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TWI257126B - Slurry and polishing method - Google Patents

Slurry and polishing method

Info

Publication number
TWI257126B
TWI257126B TW092120053A TW92120053A TWI257126B TW I257126 B TWI257126 B TW I257126B TW 092120053 A TW092120053 A TW 092120053A TW 92120053 A TW92120053 A TW 92120053A TW I257126 B TWI257126 B TW I257126B
Authority
TW
Taiwan
Prior art keywords
slurry
organic compound
cyclic organic
polishing method
oxidizer
Prior art date
Application number
TW092120053A
Other languages
Chinese (zh)
Other versions
TW200405453A (en
Inventor
Masato Fukasawa
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200405453A publication Critical patent/TW200405453A/en
Application granted granted Critical
Publication of TWI257126B publication Critical patent/TWI257126B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H10P52/403—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

Slurry contains an oxidizer, water, Ph modifier, and cyclic organic compound for enhancing the chemical polishing of polished surface. Wherein the Ph value of the slurry is 5 to 10, and the cyclic organic compound contains an imidazole structure. Using the slurry to perform an interconnect process of a semiconductor device can keep low etching rate, and increase polishing rate. Also, using the slurry can avoid the erosion and dishing phenomenon of the metal surface. Therefore, the reliability of pattern of buried metal layer can be improved.
TW092120053A 2002-07-25 2003-07-23 Slurry and polishing method TWI257126B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002216428 2002-07-25
JP2002216423 2002-07-25

Publications (2)

Publication Number Publication Date
TW200405453A TW200405453A (en) 2004-04-01
TWI257126B true TWI257126B (en) 2006-06-21

Family

ID=31190292

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092120053A TWI257126B (en) 2002-07-25 2003-07-23 Slurry and polishing method

Country Status (4)

Country Link
JP (1) JPWO2004012248A1 (en)
AU (1) AU2003248101A1 (en)
TW (1) TWI257126B (en)
WO (1) WO2004012248A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004010379A1 (en) * 2004-03-03 2005-09-22 Schott Ag Process for the production of wafers with low-defect surfaces, the use of such wafers and electronic components obtained therefrom
JP4316406B2 (en) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド Polishing composition
JP4644434B2 (en) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド Polishing composition
JP5648567B2 (en) * 2010-05-07 2015-01-07 日立化成株式会社 Polishing liquid for CMP and polishing method using the same
JP5953766B2 (en) * 2012-01-24 2016-07-20 日立化成株式会社 Polishing liquid and substrate polishing method
JP6589361B2 (en) * 2015-05-01 2019-10-16 日立化成株式会社 Abrasive, abrasive set, and substrate polishing method
EP3969639B1 (en) * 2019-05-13 2025-03-12 Ecolab Usa Inc. 1,2,4-triazolo[1,5-a] pyrimidine derivative as copper corrosion inhibitor

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
JP2000252243A (en) * 1998-12-28 2000-09-14 Hitachi Chem Co Ltd Polishing liquid for metal and polishing method using the same
JP4538109B2 (en) * 1999-02-18 2010-09-08 株式会社トッパンＴｄｋレーベル Chemical mechanical polishing composition
JP3902897B2 (en) * 1999-11-15 2007-04-11 日立化成工業株式会社 Substrate polishing method using metal polishing liquid
JP2001185514A (en) * 1999-12-27 2001-07-06 Hitachi Chem Co Ltd Cmp abrasive and method for polishing substrate
JP3841995B2 (en) * 1999-12-28 2006-11-08 Ｎｅｃエレクトロニクス株式会社 Chemical mechanical polishing slurry
JP4001219B2 (en) * 2000-10-12 2007-10-31 Ｊｓｒ株式会社 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
AU2001241190A1 (en) * 2000-03-21 2001-10-03 Wako Pure Chemical Industries, Ltd. Semiconductor wafer cleaning agent and cleaning method
JP3768402B2 (en) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 Chemical mechanical polishing slurry
JP3768401B2 (en) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 Chemical mechanical polishing slurry
JP2003188120A (en) * 2001-12-17 2003-07-04 Hitachi Chem Co Ltd Polishing liquid and polishing method for metal
CN100336179C (en) * 2002-04-30 2007-09-05 日立化成工业株式会社 Grinding liquid and grinding method
JP2004031442A (en) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd Polishing solution and polishing method
JP2004031446A (en) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd Polishing solution and polishing method

Also Published As

Publication number Publication date
TW200405453A (en) 2004-04-01
AU2003248101A1 (en) 2004-02-16
WO2004012248A1 (en) 2004-02-05
JPWO2004012248A1 (en) 2005-11-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees