TW200533429A - Cleaning device implemented in a cleaning liquid circulation system capable of extending filter lifespan - Google Patents
Cleaning device implemented in a cleaning liquid circulation system capable of extending filter lifespan Download PDFInfo
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- TW200533429A TW200533429A TW93109892A TW93109892A TW200533429A TW 200533429 A TW200533429 A TW 200533429A TW 93109892 A TW93109892 A TW 93109892A TW 93109892 A TW93109892 A TW 93109892A TW 200533429 A TW200533429 A TW 200533429A
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- circulation system
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- cleaning liquid
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- 238000004140 cleaning Methods 0.000 title claims abstract description 108
- 239000007788 liquid Substances 0.000 title claims abstract description 62
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 38
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 36
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001868 water Inorganic materials 0.000 claims description 6
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 5
- 239000012498 ultrapure water Substances 0.000 claims description 5
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- OSFLIFOIYKHHQK-UHFFFAOYSA-N 2-(2-fluorooxyethoxy)ethyl hypofluorite Chemical compound FOCCOCCOF OSFLIFOIYKHHQK-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 1
- -1 matter Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000002245 particle Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 229910003638 H2SiF6 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011817 metal compound particle Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
200533429 五、發明說明(1) 【發明所屬之技術領域】 本發明係有關一種可提升半導體積體電路清洗製程的 過濾器壽命之技術,特別是關於一種應用在清洗液循環系 統中可延長過濾器壽命之清洗裝置。 【先前技術】 在次微米晶圓製程中,無論是薄膜沈積、高溫爐管擴 散、氧化或是#刻後晶圓表面處理等,都需要經過許多高 純度的化學品的清洗過程,再以超純水洗滌至最後以異丙 醇除水乾燥的步驟。 半導體洗淨以多槽洗淨為主,從6 0年代早期開始發展 的美國無線電公司(RCA)洗淨配方,一直被沿用至今日 ,雖然在各個模組中持續開發出不同的應用方式,也只限 於在化學品的比例及清洗的順序上做了些微的調整。 RC A清洗製程主要係包含有三個步驟: 1、 H 2S 0 4+ Η 20 2 ( S PM),其係利用硫酸與過氧化氫生成的卡 羅酸,其強氧化性及脫水性可破壞有機物的碳氫鍵結,主 要目的是去除光阻。 2、 ΝΗ40Η + Η 20 2+Η20 ( ΑΡΜ,亦稱 SC-1或 ΗΑ),其係利用氫氧 化銨的弱鹼性活化矽晶圓及微粒子表面,使晶圓表面與微 粒子間互相排斥而達到洗淨目的,過氧化氫亦可將矽晶圓 表面氧化,藉由過氧化氫對二氧化矽的微蝕刻達到去除微 粒子的效果;此洗淨步驟之目的係在去除有機污染與粒 子。 3、 HC1+H 20 2+H20 ( ΗΡΜ,亦稱SC-2或ΗΒ),其係利用過氧化200533429 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a technology that can improve the life of a filter of a semiconductor integrated circuit cleaning process, and particularly relates to a filter that can be extended in a cleaning liquid circulation system. Lifetime cleaning device. [Previous technology] In the sub-micron wafer process, whether it is thin film deposition, high-temperature furnace tube diffusion, oxidation, or wafer surface treatment after #etching, it needs to go through a lot of high-purity chemical cleaning processes, The step of washing with pure water and finally drying with isopropyl alcohol. Semiconductor cleaning is mainly multi-tank cleaning. The American Radio Corporation (RCA) cleaning formula, which has been developed since the early 1960s, has been used to this day. Although different application methods have been continuously developed in each module, Only a few adjustments were made in the proportion of chemicals and the order of cleaning. The RC A cleaning process mainly includes three steps: 1. H 2S 0 4+ Η 20 2 (S PM), which is a caroic acid produced by sulfuric acid and hydrogen peroxide. Its strong oxidizing and dehydrating properties can destroy organic matter. The main purpose of carbon-hydrogen bonding is to remove photoresist. 2. ΝΗ40Η + Η 20 2 + Η20 (APM, also known as SC-1 or ΗΑ), which uses the weak alkali of ammonium hydroxide to activate the surface of silicon wafers and particles, so that the wafer surface and the particles repel each other to reach For the purpose of cleaning, hydrogen peroxide can also oxidize the surface of the silicon wafer, and the micro-etching of silicon dioxide by hydrogen peroxide can achieve the effect of removing particles; the purpose of this cleaning step is to remove organic pollution and particles. 3. HC1 + H 20 2 + H20 (HPPM, also known as SC-2 or HB), which uses peroxide
第6頁 200533429 五、發明說明(2) 氫氧化污染的金屬,再以鹽酸與金屬離子生成可溶性氯化 物而溶解,所以此洗晶步驟之目的為去除金屬污染。 清洗製程的洗淨液係以循環方式進行,並利用過濾器 過濾以去除洗淨液中的雜質或污染。然而,隨著元件積集 度提升,半導體工業協會(SIA)對晶圓品質之規定,如 殘留金屬、陰(陽)離子、氧、有機物、微粒子等之要求 皆在逐漸提升,而於清洗液循環系統中使用之過濾器的更 換頻率也因而增加。有關過渡器的清洗方式與裝置已見於 我國專利公告第4 2 9 1 7 3號前案中,此案係利用加壓控制裝 置,並以環帽、逆止片、逆止環、過濾器等組成過濾系統 ,以進行清洗工作。但是此前案之結構複雜,且未敘述槽 内或管路之溶液成份,清洗效果十分有限。 有鑑於此,本發明提出一種應用在清洗液循環系統中 可延長過濾器壽命之清洗裝置,以延長過濾、器之壽命,並 提升洗淨效果。 【發明内容】 本發明之主要目的係在提供一種應用在清洗液循環系 統中可延長過濾器壽命之清洗裝置,其係在清洗液循環系 統上再增設一清洗裝置,以氫氟酸、過氧化氫與鹽酸混合 液來清洗過濾器,以有效去除二氧化矽、矽及其化合物、 金屬及其化合物、有機物類型等的微粒,並藉此得到較好 的清洗效果,進而延長過濾器之使用壽命。 本發明之另一目的係在利用簡單的結構設計,達到延 長SC-1清洗循環系統中之過濾器的使用壽命與提升洗淨效Page 6 200533429 V. Description of the invention (2) The metal contaminated by hydroxide is dissolved with hydrochloric acid and metal ions to form soluble chloride and dissolved, so the purpose of this crystal washing step is to remove metal contamination. The cleaning liquid in the cleaning process is performed in a cyclic manner, and filtered by a filter to remove impurities or contamination in the cleaning liquid. However, with the increase of component accumulation, the requirements of the Semiconductor Industry Association (SIA) on wafer quality, such as residual metal, anion (anion) ions, oxygen, organics, particles, etc., are gradually increasing, and cleaning fluid The frequency of replacement of the filters used in the circulation system has increased accordingly. The cleaning method and device of the transition device have been found in the previous case of China Patent Bulletin No. 4 2 193, this case uses a pressure control device, and uses a ring cap, a check piece, a check ring, a filter, etc. Form a filtration system for cleaning. However, the structure of the previous case is complicated, and the composition of the solution in the tank or pipeline is not described, and the cleaning effect is very limited. In view of this, the present invention proposes a cleaning device which can be used to extend the life of a filter in a cleaning liquid circulation system, so as to extend the life of the filter and the filter and improve the cleaning effect. [Summary of the invention] The main purpose of the present invention is to provide a cleaning device which can be used in a cleaning liquid circulation system to extend the life of the filter. The cleaning device is further provided with a cleaning device on the cleaning liquid circulation system. Hydrogen and hydrochloric acid mixed liquid to clean the filter to effectively remove particles of silicon dioxide, silicon and its compounds, metals and their compounds, organic types, etc., and thereby obtain a better cleaning effect, thereby extending the life of the filter . Another object of the present invention is to use a simple structure design to extend the service life of the filter in the SC-1 cleaning cycle system and improve the cleaning effect.
200533429 五、發明說明(3) 果之功效者。 為達到上述目的,本發明其係在一清洗液循環系統中 增設一清洗裝置,此清洗裝置包括一第二容置槽,其内係 安裝有一氫氟酸、過氧化氫及鹽酸的混合液,此第二容置 槽係利用管路連接裝設在清洗液循環系統之二控制閥上, 並利用一第二泵使第二容置槽内之混合液在管路中流動循 環而流經清洗液循環系統中之過濾器,以有效洗淨該過濾 器。 底下藉由具體實施例配合所附的圖式詳加說明,當更 容易瞭解本發明之目的、技術内容、特點及其所達成之功 效。 【實施方式】 本發明係在一清洗液循環系統上再增設一清洗裝置, 並利用此清洗裝置内之氫氟酸、過氧化氫與鹽酸混合液來 清洗過濾器,以有效去除二氧化矽、矽及其化合物、金屬 及其化合物、有機物類型等的微粒或雜質。 請參閱第一圖所示,其係在一用於半導體積體電路 RCA清洗製程中清洗液循環系統上另外增設一清洗裝置之 示意圖,此清洗液循環系統包括一第一容置槽1 0,其内係 放置有氫氧化銨(NH 40H)、過氧化氫(Η 20 〇和超純水 (D · I · w a t e r)的混合液(S C - 1),以作為清洗液使用; 並利用管路1 2分別連接一加熱器1 4、一第一控制閥1 6、一 過濾器1 8、一第二控制閥2 0及一第一泵2 2,使其形成一可 供清洗液流通循環之迴路,以利用第一泵2 2使第一容置槽200533429 V. Description of the invention (3) The effect of fruit. In order to achieve the above object, the present invention adds a cleaning device to a cleaning liquid circulation system. The cleaning device includes a second containing tank, and a mixed solution of hydrofluoric acid, hydrogen peroxide, and hydrochloric acid is installed therein. The second receiving tank is connected to the second control valve of the cleaning liquid circulation system by using a pipeline connection, and a second pump is used to circulate the mixed liquid in the second receiving tank through the pipeline to flow through the cleaning. Filter in the liquid circulation system to effectively clean the filter. In the following, detailed descriptions will be made with specific embodiments and accompanying drawings to make it easier to understand the purpose, technical content, features and functions of the present invention. [Embodiment] The present invention is to add a cleaning device to a cleaning liquid circulation system, and use a mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid in the cleaning device to clean the filter to effectively remove silicon dioxide, Particles or impurities of silicon and its compounds, metals and their compounds, organic types, etc. Please refer to the first figure, which is a schematic diagram of adding a cleaning device to a cleaning liquid circulation system for a semiconductor integrated circuit RCA cleaning process. The cleaning liquid circulation system includes a first receiving tank 10, A mixed liquid (SC-1) of ammonium hydroxide (NH 40H), hydrogen peroxide (Η200) and ultrapure water (D · I · water) is placed in the system as a cleaning solution; and a pipeline is used. 1 2 Connect a heater 1 4, a first control valve 16, a filter 18, a second control valve 20 and a first pump 22 respectively, so as to form a circulation for cleaning liquid circulation. Circuit to make the first receiving tank with the first pump 2 2
第8頁 200533429 五、發明說明(4) 1 0内之清洗液流動循環而經由該過濾器濾除清洗液之雜質 ,例如矽、二氧化矽、金屬、有機物、微塵等,以及藉由 該加熱器1 4之加熱,此使清洗液維持2 5〜9 0°C的溫度,; 且該二控制閥1 6、2 0係分別位於過濾器1 8二側之管路1 2上 ,以藉由自動計時器或人工方式的操作來控制清洗液之流 通或不流通。其中,在第一控制閥1 6與第二控制閥2 0上在 裝設另一旁路之清洗裝置24,其係由一第二容置槽2 6與一 第二泵2 8所組成,在第二容置槽2 6内係安裝有一氫氟酸、 過氧化氫及鹽酸的混合液,第二容置槽2 6係利用管路 1 2 ’連接裝設在清洗液循環系統之二控制閥1 6、2 0上,並 可利用此二控制閥1 6、2 0控制該混合液之流動與否,且第 二容置槽2 6内之混合液係透過第二泵2 8在管路1 2 ’中流動 循環而流經該二控制閥1 6、2 0之間的過濾器1 8。 在上述第二容置槽2 6内之混合液中之氫氟酸、過氧化 氫及鹽酸均為半導體級(semiconductor grade)者,其 中之氫氟酸係為稀釋的氫氟酸,其氫氟酸與水之稀釋比例 係介於1 : 1 0至1 : 1 0 0之間。此外,第二泵2 8之材質係為 能抗該氫氟酸、過氧化氫及鹽酸混合液的泵浦;而上述清 洗液循環系統與清洗裝置2 4所使用之管路1 2、1 2 ’的材質 係為聚偏二氟乙烯(PVDF)、過氟氧乙烯醚(PFA)或是 聚醚醚酮(PEEK)。 當上述之清洗液循環系統中的清洗液需要更換時,請 參閱第二圖所示,先將第一容置槽1 0内之清洗液,氫氧化 錢、過氧化氫與超純水的混合液排放掉,再添加超純水於Page 8 200533429 V. Description of the invention (4) The cleaning liquid in 10 flows and circulates through the filter to remove impurities from the cleaning liquid, such as silicon, silicon dioxide, metal, organic matter, dust, etc., and by the heating The heating of the device 14 keeps the cleaning liquid at a temperature of 25 ~ 90 ° C, and the two control valves 16 and 20 are respectively located on the lines 12 on the two sides of the filter 18, so that Automatic timer or manual operation to control the circulation or non-circulation of the cleaning solution. Among them, another bypass cleaning device 24 is installed on the first control valve 16 and the second control valve 20, which is composed of a second receiving tank 26 and a second pump 28. A mixed liquid of hydrofluoric acid, hydrogen peroxide and hydrochloric acid is installed in the second receiving tank 26, and the second receiving tank 2 6 is connected to the second control valve installed in the cleaning liquid circulation system by using a pipe 12 ' 16 and 20, and can use the two control valves 16 and 20 to control the flow of the mixed liquid, and the mixed liquid in the second holding tank 26 is through the second pump 28 in the pipeline 1 2 ′ circulates through the filter 18 between the two control valves 16 and 20. Hydrofluoric acid, hydrogen peroxide, and hydrochloric acid in the mixed liquid in the second holding tank 26 above are all semiconductor grades, and the hydrofluoric acid is a diluted hydrofluoric acid, and the hydrofluoric acid is The dilution ratio of acid to water is between 1:10 and 1: 100. In addition, the material of the second pump 28 is a pump capable of resisting the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid; and the above-mentioned cleaning liquid circulation system and cleaning device 2 4 are used in the pipeline 1 2, 1 2 The material is made of polyvinylidene fluoride (PVDF), perfluorooxyethylene ether (PFA) or polyetheretherketone (PEEK). When the cleaning liquid in the above-mentioned cleaning liquid circulation system needs to be replaced, please refer to the second figure. First, the cleaning liquid in the first storage tank 10 is mixed with hydrogen hydroxide, hydrogen peroxide and ultrapure water. Drain the liquid and add ultrapure water to
200533429 五、發明說明(5) 第一容置槽1 0内;然後啟動第一泵2 2並打開控制閥1 6、2 0 ,使管路1 2形成通路來清洗此循環系統。此時,加熱器1 4 暫時不加熱,只保持管路流通,另一旁路之清洗裝置2 4的 第二容置槽2 6與第二泵2 8此時為閒置狀態。 而欲清洗該清洗液循環系統中之過濾器1 8時,請參閱 第三圖所示,令第一泵22、加熱器14與第一容置槽10處於 閒置狀態;啟動第二泵2 8,並打開第一控制閥1 6與第二控 制閥2 0而利用管路1 2 ’形成另一通路,並以第二容置槽2 6 内之氫氟酸、過氧化氫及鹽酸的混合液來清洗過濾器1 8, 以洗淨該過濾器1 8。 其中,氫氟酸會與清洗液中的二氧化矽反應,產生四 氟化矽氣體;過氧化氫可氧化清洗液中的矽及非活性金屬 粒子,分解輕的有機物粒子;鹽酸可溶解活性金屬和金屬 化合物的粒子。因此,清洗液經過第二容置槽之後,粒子 大量減少;爾後清洗液經過濾器時,粒子數量小,過濾器 被阻塞的機率因而降低,使得過濾器的使用壽命自然得以 延長。且清洗液的雜質部份被分解,清洗液再次流入第一 容置槽時,洗淨效果確實可以有效提升。 本發明以氫氟酸、過氧化氫及鹽酸混合液提升過濾器 之使用壽命,此混合液的化學機制如下所述: 1、 氫氟酸溶解二氧化矽:200533429 V. Description of the invention (5) Inside the first receiving tank 10; then start the first pump 22 and open the control valves 16 and 20 so that the pipeline 12 forms a passage to clean the circulation system. At this time, the heater 1 4 is temporarily not heated, and only the pipeline is kept in circulation. The second receiving tank 26 and the second pump 28 of the other bypass cleaning device 2 4 are in an idle state at this time. When you want to clean the filter 18 in the cleaning liquid circulation system, please refer to the third figure to make the first pump 22, the heater 14 and the first storage tank 10 in an idle state; start the second pump 2 8 And open the first control valve 16 and the second control valve 20 to form another passage by using the pipeline 12 ′, and use a mixture of hydrofluoric acid, hydrogen peroxide and hydrochloric acid in the second accommodation tank 26. Liquid to clean the filter 18 to clean the filter 18. Among them, hydrofluoric acid will react with silicon dioxide in the cleaning solution to generate silicon tetrafluoride gas; hydrogen peroxide can oxidize silicon and inactive metal particles in the cleaning solution to decompose light organic particles; hydrochloric acid can dissolve active metals And particles of metal compounds. Therefore, after the cleaning liquid passes through the second containing tank, particles are greatly reduced; when the cleaning liquid passes through the filter, the number of particles is small, and the probability of the filter being blocked is reduced, so that the service life of the filter is naturally extended. And the impurity part of the cleaning liquid is decomposed, and when the cleaning liquid flows into the first holding tank again, the cleaning effect can be effectively improved. The invention uses a hydrofluoric acid, hydrogen peroxide and hydrochloric acid mixed liquid to increase the service life of the filter. The chemical mechanism of this mixed liquid is as follows: 1. Hydrofluoric acid dissolves silicon dioxide:
Si02+HF-> H2SiF6+2H20 H2SiF6 (溶液)-> SiF4(氣體)+ 2HF (液體) 2、 過氧化氫在酸性溶液氧化矽和非活性金屬,並分解有Si02 + HF- > H2SiF6 + 2H20 H2SiF6 (solution)-> SiF4 (gas) + 2HF (liquid) 2. Hydrogen peroxide oxidizes silicon and inactive metals in acidic solutions and decomposes
第10頁 200533429 五、發明說明(6) 機粒子:Page 10 200533429 V. Description of the invention (6) Organic particles:
Si- Si 1 +4eSi- Si 1 + 4e
Si 4Η2Η2α- Si02+4H+,其係放熱反應△ G = - 3 4 0 K J / m ο 1 e H2〇2+2HH2e-> 2H2〇 前三反應式之綜合反應為S l + 2 H 20 2— S i 0 2+ 2 H 20 C u (固態)—C u 2+(溶液)+ 2e—,吸熱反應 A G = 65.5 KJ/mole 以上之綜合反應為 (:1](固態)+1]2〇2+211—(溶液)—(:112++2[120,此反應之總熱量 Δ G=-275 KJ/mole 3、鹽酸溶解金屬化合物粒子:Si 4Η2Η2α- Si02 + 4H +, its exothermic reaction △ G =-3 4 0 KJ / m ο 1 e H2〇2 + 2HH2e- > 2H2〇 The comprehensive reaction of the first three reaction formulas is S l + 2 H 20 2— S i 0 2+ 2 H 20 C u (solid state) —C u 2+ (solution) + 2e—, the endothermic reaction AG = 65.5 KJ / mole The above comprehensive reaction is (: 1) (solid state) +1] 2. 2 + 211— (solution) — (: 112 ++ 2 [120, total heat of this reaction Δ G = -275 KJ / mole 3. Hydrochloric acid dissolves metal compound particles:
Mx0y+2yH^ xM(2y/x)++yH20 Μ(0Η) x+x卜 Mx++0. 5xH20 綜上所述,本發明在清洗液循環系統增設一清洗裝置 的設計,可有效去除二氧化矽、矽及其化合物、金屬及其 化合物、有機物類型等的微粒,並藉此得到較好的清洗效 果,以延長過濾器之使用壽命。因此,本發明係利用簡單 的結構設計,達到延長SC- 1清洗循環系統中之過濾器的使 用壽命與提升洗淨效果之功效者。 以上所述之實施例僅係為說明本發明之技術思想及特 點,其目的在使熟習此項技藝之人士能夠瞭解本發明之内 容並據以實施,當不能以之限定本發明之專利範圍,即大 凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵 蓋在本發明之專利範圍内。 【圖號說明】Mx0y + 2yH ^ xM (2y / x) ++ yH20 Μ (0Η) x + x Bu Mx ++ 0. 5xH20 In summary, the design of adding a cleaning device to the cleaning liquid circulation system of the present invention can effectively remove two Particles of silicon oxide, silicon and its compounds, metals and their compounds, and organic matter types, to obtain better cleaning results, and to extend the life of the filter. Therefore, the present invention uses a simple structural design to achieve the effect of extending the service life of the filter in the SC-1 cleaning cycle system and improving the cleaning effect. The above-mentioned embodiments are only for explaining the technical ideas and characteristics of the present invention. The purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly. When the scope of the patent of the present invention cannot be limited, That is, any equivalent changes or modifications made in accordance with the spirit disclosed in the present invention should still be covered by the patent scope of the present invention. [Illustration of drawing number]
第11頁 200533429 14 加熱器 16 第一控制閥 18 過濾器 20 第二控制閥 22 第一泵 2 4 清洗裝置 26 第二容置槽 28 第二泵Page 11 200533429 14 Heater 16 First control valve 18 Filter 20 Second control valve 22 First pump 2 4 Cleaning device 26 Second holding tank 28 Second pump
第12頁 200533429 圖式簡單說明 第一圖為本發明之清洗裝置裝設在清洗液循環系統中的結 構示意圖。 第二圖為本發明於清洗液循環系統中之清洗液需要更換時 的結構示意圖。 第三圖為利用本發明之清洗裝置在清洗過濾器的結構示意 圖。Page 12 200533429 Brief description of the diagram The first diagram is the schematic diagram of the structure of the cleaning device installed in the cleaning liquid circulation system of the present invention. The second figure is a schematic diagram of the structure when the cleaning liquid in the cleaning liquid circulation system of the present invention needs to be replaced. The third figure is a schematic diagram of the structure of a filter for cleaning by using the cleaning device of the present invention.
第13頁Page 13
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| TW93109892A TWI253961B (en) | 2004-04-09 | 2004-04-09 | Cleaning device applicable in cleaning solution circulation system and capable of prolonging lifespan of filter |
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| TW93109892A TWI253961B (en) | 2004-04-09 | 2004-04-09 | Cleaning device applicable in cleaning solution circulation system and capable of prolonging lifespan of filter |
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| TWI253961B TWI253961B (en) | 2006-05-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10935896B2 (en) | 2016-07-25 | 2021-03-02 | Applied Materials, Inc. | Cleaning solution mixing system with ultra-dilute cleaning solution and method of operation thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10935896B2 (en) | 2016-07-25 | 2021-03-02 | Applied Materials, Inc. | Cleaning solution mixing system with ultra-dilute cleaning solution and method of operation thereof |
| TWI726130B (en) * | 2016-07-25 | 2021-05-01 | 美商應用材料股份有限公司 | Cleaning solution mixing system with ultra-dilute cleaning solution, method of operation thereof, and cleaning tool comprising the same |
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