TW202534408A - Display panel - Google Patents
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Abstract
Description
本發明是有關於一種顯示技術,且特別是有關於一種顯示面板。The present invention relates to a display technology, and in particular to a display panel.
在現行的一種顯示面板中,多個畫素結構的共電極層彼此連接,並且與各個畫素電極形成儲存電容。隨著顯示面板的尺寸與解析度不斷地提升,共電極層與其他導電層的電容耦合效應會讓共電極層上的電訊號傳遞發生延遲,導致共電極層的電壓位準會隨著遠離電訊號源而產生偏差。此電壓位準的偏差會讓顯示畫素的儲存電容不足而影響顯示品質。In one type of current display panel, the common electrode layers of multiple pixel structures are interconnected, forming storage capacitors with each pixel electrode. As display panel size and resolution continue to increase, capacitive coupling between the common electrode layer and other conductive layers causes delays in signal transmission on the common electrode layer, causing the voltage level of the common electrode layer to deviate as it moves away from the signal source. This voltage level deviation can lead to insufficient storage capacitance in the display pixels, compromising display quality.
本發明提供一種顯示面板,其操作電性較佳。The present invention provides a display panel with better operating electrical performance.
本發明的顯示面板,包括第一基板、第二基板、液晶層、多條資料線、多條掃描線、多個畫素結構、第一共電極層、多個橋接圖案、多個第一間隙物與第二共電極層。第一基板與第二基板沿著堆疊方向設置。液晶層設置在第一基板與第二基板之間。多條資料線與多條掃描線設置在第一基板上,且彼此相交。多個畫素結構設置在第一基板上,且各自具有主動元件與畫素電極。主動元件電性連接畫素電極、多條資料線中的一者與多條掃描線中的一者。第一共電極層與多個橋接圖案設置在第一基板上,且彼此電性連接。第一共電極層重疊於多個畫素結構。多個第一間隙物設置在第二基板上,且沿著堆疊方向分別抵接在這些橋接圖案上。第二共電極層設置在第二基板上,且覆蓋多個第一間隙物以電性連接這些橋接圖案。The display panel of the present invention includes a first substrate, a second substrate, a liquid crystal layer, multiple data lines, multiple scan lines, multiple pixel structures, a first common electrode layer, multiple bridge patterns, multiple first spacers, and a second common electrode layer. The first substrate and the second substrate are arranged along a stacking direction. The liquid crystal layer is arranged between the first substrate and the second substrate. Multiple data lines and multiple scan lines are arranged on the first substrate and intersect with each other. Multiple pixel structures are arranged on the first substrate and each has an active element and a pixel electrode. The active element is electrically connected to the pixel electrode, one of the multiple data lines, and one of the multiple scan lines. The first common electrode layer and the multiple bridge patterns are arranged on the first substrate and are electrically connected to each other. The first common electrode layer overlaps the multiple pixel structures. A plurality of first spacers are disposed on the second substrate and respectively abut the bridge patterns along the stacking direction. A second common electrode layer is disposed on the second substrate and covers the plurality of first spacers to electrically connect the bridge patterns.
在本發明的一實施例中,上述的顯示面板的第一共電極層具有多個開口,且這些開口沿著堆疊方向分別重疊於多個畫素結構的多個畫素電極。In one embodiment of the present invention, the first common electrode layer of the display panel has a plurality of openings, and these openings overlap with a plurality of pixel electrodes of a plurality of pixel structures along the stacking direction.
在本發明的一實施例中,上述的顯示面板的多個橋接圖案與多個畫素結構的多個畫素電極為同一膜層。In one embodiment of the present invention, the multiple bridge patterns of the display panel and the multiple pixel electrodes of the multiple pixel structures are formed in the same film layer.
在本發明的一實施例中,上述的顯示面板的第一共電極層重疊於多個畫素結構的多個畫素電極。In one embodiment of the present invention, the first common electrode layer of the display panel overlaps with a plurality of pixel electrodes of a plurality of pixel structures.
在本發明的一實施例中,上述的顯示面板的各個畫素結構還具有第一轉接圖案,設置在畫素電極與主動元件之間,且畫素電極經由第一轉接圖案電性連接主動元件。各個橋接圖案與第一共電極層之間設有第二轉接圖案。各個橋接圖案經由第二轉接圖案電性連接第一共電極層,且第一轉接圖案與第二轉接圖案為同一膜層。In one embodiment of the present invention, each pixel structure of the display panel further comprises a first transfer pattern disposed between the pixel electrode and the active device, with the pixel electrode electrically connected to the active device via the first transfer pattern. A second transfer pattern is disposed between each bridge pattern and the first common electrode layer. Each bridge pattern is electrically connected to the first common electrode layer via the second transfer pattern, and the first and second transfer patterns are formed from the same film layer.
在本發明的一實施例中,上述的顯示面板的各個畫素結構還具有電容電極,電性連接主動元件與第一轉接圖案。電容電極與第一共電極層電容耦合並形成儲存電容。In one embodiment of the present invention, each pixel structure of the display panel further comprises a capacitor electrode electrically connected to the active element and the first transfer pattern. The capacitor electrode is capacitively coupled to the first common electrode layer to form a storage capacitor.
在本發明的一實施例中,上述的顯示面板的各個畫素結構還具有反射層。反射層具有重疊於畫素電極的開口,且反射層定義出各個畫素結構的反射區。反射層的開口定義出各個畫素結構的透光區,且開口在第一基板的基板表面上的正投影位在畫素電極在基板表面上的正投影內。In one embodiment of the present invention, each pixel structure of the display panel further comprises a reflective layer. The reflective layer has an opening that overlaps the pixel electrode and defines a reflective region for each pixel structure. The opening in the reflective layer defines a light-transmitting region for each pixel structure, and the orthographic projection of the opening on the substrate surface of the first substrate lies within the orthographic projection of the pixel electrode on the substrate surface.
在本發明的一實施例中,上述的顯示面板的多個橋接圖案與各個畫素結構的反射層為同一膜層。In one embodiment of the present invention, the multiple bridge patterns of the display panel and the reflective layer of each pixel structure are formed from the same film layer.
在本發明的一實施例中,上述的顯示面板的各個橋接圖案與第一共電極層之間設有轉接圖案。各個橋接圖案經由轉接圖案電性連接第一共電極層,且轉接圖案與畫素電極為同一膜層。In one embodiment of the present invention, a transfer pattern is disposed between each bridge pattern and the first common electrode layer of the display panel. Each bridge pattern is electrically connected to the first common electrode layer via the transfer pattern, and the transfer pattern and the pixel electrode are formed in the same film layer.
在本發明的一實施例中,上述的顯示面板的第一共電極層與畫素電極電容耦合並形成儲存電容。In one embodiment of the present invention, the first common electrode layer of the display panel is capacitively coupled to the pixel electrode to form a storage capacitor.
在本發明的一實施例中,上述的顯示面板還包括多個第二間隙物,設置在第二基板上,且重疊於多個畫素結構。多個第一間隙物與多個第二間隙物為同一膜層。In one embodiment of the present invention, the display panel further includes a plurality of second spacers disposed on the second substrate and overlapping the plurality of pixel structures. The plurality of first spacers and the plurality of second spacers are formed from the same film layer.
在本發明的一實施例中,上述的顯示面板還包括多個第二間隙物,設置在第二基板上,且位於第二共電極層背對第二基板的一側。In one embodiment of the present invention, the display panel further includes a plurality of second spacers disposed on the second substrate and located on a side of the second common electrode layer facing away from the second substrate.
基於上述,在本發明的一實施例的顯示面板中,第一基板上設有電性連接第一共電極層的多個橋接圖案,而第二基板上設有第二共電極層以及適於分別抵接多個橋接圖案的多個第一間隙物。藉由第二共電極層覆蓋這些第一間隙物以電性接觸這些橋接圖案並實現第一共電極層與第二共電極層間的電性連接關係,可有效降低與多個畫素結構重疊的第一共電極層在不同區域的電壓準位差異,進而提升第一共電極層的電壓準位的分佈均勻性。Based on the above, in a display panel according to one embodiment of the present invention, a first substrate is provided with a plurality of bridge patterns electrically connected to a first common electrode layer, while a second substrate is provided with a second common electrode layer and a plurality of first spacers adapted to abut the plurality of bridge patterns. The second common electrode layer covers the first spacers, electrically contacting the bridge patterns and establishing electrical connection between the first and second common electrode layers. This effectively reduces voltage level variations between different regions of the first common electrode layer, which overlaps with multiple pixel structures, thereby improving the voltage level distribution uniformity of the first common electrode layer.
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本發明。The aforementioned technical contents, features, and functions of the present invention are clearly presented in the following detailed description of a preferred embodiment with reference to the accompanying drawings. Directional terms such as up, down, left, right, front, and back, etc., mentioned in the following embodiments are merely references to the directions in the accompanying drawings. Therefore, the directional terms used are for illustrative purposes only and are not intended to limit the present invention.
圖1是依照本發明的第一實施例的顯示面板的正視示意圖。圖2及圖3是圖1的顯示面板的剖視示意圖。圖4是圖3的顯示面板的另一種變形實施態樣的剖視示意圖。圖2及圖3分別對應於圖1的剖線A-A’與剖線B-B’。為清楚呈現起見,圖1僅繪示出圖2及圖3的部分膜層。Figure 1 is a schematic front view of a display panel according to a first embodiment of the present invention. Figures 2 and 3 are schematic cross-sectional views of the display panel of Figure 1. Figure 4 is a schematic cross-sectional view of another modified embodiment of the display panel of Figure 3. Figures 2 and 3 correspond to sections A-A' and B-B' in Figure 1, respectively. For clarity, Figure 1 only illustrates portions of the film layers of Figures 2 and 3.
請參照圖1至圖3,顯示面板10包括第一基板101、第二基板102與液晶層LCL。第一基板101與第二基板102沿著堆疊方向(例如方向D3)重疊設置。液晶層LCL設置在第一基板101與第二基板102之間。以下若未特別提及,則兩構件的重疊關係都是以前述的堆疊方向來界定,便不再贅述其重疊方向。Referring to Figures 1 to 3 , the display panel 10 includes a first substrate 101, a second substrate 102, and a liquid crystal layer (LCL). The first and second substrates 101, 102 are stacked along a stacking direction (e.g., direction D3). The liquid crystal layer (LCL) is disposed between the first and second substrates 101, 102. Unless otherwise specified, the stacking relationship between the two components is defined by the aforementioned stacking direction, and the stacking direction will not be further discussed.
應可理解的是,雖然圖1的顯示面板10僅繪示出一個畫素結構PX、一條資料線DL與一條掃描線SL,顯示面板10實質上是設有多個畫素結構PX、多條資料線DL與多條掃描線SL。舉例來說,多條資料線DL可沿著方向D1排列在第一基板101上並且在方向D2上延伸。多條掃描線SL可沿著方向D2排列在第一基板101上並且在方向D1上延伸。更具體地說,這些資料線DL相交於這些掃描線SL並且定義出顯示面板10的多個畫素區。多個畫素結構PX分別對應這些畫素區並設置在第一基板101上,且各自電性連接一條掃描線SL與一條資料線DL。舉例來說,多個畫素結構PX可分別沿著方向D1與方向D2排成多列與多行,亦即這些畫素結構PX是陣列排列在第一基板101上。It should be understood that although the display panel 10 in FIG1 only illustrates one pixel structure PX, one data line DL, and one scan line SL, the display panel 10 actually includes multiple pixel structures PX, multiple data lines DL, and multiple scan lines SL. For example, multiple data lines DL may be arranged on the first substrate 101 along direction D1 and extend in direction D2. Multiple scan lines SL may be arranged on the first substrate 101 along direction D2 and extend in direction D1. More specifically, these data lines DL intersect at these scan lines SL and define multiple pixel regions of the display panel 10. Multiple pixel structures PX are disposed on the first substrate 101, corresponding to these pixel regions, and are each electrically connected to a scan line SL and a data line DL. For example, the plurality of pixel structures PX may be arranged in a plurality of rows and columns along the direction D1 and the direction D2, respectively. That is, the pixel structures PX are arranged in an array on the first substrate 101.
詳細地,這些畫素結構PX各自具有彼此電性連接的主動元件T與畫素電極PE。在本實施例中,形成主動元件T的方法可包括以下步驟:在第一基板101上依序形成閘極GE、閘絕緣層110、半導體圖案SC、源極SE和汲極DE。半導體圖案SC重疊閘極GE設置。源極SE和汲極DE重疊於半導體圖案SC,並且與半導體圖案SC的不同兩區電性接觸。在本實施例中,主動元件T的閘極GE可選擇性地設置於半導體圖案SC的下方,以形成底部閘極型薄膜電晶體(bottom-gate TFT),但不以此為限。在其他實施例中,主動元件的閘極也可選擇性地配置在半導體圖案的上方,以形成頂部閘極型薄膜電晶體(top-gate TFT)。進一步而言,主動元件T上可覆蓋有絕緣層120。在本實施例中,絕緣層120例如是鈍化層(passivation layer)。Specifically, each of these pixel structures PX includes an active element T and a pixel electrode PE that are electrically connected to each other. In this embodiment, the method for forming the active element T may include the following steps: sequentially forming a gate electrode GE, a gate insulation layer 110, a semiconductor pattern SC, a source electrode SE, and a drain electrode DE on a first substrate 101. The semiconductor pattern SC is disposed overlapping the gate electrode GE. The source electrode SE and the drain electrode DE overlap the semiconductor pattern SC and are electrically connected to two different regions of the semiconductor pattern SC. In this embodiment, the gate electrode GE of the active element T may be optionally disposed below the semiconductor pattern SC to form a bottom-gate thin-film transistor (TFT), but this is not limiting. In other embodiments, the gate of the active device can optionally be disposed above the semiconductor pattern to form a top-gate thin-film transistor (TFT). Furthermore, the active device T can be covered with an insulating layer 120. In this embodiment, the insulating layer 120 is, for example, a passivation layer.
需說明的是,閘極GE、源極SE、汲極DE、半導體圖案SC、閘絕緣層110與鈍化層(即絕緣層120)分別可由任何所屬技術領域的技術人員所周知的用於顯示面板的任一閘極、任一源極、任一汲極、任一半導體圖案、任一閘絕緣層與任一鈍化層來實現,且閘極GE、源極SE、汲極DE、半導體圖案SC、閘絕緣層110與鈍化層分別可經由任何所屬技術領域的技術人員所周知的任一方法來形成,故於此不加以贅述。It should be noted that the gate GE, source SE, drain DE, semiconductor pattern SC, gate insulating layer 110, and passivation layer (i.e., insulating layer 120) can be respectively implemented by any gate, any source, any drain, any semiconductor pattern, any gate insulating layer, and any passivation layer known to those skilled in the art for use in a display panel. Furthermore, the gate GE, source SE, drain DE, semiconductor pattern SC, gate insulating layer 110, and passivation layer can be respectively formed by any method known to those skilled in the art, and therefore will not be described in detail here.
在本實施例中,畫素電極PE設置在絕緣層120上,並且經由絕緣層120的接觸孔TH2與主動元件T的汲極DE電性連接。在本實施例中,畫素電極PE例如是光穿透式電極,而光穿透式電極的材料包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、或其它合適的氧化物、或者是上述至少兩者之堆疊層。更具體地說,本實施例的顯示面板10可以是光穿透式液晶顯示面板,但不以此為限。In this embodiment, the pixel electrode PE is disposed on the insulating layer 120 and is electrically connected to the drain electrode DE of the active device T via the contact hole TH2 in the insulating layer 120. In this embodiment, the pixel electrode PE is, for example, a light-transmitting electrode, and the material of the light-transmitting electrode includes a metal oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stack of at least two of the foregoing. More specifically, the display panel 10 of this embodiment can be a light-transmitting liquid crystal display panel, but is not limited thereto.
進一步地,顯示面板10還可包括彼此電性連接的第一共電極層CEL1與多個橋接圖案BP。第一共電極層CEL1設置在第一基板101與閘絕緣層110之間,且重疊於多個畫素結構PX。詳細地,第一共電極層CEL1具有多個開口CEL1op,且這些開口CEL1op分別重疊於多個畫素結構PX的多個畫素電極PE。特別注意的是,畫素電極PE除了重疊於第一共電極層CEL1的開口CEL1op外,還重疊於第一共電極層CEL1中定義開口CEL1op的周圍部分以形成畫素結構PX的儲存電容(storage capacitor)。在本實施例中,第一共電極層CEL1與閘極GE可為同一膜層,但不以此為限。Furthermore, the display panel 10 may also include a first common electrode layer CEL1 and a plurality of bridge patterns BP, which are electrically connected to each other. The first common electrode layer CEL1 is disposed between the first substrate 101 and the gate insulation layer 110 and overlaps the plurality of pixel structures PX. Specifically, the first common electrode layer CEL1 has a plurality of openings CEL1op, and these openings CEL1op overlap the plurality of pixel electrodes PE of the plurality of pixel structures PX. Of particular note is that the pixel electrode PE not only overlaps the opening CEL1op of the first common electrode layer CEL1, but also overlaps the portion surrounding the opening CEL1op in the first common electrode layer CEL1 to form the storage capacitor of the pixel structure PX. In this embodiment, the first common electrode layer CEL1 and the gate electrode GE can be the same film layer, but this is not limited to this.
橋接圖案BP在第一基板101的基板表面101s上的正投影位在第一共電極層CEL1在基板表面101s上的正投影內。亦即,橋接圖案BP完全重疊於第一共電極層CEL1。在本實施例中,橋接圖案BP設置在絕緣層120上,並且經由閘絕緣層110與絕緣層120的接觸孔TH1電性連接第一共電極層CEL1。舉例來說,橋接圖案BP與畫素電極PE可為同一膜層,以避免增加額外的製程工序。The orthographic projection of the bridge pattern BP on the substrate surface 101s of the first substrate 101 is located within the orthographic projection of the first common electrode layer CEL1 on the substrate surface 101s. In other words, the bridge pattern BP completely overlaps the first common electrode layer CEL1. In this embodiment, the bridge pattern BP is disposed on the insulating layer 120 and electrically connected to the first common electrode layer CEL1 via contact holes TH1 in the gate insulating layer 110 and the insulating layer 120. For example, the bridge pattern BP and the pixel electrode PE can be formed from the same film layer to avoid adding additional process steps.
另一方面,第二基板102上設有第二共電極層CEL2,且第二共電極層CEL2例如是光穿透式電極。舉例來說,當顯示面板10進行顯示操作時,第二共電極層CEL2與各個畫素結構PX的畫素電極PE之間所產生的電場適於驅使液晶層LCL的多個液晶分子(未繪示)轉動而形成對應所述電場方向與強度的排列狀態。藉由改變這些液晶分子的排列狀態,使通過液晶層LCL的光線的偏振狀態發生改變而形成對應所述排列狀態的出光亮度。在本實施例中,液晶層LCL例如是以扭轉向列(twisted nematic,TN)模式或電控雙折射(electrically controlled birefringence,ECB)模式進行驅動。On the other hand, a second common electrode layer CEL2 is disposed on the second substrate 102. This second common electrode layer CEL2 is, for example, a light-transmitting electrode. For example, when the display panel 10 is operating, the electric field generated between the second common electrode layer CEL2 and the pixel electrodes PE of each pixel structure PX is suitable for driving the multiple liquid crystal molecules (not shown) in the liquid crystal layer LCL to rotate, forming an arrangement corresponding to the direction and intensity of the electric field. By changing the arrangement of these liquid crystal molecules, the polarization state of light passing through the liquid crystal layer LCL is altered, resulting in a light output brightness corresponding to the arrangement. In this embodiment, the liquid crystal layer (LCL) is driven in a twisted nematic (TN) mode or an electrically controlled birefringence (ECB) mode, for example.
為了在第一基板101與第二基板102之間間隔出能容納液晶層LCL的腔室,第二基板102上還設有多個第一間隙物SP1與多個第二間隙物SP2。多個第一間隙物SP1分別重疊第一基板101上的多個橋接圖案BP設置,並且適於分別抵接在這些橋接圖案BP上(如圖2所示)。多個第二間隙物SP2可分別重疊第一基板101上的多個主動元件T設置,並且適於分別抵接在這些主動元件T上(如圖3所示)。然而,本發明不限於此。在其他未繪示的實施例中,第二間隙物SP2也可重疊畫素電極PE設置,且部分的第二間隙物SP2可不抵接畫素電極PE,亦即這些第二間隙物SP2可具有不同的高度。To create a chamber between the first substrate 101 and the second substrate 102 to accommodate the liquid crystal layer (LCL), the second substrate 102 is further provided with a plurality of first spacers SP1 and a plurality of second spacers SP2. The plurality of first spacers SP1 are arranged to overlap the plurality of bridging patterns BP on the first substrate 101 and are adapted to abut against these bridging patterns BP (as shown in FIG2 ). The plurality of second spacers SP2 can be arranged to overlap the plurality of active elements T on the first substrate 101 and are adapted to abut against these active elements T (as shown in FIG3 ). However, the present invention is not limited to this. In other embodiments (not shown), the second spacers SP2 can also overlap the pixel electrodes PE, and some of the second spacers SP2 may not abut the pixel electrodes PE. In other words, the second spacers SP2 can have different heights.
特別注意的是,第二共電極層CEL2可藉由覆蓋這些橋接圖案BP來實現其與多個橋接圖案BP的電性連接關係。從另一觀點來說,第一基板101上的第一共電極層CEL1可經由橋接圖案BP與第一間隙物SP1的抵接關係而電性連接第二基板102上的第二共電極層CEL2。據此,可有效降低與多個畫素結構PX同時重疊的第一共電極層CEL1在不同區域的電壓準位差異,進而提升第一共電極層CEL1的電壓準位的分佈均勻性。Of particular note is that the second common electrode layer CEL2 can achieve electrical connection with multiple bridge patterns BP by covering these bridge patterns BP. From another perspective, the first common electrode layer CEL1 on the first substrate 101 can be electrically connected to the second common electrode layer CEL2 on the second substrate 102 through the abutment between the bridge patterns BP and the first spacers SP1. This effectively reduces the voltage level variation between different regions of the first common electrode layer CEL1, which overlaps multiple pixel structures PX, thereby improving the voltage level distribution uniformity of the first common electrode layer CEL1.
另一方面,在本實施例中,多個第二間隙物SP2可設置在第二共電極層CEL2背對第二基板102的一側(如圖3所示)。亦即,第二間隙物SP2與第一間隙物SP1可為不同膜層。舉例來說,第一間隙物SP1與第二間隙物SP2可採用兩道光罩分別進行製作。藉由這樣的設計,可避免第二間隙物SP2因外力的過度擠壓而增加第二共電極層CEL2與第一基板101上的電子元件的電性短路風險。換句話說,可增加第二間隙物SP2的設計彈性。On the other hand, in this embodiment, multiple second spacers SP2 can be disposed on the side of the second common electrode layer CEL2 facing away from the second substrate 102 (as shown in Figure 3). In other words, the second spacers SP2 and the first spacers SP1 can be different film layers. For example, the first spacers SP1 and the second spacers SP2 can be fabricated separately using two photomasks. This design prevents the second spacers SP2 from being excessively squeezed by external forces, thereby increasing the risk of electrical short circuits between the second common electrode layer CEL2 and electronic components on the first substrate 101. In other words, this increases the design flexibility of the second spacers SP2.
然而,本發明不限於此。在另一變形實施例中,顯示面板10A的第二間隙物SP2-A與圖2的第一間隙物SP1可為同一膜層,且都位在第二共電極層CEL2與第二基板102之間(如圖4所示)。舉例來說,第一間隙物SP1與第二間隙物SP2可採用同一道光罩,例如半色調光罩(half-tone mask),進行製作。However, the present invention is not limited to this. In another variant embodiment, the second spacers SP2-A of the display panel 10A and the first spacers SP1 in FIG. 2 can be formed from the same film layer and both are located between the second common electrode layer CEL2 and the second substrate 102 (as shown in FIG. 4 ). For example, the first spacers SP1 and the second spacers SP2 can be manufactured using the same mask, such as a half-tone mask.
在本實施例中,第二基板102上還可選擇性地設有多個彩色濾光圖案CF、遮光圖案層BM與披覆層130。這些彩色濾光圖案CF分別重疊於多個畫素電極PE,且適於讓多種色光(例如紅光、綠光和藍光,但不以此為限)通過。然而,本發明不限於此。在其他實施例中,第二基板102上可不設有彩色濾光圖案CF。在本實施例中,披覆層130覆蓋多個彩色濾光圖案CF與遮光圖案層BM,且多個第二間隙物SP2與第二共電極層CEL2設置在披覆層130上。In this embodiment, the second substrate 102 may optionally be provided with a plurality of color filter patterns CF, a light-shielding pattern layer BM, and a cover layer 130. These color filter patterns CF overlap with the plurality of pixel electrodes PE and are adapted to allow multiple colors of light (e.g., red, green, and blue, but not limited thereto) to pass through. However, the present invention is not limited thereto. In other embodiments, the second substrate 102 may not be provided with the color filter patterns CF. In this embodiment, the cover layer 130 covers the plurality of color filter patterns CF and the light-shielding pattern layer BM, and the plurality of second spacers SP2 and the second common electrode layer CEL2 are provided on the cover layer 130.
以下將列舉另一些實施例以詳細說明本揭露,其中相同的構件將標示相同的符號,並且省略相同技術內容的說明,省略部分請參考前述實施例,以下不再贅述。Other embodiments will be listed below to illustrate the present disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the above embodiments and will not be repeated below.
圖5是依照本發明的第二實施例的顯示面板的正視示意圖。圖6及圖7是圖5的顯示面板的剖視示意圖。圖6對應於圖5的剖線C-C’。圖7對應於圖5的剖線D-D’與剖線E-E’。為清楚呈現起見,圖5僅繪示出圖6及圖7的部分膜層。Figure 5 is a schematic front view of a display panel according to a second embodiment of the present invention. Figures 6 and 7 are schematic cross-sectional views of the display panel in Figure 5 . Figure 6 corresponds to section line C-C' in Figure 5 . Figure 7 corresponds to section lines D-D' and E-E' in Figure 5 . For clarity, Figure 5 only shows a portion of the film layers in Figures 6 and 7 .
請參照圖5至圖7,本實施例的顯示面板20與圖1至圖3的顯示面板10的主要差異在於:畫素結構的設計不同以及第一共電極層與第二共電極層的橋接膜層結構不同。具體而言,在本實施例中,顯示面板20的畫素結構PX-A還可進一步包括電容電極CPE與第一轉接圖案TP1。Referring to Figures 5 to 7 , the display panel 20 of this embodiment differs primarily from the display panel 10 of Figures 1 to 3 in the design of the pixel structure and the structure of the bridge film between the first and second common electrode layers. Specifically, in this embodiment, the pixel structure PX-A of the display panel 20 may further include a capacitor electrode CPE and a first transfer pattern TP1.
詳細地,電容電極CPE設置在閘絕緣層110與絕緣層120之間,且延伸自主動元件T的汲極DE。即,電容電極CPE電性連接主動元件T的汲極DE。第一轉接圖案TP1設置在絕緣層120上,並且經由絕緣層120的接觸孔TH2電性連接電容電極CPE。在本實施例中,絕緣層120上還可設有平坦層140。畫素結構PX-A的畫素電極PE-A可設置在平坦層140上,並經由平坦層140的開口140op2電性連接第一轉接圖案TP1。Specifically, the capacitor electrode CPE is disposed between the gate insulation layer 110 and the insulation layer 120 and extends from the drain electrode DE of the active device T. That is, the capacitor electrode CPE is electrically connected to the drain electrode DE of the active device T. The first transfer pattern TP1 is disposed on the insulation layer 120 and electrically connected to the capacitor electrode CPE via a contact hole TH2 in the insulation layer 120. In this embodiment, a planarization layer 140 may also be disposed on the insulation layer 120. The pixel electrode PE-A of the pixel structure PX-A may be disposed on the planarization layer 140 and electrically connected to the first transfer pattern TP1 via an opening 140op2 in the planarization layer 140.
也就是說,本實施例的畫素電極PE-A是經由第一轉接圖案TP1與電容電極CPE而電性連接主動元件T。在本實施例中,平坦層可由任何所屬技術領域的技術人員所周知的用於顯示面板的任一平坦層來實現,且平坦層可經由任何所屬技術領域的技術人員所周知的任一方法來形成,故於此不加以贅述。In other words, the pixel electrode PE-A of this embodiment is electrically connected to the active device T via the first transfer pattern TP1 and the capacitor electrode CPE. In this embodiment, the planar layer can be implemented using any planar layer used in display panels known to those skilled in the art, and the planar layer can be formed using any method known to those skilled in the art, so detailed description is omitted here.
特別注意的是,電容電極CPE在第一基板101上的正投影位在第一共電極層CEL1-A在第一基板101上的正投影內,且兩者之間設有閘絕緣層110。更具體地說,電容電極CPE與第一共電極層CEL1-A電容耦合並形成畫素結構PX-A的儲存電容。Of particular note is that the orthographic projection of capacitor electrode CPE on first substrate 101 is within the orthographic projection of first common electrode layer CEL1-A on first substrate 101, with gate insulation layer 110 disposed between the two. More specifically, capacitor electrode CPE and first common electrode layer CEL1-A are capacitively coupled to form the storage capacitor of pixel structure PX-A.
在本實施例中,畫素電極PE-A例如是反射式電極,而反射式電極的材料包括金屬、合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。也就是說,本實施例的顯示面板20可以是反射式液晶顯示面板(reflective liquid crystal display panel),但不以此為限。因此,本實施例的第一共電極層CEL1-A雖然也重疊於畫素電極PE-A,但並不具有重疊於畫素電極PE-A的開口(如圖1所示的開口CEL1op)。In this embodiment, the pixel electrode PE-A is, for example, a reflective electrode, and the material of the reflective electrode includes a metal, an alloy, a metal nitride, a metal oxide, a metal oxynitride, or other suitable materials, or a stack of metal and other conductive materials. In other words, the display panel 20 of this embodiment can be a reflective liquid crystal display panel, but is not limited thereto. Therefore, although the first common electrode layer CEL1-A of this embodiment also overlaps the pixel electrode PE-A, it does not have an opening (such as the opening CEL1op shown in FIG. 1 ) that overlaps the pixel electrode PE-A.
另一方面,在本實施例中,橋接圖案BP-A與第一共電極層CEL1-A之間設有第二轉接圖案TP2,且橋接圖案BP-A經由第二轉接圖案TP2電性連接第一共電極層CEL1-A。詳細地,第二轉接圖案TP2可設置在絕緣層120與平坦層140之間,並且經由閘絕緣層110與絕緣層120的接觸孔TH1電性連接第一共電極層CEL1-A。橋接圖案BP-A設置在平坦層140上,並且經由平坦層140的開口140op1電性連接第二轉接圖案TP2。On the other hand, in this embodiment, a second transfer pattern TP2 is provided between the bridge pattern BP-A and the first common electrode layer CEL1-A. The bridge pattern BP-A is electrically connected to the first common electrode layer CEL1-A via the second transfer pattern TP2. Specifically, the second transfer pattern TP2 may be provided between the insulating layer 120 and the planar layer 140 and electrically connected to the first common electrode layer CEL1-A via the contact hole TH1 formed between the gate insulating layer 110 and the insulating layer 120. The bridge pattern BP-A is provided on the planar layer 140 and electrically connected to the second transfer pattern TP2 via the opening 140op1 in the planar layer 140.
在本實施例中,橋接圖案BP-A與畫素電極PE-A可為同一膜層,且第二轉接圖案TP2與第一轉接圖案TP1可為同一膜層。如此,可避免增加額外的製程工序。In this embodiment, the bridge pattern BP-A and the pixel electrode PE-A can be formed in the same film layer, and the second transfer pattern TP2 and the first transfer pattern TP1 can be formed in the same film layer. This avoids adding additional process steps.
由於本實施例的第一共電極層CEL1-A也是經由第一間隙物SP1與橋接圖案BP-A的抵接關係而電性連接第二基板102上的第二共電極層CEL2,與多個畫素結構PX-A同時重疊的第一共電極層CEL1-A在不同區域的電壓準位差異可有效降低,進而提升第一共電極層CEL1-A的電壓準位的分佈均勻性。如此,可提升顯示面板20的操作電性。Because the first common electrode layer CEL1-A of this embodiment is also electrically connected to the second common electrode layer CEL2 on the second substrate 102 via the abutment between the first spacer SP1 and the bridge pattern BP-A, the voltage level differences between different regions of the first common electrode layer CEL1-A, which overlaps with multiple pixel structures PX-A, can be effectively reduced, thereby improving the uniformity of the voltage level distribution of the first common electrode layer CEL1-A. This improves the operating electrical performance of the display panel 20.
圖8是依照本發明的第三實施例的顯示面板的正視示意圖。圖9及圖10是圖8的顯示面板的剖視示意圖。圖9及圖10分別對應於圖8的剖線F-F’與剖線G-G’。為清楚呈現起見,圖8僅繪示出圖9及圖10的部分膜層。Figure 8 is a schematic front view of a display panel according to a third embodiment of the present invention. Figures 9 and 10 are schematic cross-sectional views of the display panel in Figure 8 . Figures 9 and 10 correspond to section lines F-F' and G-G' in Figure 8 , respectively. For clarity, Figure 8 only shows a portion of the film layers in Figures 9 and 10 .
請參照圖8至圖10,本實施例的顯示面板30與圖5至圖7的顯示面板20的主要差異在於:畫素結構的設計不同以及第一共電極層與第二共電極層的橋接膜層結構不同。具體而言,在本實施例中,顯示面板30的畫素結構PX-B雖然未設有如圖7示出的第一轉接圖案TP1,但其進一步包括反射層RFL。Referring to Figures 8 to 10 , the display panel 30 of this embodiment differs primarily from the display panel 20 of Figures 5 to 7 in the design of the pixel structure and the structure of the bridge film between the first and second common electrode layers. Specifically, in this embodiment, while the pixel structure PX-B of the display panel 30 lacks the first transfer pattern TP1 shown in Figure 7 , it further includes a reflective layer RFL.
在本實施例中,畫素電極PE-B例如是光穿透式電極。反射層RFL設置在畫素電極PE-B上,並且與其直接電性接觸。反射層RFL具有重疊於畫素電極PE-B的開口RFLop。反射層RFL可定義出畫素結構PX-B的反射區RA,且其開口RFLop可定義出畫素結構PX-B的透光區TA。特別注意的是,反射層RFL的開口RFLop在第一基板101的基板表面101s上的正投影位在畫素電極PE-B在基板表面101s上的正投影內。更具體地說,本實施例的顯示面板30可以是半穿半反式(transflective)液晶顯示面板或微穿反式液晶顯示面板。In this embodiment, the pixel electrode PE-B is, for example, a light-transmitting electrode. The reflective layer RFL is disposed on the pixel electrode PE-B and is in direct electrical contact therewith. The reflective layer RFL has an opening RFLop that overlaps the pixel electrode PE-B. The reflective layer RFL can define the reflective area RA of the pixel structure PX-B, and its opening RFLop can define the light-transmitting area TA of the pixel structure PX-B. It is particularly noteworthy that the orthographic projection of the opening RFLop of the reflective layer RFL on the substrate surface 101s of the first substrate 101 is located within the orthographic projection of the pixel electrode PE-B on the substrate surface 101s. More specifically, the display panel 30 of this embodiment can be a semi-transflective liquid crystal display panel or a micro-transflective liquid crystal display panel.
另一方面,在本實施例中,第一共電極層CEL1-B是設置在主動元件T上。詳細地,主動元件T上可覆蓋有平坦層140A。第一共電極層CEL1-B設置在平坦層140A上,且為絕緣層120A所覆蓋。特別注意的是,在本實施例中,絕緣層120A的接觸孔TH2重疊於平坦層140A的開口140op2。畫素電極PE-B與反射層RFL可延伸平坦層140A的開口140op2內,並經由絕緣層120A的接觸孔TH2電性連接電容電極CPE。On the other hand, in this embodiment, the first common electrode layer CEL1-B is disposed on the active device T. Specifically, the active device T may be covered with a planar layer 140A. The first common electrode layer CEL1-B is disposed on the planar layer 140A and covered by the insulating layer 120A. Of particular note, in this embodiment, the contact hole TH2 of the insulating layer 120A overlaps the opening 140op2 of the planar layer 140A. The pixel electrode PE-B and the reflective layer RFL may extend into the opening 140op2 of the planar layer 140A and be electrically connected to the capacitor electrode CPE via the contact hole TH2 of the insulating layer 120A.
特別注意的是,電容電極CPE在第一基板101上的正投影位在第一共電極層CEL1-B在第一基板101上的正投影內,且兩者之間設有平坦層140A。電容電極CPE在第一基板101上的正投影位在畫素電極PE-B在第一基板101上的正投影內,且兩者之間設有絕緣層120A。Of particular note is that the orthographic projection of the capacitor electrode CPE on the first substrate 101 is within the orthographic projection of the first common electrode layer CEL1-B on the first substrate 101, with a planar layer 140A disposed between the two. The orthographic projection of the capacitor electrode CPE on the first substrate 101 is also within the orthographic projection of the pixel electrode PE-B on the first substrate 101, with an insulating layer 120A disposed between the two.
另一方面,在本實施例中,顯示面板30還可進一步包括第三共電極層CEL3,設置在閘絕緣層110與第一基板101之間(亦即,第三共電極層CEL3與閘極GE可為同一膜層)。電容電極CPE在第一基板101上的正投影位在第三共電極層CEL3在第一基板101上的正投影內,且兩者之間設有閘絕緣層110。On the other hand, in this embodiment, the display panel 30 may further include a third common electrode layer CEL3 disposed between the gate insulation layer 110 and the first substrate 101 (i.e., the third common electrode layer CEL3 and the gate electrode GE may be the same film layer). The orthographic projection of the capacitor electrode CPE on the first substrate 101 is located within the orthographic projection of the third common electrode layer CEL3 on the first substrate 101, with the gate insulation layer 110 disposed therebetween.
更具體地說,電容電極CPE與第一共電極層CEL1-B電容耦合並形成畫素結構PX-B的第一個儲存電容,第一共電極層CEL1-B與畫素電極PE-B電容耦合並形成畫素結構PX-B的第二個儲存電容,而電容電極CPE與第三共電極層CEL3-B電容耦合並形成畫素結構PX-B的第三個儲存電容。換句話說,相較於圖5的畫素結構PX-A僅具有一個儲存電容,本實施例的畫素結構PX-B可具有相互並聯的三個儲存電容。因此,可大幅增加畫素結構PX-B的儲存電容量。More specifically, capacitor electrode CPE is capacitively coupled to first common electrode layer CEL1-B to form the first storage capacitor of pixel structure PX-B. First common electrode layer CEL1-B is capacitively coupled to pixel electrode PE-B to form the second storage capacitor of pixel structure PX-B. Capacitive electrode CPE is capacitively coupled to third common electrode layer CEL3-B to form the third storage capacitor of pixel structure PX-B. In other words, compared to pixel structure PX-A in FIG5 , which has only one storage capacitor, pixel structure PX-B of this embodiment has three storage capacitors connected in parallel. Consequently, the storage capacity of pixel structure PX-B can be significantly increased.
在本實施例中,橋接圖案BP-B設置在絕緣層120A上,並且經由轉接圖案TP與絕緣層120A的接觸孔TH1電性連接第一共電極層CEL1-B。舉例來說,為了避免增加額外的製程工序,橋接圖案BP-B與畫素結構PX-B的反射層RFL可為同一膜層,而轉接圖案TP與畫素電極PE-B可為同一膜層。因此,相似於反射層RFL與畫素電極PE-B的連接關係,橋接圖案BP-B可直接電性接觸轉接圖案TP。In this embodiment, the bridge pattern BP-B is disposed on the insulating layer 120A and electrically connected to the first common electrode layer CEL1-B via the transfer pattern TP and the contact hole TH1 in the insulating layer 120A. For example, to avoid adding additional process steps, the bridge pattern BP-B and the reflective layer RFL of the pixel structure PX-B can be formed from the same film layer, while the transfer pattern TP and the pixel electrode PE-B can be formed from the same film layer. Therefore, similar to the connection between the reflective layer RFL and the pixel electrode PE-B, the bridge pattern BP-B can directly electrically contact the transfer pattern TP.
由於本實施例的第一共電極層CEL1-B也是經由第一間隙物SP1與橋接圖案BP-B的抵接關係而電性連接第二基板102上的第二共電極層CEL2,與多個畫素結構PX-B同時重疊的第一共電極層CEL1-B在不同區域的電壓準位差異可有效降低,進而提升第一共電極層CEL1-B的電壓準位的分佈均勻性。如此,可提升顯示面板30的操作電性。Because the first common electrode layer CEL1-B of this embodiment is also electrically connected to the second common electrode layer CEL2 on the second substrate 102 via the abutment between the first spacer SP1 and the bridge pattern BP-B, the voltage level differences between different regions of the first common electrode layer CEL1-B, which overlaps with multiple pixel structures PX-B, can be effectively reduced, thereby improving the uniformity of the voltage level distribution of the first common electrode layer CEL1-B. This improves the operating electrical performance of the display panel 30.
另一方面,由於本實施例的畫素結構PX-B具有透光區TA,第一共電極層CEL1-B、電容電極CPE與第三共電極層CEL3分別具有重疊於透光區TA(即反射層RFL的開口RFLop)的開口CEL1op、開口CPEop與開口CEL3op。On the other hand, since the pixel structure PX-B of this embodiment has a light-transmitting area TA, the first common electrode layer CEL1-B, the capacitor electrode CPE, and the third common electrode layer CEL3 respectively have openings CEL1op, CPEop, and CEL3op that overlap the light-transmitting area TA (i.e., the opening RFLop of the reflective layer RFL).
綜上所述,在本發明的一實施例的顯示面板中,第一基板上設有電性連接第一共電極層的多個橋接圖案,而第二基板上設有第二共電極層以及適於分別抵接多個橋接圖案的多個第一間隙物。藉由第二共電極層覆蓋這些第一間隙物以電性接觸這些橋接圖案並實現第一共電極層與第二共電極層間的電性連接關係,可有效降低與多個畫素結構重疊的第一共電極層在不同區域的電壓準位差異,進而提升第一共電極層的電壓準位的分佈均勻性。In summary, in a display panel according to one embodiment of the present invention, a first substrate is provided with a plurality of bridge patterns electrically connected to a first common electrode layer, while a second substrate is provided with a second common electrode layer and a plurality of first spacers adapted to abut the plurality of bridge patterns. The second common electrode layer covers the first spacers, electrically contacting the bridge patterns and establishing electrical connection between the first and second common electrode layers. This effectively reduces voltage level variations across different regions of the first common electrode layer, which overlaps with multiple pixel structures, thereby improving the voltage level uniformity of the first common electrode layer.
10、10A、20、30:顯示面板 101:第一基板 101s:基板表面 102:第二基板 110:閘絕緣層 120、120A:絕緣層 130:披覆層 140、140A:平坦層 140op1、140op2、CEL1op、CEL3op、RFLop、CPEop:開口 BM:遮光圖案層 BP、BP-A、BP-B:橋接圖案 CEL1、CEL1-A、CEL1-B:第一共電極層 CEL2:第二共電極層 CEL3:第三共電極層 CF:彩色濾光圖案 CPE:電容電極 D1、D2、D3:方向 DE:汲極 DL:資料線 GE:閘極 LCL:液晶層 PE、PE-A、PE-B:畫素電極 PX、PX-A、PX-B:畫素結構 RA:反射區 RFL:反射層 SC:半導體圖案 SE:源極 SL:掃描線 SP1:第一間隙物 SP2、SP2-A:第二間隙物 T:主動元件 TA:透光區 TH1、TH2:接觸孔 TP:轉接圖案 TP1:第一轉接圖案 TP2:第二轉接圖案 A-A’、B-B’、C-C’、D-D’、E-E’、F-F’、G-G’:剖線 10, 10A, 20, 30: Display panel 101: First substrate 101s: Substrate surface 102: Second substrate 110: Gate insulation layer 120, 120A: Insulation layer 130: Covering layer 140, 140A: Planarization layer 140op1, 140op2, CEL1op, CEL3op, RFLop, CPEop: Openings BM: Shading pattern layer BP, BP-A, BP-B: Bridging pattern layer CEL1, CEL1-A, CEL1-B: First common electrode layer CEL2: Second common electrode layer CEL3: Third common electrode layer CF: Color filter pattern CPE: Capacitor electrode D1, D2, D3: Direction DE: Drain DL: Data Line GE: Gate LCL: Liquid Crystal Layer PE, PE-A, PE-B: Pixel Electrodes PX, PX-A, PX-B: Pixel Structure RA: Reflective Area RFL: Reflective Layer SC: Semiconductor Pattern SE: Source SL: Scan Line SP1: First Spacer SP2, SP2-A: Second Spacer T: Active Device TA: Transparent Area TH1, TH2: Contact Holes TP: Transfer Pattern TP1: First Transfer Pattern TP2: Second Transfer Pattern A-A’, B-B’, C-C’, D-D’, E-E’, F-F’, G-G’: Section Lines
圖1是依照本發明的第一實施例的顯示面板的正視示意圖。 圖2及圖3是圖1的顯示面板的剖視示意圖。 圖4是圖3的顯示面板的另一種變形實施態樣的剖視示意圖。 圖5是依照本發明的第二實施例的顯示面板的正視示意圖。 圖6及圖7是圖5的顯示面板的剖視示意圖。 圖8是依照本發明的第三實施例的顯示面板的正視示意圖。 圖9及圖10是圖8的顯示面板的剖視示意圖。 Figure 1 is a schematic front view of a display panel according to a first embodiment of the present invention. Figures 2 and 3 are schematic cross-sectional views of the display panel of Figure 1. Figure 4 is a schematic cross-sectional view of another modified embodiment of the display panel of Figure 3. Figure 5 is a schematic front view of a display panel according to a second embodiment of the present invention. Figures 6 and 7 are schematic cross-sectional views of the display panel of Figure 5. Figure 8 is a schematic front view of a display panel according to a third embodiment of the present invention. Figures 9 and 10 are schematic cross-sectional views of the display panel of Figure 8.
10:顯示面板 10: Display Panel
101:第一基板 101: First substrate
101s:基板表面 101s: Substrate Surface
102:第二基板 102: Second substrate
110:閘絕緣層 110: Gate insulation layer
120:絕緣層 120: Insulating layer
130:披覆層 130: Covering layer
BM:遮光圖案層 BM: Light-blocking pattern layer
BP:橋接圖案 BP: Bridge pattern
CEL1:第一共電極層 CEL1: First common electrode layer
CEL2:第二共電極層 CEL2: Second common electrode layer
D3:方向 D3: direction
LCL:液晶層 LCL: Liquid Crystal Layer
SP1:第一間隙物 SP1: First gap
TH1:接觸孔 TH1: Contact hole
A-A’:剖線 A-A’: section line
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