TW202518800A - Electronic Circuit Protection Device - Google Patents

Abstract

The electronic circuit protection device of the invention comprises a first semiconductor, a second semiconductor, a third semiconductor, a first resistor, a second resistor. a third resistor, a first diode and a voltage comparator, constituting an application circuit with load overload or short circuit protection function, which avoids the damage caused by overload or short circuit at both terminals of the load, and the semiconductor intelligence line is used to indicate the current overload or short circuit function of the first semiconductor.

Description

Electronic circuit protection device

The electronic circuit protection device of the present invention has the function of protecting the DC power supply when the load is overloaded or short-circuited at both ends during the application of the DC circuit, and applies the semiconductor smart line to indicate the current overload or short circuit of the first semiconductor in the electronic technology field.

The inventor of the electronic circuit protection device of the present invention has searched for related semiconductor protection devices and related electronic protection circuit invention documents, but has not found the same or similar technology as the electronic circuit protection device of the present invention. In particular, the first semiconductor and the second semiconductor of the present invention are connected in series, and the second semiconductor provides a drain-source on-state resistance, which is used as the control data for the drain-source voltage of the second semiconductor generated when the drain current of the first semiconductor passes through the second semiconductor. In addition, a circuit for the self-protection of the first semiconductor and the self-locking function of the voltage comparator are provided, so that the DC circuit can protect the DC power supply when the load is overloaded or the two ends are short-circuited during the application process. This is a pioneering invention.

This invention uses the semiconductor intelligence line (Semiconductor Intelligence Line 300) of US Patent US 11,749,980 B2 to apply to the action function of the electronic circuit protection device of this invention, so that this invention has the function of indicating the current overload or short circuit of the first semiconductor. At the same time, the inventor of US Patent US11,749,980 B2 is declared to be the applicant of this case.

The purpose of this invention is:

1. The present invention uses a first semiconductor, a second semiconductor, a third semiconductor, a first resistor, a second resistor, a third resistor, a first diode and a voltage comparator to protect the DC power supply when a load overload or short circuit occurs in the DC circuit power supply.

2. When a load short circuit occurs, the present invention uses the first semiconductor to perform an open circuit action in a very short time, thereby achieving the function of protecting the DC power supply circuit and avoiding various disasters caused by load short circuit.

3. When the present invention is turned off, the first semiconductor is in an open circuit (Off) state, and the DC power supply does not supply voltage to the load.

4. When the present invention is turned on, the first semiconductor is in the on state, and the DC power supply voltage is equal to the load.

5. Regardless of whether the present invention is turned on or off, the second semiconductor remains in the on state, and the power-on or power-off action of the present invention is performed by the first semiconductor.

6. The semiconductor smart line used in the present invention has the function of indicating the current overload or short circuit of the first semiconductor.

The present invention has the following features:

1. The first semiconductor and the second semiconductor of the present invention have the characteristic of being connected in series, and the first semiconductor is responsible for opening and closing the DC power supply to supply power to the load.

2. The second semiconductor of the present invention provides a drain-source conduction resistance, which serves as the control data for the drain-source voltage of the second semiconductor generated by the second semiconductor when the drain current of the first semiconductor is overloaded or short-circuited.

3. The third semiconductor of the present invention is responsible for controlling the opening and closing actions of the first semiconductor to achieve the purpose of overload or short-term protection of the DC power supply at both ends of the load.

4. The present invention is provided with a first resistor having the function of limiting current to prevent the gate of the first semiconductor from being damaged by excessive current.

5. The present invention is provided with a second resistor that has the function of limiting current to prevent the gate of the second semiconductor from being damaged by excessive current.

6. The present invention is provided with a third resistor which has the function of limiting current to prevent excessive current from flowing into the positive input terminal of the voltage comparator and damaging the voltage comparator.

7. The present invention is provided with a first diode having the function of unidirectionally conducting current, so that the voltage output from the output end of the voltage comparator can be unidirectionally supplied to the positive input end of the voltage comparator.

8. The present invention is provided with a circuit composed of a first semiconductor, a third semiconductor and a voltage comparator, so that the first semiconductor has a self-protection function.

9. The present invention is provided with a circuit composed of a voltage comparator and a first diode to achieve the function of self-locking (Inter Lock) of the voltage comparator.

10. The first semiconductor of the present invention includes an N-channel metal oxide semiconductor field effect transistor (N-channel MOSFET) and an insulated gate bipolar transistor (IGBT), both of which can be selected according to needs.

11. The second semiconductor of the present invention includes an N-channel metal oxide semiconductor field effect transistor and an insulating gate bipolar transistor, both of which can be selected according to needs.

12. The third semiconductor of the present invention includes an N-channel metal oxide semiconductor field effect transistor and an insulating gate bipolar transistor, both of which can be selected according to needs.

13. The first semiconductor of the present invention can be a four-pin packaged semiconductor, including a four-pin packaged N-channel metal oxide semiconductor field effect transistor and a four-pin packaged insulated gate bipolar transistor, both of which can be selected according to needs.

14. The first semiconductor of the present invention may be a module-packaged semiconductor, including a module-packaged N-channel metal oxide semiconductor field effect transistor and a module-packaged insulated gate bipolar transistor, both of which may be selected according to needs.

15. The present invention is provided with a second semiconductor circuit which is composed of a second semiconductor, a second resistor and a second power source.

16. The second semiconductor circuit of the present invention can be replaced by a resistor sensor for application needs.

17. In order to meet the application requirements, the second semiconductor circuit of the present invention can be replaced by the equivalent resistors at both ends of the Kelvin emitter E2 and the power emitter E1 of the first semiconductor.

18. The present invention uses semiconductor smart lines to enable them to have the function of indicating current overload or short circuit of the first semiconductor.

10: Load

11: First Power Source

12: Second power source

13: Third power source

14: DC power supply

15: Positive input terminal of voltage comparator

16: Negative input terminal of voltage comparator

17: Output terminal of voltage comparator

18: First resistor

19: Second resistor

20: Voltage comparator

21: The first semiconductor

22: Second semiconductor

23: The third semiconductor

24: The third resistor

25: The first diode

26:Resistor sensor

28: Equivalent resistance between the Kelvin emitter E2 and the power emitter E1 of the first semiconductor 21

29: Fourth power source

300: Semiconductor smart line

Figure 1 is a first embodiment of the electronic circuit protection device of the present invention.

Figure 2 is a second embodiment of the electronic circuit protection device of the present invention.

Figure 3 is a third embodiment of the electronic circuit protection device of the present invention.

Figure 4 is a fourth embodiment of the electronic circuit protection device of the present invention.

Figure 5 is a fifth embodiment of the electronic circuit protection device of the present invention.

As shown in FIG. 1 , this is the first embodiment of the electronic circuit protection device of the present invention. As can be seen from the figure, the electronic circuit protection device of the present invention includes a first semiconductor 21, a second semiconductor 22, a third semiconductor 23, a first resistor 18, a second resistor 19, a third resistor 24, a first diode 25 and a voltage comparator 20.

The drain D (Drain, D) of the first semiconductor 21 is used to connect to the first end of the external load 10, the first end of the first resistor 18 is used to connect to the external first power source 11, the source S (Source, S) of the second semiconductor 22 is used to connect to the negative power end of the DC power source 14, and the positive power end of the DC power source 14 is connected to the second end of the load 10, wherein the first semiconductor 21 and the second semiconductor 22 form a series connection.

The gate G (Gate, G) of the first semiconductor 21 is connected to the second end of the first resistor 18 and the drain D of the third semiconductor 23, the source S of the third semiconductor 23 is connected to the source S of the first semiconductor 21, the gate G of the third semiconductor 23 is connected to the output terminal (Output) 17 of the voltage comparator 20, the first end of the first resistor 18 and the positive power terminal of the voltage comparator 20 are connected to the positive power terminal of the first power supply 11 or the positive power terminal of the second power supply 12 or another power supply according to the needs, without limitation.

The positive input terminal (Non-inverting Input) 15 of the voltage comparator 20 is connected to the first end of the third resistor 24 and the cathode terminal (Cathode) of the first diode 25, the anode terminal (Anode) of the first diode 25 is connected to the output terminal 17 of the voltage comparator 20, the second end of the third resistor 24 is connected to the source S of the first semiconductor 21, and the negative input terminal (Inverting Input) 16 of the voltage comparator 20 is connected to the third power source 13, and the third power source 13 is the reference voltage (Reference Voltage) of the negative input terminal 16 of the voltage comparator 20. Voltage), the negative power terminal of the voltage comparator 20 is connected to the source S of the second semiconductor 22 and the negative power terminal of the DC power source 14, and the positive power terminal of the voltage comparator 20 is connected to the positive power terminal of the first power source 11 or the positive power terminal of the second power source 12.

The gate G of the second semiconductor 22 is connected to the second end of the second resistor 19, and the first end of the second resistor 19 is connected to the positive power end of the second power source 12. The second semiconductor 22, the second resistor 19 and the second power source 12 constitute a second semiconductor circuit.

As shown in FIG. 1 , when the two ends of the load 10 are short-circuited, according to the drain-source conduction resistance of the second semiconductor 22, when the drain current (Drain Current) rises to the corresponding drain-source voltage of the second semiconductor 22, and reaches the positive input terminal 15 of the voltage comparator 20 through the third resistor 24. If the drain-source voltage is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the anode terminal of the first diode 25 and the gate G of the third semiconductor 23. At this time, the cathode terminal of the first diode 25 supplies power to the positive input terminal 15 of the voltage comparator 20, so that the output terminal 17 of the voltage comparator 20 maintains the output. Positive voltage is applied to the voltage comparator 20, and the voltage comparator 20 has a self-locking function. At the same time, the drain D and source S of the third semiconductor 23 are turned on, and the drain D and source S of the first semiconductor 21 are open, so that the first semiconductor 21 has a self-protection function. At this time, the DC power supply 14 does not supply power to the short-circuited load 10, so that the DC power supply 14 is protected; similarly, the drain-source conduction state resistance between the drain D and source S of the second semiconductor 22 is appropriately selected, and the overload protection function can be achieved in combination with the reference voltage of the negative input terminal 16 of the voltage comparator 20.

From the above, it can be seen that the output terminal 17 of the voltage comparator 20 outputs a positive voltage to power the gate G of the third semiconductor 23. At this time, the drain D and source S of the third semiconductor 23 are turned on, and the drain D and source S of the first semiconductor 21 are open, so that the first semiconductor 21 has the function of self-protection.

As shown in FIG. 2, the second embodiment of the electronic circuit protection device of the present invention is shown. As can be seen from the figure, the first semiconductor 21 adopts NVHL060N090SIC (MOSFET-SIC Power, Single N-Channal) as an example. In the output characteristic table (Output Characteristics) is used to illustrate the action function of FIG. 1. The semiconductor smart line 300 is set on the drain current ID axis of the output characteristics table at about 52A, and is parallel to the drain-source voltage VDS axis, and crosses the VGS=15V, VGS=13V and VGS=12V gate-source voltage lines. The VGS=15V, VGS=13V and VGS=12V gate-source voltage lines are perpendicular to the corresponding output characteristics table drain-source voltage VDS axis. The current of about 52A on the drain current ID axis flows through the second The current of the semiconductor 22 and the current of the first semiconductor 21, therefore, if the corresponding drain-source voltage VDS at both ends of the second semiconductor 22 is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to open the drain D and source S of the first semiconductor 21, so that the first semiconductor 21 is protected. In other words, the semiconductor smart line 300 also indicates that the application of the drain current is limited to not exceeding the semiconductor smart line 300, so the semiconductor smart line 300 has the function of indicating that the drain current of the first semiconductor 21 is overloaded or short-circuited.

As shown in FIG2 , the semiconductor smart line 300 is set at about 37A on the drain current ID axis of the output characteristic table and parallel to the drain-source voltage VDS axis. It crosses the gate-source voltage lines of VGS=15V, VGS=13V and VGS=12V. The current of about 37A on the drain current ID axis is the current flowing through the second semiconductor 22 and the first semiconductor 21. Therefore, the second semiconductor If the corresponding drain-source voltage VDS at both ends of the conductor 22 is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to open the drain D and source S of the first semiconductor 21, thereby protecting the first semiconductor 21. Therefore, the semiconductor smart line 300 has the function of indicating that the drain current of the first semiconductor 21 is overloaded or short-circuited.

As shown in FIG. 2 , the semiconductor smart line 300 is set on the drain current ID axis of the output characteristic table at about 20A, and is parallel to the drain-source voltage VDS axis, which intersects the gate-source voltage lines of VGS=15V, VGS=13V, VGS=12V and VGS=10V. The current of about 20A on the drain current ID axis is the current flowing through the second semiconductor 22 and the first semiconductor 21. Therefore, if the corresponding drain-source voltage VDS at both ends of the second semiconductor 22 is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to open the drain D and source S of the first semiconductor 21, thereby protecting the first semiconductor 21. Therefore, the semiconductor intelligence line 300 has the function of indicating that the drain current of the first semiconductor 21 is overloaded or short-circuited.

As can be seen from the above, there are three semiconductor smart lines 300 in FIG. 2, which are about 52A, about 37A and about 20A on the drain current ID axis of the output characteristic table in FIG. 2. In addition to using one semiconductor smart line 300 alone, if you want to use the range between about 52A and about 20A or about 37A and about 20A, you can By changing the reference voltage of the negative input terminal 16 of the third power source 13 connected to the voltage comparator 20 to a continuously changing reference voltage, the application of the drain current ID between about 52A and about 20A or about 37A and about 20A can be achieved. Therefore, the semiconductor smart line 300 is set on at least one of the drain current ID axes of the output characteristic table, depending on the application requirements, and is not limited.

As shown in FIG3, it is the third embodiment of the electronic circuit protection device of the present invention. As can be seen from the figure, the first semiconductor 21 and the third semiconductor 23 in FIG1 are changed from N-channel metal oxide semiconductor field effect transistors to insulated gate bipolar transistors, and the second semiconductor circuit is replaced by a resistor sensor 26. The first end of the resistor sensor 26 is connected to the emitter E of the first semiconductor 21, and the second end of the resistor sensor 26 is connected to the negative power supply terminal of the voltage comparator 20. The other circuit structures are the same as FIG1 and will not be described in detail.

As shown in FIG3 , the collector C (Collector, C) of the first semiconductor 21 is used to connect to the first end of the external load 10, the first end of the first resistor 18 is used to connect to the external first power source 11, the second end of the resistance sensor 26 is used to connect to the negative end of the DC power source 14, and the positive power end of the DC power source 14 is connected to the second end of the load 10.

As shown in FIG3 , when the two ends of the load 10 are short-circuited, the voltage at the two ends of the resistor sensor 26 reaches the positive input terminal 15 of the voltage comparator 20 through the third resistor 24. If the voltage is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the anode terminal of the first diode 25 and the gate G of the third semiconductor 23. At this time, the cathode terminal of the first diode 25 supplies power to the positive input terminal 15 of the voltage comparator 20, so that the voltage comparator 20 The output terminal 17 maintains the output positive voltage, and the voltage comparator 20 has a self-locking function. At the same time, the collector C and emitter E of the third semiconductor 23 are turned on, and the collector C and emitter E of the first semiconductor 21 are open, so that the first semiconductor 21 has a self-protection function. At this time, the DC power supply 14 does not supply power to the short-circuited load 10, so that the DC power supply 14 is protected; similarly, the appropriate selection of the resistance value of the resistor sensor 26, combined with the reference voltage of the negative input terminal 16 of the voltage comparator 20, can also achieve the overload protection function.

As can be seen from the above, the function of the resistance sensor 26 is to convert the collector current of the first semiconductor 21 into a voltage as a reference data for the overload or short-circuit current of the load 10. The resistance sensor 26 can also be a shunt with equivalent resistance characteristics or a circuit with equivalent resistance characteristics, such as a circuit with one or more resistors in series, a circuit with multiple resistors in parallel, or a circuit with multiple resistors in series and parallel. They are all circuits with equivalent resistance characteristics, because their operating principles are the same, and they are not limited.

As shown in FIG. 4, the fourth embodiment of the electronic circuit protection device of the present invention is shown in FIG. 3. The resistance sensor 26 is replaced by an effective resistance (Effective Resistor) at both ends of the Kelvin Emitter E2 and the Power Emitter E1 of the first semiconductor 21 in a four-pin package. Resistor) 28, the Kelvin emitter E2 of the first semiconductor 21 is connected to the emitter E of the third semiconductor 23 and the second end of the third resistor 24, the power emitter E1 of the first semiconductor 21 is connected to the negative power supply end of the voltage comparator 20, and the positive power supply end of the voltage comparator 20 is connected to the fourth power supply 29. In addition to the four-pin package, the first semiconductor 21 of the present invention can also be packaged in a module. One of them can be selected according to the needs. The other circuit structures are the same as Figure 3 and are not repeated here.

As shown in FIG4 , the collector C of the first semiconductor 21 is used to connect the first end of the external load 10, the first end of the first resistor 18 is used to connect the first external power source 11, the power emitter E1 of the first semiconductor 21 is used to connect the negative power end of the DC power source 14, the positive power end of the DC power source 14 is connected to the second end of the load 10, and the equivalent resistance 28 is formed between the Kelvin emitter E2 of the first semiconductor 21 and the power emitter E1.

As shown in FIG4 , when the two ends of the load 10 are short-circuited, the voltage at the two ends of the Kelvin emitter E2 and the power emitter E1 of the first semiconductor 21 reaches the positive input terminal 15 of the voltage comparator 20 through the third resistor 24. If the voltage is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the anode terminal of the first diode 25 and the gate G of the third semiconductor 23. At this time, the cathode terminal of the first diode 25 supplies power to the positive input terminal 15 of the voltage comparator 20, so that the output terminal 17 of the voltage comparator 20 maintains the positive voltage. The positive voltage is outputted continuously, and the voltage comparator 20 has a self-locking function. At the same time, the collector C and the emitter E of the third semiconductor 23 are turned on, and the collector C and the Kelvin emitter E2 of the first semiconductor 21 are open, so that the first semiconductor 21 has a self-protection function. At this time, the DC power supply 14 does not supply power to the short-circuited load 10, so that the DC power supply 14 is protected; similarly, the equivalent resistance 28 value at both ends of the Kelvin emitter E2 and the power emitter E1 of the first semiconductor 21 is appropriately selected, and the overload protection function can be achieved in combination with the reference voltage of the negative input terminal 16 of the voltage comparator 20.

As shown in FIG. 5, the fifth embodiment of the electronic circuit protection device of the present invention is shown. As can be seen from the figure, the first semiconductor 21 adopts IRGP4266DPbF (IGBT) as an example. A semiconductor smart line 300 is set on the output characteristic table of the IRGP4266DPbF application data sheet to illustrate the action functions of FIG. 3 and FIG. 4. 0 is set at about 120A on the collector current IC axis of the output characteristics table and is parallel to the collector-emitter voltage VCE axis. It crosses the VGE=15V and VGE=12V gate-emitter voltage lines, and the VGE=15V and VGE=12V gate-emitter voltage lines are perpendicular to the collector-emitter voltage VCE axis. The current of about 120A on the collector current IC axis flows through the The current of the equivalent resistor 28 between the Kelvin emitter E2 and the power emitter E1 of the first semiconductor 21 is detected by the resistance sensor 26 or the resistance sensor 26. Therefore, if the voltage corresponding to the equivalent resistor 28 between the Kelvin emitter E2 and the power emitter E1 of the first semiconductor 21 is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the voltage comparator 20 is The output terminal 17 of 20 outputs a positive voltage to open the collector C and emitter E of the first semiconductor 21, thereby protecting the first semiconductor 21. In other words, the semiconductor intelligence line 300 also indicates that the application limit of the collector current is not more than the semiconductor intelligence line 300. Therefore, the semiconductor intelligence line 300 has the function of indicating that the collector current of the first semiconductor 21 is overloaded or short-circuited.

As shown in FIG5 , the semiconductor smart line 300 is set at about 85A on the collector current IC axis of the output characteristic table and parallel to the collector-emitter voltage VCE axis, which crosses the gate-emitter voltage lines VGE=15V and VGE=12V. The current of about 85A on the collector current IC axis is the current flowing through the equivalent resistor 28 at both ends of the Kelvin emitter E2 and the power emitter E1 of the resistor sensor 26 or the first semiconductor 21. Therefore, the resistor sensor 26 or the first If the corresponding voltage at both ends of the equivalent resistor 28 between the Kelvin emitter E2 and the power emitter E1 of the semiconductor 21 is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to open the collector C and the emitter E of the first semiconductor 21, thereby protecting the first semiconductor 21. Therefore, the semiconductor intelligence line 300 has the function of indicating that the collector current of the first semiconductor 21 is overloaded or short-circuited.

As shown in FIG5 , the semiconductor smart line 300 is set at about 35A on the collector current IC axis of the output characteristic table and parallel to the collector-emitter voltage VCE axis, which intersects the gate-emitter voltage lines of VGE=15V, VGE=12V and VGE=10V. The current of about 35A on the collector current IC axis is the current flowing through the resistor sensor 26 or the current of the equivalent resistor 28 at both ends of the Kelvin emitter E2 and the power emitter E1 of the first semiconductor 21. Therefore, the resistor sensor If the voltage corresponding to the two ends of the equivalent resistor 28 of the detector 26 or the Kelvin emitter E2 and the power emitter E1 of the first semiconductor 21 is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to open the collector C and the emitter E of the first semiconductor 21, thereby protecting the first semiconductor 21. Therefore, the semiconductor intelligence line 300 has the function of indicating the collector current overload or short circuit of the first semiconductor 21.

As can be seen from the above, there are three semiconductor smart lines 300 in FIG. 5, which are about 120A, about 85A and about 35A on the collector current IC axis of the output characteristic table in FIG. 5. In addition to using only one semiconductor smart line 300, if you want to use the range between about 120A and about 35A or about 85A and about 35A, The reference voltage of the negative input terminal 16 of the third power source 13 connected to the voltage comparator 20 can be changed to a continuously changing reference voltage, so that the application of the collector current IC between about 120A and about 35A or about 85A and about 35A can be achieved. Therefore, the semiconductor smart line 300 is set on at least one of the collector current IC axes of the output characteristic table, depending on the application requirements, and is not limited.

From the above, it can be seen that the first diode 25 in Figures 1, 3 and 4 has the function of conducting current in one direction. If the output terminal 17 of the voltage comparator 20 has the function of conducting current in one direction, the first diode 25 can be omitted and directly connected to the positive input terminal 15 of the voltage comparator 20.

From the above, it can be seen that the first semiconductor 21 in FIG. 4 can be replaced by a four-pin packaged insulated gate bipolar transistor and a four-pin packaged N-channel metal oxide semiconductor field effect transistor according to the needs; similarly, the module packaged insulated gate bipolar transistor can be replaced by a module packaged N-channel metal oxide semiconductor field effect transistor. Both can be selected according to the needs.

As can be seen from the above, FIG1 is connected with the first power supply 11, the second power supply 12 and the third power supply 13, FIG3 is connected with the first power supply 11 and the third power supply 13, and FIG4 is connected with the first power supply 11, the third power supply 13 and the fourth power supply 29. In FIG4, the negative power supply terminal of the first power supply 11 is connected to the negative power supply terminal of the fourth power supply 29, and the fourth power supply 29 supplies power to the positive power supply terminal and the negative power supply terminal of the voltage comparator 20.

In accordance with application requirements, the negative power supply terminal of the first power supply 11 in FIG. 4 can be connected to the Kelvin emitter E2. However, the fourth power supply 29 is not shown in FIG. 4 and supplies power to the positive power supply terminal and the negative power supply terminal of the voltage comparator 20.

As can be seen from the above, the first semiconductor 21, the second semiconductor 22 and the third semiconductor 23 in FIG. 1 have the same operating principle and can be partially or completely replaced by an insulated gate bipolar transistor from an N-channel metal oxide semiconductor field effect transistor according to needs.

From the above, it can be seen that the first semiconductor 21 and the third semiconductor 23 in Figure 3 have the same operating principle, and can be partially or completely replaced by N-channel metal oxide semiconductor field effect transistors from insulated gate bipolar transistors according to their needs.

From the above, it can be seen that the third semiconductor 23 in Figure 4 has the same operating principle and can be replaced by an N-channel metal oxide semiconductor field effect transistor instead of an insulated gate bipolar transistor according to needs.

For the sake of simplicity, dots are used to mark the diagram. Anyone with knowledge of the industry knows that power supplies have positive and negative power terminals, which are not marked in the diagram, so this is a special statement.

From the above description of the action principle and functional action, it can be seen that the present invention can be implemented accordingly.

10: Load

11: First Power Source

12: Second power source

13: Third power source

14: DC power supply

15: Positive input terminal of voltage comparator

16: Negative input terminal of voltage comparator

17: Output terminal of voltage comparator

18: First resistor

19: Second resistor

20: Voltage comparator

21: The first semiconductor

22: Second semiconductor

23: The third semiconductor

24: The third resistor

25: The first diode

Claims (10)

An electronic circuit protection device has the function of protecting the DC power supply when the load is overloaded or short-circuited at both ends during the DC circuit application process. The electronic circuit protection device includes: A first semiconductor having a drain, a source and a gate, wherein the drain of the first semiconductor has the function of providing a first end connection for the load, and the second end of the load is connected to the positive power supply terminal of the DC power supply; A second semiconductor having a drain, a source and a gate. The drain-source voltage of the second semiconductor can provide data of the drain current of the first semiconductor when it is overloaded or short-circuited. The drain of the second semiconductor is connected to the source of the first semiconductor. The source of the second semiconductor has the function of providing a negative power supply terminal connection for the DC power supply; A third semiconductor having a drain, a source and a gate, the source of the third semiconductor being connected to the source of the first semiconductor, and the drain of the third semiconductor being connected to the gate of the first semiconductor; A first resistor having a first end and a second end, the second end of the first resistor is connected to the gate of the first semiconductor, and the first end of the first resistor has the function of providing a first power connection; A second resistor having a first end and a second end, the second end of the second resistor is connected to the gate of the second semiconductor, and the first end of the second resistor has the function of providing a second power supply connection; A third resistor having a first end and a second end, wherein the second end of the third resistor is connected to the source of the first semiconductor, the drain of the second semiconductor and the source of the third semiconductor; A first diode having an anode end and a cathode end, the cathode end of the first diode being connected to the first end of the third resistor and having the function of conducting current in one direction; and A voltage comparator has a positive input terminal, a negative input terminal and an output terminal. The positive input terminal of the voltage comparator is connected to the first terminal of the third resistor and the cathode terminal of the first diode. The output terminal of the voltage comparator is connected to the anode terminal of the first diode and the gate terminal of the third semiconductor. The negative input terminal of the voltage comparator has the function of providing a third power supply connection. As in claim 1, the electronic circuit protection device, wherein the circuit formed by the first semiconductor, the third semiconductor and the voltage comparator enables the first semiconductor to have a self-protection function. As in claim 1, the circuit formed by the voltage comparator and the first diode enables the voltage comparator to have a self-locking function. As in claim 1, the second semiconductor circuit formed by the second resistor, the second semiconductor and the second power source can be replaced by a resistance sensor or an equivalent resistor at both ends of the Kelvin emitter E2 and the power emitter E1 of the first semiconductor. As in claim 1, the first semiconductor, the second semiconductor or the third semiconductor is an N-channel metal oxide semiconductor field effect transistor that can be partially or completely replaced by an insulating gate bipolar transistor. A method for using a semiconductor smart line, the semiconductor smart line is used to indicate that under a set drain current, when the drain current value exceeds the semiconductor smart line, the drain and source of the first semiconductor are open-circuited. The method for using the semiconductor smart line includes: The semiconductor smart line is arranged on the drain current axis of the output characteristic table of the first semiconductor and is horizontally parallel to the drain-source voltage axis of the output characteristic table of the first semiconductor; and The semiconductor intelligence line is cut horizontally and parallelly through at least one gate-source voltage line on the output characteristic table of the first semiconductor. As in claim 6, the method for using a semiconductor smart line, wherein the drain current value on the drain current axis has the function of indicating the application limit of the drain current. A method for using a semiconductor smart line, the semiconductor smart line is used to indicate that under a set collector current, when the collector current value exceeds the semiconductor smart line, the collector and emitter of the first semiconductor are open-circuited. The method for using the semiconductor smart line includes: The semiconductor smart line is arranged on the collector current axis of the output characteristic table of the first semiconductor and is horizontally parallel to the collector-emitter voltage axis of the output characteristic table of the first semiconductor; and The semiconductor intelligence line is cut horizontally and parallelly through at least one gate-emitter voltage line on the output characteristic table of the first semiconductor. As in claim 8, the method for using a semiconductor smart line, wherein the collector current value on the collector current axis has the function of indicating the application limit of the collector current. A method for using a semiconductor smart line as described in any one of claim 6 or 8, wherein there is at least one semiconductor smart line on the output characteristic table of the first semiconductor.

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