TWI248199B - Conductive plug and method of making the same - Google Patents

Abstract

The disclosure presents a conductive plug and a method of making the same. The method includes the following steps of forming a first dielectric layer, an antireflective layer, and a sacrificial layer on a substrate in sequence. A via hole is formed through the sacrificial layer, antireflective layer, and first dielectric layer. A conductive layer is deposited over the sacrificial layer, filling via hole. Thereafter, excess portions of the conductive layer are removed, forming a conductive plug. In addition, at least portions of the sacrificial layer are recessed, and thereby the surface of conductive plug is higher than the surrounding surface thereof. Moreover, a second dielectric layer is disposed over the substrate and the conductive plug. A conductive line is formed through the second dielectric layer and conductive plug, contacting the conductive plug. The conductive plug includes excess portions having an upper surface and a sidewall. The conductive line is in contact with portions of the upper surface and sidewall, thereby not only solving open issue but also increasing contact area between conductive plugs. As such, contact resistance is reduced.

Description

1248199 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a conductive plug and a manufacturing method thereof [Prior Art] A conventional semiconductor process such as a Random Access Memory; the method includes: The insulating layer is patterned to form a contact hole mechanical grinding to form a surface choking. A general deposition of a cerium oxide layer is then utilized. Next, on the shape layer, and performing a patterning and engraving step to selectively layer and remove the photoresist pattern to form a conductive material to be used as a wire element in the above-mentioned prior art, by surface contours, and then, a tungsten plug layer, the dream layer is not completely removed during the etching step, resulting in defects, that is, the manufacture of an open circuit or an improved conductive plug. [Invention] In view of this, the manufacturing method of the present invention, Not only solved the semiconductor method. Dynamic with DRAM) becomes a must, then the above-mentioned absolute method is based on a light process technology, and especially related to the middle edge layer of the machine access process, the w-stacked tungsten edge layer forms a resist layer in development to form light to remove the above-mentioned two oxygen. The tungsten plug surface between the pieces is often broken by the tungsten plug. ϋ, connect the wires. The base cover has a tungsten-generating tungsten and a subsequent problem memory 'conducting and then selecting a metal, which is patterned by the above-mentioned base resistance of the contour nitrous oxide, and is applied secondly to the manufacturing rhyme of the dynamic plug. The corrugated metal is intercalated with the phosphatide layer and the bottom of the oxidized layer. Thereafter, the opening of the yttrium oxide is usually in contact with the oxidized oxide layer of the insulating layer and the wire formed by the oxidation of nitrogen above the oxidized plug. Therefore, there is an urgent need in the industry to provide a problem of a conductive plug and its path. At the same time, it also makes conductive interleaving 0548-A50295TWf (5.0); 93021; Forever769.ptd page 8 1248199 V. Between the invention description (2) The contact area is increased, and the contact resistance is reduced. - α is formed into the first dielectric layer, an anti-reflection layer, and the sacrificial layer is defined by #^, and a via is defined through the sacrificial layer, the anti-reflection layer, and the first dielectric layer. The more ^ ^ 久久 g ^ 罘; 丨 electric layer, and deposited on the sacrificial layer a conductive acoustic layer window '· finally remove the conductive layer outside the via window,: electric idle and concave at least part of the above sacrifice The layer 'sends the surface around the two major eight. Finally, depositing a second dielectric layer on the upper cover of the conductive plug; and forming a wire through the above-mentioned eight-spoon red base contact. The conductive plug has a protrusion ratio and the conductor is in contact with the upper surface and the sidewall of the portion. The above-mentioned sacrifice: the recess is reversed, and the step is to use the anti-reflection layer and the upper α1=ηρ Λ : ...(Di iuted Hydr〇fa The characteristics of the difference in the rate of the engraving, in order to remove the part of the Bu, +. Sacrificial layer and make the conductive plug more than the spear, [the knife of the above-mentioned follow-up (four) process required for the dog, and thus indirectly Shortening the absence of the above-mentioned anti-reflection layer covering i::degree; another:!; t avoiding the problem of the open circuit caused by the conventional technology in the conventional technology: a plurality of layers, such as a layer of ruthenium oxynitride, wherein a portion of the conductive plug protrudes from the wall, and the wire is in contact with a portion of the upper surface and one side, so that the conductive plugs are in contact with each other; and the sidewalls are formed to have contact resistance Can be reduced. 1 area is more than the increase of conventional technology, and The above and other objects and features of the present invention will become more apparent. Page 9 0548-A50295TWf (5.0); 93021; Forever 769.ptd 1248199 ' V. Invention Description (3) It is easy to understand, and the following is a preferred embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In accordance with a preferred embodiment of the present invention, Figure 1 shows a substrate 2 having a conductive region 7. Figure 2 illustrates a laminate structure 5. In the method of forming the first dielectric layer 10, the anti-reflection layer 2, and the sacrificial layer 30, a method is sequentially formed on a substrate 2. The above-described method of forming the laminated structure 5 may include a chemical vapor deposition method in which the same reaction chamber is simultaneously performed. Wherein, the first dielectric layer 10 is introduced into a reaction chamber of TEOS and 02KLPCVD, for example, to form a cerium oxide having a thickness of between 200 and 300 angstroms at a temperature of 50,000 to 70 ° C 〇. (Si〇2) layer, then introduce SiH4, NH3, and team 0 gas in the same reaction chamber to form a layer of oxynitride (S i Ο N ) as anti-reflective layer 2 ,, the thickness of which is large 3 0 0 to 400 angstroms; then, into the TEOS & 〇 2sLPCVI) counter-reaction chamber to form a cerium oxide layer as a sacrificial layer 3 ,, the thickness of which is between 2,000 and 3,000 angstroms Preferably, the thickness is between 5 () () and 1 () 〇 () angstroms. In accordance with a preferred embodiment of the present invention, the third to sixth embodiments are used to explain the formation of the via 5 〇. The above method can form a photoresist layer 35 on the sacrificial layer 30 by using conventional lithography techniques, as shown in Fig. 3. Then lithography | into a photoresist pattern 40, as shown in Figure 4. Then, through a subsequent etching step, for example, introducing a fluorine-containing gas such as CF4, CHF3, or C4F8 to the reactive ion etching machine to etch the sacrificial layer 3, the anti-reflection layer 20, and the portion not protected by the photoresist pattern 4? Dielectric layer 丨〇, as shown in Figure 5. Finally, the photoresist pattern 40 is removed to form a via 5 〇 which exposes the conductive region 7, as shown in Fig. 6. Among them, the depth of the via window 5大 is probably between 四 (4) to

1248199

2 3 Ο 0 angstroms. - In accordance with a preferred embodiment of the present invention, Figures 7 and 8 are used to illustrate the method of the conductive interposer 7 成, the method of the method, the bottom of the via 5 Q and the sidewall surface. The barrier layer 6 is formed by a deposition method, as shown in Fig. 7 of Shikou. The barrier layer 60 is formed, for example, by a LPCVD method to form a titanium nitride layer having a thickness of about 2 〇〇 to _ Egypt. A titanium (Tl) layer is formed by a PVD method, and the thickness of the basin is substantially between 200 and 30,000. Ai. ', and then an annealing process, the temperature is greater than 400 °C; CVD method (introduction of WFe and Si or I gas) deposited a conductive layer on the sacrificial layer 3, such as tungsten metal layer and filled in The layer window 5 is inside, wherein the conductive layer will be filled with the via 50. Then, the conductive layer other than the via 5 去除 is removed to form a conductive plug 70-, i.e., a planarization step is applied to form the conductive plug 7 〇 as shown in Fig. 8. The above method of removing the conductive layer other than the via 5 包括 includes a chemical mechanical polishing method. The thickness of the conductive plug 7 is substantially between 3 〇 (10) and 400 Å. Finally, at least a portion of the sacrificial layer 3 is recessed and a portion of the sacrificial layer 30a is left to cause the conductive plug 70 to protrude from the surface around it, as shown in FIG. = The above-mentioned conductive plug 70 protrudes from the surface around it by about 2 〇〇 to 3 〇〇, and the upper surface of the conductive plug 7 本 in the present embodiment is higher than the upper surface of the sacrificial layer 3 〇 a. The above concave silver step utilizes diluted hydrofluoric acid (Di luted

Hydrofluoric Acid; DHF) wet-etched a portion of the sacrificial layer (10). The etch rate of the anti-reflective layer and the sacrificial layer to DHF is 1:8. According to another preferred embodiment of the present invention, the etching step includes removing all of the sacrificial layers 30 until the anti-reflective layer 2 露出 is exposed.

1248199 V. Description of invention (5)

In accordance with a preferred embodiment of the present invention, the second to fourth figures are for explaining a method of forming a wire 90, comprising: depositing a second dielectric layer 8 on the substrate and covering the conductive plug 70, such as the first This picture shows. Next, an opening 85 is formed in the second dielectric layer 80 as shown in Fig. 11. Then, a wire 90 is formed at the opening 85 and is in contact with the above-mentioned conductive plug 7A. The protruding portion of the conductive plug 70 includes an upper surface 10Q and a sidewall 11〇, and the conductive wire 90 and the upper surface 1() of the portion and the sidewall 丨1 are formed, such as Figure 12 shows. Wherein, the second dielectric layer 8 includes a germanium dioxide layer, and the thickness thereof is substantially between 2Q00 and 3 〇〇〇. According to a preferred embodiment of the present invention, the plug includes a substrate 2, a conductive region 7, a first dielectric layer i, a reflective layer 20, a sacrificial layer 3A, a barrier layer 60, and a conductive layer. The plug 7 it it 矣 矣 矣 矣 electrical layer 2, and a wire 9 〇. Wherein, the conductive plug ~ " cross-lead f: /:: the human part includes - the upper surface 100 and the side wall 11 〇, ^ line 90 牙 弟 二 2 dielectric layer 8 〇盥 all of the above contact. / upper upper surface 100 and side wall 110 Although the present invention has been used in several preferred embodiments to define the date of the present invention, any familiarity: its sub-ethnic spirit and scope, The scope of protection of the invention is to be determined by the appended claims; therefore, the invention is defined by the scope of the invention.

1248199 BRIEF DESCRIPTION OF THE DRAWINGS Figures 1 through 2 2 are a series of cross-sectional views for illustrating the flow of a conductive plug in accordance with a preferred embodiment of the present invention.

The bottom element of the unit is the base conductor, the production ·-rc "" (((~(~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ The layer barrier electric second resistance to sacrificial light and light blocking guide case •, layer plug electric 8 5 ~ opening; 9 0 ~ wire; 100 ~ conductive plug upper surface; 11 0 ~ conductive plug side wall.

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Claims (1)

1248199 Patent Application No. 1. A method for manufacturing a conductive plug, comprising: sequentially forming a first dielectric layer, an anti-reflection layer, a sacrificial layer on a substrate, a power-receiving layer, and a surface for removing the concave surface. The method of 3., the method of sinking and forming, the method, the method of the method, and the method of the method of the invention, wherein the method comprises a layer of a window through the sacrificial layer, the anti-reflection layer and the first dielectric layer. Depositing a conductive layer and filling the via; a conductive layer other than the via to form a conductive plug; and at least a portion of the sacrificial layer, such that the conductive plug protrudes around it, such as the patent application scope The conductive plug of the conductive plug described in Item 1 protrudes from the surface around it by 200 to 300 angstroms. The manufacturing method of the conductive plug of claim 1, comprising: forming a second dielectric layer on the substrate and covering the conductive plug; and applying the conductive plug portion as the application comprises: the interlayer In the application, a wire is passed through the second dielectric layer to contact the conductive plug. The portion of the conductive plug of the third aspect of the invention that is formed by the plug includes an upper surface and a side wall, and the upper surface and the side wall are in contact. A barrier layer is formed between the manufacturing window of the conductive plug described in the first aspect of the patent and the conductive plug. The manufacturing method of the conductive plug described in the first paragraph of the patent range includes a conductive layer other than the via window, including chemical mechanical 0548-A50295TWf(5.0) ; 93021 ; Forever769.ptd Page 14 1248199 VI. Patent Application Grinding method. 7. If applying for the special law, the etching step 8 · If applying for the special law, the first one is in the layer of 2000 to 3000 angstroms, the thickness of which is larger than the enamel layer, and the thickness thereof is large. 9. If applying for the special law 'where the anti-reverse ( The conductive plug described in item 1 of the Diluted Hydr range includes the removal of all of the sacrificial layer. The manufacturer of the conductive plug of the first item 31 of the scope includes a layer of cerium oxide, the thickness of which is large The anti-reflective layer comprises a bismuth oxynitride (Si0 is between 300 and 400 angstroms; the sacrificial layer comprises a oxidized layer of between 500 and 1 angstrom. The conductive plug described in item 1 of the benefit range The radiant layer of the plug and the etch rate of the sacrificial layer to the diluted hydrofluoric acid of luoric Aci Η · nwp, &gt; ^ 八α, DHF ) are: 1 0 · as described in the scope of claim The method of manufacturing the conductive plug according to claim 5, wherein the barrier layer comprises the conductive layer of the conductive plug, or the layer of the conductive layer. a titanium nitride (TiN) layer having a thickness of between 200 and 300 angstroms; or a titanium (with 丨) &gt; The layer of 30,000 Å. Ul 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Soil and clothing 13. The method of claim 3, wherein the second dielectric layer comprises a gasification: the a side of the interposer is between 2000 and 300 angstroms. - an emulsifying stone layer, the thickness of which is greater than 14 · A conductive plug, including: 0548-A50295TlVf(5.0) ; 93021 ; Forever769.ptd Page 15 1248199 VI. Shen Qing patent range '~substrate, a laminated structure, placed on the substrate, including the first dielectric layer, primary antibody from bottom to top a reflective layer, a sacrificial layer; a via window extending through the sacrificial layer of the stacked structure, the anti-reflective layer, and a portion of the first dielectric layer; a barrier layer disposed on a side of the via window And a bottom surface; a conductive plug that fills the surface of the vial to highlight the surface around it. 1 5 . The conductive plug according to claim 14 of the patent application, wherein the conductive plug protrudes from the surface around it by about 20 爻 3 〇〇. The conductive plug of claim 14, further comprising: a second dielectric layer disposed on the substrate and covering the conductive plug; and a wire extending through the second dielectric The layer is in contact with the conductive plug. The conductive plug of claim 16, wherein the protruding portion of the conductive plug includes an upper surface and a side wall, and the wire is in contact with the upper surface of the portion and the side wall. The conductive plug of claim 14, wherein the first dielectric layer comprises a ruthenium dioxide layer having a thickness of between about 2 3000 and 3,000 angstroms; the anti-reflection The layer includes a layer of nitrous oxide oxide (Si〇N) having a thickness substantially greater than 300 to 400 angstroms; the sacrificial layer comprising a layer of SiO2 having a thickness of from about 500 to about 10 angstroms. The conductive plug of claim 14, wherein the depth of the via is substantially between 1700 and 2300 angstroms. </ RTI> <RTIgt; </ RTI> <RTIgt; A layer of titanium (TiN) having a thickness of between about 200 and 300 angstroms; or a layer of titanium (Ti) having a thickness of between about 200 and 300 angstroms. The conductive plug of claim 14, wherein the conductive plug comprises a tungsten (W) metal plug having a thickness of between about 30,000 and 4,000 angstroms. 2 2. The conductive plug of claim 16, wherein the second dielectric layer comprises a layer of dioxide dioxide having a thickness of between about 2,000 and 3,000 angstroms. 0548-A50295TWf(5.0) ; 93021 ; Forever769.ptd Page 17