TWI253961B - Cleaning device applicable in cleaning solution circulation system and capable of prolonging lifespan of filter - Google Patents
Cleaning device applicable in cleaning solution circulation system and capable of prolonging lifespan of filter Download PDFInfo
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- TWI253961B TWI253961B TW93109892A TW93109892A TWI253961B TW I253961 B TWI253961 B TW I253961B TW 93109892 A TW93109892 A TW 93109892A TW 93109892 A TW93109892 A TW 93109892A TW I253961 B TWI253961 B TW I253961B
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- cleaning
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- circulation system
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- 238000004140 cleaning Methods 0.000 title claims abstract description 100
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 39
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 30
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 229910001868 water Inorganic materials 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 5
- 239000012498 ultrapure water Substances 0.000 claims description 5
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- OSFLIFOIYKHHQK-UHFFFAOYSA-N 2-(2-fluorooxyethoxy)ethyl hypofluorite Chemical compound FOCCOCCOF OSFLIFOIYKHHQK-UHFFFAOYSA-N 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 235000010269 sulphur dioxide Nutrition 0.000 claims description 2
- 239000004291 sulphur dioxide Substances 0.000 claims description 2
- 229960002050 hydrofluoric acid Drugs 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 241000555745 Sciuridae Species 0.000 claims 1
- -1 cerium peroxide Chemical class 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- 239000011259 mixed solution Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 238000005201 scrubbing Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910003638 H2SiF6 Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005502 peroxidation Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- OMBRFUXPXNIUCZ-UHFFFAOYSA-N dioxidonitrogen(1+) Chemical compound O=[N+]=O OMBRFUXPXNIUCZ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011817 metal compound particle Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- SWURHZJFFJEBEE-UHFFFAOYSA-J tetrafluorocerium Chemical compound F[Ce](F)(F)F SWURHZJFFJEBEE-UHFFFAOYSA-J 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
1253961 五、發明說明(1) 【發明所屬之技術領域】 本發明係有關一種可提升半導體積體電路清洗製程的 過濾器壽命之技術,特別是關於一種應用在清洗液循環系 統中可延長過濾器壽命之清洗裝置。 【先前技術】 在次微米晶圓製程中,無論是薄膜沈積、高溫爐管擴 散、氧化或是蝕刻後晶圓表面處理等,都需要經過許多高 純度的化學品的清洗過程,再以超純水洗滌至最後以異丙 醇除水乾燥的步驟。 半導體洗淨以多槽洗淨為主,從6 0年代早期開始發展 的美國無線電公司(RCA)洗淨配方,一直被沿用至今日 ,雖然在各個模組中持續開發出不同的應用方式,也只限 於在化學品的比例及清洗的順序上做了些微的調整。 RC A清洗製程主要係包含有三個步驟: 1、 H 2S 0 4+ H 20 2 ( S P M),其係利用硫酸與過氧化氫生成的卡 羅酸,其強氧化性及脫水性可破壞有機物的碳氫鍵結,主 要目的是去除光阻。 2、 ΝΗ40Η + Η 20 2+Η20 ( ΑΡΜ,亦稱 SC-1或 ΗΑ),其係利用氫氧 化銨的弱鹼性活化矽晶圓及微粒子表面,使晶圓表面與微 粒子間互相排斥而達到洗淨目的,過氧化氫亦可將矽晶圓 表面氧化,藉由過氧化氫對二氧化矽的微蝕刻達到去除微 粒子的效果;此洗淨步驟之目的係在去除有機污染與粒 〇 3、 HC1 + H 20 2+H20 ( HPM,亦稱SC-2或HB),其係利用過氧化1253961 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field The present invention relates to a technique for improving the life of a filter for a semiconductor integrated circuit cleaning process, and more particularly to an extended filter for use in a cleaning liquid circulation system Life cleaning device. [Prior Art] In the sub-micron wafer process, whether it is thin film deposition, high-temperature furnace tube diffusion, oxidation or wafer surface treatment after etching, it is necessary to go through many high-purity chemical cleaning processes, and then ultra-pure The water is washed to the final step of drying with isopropyl alcohol in addition to water. Semiconductor cleaning is mainly based on multi-tank cleaning. The American Radio Company (RCA) cleaning formula, which has been developed since the early 1960s, has been in use ever since, although various applications have been continuously developed in various modules. Only minor adjustments have been made to the ratio of chemicals and the order of cleaning. The RC A cleaning process mainly consists of three steps: 1. H 2S 0 4+ H 20 2 (SPM), which is a caroic acid formed by using sulfuric acid and hydrogen peroxide. Its strong oxidizing and dehydrating properties can destroy organic matter. Hydrocarbon bonding, the main purpose is to remove the photoresist. 2, ΝΗ40Η + Η 20 2+Η20 (ΑΡΜ, also known as SC-1 or ΗΑ), which uses the weakly alkaline action of ammonium hydroxide to activate the surface of the wafer and the microparticles, so that the surface of the wafer and the microparticles are mutually exclusive. For the purpose of cleaning, hydrogen peroxide can also oxidize the surface of the crucible wafer, and the effect of removing microparticles by micro-etching of ceria by hydrogen peroxide; the purpose of this cleaning step is to remove organic pollution and particles 3 HC1 + H 20 2+H20 (HPM, also known as SC-2 or HB), which utilizes peroxidation
1253961 五、發明說明(2) 氫氧化污染的金屬,再以鹽酸與金屬離子生成可溶性氣化 物而溶解,所以此洗晶步驟之目的為去除金屬污染。 清洗製程的洗淨液係以循環方式進行,並利用過濾器 過濾以去除洗淨液中的雜質或污染。然而,隨著元件積集 度提升,半導體工業協會(SIA)對晶圓品質之規定,如 殘留金屬、陰(陽)離子、氧、有機物、微粒子等之要求 皆在逐漸提升,而於清洗液循環系統中使用之過濾器的更 換頻率也因而增加。有關過渡器的清洗方式與裝置已見於 我國專利公告第4 2 9 1 7 3號前案中,此案係利用加壓控制裝 置,並以環帽、逆止片、逆止環、過濾器等組成過濾系統 ,以進行清洗工作。但是此前案之結構複雜,且未敘述槽 内或管路之溶液成份,清洗效果十分有限。 有鑑於此,本發明提出一種應用在清洗液循環系統中 可延長過處is舞命之清洗裝置’以延長過滤器之哥命’並 提升洗淨效果。 【發明内容】 本發明之主要目的係在提供一種應用在清洗液循環系 統中可延長過濾器壽命之清洗裝置,其係在清洗液循環系 統上再增設一清洗裝置,以氫氟酸、過氧化氫與鹽酸混合 液來清洗過濾器,以有效去除二氧化矽、矽及其化合物、 金屬及其化合物、有機物類型等的微粒,並藉此得到較好 的清洗效果,進而延長過濾器之使用壽命。 本發明之另一目的係在利用簡單的結構設計,達到延 長SC-1清洗循環系統中之過濾器的使用壽命與提升洗淨效1253961 V. INSTRUCTIONS (2) The metal contaminated with hydrogen hydroxide is dissolved by the formation of soluble gasification by hydrochloric acid and metal ions. Therefore, the purpose of this washing step is to remove metal contamination. The cleaning process of the cleaning process is carried out in a circulating manner and filtered by a filter to remove impurities or contamination in the cleaning solution. However, as component integration increases, the requirements of the Semiconductor Industry Association (SIA) for wafer quality, such as residual metals, negative (cationic) ions, oxygen, organic matter, and fine particles, are gradually increasing. The frequency of replacement of the filters used in the circulation system is thus also increased. The cleaning method and device for the transition device have been found in the previous case of China Patent Publication No. 4 2 9 1 7 3, which uses a pressure control device and uses a ring cap, a backstop, a backstop, a filter, etc. A filter system is formed for cleaning work. However, the structure of the previous case is complicated, and the solution composition in the tank or the pipeline is not described, and the cleaning effect is very limited. In view of the above, the present invention proposes a cleaning device which can be used in the cleaning liquid circulation system to extend the life of the device to extend the life of the filter and to improve the cleaning effect. SUMMARY OF THE INVENTION The main object of the present invention is to provide a cleaning device for extending the life of a filter in a cleaning liquid circulation system, which is further provided with a cleaning device on the cleaning liquid circulation system, with hydrofluoric acid and peroxidation. A mixture of hydrogen and hydrochloric acid to clean the filter to effectively remove particles of cerium oxide, cerium and its compounds, metals and their compounds, organic types, etc., and thereby obtain a better cleaning effect, thereby prolonging the service life of the filter . Another object of the present invention is to achieve a prolonged filter life and improved cleaning efficiency in an SC-1 cleaning cycle system using a simple structural design.
1253961 五、發明說明(3) 果之功效者。 為達到上述目的,本發明其係在一清洗液循環系統中 增設一清洗裝置,此清洗裝置包括一第二容置槽,其内係 安裝有一氫氟酸、過氧化氫及鹽酸的混合液,此第二容置 槽係利用管路連接裝設在清洗液循環系統之二控制閥上, 並利用一第二泵使第二容置槽内之混合液在管路中流動循 環而流經清洗液循環系統中之過濾器,以有效洗淨該過濾 器。 底下藉由具體實施例配合所附的圖式詳加說明,當更 容易瞭解本發明之目的、技術内容、特點及其所達成之功 效。 【實施方式】 本發明係在一清洗液循環系統上再增設一清洗裝置, 並利用此清洗裝置内之氫氟酸、過氧化氫與鹽酸混合液來 清洗過濾器,以有效去除二氧化矽、矽及其化合物、金屬 及其化合物、有機物類型等的微粒或雜質。 請參閱第一圖所示,其係在一用於半導體積體電路 RCA清洗製程中清洗液循環系統上另外增設一清洗裝置之 示意圖,此清洗液循環系統包括一第一容置槽1 0,其内係 放置有氫氧化銨(NH4OH)、過氧化氫(Η2〇2>和超純水 (D · I · w a t e r)的混合液(S C - 1),以作為清洗液使用; 並利用管路1 2分別連接一加熱器1 4、一第一控制閥1 6、一 過濾器1 8、一第二控制閥2 0及一第一泵2 2,使其形成一可 供清洗液流通循環之迴路,以利用第一泵2 2使第一容置槽1253961 V. Description of invention (3) The effect of the fruit. In order to achieve the above object, the present invention further comprises a cleaning device in a cleaning liquid circulation system, the cleaning device comprising a second receiving groove, wherein a mixture of hydrofluoric acid, hydrogen peroxide and hydrochloric acid is installed therein. The second accommodating tank is installed on the two control valves of the cleaning liquid circulation system by using a pipeline connection, and the second mixture pump is used to flow and circulate the mixture in the second accommodating tank through the cleaning. A filter in the liquid circulation system to effectively clean the filter. The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the embodiments and the accompanying drawings. [Embodiment] The present invention further adds a cleaning device to a cleaning liquid circulation system, and uses the mixture of hydrofluoric acid, hydrogen peroxide and hydrochloric acid in the cleaning device to clean the filter to effectively remove the cerium oxide. Particles or impurities of ruthenium and its compounds, metals and their compounds, organic types, and the like. Referring to the first figure, a schematic diagram of a cleaning device is further disposed on the cleaning liquid circulation system for the semiconductor integrated circuit RCA cleaning process. The cleaning liquid circulation system includes a first receiving groove 10, A mixture of ammonium hydroxide (NH4OH), hydrogen peroxide (Η2〇2> and ultrapure water (D·I. water) (SC-1) is placed in the interior for use as a cleaning solution; 1 2 is connected to a heater 1 4, a first control valve 16 , a filter 18 , a second control valve 20 and a first pump 2 2 to form a circulation of the cleaning liquid. a circuit to utilize the first pump 2 2 to make the first receiving groove
1253961 五、發明說明(4) 1 0内之清洗液流動循環而經由該過濾器濾除清洗液之雜質 ,例如石夕、二氧化石夕、金屬、有機物、微塵等,以及藉由 該加熱器1 4之加熱,此使清洗液維持2 5〜9 0°C的溫度,; 且該二控制閥1 6、2 0係分別位於過濾器1 8二側之管路1 2上 ,以藉由自動計時器或人工方式的操作來控制清洗液之流 通或不流通。其中,在第一控制閥1 6與第二控制閥2 0上在 裝設另一旁路之清洗裝置2 4,其係由一第二容置槽2 6與一 第二泵2 8所組成,在第二容置槽2 6内係安裝有一氫氟酸、 過氧化氫及鹽酸的混合液,第二容置槽2 6係利用管路 1 2 ’連接裝設在清洗液循環系統之二控制閥1 6、2 0上,並 可利用此二控制閥1 6、2 0控制該混合液之流動與否,且第 二容置槽2 6内之混合液係透過第二泵2 8在管路1 2 ’中流動 循環而流經該二控制閥1 6、2 0之間的過濾器1 8。 在上述第二容置槽2 6内之混合液中之氫氟酸、過氧化 氮及鹽酸均為半導體級(semiconductor grade)者,其 中之氫氟酸係為稀釋的氫氟酸,其氫氟酸與水之稀釋比例 係介於1 : 1 0至1 ·· 1 0 0之間。此外,第二泵2 8之材質係為 能抗該氫氟酸、過氧化氳及鹽酸混合液的泵浦;而上述清 洗液循環系統與清洗裝置2 4所使用之管路1 2、1 2 ’的材質 係為聚偏二氟乙烯(PVDF)、過氟氧乙烯醚(PFA)或是 聚醚醚酮(PEEK)。 當上述之清洗液循環系統中的清洗液需要更換時,請 參閱第二圖所示,先將第一容置槽1 0内之清洗液,氫氧化 銨、過氧化氫與超純水的混合液排放掉,再添加超純水於1253961 V. INSTRUCTION OF THE INVENTION (4) The cleaning liquid in the 10 is flow-circulated and the impurities of the cleaning liquid, such as the stone, the sulphur dioxide, the metal, the organic matter, the fine dust, etc., are filtered through the filter, and the heater is used. Heating of 14 to maintain the temperature of the cleaning liquid at a temperature of 2 5 to 90 ° C; and the two control valves 16 and 20 are respectively located on the pipe 1 2 on both sides of the filter 18 to Automatic timer or manual operation to control the flow or non-circulation of the cleaning fluid. Wherein, the first control valve 16 and the second control valve 20 are provided with a further bypass cleaning device 24, which is composed of a second receiving groove 26 and a second pump 28. A second mixture of hydrofluoric acid, hydrogen peroxide and hydrochloric acid is installed in the second accommodating tank 26, and the second accommodating tank 26 is connected to the cleaning liquid circulation system by the pipeline 1 2 ' The valve 16 is connected to the second pump 28 in the tube. The flow in the road 1 2 ' flows through the filter 18 between the two control valves 16 , 20 . The hydrofluoric acid, the nitrogen peroxide and the hydrochloric acid in the mixed liquid in the second accommodating tank 26 are all semiconductor grades, wherein the hydrofluoric acid is diluted hydrofluoric acid, and the hydrofluoric acid thereof The dilution ratio of acid to water is between 1:10 and 1··100. In addition, the material of the second pump 28 is a pump capable of resisting the mixture of hydrofluoric acid, barium peroxide and hydrochloric acid; and the pipe used in the cleaning liquid circulation system and the cleaning device 24, 2, 1 2 'The material is polyvinylidene fluoride (PVDF), perfluorooxyethylene ether (PFA) or polyetheretherketone (PEEK). When the cleaning liquid in the above cleaning liquid circulation system needs to be replaced, please refer to the second figure, firstly mix the cleaning liquid in the first accommodating tank 10, ammonium hydroxide, hydrogen peroxide and ultrapure water. The liquid is drained, and then ultrapure water is added.
1253961 五、發明說明(5) 第一容置槽1 0内;然後啟動第一泵2 2並打開控制閥1 6、2 0 ,使管路1 2形成通路來清洗此循環系統。此時,加熱器1 4 暫時不加熱,只保持管路流通,另一旁路之清洗裝置2 4的 第二容置槽2 6與第二泵2 8此時為閒置狀態。 而欲清洗該清洗液循環系統中之過濾器1 8時,請參閱 第三圖所示,令第一泵22、加熱器14與第一容置槽10處於 閒置狀態;啟動第二泵2 8,並打開第一控制閥1 6與第二控 制閥2 0而利用管路1 2 ’形成另一通路,並以第二容置槽2 6 内之氫氟酸、過氧化氫及鹽酸的混合液來清洗過濾器1 8, 以洗淨該過濾、器1 8。 _ 其中,氫氟酸會與清洗液中的二氧化矽反應,產生四 氟化矽氣體;過氧化氫可氧化清洗液中的矽及非活性金屬 粒子,分解輕的有機物粒子;鹽酸可溶解活性金屬和金屬 化合物的粒子。因此,清洗液經過第二容置槽之後,粒子 大量減少;爾後清洗液經過濾器時,粒子數量小,過濾器 被阻塞的機率因而降低,使得過濾器的使用壽命自然得以 延長。且清洗液的雜質部份被分解,清洗液再次流入第一 容置槽時,洗淨效果確實可以有效提升。 本發明以氫氟酸、過氧化氫及鹽酸混合液提升過濾器 之使用壽命,此混合液的化學機制如下所述: 4 1、 氫氟酸溶解二氧化矽: ^1253961 V. INSTRUCTION DESCRIPTION (5) The first accommodating tank 10 is inside; then the first pump 2 2 is activated and the control valves 16 6 and 20 are opened to form a passage for the pipeline 12 to clean the circulation system. At this time, the heater 14 is temporarily not heated, and only the pipeline is kept flowing, and the second accommodating tank 26 and the second pump 28 of the other bypass cleaning device 24 are in an idle state at this time. When the filter 18 in the cleaning liquid circulation system is to be cleaned, please refer to the third figure, so that the first pump 22, the heater 14 and the first accommodating tank 10 are in an idle state; and the second pump is activated. And opening the first control valve 16 and the second control valve 20 to form another passage by the pipe 1 2 ′, and mixing the hydrofluoric acid, hydrogen peroxide and hydrochloric acid in the second accommodating groove 26 The filter is used to clean the filter 18 to clean the filter. _ wherein hydrofluoric acid reacts with cerium oxide in the cleaning solution to produce cerium tetrafluoride gas; hydrogen peroxide oxidizes cerium and inactive metal particles in the cleaning solution to decompose light organic particles; hydrochloric acid soluble activity Particles of metals and metal compounds. Therefore, after the cleaning liquid passes through the second accommodating tank, the particles are greatly reduced; when the cleaning liquid passes through the filter, the particle number is small, and the probability of the filter being blocked is lowered, so that the life of the filter is naturally prolonged. Moreover, the impurity portion of the cleaning liquid is decomposed, and when the cleaning liquid flows into the first receiving groove again, the cleaning effect can be effectively improved. The invention improves the service life of the filter by using a mixture of hydrofluoric acid, hydrogen peroxide and hydrochloric acid. The chemical mechanism of the mixture is as follows: 4 1. Hydrofluoric acid dissolves cerium oxide: ^
Si02+HF-> H2SiF6+2H20 H2SiF6 (溶液)-> SiF4(氣體)+ 2HF(液體) 2、 過氧化氫在酸性溶液氧化矽和非活性金屬,並分解有Si02+HF-> H2SiF6+2H20 H2SiF6 (solution)-> SiF4 (gas) + 2HF (liquid) 2. Hydrogen peroxide oxidizes ruthenium and inactive metals in an acidic solution, and decomposes
第10頁 1253961 五、發明說明(6) 機粒子:Page 10 1253961 V. Description of invention (6) Machine particles:
Si-> Si ] r4eSi-> Si ] r4e
Si “+2H20- Si02+41T,其係放熱反應 A G = - 3 4 Ο Κ J / m ο 1 e H 20 2+ 2 HH2e-> 2 Η 20 前三反應式之綜合反應為S l + 2 H 20 r> S l 0 2+ 2 Η 20 Cu (固態)—C W溶液)+ 2e,吸熱反應Δ G二65.5 KJ/m〇le 以上之綜合反應為 (:11(固態)+}12〇2+21](溶液)-[:112++2[12〇,此反應之總熱量 Δ G=-275 KJ/mole 3、鹽酸溶解金屬化合物粒子:Si "+2H20- Si02+41T, which is an exothermic reaction AG = - 3 4 Ο Κ J / m ο 1 e H 20 2+ 2 HH2e-> 2 Η 20 The combined reaction of the first three reactions is S l + 2 H 20 r> S l 0 2+ 2 Η 20 Cu (solid)-CW solution) + 2e, endothermic reaction Δ G two 65.5 KJ/m〇le The above comprehensive reaction is (: 11 (solid) +} 12 〇 2 +21](Solution)-[:112++2[12〇, total heat of the reaction Δ G=-275 KJ/mole 3, hydrochloric acid dissolved metal compound particles:
Mx0y+2yH^ xM(2y/xH+yH20 M(0H) x+xH“ MxH0. 5xH20 綜上所述,本發明在清洗液循環系統增設一清洗裝置 的設計,可有效去除二氧化矽、矽及其化合物、金屬及其 化合物、有機物類型等的微粒,並藉此得到較好的清洗效 果,以延長過濾器之使用壽命。因此,本發明係利用簡單 的結構設計,達到延長SC- 1清洗循環系統中之過濾器的使 用壽命與提升洗淨效果之功效者。 以上所述之實施例僅係為說明本發明之技術思想及特 點,其目的在使熟習此項技藝之人士能夠瞭解本發明之内 容並據以實施,當不能以之限定本發明之專利範圍,即大 凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵 蓋在本發明之專利範圍内。 【圖號說明】Mx0y+2yH^ xM(2y/xH+yH20 M(0H) x+xH" MxH0. 5xH20 In summary, the invention has a design of a cleaning device in the cleaning liquid circulation system, which can effectively remove cerium oxide, strontium and Particles of compounds, metals and their compounds, organic types, etc., and thereby obtain a better cleaning effect to extend the service life of the filter. Therefore, the present invention utilizes a simple structural design to extend the SC-1 cleaning cycle. The effect of the life of the filter in the system and the effect of improving the cleaning effect. The embodiments described above are merely illustrative of the technical idea and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the present invention. The contents are also implemented, and the scope of the invention is not limited thereto, that is, the equivalent changes or modifications made by the spirit of the invention should be covered by the scope of the invention.
第11頁 1253961Page 11 1253961
第12頁 1253961 圖式簡單說明 第一圖為本發明之清洗裝置裝設在清洗液循環系統中的結 構示意圖。 第二圖為本發明於清洗液循環系統中之清洗液需要更換時 的結構示意圖。 第三圖為利用本發明之清洗裝置在清洗過濾器的結構示意 圖。 ΟPage 12 1253961 Brief Description of the Drawing The first figure is a schematic view showing the structure of the cleaning device of the present invention installed in the cleaning liquid circulation system. The second figure is a schematic view of the structure of the cleaning liquid in the cleaning liquid circulation system of the present invention. The third figure is a schematic view showing the structure of the cleaning filter using the cleaning device of the present invention. Ο
第13頁Page 13
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| TW93109892A TWI253961B (en) | 2004-04-09 | 2004-04-09 | Cleaning device applicable in cleaning solution circulation system and capable of prolonging lifespan of filter |
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