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TWI261165B - Memory module storing therein boot codes and method and device for locating same - Google Patents

Memory module storing therein boot codes and method and device for locating same Download PDF

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Publication number
TWI261165B
TWI261165B TW91104465A TW91104465A TWI261165B TW I261165 B TWI261165 B TW I261165B TW 91104465 A TW91104465 A TW 91104465A TW 91104465 A TW91104465 A TW 91104465A TW I261165 B TWI261165 B TW I261165B
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Taiwan
Prior art keywords
memory module
point
electrically connected
logic device
core logic
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TW91104465A
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Chinese (zh)
Inventor
Jiin Lai
Jih-Hsin Tsai
Hsiang-I Huang
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Via Tech Inc
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Publication of TWI261165B publication Critical patent/TWI261165B/en

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Abstract

A memory module storing therein boot codes, a core logic device capable of distinguishing such memory module from the other memory modules of the same module specification, and a method for realizing the boot codes from the memory module storing therein the boot codes are disclosed. All the memory modules are electrically connected to the core logic device via respective signal pins, but the memory module storing therein boot codes outputs an identifying signal different from the identifying signals outputted by the other memory modules in a booting process. Therefore, the core logic device can locate the memory module storing therein the boot codes, and the host device can accomplish the booting process by reading the boot codes from the specific memory module.

Description

1261165 五、發明說明(i) 發明領域 本案係揭示一種儲存有開機程式碼之記憶體模組、具 記憶體模組辨識能力之核心邏輯裝置以及開機程式碼讀取 方法,尤指應用於電腦系統中之一種儲存有開機程式碼之 記憶體模組、具記憶體模組辨識能力之核心邏輯裝置以及 開機程式碼讀取方法 發明背景 在一電腦系統進行開機之過程中,微處理器通常必須 從 非揮發性記憶體(Ν ο η - v ο 1 a t i 1 e m e m 〇 r y )中擷取 段 開機程式 行系統自 開機動作 統(B a s i c 基本輸出 快閃記憶 請參 1 1 、南橋 出,基本 因此微處 能擷取到 碼。除了 碼(boot codes)並予以執行,藉此進行包含有執 我測試工作以及讀取系統基本設定資料等在内之 ,而此段開機程式碼一般被稱為基本輸出輸入系 Input Output System ,簡稱BIOS),而儲存有 輸入系統程式碼之非揮發性記憶體(目前大多以 體完成)則被稱為基本輸出輸入系統晶片。 見第一圖,其係一目前微處理器1 〇 、北橋晶片 晶片1 2之習用架構示意圖,其中可以很清楚地看 輸出輸入系統晶片1 3係被連接至該南橋晶片1 2 , 理器1 0係必須透過北橋晶片1 1與南橋晶片1 2 ,方 基本輸出輸入系統晶片1 3中所存放之開機程式 基本輸出輸入系統晶片1 3之記憶體外,電腦系統1261165 V. INSTRUCTION DESCRIPTION (i) Field of the Invention The present invention discloses a memory module storing a boot code, a core logic device having a memory module identification capability, and a boot code reading method, especially for a computer system. A memory module storing a boot code, a core logic device having a memory module identification capability, and a boot code reading method. BACKGROUND OF THE INVENTION In a computer system booting process, a microprocessor usually has to Non-volatile memory (Ν ο η - v ο 1 ati 1 emem 〇ry ) in the section of the boot program line system from the boot action system (B asic basic output flash memory please refer to 1 1 , South Bridge out, basically so micro The code can be retrieved. In addition to the code (boot codes) and executed, this includes performing the test work and reading the basic settings of the system, etc., and the boot code is generally called the basic output. Input Output System (BIOS), and non-volatile memory with input system code (currently mostly Into) the basic input-output system is called a wafer. See the first figure, which is a schematic diagram of the conventional architecture of the microprocessor 1 and the north bridge wafer wafer. It can be clearly seen that the output input system chip 13 is connected to the south bridge wafer 1 2, the processor 1 The 0 system must pass through the north bridge chip 1 1 and the south bridge chip 1 2 , and the basic output input system chip 13 is stored in the boot program. The basic output is input to the system chip 1 3 memory body, the computer system

第6頁 1261165 五、發明說明(2) 亦包括複數個電連接於北橋晶片1 1之其它記憶體1 4。這些 °己fe、體1 4 一般係為動® Ik機存取記憶體(d y n a m丨c Γ a n d 〇 m access memory;以下簡稱DRAM)模組。然而,美商美光科 技(Micron Technology, Inc.)所發展出之一種&介(^1&}1〇;: 快閃記憶體可與DRAM使用相同的匯流排,並以同一個] 記憶體控制器來執行。因此,現在亦可使用一SyncFlah〇 快閃記憶體來作為該等記憶體1 4之一。在此情形下,使用 一 SyncFlash雙面針腳定義記憶體模組(SyncFlash DualPage 6 1261165 V. Description of the Invention (2) A plurality of other memories 14 electrically connected to the Northbridge wafer 1 1 are also included. These ̄ ̄ ̄ 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 However, one of the technologies developed by Micron Technology, Inc. (^1&}1〇;: flash memory can use the same bus as DRAM, and the same] memory The controller is executed. Therefore, a SyncFlah flash memory can now be used as one of the memories 14. In this case, a SyncFlash double-sided pin is used to define the memory module (SyncFlash Dual).

In-line Memory Module ,簡稱SyncFlash DIMM)來作為儲 存開機程式碼之基本輸出輸入系統晶片1 3,並插置到記憶 體1 4所用之插槽上是可行的。藉由此方式,微處理器丨〇可 以很快地透過北橋晶片1 1擷取到開機程式碼。 但是,也由於上述S y n c F 1 a s h雙面針腳定義記憶體模 組係與一般DRAM之雙面針腳定義記憶體模組具有相同模組 規格且同樣插置於與北橋晶片1 1相連接之記憶體插槽上, 因此北橋晶片1 1所看到之S y n c F 1 a s h記憶體模組與D R A Μ記 憶體模組,兩者皆為相同之雙面針腳定義記憶體模組,並 無法於進行開機動作時直接辨識出何者為載有開機程式碼 之Sy ncF 1 ash記憶體模組,而如何提出一可快速辨識且實 用之解決方案,係為發展本案之主要目的。 發明概述 電 本案之第一方面係為一種記憶體模組,電連接於The In-line Memory Module (SyncFlash DIMM) is used as a basic output for storing the boot code, and is inserted into the slot used for the memory 14. In this way, the microprocessor can quickly retrieve the boot code through the north bridge chip 1 1 . However, since the above-mentioned Sync F 1 ash double-sided pin definition memory module has the same module specifications as the general DRAM double-sided pin definition memory module and is also inserted into the memory connected to the north bridge wafer 1 1 In the body socket, the Sync F 1 ash memory module and the DRA Μ memory module seen by the north bridge chip 1 1 are both the same double-sided pin definition memory module, and cannot be performed. The Sy ncF 1 ash memory module carrying the boot code is directly identified during the boot operation, and how to propose a quick-recognition and practical solution is the main purpose of the development of the case. SUMMARY OF THE INVENTION The first aspect of the present invention is a memory module electrically connected to

第7頁 1261165 組中儲存有該電腦系統所需之一開 該記憶體模組電連接至該電腦系統 一辨識信號,用以提供該電腦系統 統能判斷出該開機程式碼儲存之 電腦系 片選擇 n a b 1 e 更包含 輸出一 包含一 出一南 模組係 一北橋 統係於 識信號。 為一非揮發性記憶體模組,例如 五、發明說明(3) 腦糸統中’該記憶體模 機程式碼,其特徵在於 之一信號接腳上係輸出 讀取,進而使該電腦系 處。 其中,電連接至該 對點信號接腳,例如晶 時脈致能接腳(C 1 〇 c k E 該記憶體模組較佳 電連接至該下拉電阻而 者,該記憶體模組亦可 連接至一上拉電阻而輸 較佳者,該記憶體 核心邏輯裝置,尤其是 較佳者,該電腦系 信號接腳所輸出之該辨 該記憶體模組較佳 S y n c F 1 a s h記憶體模組 本案之第二方面係 至複數個記憶體模組之 中之一特定記憶體模組 之一開機程式碼,而該 由該等個信號接腳上分 以判斷出該等記憶體模 統之該信號接腳較佳為一點 接腳(Chip Select pin)或 pin) 〇 一下拉電阻,該信號接腳係 低準位之數位辨識信號。或 上拉電阻,該信號接腳係電 準位之數位辨識信號。 電連接於該電腦系統中之一 晶片 。 一開機程序之期間中讀取該 為一種核心邏輯裝置,具有電連接 複數個信號接腳,該等記憶體模組 内儲存有一主機之開機程序中所需 核心邏輯裝置係於該開機程序中, 別讀入相對應之辨識信號,藉此用 組中,何者為該開機程式碼所儲存Page 7 1261165 One of the required ones of the computer system is stored in the group. The memory module is electrically connected to the computer system for an identification signal for providing a computer system for determining the storage code of the computer system. Select nab 1 e to include the output one including one out of the south module system and one north bridge system. For a non-volatile memory module, for example, the fifth description of the invention (3) in the brain system, the memory model code is characterized in that one of the signal pins is outputted and read, thereby making the computer system At the office. The memory module is electrically connected to the pair of signal pins, such as a crystal clock enable pin (C 1 〇 ck E , the memory module is preferably electrically connected to the pull-down resistor, and the memory module can also be connected Preferably, the memory core logic device, particularly preferably, the computer system signal pin outputs the memory module is preferably a Sync F 1 ash memory phantom The second aspect of the present invention is to one of a plurality of memory modules, one of the specific memory modules, and the one of the signal pins is divided to determine the memory modules. The signal pin is preferably a Chip Select pin or a pin. The pull pin is a low-level digital identification signal. Or a pull-up resistor, this signal pin is the digital identification signal of the potential level. Electrically connected to one of the wafers in the computer system. During the booting process, the core logic device is electrically connected to a plurality of signal pins, and the core logic device required in the booting process of the memory module is stored in the booting program. Do not read the corresponding identification signal, so that in the group, which is stored in the boot code

第8頁 1261165 五、發明說明(4) 之該特定記憶 較佳者, 為如晶片選擇 (Clock 在 腳係電 (p u 1 1 - E n a b 1 一實施 連接至 down r 接至其 而電連 電阻(pull-up 號。 在另一實 接腳係 pul 1 電連接 up res 至其它 電連接 P且(pul 1-down 號。 該 中之一 另 模組等 機存取 較 面針腳 為一動 核心邏 北橋晶外,該 非揮發 記憶體 佳者, 定義記 態隨機 體模組。 電連接至該等記憶體模組之該等信號接腳皆 接腳(C h i p S e 1 e c ΐ p i n s )或時脈致能接腳 e p i n s )等點對點信號接腳。 例中,電連接至該特定記憶體模組之信號接 位於該特定記憶體模組中之一下拉電阻 e s i s t 〇 r )而讀入一低準位之數位辨識信號, 它記憶體模組之信號接腳則電連接至一上拉 resistor)而讀入一高準位之數位辨識信 施例中,電連接至該特定記憶體模組之信號 至位於該特定記憶體模組中之一上拉電阻 i s t 〇 r )而讀入一高準位之數位辨識信號,而 記憶體模組之信號接腳則電連接至一下拉電 resistor)而讀入一低準位之數位辨識信 輯裝置例如可為一晶片組,尤其是一晶片組 片。 特定記憶體模組可為一如S y n c F 1 a s h記憶體 性記憶體模組,而其它記憶體模組可為一隨 模組,例如動態隨機存取記憶體模組。 該S y n c F 1 a s h記憶體模組係為一 S y n c F 1 a s h雙 憶體模組,而該動態隨機存取記憶體模組係 存取雙面針腳定義記憶體模組。Page 8 1261165 V. Inventive Note (4) The specific memory is better, such as wafer selection (Clock is in the foot system (pu 1 1 - E nab 1 - the implementation is connected to the down r connected to it and the electrical resistance (pull-up number. In another real pin system pul 1 is electrically connected up res to other electrical connection P and (pul 1-down number. One of the other modules accesses the face-to-face pin as a dynamic core logic Outside the North Bridge, the non-volatile memory is better, and the randomized random body module is defined. The signal pins that are electrically connected to the memory modules are pin-connected (C hip S e 1 ec ΐ pins ) or clock In the example, the signal connected to the specific memory module is connected to a pull-down resistor esist 〇r in the specific memory module and read into a low level. The digital identification signal, the signal pin of the memory module is electrically connected to a pull-up resistor, and is read into a high-level digital identification signal embodiment, and is electrically connected to the signal of the specific memory module to One of the pull-up resistors in the particular memory module Ist 〇r) and reading a digital identification signal of a high level, and the signal pin of the memory module is electrically connected to the lower power sensor, and the digital identification device for reading a low level can be A chip set, especially a chip set. The specific memory module can be a memory memory module such as S y n c F 1 a s h, and the other memory modules can be a follow-up module, such as a dynamic random access memory module. The S y n c F 1 a s h memory module is a S y n c F 1 a s h double memory module, and the dynamic random access memory module accesses the double-sided pin definition memory module.

第9頁 1261165 五、發明說明(5) 本案之第三方面係為一種開機程式碼讀取方法,應用 於一核心邏輯裝置與複數個記憶體模組之間,該核心邏輯 裝置具有電連接至該等記憶體模組之複數個信號接腳,該 等記憶體模組中之一特定記憶體模組内儲存有一開機程序 中所需之一開機程式碼,而該讀取方法包含下列步驟:於 該開機程序中,該核心邏輯裝置由該等信號接腳上分別讀 入相對應之辨識信號,藉此判斷出儲存有該開機程式碼之 該特定記憶體模組;以及由該特定記憶體模組中將該開機 程式碼I買出。 簡單圖式說明 本案得藉由下列圖式及詳細說明,俾得一更深入之了 解: 第一圖:其係一目前微處理器、北橋晶片、南橋晶片之習 用架構示意圖。 第二圖:其係本案第一較佳實施例之功能方塊示意圖。 第三圖··其係本案第二較佳實施例之功能方塊示意圖。 第四圖(a)(b):其係由金氧半電晶體(MOS transistor)所 構成電阻之不意圖。 本案圖式中所包含之各元件列示如下: 微處理器1 0 北橋晶片1 1Page 9 1261165 V. Description of the invention (5) The third aspect of the present invention is a boot code reading method applied between a core logic device and a plurality of memory modules, the core logic device having an electrical connection to The plurality of signal pins of the memory modules, wherein one of the memory modules stores a boot code required in the boot process, and the read method includes the following steps: In the booting process, the core logic device reads the corresponding identification signal from the signal pins respectively, thereby determining the specific memory module storing the boot code; and the specific memory The boot code I is bought in the module. A brief description of the case The following drawings and detailed descriptions can be used to obtain a more in-depth understanding: The first figure: It is a schematic diagram of the conventional architecture of the current microprocessor, Northbridge chip, and Southbridge chip. Second figure: It is a functional block diagram of the first preferred embodiment of the present invention. The third figure is a functional block diagram of the second preferred embodiment of the present invention. Fourth (a) and (b): This is not intended to be a resistor composed of a MOS transistor. The components included in the diagram of this case are listed as follows: Microprocessor 1 0 North Bridge Chip 1 1

第10頁 1261165 五、發明說明(6) 南橋晶片1 2 記憶體1 4 北橋晶片2 1 上拉電阻213、214 S y n c F 1 a s h記憶體模組2 3 微處理器3 Ο 晶片選擇接腳3 1 1 、3 1 2 D R A Μ記憶體模組3 2 上拉電阻3 3 1 基本輸出輸入系統晶片1 3 微處理器2 0 晶片選擇接腳211 、212 D R A Μ記憶體模組2 2 下拉電阻2 3 1 北橋晶片3 1 下拉電阻313、314 S y n c F 1 a s h記憶體模組3 3 較佳實施例說明 請參見第二圖,其係本案第一較佳實施例之功能方塊 示意圖,於本例中,由於北橋晶片2 1之晶片選擇接腳 (C h i p S e 1 e c t p i η,簡稱C S ) 2 1 1 、2 1 2皆個別連接至一上 拉電阻(pull-up resistor)213、214而使其上電壓被拉至 南準位V c c。因此’為能使儲存有開機程式碼之S y n c F 1 a s h 記憶體模組2 3可被北橋晶片2 1從其它D R A M記憶體模組2 2中 辨識出來,吾人係於S y n c F 1 a s h記憶體模組2 3之晶片選擇 接腳(CS)上連接一下拉電阻(pull-down resistor)231接 地,吾人係可將下拉電阻2 3 1之電阻值設定為遠小於上拉 電阻2 1 3之電阻值,進而形成一強下拉而弱上拉之電位狀 態。 而因下拉電阻231之電阻值遠小於上拉電阻213之電阻Page 10 1261165 V. Invention Description (6) South Bridge Chip 1 2 Memory 1 4 North Bridge Chip 2 1 Pull-up Resistor 213, 214 S ync F 1 ash Memory Module 2 3 Microprocessor 3 晶片 Chip Select Pin 3 1 1 , 3 1 2 DRA Μ Memory Module 3 2 Pull-up Resistor 3 3 1 Basic Output Input System Chip 1 3 Microprocessor 2 0 Chip Select Pin 211, 212 DRA Μ Memory Module 2 2 Pull-down Resistor 2 3 1 North Bridge Wafer 3 1 Pull-down Resistor 313, 314 S ync F 1 ash Memory Module 3 3 For a description of the preferred embodiment, please refer to the second figure, which is a functional block diagram of the first preferred embodiment of the present invention. The chip selection pins (C hip S e 1 ectpi η, CS for short) 2 1 1 and 2 1 2 of the north bridge chip 2 are individually connected to a pull-up resistor 213, 214. The voltage on it is pulled to the south level V cc . Therefore, in order to enable the Sync F 1 ash memory module 2 3 storing the boot code to be recognized by the north bridge chip 2 1 from other DRAM memory modules 2 2, we are in the Sync F 1 ash memory. The chip select pin (CS) of the body module 2 3 is connected to the pull-down resistor 231 to ground, and the resistance value of the pull-down resistor 2 3 1 can be set to be much smaller than the pull-up resistor 2 1 3 The resistance value, in turn, forms a strong pull-down and weak pull-up potential state. And because the resistance value of the pull-down resistor 231 is much smaller than the resistance of the pull-up resistor 213

第11頁 1261165 五、發明說明(7) 值,故北橋晶片2 1於開機程序(或是重置程序)之期間,便 -可進行讀取該等晶片選擇接腳(C S ) 2 1 1 、2 1 2上電壓準位信 號之動作,而以偵測低準位信號之方式,北橋晶片2 1便可 判斷出何者為連接至S y n c F 1 a s h記憶體模組2 3之晶片選擇 接腳,而進一步使微處理器2 0能透過北橋晶片2 1而由 S y n c F 1 a s h記憶體模組2 3中擷取到開機程式碼,進而完成 : 後續之開機程序(或是重置程序)。 · 請參見第三圖,其係本案第二較佳實施例之功能方塊 / 示意圖,於本例中,由於北橋晶片3 1之晶片選擇接腳(C S ) 3 1 1 、3 1 2皆個別連接至一下拉電阻3 1 3、3 1 4至接地點而被 拉至低準位。因此,為能使儲存有開機程式碼之 _ S y n c F 1 a s h記憶體模組3 3可被北橋晶片3 1從其它D R A Μ記憶 體模組3 2中辨識出來,吾人係於S y n c F 1 a s h記憶體模組3 3 之晶片選擇接腳(C S )上連接一上拉電阻3 3 1至一電壓源 V c c,吾人係可將上拉電阻3 3 1之電阻值設定為遠小於下拉 電阻3 1 3之電阻值,進而形成一強上拉而弱下拉之電位狀 態。 而因上拉電阻331之電阻值遠小於下拉電阻313之電阻 值,故北橋晶片3 1於開機程序(或是重置程序)之期間,便 可進行讀取該等晶片選擇接腳(CS ) 3 1 1 、3 1 2上電壓準位信 號之動作,而以偵測高準位信號之方式,北橋晶片3 1便可 判斷出何者為連接至S y n c F 1 a s h記憶體模組3 3之晶片選擇 _ 接腳,而進一步使微處理器3 0能透過北橋晶片3 1而由 S y n c F 1 a s h記憶體模組3 3中擷取到開機程式碼,進而完成 ·Page 11 1261165 5, invention description (7) value, so the North Bridge chip 2 1 during the boot process (or reset procedure) - can read the chip select pin (CS) 2 1 1 , 2 1 2 operation of the voltage level signal, and by detecting the low level signal, the north bridge chip 2 1 can determine which is the chip selection pin connected to the Sync F 1 ash memory module 2 3 Further, the microprocessor 20 can pass through the north bridge chip 2 1 and the boot code is retrieved from the Sync F 1 ash memory module 2 3, thereby completing: a subsequent boot process (or reset procedure) . Please refer to the third figure, which is a functional block/schematic diagram of the second preferred embodiment of the present invention. In this example, the wafer selection pins (CS) 3 1 1 and 3 1 2 of the north bridge chip 31 are individually connected. Pull the resistors 3 1 3, 3 1 4 to the ground point and pull them to the low level. Therefore, in order to enable the _Sync F1 ash memory module 3 3 storing the boot code to be recognized by the north bridge chip 3 1 from other DRA Μ memory modules 3 2, we are connected to Sync F 1 A pull-up resistor 3 3 1 to a voltage source V cc is connected to the chip select pin (CS) of the ash memory module 3 3 , and the resistance value of the pull-up resistor 3 3 1 can be set to be much smaller than the pull-down resistor. The resistance value of 3 1 3, which in turn forms a strong pull-up and weak pull-down potential state. Since the resistance value of the pull-up resistor 331 is much smaller than the resistance value of the pull-down resistor 313, the north bridge chip 31 can read the chip selection pins (CS) during the boot process (or reset procedure). 3 1 1 , 3 1 2 on the voltage level signal action, and in the way of detecting the high level signal, the north bridge chip 3 1 can determine which is connected to the Sync F 1 ash memory module 3 3 The chip selects the _ pin, and further enables the microprocessor 30 to pass through the north bridge chip 3 1 and capture the boot code from the Sync F 1 ash memory module 3 3 , thereby completing

第12頁 1261165 五、發明說明(8) 後續之開機程序(或是重置程序)。 縱上所述,本案之技術手段將可準確快速地在插置於 記憶體插槽上之眾多記憶體模組中,辨識出何者為儲存有 開機程式碼之S y n c F 1 a s h記憶體模組,確實達成發展本案 之主要目的。而除了上述晶片選擇接腳(CS)外,本案之技 術手段尚可被運用於屬於北橋晶片與記憶體模組間之任何 點對點信號接腳上,例如時脈致能接腳(C 1 〇 c k E n a b 1 e pin,簡稱CKE)。而為能高度整合至積體電路製程中,上 述之上拉電阻與下拉電阻皆可用如第四圖(a)(b)所示,由 金氧半電晶體(MOS transistor)所構成之電阻來完成。當 然,本案亦可被運用於任何關於核心邏輯(c 〇 r e 1 〇 g i c )裝 置之類似硬體環境中,故本案發明得由熟習此技藝之人士 任施匠思而為諸般修飾,然皆不脫如附申請專利範圍所欲 保護者。Page 12 1261165 V. Description of the invention (8) Follow-up procedure (or reset procedure). In the above description, the technical means of the present invention can accurately and quickly identify in the plurality of memory modules inserted in the memory slot, which is the Sync F 1 ash memory module storing the boot code. It did achieve the main purpose of developing the case. In addition to the above-mentioned chip select pin (CS), the technical means of the present invention can be applied to any point-to-point signal pin between the north bridge chip and the memory module, for example, a clock-enabled pin (C 1 〇ck) E nab 1 e pin, referred to as CKE). In order to be highly integrated into the integrated circuit process, the above-mentioned pull-up resistor and pull-down resistor can be used as shown in the fourth figure (a) (b), the resistor composed of MOS transistor. carry out. Of course, this case can also be applied to any similar hardware environment of the core logic (c 〇re 1 〇gic) device, so the invention of this case can be modified by people who are familiar with the art, but none of them Remove as intended from the scope of the patent application.

第13頁 1261165 圖式簡單說明 第一圖:其係一目前微處理器、北橋晶片、南橋晶片之習 用架構示意圖。 第二圖:其係本案第一較佳實施例之功能方塊示意圖。 第三圖:其係本案第二較佳實施例之功能方塊示意圖。 第四圖(a)(b) ··其係由金氧半電晶體(MOS transistor)所 構成電阻之不意圖。Page 13 1261165 Brief Description of the Diagram First: It is a schematic diagram of the conventional architecture of the current microprocessor, Northbridge, and Southbridge. Second figure: It is a functional block diagram of the first preferred embodiment of the present invention. The third figure is a functional block diagram of the second preferred embodiment of the present invention. Fig. 4 (a) and (b) are not intended to constitute a resistor by a MOS transistor.

第14頁Page 14

Claims (1)

I;案號蚶]^每65 1 > 月 日__ L—.?Γ、▼讀蓴羽讀圍 ^’— ‘ ‘ 1. 一種記憶體模組,電連接於一電腦系統中之一核心邏輯 裝置’該記憶體模組中儲存有該電腦糸統所需之一開機程 式碼’其特徵在於該記憶體模組電連接至該電腦糸統之一 點對點信號接腳上係輸出一辨識信號,用以提供該核心邏 輯裝置讀取,進而使該電腦系統能判斷出該開機程式碼儲 存之處。 2. 如申請專利範圍第1項所述之記憶體模組,其中該點對 點信號接腳係選自一晶片選擇接腳(Chip Select pi η)或 一時脈致能接腳(C 1 ο c k Ε η a b 1 e ρ i η )。 3 .如申請專利範圍第1項所述之記憶體模組,其中更包含 一下拉電阻,該點對點信號接腳係電連接至該下拉電阻而 輸出一低準位之數位辨識信號。 4.如申請專利範圍第1項所述之記憶體模組,其中更包含 一上拉電阻,該點對點信號接腳係電連接至一上拉電阻而 輸出一高準位之數位辨識信號。 5 .如申請專利範圍第1項所述之記憶體模組,其所電連接 之該核心邏輯裝置係為一北橋晶片。 6 .如申請專利範圍第1項所述之記憶體模組,其中該電腦 系統係於一開機程序之期間中讀取該點對點信號接腳所輸 出之該辨識信號。 7. 如申請專利範圍第1項所述之記憶體模組,其係一非揮 發性記憶體模組。 8. —種核心邏輯裝置,具有電連接至複數個記憶體模組之 複數個點對點信號接腳,該等記憶體模組中之一特定記憶I; case number 蚶]^ every 65 1 > month __ L—.?Γ, ▼ read 莼羽读围^'- ' ' 1. A memory module, electrically connected to one of the computer systems The core logic device 'the memory module stores one of the boot code required for the computer system' is characterized in that the memory module is electrically connected to a point-to-point signal pin of the computer system and outputs an identification The signal is used to provide reading by the core logic device, so that the computer system can determine where the boot code is stored. 2. The memory module of claim 1, wherein the point-to-point signal pin is selected from a chip select pin (Chip Select pi η) or a clock enable pin (C 1 ο ck Ε η ab 1 e ρ i η ). 3. The memory module of claim 1, further comprising a pull-down resistor, the point-to-point signal pin being electrically connected to the pull-down resistor to output a low-level digital identification signal. 4. The memory module of claim 1, further comprising a pull-up resistor, the point-to-point signal pin being electrically coupled to a pull-up resistor to output a high-level digital identification signal. 5. The memory module of claim 1, wherein the core logic device is electrically connected to a north bridge wafer. 6. The memory module of claim 1, wherein the computer system reads the identification signal output by the point-to-point signal pin during a boot process. 7. The memory module of claim 1, wherein the memory module is a non-volatile memory module. 8. A core logic device having a plurality of point-to-point signal pins electrically connected to a plurality of memory modules, one of the memory modules 第15頁 1261165Page 15 1261165 體模組内儲存有一主機之開 碼’而該核心邏輯裝置係於 ^號接腳上分別讀入相對應 5亥等記憶體模組中,何者為 記憶體模組。 機程序中所需之一開機程式 該開機程序中,由該等點對點 之辨熾信號,藉此用以判斷出 該開機程式碼所儲存之該特定 里占^申請專利範圍第8項所述之核心邏輯裝置,其中該 點信號接腳係選自晶片選擇接腳(Chlp Select ph 或日寸脈致能接腳(Clock Enable pins)。 I 0 ·如申請專利範圍第8項所述之核心邏輯裝置,其中電連 $至該特定記憶體模組之點對點信號接腳 resis;〇^ 1項入一低準位之數位辨識信號,而電連接至其它記憶體 杈組之點對點信號接腳則電連接至一上拉電阻卜叫 res i s tor )而讀入一高準位之數位辨識信號。 II ·如申請專利範圍第8項所述之核心邏輯裝置,其中電連 接至該特定記憶體模組之點對點信號接腳係電連接至位於 該特定記憶體模組中之一上拉電阻(puU—up resist〇r)而 讀入一高準位之數位辨識信號,而電連接至其它記憶體模 組之點對點信號接腳則電連接至一下拉電阻(pul i_d〇wn r e s i s t o r )而讀入一低準位之數位辨識信號。 1 2 ·如申凊專利範圍第8項所述之核心邏輯裝置,其係為一 晶片組。 ^ 1 3 ·如申請專利範圍第8項所述之核心邏輯裝置,其係為一 晶片組中之一北橋晶片。The core module stores a host open code', and the core logic device is read into the corresponding memory module of the 5th and the like, respectively, and is the memory module. One of the required programs in the machine program, in the booting process, the point-to-point identification signal is used to determine that the specific code stored in the boot code is as described in item 8 of the patent application scope. The core logic device, wherein the point signal pin is selected from a chip select pin (Chlp Select ph or a Clock Enable pin). I 0 · core logic as described in claim 8 The device, wherein the electrical connection $ to the point-to-point signal pin of the specific memory module is resis; the 1^1 item enters a low-level digital identification signal, and the point-to-point signal pin electrically connected to the other memory group is electrically Connected to a pull-up resistor called res is tor) and read in the digital identification signal of a high level. II. The core logic device of claim 8, wherein the point-to-point signal pin electrically connected to the specific memory module is electrically connected to one of the pull-up resistors (puU) located in the specific memory module. -up resist〇r) and read the digital identification signal of a high level, and the point-to-point signal pin electrically connected to other memory modules is electrically connected to the pull-up resistor (pul i_d〇wn resistor) and read into one Low level digital identification signal. 1 2 The core logic device of claim 8 is a chip set. ^ 1 3 · The core logic device as described in claim 8 is a north bridge wafer in a chip set. 1261165 --1^_91104465 年 ~、申請專職® 1 * __ 1 4·如申請專利範圍第8 述之核心邏 定記憶體模組係為一非揮發性記憶體模組衣:上= 模組則為-隨機存取記憶體模組。 而其…思體 1 5. —種開機程式碼讀取方法,應用於—桉、 複數個記憶體模組之間,該核心邏輯裝置輯衣置與 等,憶體模組之複數個信號接腳,該等記;J槿组φ至, 特定記憶體模組内儲存有〆開機程序中所二之一…ρ ^ 一 碼’亚包含與對應信號接腳連接之一第—;二二私式 而Θ .貝取方法包含下列步驟: 私1 於该開機程序中,該核心邏輯裝置由誃 分別讀入相對應之辨識信號,其中只有1工;:::上 J :之一特定辨識信號係位於該第-準位:萨此:二、: 存有該開機程式碼之該特定記憶體模組;以:此判辦出儲 由該特定記憶體模組中將該開機程式碼讀出。 二::^專利範圍第15項所述之開機程式碼〜賣取方法, 八中忒核心邏輯裝置所具有電連接至該等記憶 等信號接腳皆為點對點信號接腳。 〜、、’ ^ 1 7·如'請專利範圍第1 6項所述之開機程式碼讀取方法, 其中該等點對點信號接腳係選自晶片選擇接腳(Chip Select pins)或時脈致能接腳(ci0Ck Enable pins)。 1 8·如申請專利範圍第1 5項所述之開機程式碼讀取方法, 其中電連接至該特定記憶體模組之信號接腳係電連接至位 於該特定記憶體模組中之一下拉電阻(pul 1-down r e s i s t o r )而使該核心邏輯裝置讀入一低準位之數位辨識1261165 --1^_91104465 years ~, apply for full-time® 1 * __ 1 4 · The core logical memory module of the application scope is the non-volatile memory module: upper = module For the - random access memory module. And its ... body 1 5. A boot code reading method, applied to - 桉, a plurality of memory modules, the core logic device is set up and so on, a plurality of signal connections of the memory module The foot, the record; the J槿 group φ to, the specific memory module stores one of the two in the boot program... ρ ^ one code 'sub-includes one of the corresponding signal pin connections - two The method of fetching comprises the following steps: Private 1 In the booting process, the core logic device reads the corresponding identification signal by 誃, wherein only 1 work;::: J: one of the specific identification signal systems Located at the first level: Sa this: Second, the specific memory module storing the boot code; and: the decision to store the boot code from the specific memory module. 2: The patent code of the 15th patent range is as follows: the signal connection from the core logic device of the eight-in-one is connected to the signal pins such as the memory. ~,, ' ^ 1 7 · The method of reading the boot code described in the '16 patent scope, wherein the point-to-point signal pins are selected from Chip Select pins or clocks. Can be pin (ci0Ck Enable pins). 1 8 . The method of reading a boot code according to claim 15 , wherein a signal pin electrically connected to the specific memory module is electrically connected to one of the specific memory modules. Resistor (pul 1-down resistor) causes the core logic device to read in a low level digital identification ηη 第17頁Page 17 曰 修正 >:靖專利範圍 凌,而電連接至其它記憶體模組之信號接腳則電連接至 170 / 1 η — ιΤϊή 彳古今女 J·七、、、rn» . 案號 91104465 s D〜叹工穴u ^ 〜 〜A w w电逐按主 抵電阻(pull-up resistor)而使該核心邏輯裝置讀入 j Q高準位之數位辨識信號。 其’如申請專利範圍第丨5項所述之開機程式碼讀取方法, 於^電連接至該特定記憶體模組之信號接腳係電連接至位 ;讀特定記憶體模組中之一上拉電阻(pull—up resist(3i〇 2使該核心邏輯裝置讀入一高準位之數位辨識信號,而電 連接至其它記憶體模組之信號接腳則電連接至一下拉電阻 (pull-down resistor)而使該核心邏輯裝置讀入一低準位 之數位辨識信號。 貝 -/立 20.如申請專利範圍第15項所述之開機程式碼讀取方法, 其中該核心邏輯裝置係為一晶片組。 @ 彳’ 2 1 ·如申請專利範圍第1 5項所述之開機# 4 * ^ 式碼讀取方法, 其中該核心邏輯裝置係為一晶片組中 、 τ ^ 一 ^匕#1% 片。 22·如申請專利範圍第1 5項所述之開機& 4、同曰 、 其中該特定記憶體模組係為一非揮發性工碼取方法, 它記憶體模組則為-隨機存取記憶體模組n组而其曰Revision>: The scope of the patent is Ling, and the signal pin that is electrically connected to other memory modules is electrically connected to 170 / 1 η — ιΤϊή 彳 ancient and modern female J·7, 、, rn» . Case No. 91104465 s D The sighing hole u ^ ~ ~ A ww electrically presses the pull-up resistor to cause the core logic device to read the digital identification signal of the j Q high level. The method of reading the boot code as described in item 5 of the patent application scope, the signal pin connected to the specific memory module is electrically connected to the bit; and one of the specific memory modules is read. Pull-up resistor (3i〇2 causes the core logic device to read in a high-level digital identification signal, and the signal pin electrically connected to other memory modules is electrically connected to the pull-up resistor (pull a digital identification device, wherein the core logic device reads a low-level digital identification signal, as described in claim 15, wherein the core logic device is Is a chip set. @ 彳' 2 1 · The boot code # 4 * ^ code reading method as described in claim 15 wherein the core logic device is in a chip set, τ ^ a ^ #1%片. 22· As shown in the patent application, item 15 and 5, the same memory module is a non-volatile code method, and its memory module is a random access memory module n group
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460581B (en) * 2010-12-22 2014-11-11 Via Tech Inc Dynamic multi-core microprocessor configuration discovery
CN110716756A (en) * 2019-10-15 2020-01-21 上海兆芯集成电路有限公司 Multi-grain multi-core computer platform and starting method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460581B (en) * 2010-12-22 2014-11-11 Via Tech Inc Dynamic multi-core microprocessor configuration discovery
CN110716756A (en) * 2019-10-15 2020-01-21 上海兆芯集成电路有限公司 Multi-grain multi-core computer platform and starting method thereof
CN110716756B (en) * 2019-10-15 2023-03-14 上海兆芯集成电路有限公司 Multi-grain multi-core computer platform and starting method thereof

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