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TW307037B - - Google Patents

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Publication number
TW307037B
TW307037B TW084107774A TW84107774A TW307037B TW 307037 B TW307037 B TW 307037B TW 084107774 A TW084107774 A TW 084107774A TW 84107774 A TW84107774 A TW 84107774A TW 307037 B TW307037 B TW 307037B
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TW
Taiwan
Prior art keywords
heat sink
item
semiconductor
layer
semiconductor device
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Application number
TW084107774A
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English (en)
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Olin Corp
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Classifications

    • H10W74/124
    • H10W40/778
    • H10W72/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • H10W72/073
    • H10W72/07336
    • H10W72/07338
    • H10W72/075
    • H10W72/077
    • H10W72/354
    • H10W72/381
    • H10W72/5522
    • H10W72/5525
    • H10W72/701
    • H10W72/884
    • H10W74/00
    • H10W90/736
    • H10W90/756

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

經濟部中央樣準局員工消費,合作社印製 Α7 Β7 五、發明説明(1 ) 本發明係關囊封半導鳢裝置之模製塑膠包裝》較詳言之 一種熱塊至少部分藏入模塑樹脂内以加強裝置〆散熱。 模製塑膠電子包裝提供集饉線路裝置環境保護。包裝如 PQFP(塑膠線組平封裝)及PLCC(塑膠含導線小片載醴)保護 囊封的裝置免受諸如潮濕污染及機械震動。 —種模製塑膠包裝在鈴木等US專利4,707,724號内説明》 其包裝有一導線架帶中間位置的模型附墊。半導體裝置結 合於墊電互連至導線架内端》—種聚合模塑榭脂囊封此装 置、模型附墊與内部導線端》 模製塑膠包装之一缺點爲散熱不良。作業期間半導鳢装 置產生之熱必須移除以維裝置之作業完整《有些熱經結合 線輿導線架發散,其餘被吸收入模塑樹脂。模塑樹脂爲不 良熱導體以致裝置溫度上升。爲防止裝置過熱、必須限制 供應裝置之能。 改善半導體裝置中散熱之一途爲在模製塑膠包装内納入 一種熱塊。熱塊供應散熱之加強途徑。其結果可供應較多 能量於半導體裝置而不致產生裝置溫度過高。 熱散佈器及熱塊均係導熱結構埋藏在模塑樹脂内以加強 半導體裝置中散熱。熱散佈器完全封藏在模塑樹脂内,而 熱塊至少有一面暴露於外面環境。本發明雖將以熱塊之語 詳細説明。但文内所含全部具鱧例同樣實用於熱散佈器, ’’散熱器’’之辭涵蓋熱塊、熱散佈器輿相關結構。 熱塊通常爲可随意與半導體装置直接接觸或 經模塑樹脂隔離裝置〇 本紙張尺度適用中國國家標準(CNS > A4规格(210X297公釐〉 ---------^------、玎------Μ —l· (請先閱讀背面之注意事項再填寫本頁) 307037 A7 B7 經 ▲ 部 中 央 橾 準 員 工 消 费 一合 作 杜 印 製 五、發明説明(2 ) 熱塊與模型附墊有別。模製附墊係用導線架同一材料製 作並與導線同一厚度,一般在0.13 mm與0.020 mm (0.005-0.020 吋)之間。薄模型附墊熱容量有限,其自裝置中去熱效用 爲模塑樹脂的導熱係數限制。熱塊與導線架並非一體,通 常比導線架厚。此额外厚度提高熱塊的熱容量,增加熱塊 容量自集饉電路裝置中去熱。 铜熱塊提供模製塑膠包裝以改善分散能力且成本低。不 過銲接導線後蓋期間銲劑弄濕熱塊β此過多銲劑於導線銲 接期間流至印刷線路板,能引起導線間或熱塊輿印刷線路 板上線路圈形間之電短路。 銅熱塊之其他缺點包括: •熱塊的導電性在電子裝置輿外部回路間不提供電絕緣。 •銅之重量(密度= 8.93g/cm3)增加模製塑膠包裝的重量》 ‘飼之熱膨脹係數爲矽之約三倍,矽基集體電路装置直接 結合於銅熱塊在裝置内誘生應變。溫度循環期間此應變 可使矽破裂。 •熱塊與聚合物模塑樹脂間界面爲水份入侵地點》水份因 升溫而膨脹,包裝基底能膨脹或破裂(”爆米花故應”)。 •銅與鎳板不配合多數模塑樹脂的典型黑色。模塑樹脂於 I. P、.銲料以與金屬表面不同速度反流期間模塑樹脂吸收 紅外(1. R ·)射線。表銲接期間在包裝内 謗生應變, 除铜外,熱塊用含銅或鋁組份的護面金屬製作,如在 -5- 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) (請先閱讀背面之注意事項再填寫本I )
*tT Μ I. 經濟部中央橾準局員工消责合作社印製 A7 B7 五、發明説明(3 )
Mahulikar等U S專利5,015,803號中發表者 改進電子包裝組价對模塑樹脂黏附力之一種方法爲作許 多搰以機械地鑌定樹脂如Tateno等在US專利4,589,0丨0號中發 表者β或者以一種對模塑樹脂黏附較佳的物質塗組份如 Crane等在U S專利4,888,449號中所發表》 此等處理方法未減輕包装重量,未大增自半導饉装置傳 熱至包裝表面a 因此,本發明之目的在提供有部分埋藏散熱器的模製塑 膠電子包裝,比^^£^塊重量較低,且/或對聚合物模 塑樹脂改進黏附。一附加目的。本發明某些 具鳢例内熱膨脹係數矽比銅較接近。本發明之一特色爲半 導髏裝置與熱散佈器間藉使用一種熱脂或聚合物膠黏劑諸 如B -階段環氧物而大減熱阻》本發明之又一特色爲有堅具 饉例内熱散佈器至少局部塗復陽極化作用層·》本發明一優 點在此陽極化層產生一均勻粗接表面對模塑樹脂增進黏附 性》熱散佈器尚有另一優點在其重量大幅比同樣幾何形銅 散熱器爲小。 根據本發明提供一半導禮包装。此包装囊封至少—項半 導體裝置。有第一面鄰近半導體輿一相反第二面的散熱器 亦至少局部爲模塑樹脂囊封。散熱器之密度比銅的密度低 ,其導熱係數不變或者自第一面至第二面上升。半導體装 置與半導||包装的外部設備電互連》 上述目的、特色及谩點將自以下説明與躅示更趨明顯。 圖1表現以往技術所知一摻合熱分佈器的模製塑膠包裝之 _______ -6- 本紙張尺度遑用中國國家橾隼(CNS〉Μ说格(210X29?公釐) (請先閱讀背面之注意事項再填寫本頁) Λ *1Τ 經濟部中央樣準局貝工消费,合作社印製 307037 A7 _B7_ 五、發明説明(4 ) 剖視圈》 圈2表現根據本發明具鱧例結合一鋁散熱器的模製塑膠 包装之剖視圖。 圈3表現根據本發明第二具鳢例結合一鋁散熱器的模製 塑膠包裝之剖視圖。 «4表現評估模塑榭脂黏附於本發明鋁散熱器用之測試儀 器a 圈5表現根據本發明一具鳢例模製塑膠包裝結合一種金 屬/陶瓷複合物熱塊之剖視圈》 圖1表現剖面描繪以往枝術上所知一模製塑膠包装1 〇囊 封一半導體裝置丨2。模製塑膠包装10含導緯架〗4有許多内 在導線端16與外部導線端18。内在導線端16由連接線20 電亙連至半導饉裝置12»連接線20爲典型.025公厘(·〇〇ΐ吋) 的小直徑金、铜或其合金所製線。或者代替連接線,可用 諸如膠帶自動連接(TAB)中所用的薄條銅箔,半導體裝置 12結合於一用導線架14相冏材料製之模型附墊22 ,中心位 置在一由内在導線端16界定的孔内。半導體裝置12由一第 一結合機構2 4例如低溶點銲劑(如金舆錫或結輿踢之合金) 或一聚合物膠黏劑連接於模型附墊22。若用聚合物醪黏劑 則第一結合機構較佳經添加金屬粉如銀使其導熱。 模型附墊22然後由第二結合機構28結合至熱塊26。熱塊 26普通由铜或铜合金形成以増加散熱,可係護面材料0 第二結合機構28係任何逋當銲劑或膠黏劑》同前第一結 合機構,第二結合機構28可充填金屬粉以加強散熱》半導 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) ----------{------訂------A.- (請先閱讀背面之注意事項再填寫本頁) 經濟部4-央橾準局貝工消費合作社印袈 A7 B7 五、發明説明(5 ) 禮装置12、内部導線端16、模型附墊22、第一24與第二 28結合機構。以及一部分熱塊26於是封裝在模塑樹脂30内 〇 代表本發明第一具體例的模製塑膠電子包裝在躅2内以剖 面描續例解。實質上達成如圈1中所述結構相同功能的模 製塑膠包装4〇之諸特色用相冏參考數字識別。其以不同方 式完成相關功能的模製塑膠包裝4 0之諸特色則用加撇參考 數字指示。 一種鋁或鋁合金散熱器26’較佳輿半導體裝置12熱接觸 。所謂熱接觸意指半導禮装置12產生的熱能前進一不斯途 徑至铭或鎔合金熱散佈器2 6'之外部表面44而不通過模塑 樹脂30。 模塑樹脂係不良導熱饉。根據本發明較佳具體例保持裝 置輿散爇器間熱接觸改善散熱作用〇模塑樹脂30宜僅部分 封裝熱塊26'。熱塊26’的外部一面宜不封裝以儻量加大裝 置產生之熱傳熱至周®環境。不過全部封裝的熱散佈器仍 屬本發明範圍·> 半導體装置12靠第一結合機構24連接模型附墊22。第二 結合機構28'連接模型附墊22於鋁或鋁合金熱塊26·。由以 往技術所知第二結合機構28’可係一低熔點銲劑或聚合物膠 黏劑,一種導熱脂膏,或下述之一種Β -隋段環氧化物。亦 可望保持熱散佈器輿印刷線路板或其他外在結構間的熱接 觸以加強去熱》可利用熱脂,或若熱散佈器係不導電趙, 可用一銲劑》 _ -8- 本紙張X·度適用中國國家揉準(CNS ) Α4規格(210X297公釐) L---------------1T------減— (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消黄合作社印製 307037 A7 _____B7_ 五、發明説明(6 ) 鋁或鋁合金熱塊26’經暘極處理》陽極化層42改善耐腐 蝕性及對模塑樹脂30的黏附性二者。陽極化層雖可具任何 彩色或透明,以黑色(色調黑至灰)爲佳。黑色放射最多熱 ,最有效自包裝中散熱至周園環境〇黑色亦匹配模塑掛脂 之典型色。結果包裝之紅外吸收特徵不受熱塊影響。反流 銲接期間本發明包裝呈現如包裝欠缺散熱器相间溫度線圖 〇 陽極化層42之黑色可藉添加染料或顏料形成,但最耐久 的顏色係用整饉色彩陽極化製得如Pasqualoni等U S專利 5.066,368中發表。陽極處理後塗層可密閉以填塞陽極處理中 固有的孔》—種逋宜封閉法爲在加壓蒸汽中暴露3 0 - 6 0分 鐘。較佳不封密此等孔穴,因孔穴内模塑樹脂之機械封鎖 改善黏枏。 黑色整鳢陽極處理之最適宜鋁合金爲ASM(美國金屬學會) 定名爲3xxx及6xxx系者。 3xxx系的合金含多達約1.5 %重量鐘輿其他合金元素一起 。合金特徵爲查身爸良好及強度比定名1?〇«系的合金(99.00 %以上鋁)高約20〇/〇。 6xxx系會金含鎂輿矽成近似形成Mg2Si之比例。合金特徵 爲成形能力良好及機器加工性良好》能熱處理成脱溶硬化 合金。 最佳_銘合金爲鋁合金3003有指定成分約0.12 %重量铜、約 1.2 %重董錳及其餘鋁。在含硫酸與磺化水楊酸的混合物之 電解液内經整髏顏色陽極處理可製得黑色陽極化廣,混合 _ -9- 本紙張尺度遑用中國國家標準(CNS > A4规格(2丨0X297公釐〉 I--.------{------1T------Μ I (請先閲讀背面之注意事項再填寫本頁} A7
五、發明説明(?) 經濟部中央樣準局員工消黄合作杜印製 液内濃度範圍自約1 -4g/l II2S04與約50-120 g/丨c7II6〇6S » 迅速提升電池電壓使電流密度在的3分鏡内自零升至75 A/dm2 以上(70 ASF)。 模塑樹脂黏附於陽極化熱散佈器由機械鎖閉進—步加強 。經陽極處理參數之逋當控制,陽極化層内生成所須大小 的孔味。约50至的500埃之孔徑提供加強黏著力而不減弱 層之強度3較佳孔徑爲約7 5至約200埃> 陽極化層42之最小厚度在能有效預防熱散佈器26,的腐 蝕。陽極化廣42應儘可能薄而保持有故,因爲金屬底質比 陽極化層爲較佳熱導鳢。陽極化層4 2的較佳厚度係自約 0.0025 mm 至約 0.076 mm ( 〇_1-3 密耳),以約 〇.〇U mm 至約 0 026 mm(0.5-1.0密耳)爲佳。 鋁或鋁合金熱散佈器之優點包括其與相對銅或鏑合金熱 散佈器重量較低約6〇%。如Mahu丨ikar等在US專利 4,9 3 9,3 1 6中發表,有鋁基組份的電子包裝熱分散作用驚 詩地堪輿有銅基組件的相似構態包裝相比。相信其原因爲 自半導饉裝置12散熱至熱散佈器26,表面44之限制因素係 導熱經過第一 24與第二28,結合機構之故。有鋁或鋁合金 熱散佈器之包裝與一帶铜散熱器的可相比包裝之裝置能移 除大約等量之熱〇 陽極處理層4 2提供熱散佈器2 6,對鹽喷霧腐蝕性之抗拒 以及其他耐腐蝕性。黑色比反射金屬表面如铜、鋁或鎳提 供較佳導熱性,而且靠變化陽極處理期間的尖峰電流密度 可在陽極化層4 2表面内製得控制直徑的孔脒》此等孔脒提 ___-10- 本紙張尺度適用中國國家揉準(CNS ) Μ規格(210X297公麓) (請先閲讀背面之注意事項再填寫本頁) 訂 滅! 經濟部中央標準局員工消黄合作社印製 A7 B7 五、發明説明(8 ) 供改進的機械封鎖予模塑樹脂3〇。 鋁製熱散佈器經陽極處理時與未經陽極化的組件在膠黏 性方面之改善相信係基於模塑樹脂的化學相亙作用及機 械封鎖二者。藉變化陽極處理參數(即電流或溶液補充)獲 致的粗糙陽極化層比平滑的陽極化表面供應較佳黏著性。 陽接化層42之另一優點爲電隔離β陽極處理的鋁散熱器 爲非導電禮/裝在散熱器上的半導髏裝置與散熱器不在同 一電壓電位’接包裝外面的電壓脈動不會影響半導鳢裝置 不利。又當外導線端以銲劑電解覆蓋時爲包裝模塑後之典 型作業,非導電性的散熱器將不爲銲劑塗敦, 熱塊26'|i附於模塑樹胳進一步受機械封領改善β如圖2 所示,熱塊26,之上面46角可延伸出下面44之角外使模塑 樹脂局部封裝熱塊。下面44希望保持暴露於大氣以加甚散 熱。其他造形亦可用以代替環氧模塑樹脂以機械地鎖定熱 塊,例如隆起、孔洞或邊緣變形等a 模製塑膠包裝40之散熱作用可用一種熱脂或導熱的聚合 物膠黏劑如B -喈段的環氧物作第二結合機構2 8,再加改善 "熱脂28’爲任何適當導熱之脂资如矽嗣脂1 一種熱腐範例 爲 Stamford,C丁的 Omega Engg. Tnc.製之 Omegatherm 24 » 用熱脂時模型附墊2 2與熱塊2 6,保持熱接觸,但非結合 其上。結果熱散佈器26,與半導體裝置12間之熱膨脹係數 不匹配不會在半導禮装置I2上產生機械應力。熱膨脹係數 不配合所產生的任何應力經模型附墊移動牴消。熱接觸由 熱脂之相應運動維持》 -11- 本紙張尺度適用中國國家標隼(CNS ) A4規格(210X297公釐) I. . f------iT------滅- (請先閱讀背面之注意事項再填寫本頁) 經濟部中央橾準局員工消Jf合作社印製 A7 B7 五、發明説明(9 ) 經熱脂所獲利益不限於铭散熱器’並改善散熱器與半導 禮裝置間有不配合熱膨脹係數的一切電子包装。脂青對鋼 或銅合金散熱_器等特別適用》欲加強黏附、銅散熱器較佳 塗—種第二金屬如U S專利4,888,449號發表的鎳。 或者模型附墊22可用一熱加強的聚合物膠黏劑如一種充 ,銀的環氧物结合於鋁或鋁合金熱塊26,。一具禮例内熱塊 26_的上表面46以一層導性膠黏劑28,预塗復成膜狀或液體 薄層並熟化至Β -階段。所謂” Β ·喈段"意指環氧物經部分熟 化。出現黏著於模型附墊26,並未完全熟化反應》 在模槽内放置其上層疊聚合物膠黏劑2 8,的熱塊2 6,。隨 後將含半導體裝置!2及模型附墊2 2的導線架組集故進模内 。導線架組集與鋁或鋁合金熱塊26’除底面44外於是用例 如注模法封裝在模塑樹脂3 0内》模塑期間加熱模塑樹脂以 減退黏度,熱樹脂或完全熟化或至少部分熟化聚合物膠黏 劑28 如有必要,在後模塑熟化期間發生聚合物膠黏劑 28’之完全固化。一種裸準後模塑固化爲在大氣中加熱模製 包裝歷數小時》 合宜的聚合物膠黏劑失重甚低(即膠黏劑除氣不多)故模 製及後熟化期間不生氣泡或空味。聚合物膠黏劑應力亦應 極低,即有高順應度以補憤鋁或鋁合金熱塊26·與半導醴装 置12間之熱膨脹不配合係數。聚合物膠黏劑之較佳厚度係 自约0.025 mm至約OJl mm ( ϋ.001 - 0_ϋ2ϋ吋),適宜厚度自約 0.051 mm 至約 0.25 mm ( 0.002 - 0.010 对)。 除鋁外散熱器之其他適用材料在室溫(2(TC)時有低於銅 -12- 本紙張尺度適用中國國家橾準(CNS > A4規格(210X297公釐) I---:------^------1T------丨 {請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消费吾作社印製 A7 B7 五、發明説明(IQ ) (8.93 g/'cm3)或主要爲銅金屬的合金之密度以僮量減輊模製 塑膠包裝的重量。散熱器密度較佳在約8g/cm3以下,最好 低於約5g/cm3«散熱器26,自第一面46鄰接半導體裝置12 至相反第二面44之導熱係數或者不變或者升高》 有些具鱧例中希望散熱器有比較接近矽而非銅的熱蟛脹 係數(C.T.E.)。較佳C/r.t;.不超過半導醴裝置者二倍,最 好在半導體裝置者的約20%内。 其他具鳢例内例如内導線部分結合於散熱器時要求散熱 器有大約等於導線架之C.T.E.,典型爲銅。 散熱器亦係不導電,其介電常數小於約4 0,較佳超過約 以上任何金屬、合金或複合物可用導熱材料如〇_〇〇13 mm 至0.025 mm ( 0.00005 — 0.001吋)厚層的金鋼石膜塗後。金鋼石 膜通常用喷鍍或蒸汽沉積法塗敷。 能陽極化的輕重董金屬構成一組散熱器。此組包括能陽 怪化的金屬如教(密度4.51 g/cm3 ),鋅(密度7.13 g/cm3 ),錢 (密度1.74g/cm3) 與此等金屬之能場極化的合金。 鈦爲最佳乃因此金屬易得且易於經機械加工如鍛造製成 所須形狀》鈦用許多含硫酸的相同商品溶液陽極處理鋁者 陽極化β 陽極化作用所生氡化物膜對聚合物模塑樹脂有良好黏附 力係因氧化物表面產生化學親和力及巨觀表面粗糙提供機 械鎖定。氧化物膜厚度低於約0.07 mm ( 0.003吋)以儘董減少 熱阻》陽極化層厚宜自約0.008 mm至約0.04 mm ( 0.0003 «0.0015 -13- 本紙張尺度逋用中國國家標準(CNS ) Α4规格(210Χ297公釐) (請先閱讀背面之注意事項再填寫本頁) *τ
經濟部中央橾準局員工消费,合作杜印製 A7 B7 _ 五、發明説明(11 ) 付),較佳自约 0.012 mm 至約 0.025 mm ( 0.0005 - 0.001 畔)。 第二組逋宜材料爲複合榦如鋁/碳化矽、鋁/氧化鋁、鋁/ 氮化鋁及鋁/石墨。複合物係用金屬粉與陶瓷粉混合,二者 經熱與壓力组合結合製成。如US專利4,882,212號中Singhdeo 等發表複合物随意含一種玻璃黏結劑能訂製成導電或不導 電。熱膨脹係數能訂定於所須値。 複合物性質可由改變金屬/陶瓷比率而逐漸變化舉例可 期望有第一面46導電作接地面或中間介入用。或者可望製 作第二面44有升高的導熱係數以增強熱自電子包裝流動。 複合物能以一外在金屬層塗霞如Lin在US專利5,043,535號 中發表者以改善密封》複合物輿一塗料粉及一種稱粒介質 合併β在圓桶内旋轉時稠粒驅使塗料粉進複合物表面。金 屬粉係鋁時能形成陽極化層。 其他適宜複合物包括在聚合物底質内的導熱纖維。一較 佳複合物係一種填充约5至約9 5 %濮積比碳纖維之環氧底 質。 在金屬上形成氮化物、碳化物或氮化碳表面可製成更耐 腐蚀的鋼或其他金屬而排除鍊鍍必要,有些金屬如鋼可藉 暴露於適當高溫大氣氮化或碳化,銅必須額外處理β如 Breedis等在U S專利5,〇96,508號中所發表,若Q係選自兼能溶 於銅且與氮反應之元素,則基本合金C u Q可受氮化^ q典 型爲約1%至約10%重f比選自鈦、鋁、鉻、鲒及妒等之一 種或多種元奢。氮化物或碳化物膜之厚度一般自的1〇埃至 約1公忽。 -14- 本紙張尺度遑用中國國家標準(CNS )Μ規格(21〇乂297公策> ---------/ -______丁______气 I ^ i ^ (請先閱讀背面之注意事項再填寫本頁) 307037 A7 經濟部中央樣準局員工消費,合作社印裝 _______B7五、發明説明(丨2 ) 若需電隔離,可將氮化物、碳化物或碳氮化物層塗f一 薄層絕緣物如氧化鋁,絕緣物能用任何已知方法如ρνΕ>( 物理蒸汽澥積作用)澉積。 圖3内剖面描繪所示的模製塑膠包裝5 0代表本發明另一 具體例。熱塊26'較佳爲鋁並包含黑色整鳢色陽極層42, 經弟二結合機構5 2連接導線架1 4。第三結合機構5 2可.係適 當電絕緣機構如聚合物膠黏劑。適宜第三結合機構52爲一 環乳物諸如 Abe丨stik 550 ( Abelstik Labs,Gardenia, Ca丨·)》較佳用 第四結合機構56結合一蓋54於導線架14之反面。蓋54可 自任何逋當材料如陶瓷、塑膠、玻璃或金屬形成。多數散 熱作用係經過散熱器2 6'之底面44,故不嚴限蓋5 4的導熱 特性。較t要者蓋54應有熱膨脹係數與散熱器261者大約 相配以避免包裝加熱或冷卻期間挽曲。較佳具體例内蓋5 4 亦用鋁或鋁合金製》 第四結合機構可係任何電絕緣機構如聚合物膠黏劑3組 集随後在模塑樹脂30内封裝,使散熱器26’之底面44暴露 於大氣馕量擴大熱播散。此具體例的優點在半導體装置12 之電有效面58與結合線20並不接觸模塑掛脂30。包裝囊封 期間模塑樹脂3〇熱而以高速進行。輿電有效面58接觸可能 磨損其面上所製電路或破壞結合線20 ·>模製後固化樹脂30 有一與丰導體装置1 2不同的熱膨脹係數。溫度波動期間半 導饉裝置12有相對模塑樹脂30之活動。蓋54產生模穴60 保護半導體装置1 2的電有效面58以及結合線20不接模塑樹 脂30 » (請先閱讀背面之注意事項再填寫本頁) • HL _
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A -15- 本纳•張尺度適用中固國家橾準(〇«)八4规格(210乂297公羞) A7 五、發明説明(丨3 ) 一未經金散熱器雖可提供上述某些利益 ,衣發明的充分優點係以陽極處理的鋁散熱器達致。弩體 黑色和加大自散熱器露出面中導熱》陽極化層増進散G 與模塑環氧物間黏著性,由以下實例中彰頰。實例旨在例 _而非限制。 實例 固4説明的測試儀器由二鋁合金3003條72局部封裝在一塊 模塑樹脂30内製得。如參考箭頭74圈解以Instron張力測試 機(Instron Corporation,Canton Massachusetts)在反對方向拉彳申條 7 2。測試條7 2作未塗復的鋁合金3003及有整鱧陽極處理層 的鋁合金3003二者評償。其他測試條7 2封裝在樹脂塊内, 模製組集放進121X:與100%相對濕度的壓力鍋中。暴露於 壓力鍋内歷時90小時〇表1指出自模塑樹脂30之塊内取出 測試條7 2所須的力。 (請先閱讀背面之注意事項再填寫本頁) 訂 A ! 經濟部中央標準局員工消費_合作杜印製 表1 測試條件 鋁合金3003 陽極處理的鋁合金3003 平均 標準偏差 平均 標準偏差 熟化的 4.86 MPa 1.37 6.66 MPa 0.41 (665 psi) (199) (966 psi) (60) 在壓力鋼内 4.10 MPa 1.29 5.78 MPa 0.61 96小時 (594 psi) (187) (838 psi) (88) -16- 本紙張尺度逋用中國國家標準(CNS ) Α4规格(2丨0Χ297公釐 經濟部中央揉準局負工消费合作社印製 Α7 Β7 五、發明説明(丨4 ) 表1證明模塑樹脂30對陽桠化鋁熱條72之黏著力至少比 模塑樹脂對未經陽極處理的鋁試條之黏著力大45%。壓力 鍋暴露後察見相似改進β 自表1纪錄的標準偏著可見一附帶利益β陽極處理後獲得 一致結果指出整禮色彩陽極化作用產生的表面孔隙之均勻 分散比未經處理的金屬随機表面所得者呈現更均勻。 上述本發明具體例雖包括單一半導體装置與鋁或鋁合金 散熱器熱接觸,本發明範圍内可有許多半導髏裝置輿單一 散熱器熱接觸。舉例Sawaya之US專利5,124,783號發表裝在模 型附墊上的線路圈案。許多半導鳢装置結合於模型附墊並 電互聯至線路阕案》發表的包裝之散熱作用經利用本發明 散熱器可大爲改善,於是得以使用較高功率半導髏裝置或 較大密度或數量之裝置。 本發明較佳具饉例雖集中於鋁或鋁合金底質上的陽極化 層,促進黏著的塗層之有利影饗亦可遴用於其他底質。此 等其他底質包括鋁基複合物如鋁-破化矽及鋁基化合物等如 氪化鋁》 本發明較佳具雅例雖集中於塗覆鋁或鋁合金散熱器之陽 極化層,相信其他加強黏著性的塗層亦屬有利β此等塗料 包括路、鋅、鉻輿鋅的混合物以及鉻與磷之混合物等。 一種範例選擇的塗料爲鉻輿鋅的共殿積層》此塗層改善 模塑榭脂對鋼或銅合金底質之黏著性如陳等共同讓渡的us 專利5,300,158中發表,較佳塗料有鋅對鉻比超過約4 : 1。 共激積的路鋅層並不產生如陽極化層所得的電隔絕作用 -17- 本紙張尺度遑用中國國家標準(CNS ) Α4规格(210X297公羞) (請先閱讀背面之注意事項再填寫本頁) 、vs
307037 經濟部中央樣準局貝工消費_合作杜印製 Α7 Β7 五、發明説明(丨5 ) °共嚴積層能激積於陽極化層上以維持電隔離。或者若電 隔離作用非必要,可塗敷黏著加強的塗料於饫何散熱器.。 半導鳢裝置舆外在電路間之電亙聯雖已以導線架之術語 說明’亦可利用其他電互聯諸如傳導通路及终端梢等。闽 5例解剖面插燴中此一選擇性電互聯。一種半導醴包裝8〇 有一熱塊26’,雖説明爲陶瓷/金屬複合物,可係前文發表 之任一種散熱器。半導醴裝置12與電路交點82經結合於熱 槐26’》電路交點82爲任何導電材料如铜箔或鈀/鎳敷金屬 。結合線20電互聯半導體裝置至電路交點82。一電互聨 84在此爲銅合金终端梢,電互聯至電路交點至少延件至 包裝8 0的周緣8 6。模塑樹脂至少封裝半導髖裝置丨2與一部 分熱塊26' » 前文説明的任一種電子包裝中半導體裝置可直接結合於 教熱器或連接至其間的模型附勢。 本發明電子包裝雖已以包裝術語包括導線架說明,同壤 能順應無導線包裝、梢柵線列及球柵線列包裝等。 顯見根據本發明已提供一種陽極處理的鋁散熱器完全滿 足文内前述的目標、方法與利益》本發明雖已在其明確具 體例組合内説明,業界技術者按照前文敘述顯然可作許多 選擇、條飾及故變《因此預定包括所有此等選擇、修飾及 改變屬於附綠申請專利部分之精神輿廣範圍内。 -18- 本紙張尺度適用中國國家標率(CNS > Α4规格(210Χ297公釐) -----------f -------IT------M I (請先閲讀背面之注意事項再填寫本頁)

Claims (1)

  1. 2 第84107774號專利申靖聚- 中文申請冬利範团你必太⑻签 -------一 _'4 六、申請專利範圍 Βτ 1. 一種半導體裝置(4〇, 8〇),特徵在: 至少一項半導體裝置(12); 散熱器(26’)有第—面46鄰接該半導髏裝置(12)與相 反第二面(44),該散熱器(26,)之密度低於銅或主要銅 口金者其導熱係數爲常數或自該第一面(46)增大至該 第二面(44),其中該散熱器(26,)係一種選自鋁、鈦、 鋅、鎂及其合金¥之能陽極化的金屬; 該半導趙裝置(12)與該半導體包裝(40,8〇)的外部間 有電互聯(14,84);及 一種模塑樹脂(3〇)封裝該半導體裝置(12)與該散熱器 (2 6 ')之至少—部分。 如申請專利範園第!項之半導體包裝(4〇,8〇),特徵在該 散熱器(26')之密度低於約5g/ cm3 ° 3. 如申請專利範圍第1項之半導體包裝(40, 80),特徵在該 散熱器(26’)之熱膨脹係數不超過該半導體裝置(12)者 之二倍。 4. 如申請專利範圍第1項之半導體包裝(4〇,8〇),特徵在該 散熱器(261)以一厚度自約〇 008麵至約〇 〇4麵之陽極化 作用層(42)塗復。 5_如申請專利範圍第!項之半導體包裝(4〇,8〇),特徵在該 散熱器(261)爲一種金屬/陶瓷複合物。 6 .如申請專利範团第5項之半導體包裝(4〇,8〇 ),特徵在該 散熱器(2 6 ’)之該第一面係電導性。 7_如申請專利範团第5項之半導體包裝(4〇,8〇),特徵在該 本紙張又度逋用中國國家榡準 ( CNS > Α4洗格(210Χ297公簇) _ 「装-- (請先Μ讀背面之注意事項再填寫本筲) 訂 經濟部中央標率局Λ工消費合作社印製 經濟部中央橾準局負工消費合作社印製 A8^7037 ?8s D8六、申請專利範圍 散熱器(2 6 ’)經以塗層(4 2 )塗覆。 8.如申請專利範圍第7項之半導體包裝(4〇, 80),特徵在該 塗層(42)爲箱。 9 _如申請專利範圍第1項之半導體包裝(40,80 ),特徵在該 散熱器(26·)係一種含導熱纖維的聚合物基質。 10. 如申請專利範圍第9項之半導體包裝(40,80),特徵在該 散熱器(2 6 J係一種含約5 0 %至約9 5 %體積比石墨纖維 的環氧物基質。 11. 如申請專利範团第1項之半導體包裝(40, 80),特徵在該 散熱器(2 6 〇係一塗覆不導電層(.4 2.)之金屬或金屬合金 〇 12. 如申請專利範圍第11項之半導體包裝(4〇,8〇),特徵在 該不導電層(42)係選自氧化物及金鋼石薄膜等。 13. 如申請專利範圍第1項之半導體包裝(4〇,8〇),特徵在該 散熱器(26·)係一塗覆耐腐蝕層(42)之金屬或金屬合金 〇 1 4 .如申請專利範圍第i 1項之半導體包裝(4〇,8〇),特徵在 該耐腐蝕層(42)選自碳化物、氮化物及碳氮化物。 I5· —種半導體裝置(40),特徵在: 至少一項半導體裝置(12); 一種金屬散熱器(26,)至少以一種電隔絕黏性加強層 (42)局部塗復’其中該電隔絕黏性加強層(42)係選自陽 極處理的銘、鉻、鋅、鉻與鋅的混合物及鉻與磷的混合 物; "2 - 本紙張尺度適用中國國家標準(CNS ) A4g ( 210X297公着 (请先K讀背面之注意事項存填寫本萸) Γ 裝. 订 307037申請專利範圍 A8 Bg C8 D8 經濟部中央梯準局真工消費合作社印装 —項有許多内部(16)與外部(18)導線的導線架(14), 該内部導線(16)電互聯(2〇)至該半導體裝置(12);與 一種模塑樹脂(30)封裝該半導體裝置(12),該導線架 (14)之該内部導線(16)及一部分該金屬散熱器(26,)。 16. 如申請專利範圍第15項之半導體包裝(4〇),特徵在該散 熱器(26 )係用銘、銘合金或銘基材料製。 17. 如申請專利範園第15項之半導體包裝(40),特徵在該黏 性加強層(4 2 )係路與鋅的共澱積層。 18. 如申請專利範圍第15項之半導體包裝(40),特徵在該黏 性加強層(4 2 )係陽極處理的鋁。 19. 如申請專利範圍第15項之半φ體包裝(40),特徵在該散 熱器(26〇係用銅、銅合金或銅基材料製。 20_如申請專利範圍第19項之半導體包裝(40),特徵在該電 隔絕的黏性加強層(4 2 )係選自氧化物與金鋼石膜。 21. 如申請專利範圍第19項之半導體包裝(4 0),特徵在該散 熱器(26J爲塗覆一耐腐蝕層(42)的金屬或金屬合金。 22. 如申請專利範困第21項之半導體包裝(40),特徵在該耐 腐蝕層(42)係選自碳化物、氮化物及碳氮化物。 23. 如申請專利範圍第22項之半導體包裝(4 0),特徵在該散 熱器(26·)係一合金CuQ,其中Q選自欽、銘、鉻、錄與 矽,又該電隔絕黏性加強層(42)爲Q氮化物。 -3 - 本紙張又度適用中國國家橾準(CNS ) A4洗格(210X297公釐) : 「裝-- (請先聞讀背面之注意事項再填寫本頁) 訂
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660471B (zh) * 2017-10-06 2019-05-21 財團法人工業技術研究院 晶片封裝
US10622274B2 (en) 2017-10-06 2020-04-14 Industrial Technology Research Institute Chip package

Families Citing this family (208)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6058602A (en) * 1998-09-21 2000-05-09 Integrated Packaging Assembly Corporation Method for encapsulating IC packages with diamond substrate
JPH0944269A (ja) * 1995-07-25 1997-02-14 Fujitsu Ltd 電子機器および電子機器用筐体並びに筐体の製造方法
US5854511A (en) * 1995-11-17 1998-12-29 Anam Semiconductor, Inc. Semiconductor package including heat sink with layered conductive plate and non-conductive tape bonding to leads
US5793613A (en) * 1995-12-29 1998-08-11 Sgs-Thomson Microelectronics S.R.1. Heat-dissipating and supporting structure for a plastic package with a fully insulated heat sink for an electronic device
US5907189A (en) * 1997-05-29 1999-05-25 Lsi Logic Corporation Conformal diamond coating for thermal improvement of electronic packages
IL121449A0 (en) * 1997-08-01 1998-02-08 Body Heat Ltd Adhesive composition for electrical PTC heating device
US6705388B1 (en) 1997-11-10 2004-03-16 Parker-Hannifin Corporation Non-electrically conductive thermal dissipator for electronic components
US6049217A (en) * 1997-12-30 2000-04-11 Intel Corporation Thermally enhanced test contactor
US6072322A (en) * 1997-12-30 2000-06-06 Intel Corporation Thermally enhanced test socket
US7270867B1 (en) 1998-06-10 2007-09-18 Asat Ltd. Leadless plastic chip carrier
US6229200B1 (en) 1998-06-10 2001-05-08 Asat Limited Saw-singulated leadless plastic chip carrier
US8330270B1 (en) 1998-06-10 2012-12-11 Utac Hong Kong Limited Integrated circuit package having a plurality of spaced apart pad portions
US7071541B1 (en) 1998-06-24 2006-07-04 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
US6143981A (en) 1998-06-24 2000-11-07 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
US7030474B1 (en) 1998-06-24 2006-04-18 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
US7005326B1 (en) 1998-06-24 2006-02-28 Amkor Technology, Inc. Method of making an integrated circuit package
US7112474B1 (en) 1998-06-24 2006-09-26 Amkor Technology, Inc. Method of making an integrated circuit package
US6893900B1 (en) 1998-06-24 2005-05-17 Amkor Technology, Inc. Method of making an integrated circuit package
US7332375B1 (en) 1998-06-24 2008-02-19 Amkor Technology, Inc. Method of making an integrated circuit package
US6093064A (en) * 1998-06-30 2000-07-25 The Whitaker Corporation Enhanced emissivity electrical connector
US6114048A (en) * 1998-09-04 2000-09-05 Brush Wellman, Inc. Functionally graded metal substrates and process for making same
US6281568B1 (en) 1998-10-21 2001-08-28 Amkor Technology, Inc. Plastic integrated circuit device package and leadframe having partially undercut leads and die pad
US6529379B1 (en) * 1998-10-13 2003-03-04 International Business Machines Corporation Article exhibiting enhanced adhesion between a dielectric substrate and heat spreader and method
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
JP2000164788A (ja) 1998-11-20 2000-06-16 Anam Semiconductor Inc 半導体パッケ―ジ用リ―ドフレ―ムとこれを用いた半導体パッケ―ジ及びその製造方法
DE19914815A1 (de) * 1999-03-31 2000-10-05 Abb Research Ltd Halbleitermodul
US6093960A (en) * 1999-06-11 2000-07-25 Advanced Semiconductor Engineering, Inc. Semiconductor package having a heat spreader capable of preventing being soldered and enhancing adhesion and electrical performance
US7132161B2 (en) * 1999-06-14 2006-11-07 Energy Science Laboratories, Inc. Fiber adhesive material
US6188130B1 (en) 1999-06-14 2001-02-13 Advanced Technology Interconnect Incorporated Exposed heat spreader with seal ring
US6913075B1 (en) * 1999-06-14 2005-07-05 Energy Science Laboratories, Inc. Dendritic fiber material
US20040009353A1 (en) * 1999-06-14 2004-01-15 Knowles Timothy R. PCM/aligned fiber composite thermal interface
KR20010037247A (ko) 1999-10-15 2001-05-07 마이클 디. 오브라이언 반도체패키지
KR100403142B1 (ko) 1999-10-15 2003-10-30 앰코 테크놀로지 코리아 주식회사 반도체패키지
KR100379089B1 (ko) 1999-10-15 2003-04-08 앰코 테크놀로지 코리아 주식회사 리드프레임 및 이를 이용한 반도체패키지
US6580159B1 (en) 1999-11-05 2003-06-17 Amkor Technology, Inc. Integrated circuit device packages and substrates for making the packages
US6847103B1 (en) 1999-11-09 2005-01-25 Amkor Technology, Inc. Semiconductor package with exposed die pad and body-locking leadframe
US6476478B1 (en) 1999-11-12 2002-11-05 Amkor Technology, Inc. Cavity semiconductor package with exposed leads and die pad
KR100421774B1 (ko) * 1999-12-16 2004-03-10 앰코 테크놀로지 코리아 주식회사 반도체패키지 및 그 제조 방법
KR100559664B1 (ko) 2000-03-25 2006-03-10 앰코 테크놀로지 코리아 주식회사 반도체패키지
KR100583494B1 (ko) 2000-03-25 2006-05-24 앰코 테크놀로지 코리아 주식회사 반도체패키지
US7042068B2 (en) 2000-04-27 2006-05-09 Amkor Technology, Inc. Leadframe and semiconductor package made using the leadframe
JP2002151633A (ja) * 2000-11-08 2002-05-24 Citizen Watch Co Ltd 樹脂封止型半導体装置
KR20020058209A (ko) 2000-12-29 2002-07-12 마이클 디. 오브라이언 반도체패키지
KR100394030B1 (ko) * 2001-01-15 2003-08-06 앰코 테크놀로지 코리아 주식회사 적층형 반도체 패키지
KR100731007B1 (ko) * 2001-01-15 2007-06-22 앰코 테크놀로지 코리아 주식회사 적층형 반도체 패키지
US6605865B2 (en) 2001-03-19 2003-08-12 Amkor Technology, Inc. Semiconductor package with optimized leadframe bonding strength
US6545345B1 (en) 2001-03-20 2003-04-08 Amkor Technology, Inc. Mounting for a package containing a chip
US6967395B1 (en) 2001-03-20 2005-11-22 Amkor Technology, Inc. Mounting for a package containing a chip
KR100393448B1 (ko) 2001-03-27 2003-08-02 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 그 제조 방법
KR100369393B1 (ko) * 2001-03-27 2003-02-05 앰코 테크놀로지 코리아 주식회사 리드프레임 및 이를 이용한 반도체패키지와 그 제조 방법
US7045883B1 (en) 2001-04-04 2006-05-16 Amkor Technology, Inc. Thermally enhanced chip scale lead on chip semiconductor package and method of making same
US7064009B1 (en) 2001-04-04 2006-06-20 Amkor Technology, Inc. Thermally enhanced chip scale lead on chip semiconductor package and method of making same
US6756658B1 (en) 2001-04-06 2004-06-29 Amkor Technology, Inc. Making two lead surface mounting high power microleadframe semiconductor packages
DE10117889A1 (de) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
US6870866B2 (en) * 2001-06-05 2005-03-22 Axcel Photonics, Inc. Powerpack laser diode assemblies
TW498516B (en) * 2001-08-08 2002-08-11 Siliconware Precision Industries Co Ltd Manufacturing method for semiconductor package with heat sink
US6900527B1 (en) 2001-09-19 2005-05-31 Amkor Technology, Inc. Lead-frame method and assembly for interconnecting circuits within a circuit module
US7485952B1 (en) 2001-09-19 2009-02-03 Amkor Technology, Inc. Drop resistant bumpers for fully molded memory cards
US6611047B2 (en) 2001-10-12 2003-08-26 Amkor Technology, Inc. Semiconductor package with singulation crease
US6630726B1 (en) 2001-11-07 2003-10-07 Amkor Technology, Inc. Power semiconductor package with strap
US7143778B2 (en) * 2001-12-04 2006-12-05 Arch Chemicals, Inc. Chemical feeder
US20030112710A1 (en) * 2001-12-18 2003-06-19 Eidson John C. Reducing thermal drift in electronic components
US6798046B1 (en) 2002-01-22 2004-09-28 Amkor Technology, Inc. Semiconductor package including ring structure connected to leads with vertically downset inner ends
US7473995B2 (en) * 2002-03-25 2009-01-06 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
US7846778B2 (en) * 2002-02-08 2010-12-07 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
US6885086B1 (en) 2002-03-05 2005-04-26 Amkor Technology, Inc. Reduced copper lead frame for saw-singulated chip package
US20030178719A1 (en) * 2002-03-22 2003-09-25 Combs Edward G. Enhanced thermal dissipation integrated circuit package and method of manufacturing enhanced thermal dissipation integrated circuit package
US6608366B1 (en) 2002-04-15 2003-08-19 Harry J. Fogelson Lead frame with plated end leads
US6627977B1 (en) 2002-05-09 2003-09-30 Amkor Technology, Inc. Semiconductor package including isolated ring structure
DE10225602A1 (de) 2002-06-07 2004-01-08 Heraeus Sensor-Nite Gmbh Halbleiterbauelement mit integrierter Schaltung, Kühlkörper und Temperatursensor
US6841414B1 (en) 2002-06-19 2005-01-11 Amkor Technology, Inc. Saw and etch singulation method for a chip package
US6867071B1 (en) 2002-07-12 2005-03-15 Amkor Technology, Inc. Leadframe including corner leads and semiconductor package using same
JP2004104074A (ja) * 2002-07-17 2004-04-02 Sumitomo Electric Ind Ltd 半導体装置用部材
US7732914B1 (en) 2002-09-03 2010-06-08 Mclellan Neil Cavity-type integrated circuit package
US6818973B1 (en) 2002-09-09 2004-11-16 Amkor Technology, Inc. Exposed lead QFP package fabricated through the use of a partial saw process
US6919620B1 (en) 2002-09-17 2005-07-19 Amkor Technology, Inc. Compact flash memory card with clamshell leadframe
CN100380636C (zh) * 2002-09-30 2008-04-09 先进互连技术有限公司 用于整体成型组件的热增强封装及其制造方法
US6905914B1 (en) 2002-11-08 2005-06-14 Amkor Technology, Inc. Wafer level package and fabrication method
US7190062B1 (en) 2004-06-15 2007-03-13 Amkor Technology, Inc. Embedded leadframe semiconductor package
US7361533B1 (en) 2002-11-08 2008-04-22 Amkor Technology, Inc. Stacked embedded leadframe
US7723210B2 (en) 2002-11-08 2010-05-25 Amkor Technology, Inc. Direct-write wafer level chip scale package
SG111092A1 (en) 2002-11-15 2005-05-30 St Microelectronics Pte Ltd Semiconductor device package and method of manufacture
US6798047B1 (en) 2002-12-26 2004-09-28 Amkor Technology, Inc. Pre-molded leadframe
TWI253730B (en) 2003-01-10 2006-04-21 Siliconware Precision Industries Co Ltd Semiconductor package with heat dissipating structure
US6847099B1 (en) 2003-02-05 2005-01-25 Amkor Technology Inc. Offset etched corner leads for semiconductor package
US6750545B1 (en) 2003-02-28 2004-06-15 Amkor Technology, Inc. Semiconductor package capable of die stacking
US6927483B1 (en) 2003-03-07 2005-08-09 Amkor Technology, Inc. Semiconductor package exhibiting efficient lead placement
US7001799B1 (en) 2003-03-13 2006-02-21 Amkor Technology, Inc. Method of making a leadframe for semiconductor devices
US6794740B1 (en) 2003-03-13 2004-09-21 Amkor Technology, Inc. Leadframe package for semiconductor devices
JP4014528B2 (ja) * 2003-03-28 2007-11-28 日本碍子株式会社 ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール
CN1799107A (zh) * 2003-04-02 2006-07-05 霍尼韦尔国际公司 热互连和界面系统,其制备方法和应用
US7095103B1 (en) 2003-05-01 2006-08-22 Amkor Technology, Inc. Leadframe based memory card
US6879034B1 (en) 2003-05-01 2005-04-12 Amkor Technology, Inc. Semiconductor package including low temperature co-fired ceramic substrate
US6833289B2 (en) * 2003-05-12 2004-12-21 Intel Corporation Fluxless die-to-heat spreader bonding using thermal interface material
WO2004101864A1 (ja) * 2003-05-16 2004-11-25 Hideo Yoshida 陽極酸化法および酸化チタン皮膜の製造方法並びに触媒の担持方法
US7008825B1 (en) 2003-05-27 2006-03-07 Amkor Technology, Inc. Leadframe strip having enhanced testability
US7256491B2 (en) * 2003-06-06 2007-08-14 Honeywell International Inc. Thermal interconnect systems methods of production and uses thereof
US6897550B1 (en) 2003-06-11 2005-05-24 Amkor Technology, Inc. Fully-molded leadframe stand-off feature
US7033517B1 (en) 2003-09-15 2006-04-25 Asat Ltd. Method of fabricating a leadless plastic chip carrier
US7245007B1 (en) 2003-09-18 2007-07-17 Amkor Technology, Inc. Exposed lead interposer leadframe package
US7138707B1 (en) 2003-10-21 2006-11-21 Amkor Technology, Inc. Semiconductor package including leads and conductive posts for providing increased functionality
US7144517B1 (en) 2003-11-07 2006-12-05 Amkor Technology, Inc. Manufacturing method for leadframe and for semiconductor package using the leadframe
US7211879B1 (en) 2003-11-12 2007-05-01 Amkor Technology, Inc. Semiconductor package with chamfered corners and method of manufacturing the same
US7057268B1 (en) 2004-01-27 2006-06-06 Amkor Technology, Inc. Cavity case with clip/plug for use on multi-media card
US7091594B1 (en) 2004-01-28 2006-08-15 Amkor Technology, Inc. Leadframe type semiconductor package having reduced inductance and its manufacturing method
US20050280987A1 (en) * 2004-06-07 2005-12-22 Kwitek Benjamin J Phase change materials as a heat sink for computers
US7803307B2 (en) * 2004-06-07 2010-09-28 Interplex Qlp, Inc. Ultra high-temperature plastic package and method of manufacture
US20050275089A1 (en) * 2004-06-09 2005-12-15 Joshi Rajeev D Package and method for packaging an integrated circuit die
US7411289B1 (en) 2004-06-14 2008-08-12 Asat Ltd. Integrated circuit package with partially exposed contact pads and process for fabricating the same
US7091581B1 (en) 2004-06-14 2006-08-15 Asat Limited Integrated circuit package and process for fabricating the same
US7202554B1 (en) 2004-08-19 2007-04-10 Amkor Technology, Inc. Semiconductor package and its manufacturing method
JP2006100770A (ja) * 2004-09-01 2006-04-13 Toyota Industries Corp 回路基板のベース板の製造方法及び回路基板のベース板並びにベース板を用いた回路基板
ATE511213T1 (de) * 2004-09-03 2011-06-15 Cambridge Semiconductor Ltd Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
US20060065387A1 (en) * 2004-09-28 2006-03-30 General Electric Company Electronic assemblies and methods of making the same
US7595225B1 (en) 2004-10-05 2009-09-29 Chun Ho Fan Leadless plastic chip carrier with contact standoff
US20060083927A1 (en) * 2004-10-15 2006-04-20 Zyvex Corporation Thermal interface incorporating nanotubes
US7217991B1 (en) 2004-10-22 2007-05-15 Amkor Technology, Inc. Fan-in leadframe semiconductor package
US7473889B2 (en) * 2004-12-16 2009-01-06 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Optical integrated circuit package
US7358119B2 (en) * 2005-01-12 2008-04-15 Asat Ltd. Thin array plastic package without die attach pad and process for fabricating the same
US8395251B2 (en) * 2005-05-12 2013-03-12 Stats Chippac Ltd. Integrated circuit package to package stacking system
US7348663B1 (en) 2005-07-15 2008-03-25 Asat Ltd. Integrated circuit package and method for fabricating same
JP4378334B2 (ja) * 2005-09-09 2009-12-02 日本碍子株式会社 ヒートスプレッダモジュール及びその製造方法
US20070065984A1 (en) * 2005-09-22 2007-03-22 Lau Daniel K Thermal enhanced package for block mold assembly
US7410830B1 (en) 2005-09-26 2008-08-12 Asat Ltd Leadless plastic chip carrier and method of fabricating same
US7507603B1 (en) 2005-12-02 2009-03-24 Amkor Technology, Inc. Etch singulated semiconductor package
US7572681B1 (en) 2005-12-08 2009-08-11 Amkor Technology, Inc. Embedded electronic component package
WO2007085022A2 (en) * 2006-01-20 2007-07-26 Akrion Technologies, Inc. System, apparatus and methods for processing substrates using acoustic energy
US8022512B2 (en) * 2006-02-28 2011-09-20 Unisem (Mauritus) Holdings Limited No lead package with heat spreader
US7902660B1 (en) 2006-05-24 2011-03-08 Amkor Technology, Inc. Substrate for semiconductor device and manufacturing method thereof
US7892882B2 (en) * 2006-06-09 2011-02-22 Freescale Semiconductor, Inc. Methods and apparatus for a semiconductor device package with improved thermal performance
US7968998B1 (en) 2006-06-21 2011-06-28 Amkor Technology, Inc. Side leaded, bottom exposed pad and bottom exposed lead fusion quad flat semiconductor package
US7687893B2 (en) 2006-12-27 2010-03-30 Amkor Technology, Inc. Semiconductor package having leadframe with exposed anchor pads
JP4926726B2 (ja) * 2007-01-15 2012-05-09 ローム株式会社 半導体装置
JP2008172172A (ja) * 2007-01-15 2008-07-24 Denso Corp 電子制御装置及びその製造方法
US7829990B1 (en) 2007-01-18 2010-11-09 Amkor Technology, Inc. Stackable semiconductor package including laminate interposer
US7982297B1 (en) 2007-03-06 2011-07-19 Amkor Technology, Inc. Stackable semiconductor package having partially exposed semiconductor die and method of fabricating the same
WO2008148029A1 (en) * 2007-05-25 2008-12-04 Molex Incorporated Heat sink for a heat generator and a power source
US8493748B2 (en) * 2007-06-27 2013-07-23 Stats Chippac Ltd. Packaging system with hollow package and method for the same
US7977774B2 (en) 2007-07-10 2011-07-12 Amkor Technology, Inc. Fusion quad flat semiconductor package
US7687899B1 (en) 2007-08-07 2010-03-30 Amkor Technology, Inc. Dual laminate package structure with embedded elements
US7777351B1 (en) 2007-10-01 2010-08-17 Amkor Technology, Inc. Thin stacked interposer package
US8089159B1 (en) 2007-10-03 2012-01-03 Amkor Technology, Inc. Semiconductor package with increased I/O density and method of making the same
US7847386B1 (en) 2007-11-05 2010-12-07 Amkor Technology, Inc. Reduced size stacked semiconductor package and method of making the same
JP4600701B2 (ja) * 2007-12-14 2010-12-15 株式会社デンソー 樹脂金属接合体及びその製造方法
US7956453B1 (en) 2008-01-16 2011-06-07 Amkor Technology, Inc. Semiconductor package with patterning layer and method of making same
US7723852B1 (en) 2008-01-21 2010-05-25 Amkor Technology, Inc. Stacked semiconductor package and method of making same
KR101448850B1 (ko) * 2008-02-04 2014-10-14 페어차일드코리아반도체 주식회사 반도체 패키지 및 그 제조방법들
JP4748173B2 (ja) * 2008-03-04 2011-08-17 株式会社デンソー 半導体モジュール及びその製造方法
US8067821B1 (en) 2008-04-10 2011-11-29 Amkor Technology, Inc. Flat semiconductor package with half package molding
US7768135B1 (en) 2008-04-17 2010-08-03 Amkor Technology, Inc. Semiconductor package with fast power-up cycle and method of making same
US7808084B1 (en) 2008-05-06 2010-10-05 Amkor Technology, Inc. Semiconductor package with half-etched locking features
US8125064B1 (en) 2008-07-28 2012-02-28 Amkor Technology, Inc. Increased I/O semiconductor package and method of making same
US8184453B1 (en) 2008-07-31 2012-05-22 Amkor Technology, Inc. Increased capacity semiconductor package
US7847392B1 (en) 2008-09-30 2010-12-07 Amkor Technology, Inc. Semiconductor device including leadframe with increased I/O
US7989933B1 (en) 2008-10-06 2011-08-02 Amkor Technology, Inc. Increased I/O leadframe and semiconductor device including same
US8008758B1 (en) 2008-10-27 2011-08-30 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe
US8089145B1 (en) 2008-11-17 2012-01-03 Amkor Technology, Inc. Semiconductor device including increased capacity leadframe
US8072050B1 (en) 2008-11-18 2011-12-06 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including passive device
US7875963B1 (en) 2008-11-21 2011-01-25 Amkor Technology, Inc. Semiconductor device including leadframe having power bars and increased I/O
US7982298B1 (en) 2008-12-03 2011-07-19 Amkor Technology, Inc. Package in package semiconductor device
US8487420B1 (en) 2008-12-08 2013-07-16 Amkor Technology, Inc. Package in package semiconductor device with film over wire
US8680656B1 (en) 2009-01-05 2014-03-25 Amkor Technology, Inc. Leadframe structure for concentrated photovoltaic receiver package
US20170117214A1 (en) 2009-01-05 2017-04-27 Amkor Technology, Inc. Semiconductor device with through-mold via
US8058715B1 (en) 2009-01-09 2011-11-15 Amkor Technology, Inc. Package in package device for RF transceiver module
US8018051B2 (en) * 2009-02-02 2011-09-13 Maxim Integrated Products, Inc. Thermally enhanced semiconductor package
US8026589B1 (en) 2009-02-23 2011-09-27 Amkor Technology, Inc. Reduced profile stackable semiconductor package
US7960818B1 (en) 2009-03-04 2011-06-14 Amkor Technology, Inc. Conformal shield on punch QFN semiconductor package
US8575742B1 (en) 2009-04-06 2013-11-05 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including power bars
US8796561B1 (en) 2009-10-05 2014-08-05 Amkor Technology, Inc. Fan out build up substrate stackable package and method
US8305761B2 (en) * 2009-11-17 2012-11-06 Apple Inc. Heat removal in compact computing systems
US8937381B1 (en) 2009-12-03 2015-01-20 Amkor Technology, Inc. Thin stackable package and method
US9691734B1 (en) 2009-12-07 2017-06-27 Amkor Technology, Inc. Method of forming a plurality of electronic component packages
TWI404175B (zh) * 2009-12-25 2013-08-01 矽品精密工業股份有限公司 具電性連接結構之半導體封裝件及其製法
US8324511B1 (en) 2010-04-06 2012-12-04 Amkor Technology, Inc. Through via nub reveal method and structure
US8294276B1 (en) 2010-05-27 2012-10-23 Amkor Technology, Inc. Semiconductor device and fabricating method thereof
JP5480722B2 (ja) * 2010-05-28 2014-04-23 新光電気工業株式会社 放熱用部品及びそれを備えた半導体パッケージ
US8440554B1 (en) 2010-08-02 2013-05-14 Amkor Technology, Inc. Through via connected backside embedded circuit features structure and method
US8487445B1 (en) 2010-10-05 2013-07-16 Amkor Technology, Inc. Semiconductor device having through electrodes protruding from dielectric layer
US8791501B1 (en) 2010-12-03 2014-07-29 Amkor Technology, Inc. Integrated passive device structure and method
US8390130B1 (en) 2011-01-06 2013-03-05 Amkor Technology, Inc. Through via recessed reveal structure and method
US8648450B1 (en) 2011-01-27 2014-02-11 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands
TWI557183B (zh) 2015-12-16 2016-11-11 財團法人工業技術研究院 矽氧烷組成物、以及包含其之光電裝置
JP5893838B2 (ja) * 2011-03-18 2016-03-23 新光電気工業株式会社 放熱部品及びそれを有する半導体パッケージ、放熱部品の製造方法
US8835762B2 (en) 2011-06-10 2014-09-16 Aerojet Rocketdyne of DE, Inc Apparatus for electrical isolation of metallic hardware
WO2013000119A1 (en) * 2011-06-28 2013-01-03 Telefonaktiebolaget L M Ericsson (Publ) Electronic device with heat-dissipating structure
US20160277017A1 (en) * 2011-09-13 2016-09-22 Fsp Technology Inc. Snubber circuit
US8552548B1 (en) 2011-11-29 2013-10-08 Amkor Technology, Inc. Conductive pad on protruding through electrode semiconductor device
KR20130089473A (ko) * 2012-02-02 2013-08-12 삼성전자주식회사 반도체 패키지
US9704725B1 (en) 2012-03-06 2017-07-11 Amkor Technology, Inc. Semiconductor device with leadframe configured to facilitate reduced burr formation
US9048298B1 (en) 2012-03-29 2015-06-02 Amkor Technology, Inc. Backside warpage control structure and fabrication method
US9129943B1 (en) 2012-03-29 2015-09-08 Amkor Technology, Inc. Embedded component package and fabrication method
KR20140070141A (ko) * 2012-11-30 2014-06-10 삼성전자주식회사 열 방출 부를 갖는 반도체 패키지
KR101486790B1 (ko) 2013-05-02 2015-01-28 앰코 테크놀로지 코리아 주식회사 강성보강부를 갖는 마이크로 리드프레임
KR101563911B1 (ko) 2013-10-24 2015-10-28 앰코 테크놀로지 코리아 주식회사 반도체 패키지
US9423188B2 (en) * 2013-12-23 2016-08-23 Palo Alto Research Center Incorporated Molded plastic objects having an integrated heat spreader and methods of manufacture of same
JP6314574B2 (ja) * 2014-03-20 2018-04-25 三菱電機株式会社 電子部品の製造方法
US9673122B2 (en) 2014-05-02 2017-06-06 Amkor Technology, Inc. Micro lead frame structure having reinforcing portions and method
US9443785B2 (en) * 2014-12-19 2016-09-13 Advanced Semiconductor Engineering, Inc. Semiconductor package
JP6635806B2 (ja) * 2016-01-26 2020-01-29 エイブリック株式会社 半導体装置
US10548228B2 (en) 2016-03-03 2020-01-28 International Business Machines Corporation Thermal interface adhesion for transfer molded electronic components
JP2017188513A (ja) * 2016-04-01 2017-10-12 株式会社東芝 半導体装置
US10312186B2 (en) * 2017-10-31 2019-06-04 Amkor Technology Inc. Heat sink attached to an electronic component in a packaged device
US10418408B1 (en) 2018-06-22 2019-09-17 Omnivision Technologies, Inc. Curved image sensor using thermal plastic substrate material
CN113784782A (zh) 2019-05-03 2021-12-10 创新水护理有限责任公司 用于水处理的装置和系统
KR20210017271A (ko) 2019-08-07 2021-02-17 삼성전기주식회사 반도체 패키지
US20220208661A1 (en) * 2020-12-31 2022-06-30 Texas Instruments Incorporated Qfn/qfp package with insulated top-side thermal pad
US20220418079A1 (en) * 2021-06-25 2022-12-29 Amulaire Thermal Technology, Inc. Insulating metal substrate structure
GB2626780A (en) * 2023-02-03 2024-08-07 Rolls Royce Deutschland Ltd & Co Kg Electrical device and method of manufacturing an electrical device

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3399332A (en) * 1965-12-29 1968-08-27 Texas Instruments Inc Heat-dissipating support for semiconductor device
BE754994A (fr) * 1969-10-08 1971-02-01 Vaw Ver Aluminium Werke Ag Procede d'anodisation coloree des alliages
US3784440A (en) * 1969-12-31 1974-01-08 Macdermid Inc Aluminum-clad plastic substrate laminates
US3930114A (en) * 1975-03-17 1975-12-30 Nat Semiconductor Corp Integrated circuit package utilizing novel heat sink structure
DE2650989C2 (de) * 1976-11-08 1985-01-24 Henkel KGaA, 4000 Düsseldorf Verfahren zur Behandlung von Aluminiumoberflächen durch Oxidation mit einer nachfolgenden Verdichtung
US4092697A (en) * 1976-12-06 1978-05-30 International Business Machines Corporation Heat transfer mechanism for integrated circuit package
JPS57139949A (en) * 1981-02-23 1982-08-30 Toshiba Corp Resin sealing type semiconductor device
US4451973A (en) * 1981-04-28 1984-06-05 Matsushita Electronics Corporation Method for manufacturing a plastic encapsulated semiconductor device and a lead frame therefor
US4461924A (en) * 1982-01-21 1984-07-24 Olin Corporation Semiconductor casing
US5001546A (en) * 1983-07-27 1991-03-19 Olin Corporation Clad metal lead frame substrates
US4569692A (en) * 1983-10-06 1986-02-11 Olin Corporation Low thermal expansivity and high thermal conductivity substrate
JPS60137041A (ja) * 1983-12-26 1985-07-20 Matsushita Electronics Corp 樹脂封止形半導体装置
US4767674A (en) * 1984-01-27 1988-08-30 Dainichi-Nippon Cables, Ltd. Metal cored board and method for manufacturing same
JPH0612796B2 (ja) * 1984-06-04 1994-02-16 株式会社日立製作所 半導体装置
JPS6139555A (ja) * 1984-07-31 1986-02-25 Toshiba Corp 放熱板付樹脂封止形半導体装置
EP0183016B1 (en) * 1984-10-03 1989-09-20 Sumitomo Electric Industries Limited Material for a semiconductor device and process for its manufacture
US4766095A (en) * 1985-01-04 1988-08-23 Oki Electric Industry Co., Ltd. Method of manufacturing eprom device
JPS61201798A (ja) * 1985-03-01 1986-09-06 Citizen Watch Co Ltd 腕時計用外装部品
US4840654A (en) * 1985-03-04 1989-06-20 Olin Corporation Method for making multi-layer and pin grid arrays
US4713150A (en) * 1985-11-08 1987-12-15 Parker Pen Ltd. Process for preparing a part for color anodization
US4793967A (en) * 1986-03-12 1988-12-27 Olin Corporation Cermet substrate with spinel adhesion component
US4811166A (en) * 1986-07-02 1989-03-07 Texas Instruments Incorporated Heat dissipating member for mounting a semiconductor device and electrical circuit unit incorporating the member
US4882212A (en) * 1986-10-30 1989-11-21 Olin Corporation Electronic packaging of components incorporating a ceramic-glass-metal composite
US4888449A (en) * 1988-01-04 1989-12-19 Olin Corporation Semiconductor package
US5013871A (en) * 1988-02-10 1991-05-07 Olin Corporation Kit for the assembly of a metal electronic package
US5035940A (en) * 1988-09-19 1991-07-30 Rexham Corporation Aluminum-fluoropolymer laminate
US4939316A (en) * 1988-10-05 1990-07-03 Olin Corporation Aluminum alloy semiconductor packages
US5055967A (en) * 1988-10-26 1991-10-08 Texas Instruments Incorporated Substrate for an electrical circuit system and a circuit system using that substrate
CA1316303C (en) * 1988-12-23 1993-04-20 Thijs Eerkes Composite structure
JPH02201948A (ja) * 1989-01-30 1990-08-10 Toshiba Corp 半導体装置パッケージ
US4994314A (en) * 1989-02-03 1991-02-19 Alcan International Limited Color change devices incorporating thin anodic films
US5043535A (en) * 1989-03-10 1991-08-27 Olin Corporation Hermetic cerglass and cermet electronic packages
US5015083A (en) * 1989-05-19 1991-05-14 Rockwell International Corporation Aircraft vision augmentation system with adjustable external mirror and cockpit mirror
US5015803A (en) * 1989-05-31 1991-05-14 Olin Corporation Thermal performance package for integrated circuit chip
US5098796A (en) * 1989-10-13 1992-03-24 Olin Corporation Chromium-zinc anti-tarnish coating on copper foil
US5073521A (en) * 1989-11-15 1991-12-17 Olin Corporation Method for housing a tape-bonded electronic device and the package employed
US5098864A (en) * 1989-11-29 1992-03-24 Olin Corporation Process for manufacturing a metal pin grid array package
US5103292A (en) * 1989-11-29 1992-04-07 Olin Corporation Metal pin grid array package
JP2640993B2 (ja) * 1990-06-11 1997-08-13 スカイアルミニウム株式会社 超塑性成形用アルミニウム合金圧延板
US5096508A (en) * 1990-07-27 1992-03-17 Olin Corporation Surface modified copper alloys
US5320689A (en) * 1990-07-27 1994-06-14 Olin Corporation Surface modified copper alloys
US5066368A (en) * 1990-08-17 1991-11-19 Olin Corporation Process for producing black integrally colored anodized aluminum components
US5122858A (en) * 1990-09-10 1992-06-16 Olin Corporation Lead frame having polymer coated surface portions
US5188985A (en) * 1991-03-29 1993-02-23 Aegis, Inc. Surface mount device with high thermal conductivity
US5272375A (en) * 1991-12-26 1993-12-21 E. I. Du Pont De Nemours And Company Electronic assembly with optimum heat dissipation
US5300158A (en) * 1992-05-26 1994-04-05 Olin Corporation Protective coating having adhesion improving characteristics
US5367196A (en) * 1992-09-17 1994-11-22 Olin Corporation Molded plastic semiconductor package including an aluminum alloy heat spreader

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660471B (zh) * 2017-10-06 2019-05-21 財團法人工業技術研究院 晶片封裝
US10622274B2 (en) 2017-10-06 2020-04-14 Industrial Technology Research Institute Chip package

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WO1996002942A1 (en) 1996-02-01
KR970705179A (ko) 1997-09-06
EP0771473A1 (en) 1997-05-07
AU2914395A (en) 1996-02-16
JPH10504136A (ja) 1998-04-14
EP0771473A4 (en) 1998-07-15
US5608267A (en) 1997-03-04

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