 鍍銀）。反射板110是以適當的接著劑160與底座1〇〇黏連。 當反射板110是以金屬材質構成時，此接著劑16〇並提供反 射板110與底座100的電極1〇4之間的電氣絕緣。反射板 的牙孔的位置與口徑係被適當的設置，以在與底座100黏連 之後，可以暴露出底座100上表面的散熱座1〇2的透出用於 固晶部分與每個電極104的透出部分的至少夠用於連線部分 面和。因此當發光二極體晶片15〇置於散熱座1〇2所透出的 上表面時，其所發出的光線得經由穿孔向上、向外射出。請 注意到在本實施例裡，穿孔具有一圓形的口徑且係上闊下 狹，然此僅屬例示，穿孔的幾何形狀非以此為限。 發光二極體晶片150係黏固於散熱座1〇2之上表面，發 光二極體晶片150的正負電極則以導線12〇分別連接到底座 100的電極1G4上表面，藉此完全分離電氣通道和散熱通道 來達到極㈣散熱效果。反射板11G的穿㈣填充有由_ 或類似的透明材料所構成的透光性填充物13〇，以封固、保 護發光二極體晶片150、導線12〇等封裝結構内的元件。在 1271835 本貫施例裡’填充物13G是完全填滿反射板iiq的穿孔，但 在如第2e圖所示的第二實施例，也可以採用如圖所示的透光 性保4鏡罩17G將發光二極體晶片15G、導線12()等元件保 4起來或其它形狀的透光性保護鏡罩（如凸型鏡罩）等。 第2d、2e、2f圖所示係本發明的第三、四、五實施例。 如第2d圖所示的第三實施例，散熱貞102的上表面與發光二 和體曰曰片150之間可以形成一個微凹的反射鏡面。反射 3 了以疋由具熱傳導性的金屬或金屬化合物（如銀、 氧化鋁等）的反射材料、或是由不具熱傳導性的反射材 料所塗佈形成’以提高發光二極體晶片⑽封裝後的亮度。 第2e圖所示的第四實施例主要是針對以激發螢光體的方式產 生白光的應用。在這個實施例裡，藍光的發光二極體晶片15〇 是包覆在黃光螢光體1G5内，螢光體105被激發後產生的黃 光與用於激發的藍光互補而產生二波長的白光。或者，紫外 線的發光二極體晶# 15〇是包覆在含有紅、，彔、藍三色的螢 光體1〇5内，而由螢光體105激發後產生的三色光配成三波 長的白光。第2f圖所示的第五實施例則是第三、四實施例的 綜合貫施。有關反射鏡面1〇3、以及螢光體1〇5激發的技術 已、、二有。午多相關的發明與研究，而非僅限於前述的作法。 第3a、3b圖所示係本發明實施於雙晶與三晶封裝的實施 例的底座1〇〇與封裝完成的透視圖。如圖所示，本發明所提 1271835 出的封裝結構可以很容易用於封裝更多數目的發光二極體晶 片150,唯一的差別主要僅在於在底座100形成適當數目與 適當位置的電極104。如圖所示的多晶封裝非常適合用來達 成各種色光的組合，以第3b圖所示的三晶封裝為例，這三個 發光二極體晶片150可以分別是紅、綠、藍光的發光二極體 晶片150，而這三種色光的混光就形成了白光。綜合前述的 實施例，可以很清楚的看出本發明所提出的封裝結構，可以 適用於各種色光的發光二極體晶片150、不設限發光二極體 晶片150的顆數、並能達成各種單光與全彩的色光組合。 第4a〜4g圖所示係本發明的製作方法一實施例的各個步 驟。首先，如第4a圖所示，準備好具高導電性與高導熱性的 大片金屬板190,以後續用來同時形成複數個封裝結構單元 200的底座100,形成後的這些單元底座100係呈矩陣式的排 列，單元底座100彼此之間是相互連接或與邊框180連接。 形成方法是利用一般蝕刻與機械加工的方式將各個封裝結構 單元底座100裡未來來要填充絕緣物106的部分蝕刻掉，只 留下散熱座102與電極104，其結果如第4b圖所示，接著再 將蝕刻掉的部分填充以絕緣物106即完成了複數個封裝結構 單元200的底座100的製作，其結果如第4c圖所示。 視單元底座100裡散熱座102與電極104的形狀與複雜 程度，前述的蝕刻與機械加工可以對金屬板190的上下兩主 12 1271835 要表面一起進行，一次就完成所有單元底座100裡散熱座102 與電極104圖案的形成，然後再進行絕緣物106充填黏合。 或者，如果單元底座100裡散熱座102與電極104的形狀相 當複雜的話，可以先對金屬板190的一主要表面進行蝕刻與 絕緣物106的填充，然後再對金屬板190的另一主要表面進 行蝕刻與絕緣物106的填充，即可完成所有單元底座100的 製作。 接下來，如第4d圖所示，一個預先準備好的、包含有多 個反射板110的板體210,以適當的接著劑（未圖示）與第 4c圖的成品黏著。然後，如第4e圖所示，對各個封裝結構單 元200分別進行發光二極體晶片150的固晶與打線。完成所 有晶片150的固晶與打線後，即以透光性填充物130如樹脂 填入各個單元反射板110的穿孔裡將各個封裝結構單元200 封固起來，其結果如第4f圖所示。最後，如第4g圖所示， 將各個封裝結構單元200切割分離開來。 藉由以上較佳具體實施例之詳述，係希望能更加清楚描 述本創作之特徵與精神，而並非以上述所揭露的較佳具體實 施例來對本創作之範_加以限制。相反地，其目的是希望能 涵蓋各種改變及具相等性的安排於本創作所欲申請之專利範 圍的範疇内。 13 !271835 【圖式簡單說明】 第1 a圖所示係一種習知的發光二 圖〇 極體晶片封裝結構的側視 第ib圖所示顧國專利6,274,924㈣代表圖。 第2a圖所示係本發明的封i结構—第—實施例的側視剖面 圖 第2b圖所示係本發明的封裝結構一第一 圖。 實施例的結構分解 第2c圖所示係本發明的封i结構—第二實施㈣側視剖面 圖 第2d圖所示係本發明的封裝結構H施㈣㈣剖面 圖。 第2e圖所示係本發明的封裝結構一第 圖。 第2f圖所示係本發明的封裴結構一第 圖0 四實施例的側視剖面 五實施例的侧視剖面 弟3a圖所示係本發明實施於雔 %又日日封I的一實施例的底座與透 視圖。 第3b圖所示係本發明實施於三 透視圖 晶封裝的一實施例的底座與 第4a〜4g圖所示係本發明的製作方法 貫施例的各個步驟 14 •1271835 【主要元件符號說明】 10 散熱元件 12 導線架 13 導線 14 反射鏡 15 銅f| 16 二極體晶片 17 樹脂 18 次載具 20 透光性保護鏡罩 100 底座 102 散熱座 103 反射鏡面 104 電極 105 螢光體 106 絕緣物 110 反射板 120 導線 130 透光性填充物 150 二極體晶片 160 接著劑 170 透光性保護鏡罩 180 邊框 190 金屬板 200 封裝結構單元 210 反射板板體 15To increase the area of heat dissipation. Please note that the shape of the heat sink ι2 shown in the second & 沘 diagram is only an illustration, not limited to this shape. The electrode 1 () 4 is located at a suitable position around the heat sink 102, and is exposed by the upper surface of the base cymbal (9), and at least the lower surface and the side surface thereof are respectively exposed to provide external electrical connection of the diode wafer 15 . Similarly, the shape of the electrode 1〇4 shown in Figs. 2a and 2b is merely illustrative, and not limited thereto. In principle, in the case of the single crystal package of the present embodiment, the number of electrodes 1G4 is two, and in other embodiments providing a polycrystalline package, the number of electrodes 104 is twice the number of wafers. The other part of the base is filled with insulation 1G6. The insulator (10) is thus located between the heat sink 1 〇 2 and any of the electrodes 1 〇 4, and between the fabricated side 102 and the electrode 104 of the base 100, such that any of the electrodes 104 of the heat sink is insulatively bonded 9 1271835. It will be explained in detail later. • The reflector 11 () has a flat plate shape with a proper diameter inside and a through hole penetrating at an appropriate position. The reflector u〇 is made of a high-reflectivity metal material (for example, aluminum), or is made of a resin or a similar insulating material, but is white-coated on the perforated wall surface or coated with a film having high reflectance (for example, plating). silver). The reflector 110 is adhered to the base 1 by a suitable adhesive 160. When the reflecting plate 110 is made of a metal material, the adhesive 16 is provided and electrically insulated between the reflecting plate 110 and the electrode 1〇4 of the base 100. The position and the diameter of the hole of the reflector are appropriately set to expose the heat sink 1 2 of the upper surface of the base 100 for the solid crystal portion and each electrode 104 after being adhered to the base 100. The permeable portion is at least sufficient for the partial portion of the wire. Therefore, when the light-emitting diode chip 15 is placed on the upper surface of the heat sink 1 2, the light emitted therefrom is emitted upward and outward through the perforations. It should be noted that in the present embodiment, the perforations have a circular caliber and are broad and narrow, but this is merely an illustration, and the geometry of the perforations is not limited thereto. The LED chip 150 is adhered to the upper surface of the heat sink 1〇2, and the positive and negative electrodes of the LED chip 150 are respectively connected to the upper surface of the electrode 1G4 of the base 100 by wires 12, thereby completely separating the electrical channels. And the heat dissipation channel to achieve the extreme (four) heat dissipation effect. The transmissive plate 11G is filled with a translucent filler 13 made of _ or a similar transparent material to enclose and protect components in the package structure such as the LED chip 150 and the wire 12 . In the 1271835 embodiment, the 'filler 13G is a perforation that completely fills the reflector iiq, but in the second embodiment as shown in Fig. 2e, a translucent protective mirror cover as shown in the figure can also be used. The 17G protects the components such as the light-emitting diode chip 15G and the wire 12 () from a light-transmitting protective lens cover (such as a convex mirror cover) of another shape. Figures 2d, 2e, and 2f show the third, fourth, and fifth embodiments of the present invention. As in the third embodiment shown in Fig. 2d, a dimple mirror surface may be formed between the upper surface of the heat sink 102 and the light emitting diode and the body sheet 150. The reflection 3 is formed by coating a reflective material of a thermally conductive metal or metal compound (such as silver, aluminum oxide, etc.) or a reflective material having no thermal conductivity to improve the package of the light emitting diode (10). Brightness. The fourth embodiment shown in Fig. 2e is mainly directed to an application for generating white light by exciting a phosphor. In this embodiment, the blue light emitting diode chip 15 is coated in the yellow phosphor 1G5, and the yellow light generated by the phosphor 105 is excited to complement the blue light for excitation to generate two wavelengths of white light. Alternatively, the ultraviolet light-emitting diode crystal #15〇 is coated in the phosphor 1〇5 containing red, 彔, and blue colors, and the three-color light generated by the phosphor 105 is combined to form three wavelengths. White light. The fifth embodiment shown in Fig. 2f is an integrated embodiment of the third and fourth embodiments. Techniques relating to the mirror surface 1〇3 and the excitation of the phosphor 1〇5 have been made. More relevant inventions and research in the afternoon, not limited to the aforementioned practices. Figures 3a and 3b show perspective views of the base 1 and package of the embodiment of the present invention implemented in a dual and triple package. As shown, the package structure of the 1271835 of the present invention can be easily used to package a greater number of LED arrays 150, the only difference being primarily in forming the appropriate number and position of electrodes 104 in the base 100. The polycrystalline package as shown in the figure is very suitable for achieving a combination of various color lights. Taking the three-crystal package shown in FIG. 3b as an example, the three LED chips 150 can be red, green and blue light respectively. The diode wafer 150, and the mixed light of the three color lights form white light. According to the foregoing embodiments, it can be clearly seen that the package structure proposed by the present invention can be applied to the light-emitting diode wafers 150 of various color lights, the number of the light-emitting diode chips 150 not limited, and various types can be achieved. Single light combined with full color light. Figures 4a to 4g show various steps of an embodiment of the manufacturing method of the present invention. First, as shown in FIG. 4a, a large metal plate 190 having high conductivity and high thermal conductivity is prepared for subsequent formation of a plurality of bases 100 of a plurality of package structure units 200, and the formed unit bases 100 are formed. In a matrix arrangement, the unit bases 100 are connected to each other or to the bezel 180. The forming method is to etch away the portion of the package structure unit base 100 to be filled with the insulator 106 in a manner of general etching and machining, leaving only the heat sink 102 and the electrode 104, and the result is as shown in FIG. 4b. Then, the etched portion is filled with the insulator 106 to complete the fabrication of the pedestal 100 of the plurality of package structure units 200, and the result is as shown in Fig. 4c. Depending on the shape and complexity of the heat sink 102 and the electrode 104 in the unit base 100, the foregoing etching and machining can be performed on the upper and lower surfaces of the metal plate 190, and the heat sink 102 in all the unit bases 100 is completed at one time. The pattern is formed with the electrode 104, and then the insulator 106 is filled and bonded. Alternatively, if the shape of the heat sink 102 and the electrode 104 in the unit base 100 is quite complicated, a main surface of the metal plate 190 may be etched and filled with the insulator 106, and then the other main surface of the metal plate 190 may be further The fabrication of all of the unit bases 100 can be accomplished by etching and filling of the insulator 106. Next, as shown in Fig. 4d, a pre-prepared plate body 210 including a plurality of reflecting plates 110 is adhered to the finished product of Fig. 4c with a suitable adhesive (not shown). Then, as shown in Fig. 4e, the solid crystal and the wiring of the light-emitting diode wafer 150 are respectively performed for each of the package structure units 200. After the bonding and bonding of all the wafers 150 are completed, the respective package structure units 200 are sealed by filling the perforations of the respective unit reflection plates 110 with a light-transmissive filler 130 such as a resin, and the result is as shown in Fig. 4f. Finally, as shown in Fig. 4g, the respective package structure units 200 are cut and separated. The features and spirit of the present invention are more clearly described in the above detailed description of the preferred embodiments, and are not intended to limit the scope of the present invention. On the contrary, the purpose is to cover a variety of changes and equivalence arrangements within the scope of the patent application to which this creative is intended. 13 !271835 [Simple description of the diagram] Figure 1 a shows a conventional illumination diagram. Figure 2-4 shows the side view of the polar body chip package structure. Figure ib shows the representative of the company's patent 6,274,924 (four). Fig. 2a is a side elevational cross-sectional view of the first embodiment of the present invention. Fig. 2b is a first view of the package structure of the present invention. Structural Decomposition of Embodiments Fig. 2c is a cross-sectional view showing a structure of the present invention - a second embodiment (four). Fig. 2d is a cross-sectional view showing a package structure H (4) and (4) of the present invention. Fig. 2e is a view showing a package structure of the present invention. Figure 2f is a side view of the fifth embodiment of the present invention. The side view of the fifth embodiment is shown in the side view. The third embodiment of the present invention is implemented in the embodiment of the present invention. The base and perspective of the example. Figure 3b shows the base of the embodiment of the present invention implemented in a three-dimensional perspective crystal package and the steps 4a to 4g are shown in the respective steps of the manufacturing method of the present invention. 14 • 1271835 [Description of main component symbols] 10 Heat Dissipation Components 12 Lead Frame 13 Conductor 14 Mirror 15 Copper f| 16 Diode Wafer 17 Resin 18 Substation 20 Transparency Shield 100 Base 102 Heat Sink 103 Mirror Surface 104 Electrode 105 Phosphor 106 Insulation 110 Reflector 120 Conductor 130 Translucent Filler 150 Diode Wafer 160 Adhesive 170 Translucent Protective Shield 180 Frame 190 Metal Plate 200 Package Structure Unit 210 Reflector Plate Body 15