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TW376534B - A semiconductor device and thereof - Google Patents

A semiconductor device and thereof

Info

Publication number
TW376534B
TW376534B TW087105623A TW87105623A TW376534B TW 376534 B TW376534 B TW 376534B TW 087105623 A TW087105623 A TW 087105623A TW 87105623 A TW87105623 A TW 87105623A TW 376534 B TW376534 B TW 376534B
Authority
TW
Taiwan
Prior art keywords
recesses
holes
floating gate
film
semiconductor device
Prior art date
Application number
TW087105623A
Other languages
English (en)
Inventor
Fumitaka Sugaya
Original Assignee
Pegre Semiconductors Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pegre Semiconductors Llc filed Critical Pegre Semiconductors Llc
Application granted granted Critical
Publication of TW376534B publication Critical patent/TW376534B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/043—Manufacture or treatment of capacitors having no potential barriers using patterning processes to form electrode extensions, e.g. etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Element Separation (AREA)
TW087105623A 1997-04-18 1998-04-14 A semiconductor device and thereof TW376534B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11632297 1997-04-18

Publications (1)

Publication Number Publication Date
TW376534B true TW376534B (en) 1999-12-11

Family

ID=14684119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087105623A TW376534B (en) 1997-04-18 1998-04-14 A semiconductor device and thereof

Country Status (3)

Country Link
US (3) US6288423B1 (zh)
JP (4) JPH113981A (zh)
TW (1) TW376534B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
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US6515326B2 (en) 2000-06-26 2003-02-04 Nec Corporation Semiconductor memory device and method of fabricating the same

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KR100351450B1 (ko) * 1999-12-30 2002-09-09 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
KR20010066386A (ko) * 1999-12-31 2001-07-11 박종섭 플래시 메모리의 게이트전극 제조방법
JP2002246485A (ja) 2001-02-13 2002-08-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
JP3559553B2 (ja) * 2002-06-28 2004-09-02 沖電気工業株式会社 半導体記憶素子の製造方法
KR100448895B1 (ko) * 2002-10-25 2004-09-16 삼성전자주식회사 상변환 기억셀들 및 그 제조방법들
US7098142B2 (en) * 2003-02-26 2006-08-29 Infineon Technologies Ag Method of etching ferroelectric devices
DE102004006002B3 (de) * 2004-02-06 2005-10-06 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Soi-Halbleiterbauelement mit erhöhter Spannungsfestigkeit
DE102004013388A1 (de) * 2004-03-17 2005-10-13 Schott Ag Anordnung zur Fluoreszensverstärkung
TWI263308B (en) * 2005-01-28 2006-10-01 Powerchip Semiconductor Corp Method of fabricating non-volatile memory
KR100781563B1 (ko) * 2005-08-31 2007-12-03 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법.
US7560334B2 (en) * 2005-10-20 2009-07-14 Atmel Corporation Method and system for incorporating high voltage devices in an EEPROM
US7605410B2 (en) * 2006-02-23 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5793525B2 (ja) * 2013-03-08 2015-10-14 株式会社東芝 不揮発性半導体記憶装置
JP6718115B2 (ja) * 2016-06-21 2020-07-08 富士通セミコンダクター株式会社 強誘電体メモリ装置
TWI696263B (zh) * 2019-05-16 2020-06-11 力晶積成電子製造股份有限公司 記憶體結構及其製造方法

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US5766993A (en) * 1996-11-25 1998-06-16 Vanguard International Semiconductor Corporation Method of fabricating storage node electrode, for DRAM devices, using polymer spacers, to obtain polysilicon columns, with minimum spacing between columns
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515326B2 (en) 2000-06-26 2003-02-04 Nec Corporation Semiconductor memory device and method of fabricating the same
US6677196B2 (en) 2000-06-26 2004-01-13 Nec Electronics Corporation Semiconductor memory device and method of fabricating the same

Also Published As

Publication number Publication date
JP2005184027A (ja) 2005-07-07
JP4352011B2 (ja) 2009-10-28
US6844268B1 (en) 2005-01-18
JP4901147B2 (ja) 2012-03-21
USRE42004E1 (en) 2010-12-21
US6288423B1 (en) 2001-09-11
JPH113981A (ja) 1999-01-06
JP2005303334A (ja) 2005-10-27
JP2008182261A (ja) 2008-08-07

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