TW335555B - Nonvolatile memory cell - Google Patents
Nonvolatile memory cellInfo
- Publication number
- TW335555B TW335555B TW086110856A TW86110856A TW335555B TW 335555 B TW335555 B TW 335555B TW 086110856 A TW086110856 A TW 086110856A TW 86110856 A TW86110856 A TW 86110856A TW 335555 B TW335555 B TW 335555B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon
- oxide layer
- layer
- memory cell
- nonvolatile memory
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19631147A DE19631147C2 (de) | 1996-08-01 | 1996-08-01 | Nichtflüchtige Speicherzelle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW335555B true TW335555B (en) | 1998-07-01 |
Family
ID=7801536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086110856A TW335555B (en) | 1996-08-01 | 1997-07-30 | Nonvolatile memory cell |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0916161A1 (zh) |
| JP (1) | JP2000515325A (zh) |
| KR (1) | KR20000035785A (zh) |
| DE (1) | DE19631147C2 (zh) |
| TW (1) | TW335555B (zh) |
| WO (1) | WO1998006139A1 (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10110150A1 (de) * | 2001-03-02 | 2002-09-19 | Infineon Technologies Ag | Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray |
| KR100426481B1 (ko) * | 2001-06-26 | 2004-04-13 | 주식회사 하이닉스반도체 | 코드 저장 메모리 셀 제조 방법 |
| DE10130765A1 (de) | 2001-06-26 | 2003-01-09 | Infineon Technologies Ag | Transistor-Anordnung, Verfahren zum Betreiben einer Transistor-Anordnung als Datenspeicher und Verfahren zum Herstellen einer Transistor-Anordnung |
| US6853587B2 (en) * | 2002-06-21 | 2005-02-08 | Micron Technology, Inc. | Vertical NROM having a storage density of 1 bit per 1F2 |
| DE10241172B4 (de) | 2002-09-05 | 2008-01-10 | Qimonda Ag | Halbleiterspeicher mit vertikalen Speichertransistoren und Verfahren zu dessen Herstellung |
| FR2861123B1 (fr) * | 2003-10-15 | 2006-03-03 | Somfy | Procede d'initialisation et de commande d'une installation comprenant des ecrans sensibles au vent. |
| DE10352641A1 (de) * | 2003-11-11 | 2005-02-17 | Infineon Technologies Ag | Charge-Trapping-Speicherzelle und Herstellungsverfahren |
| US7790516B2 (en) | 2006-07-10 | 2010-09-07 | Qimonda Ag | Method of manufacturing at least one semiconductor component and memory cells |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05110114A (ja) * | 1991-10-17 | 1993-04-30 | Rohm Co Ltd | 不揮発性半導体記憶素子 |
| US5436481A (en) * | 1993-01-21 | 1995-07-25 | Nippon Steel Corporation | MOS-type semiconductor device and method of making the same |
| US5408115A (en) * | 1994-04-04 | 1995-04-18 | Motorola Inc. | Self-aligned, split-gate EEPROM device |
-
1996
- 1996-08-01 DE DE19631147A patent/DE19631147C2/de not_active Expired - Fee Related
-
1997
- 1997-07-29 EP EP97937411A patent/EP0916161A1/de not_active Ceased
- 1997-07-29 KR KR1019997000742A patent/KR20000035785A/ko not_active Ceased
- 1997-07-29 WO PCT/DE1997/001600 patent/WO1998006139A1/de not_active Ceased
- 1997-07-29 JP JP10507343A patent/JP2000515325A/ja not_active Ceased
- 1997-07-30 TW TW086110856A patent/TW335555B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP0916161A1 (de) | 1999-05-19 |
| DE19631147A1 (de) | 1998-02-05 |
| DE19631147C2 (de) | 2001-08-09 |
| KR20000035785A (ko) | 2000-06-26 |
| WO1998006139A1 (de) | 1998-02-12 |
| JP2000515325A (ja) | 2000-11-14 |
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