1252813 九、發明說明： 發明所屬之技術領域 本發明係有關於一種流體喷射裝置及其製造方法，特別係 有關於一種具感測器之流體喷射裝置及其製造方法，藉由感測裝 置元件，使得在製造過程中即時監控流體腔的形成。 先前技術 微流體喷射裝置近來已廣泛地運用於資訊產業，例如喷墨 印表機或類似設備中。隨著微系統工程（micro system engineering) 的逐步開發，此種流體噴射裝置逐漸有其他眾多領域之應用，例 如燃料喷射系統(fuel injection system)、細胞篩選（cell sorting)、 藥物釋放系統（drug delivery system)、喷印光刻技術（print lithography)及微喷射推進系統（micro jet propulsion system)等。 在前述各應用領域中，較為成功的一種設計係使用熱驅動氣泡 (thermal driven bubble)方式以喷射微液滴。由於其設計簡單且成 本低廉，因此在使用上也最為普遍。 第1圖顯示一種習知美國專利號碼6,102,530的單石化的流 體贺射裝置1 ’其以一碎基底10作為本體，且在;g夕基底上形 成一結構層12，而在矽基底10和結構層12之間形成一流體腔 14 ’用以谷納；^體2 6，而在結構層12上設有~第一加熱2 0、 以及一弟一加熱态22，第一加熱器20用以在流體腔μ内產生 一第一氣泡30，第二加熱器22用以在流體腔14内產生一第二 氣泡32，以將流體腔14内之流體26射出。 由於單石化的流體噴射裝置i具有虛擬氣閥（virtualvalve) 的設計，並擁有高排列密度、低交互干擾、低熱量損失的特性， 0535-A2046丌 WF(N2);A03739;JAMNGW〇 5 1252813 且無須另外利用組裝方式接合喷孔片，因此可以降低生產成本。 然而，在習知的單石化的流體喷射裝置1中，結構層12主 要由低應力的氮化矽所組成。在製造過程中，其厚度對於流體喷 射裝置的壽命有直接的影響。此外，對流體喷射裝置的設計者而 言，流體喷射裝置所表現之流體喷射效果，與使用壽命皆為其所 關注重點。有鑑於此，形成流體腔時的蝕刻製程能否精確受到控 制將關鍵地影響流體腔尺寸的精確，亦影響流體喷射性質之表現 甚深。 此外，針對熱氣泡驅動流體喷射之裝置，若流體腔内之流 體填充不足，除影響所喷出微流體液滴尺寸之均勻性之外，亦可 能造成加熱器的「空燒效應」而導致加熱器過早損壞。 傳統上，對於蝕刻製程之掌控，習知技術多利用控片監控 勉刻結果，作為ϋ刻進度之比較基準。此種方法必須在兹刻過程 中之各項參數，例如：蝕刻液濃度、溫度…等皆精確控制下，方 可進行有效比對。除所需手續繁複外，更需增加成本付出（例如 控片花費），且無法即時測知其結果。另一方面，對流體填充之 檢測方式，則多利用流體喷射裝置内，加熱器電阻值的變化作為 依據，但此方法在檢測過程中，會對加熱器造成直接地影響，是 故準確性亦受懷疑。 發明内容 有鑑於此，本發明的目的在於提供一種具感測器之流體喷射 裝置，藉由感測器元件，使得在製造過程中即時監控流體腔的形 成，且精確控制流體腔尺寸。 本發明的另一目的在於提供一種具感測器之流體喷射裝 0535-A20467TWF(N2)；A03739；JAMNGWO 6 1252813 置，藉由感測器元件，使得液體填充於喷孔中的高度得以即時監 控，提升喷射液滴的精嫁性。 本發明的再一目的在於提供一種流體喷射裝置的製造方 法，藉由感測器元件，使得在製造過程中即時監控流體腔的形 成，且精確控制流體腔尺寸。 根據上述目的，本發明提供一種具有感測元件之流體噴射 裝置，包括：一基底；一結構層，設置在基底上’且與基底之間 形成一流體腔；至少一氣泡產生裝置，設置於結構層上流體腔之 對應侧；至少一電阻線感測元件，連接流體腔；一保護層，覆蓋 氣泡產生裝置與電阻線感測元件；以及一喷孔，鄰近氣泡產生器 且穿透保護層與結構層，且與流體腔連通。 根據上述目的，本發明另提供一種具有感測元件之流體喷 射裝置，包括：一基底；一結構層，設置在基底上，且與基底之 間形成一流體腔；至少一氣泡產生裝置，設置於結構層上流體腔 之對應侧；一保護層，覆蓋氣泡產生裝置；以及一喷孔，鄰近氣 泡產生器且穿透保護層與結構層，且與流體腔連通；以及一薄殼 電容感測元件，設於結構層上、鑲於保護層中且環繞喷孔。 根據上述目的，本發明又提供一種流體喷射裝置的製作方 法，包括下列步驟：提供一基底；形成一圖案化犧牲層於基底上； 形成一電阻器於犧牲層上，具有一第一端與一第二端；形成一圖 案化結構層於基底上，且覆蓋圖案化犧牲層與電阻器，露出電阻 器之第一端與一第二端；以及形成一流體通道於基板之底部，以 露出犧牲層；以及移除犧牲層以形成一流體腔。 以下配合圖式以及較佳實施例，以更詳細地說明本發明。 0535-A20467TWF(N2)；A03739；JAMNGWO 7 1252813 貫施方式 本發明提供一種具感測器之流體喷射裝置及流體喷射裝置 的製造方法。亦即提供一附有感測器之流體喷射裝置，此感測器 藉由預設之線路佈局，可在流體喷射裝置蝕刻製程之前後，與流 體填充與否之狀態下，表現出不同之輸出電子訊號（例如電流或 電阻），而控制系統可藉此判讀其蝕刻是否完成，抑或是否達到 適當之流體驅動條件。本發明除藉由單一感測器元件達到多重功 用，同時可監控流體腔的形成及檢測流體腔内液體位置。並且， 藉由感測器，可避免直接量測加熱器電阻值的變化，在檢測過程 中，不會直接地影響加熱器原結構。 第一實施例 本發明之第一實施例提供一具有單一電阻線之流體喷射裝 置及其製造方法。第2A-2B圖顯示根據本發明第一實施例之具 感測器之流體喷射裝置的製程剖面示意圖。第2C圖係顯示本發 明第一實施例之具有感測器之流體喷射裝置於填充墨水後的剖 面示意圖。 請參閱第2A圖，提供一基底101，例如單晶矽基底，且在 基底101上形成一圖案化犧牲層110。犧牲層110係由化學氣相 沉積（CVD)法所沉積之硼矽酸磷玻璃（BPSG)、矽酸磷玻璃（PSG) 或其他氧化矽材質。形成一電阻線120於基底101上，順應性披 覆犧牲層110上。電阻線120的材質包括摻雜之多晶矽層或其他 導電材料。接著，順應性形成一圖案化結構層130於基底101上， 且覆蓋圖案化犧牲層110。結構層130可由化學氣相沉積法（CVD) 0535-A20467TWF(N2)；A03739；JAMNGWO 8 1252813 所形成之一低應力氮化矽層，並 ⑽a)。結構層130包括兩開口二出：1〇。〜200百萬帕 施以-《差於電阻線12〇的兩端、;:出電阻線120的兩端。 、:士 θ ，兩為，亚利用一電表140，例如電 机计，直接罝測電阻線丨2〇 冤 桩"… 的電阻值或通過該線路之電流。 壯接者，形成一氣泡產生裝置17〇於結構層13〇上。氣泡 衣置170較佳者為由—電阻層 物理氣相沉積法(PVD)，綱/ 熱器，其中電阻層係由 ^⑽ Η例如悉鍍、錢鍍法或反應性濺鍍法，形 成如HfB2、TaAl、TaN或其他電阻姑粗 + 上开…。 料阻材枓。接著，在結構層130 4= 蓋氣泡產生裝置17°。保護層145的材 貝可為化子氧相沉積法所形成之氧化矽。 以/ί實施例中，氣泡產生裝置170包括-第-加熱器m、 二弟二加熱器172，第二加熱器m與第一加熱 位於嘴孔位置的相對侧。 y閱第』目’以濕鍅刻法钱刻基底101的背面形成一流 體料心且露出犧牲層⑽。然後，再以⑽法移除犧牲層 广成-流體腔⑽並擴大之，成為擴大的流體腔160。根 據本發明之實施例，於形成流體腔⑽的過程中，施以—電屢差 :電阻線120的兩端’並利用一電表14〇，例如電流計，量測該 p tl2G的電阻值或通過該線路之電流。當量測之電流值為電 秦=所貝獻時，則繼續進行钱刻。當量測之電流值為茲刻溶 、」貝獻％或所里測所得之電流值為零時，則停止似彳步驟， 繼續進行後續的製程步驟。 在f 2A圖中，電阻線120的材質係由多晶石夕（Poly_Silicon) ^員仞的^電材料所構成。電阻線位於犧牲層，與結構 層130之間。若此電路通過一電流1，則可得到在感測器兩端之 〇535~A20467TWF(N2)；A03739；JAMNGW〇 0 1252813 電壓訊號為V。當犧牲層移除後，再以KOH溶液對蝕刻矽基底 101，進行擴大流體腔160蝕刻時，由第2B圖可看出電阻線120 會隨矽材質一併移除，而形成一斷路電路120a與120b，此時兩 端電流訊號接近於0。如此即可利用電路輸出訊號之變化掌握蝕 刻進度。. 第2C圖係顯示本發明第一實施例之具有感測器之流體喷射 裝置100於填充墨水後的剖面示意圖。本實施例之流體喷射裝置 100包括一基底101、一結構層130、一流體腔160、以及一通道 150，其中，結構層130設置在基底101上，流體腔160形成於 結構層130與基底101之間，以及通道150與流體腔160連接。 至少一氣泡產生裝置170設置於結構層130上，與流體腔160對 應。一保護層145，形成於該結構層130上且覆蓋氣泡產生裝置 170。一喷孔180，鄰近該氣泡產生裝置130且穿透保護層145 與結構層130與流體腔160連通。 當前述之蝕刻步驟完成後，結構已形成一完整之流體喷射 裝置100。此時經由歧管、流道150而流入流體腔160與噴孔180 内之流體（請參見第2C圖），也同時與原電路120a、120b接觸。 此時可將感測器電路視為一填充流體（長度L)，與電阻線140A、 140b串聯之電阻系統。假設流體之等效電阻（equivalent resistor) 為Rliq ’此時感測器兩端之電壓Vf為：Vf=I(Ri+Rnq+R2)。式中 Ri與R2分別為電路120a與120b之電阻值。 在實際應用中，本發明中之感測器設計，不限於上述之電 阻電路，亦可為電容電路，或電阻-電容混合電路。而所設置之 部位，亦可針對流體喷射裝置中不同之區域，作單一或多組感測 監控元件。然需注意的是流體之導電度範圍，對於感測器應用之 0535-A2046丌 WF(N2);A03739;JAMNGW〇 10 1252813 設計參考。此外，進行蝕刻監控時，若能將感測器輸出訊號，搭 配適當訊號處理系統，更可直接控制蝕刻機台之製程進行。對完 成後之裝置言，感測器更可將所量測之流體位置回授予驅動系 統，以避免“空燒效應”之發生，而導致流體喷射裝置損毁。 第二實施例 本發明之第二實施例提供一具有兩電阻線並聯之流體噴射 裝置及其製造方法。第3A-3B圖顯示根據本發明第二實施例之 具感測器之流體喷射裝置的製程剖面示意圖。第3C圖係顯示本 發明第二實施例之具有感測器之流體喷射裝置於填充墨水後的 剖面示意圖。 本發明第二實施例之流體噴射裝置200係依據第一實施例 之流體喷射裝置100的設計，相同之處於此省略敘述。不同之處 在於第二實施例所設計之感測器200，為一多重電阻並聯設計架 構。於第3A圖之流體喷射裝置200中，共包含兩組電阻線感測 器：第一組電阻線205係設置於基底201與犧牲層210之間，而 第二組電阻線220設置於犧牲層210與結構層230之間，保護層 245披覆於最上層。兩組感測為並聯設計’亦可為獨立線路設 計。當電流I通過時可得到電壓V〇，係由第一組電阻線205與第 二組電阻線220所貢獻。當流體噴射結構之基底201(單晶矽晶 圓），被KOH蝕刻液移除時（如第3B圖所示），電阻線感測器205 之線路亦隨之部分移除，留下電阻線205a及205b，從而形成斷 路電路。此時電流I將只通過第二組電阻線220之線路，所量得 之電壓也變為Vi。當犧牲層移除後，再次以KOH進行姓刻時， 第二組電阻線220也將隨之移除而形成斷路（如第3C圖所示）， 0535-A20467TWF(N2)；A03739；JAMNGWO 11 1252813 而整體電路之電壓輸出即變為〇。同理，當流體填充入蝕刻完成 之區域時，感測器之輸出電壓，亦會隨流體填入之位置而再次變 化。此時可將感測器電路視為一填充流體（長度L)，與電阻線 205a、205b串聯之電阻系統。假設流體之等效電阻（equivalent resistor)為Rliq，此時感測器兩端之電壓Vf為：Vf^Id+Unq+R])。 式中1^與R2分別為電路205a與205b之電阻值。第4A圖係顯 示根據本發明實施例之感測器電路為一填充流體L，與電阻線 140A、140b串聯之等效電路圖。假設流體之等效電阻（equivalent resistor)為Rliqi，此時感測器兩端之電壓Vf為：Vf^Id+RHq+D。 此外亦可將感測器電路設計成惠斯登電橋（Wheatstone bridge)之 配置，如第4B圖所示。在第4B圖中Va與Vb之電壓壓差可表 示為：Vb-VfVidRdD/GRi+RJd+RO)。若使 R!=R2，則 前式可改寫為：Vb-Va=0.5 VKHJ/d+Rd。若將R3設計成欲 量測流體等效電阻之相近數值時，當感測器之電路形成斷路時 (R4趨近無限大），可得到¥^與Vb之壓差約為二分之一輸入電 壓；又當流體填充於電路間時(R3=R4)，乂3與Vb之壓差約為0。 如此可利用輸入電壓與輸出電壓之變化，直接得到钱刻製程之進 度掌控與流體填充後之位置量測。舉例言，於常溫下墨水的等效 電阻，約為相同幾何尺寸下，60°C、重量濃度33%氫氧化鉀（KOH) 溶液等效電阻之萬至十萬倍以上。因此可藉由不同電路之匹配設 計，制定出適當之相對應惠斯登電橋，以進行蝕刻進度或墨水填 充監控之用。 第三實施例 本發明第三實施例所設計之感測器，為一多重電阻並聯且同 0535-A20467TWF(N2)；A03739；JAMNGWO 12 1252813 時包括電容設計之架構。第5圖係本發明第三實施例之具感測器 之流體噴射裝置500的上視圖。第一組感測器550係為一薄殼電 容感測器550，其方向與未來喷孔540方向平行。而第二組感測 器510則與第一及第二實施例類似’但電阻線所設置的位置不同 於先前實施例所述，而改於犧牲層512之邊緣（如第6A圖所示）。 第6A-6B圖顯示根據本發明第一貧施例之具感測器之流體 喷射裝置500沿第5圖中箭號方向的製程剖面示意圖。第6C 圖係顯示本發明第三實施例之具有感娜器之流體喷射裝置500 於填充墨水後的剖面示意圖。 本發明第三實施例之流體喷射裝置500係依據第二實施例 之流體噴射裝置200的設計，相同之處於此省略敘述。不同之處 在於第三實施例所設計之感測器係包括薄殼電容感測器55〇與 並聯電阻感測器510的混成電路。薄叙電容感測器550的結構如 第7Α圖所示，其電極係由多層導體結構(551〜555)所構成，包括 加熱器之電阻材料（TaA卜TiN、TiW或Pt等）、金屬層（A1_Si_Cu 及Al-Cu)、與接觸窗（TiW或TiN)。因此，在製造方法上可相容 於傳統之半導體製程。薄殼電容感測器550埋於保護層516中， 其中心位置係流體喷射裝置500的喷孔540。並聯電阻感測器510 係由電阻560a、560b與560c並聯並由導線562及564連接其端 點所構成，電阻560a設置於犧牲層512與結構層514間的角落， 且部分披覆於犧牲層上方，電阻560b與560c設置於犧牲層512、 結構層514與基底501間的角落。 根據本發明實施例，可藉由量測感測器550電路之電容變 化（介電常數改變），用於監測喷孔製程與流體填充之位置掌控， 如第7A圖所示。如先前實施例所述，並聯電阻感測器510可用 0535- A2046丌 WF(N2);A03739;JAMNGW〇 13 1252813 於監測流體腔之蝕刻狀態與流體腔内流體的填充狀態（請參見第 6C 圖）。 第8圖為一包含C!、C2電容與運算放大器之感測電路，再 配合非重疊電路(non-overlapping circuit)(圖中未標示）後可得 。其中Q即為一半徑r，高度L之薄殼電容器（如第7Α圖所示）， 此電容器係利用原加熱器之電阻材料（TaA：l、TiN、TiW或Pt等）、 金屬層（Al-Si-Cu及Al-Cu)、與接觸窗CTiW或TiN)等材料構成 (如第7B圖所示）。假設空氣與流體所佔高度分別為a與L-a，則 薄殼電容器之電容可表示為式1 :BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fluid ejection device and a method of fabricating the same, and more particularly to a fluid ejection device with a sensor and a method of manufacturing the same, by sensing device components, This allows for the immediate monitoring of the formation of fluid chambers during the manufacturing process. Prior Art Microfluid ejection devices have recently been widely used in the information industry, such as ink jet printers or the like. With the gradual development of micro system engineering, such fluid ejection devices are gradually being used in many other fields, such as fuel injection systems, cell sorting, drug delivery systems (drug delivery). System), print lithography, and micro jet propulsion system. In each of the aforementioned fields of application, a more successful design uses a thermally driven bubble to eject microdroplets. Due to its simple design and low cost, it is also the most common in use. Figure 1 shows a conventional petrochemical fluid applicator 1' of the prior art U.S. Patent No. 6,102,530, which has a shredded substrate 10 as its body and a structural layer 12 formed on the base of the substrate 10 and the structure. Between the layers 12, a fluid chamber 14' is formed for the guar; the body 2 is provided with a first heating 20, and a first heating state 22, and the first heater 20 is used for A first bubble 30 is created in the fluid chamber μ, and a second heater 22 is used to generate a second bubble 32 in the fluid chamber 14 to inject the fluid 26 in the fluid chamber 14. Because the single petrochemical fluid injection device i has a virtual valve design and has high density, low crosstalk, and low heat loss, 0535-A2046丌WF(N2); A03739; JAMNGW〇5 1252813 It is not necessary to separately assemble the orifice sheet by means of assembly, so that the production cost can be reduced. However, in the conventional single petrochemical fluid ejection device 1, the structural layer 12 is mainly composed of low stress tantalum nitride. During the manufacturing process, its thickness has a direct impact on the life of the fluid ejection device. In addition, for the designer of the fluid ejection device, the fluid ejection effect exhibited by the fluid ejection device and the service life are all important concerns. In view of this, the precise control of the etching process when forming a fluid chamber will critically affect the accuracy of the fluid chamber size and also the fluid jet properties. In addition, in the case of a device for driving a fluid jet by a hot bubble, if the fluid in the fluid chamber is insufficiently filled, in addition to affecting the uniformity of the size of the droplets of the sprayed microfluid, the "air-burning effect" of the heater may be caused to cause heating. The device is damaged prematurely. Traditionally, for the control of the etching process, the conventional technology uses the control film to monitor the engraving result as a benchmark for the engraving progress. This method must be accurately controlled under the precise control of various parameters during the process, such as etchant concentration, temperature, etc., for effective comparison. In addition to the complicated procedures required, it is necessary to increase the cost (for example, the cost of film control), and the results cannot be detected immediately. On the other hand, the detection method of fluid filling is based on the change of the resistance value of the heater in the fluid ejection device. However, this method directly affects the heater during the detection process, so the accuracy is also Suspected. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a fluid ejection device with a sensor that allows for the instantaneous monitoring of the formation of a fluid chamber and precise control of the size of the fluid chamber during the manufacturing process. Another object of the present invention is to provide a sensor-equipped fluid ejection device 0535-A20467TWF (N2); A03739; JAMNGWO 6 1252813, by which the height of the liquid filled in the nozzle can be monitored instantaneously by the sensor element To enhance the embedding of the spray droplets. It is still another object of the present invention to provide a method of manufacturing a fluid ejection device whereby the sensor element is used to instantly monitor the formation of a fluid chamber during manufacturing and to precisely control the size of the fluid chamber. According to the above object, the present invention provides a fluid ejecting apparatus having a sensing element, comprising: a substrate; a structural layer disposed on the substrate and forming a fluid chamber with the substrate; at least one bubble generating device disposed on the structural layer a corresponding side of the upper fluid chamber; at least one resistance line sensing element connecting the fluid chamber; a protective layer covering the bubble generating device and the resistance line sensing element; and a nozzle hole adjacent to the bubble generator and penetrating the protective layer and the structural layer And connected to the fluid chamber. According to the above object, the present invention further provides a fluid ejecting apparatus having a sensing element, comprising: a substrate; a structural layer disposed on the substrate and forming a fluid chamber with the substrate; at least one bubble generating device disposed on the structure a corresponding side of the fluid chamber on the layer; a protective layer covering the bubble generating device; and a spray hole adjacent to the bubble generator and penetrating the protective layer and the structural layer and communicating with the fluid chamber; and a thin-shell capacitive sensing element On the structural layer, in the protective layer and around the orifice. According to the above object, the present invention further provides a method of fabricating a fluid ejection device, comprising the steps of: providing a substrate; forming a patterned sacrificial layer on the substrate; forming a resistor on the sacrificial layer, having a first end and a a second end; forming a patterned structure layer on the substrate, and covering the patterned sacrificial layer and the resistor to expose the first end and the second end of the resistor; and forming a fluid channel at the bottom of the substrate to expose the sacrifice a layer; and removing the sacrificial layer to form a fluid chamber. The invention will be described in more detail below with reference to the drawings and preferred embodiments. 0535-A20467TWF(N2); A03739; JAMNGWO 7 1252813 The present invention provides a fluid ejection device with a sensor and a method of manufacturing the fluid ejection device. That is to say, a fluid ejection device with a sensor is provided, which can display different output after the fluid ejection device is etched and before and after filling with the fluid by a preset circuit layout. An electronic signal (such as current or resistance) that the control system can use to determine if the etch is complete or if proper fluid drive conditions are met. In addition to achieving multiple functions by a single sensor element, the present invention monitors the formation of fluid chambers and detects the location of liquid within the fluid chamber. Moreover, by means of the sensor, direct measurement of the change in the resistance value of the heater can be avoided, and the original structure of the heater is not directly affected during the detection. First Embodiment A first embodiment of the present invention provides a fluid ejecting apparatus having a single electric resistance wire and a method of manufacturing the same. 2A-2B is a schematic cross-sectional view showing the process of the fluid ejecting apparatus with a sensor according to the first embodiment of the present invention. Fig. 2C is a schematic cross-sectional view showing the fluid ejecting apparatus having the sensor of the first embodiment of the present invention after filling the ink. Referring to Fig. 2A, a substrate 101, such as a single crystal germanium substrate, is provided, and a patterned sacrificial layer 110 is formed on the substrate 101. The sacrificial layer 110 is a phosphorous borosilicate glass (BPSG), a phosphoric acid phosphide glass (PSG) or other cerium oxide material deposited by a chemical vapor deposition (CVD) method. A resistive wire 120 is formed on the substrate 101, and the sacrificial layer 110 is compliantly coated. The material of the resistance wire 120 includes a doped polysilicon layer or other conductive material. Next, a patterned structure layer 130 is formed on the substrate 101 and covers the patterned sacrificial layer 110. The structural layer 130 may be a low stress tantalum nitride layer formed by chemical vapor deposition (CVD) 0535-A20467TWF (N2); A03739; JAMNGWO 8 1252813, and (10) a). The structural layer 130 includes two openings: one turn. ~200 million Pascals - "Beyond the two ends of the resistance wire 12";: Both ends of the resistance wire 120. ,: θ, two, sub-meter 140, such as a motor meter, directly measure the resistance value of the resistance line 〇 2〇 桩 pile "... or the current through the line. The splicer forms a bubble generating device 17 on the structural layer 13A. The bubble coating 170 is preferably made of a resistive layer physical vapor deposition (PVD), a heat exchanger, wherein the resistive layer is formed by, for example, plating, money plating or reactive sputtering. HfB2, TaAl, TaN or other resistors are coarse + on... Material barrier material. Next, at the structural layer 130 4 = cover the bubble generating device 17°. The material of the protective layer 145 may be cerium oxide formed by a proton oxygen phase deposition method. In the embodiment, the bubble generating device 170 includes a -th heater m, a second heater 172, and a second heater m and a first heating on the opposite side of the nozzle hole position. y read the first item to form a first-class body center and expose the sacrificial layer (10) by wet engraving. Then, the sacrificial layer wide-fluid cavity (10) is removed by the method of (10) and enlarged to become an enlarged fluid chamber 160. According to an embodiment of the present invention, in the process of forming the fluid chamber (10), the electrical resistance is: the two ends of the resistance line 120' and the resistance value of the p tl2G is measured by an electric meter, such as an ammeter. The current through the line. If the current value of the equivalent measurement is electric, if it is given, then the money will continue to be engraved. When the current value of the equivalent is etched, and the current value measured by the 5% or the measured value is zero, the similar step is stopped and the subsequent process steps are continued. In the f 2A diagram, the material of the electric resistance wire 120 is composed of a polycrystalline material of Polycrystalline Silicon. The resistive wire is between the sacrificial layer and the structural layer 130. If the circuit passes a current of 1, it can obtain 〇535~A20467TWF(N2); A03739; JAMNGW〇 0 1252813 voltage signal is V at both ends of the sensor. After the sacrificial layer is removed, the etched germanium substrate 101 is etched with the KOH solution, and the expanded fluid cavity 160 is etched. As shown in FIG. 2B, the resistive wire 120 is removed along with the germanium material to form a circuit breaker 120a. With 120b, the current signal at both ends is close to zero. In this way, the progress of the etch can be grasped by the change of the output signal of the circuit. Fig. 2C is a schematic cross-sectional view showing the fluid ejecting apparatus 100 having the sensor of the first embodiment of the present invention after filling the ink. The fluid ejection device 100 of the present embodiment includes a substrate 101, a structural layer 130, a fluid chamber 160, and a channel 150. The structural layer 130 is disposed on the substrate 101, and the fluid chamber 160 is formed on the structural layer 130 and the substrate 101. The channel 150 is connected to the fluid chamber 160. At least one bubble generating device 170 is disposed on the structural layer 130 in correspondence with the fluid chamber 160. A protective layer 145 is formed on the structural layer 130 and covers the bubble generating device 170. An orifice 180 is adjacent to the bubble generating device 130 and penetrates the protective layer 145 and the structural layer 130 to communicate with the fluid chamber 160. When the aforementioned etching step is completed, the structure has formed a complete fluid ejecting apparatus 100. At this time, the fluid flowing into the fluid chamber 160 and the injection hole 180 via the manifold and the flow path 150 (see FIG. 2C) is also in contact with the original circuits 120a and 120b. At this point, the sensor circuit can be considered a fill fluid (length L), a resistor system in series with the resistive lines 140A, 140b. Assume that the equivalent resistance of the fluid is Rliq'. At this time, the voltage Vf across the sensor is: Vf = I (Ri + Rnq + R2). Where Ri and R2 are the resistance values of circuits 120a and 120b, respectively. In practical applications, the sensor design of the present invention is not limited to the above-mentioned resistor circuit, and may be a capacitor circuit or a resistor-capacitor hybrid circuit. The set location can also be used as a single or multiple sets of sensing monitoring elements for different areas of the fluid ejection device. However, it is necessary to pay attention to the conductivity range of the fluid, for the sensor application 0535-A2046 丌 WF (N2); A03739; JAMNGW 〇 10 1252813 design reference. In addition, when performing the etching monitoring, if the sensor output signal can be matched with the appropriate signal processing system, the process of the etching machine can be directly controlled. For the completed device, the sensor can return the measured fluid position to the drive system to avoid the "vacuum effect" and cause the fluid ejection device to be damaged. SECOND EMBODIMENT A second embodiment of the present invention provides a fluid ejecting apparatus having two resistance lines in parallel and a method of fabricating the same. 3A-3B are schematic cross-sectional views showing the process of the fluid ejecting apparatus with a sensor according to a second embodiment of the present invention. Fig. 3C is a schematic cross-sectional view showing the fluid ejecting apparatus having the sensor of the second embodiment of the present invention after filling the ink. The fluid ejecting apparatus 200 according to the second embodiment of the present invention is based on the design of the fluid ejecting apparatus 100 of the first embodiment, and the same points are omitted here. The difference is that the sensor 200 designed in the second embodiment is a multi-resistor parallel design. In the fluid ejection device 200 of FIG. 3A, a total of two sets of resistance line sensors are included: a first group of resistance wires 205 is disposed between the substrate 201 and the sacrificial layer 210, and a second group of resistance wires 220 is disposed on the sacrificial layer. Between 210 and structural layer 230, protective layer 245 is applied over the uppermost layer. The two sets of senses are designed in parallel' and can also be designed as separate lines. The voltage V〇 is obtained when the current I passes, and is contributed by the first set of resistance lines 205 and the second set of resistance lines 220. When the substrate 201 (single crystal germanium wafer) of the fluid ejection structure is removed by the KOH etching solution (as shown in FIG. 3B), the line of the resistance line sensor 205 is also partially removed, leaving the resistance line. 205a and 205b, thereby forming a circuit breaker. At this time, the current I will pass only through the line of the second group of resistor wires 220, and the measured voltage also becomes Vi. When the sacrificial layer is removed and the KOH is again engraved, the second set of resistive wires 220 will also be removed to form an open circuit (as shown in Figure 3C), 0535-A20467TWF(N2); A03739; JAMNGWO 11 1252813 and the voltage output of the overall circuit becomes 〇. Similarly, when the fluid fills the area where the etching is completed, the output voltage of the sensor changes again depending on where the fluid is filled. At this point, the sensor circuit can be considered a fill fluid (length L), a resistor system in series with the resistive wires 205a, 205b. Assuming that the equivalent resistance of the fluid is Rliq, the voltage Vf across the sensor is: Vf^Id+Unq+R]). In the formula, 1^ and R2 are the resistance values of the circuits 205a and 205b, respectively. Fig. 4A is a diagram showing an equivalent circuit diagram in which the sensor circuit according to an embodiment of the present invention is a filling fluid L in series with the resistance wires 140A, 140b. Assuming that the equivalent resistance of the fluid is Rliqi, the voltage Vf across the sensor is: Vf^Id+RHq+D. Alternatively, the sensor circuit can be designed as a Wheatstone bridge configuration as shown in Figure 4B. The voltage difference between Va and Vb in Fig. 4B can be expressed as: Vb - VfVidRdD / GRi + RJd + RO). If R!=R2, the preceding equation can be rewritten as: Vb-Va=0.5 VKHJ/d+Rd. If R3 is designed to measure the similar value of the equivalent resistance of the fluid, when the circuit of the sensor is broken (R4 approaches infinity), the pressure difference between ¥^ and Vb is about one-half of the input. Voltage; when the fluid is filled between the circuits (R3 = R4), the pressure difference between 乂3 and Vb is about zero. In this way, the change of the input voltage and the output voltage can be utilized to directly obtain the position measurement of the process and the position measurement after the fluid filling. For example, the equivalent resistance of the ink at room temperature is about 10,000 to 100,000 times the equivalent resistance of the 60 ° C, weight concentration 33% potassium hydroxide (KOH) solution at the same geometrical size. Therefore, an appropriate Wheatstone bridge can be developed by matching the different circuits for etching progress or ink filling monitoring. Third Embodiment A sensor designed according to a third embodiment of the present invention includes a multi-resistor in parallel and the same as 0535-A20467TWF(N2); A03739; JAMNGWO 12 1252813 includes a capacitor design. Fig. 5 is a top plan view of a fluid ejecting apparatus 500 having a sensor according to a third embodiment of the present invention. The first set of sensors 550 is a thin-shell capacitive sensor 550 having a direction parallel to the direction of the future orifice 540. The second set of sensors 510 is similar to the first and second embodiments, but the position of the resistor line is different from that of the previous embodiment, and is changed to the edge of the sacrificial layer 512 (as shown in FIG. 6A). . Fig. 6A-6B is a cross-sectional view showing the process of the fluid ejecting apparatus 500 with the sensor according to the first embodiment of the present invention taken along the arrow direction in Fig. 5. Fig. 6C is a schematic cross-sectional view showing the fluid ejecting apparatus 500 having the sensor in the third embodiment of the present invention after filling the ink. The fluid ejecting apparatus 500 according to the third embodiment of the present invention is based on the design of the fluid ejecting apparatus 200 of the second embodiment, and the same points are omitted here. The difference is that the sensor designed in the third embodiment includes a hybrid circuit of the thin-shell capacitance sensor 55A and the parallel resistance sensor 510. The structure of the thin capacitive sensor 550 is as shown in FIG. 7 , and the electrodes are composed of a multilayer conductor structure (551 to 555), including a heater resistive material (TaA, TiN, TiW or Pt, etc.), a metal layer. (A1_Si_Cu and Al-Cu), and contact window (TiW or TiN). Therefore, the manufacturing method is compatible with conventional semiconductor processes. The thin-shell capacitive sensor 550 is embedded in the protective layer 516 at a central location that is the orifice 540 of the fluid ejection device 500. The parallel resistance sensor 510 is formed by the resistors 560a, 560b and 560c connected in parallel and connected by the ends of the wires 562 and 564. The resistor 560a is disposed at a corner between the sacrificial layer 512 and the structural layer 514, and partially covered by the sacrificial layer. Above, resistors 560b and 560c are disposed at corners of sacrificial layer 512, structure layer 514, and substrate 501. According to an embodiment of the invention, the capacitance change (dielectric constant change) of the sensor 550 circuit can be used to monitor the position of the nozzle process and the fluid filling, as shown in Fig. 7A. As described in the previous embodiment, the parallel resistance sensor 510 can be used to monitor the etching state of the fluid chamber and the filling state of the fluid in the fluid chamber by using 0535-A2046丌WF(N2); A03739; JAMNGW〇13 1252813 (see Figure 6C). ). Figure 8 shows a sensing circuit including C!, C2 capacitors and an operational amplifier, which is available in conjunction with a non-overlapping circuit (not shown). Where Q is a thin-shell capacitor of radius r and height L (as shown in Fig. 7), which utilizes the resistance material of the original heater (TaA: 1, TiN, TiW or Pt, etc.), metal layer (Al -Si-Cu and Al-Cu), and contact window CTiW or TiN) (such as shown in Figure 7B). Assuming that the air and fluid occupy a height of a and L-a, respectively, the capacitance of the thin-shell capacitor can be expressed as Equation 1:
Ci=d (式 υ 2[s〇a + sf (L-a)] 式1 +8〇與8£分別表示空氣與流體的介電常數。經由輸出/輸入 電壓比，與已知C2之設計值，可以計算得出C!。而流體與空氣 之介電常數εf與ε()，與薄殼電容550之高度L皆為已知，故可經 由C!解出空氣高度a，與流體高度L-a。此資料可回授至流體喷 射系統進行判讀，並根據該流體於該喷孔内的高度調整驅動加熱 體的時間，或做為是否執行加熱等後續動作，如此即可避免加熱 器「空燒效應」，從而有效保障流體噴射裝置之壽命。 根據本發明所揭露之方式，每一微流體喷射裝置可配合感測 器之設計，對日後進行之單段、多段製程，與流體填充狀況進行 監控。此項結果除可提高流體喷射裝置之尺寸製作精度外5更可 用以提供系統，做為驅動流體喷射之檢驗條件，達到避免「空燒 效應」的目的，進而延長使用壽命之目的。而此兩項目的可利用 同一感測器之設計線路，更可達到減少製作成本之效果。 0535-A2046丌 WF(N2);A〇3739;JAMNGW〇 14 1252813 本案特徵及效果 本發明之特徵與效果在於形成一具感測器之流體喷射裝 置。此感測器藉由輸出電子訊號之變化，除可作為喷射頭製作過 程中蝕刻製程之進度監測外，亦可用於整體結構完成後之流體位 置量測。前者可掌控蝕刻製程之進度，代替事後之光學或其他破 壞性檢測；而後者所提供之流體位置，可作為流體發射時之參考 依據。本發明裝置可有效應用於文字或影像之資料列印處理、燃 料喷射系統及生醫科技之藥劑注射等相關或類似系統。 雖然本發明已以較佳實施例揭露如上，然其並非用以限定 本發明，任何熟習此項技藝者，在不脫離本發明之精神和範圍 内，當可作更動與潤飾，因此本發明之保護範圍當視後附之申請 專利範圍所界定者為準。 0535-A20467TWF(N2)；A03739；JAMNGWO 15 1252813 【圖式簡單說明】 第1圖顯示一種習知的單石化的流體喷射裝置的剖面示意 圖， 第2A-2B圖顯示根據本發明第一實施例之具感測器之流體 噴射裝置的製程剖面示意圖； 第2C圖顯示本發明第一實施例之具有感測器之流體噴射 裝置於填充墨水後的剖面示意圖； 第3A-3B圖顯示根據本發明第二實施例之具感測器之流體 噴射裝置的製程剖面示意圖； 第3C圖顯示本發明第二實施例之具有感測器之流體噴射 裝置於填充墨水後的剖面示意圖； 第4A圖顯示根據本發明實施例之感測器電路為一填充流 體（長度L)，與電阻線串聯之等效電路圖； 第4B圖顯示本發明第二實施例之感測器電路設計成惠斯 登電橋（Wheatstone bridge)之電路圖； 第5圖顯示本發明第三實施例之具感測器之流體噴射裝置 的上視圖； 第6A-6B圖顯示根據本發明第三實施例之具感測器之流體 喷射裝置沿第5圖中箭號Ι-Γ方向的製程剖面示意圖； 第6C圖顯示本發明第三實施例之具有感測器之流體喷射 裝置於填充墨水後的剖面示意圖； 第7A圖顯示本發明第三實施例之薄殼電容感測器的結構 不意圖， 第7B圖顯示本發明第三實施例之薄殼電容感測器的電極 為多層結構，由加熱器之電阻材料、金蜃層、與接觸窗等相同的 0535-A20467TWF(N2)；A03739；JAMNGWO 16 1252813 材料所構成，以及 第8圖顯示本發明第三實施例之包含Ci、C2電容與運算器 之感測電路圖。 【主要元件符號說明】 習知部分（第1圖） 1〜單石化的流體喷射裝置； 10〜矽基底； 12〜結構層； 14〜流體腔； 20〜第一加熱器； 22〜第二加熱器； 26〜流體通道； 30〜第一氣泡； 32〜第二氣泡。 本案部分（第2A〜8圖） 100、 200、500〜流體噴射裝置； 101、 201、501 〜基底； 110、210〜犧牲層； 120、120a、120b、205、205a、205b、220〜電阻線； 130、230〜結構層； 135、235〜開口； 140、240〜電表； 145、245〜保護層； 150、250〜流體通道； 0535~A20467TWF(N2)；A03739；JAMNGWO 17 1252813 160、260〜流體腔； 170、 270〜氣泡產生裝置； 171、 271〜第一加熱器； 172、 272〜第二加熱器； 180、280〜喷孔； L〜填充流體長度； R!、R2、R3、R4〜電阻； 510〜並聯電阻感測器； 512〜犧牲層； 514〜結構層； 516〜保護層； 520〜流體通道； 530〜流體腔； 540〜喷孔； 550〜薄殼電容感測器； 551-555〜薄殼電容感測器電極之多層導體結構； 560a、560b、560c〜電阻； 562、564〜導線；Ci=d (Formula υ 2[s〇a + sf (La)] Equations 1 +8〇 and 8£ represent the dielectric constants of air and fluid, respectively. Through the output/input voltage ratio, and the design value of known C2, C! can be calculated. The dielectric constants εf and ε() of the fluid and air, and the height L of the thin-shell capacitor 550 are known, so that the air height a and the fluid height La can be solved via C!. This data can be fed back to the fluid ejection system for interpretation, and the time for driving the heating body can be adjusted according to the height of the fluid in the nozzle hole, or as a follow-up action such as heating, so as to avoid the "burning effect" of the heater. Thus, the life of the fluid ejection device is effectively guaranteed. According to the disclosed method, each microfluid ejection device can be combined with the design of the sensor to monitor the single-stage, multi-stage process and fluid filling conditions in the future. In addition to improving the size of the fluid ejection device, the result can be used to provide the system as a test condition for driving the fluid injection to achieve the purpose of avoiding the "air-burning effect" and thereby prolonging the service life. item The design line of the same sensor can be used to reduce the production cost. 0535-A2046丌WF(N2); A〇3739; JAMNGW〇14 1252813 The characteristics and effects of the present invention are characterized by forming a The fluid ejection device with the sensor can be used for measuring the progress of the etching process in the manufacturing process of the ejection head by using the output of the electronic signal, and can also be used for measuring the position of the fluid after the completion of the overall structure. The progress of the etching process can be controlled to replace the subsequent optical or other destructive detection; and the fluid position provided by the latter can be used as a reference for fluid emission. The device of the invention can be effectively applied to the printing of text or image data, Related or similar systems for fuel injection systems and pharmaceutical injections of biomedical technology, etc. Although the invention has been disclosed above in the preferred embodiments, it is not intended to limit the invention, and those skilled in the art, without departing from the invention Within the spirit and scope, when it can be modified and retouched, the scope of protection of the present invention is defined by the scope of the patent application attached. 0535-A20467TWF(N2); A03739; JAMNGWO 15 1252813 [Simplified Schematic] FIG. 1 shows a schematic cross-sectional view of a conventional single petrochemical fluid ejecting apparatus, and FIG. 2A-2B shows the first according to the present invention. FIG. 2C is a schematic cross-sectional view showing a fluid ejecting apparatus with a sensor according to a first embodiment of the present invention after filling ink; FIG. 3A-3B is a view showing 2 is a schematic cross-sectional view showing a process of a fluid ejecting apparatus with a sensor according to a second embodiment of the present invention; FIG. 3C is a cross-sectional view showing a fluid ejecting apparatus having a sensor according to a second embodiment of the present invention after filling ink; The sensor circuit according to the embodiment of the present invention is shown as a filling fluid (length L), and an equivalent circuit diagram in series with the resistance wire; FIG. 4B shows that the sensor circuit of the second embodiment of the present invention is designed as a Wheatstone power plant. FIG. 5 is a top view showing a fluid ejecting apparatus with a sensor according to a third embodiment of the present invention; and FIGS. 6A-6B are a view showing the first aspect of the present invention. FIG. 6C is a schematic cross-sectional view of the fluid ejecting apparatus with a sensor in the direction of the arrow Ι-Γ in FIG. 5; FIG. 6C is a view showing the fluid ejecting apparatus with a sensor according to the third embodiment of the present invention after filling the ink. FIG. 7A is a schematic view showing the structure of the thin-shell capacitive sensor according to the third embodiment of the present invention, and FIG. 7B is a view showing the electrode of the thin-shell capacitive sensor according to the third embodiment of the present invention. The resistor material of the heater, the metal layer, the same 0535-A20467TWF (N2); A03739; JAMNGWO 16 1252813 material, and FIG. 8 shows the capacitance of Ci, C2 and the third embodiment of the present invention. The sensing circuit diagram of the operator. [Main component symbol description] Conventional part (Fig. 1) 1~ Single petrochemical fluid ejection device; 10~矽 substrate; 12~structural layer; 14~fluid cavity; 20~first heater; 22~second heating 26~ fluid channel; 30~ first bubble; 32~ second bubble. Part of this case (Fig. 2A-8) 100, 200, 500~ fluid ejection device; 101, 201, 501~ substrate; 110, 210~ sacrificial layer; 120, 120a, 120b, 205, 205a, 205b, 220~ resistance wire 130, 230~ structural layer; 135, 235~ opening; 140, 240~ electric meter; 145, 245~ protective layer; 150, 250~ fluid channel; 0535~A20467TWF(N2); A03739; JAMNGWO 17 1252813 160, 260~ Fluid chamber; 170, 270~ bubble generating device; 171, 271~ first heater; 172, 272~ second heater; 180, 280~ orifice; L~ fill fluid length; R!, R2, R3, R4 ~ resistance; 510 ~ parallel resistance sensor; 512 ~ sacrificial layer; 514 ~ structural layer; 516 ~ protective layer; 520 ~ fluid channel; 530 ~ fluid cavity; 540 ~ orifice; 550 ~ thin shell capacitive sensor; 551-555~ multilayer conductor structure of thin-shell capacitor sensor electrode; 560a, 560b, 560c~ resistor; 562, 564~ wire;
Cl、C2〜電容。 0535-A2046丌 WF(N2);A03739;JAMNGW〇 18Cl, C2 ~ capacitor. 0535-A2046丌 WF(N2);A03739;JAMNGW〇 18