TW202129819A - Method for controlling substrate processing system, and substrate processing system - Google Patents

Abstract

The present invention provides a control method and a substrate processing system of a substrate processing system that can specify a detection point where a notch has been detected. The present invention is a method for controlling a substrate processing system. The substrate processing system includes: a first chamber having a first placement part; a second chamber having a second placement part; and a conveying device that transfers a substrate from the first The first chamber is transported to the second chamber; the first sensor module is installed on the transport path from the first chamber to the second chamber, and has at least three sensors for detecting the position of the outer edge of the substrate And a control unit; the control method of the substrate processing system includes the steps of: transporting the substrate, detecting the position of the outer edge of the substrate by the first sensor module; and determining the detection of the first sensor module Whether the dot is detected in the notch formed in the above-mentioned substrate.

Description

Control method of substrate processing system and substrate processing system

The present invention relates to a control method of a substrate processing system and a substrate processing system.

For example, a transfer arm that transfers a wafer to a processing chamber where the wafer is subjected to required processing such as film formation processing is known. The wafer is provided with a notch such as an orientation plane or a notch that indicates the direction of the crystal axis.

Patent Document 1 discloses a position recognition device that calculates the center position of a semiconductor wafer based on inspection data of a detection member. The detection member includes a plurality of sensors that can detect the edge position of the semiconductor wafer. In addition, Patent Document 2 discloses a conveying system that obtains the deviation of the holding position of the substrate based on a signal indicating the time point of passage of the substrate, and corrects the conveying action of the conveying mechanism based on the deviation of the obtained holding position of the substrate. The substrate is transported to the target position. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-18828 [Patent Document 2] Japanese Patent Laid-Open No. 2013-197454

[The problem to be solved by the invention]

The position recognition device disclosed in Patent Document 1 uses a predetermined wafer radius to determine whether it is a sensor that has detected the orientation plane formed on the wafer, thereby calculating the center position of the wafer. However, the radius of the wafer sometimes changes due to the allowable range of dimensions, expansion due to heat in the process, tension in the film forming process, and so on. Therefore, the method disclosed in Patent Document 1 may not be able to properly identify the sensor that has detected the notch of the wafer. Similarly, the method disclosed in Patent Document 2 may not be able to properly obtain the deviation of the holding position when the radius of the wafer changes.

One aspect of the present invention provides a control method and a substrate processing system of a substrate processing system that can specify a detection point where a notch has been detected. [Technical means to solve the problem]

The substrate processing system of the control method of the substrate processing system according to one aspect of the present invention includes: a first chamber having a first placing part; a second chamber having a second placing part; and a conveying device that transfers the substrate from the above The first chamber is transported to the second chamber; the first sensor module is installed on the transport path from the first chamber to the second chamber, and has at least three sensors for detecting the position of the outer edge of the substrate And a control unit; the control method of the substrate processing system includes the steps of: transporting the substrate, detecting the position of the outer edge of the substrate by the first sensor module; and determining the detection of the first sensor module Whether the dot is detected in the notch formed in the above-mentioned substrate. [Effects of Invention]

According to one aspect of the present invention, a control method and a substrate processing system of a substrate processing system capable of specifying a detection point where a notch has been detected are provided.

Hereinafter, a mode for implementing the present invention will be described with reference to the drawings. In the drawings, the same components are sometimes labeled with the same symbols, and repeated descriptions are omitted.

＜Substrate Processing System＞ Using FIG. 1, an example of the overall configuration of a substrate processing system according to an embodiment will be described. FIG. 1 is a plan view showing the configuration of an example of a substrate processing system according to an embodiment. In addition, in FIG. 1, the wafer W is illustrated with dotted hatching.

The substrate processing system shown in Fig. 1 is a system with a cluster structure (multi-chamber type). The substrate processing system includes: processing chamber PM (Process Module) 1 to 6, transfer chamber VTM (Vacuum Transfer Module), load lock vacuum chamber LLM (Load Lock Module), loader module LM (Loader Module) 1 to 2, Load ports LP (Load Port) 1 to 4 and the control unit 100.

Decompress the processing chambers PM1 to 6 to a predetermined vacuum atmosphere, and perform required processing (etching, film forming, cleaning, ashing) on semiconductor wafer W (hereinafter also referred to as "wafer W") inside it Processing etc.). The processing chambers PM1 to 6 are arranged adjacent to the transfer chamber VTM. The processing chambers PM1 to 6 and the transfer chamber VTM communicate with each other by opening and closing the gate valves GV1 to GV6. The processing chamber PM1 has a mounting part 111 on which the wafer W is mounted. Similarly, the processing chambers PM2 to 6 each have a mounting part on which the wafer W is mounted. Furthermore, the operation of each unit for performing processing in the processing chambers PM1 to 6 is controlled by the control unit 100.

Decompress the transfer chamber VTM to a specified vacuum atmosphere. In addition, inside the transfer chamber VTM, a transfer device ARM1 for transferring the wafer W is provided. The transfer device ARM1 carries in and out the wafer W between the processing chamber PM1 to PM6 and the transfer chamber VTM according to the opening and closing of the gate valves GV1 to GV6. In addition, the transfer device ARM1 carries in and out the wafer W between the load lock vacuum chamber LLM and the transfer chamber VTM in accordance with the opening and closing of the gate valve GV7. In addition, the operation of the conveying device ARM1 and the opening and closing of the gate valves GV1 to GV7 are controlled by the control unit 100.

The conveying device ARM1 is configured as a multi-articulated arm provided with a base, a first link, a second link, and an end effector 124, for example. Furthermore, in FIG. 1, the end effector 124 of the conveying device ARM1 is illustrated, and other illustrations are omitted. The end effector 124 is provided with a holding portion for holding the wafer W on the head end side. Furthermore, the actuator that drives the conveying device ARM1 is controlled by the control unit 100.

In addition, sensor modules S1-7 for detecting the wafer W are arranged inside the transfer chamber VTM. The sensor module S1 detects whether the wafer W is held and the amount of eccentricity of the held wafer W when the transfer device ARM1 carries the wafer W into or out of the processing chamber PM1. Furthermore, the detection method of the sensor module S1 will be described later using FIG. 2 and so on. Similarly, the sensor modules S2-6 detect whether the wafer W is held and the wafer W is held and the wafer W is held and when the wafer W is transported into the processing chamber PM2-6 or when it is removed from the processing chamber PM2-6. The amount of eccentricity of circle W. The sensor module S7 detects whether the wafer W is held and the wafer W is held when the wafer W is loaded into the load lock chamber LLM or removed from the load lock chamber LLM by the transfer device ARM1 The amount of eccentricity. Furthermore, the sensing method of the sensor module S7 will be described later using FIG. 3 and so on. The sensor modules S1-7 may use optical pass sensors, for example. The detection values of the sensor modules S1 to 7 are input to the control unit 100.

The load lock vacuum chamber LLM is arranged between the transfer chamber VTM and the carrier modules LM1~2. The load lock vacuum chamber LLM can switch the atmosphere and vacuum atmosphere. The load lock vacuum chamber LLM and the vacuum atmosphere transfer chamber VTM are connected by opening and closing the gate valve GV7. The load lock vacuum chamber LLM and the carrier module LM1 of the atmospheric atmosphere are connected by opening and closing the gate valve GV8. The load lock vacuum chamber LLM and the carrier module LM2 of the atmospheric atmosphere are connected by opening and closing the gate valve GV9. The load lock vacuum chamber LLM has a mounting portion 131 on which the wafer W is mounted. Furthermore, the switching of the vacuum atmosphere or the atmospheric atmosphere in the load lock vacuum chamber LLM is controlled by the control unit 100.

The carrier modules LM1~2 have an atmospheric atmosphere, for example, a downflow of clean air is formed. In addition, inside the carrier module LM1, a transport device ARM2 for transporting the wafer W is provided. The transfer device ARM2 carries in and out the wafer W between the load lock vacuum chamber LLM and the carrier module LM1 according to the opening and closing of the gate valve GV8. Similarly, inside the carrier module LM2, a transport device ARM3 for transporting the wafer W is provided. The transfer device ARM3 carries in and out the wafer W between the load lock vacuum chamber LLM and the carrier module LM2 according to the opening and closing of the gate valve GV9. In addition, the operation of the conveying devices ARM2, 3 and the opening and closing of the gate valves GV8, 9 are controlled by the control unit 100.

The conveying device ARM2 is configured as a multi-articulated arm including a base, a first link, a second link, and an end effector 144, for example. Furthermore, in FIG. 1, the end effector 144 of the conveying device ARM2 is illustrated, and other illustrations are omitted. The end effector 144 is provided with a holding portion for holding the wafer W on the head end side. Furthermore, the actuator that drives the conveying device ARM2 is controlled by the control unit 100. The conveying device ARM3 is configured as a multi-joint arm which is the same as the conveying device ARM2.

Load ports LP1 and 2 are provided on the wall surface of the carrier module LM1. In addition, load ports LP3 and 4 are provided on the wall surface of the carrier module LM2. The load ports LP1 to 4 are equipped with a carrier C or an empty carrier C accommodating the wafer W. As the carrier C, for example, FOUP (Front Opening Unified Pod) or the like can be used.

The transfer device ARM2 can take out the wafer W accommodated in the load ports LP1 and 2 by the holding part of the transfer device ARM2. In addition, the wafer W held in the holding portion can be accommodated in the load ports LP1 and 2. Similarly, the transfer device ARM3 can take out the wafer W accommodated in the load ports LP3 and 4 by being held by the holding part of the transfer device ARM3. In addition, the wafer W held in the holding portion can be accommodated in the load ports LP3 and 4.

The control unit 100 has a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), and HDD (Hard Disk Drive) ). The control unit 100 may also have other memory areas such as SSD (Solid State Drive) and is not limited to HDD. In the memory area such as HDD, RAM, etc., there are stored recipes that set the process sequence, process conditions, and transport conditions.

The CPU controls the processing of the wafer W in each processing chamber PM according to the recipe, and controls the transportation of the wafer W. A program for executing the processing of the wafer W and the transfer of the wafer W in each processing chamber PM can be stored in the HDD or RAM. The program can be provided by storing it in a memory medium, or by providing it from an external device via the network.

＜The operation of substrate processing system＞ Next, an example of the operation of the substrate processing system will be described. Here, as an example of the operation of the substrate processing system, the following operations are described: in the processing chamber PM1, the wafer W accommodated in the carrier C installed in the load port LP1 is processed, and the wafer W is accommodated in the load. In the empty vehicle C of port LP3. Furthermore, at the beginning of the operation, the gate valves GV1-9 are closed, and the load lock vacuum chamber LLM is filled with atmospheric air.

The control unit 100 opens the gate valve GV8. The control unit 100 controls the transport device ARM2 to take out the wafer W from the carrier C of the load port LP1 and place it on the mounting unit 131 of the load lock vacuum chamber LLM. When the wafer W is placed on the placement portion 131 of the load lock vacuum chamber LLM and the transfer device ARM2 is retracted from the load lock vacuum chamber LLM, the control portion 100 closes the gate valve GV8.

The control unit 100 controls the exhaust device (not shown) of the load lock vacuum chamber LLM to exhaust the air in the chamber, and switches the load lock vacuum chamber LLM from an atmospheric atmosphere to a vacuum atmosphere.

Next, as shown by the path 151, the wafer W placed on the placement section 131 of the load lock vacuum chamber LLM is transferred to the processing chamber PM1 and placed on the placement section 111. Specifically, the control unit 100 opens the gate valve GV7. The control unit 100 controls the transfer device ARM1 to insert the end effector 124 into the load lock vacuum chamber LLM until it reaches the preset teaching point, maintains the wafer W placed on the loading part 131 of the load lock vacuum chamber LLM, and sends it to the transfer chamber VTM transport. Furthermore, as described below with reference to FIG. 4, when the wafer W is transferred from the load lock vacuum chamber LLM to the transfer chamber VTM, the sensor module S7 is used to calculate the radius of the wafer W. When the end effector 124 retreats from the load lock vacuum chamber LLM, the control unit 100 closes the gate valve GV7.

The control unit 100 opens the gate valve GV1. The control unit 100 controls the transfer device ARM1 to insert the end effector 124 into the processing chamber PM1 until it reaches a preset teaching point, and mounts the held wafer W on the mounting portion 111 of the processing chamber PM1. Furthermore, as described below with reference to FIG. 6, when the wafer W is transferred from the transfer chamber VTM to the processing chamber PM1, the sensor module S1 is used to calculate the center position of the wafer W. The control unit 100 controls the transfer device ARM1 to adjust the position of the wafer W based on the calculated center position of the wafer W. When the end effector 124 retreats from the processing chamber PM1, the control unit 100 closes the gate valve GV1.

The control unit 100 controls the processing chamber PM1 to perform required processing on the wafer W.

When the processing of the wafer W is completed, as indicated by the path 152, the wafer W placed on the placement section 111 of the process chamber PM1 is transferred to the load lock vacuum chamber LLM and placed on the placement section 131. Specifically, the control unit 100 opens the gate valve GV1. The control unit 100 controls the transfer device ARM1 to insert the end effector 124 into the processing chamber PM1 until it reaches a preset teaching point, holds the wafer W placed on the placing portion 111 of the processing chamber PM1, and transfers it to the transfer chamber VTM. When the end effector 124 retreats from the processing chamber PM1, the control unit 100 closes the gate valve GV1.

The control unit 100 opens the gate valve GV7. The control unit 100 controls the transfer device ARM1 to insert the end effector 124 into the load lock vacuum chamber LLM until it reaches a preset teaching point, and places the held wafer W on the mounting portion 131 of the load lock vacuum chamber LLM. When the end effector 124 retreats from the load lock vacuum chamber LLM, the control unit 100 closes the gate valve GV7.

The control unit 100 controls the air intake device (not shown) of the load lock vacuum chamber LLM to supply, for example, clean air into the room, and switches the load lock vacuum chamber LLM from a vacuum atmosphere to an atmospheric atmosphere.

The control unit 100 opens the gate valve GV9. The control unit 100 controls the transfer device ARM3 to take out the wafer W placed on the placement portion 131 of the load lock vacuum chamber LLM and accommodate it in the carrier C of the load port LP3. When the wafer W is taken out from the placement part 131 of the load lock vacuum chamber LLM and the transport device ARM3 is retracted from the load lock vacuum chamber LLM, the control part 100 closes the gate valve GV9.

In the above, the example in which the wafer W is transferred to and out of the processing chamber PM1 has been described, but the wafer W may be transferred to and out of the processing chambers PM2 to PM2 to 6 in the same manner.

＜Wafer center position detection＞ Next, using FIGS. 2 and 3, the sensor modules S1-7 are further described.

FIG. 2 is an example of a schematic diagram illustrating the structure of the sensor module S1 and the detection method of the sensor module S1. The sensor module S1 has two sensors 11 and 12. Hereinafter, the sensor module S1 with two sensors 11 and 12 is also referred to as a "2-sensor sensor module". The sensors 11 and 12 are, for example, optical pass sensors that detect the edge of the wafer W passing above when the wafer W is transferred from the transfer chamber VTM to the processing chamber PM1 or from the processing chamber PM1 to the transfer chamber VTM. The sensors 11 and 12 are arranged at predetermined intervals. In addition, the sensors 11 and 12 may be arranged on the opposite side with respect to the reference line 10. In addition, the sensors 11 and 12 may be arranged symmetrically with respect to the reference line 10. The reference line 10 is, for example, a line that passes through the center of the placement portion 111 of the processing chamber PM1 and extends in the direction in which the wafer W is transported by the transport device ARM1.

In FIG. 2, the position of the detection point 21 is detected by the sensor 11 by transporting the wafer W upward along the reference line 10. In addition, the position of the detection point 22 is detected by the sensor 12. By further transporting the wafer W, the position of the detection point 23 is detected by the sensor 11. In addition, the position of the detection point 24 is detected by the sensor 12. The detection value of the sensor module S1 is input to the control unit 100. The control unit 100 calculates the center position of the wafer W based on the posture of the conveying device ARM1 (position and speed of the end effector 124) and the detection value of the sensor module S1.

FIG. 3 is an example of a schematic diagram illustrating the structure of the sensor module S7 and the detection method of the sensor module S7. The sensor module S7 has three sensors 31-33. Hereinafter, the sensor module S7 having three sensors 31 to 33 is also referred to as a "3-sensor type sensor module". The sensors 31 to 33 are, for example, optical pass sensors that detect the wafer W passing through the upper crystal when transporting the wafer W from the transfer chamber VTM to the load lock vacuum chamber LLM or from the load lock vacuum chamber LLM to the transfer chamber VTM. The edge of circle W. The sensors 31 to 33 are arranged at predetermined intervals. In addition, the sensors 31 and 32 may be arranged on the opposite side with respect to the reference line 30. In addition, the sensors 31 and 32 may be arranged symmetrically with respect to the reference line 30. The reference line 30 is, for example, a line that passes through the center of the placement portion 131 of the load lock vacuum chamber LLM and extends in the direction in which the wafer W is transported by the transport device ARM1.

In addition, the sensor 33 and the sensor 32 are arranged at a distance greater than or equal to the opening width of the notch 50. Furthermore, in FIG. 3, the sensor 33 is shown to be disposed between the sensor 31 and the sensor 32, but the sensor 33 is not limited to this, and can also be disposed between the sensor 31 and the sensor. The space between the detectors 32 is further outside.

In FIG. 3, by transporting the wafer W upward along the reference line 30, the position of the detection point 41 is detected by the sensor 31. In addition, the position of the detection point 42 is detected by the sensor 32. In addition, the position of the detection point 45 is detected by the sensor 33. By further transporting the wafer W, the position of the detection point 43 is detected by the sensor 31. In addition, the position of the detection point 44 is detected by the sensor 32. In addition, the position of the detection point 46 is detected by the sensor 33. The detection value of the sensor module S7 is input to the control unit 100. The control unit 100 calculates the radius of the wafer W and the center position of the wafer W based on the posture of the conveying device ARM1 (position and speed of the end effector 124) and the detection value of the sensor module S7.

The control unit 100 calculates the circle outside the triangle based on the imaginary triangle of the detection point, thereby estimating the radius of the wafer W and the center position of the wafer W. Here, in the wafer W, a notch 50 is provided to indicate the direction of the crystal axis. When the sensor (11-12, 31-33) detects the edge (detection point 22 in the example of FIG. 2 and detection point 42 in the example of FIG. 3) at the position where the notch 50 is formed , According to the triangle containing the detection point (for example, in the example of Figure 2, it is the triangle formed by the detection points 21, 22, 23, and in the example of Figure 3, it is the triangle formed by the detection points 41, 42, 43 Constitutive triangle) The estimated center position of the wafer W may be misaligned with the actual center position of the wafer W.

FIG. 4 is a flowchart showing an example of the process of calculating the radius of the wafer W based on the detection value of the sensor module S7.

In step S101, the control unit 100 obtains six detection points 41 to 46 from the sensor module S7 (refer to FIG. 3). Specifically, the control unit 100 controls the transfer device ARM1 to transfer the wafer W from the load lock vacuum chamber LLM to the transfer chamber VTM. At this time, the wafer W passes through the sensor module S7, thereby detecting the detection points 41 to 46.

In step S102, the control unit 100 forms a plurality of triangles based on the six detection points 41 to 46. Here, at least 4 triangles are formed. In the following description, the formed four triangles are also referred to as triangles T1 to T4.

In step S103, the control unit 100 respectively calculates the circumscribed circle radius and the circumscribed circle center of the triangles T1 to T4 formed in step S102.

In step S104, the control unit 100 calculates the average value of the circumscribed circle radius based on the circumscribed circle radius of each triangle T1 to T4 calculated in step S103.

In step S105, the control unit 100 determines whether the detection points 41 to 46 are detected at the position where the notch 50 is formed.

Here, it is determined whether the deviation of the center of the outer circle of each triangle T1 to T4 calculated in step S103 falls within the range of placement accuracy. The placement accuracy is a value indicating how much displacement from the standard position is allowed when the wafer W is placed on the placement portion 111. When the deviation from the center of the circumscribed circle falls within the range of the placement accuracy, it is determined that the detection points 41 to 46 are not detected at the position where the notch 50 is formed. When the deviation from the center of the circumscribed circle does not fall within the range of the placement accuracy, it is determined that any one of the detection points 41 to 46 is detected at the position where the notch 50 is formed.

When the detection points 41 to 46 are detected at the position where the notch 50 is formed (S105·Yes), the processing of the control unit 100 proceeds to step S108. When the detection points 41 to 46 are not detected at the position where the notch 50 is formed (S105, No), the processing of the control unit 100 proceeds to step S106.

In step S106, the control unit 100 determines that the detection points 41 to 46 are not detected at the position where the notch 50 is formed.

In step S107, the control unit 100 calculates the radius of the wafer W. Here, the radius of the wafer W is calculated based on the detection points 41 to 46 (or points selected from the detection points 41 to 46). For example, the average radius of the outer circle of each triangle T1 to T4 can be used as the radius of the wafer W. It is also possible to select any circumscribed circle radius among the circumscribed circle radii of the triangles T1 to T4 as the radius of the wafer W. Then, the processing of the control unit 100 ends.

In step S108, the control unit 100 compares the size relationship between the outer radius of each triangle T1 to T4 calculated in step S103 and the average value of the outer radius calculated in step S104, and generates a judgment result graph. In the following description, the case where the circumscribed circle radius is greater than the average value is indicated by "○", and the case where the circumscribed circle radius is smaller than the average value is indicated by "×". For example, when the radius of the outer circle of the triangle T1 is greater than the average, the radius of the outer circle of the triangle T2 is smaller than the average, the radius of the outer circle of the triangle T3 is larger than the average, and the radius of the outer circle of the triangle T4 is smaller than the average value, "○×" ○×" Judgment result graph.

In step S109, the control unit 100 determines which is consistent with the determination result pattern generated in step S108 based on the table stored in the control unit 100 in advance.

Figure 5 is an example of the table. In the table, the judgment result patterns of the triangles T1 to T4 when the detection points 41 to 46 are the detection points at the positions where the notches 50 are formed are correspondingly stored. For example, when the detection point 41 is the detection point at the position where the notch 50 is formed, a judgment result pattern of "○×○×" is stored. When the detection point 42 is the detection point at the position where the notch 50 is formed, a judgment result pattern of "×○××" is memorized. When the detection point 43 is the detection point at the position where the notch 50 is formed, a judgment result pattern of "×○×○" is memorized.

Here, among the 20 types of triangles formed by 6 detection points 41 to 46, the triangles T1 to T4 are set so that the determination result pattern corresponding to each detection point 41 to 46 becomes unique.

In addition, among the 20 types of triangles formed by the 6 detection points 41 to 46, for the case where a certain triangle and other triangles become the same size figure, any one of these triangles can be used to create a table. In this case, triangles whose shapes have become narrower (for example, triangles composed of detection points 42, 45 and other detection points, triangles composed of detection points 44, 46 and other detection points, etc.) can be excluded. In this way, the three detection points can be separated from each other, and the error of the calculated circumscribed circle radius and circumscribed circle center can be reduced.

For example, when a determination result pattern of "○×○×" is generated in step S108, it is determined in step S109 that the detection point 41 matches the determination result pattern according to the table, and the processing of the control unit 100 proceeds to step S110. Furthermore, when the judgment result graph generated in step S108 is inconsistent with the content in the table, it is deemed that the condition is not met, and the processing of the control unit 100 proceeds to step S110.

In step S110, the control unit 100 determines whether there is a determination result pattern that matches the table. When there is no judgment result pattern that matches the table (S110·No), the processing of the control unit 100 proceeds to step S106, and it is judged that the detection points 41 to 46 are not detected at the position where the notch 50 is formed. When there is a judgment result pattern that matches the table (S110·Yes), the processing of the control unit 100 proceeds to step S111, and it is specified that the detection point determined in step S109 (here, detection point 41) is formed with a notch 50's position.

In step S112, after excluding the detection points at the position where the notch 50 is formed specified in step S111, the radius of the wafer W is calculated. Here, the radius of the wafer W is calculated based on the inspection points 42 to 46 (or points selected from the inspection points 42 to 46). For example, the average radius of the outer circle of each triangle that does not include the detection point 41 may be used as the radius of the wafer W. It is also possible to select any circumscribed circle radius among the circumscribed circle radii of each triangle excluding the detection point 41 as the radius of the wafer W. Then, the processing of the control unit 100 ends.

FIG. 6 is a flowchart showing an example of the process of calculating the center position of the wafer W based on the detection value of the sensor module S1.

In step S201, the control unit 100 obtains four detection points 21-24 from the sensor module S1 (refer to FIG. 2). Specifically, the control unit 100 controls the transfer device ARM1 to transfer the wafer W from the transfer chamber VTM to the processing chamber PM1. At this time, the wafer W passes through the sensor module S1, thereby detecting the detection points 21-24.

In step S202, the control unit 100 forms a plurality of triangles based on the four detection points 21-24. Here, 4 triangles are formed.

In step S203, the control unit 100 respectively calculates the circumscribed circle radius and the circumscribed circle center of each triangle formed in step S202.

In step S204, the control unit 100 determines whether the deviation of the center of the outer circle of each triangle calculated in step S203 falls within the range of placement accuracy. When the deviation from the center of the circumscribed circle falls within the range of the placement accuracy (S204·Yes), the processing of the control unit 100 proceeds to step S205. When the deviation from the center of the circumscribed circle does not fall within the range of the placement accuracy (S204, No), the processing of the control unit 100 proceeds to step S207.

In step S205, the control unit 100 determines that the detection points 21 to 24 are not detected at the positions where the notches 50 are formed.

In step S206, the control unit 100 calculates the radius of the wafer W and the center position of the wafer W. Here, the center position of the wafer W is calculated based on the inspection points 21-24 (or points selected from the inspection points 21-24). For example, the average position of the center of the circle outside each triangle can be taken as the center position of the wafer W. It is also possible to select any circumscribed center of the circumscribed circle center of each triangle as the center position of the wafer W. Thereby, the error between the calculated center position of the wafer W and the actual center position of the wafer W can be within the range of the placement accuracy. Then, the processing of the control unit 100 ends.

In step S207, the control unit 100 determines whether the radius of each triangle outer circle can be regarded as the same value as the radius of the wafer W calculated by the process shown in FIG. 4 whether there is one outer circle. Here, the so-called same value refers to those that can be regarded as the same value under the calculation accuracy. When it can be considered that there is one outer circle with the same value as the radius of the wafer W (S207·Yes), the processing of the control unit 100 proceeds to step S208. When it can be considered that there is not one outer circle with the same value as the radius of the wafer W (S207, No), the processing of the control unit 100 proceeds to step S210. Furthermore, when the radius of the wafer W that should be referred to cannot be calculated, the control unit 100 determines step S207·No, and the processing of the control unit 100 proceeds to step S210.

In step S208, the control unit 100 identifies the detection points of the detection points 21-24 that are not used as an outer circle with the same value as the radius of the wafer W as the detection point at the position where the notch 50 is formed.

In step S209, the center position of the wafer W is calculated after the detection point at the position where the notch 50 is formed specified in step S208 is excluded. That is, the center of the outer circle that can be regarded as the same value as the radius of the wafer W is calculated as the center position of the wafer W. Then, the processing of the control unit 100 ends.

In step S210, the control unit 100 withdraws the wafer W from the processing chamber PM1, and after the shift, makes it enter the processing chamber PM1 again. The offset here is set to be greater than the opening width of the notch 50. Thereby, when the wafer W enters the processing chamber PM1 again, the notch 50 can be prevented from passing over the sensors 11 and 12 again. Then, the processing of the control unit 100 returns to step S201. Thereby, the position of the outer edge of the wafer W can be detected at the position where the notch 50 is not formed.

As described above, according to the substrate processing system of one embodiment, in the system that transfers the wafer W between the load lock vacuum chamber LLM and the processing chambers PM1 to 6 through the transfer chamber VTM, the placement accuracy can be improved.

Here, the detection method of the center position of the wafer W in the substrate processing system of the reference example will be described. In the inspection method of the substrate processing system of the reference example, triangles are formed based on 4 inspection points, and it is determined whether the radius R of the outer circumference of each triangle is within the predetermined radius of the wafer W, thereby, The detection point at the position of the notch 50 is determined. However, the radius of the wafer W must allow a certain degree of dimensional difference (for example, 300±0.2 mm), and it is difficult to balance the tolerance of the radius of the wafer W with the detection accuracy (placement accuracy) of the center position of the wafer W.

In contrast, in the substrate processing system of this embodiment, even if the radius size of the wafer W is not given in advance, and even if the radius size of each wafer W is different, the wafer W can be obtained with high accuracy. The center position can improve the placement accuracy when the wafer W is placed on the placement section 111 of each processing chamber PM1 to PM6.

In addition, in the substrate processing system of this embodiment, the wafer W is transferred from the load lock vacuum chamber LLM to the processing chambers PM1 to 6, and the processed wafer W is transferred from the processing chambers PM1 to 6 to the load cell. Lock the vacuum chamber LLM. The 3-sensor type sensor module (refer to Fig. 3) can be used for the sensor module S7 that each conveying path passes through, and the 2-sensor type sensor module (refer to Fig. 2) can be used for the sensor module S7. The sensor modules S1-6 of each processing chamber PM1-6, therefore, can reduce the number of sensors and reduce the cost of the substrate processing system.

Next, an example of the overall configuration of a substrate processing system according to another embodiment will be described using FIG. 7. FIG. 7 is a plan view showing the configuration of an example of a substrate processing system according to another embodiment. In addition, in FIG. 7, the wafer W is shown with dotted hatching.

The substrate processing system shown in Fig. 7 is the same as the substrate processing system shown in Fig. 1 in a cluster structure. It includes processing chambers PM1~6, transfer chamber VTM, load lock vacuum chamber LLM, and carrier modules LM1~2. Load ports LP1 to 4 and the control unit 100.

Here, the substrate processing system shown in FIG. 7 is compared with the substrate processing system shown in FIG. ) Is different. Furthermore, the structure of the sensor module S1 is the same as the structure of the sensor module S7 shown in FIG. 3, and the repeated description is omitted.

Furthermore, in the substrate processing system shown in FIG. 7, the wafer W is continuously transported as shown by the paths 153 to 155 of the wafer W. Here, in each of the paths 153 to 155 that transport the wafer W from one chamber to the other chamber through the transfer chamber VTM, at least one of the three-sensor type sensor modules is arranged (see FIG. 3).

As shown by the path 153, the wafer W placed on the placement section 131 of the load lock vacuum chamber LLM is transferred to the processing chamber PM1, and placed on the placement section 111 of the processing chamber PM1. Here, when the wafer W passes through the sensor module S7, the radius of the wafer W is calculated based on the flow shown in FIG. 4. In addition, when the wafer W passes through the sensor module S1, the center position of the wafer W is calculated based on the flow shown in FIG. 6. Based on the calculated center position of the wafer W, the placement position of the wafer W is adjusted.

In the processing chamber PM1, the required first processing is performed on the wafer W. Furthermore, since the first process is performed on the wafer W, the radius of the wafer W may sometimes change due to expansion due to heat during the process, tension during the film forming process, and the like.

When the first processing of the wafer W is completed, as shown by the path 154, the wafer W placed on the placement section 111 of the process chamber PM1 is transferred to the process chamber PM2 and placed on the placement section of the process chamber PM2. Here, when the wafer W passes through the sensor module S1, the radius of the wafer W is calculated based on the flow shown in FIG. 4. In addition, when the wafer W passes through the sensor module S2, the center position of the wafer W is calculated based on the flow shown in FIG. 6. Based on the calculated center position of the wafer W, the placement position of the wafer W is adjusted.

In the processing chamber PM2, the required second processing is performed on the wafer W.

When the second processing of the wafer W is completed, as indicated by the path 155, the wafer W placed on the placement section of the process chamber PM2 is transferred to the load lock vacuum chamber LLM and placed on the placement section 131. Here, when the wafer W passes through the sensor module S7, the radius and center position of the wafer W are calculated based on the flow shown in FIG. 4. Based on the calculated center position of the wafer W, the placement position of the wafer W is adjusted.

As described above, according to the substrate processing system of another embodiment, even if the radius size of the wafer W is not given in advance, even if the radius size of each wafer W is different, the center position of the wafer W can be obtained with high accuracy. , The placement accuracy when placing the wafer W on the placement section 111 of the processing chamber PM1 can be improved.

In addition, according to the substrate processing system of another embodiment, in the continuous transport configuration, even if the radius size of the wafer W is changed due to the required processing on the wafer W in the processing chamber PM1, it can be highly accurate Finding the center position of the processed wafer W can improve the placement accuracy when placing the processed wafer W on the placement portion 111 of the next processing chamber PM2.

Furthermore, in the example of FIG. 7, the sensor modules S3-6 are shown as 2-sensor type sensor modules (refer to FIG. 2), but for the sensor modules S3-6, It is also possible to arrange at least one or more 3-sensor sensor modules on each path of the wafer W (refer to FIG. 3).

Furthermore, the explanation is that on the path 153, the radius of the wafer W is calculated when the wafer W passes through the sensor module S7, and the radius of the wafer W is calculated when the wafer W passes through the sensor module S1. Central location, but not limited to this. It may also be configured as follows: on the path 153, when the wafer W passes through the sensor module S1, the radius and the center position of the wafer W are calculated based on the flow shown in FIG. 4. In this configuration, in step S107 or step S112, the control unit 100 calculates the radius of the wafer W and calculates the center position of the wafer W. When the center position of the wafer W is calculated in step S107, the radius of the wafer W and the center position of the wafer W are calculated based on the inspection points 41 to 46 (or points selected from the inspection points 41 to 46). For example, the average position of the center of the circle outside the triangles T1 to T4 may also be used as the center position of the wafer W. It is also possible to select any circumscribed circle center of the circumscribed circle centers of the triangles T1 to T4 as the center position of the wafer W. In addition, when the center position of the wafer W is calculated in step S112, the inspection point (here, the inspection point 41) at the position where the notch 50 is formed specified in step S111 is excluded, and the wafer W is calculated The radius and the center position of the wafer W. That is, based on the detection points 42 to 46 (or points selected from the detection points 42 to 46), the radius of the wafer W and the center position of the wafer W are calculated. For example, the average position of the center of the circle outside each triangle that does not include the detection point 41 may be used as the center position of the wafer W. It is also possible to select any circumscribed circle center among the circumscribed circle centers of the triangles that do not include the detection point 41 as the center position of the wafer W.

In addition, the sensor module S1 can also be set as a 3-sensor type sensor module (refer to Figure 3), and the sensor modules S2 and S7 may be set as a 2-sensor type sensor module. (Refer to Figure 2). With the sensor module S1 installed in the path 153, the radius and center position of the wafer W can be obtained with high accuracy, which can improve the placement of the wafer W on the placement section 111 of the processing chamber PM1 Accuracy. In addition, the radius of the wafer W can be obtained with high accuracy by the sensor module S1 installed on the path 154, and the radius of the wafer W can be obtained with high accuracy by the sensor module S2 installed on the path 154. The center position of the circle W can improve the placement accuracy when the wafer W is placed on the placement portion 111 of the processing chamber PM2.

Furthermore, on the path 155, two-sensor type sensor modules S2 and S7 are arranged. When the wafer W is placed on the placement portion 131 of the load lock vacuum chamber LLM, when the wafer W passes through the sensor module S7, the center position of the wafer W is calculated based on the flow shown in FIG. 6. Here, when the wafer W is placed on the placement section 131 of the load lock vacuum chamber LLM, it is not required to place the wafer W on the placement section 111 of the processing chamber PM1 and 2 at a high level. Accuracy. That is, in the flow shown in FIG. 6, the allowable range of placement accuracy in step S204 becomes larger. Thereby, even if the control is performed based on the center position (S206) of the wafer W calculated by the 2-sensor type sensor module (refer to FIG. 2), the wafer can be mounted with the required mounting accuracy. Round W. Furthermore, in step S204, when the deviation of the center of the circumscribed circle does not fall within the range of the placement accuracy (S204·No), the processing of the control unit 100 proceeds to step S207. In this case, the radius of the wafer W that should be referred to cannot be calculated, so the control unit 100 determines step S207·No, and the processing of the control unit 100 proceeds to step S210.

Next, using FIG. 8, an example of the overall configuration of a substrate processing system according to another embodiment will be described. FIG. 8 is a plan view showing the configuration of an example of a substrate processing system according to another embodiment. In addition, in FIG. 8, the wafer W is illustrated with dotted hatching.

The substrate processing system shown in Fig. 8 is the same as the substrate processing system shown in Fig. 1 in a cluster structure. It includes processing chambers PM1~6, transfer chamber VTM, load lock vacuum chamber LLM, and carrier modules LM1~2. Load ports LP1 to 4 and the control unit 100.

The processing chamber PM1 has mounting portions 111 to 114 on which a total of 4 wafers W are mounted in a 2×2 row in a plan view. Similarly, the processing chambers PM2 to 6 each have a mounting portion on which 4 wafers W are mounted. The load lock vacuum chamber LLM has mounting portions 131 to 134 in which a total of 4 wafers W are mounted in a row of 2×2 rows in a plan view. In addition, the placement of the placement parts 111 to 114 of the processing chambers PM1 to 6 is the same as the placement of the placement parts 131 to 134 of the load lock vacuum chamber LLM.

The transport device ARM1 is configured as a multi-articulated arm provided with a base 121, a first link 122, a second link 123, and an end effector 124. One end side of the first link 122 is rotatably attached to the base 121 as a rotation axis in the up-down direction. In addition, the base 121 can raise and lower the first link 122 in the vertical direction. One end side of the second link 123 is rotatably mounted with respect to the other end side of the first link 122 in the vertical direction as a rotation axis. The base end side of the end effector 124 is rotatably mounted with respect to the other end side of the second link 123 in the up-down direction as a rotation axis. A plurality of holding parts for holding the wafer W are provided on the head end side of the end effector 124. Actuation of the lifting of the first link 122, the joints of the base 121 and the first link 122, the joints of the first link 122 and the second link 123, and the joints of the second link 123 and the end effector 124 The device is controlled by the control unit 100.

The end effector 124 is formed in a fork shape branched on the head end side, and has a base end 240 and two plates (fork branch parts) 241 and 242 extending from the base end 240. The plates 241 and 242 extend in the same direction from the base end 240 and are formed to have the same height. The plate 241 has holding portions 243 and 244 for holding a plurality of wafers W along the longitudinal direction of the plate 241. The plate 242 has holding portions 245 and 246 for holding a plurality of wafers W along the longitudinal direction of the plate 242. In this way, the four wafers W held by the end effector 124 are held at the same height (on the same plane).

The sensor modules S1 to S7 are provided in two groups corresponding to the two plates 241 and 242.

In the substrate processing system shown in FIG. 8, the wafer W is transferred from the load lock vacuum chamber LLM to the processing chambers PM1 to 6 and processed, and then transferred from the processing chambers PM1 to 6 to the load lock vacuum chamber LLM. Therefore, the sensor module S7 is a sensor module with three sensors 31-33. Furthermore, in the continuous transport configuration, for the sensor modules S1 to 6, it is also possible to arrange at least 3 sensor-type sensor modules (refer to FIG. 3) on each path of the wafer W At least one way is to configure a 3-sensor sensor module (refer to Figure 3).

The wafer W placed on the placement sections 131 to 134 of the load lock vacuum chamber LLM is transferred to the processing chamber PM1 and placed on the placement sections 111 to 114 of the processing chamber PM1. Here, when the wafer W passes through the sensor module S7, the radius of each wafer W is calculated based on the flow shown in FIG. 4. In addition, when the wafer W passes through the sensor module S1, the center position of each wafer W is calculated based on the flow shown in FIG. 6. Based on the calculated center position of each wafer W, the transfer device ARM1 is controlled to adjust the placement position of the wafer W.

The process shown in FIG. 4 is to process each wafer W one by one. The process shown in FIG. 6 basically processes each wafer W one by one. Here, when the center positions of the first to third wafers W among the four wafers W are calculated (S206 or S209), and the fourth wafer W is judged as S207·No, the wafer W is shifted Insert it later. In this way, the center position of the fourth wafer W is calculated (S206 or S209). At this time, the positional relationship between the notch 50 of the first wafer W and the sensor module S1 also changes, so there is a possibility that the first wafer W will be judged as S207·No next time.

In this case, the offset and reentry can be repeated again and again, and this operation is repeated until the center position of the 4 wafers W is calculated. In addition, the center position of the first wafer W determined as S207·No due to the offset may be the center position calculated before the offset. In this way, the number of redoing can be reduced.

10, 30: baseline 11, 12, 31, 32, 33: sensor 21, 22, 23, 24, 41, 42, 43, 44, 45, 46: detection point 50: Notch (notch part) 100: Control Department 111, 112, 113, 114: Placement part (1st placement part, 2nd placement part) 121: Abutment 122: 1st link 123: 2nd link 124: End Effector 131, 132, 133, 134: Placement section (1st placement section, 2nd placement section) 144: End Effector 151, 152, 153, 154, 155: route (transport route) 240: Base end 241, 242: Plate 243, 244: holding part 245, 246: holding part ARM1: Conveying device ARM2: Conveying device ARM3: Conveying device C: Vehicle GV1, GV2, GV3, GV4, GV5, GV6, GV7: gate valve GV8: Gate valve GV9: Gate valve LLM: Load lock vacuum chamber LM1, LM2: Carrier module LP1, LP2, LP3, LP4: Load port PM1, PM2, PM3, PM4, PM5, PM6: processing room (room 1 and room 2) S1, S2, S3, S4, S5, S6, S7: sensor module (board sensing part) VTM: transfer room (room 1 and room 2) W: Wafer

FIG. 1 is a plan view showing the configuration of an example of a substrate processing system according to an embodiment. Fig. 2 is an example of a schematic diagram explaining the structure and detection method of the sensor module. Fig. 3 is an example of a schematic diagram illustrating the structure and detection methods of the sensor module. FIG. 4 is a flowchart showing an example of processing for calculating the radius of the wafer. Figure 5 is an example of the table. FIG. 6 is a flowchart showing an example of processing for calculating the center position of the wafer. FIG. 7 is a plan view showing the configuration of an example of a substrate processing system according to another embodiment. FIG. 8 is a plan view showing the configuration of an example of a substrate processing system according to another embodiment.

100: Control Department

111: Placement Department

124: End Effector

131: Placement Department

144: End Effector

151: Path

152: Path

ARM1: Conveying device

ARM2: Conveying device

ARM3: Conveying device

C: Vehicle

GV1, GV2, GV3, GV4, GV5, GV6, GV7: gate valve

GV8: Gate valve

GV9: Gate valve

LLM: Load lock vacuum chamber

LM1, LM2: Carrier module

LP1, LP2, LP3, LP4: load port

PM1, PM2, PM3, PM4, PM5, PM6: processing room

S1, S2, S3, S4, S5, S6, S7: sensor module

VTM: transfer room

W: Wafer

Claims (16)

A control method of a substrate processing system, the substrate processing system includes: The first room, which has the first placement part; The second room, which has a second placement part; A conveying device that conveys the substrate from the first chamber to the second chamber; A first sensor module, which is arranged on a conveyance path from the first chamber to the second chamber, and has at least three sensors for detecting the position of the outer edge of the substrate; and Control department The control method of the above-mentioned substrate processing system includes the following steps: Transporting the substrate, and detecting the position of the outer edge of the substrate by the first sensor module; and It is determined whether the detection point of the first sensor module is detected in the notch formed in the substrate. Such as the control method of the substrate processing system of claim 1, wherein The above determination steps include the following steps: Form a plurality of triangles according to a plurality of the above-mentioned detection points; Calculate the radius of the circumscribed circle based on the circumscribed circles of the plurality of the above-mentioned triangles formed; Calculate the average value of the radius of the circle outside the triangle; Generate a plurality of graphs showing the relationship between the radius of the outer circle of the triangle and the average value; and Based on the above pattern, the detection point detected from the above-mentioned notch is specified. Such as the control method of the substrate processing system of claim 2, wherein The control unit has a table that associates the pattern with the detection points detected in the notch, and The step of identifying the above-mentioned detection point is based on the above-mentioned figure and the above-mentioned table, and identifying the detection point detected from the above-mentioned notch. For example, the control method of the substrate processing system of claim 2 or 3, which further has the following steps: The substrate radius is calculated based on a plurality of detection points after excluding the detection points detected in the above-mentioned notch. Such as the control method of the substrate processing system of claim 4, wherein The substrate processing system includes a second sensor module, and the second sensor module is arranged downstream of the first sensor module in the conveying path, and has a device for detecting the position of the outer edge of the substrate At least 2 sensors, The step of calculating the radius of the substrate is based on the detection point of the first sensor module to calculate the radius of the substrate. For example, the control method of the substrate processing system of claim 5, which further has the following steps: The center position of the substrate is calculated based on the calculated radius of the substrate and the detection point of the second sensor module. Such as the control method of the substrate processing system of claim 6, wherein The step of calculating the center position of the above-mentioned substrate includes the following steps: Form a plurality of triangles according to a plurality of the above-mentioned detection points; Calculate the center of the circumscribed circle based on the plurality of circumscribed circles of the above-mentioned triangles formed; Based on whether the deviation of the center of the plural circumscribed circles exceeds the range of the placement accuracy, determine whether there is a detection point detected in the notch; and When it is determined that the deviation of the center of the plurality of the circumscribed circles does not exceed the range of the placement accuracy and does not exist at the detection point detected by the notch portion, the center position of the substrate is calculated from the center of the circumscribed circle. For example, the control method of the substrate processing system of claim 7, which includes the following steps: When it is judged that the deviation of the centers of the plural circumscribed circles exceeds the range of the above-mentioned placement accuracy and exists at the detection point detected by the notch part, calculate the radius of the circumscribed circle based on the formed plural circumscribed circles; Specify a circle outside the circle that is deemed to have the same value as the radius of the above-mentioned substrate; and The center position of the substrate is calculated based on the center of the specified circumscribed circle. Such as the control method of the substrate processing system of claim 8, wherein When there are a plurality of cases that have an outer circle radius that can be regarded as the same value as the substrate radius, the conveying path is shifted, and the detection of the second sensor module is performed again. A substrate processing system including: The first room, which has the first placement part; The second room, which has a second placement part; A conveying device that conveys the substrate from the first chamber to the second chamber; A first sensor module, which is arranged on a conveyance path from the first chamber to the second chamber, and has at least three sensors for detecting the position of the outer edge of the substrate; and Control department The above-mentioned control unit is configured as: It is determined whether the detection point of the first sensor module is detected in the notch formed in the substrate. Such as the substrate processing system of claim 10, wherein The above judgment is, Form a plurality of triangles according to a plurality of the above detection points, Calculate the radius of the circumscribed circle based on the circumscribed circle formed by the plurality of the above-mentioned triangles, Calculate the average value of the radius of the circle outside the triangle mentioned above, Generate a plurality of graphs of the relationship between the radius of the circle outside the triangle and the average value, Based on the above pattern, the detection point detected from the above-mentioned notch is specified. Such as the substrate processing system of claim 11, where The control unit has a table that associates the pattern with the detection points detected in the notch, and The specific system of the above detection points Based on the above-mentioned graph and the above-mentioned table, the detection point detected from the above-mentioned notch is specified. Such as the substrate processing system of claim 11 or 12, where The above-mentioned control unit is configured as: The substrate radius is calculated based on a plurality of detection points after excluding the detection points detected in the above-mentioned notch. Such as the substrate processing system of any one of claims 10 to 13, which further includes a second sensor module, The second sensor module is arranged on the conveying path further downstream than the first sensor module, and has at least two sensors for detecting the position of the outer edge of the substrate. Such as the substrate processing system of claim 13, which further includes a second sensor module, The second sensor module is arranged on the conveying path further downstream than the first sensor module, and has at least two sensors for detecting the position of the outer edge of the substrate; The calculation system of the above-mentioned substrate radius The radius of the substrate is calculated based on the detection point of the first sensor module. Such as the substrate processing system of claim 15, where The above-mentioned control unit is configured as: The center position of the substrate is calculated based on the calculated radius of the substrate and the detection point of the second sensor module.

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