1261335 案號〔)〇!⑽8;11 …车.[.；：] ϋ 五、發明說明（i:) 【發明領域】 本發明係有關於一種晶圓背面切割方法，其特別是有關於 將晶圓研磨過薄時需要利用支撐片予以支撐，因而晶圓切 割前無法去除該支撐片時，或其他特定因素如降低晶圓正 面受損之風險，因而無法利用晶圓正面進行切割時，必須 選擇利用晶圓背面進行切割之方法。 【先前技術】 第一圖揭示習用切割裝置從晶圓之正面劃割製程之示意 圖。請參照第一圖所示，於8 9年1 2月1 1日中華民國專利公 報公告第4 1 5 0 3 6號之「晶圓分割裝置及使用該裝置之晶圓 分割方法中揭示使用於晶圓分離方法」揭示晶圓分離方 法，該方法包含下列步驟：提供一晶圓1其具有複數半導 體元件；沿介於半導體元件間之劃割線劃割晶圓至預定深 度裝晶圓於具有複數真空抽取裝置之彈性層上，使個 別半體係對正對應的個別真空抽取裝置；以真空抽取裝 置夾持晶圓於彈性層上；沿劃割線藉施加機械力於晶圓而 將晶圓分離成個別半導體晶片。其中該晶圓切割方法係利 用切割裝置3之旋轉式鑽石頭刀或雷射劃割該晶圓1之晶圓 正面11，再將已劃割之晶圓1夾持於具有真空裝置之彈性 層上，最後以機械力施加於晶圓1之劃割線上，將該晶圓1 分離成個別半導體晶片。該第4 1 5 0 3 6號利用切割裝置3劃 割晶圓正面11之方式，該方式通常僅能適用於將晶圓背面 磨薄至預定厚度，以免晶圓厚度過薄導致晶圓本身在結構 上發生變形〔d e f 〇 r m a t i ο η〕，因而需要以支撐片補強支 撐該晶圓，使該晶圓無法利用習用的晶圓正面切割方式進1261335 Case No. [) 〇! (10) 8; 11 ... car. [.;:] ϋ V. Invention Description (i:) [Invention Field] The present invention relates to a wafer back-cut method, which is particularly related to crystal When the round grinding is too thin, it needs to be supported by the support piece. Therefore, when the support piece cannot be removed before the wafer is cut, or other specific factors such as reducing the risk of damage on the front side of the wafer, and thus the front side of the wafer cannot be used for cutting, it is necessary to select A method of cutting using the back side of a wafer. [Prior Art] The first figure shows a schematic view of a conventional cutting device for cutting a process from the front side of a wafer. Please refer to the first figure, which is disclosed in the wafer dividing device and the wafer dividing method using the same in the Republic of China Patent Gazette No. 4 1 5 0 3 6 The wafer separation method discloses a wafer separation method, the method comprising the steps of: providing a wafer 1 having a plurality of semiconductor elements; and dicing the wafer along a scribe line between the semiconductor elements to a predetermined depth to have a plurality of wafers On the elastic layer of the vacuum extraction device, the individual vacuum systems are aligned with the individual vacuum systems; the vacuum extraction device is used to clamp the wafer on the elastic layer; the mechanical force is applied to the wafer along the scribe line to separate the wafer into Individual semiconductor wafers. The wafer cutting method cuts the wafer front side 11 of the wafer 1 by using a rotary diamond head knife or laser of the cutting device 3, and then clamps the cut wafer 1 to an elastic layer having a vacuum device. Finally, mechanical force is applied to the scribe line of the wafer 1 to separate the wafer 1 into individual semiconductor wafers. The method of dicing the front side 11 of the wafer by the cutting device 3 is generally applicable to the method of thinning the back surface of the wafer to a predetermined thickness to prevent the wafer from being too thin and causing the wafer itself to be The structure is deformed [def 〇rmati ο η], so it is necessary to support the wafer with the support sheet, so that the wafer cannot be cut by the conventional wafer front side cutting method.
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五、發明說明：2、 I ί亍切割。當進行切割該晶圆正面時，該切割晶圓正面僅能 週用切割具有預疋厚度之晶圓。在切剖’品圓過程中尸/γ座生 的碎削往往發生污染晶圓正面之情事，因而增加晶圓正面 受損的風險。因此在晶圓正面進行切割不但具有晶圓厚度 不能過薄的限制條件，而且亦增加晶圓正面受損的風險。 由上所析，目前晶圓切割已趨向不適合使用晶圓正面直接 進行切割，因此必然尋找其他切割方法替代目前的晶圓正 面切割方式。 有鑑於此，本發明改良上述之缺點，提供選擇利晶圓背 面之切割方法，以替代習用之晶圓正面切割方法，其不但 在切割條件上不受晶圓厚度的限制，且必然降低晶圓正面 切割受損之風險而提升晶圓切割之製程良率。 【發明概要】 本發明之主要目的係提供一種晶圓背面切割方法，其提 擇利晶圓背面之切割方法，其在切割製程條件上不受 晶圓厚度的限制，使本發明具有提升晶圓之切割裕度之功 效。 本發明之主要目的係提供一種晶圓背面切割方法，其提 供選擇利晶圓背面之切割方法，其降低晶圓正面切割受損 之風險，使本發明具有提升晶圓切割之製程良率之功效。 根據本發明之晶圓背面切割方法，該方法包含下列步 驟；將一晶圓之正面結合於一支撐片，其背面設有數個輔 助切割記號；利用切割裝置在該晶圓之背面上沿該輔助切Fifth, the invention description: 2, I 亍 亍 cutting. When cutting the front side of the wafer, the front side of the dicing wafer can only be used to cut the wafer having the pre-thickness. The fragmentation of the corpse/gamma seat during the cutting process tends to contaminate the front side of the wafer, thereby increasing the risk of damage to the front side of the wafer. Therefore, cutting on the front side of the wafer not only has the limitation that the thickness of the wafer cannot be too thin, but also increases the risk of damage to the front side of the wafer. From the above, wafer cutting has become less suitable for cutting directly on the front side of the wafer, so it is inevitable to find other cutting methods to replace the current wafer front cutting method. In view of the above, the present invention improves the above disadvantages, and provides a cutting method for selecting the back surface of the wafer to replace the conventional wafer front cutting method, which is not limited by the thickness of the wafer in the cutting condition, and the wafer is inevitably lowered. The risk of damage to the front cut increases the process yield of wafer cutting. SUMMARY OF THE INVENTION The main object of the present invention is to provide a wafer back-side dicing method for selecting a dicing method on the back side of a wafer, which is not limited by the thickness of the wafer in the dicing process conditions, so that the present invention has a wafer lifted The effect of cutting margin. The main object of the present invention is to provide a wafer backside cutting method, which provides a method for selecting a back surface of a wafer, which reduces the risk of damage to the front side of the wafer, and has the effect of improving the yield of the wafer cutting process. . According to the wafer backside cutting method of the present invention, the method comprises the steps of: bonding a front side of a wafer to a support sheet, and having a plurality of auxiliary cutting marks on the back surface thereof; and using the cutting device on the back side of the wafer along the auxiliary cut
C:\Logo-5\Five Continents\PK7790a. ptc 第6頁 1261335 案號 90109831 .弓 曰 五、發明說明ί 3) 為了讓本實驗之上述和其他目的、特徵，和優點能更明 確特徵，本文特舉本發明較佳實施例，並配合所附圖式， 作詳細說明如下。 本發明之晶圓背面切割方法主要提供選擇利晶圓背面之 切割方法，以替代習用之晶圓正面切割方法，其不但在切 割條件上不受晶圓厚度的限制，且必然降低晶圓正面切割 受損之風險而提升晶圓切割之製程良率。 第二圖揭示本發明較佳實施例晶圓正面之上視圖。第三 圖揭示本發明較佳實施例晶圓正面之局部放大圖^第四圖 揭示本發明較佳實施例晶圓背面切割之示意圖。 請參照第一、二、三及四圖所示，本發明較佳實施例之 晶圓背面切割方法：一晶圓1之正面11上疊置結合一支撐 片2，該正面11與支撐片2以適當方式結合並可去除，依一 圓晶圓臨時性定位方式而言，本發明係可選擇以夾 勒貼或真空吸持方式結合該正面1 1及支撐片2，及藉 由移除夾具、黏膠或停止抽真空等方式將該支撐片2由該 正面1 1去除。該支撐片2在該晶片1之正面1 1上形成保護 層，該晶片1之背面1 2上設有數個輔助切割記號 〔a 1 i g n m e n t m a r k〕1 3，如第三圖所示，該記號1 3係利用 磨床研磨該晶圓1之背面1 2時，一併設置形成在該背面1 2 上，該記號1 3供切割裝置定位切割晶圓，如第二圖所示； 將該晶圓1之背面12朝向切割裝置3之刀具32方向置於一平 臺3 1上，如第一圖所示，此時，該晶圓1之正面1 1之支撐 片2位於平臺3 1上，第四圖所示；該切割裝置3在該晶圓1 之背面1 2上沿該輔助切割記號1 3及預定路徑進行切割，如C:\Logo-5\Five Continents\PK7790a. ptc Page 6 1261335 Case No. 90109831. Bow 5, Invention Description ί 3) In order to make the above and other purposes, features, and advantages of this experiment more specific, this article DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The wafer backside cutting method of the present invention mainly provides a method for selecting the back surface of the wafer to replace the conventional wafer front side cutting method, which is not limited by the thickness of the wafer in the cutting condition, and necessarily reduces the front side of the wafer. The risk of damage increases the yield of wafer cutting processes. The second figure reveals a top view of the front side of the wafer in accordance with a preferred embodiment of the present invention. 3 is a partially enlarged view of a front side of a wafer in accordance with a preferred embodiment of the present invention. FIG. 4 is a schematic view showing the backside cutting of a preferred embodiment of the present invention. Referring to the first, second, third and fourth figures, a wafer back surface cutting method according to a preferred embodiment of the present invention: a front surface 11 of a wafer 1 is stacked with a support sheet 2, the front surface 11 and the support sheet 2 The invention can be combined and removed in an appropriate manner. According to a temporary positioning manner of a wafer, the present invention can be combined with the front surface 1 1 and the support sheet 2 by means of a clip or a vacuum holding method, and by removing the jig, The support sheet 2 is removed from the front surface 1 1 by means of a glue or by stopping vacuuming. The support sheet 2 is formed with a protective layer on the front surface 1 of the wafer 1. The back surface 12 of the wafer 1 is provided with a plurality of auxiliary cutting marks 13 as shown in the third figure. When the back surface 1 2 of the wafer 1 is ground by a grinding machine, it is disposed on the back surface 1 2 , and the mark 13 is used for positioning the cutting wafer by the cutting device, as shown in the second figure; The back surface 12 is placed on a platform 31 in the direction of the cutter 32 of the cutting device 3, as shown in the first figure. At this time, the support sheet 2 of the front surface 1 of the wafer 1 is located on the platform 31, and the fourth figure The cutting device 3 cuts along the auxiliary cutting mark 13 and a predetermined path on the back surface 1 2 of the wafer 1, such as
C:\Logo-5\Fi ve Cont i nents\PK7790a. ptc 第7頁 1261335 案妮 Π〇1Πί)8:]，ί I 1 日 五、諸丨H說明ί 4 ) 第四圖所示，使該晶圓1形成數個半導體晶片。在晶圓切 割後段製程上，利用適當製程方法去除晶圓1切割後殘留 在晶片正面上的支撐片2 1以便進行接續的封裝製程。 請再參照第二圖所示，晶圓1之支撐片2材質較佳由具有 剛性之物質如玻璃等製造，該支撐片2保護晶圓1之正面1 1 受製程污染，降低晶圓正面切割受損之風險。此外，支撐 片2防止晶圓1在結構上產生變形，因而任何厚度的晶圓1 皆可藉由該支撐片2予以支撐，使晶圓1在切割製程條件上 不受晶圓厚度的限制，本發明之切割方法提升晶圓之切割 裕度。 請再參照第一及四圖所示，在進行晶圓背面切割時，切 割裝置3沿預定路徑來回切割，該切割路徑沿縱向及橫向 ^形成網隔狀對應於晶圓1之切道〔未標示〕，該切割裝置3 具32較佳為旋轉式鑽石頭刀或雷射刀。 本^發明之晶圓背面切割方法相較於先前技術之正面切割 方法，本發明提供選擇利晶圓背面之切割方法，以替代習 用之晶圓正面切割方法，其不但在切割條件上不受晶圓厚 度的限制，且必然降低晶圓正面切割受損之風險而提升晶 圓切割之製程良率。 雖然本發明已以前述較佳實施例揭示，然其並非用以限 定本發明，任何熟習此技藝者，在不脫離本發明之精神和 範圍内，當可作各種之更動與修改，因此本發明之保護範 圍當視後附之申請專利範圍所界定者為準。C:\Logo-5\Fi ve Cont i nents\PK7790a. ptc Page 7 1261335 Case Nicole 1Πί)8:], ί I 1 5, 丨H Description ί 4) Figure 4 shows The wafer 1 forms a plurality of semiconductor wafers. On the wafer cutting after-stage process, the support sheet 2 1 remaining on the front surface of the wafer after the wafer 1 is cut is removed by an appropriate process to perform a subsequent packaging process. Referring to the second figure, the material of the support sheet 2 of the wafer 1 is preferably made of a rigid material such as glass. The support sheet 2 protects the front side of the wafer 1 from contamination of the process and reduces the front cut of the wafer. Risk of damage. In addition, the support sheet 2 prevents the wafer 1 from being deformed in structure, so that the wafer 1 of any thickness can be supported by the support sheet 2, so that the wafer 1 is not limited by the thickness of the wafer in the cutting process conditions. The cutting method of the present invention increases the cutting margin of the wafer. Referring to FIGS. 1 and 4 again, when the wafer is back-cut, the cutting device 3 is cut back and forth along a predetermined path, and the cutting path forms a mesh partition corresponding to the tangent of the wafer 1 in the longitudinal direction and the lateral direction. The cutting device 3 is preferably a rotary diamond head knife or a laser knife. The wafer back surface cutting method of the present invention is compared with the front side cutting method of the prior art, and the present invention provides a method for selecting the back surface of the wafer to replace the conventional wafer front side cutting method, which is not only in the cutting condition. The limitation of the thickness of the circle and the risk of damage to the front side of the wafer are inevitably reduced to improve the process yield of wafer cutting. While the present invention has been disclosed in its preferred embodiments, the present invention is not intended to limit the invention, and the invention may be variously modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
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