TWI267201B - Sidewall SONOS gate structure with dual-thickness oxide and method of fabricating the same - Google Patents
Sidewall SONOS gate structure with dual-thickness oxide and method of fabricating the sameInfo
- Publication number
- TWI267201B TWI267201B TW095102589A TW95102589A TWI267201B TW I267201 B TWI267201 B TW I267201B TW 095102589 A TW095102589 A TW 095102589A TW 95102589 A TW95102589 A TW 95102589A TW I267201 B TWI267201 B TW I267201B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide
- fabricating
- dual
- gate structure
- same
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 125000006850 spacer group Chemical group 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
- H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
- H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/243,165 US20070075385A1 (en) | 2005-10-04 | 2005-10-04 | Sidewall SONOS gate structure with dual-thickness oxide and method of fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI267201B true TWI267201B (en) | 2006-11-21 |
| TW200715573A TW200715573A (en) | 2007-04-16 |
Family
ID=37901091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095102589A TWI267201B (en) | 2005-10-04 | 2006-01-24 | Sidewall SONOS gate structure with dual-thickness oxide and method of fabricating the same |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20070075385A1 (zh) |
| CN (1) | CN1945851A (zh) |
| TW (1) | TWI267201B (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101005638B1 (ko) * | 2006-12-04 | 2011-01-05 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 및 제조방법 |
| CN101459139B (zh) * | 2007-12-10 | 2010-11-03 | 上海华虹Nec电子有限公司 | 电荷囚禁器件的制作工艺方法 |
| CN101483154B (zh) * | 2008-01-07 | 2010-08-25 | 中芯国际集成电路制造(上海)有限公司 | 一种双栅氧器件的栅极侧墙制造方法 |
| US20120146175A1 (en) * | 2010-12-09 | 2012-06-14 | Nicolas Loubet | Insulating region for a semiconductor substrate |
| US8796147B2 (en) | 2010-12-17 | 2014-08-05 | Stmicroelectronics, Inc. | Layer formation with reduced channel loss |
| CN103165615B (zh) * | 2011-12-19 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | 分栅快闪存储器及其形成方法 |
| US9159579B2 (en) * | 2013-10-25 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography using multilayer spacer for reduced spacer footing |
| CN104934306B (zh) * | 2014-03-18 | 2018-09-25 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件间隙壁的制造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4620334B2 (ja) * | 2003-05-20 | 2011-01-26 | シャープ株式会社 | 半導体記憶装置、半導体装置及びそれらを備える携帯電子機器、並びにｉｃカード |
| US7151293B1 (en) * | 2004-08-27 | 2006-12-19 | Spansion, Llc | SONOS memory with inversion bit-lines |
-
2005
- 2005-10-04 US US11/243,165 patent/US20070075385A1/en not_active Abandoned
-
2006
- 2006-01-24 TW TW095102589A patent/TWI267201B/zh not_active IP Right Cessation
- 2006-03-20 CN CNA2006100649648A patent/CN1945851A/zh active Pending
-
2009
- 2009-12-29 US US12/648,598 patent/US8653576B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20100136779A1 (en) | 2010-06-03 |
| CN1945851A (zh) | 2007-04-11 |
| US20070075385A1 (en) | 2007-04-05 |
| US8653576B2 (en) | 2014-02-18 |
| TW200715573A (en) | 2007-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |