TW202136550A - 薄膜電阻層製備方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 20
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 238000005121 nitriding Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 46
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 231100000572 poisoning Toxicity 0.000 description 2
- 230000000607 poisoning effect Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
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Abstract
本發明提供一種薄膜電阻層製備方法，利用磁控濺鍍方法於基板表面形成氮化鉭層，再形成五氧化二鉭層於氮化鉭層上，最後經退火處理以得到具低電阻值變化率的薄膜電阻層。
Description
本發明是關於一種薄膜電阻層製備方法，特別有關一種具穩定電阻值的薄膜電阻層製備方法。
一般反應式直流濺鍍方式，是將反應性氣體與濺射粒子在基材表面進行反應。而鍍膜的成分與反應性氣體分壓有關，分壓過低造成反應物不足；反之，使得反應性氣體不能與濺射粒子完全反應，導致殘留氣體與靶材表面發生反應形成化合物，而被化合物包覆的靶材則會降低濺射產率，稱為靶中毒(target poisoning)。
另外，隨著電子工業技術水平的進步以及精密電子設備長時間運作的需求，對於電阻元件的電阻值穩定性亦有進一步的要求。
本發明提供一種薄膜電阻層製備方法，利用磁控濺鍍方法於基板表面形成氮化鉭層，再形成五氧化二鉭層於氮化鉭層上以得到具穩定電阻值的薄膜電阻層。此方法所形成的薄膜電阻層具有良好的附著性、致密度高、薄膜厚度均勻、沉積速度快等優點，以及可解決一般反應式直流濺鍍方式造成的靶中毒現象。
以下將詳述本發明之各實施例，並配合圖式作為例示，以利讀者具有較佳的理解。除了這些詳細說明之外，本發明亦可廣泛地施行於其它的實施例中，任何所述實施例的輕易替代、修改、等效變化都應理解被包含在本發明之範圍內，專利範圍之界定應以申請專利範圍為準。特別注意的是，圖式僅為示意之用，並非代表元件實際之尺寸或數量，有些細節可能未完全繪出，以求圖式之簡潔。
請參考圖1，為本發明薄膜電阻層製備流程圖。首先，準備鉭(Ta)靶材及基板於腔體內，如步驟S101所示，其中鉭靶材純度大於99.99wt%；將該腔體抽真空，使處於真空狀態，如步驟S102所示；通入氮氣至腔體，如步驟S103所示；於基板表面以脈衝直流磁控濺鍍(Impulse DC magnetron sputtering)氮化鉭(TaN)層，如步驟S104所示；通入氧氣至腔體，如步驟S105所示；於氮化鉭層表面以脈衝直流磁控濺鍍五氧化二鉭(Ta2
O5
)層，以得到半成品薄膜電阻層，如步驟S106所示；最後，將半成品薄膜電阻層於150-750℃環境下，退火(Annealing)處理5分鐘至24小時，以得到薄膜電阻層，該薄膜電阻的電阻溫度係數(TCR)為0±3ppm/℃。在一些實施例中，前述通入氮氣以磁控濺鍍形成氮化鉭層及通入氧氣以磁控濺鍍形成五氧化二鉭層之步驟，可在不同且獨立或不同且相連接的腔體進行。
在通入氮氣及氧氣至腔體的步驟中，可同時通入非反應性氣體至腔體，如氬氣或其同族元素氣體等。在此實施例中，氮氣與氬氣比例為1:4-1:999，以及氧氣與氬氣比例為1:1.5-1:999。
在脈衝直流磁控濺鍍步驟中，氮化鉭層及五氧化二鉭層的濺鍍溫度為100-450℃、濺鍍功率為0.25-2.5千瓦(kW)及濺鍍時間為5-50分鐘，其中濺鍍溫度較佳為200±2℃。
接著參考圖2，係為本發明薄膜電阻的側剖面示意圖。在此實施例中，薄膜電阻10包含基板11、氮化鉭層13、五氧化二鉭層14及二電極12，其中氮化鉭層13及五氧化二鉭層14作為電阻層16，以及氮化鉭層13及五氧化二鉭層14是由上述製備流程取得。
氮化鉭層13實質覆蓋於基板11的上表面上，以及五氧化二鉭層14實質覆蓋於氮化鉭層13上，其中五氧化二鉭層14厚度為10-200奈米(nm)。
二電極12分開設置於基板11的兩端，且分別與氮化鉭層13及五氧化二鉭層14電性連接，其中二電極12可重疊、不重疊或部分重疊於氮化鉭層13與五氧化二鉭層14。在一些實施例中，二電極12可各沿基板11側邊延伸至基板11的下表面，因此基板11上表面的正電極與基板11下表面的背電極相連接。
本發明所採用基板11可以是氧化鋁、氮化鋁或其他氧化金屬材料等精密陶瓷基板，具有良好的散熱性質的基板，但亦可為其他類型的基板。基板11一般設置成矩形，亦可為其他適合的形狀。
在上述實施例中，可更包含一保護層15覆蓋於五氧化二鉭層14上，且該二電極12從該保護層15露出。
於老化測試實驗，在兩個標準大氣壓(atm)、85%相對溼度(RH)及溫度為130℃的環境下放置96小時後，本發明的薄膜電阻層的電阻變化率小於0.05%，相較一般薄膜電阻層的電阻變化率為大於10%或短路，本發明的薄膜電阻層具更穩定的電阻值表現。
綜上所述，本發明的薄膜電阻層係利用磁控濺鍍方法依序形成氮化鉭層及五氧化二鉭層於基板表面上，具有良好的附著性、致密度高、薄膜厚度均勻、沉積速度快及電阻溫度係數低等優點。
10:薄膜電阻
11:基板
12:電極
13:氮化鉭層
14:五氧化二鉭層
15:保護層
16:電阻層
S101~S107:步驟
圖1為本發明薄膜電阻層製備流程圖。
圖2為本發明薄膜電阻的側剖面示意圖。
S101~S107:步驟
Claims (5)
- 一種薄膜電阻層製備方法，包含： 於一腔體內的一基板表面磁控濺鍍一氮化鉭層，其中濺鍍溫度為100-450℃、濺鍍功率為0.25-2.5千瓦及濺鍍時間為5-50分鐘； 於該氮化鉭層表面磁控濺鍍一五氧化二鉭層，以得到一半成品薄膜電阻層，其中濺鍍溫度為100-450℃、濺鍍功率為0.25-2.5千瓦及濺鍍時間為5-50分鐘；以及 將該半成品薄膜電阻層退火處理以得到一薄膜電阻層。
- 如請求項1所述之薄膜電阻層製備方法，其中於該基板表面磁控濺鍍該氮化鉭層步驟前，更包含通入氮氣及非反應性氣體至該腔體，以及於該氮化鉭層表面磁控濺鍍該五氧化二鉭層步驟前，更包含通入氧氣及該非反應性氣體至該腔體。
- 如請求項2所述之薄膜電阻層製備方法，其中氮氣與該非反應性氣體比例為1:4-1:999，以及氧氣與該非反應性氣體比例為1:1.5-1:999。
- 如請求項1所述之薄膜電阻層製備方法，其中退火處理步驟，於溫度為150-750℃環境下，退火5分鐘至24小時。
- 如請求項1所述之薄膜電阻層製備方法，其中該薄膜電阻層的電阻溫度係數為0±3ppm/℃。
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| Application Number | Priority Date | Filing Date | Title |
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| TW109109966A TW202136550A (zh) | 2020-03-25 | 2020-03-25 | 薄膜電阻層製備方法 |
| CN202010533987.9A CN113445012A (zh) | 2020-03-25 | 2020-06-12 | 薄膜电阻层制备方法 |
| US16/929,796 US20210305031A1 (en) | 2020-03-25 | 2020-07-15 | Method for manufacturing thin film resistive layer |
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| US (1) | US20210305031A1 (zh) |
| CN (1) | CN113445012A (zh) |
| TW (1) | TW202136550A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI901323B (zh) * | 2024-08-28 | 2025-10-11 | 國巨股份有限公司 | 電阻器及其製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116043161A (zh) * | 2022-12-28 | 2023-05-02 | 南京南智先进光电集成技术研究院有限公司 | 一种宽元素比的氮化钽薄膜制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2919306B2 (ja) * | 1995-05-31 | 1999-07-12 | 日本電気株式会社 | 低抵抗タンタル薄膜の製造方法及び低抵抗タンタル配線並びに電極 |
| JP2001049430A (ja) * | 1999-08-05 | 2001-02-20 | Victor Co Of Japan Ltd | タンタル系薄膜及びその製造方法 |
| GB2361244B (en) * | 2000-04-14 | 2004-02-11 | Trikon Holdings Ltd | A method of depositing dielectric |
| US7214295B2 (en) * | 2001-04-09 | 2007-05-08 | Vishay Dale Electronics, Inc. | Method for tantalum pentoxide moisture barrier in film resistors |
| TW494559B (en) * | 2001-06-08 | 2002-07-11 | Taiwan Semiconductor Mfg | Method for producing metal-insulator-metal (MIM) capacitor |
| CN104789928A (zh) * | 2014-01-16 | 2015-07-22 | 电子科技大学 | 一种低电阻温度系数、高电阻率氮化钽与钽多层膜的制备方法 |
| TWI540219B (zh) * | 2014-07-04 | 2016-07-01 | shi-long Wei | The Manufacturing Method and Structure of Corrosion Resistant Film Resistors |
-
2020
- 2020-03-25 TW TW109109966A patent/TW202136550A/zh unknown
- 2020-06-12 CN CN202010533987.9A patent/CN113445012A/zh active Pending
- 2020-07-15 US US16/929,796 patent/US20210305031A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI901323B (zh) * | 2024-08-28 | 2025-10-11 | 國巨股份有限公司 | 電阻器及其製造方法 |
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| Publication number | Publication date |
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| CN113445012A (zh) | 2021-09-28 |
| US20210305031A1 (en) | 2021-09-30 |
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