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TWI265639B - Air gap interconnect structure and method thereof - Google Patents

Air gap interconnect structure and method thereof

Info

Publication number
TWI265639B
TWI265639B TW094124791A TW94124791A TWI265639B TW I265639 B TWI265639 B TW I265639B TW 094124791 A TW094124791 A TW 094124791A TW 94124791 A TW94124791 A TW 94124791A TW I265639 B TWI265639 B TW I265639B
Authority
TW
Taiwan
Prior art keywords
layer
stakes
openings
barrier layer
hard mask
Prior art date
Application number
TW094124791A
Other languages
English (en)
Other versions
TW200605376A (en
Inventor
Yi-Nien Su
Jyu-Horng Shieh
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW200605376A publication Critical patent/TW200605376A/zh
Application granted granted Critical
Publication of TWI265639B publication Critical patent/TWI265639B/zh

Links

Classifications

    • H10W20/072—
    • H10W20/46—
    • H10W20/47—
    • H10W20/495—
    • H10W20/4403—
    • H10W20/4405—
    • H10W20/4421—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094124791A 2004-07-20 2005-07-20 Air gap interconnect structure and method thereof TWI265639B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/894,024 US7094689B2 (en) 2004-07-20 2004-07-20 Air gap interconnect structure and method thereof

Publications (2)

Publication Number Publication Date
TW200605376A TW200605376A (en) 2006-02-01
TWI265639B true TWI265639B (en) 2006-11-01

Family

ID=35657791

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094124791A TWI265639B (en) 2004-07-20 2005-07-20 Air gap interconnect structure and method thereof

Country Status (2)

Country Link
US (2) US7094689B2 (zh)
TW (1) TWI265639B (zh)

Families Citing this family (33)

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US7560375B2 (en) * 2004-09-30 2009-07-14 International Business Machines Corporation Gas dielectric structure forming methods
US8083890B2 (en) * 2005-09-27 2011-12-27 Lam Research Corporation Gas modulation to control edge exclusion in a bevel edge etching plasma chamber
US7396757B2 (en) 2006-07-11 2008-07-08 International Business Machines Corporation Interconnect structure with dielectric air gaps
US7718542B2 (en) * 2006-08-25 2010-05-18 Lam Research Corporation Low-k damage avoidance during bevel etch processing
US7973409B2 (en) 2007-01-22 2011-07-05 International Business Machines Corporation Hybrid interconnect structure for performance improvement and reliability enhancement
WO2008091900A1 (en) * 2007-01-26 2008-07-31 Applied Materials, Inc. Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild
CN101595559B (zh) * 2007-01-29 2012-01-04 应用材料股份有限公司 形成镶嵌结构的方法
US8193092B2 (en) * 2007-07-31 2012-06-05 Micron Technology, Inc. Semiconductor devices including a through-substrate conductive member with an exposed end and methods of manufacturing such semiconductor devices
US20090081862A1 (en) * 2007-09-24 2009-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Air gap structure design for advanced integrated circuit technology
US20090079083A1 (en) * 2007-09-26 2009-03-26 United Microelectronics Corp. Interconnect structure and fabricating method of the same
US7879683B2 (en) * 2007-10-09 2011-02-01 Applied Materials, Inc. Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay
JP2009094378A (ja) * 2007-10-11 2009-04-30 Panasonic Corp 半導体装置及びその製造方法
JP5491077B2 (ja) * 2009-06-08 2014-05-14 キヤノン株式会社 半導体装置、及び半導体装置の製造方法
US8120179B2 (en) * 2009-11-10 2012-02-21 International Business Machines Corporation Air gap interconnect structures and methods for forming the same
US8237272B2 (en) * 2010-02-16 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive pillar structure for semiconductor substrate and method of manufacture
KR101281463B1 (ko) * 2010-07-06 2013-07-03 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그를 이용한 액정표시장치
CN103094186B (zh) * 2011-10-31 2015-04-01 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9082770B2 (en) * 2012-10-24 2015-07-14 Taiwan Semiconductor Manufacturing Company Limited Damascene gap structure
KR20140094880A (ko) * 2013-01-23 2014-07-31 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US9881870B2 (en) * 2015-12-30 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9553019B1 (en) 2016-04-15 2017-01-24 International Business Machines Corporation Airgap protection layer for via alignment
KR102658192B1 (ko) * 2016-07-27 2024-04-18 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
US11152254B2 (en) * 2016-12-28 2021-10-19 Intel Corporation Pitch quartered three-dimensional air gaps
WO2018231195A1 (en) * 2017-06-13 2018-12-20 Intel Corporation Air gap structures in integrated circuit components
CN108321118B (zh) * 2018-04-04 2023-10-13 长鑫存储技术有限公司 导电层间介质空洞的制备方法和半导体器件
US11244898B2 (en) * 2018-06-29 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit interconnect structures with air gaps
US10505111B1 (en) * 2018-07-20 2019-12-10 International Business Machines Corporation Confined phase change memory with double air gap
US11282781B2 (en) * 2019-07-22 2022-03-22 Nanya Technology Corporation Semiconductor device and method for fabricating the same
US11063050B2 (en) * 2019-09-25 2021-07-13 Nanya Technology Corporation Semiconductor device with air gaps and method for fabricating the same
US11232986B2 (en) * 2019-10-11 2022-01-25 Samsung Electronics Co., Ltd. Integrated circuit devices including enlarged via and fully aligned metal wire and methods of forming the same
KR102810861B1 (ko) 2020-11-03 2025-05-20 삼성전자주식회사 배선 콘택 플러그들을 포함하는 반도체 메모리 소자
US11769770B2 (en) * 2021-05-06 2023-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming a semiconductor device having an air spacer
CN113539954B (zh) * 2021-08-05 2023-10-24 长鑫存储技术有限公司 半导体结构及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722583A (ja) * 1992-12-15 1995-01-24 Internatl Business Mach Corp <Ibm> 多層回路装置
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5407860A (en) * 1994-05-27 1995-04-18 Texas Instruments Incorporated Method of forming air gap dielectric spaces between semiconductor leads
TW444342B (en) * 2000-02-17 2001-07-01 United Microelectronics Corp Manufacturing method of metal interconnect having inner gap spacer
US6448177B1 (en) * 2001-03-27 2002-09-10 Intle Corporation Method of making a semiconductor device having a dual damascene interconnect spaced from a support structure

Also Published As

Publication number Publication date
US7094689B2 (en) 2006-08-22
US20060264027A1 (en) 2006-11-23
TW200605376A (en) 2006-02-01
US20060019482A1 (en) 2006-01-26

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees