TW201943103A - Light emitting device and manufacturing method thereof - Google Patents

Abstract

The present invention provides a light emitting device and a manufacturing method thereof. The light emitting device comprises a circuit substrate, a light emitting diode (LED) chip, an insulating layer with thermal insulation, a quantum dot material layer, and a protecting layer. The LED chip is disposed on the surface of the circuit substrate. The insulating layer is formed on the surface of the circuit substrate and covers the LED chip. The insulating layer completely seals the LED chip, and insulates the diffusion of thermal energy generated by the LED chip. The insulating layer comprises an upper surface and a side surface joined to the upper surface. The quantum dot material layer is formed at least on the upper surface of the insulating layer to directly contact the insulating layer. The protecting layer is formed at least on an outer surface of the portion of the quantum dot material layer.

Description

Light emitting device and manufacturing method thereof

The invention relates to a light-emitting device, in particular to a light-emitting device having a quantum dot (Quantum Dots, QD) material and a manufacturing method thereof.

The application of nanomaterials has been a hot topic in recent years. Among them, quantum dot materials are one of the typical nanomaterials. In the field of display and lighting, with the increasing requirements for color saturation and luminous color gamut, since the quantum dot material itself has a small full width at half maximum (FWHM), it is easier to achieve high transmittance. It guarantees the characteristics of high color gamut (NTSC), and changes the wavelength of incident light through the composition material and size, which can accurately control the color point. Therefore, quantum dot materials have gradually been introduced and applied in the field of display or lighting.

Please refer to the first figure, which is a schematic cross-sectional view of a conventional light emitting device. The light-emitting device shown in the first figure is that after the light-emitting diode lamp particles 8 which have been packaged and contain quantum dot materials are first produced, each one is processed by a Surface Mount Technology (SMT) process. The light-emitting diode lamp 8 is attached to a circuit board 9 to be modularized into a sheet-shaped light-emitting device. Each of the light-emitting diode lamps 8 includes a bracket 80, a light-emitting diode wafer 81, and an encapsulating material 82. The light emitting diode wafer 81 is disposed in a groove provided by the bracket 80. The encapsulating material 82 is a mixture of a quantum dot material 821, an adhesive material 822, and other materials, and is dispensed in the groove of the bracket 80 to cover the surface of the light emitting diode wafer 81. In order to make a light-emitting device, each light-emitting diode lamp 8 that has been packaged must go through a high-temperature SMT process. This will allow the encapsulation material 82 containing the quantum dot material 821 to pass through the high-temperature process. The material 821 will be deteriorated due to the high temperature. In addition, the amount The sub-dot material 821 is also liable to produce an oxidation reaction with the external environment due to the lack of effective insulation, which causes the life decay.

In order to improve the above problems, the prior art further proposes an improved design. Please refer to the second figure, which is a schematic cross-sectional view of another prior art light-emitting device. The light-emitting device shown in the second figure directly packages the bracket 80, the light-emitting diode wafer 81, and the quantum dot packaging structure 83 into a module for use, so that the set quantum dot packaging structure 83 does not need to go through a high-temperature process.

The bracket 80 includes a substrate 801 with a circuit wiring and a frame 802, and the bracket 80 may adopt a strip-shaped design. The frame 802 includes a supporting portion 8021 and an accommodating space 8022. The supporting portion 8021 is used to support and erect the quantum dot packaging structure 83; the accommodating space 8022 is used to accommodate a plurality of light emitting diode wafers 81. The light emitting diode wafer 81 is located in the accommodating space 8022 and is fixed on the substrate 801. The quantum dot packaging structure 83 is placed on the supporting portion 8021. The quantum dot packaging structure 83 usually seals the quantum dot material 831 in a container 832, thereby effectively preventing the quantum dot material 831 from contacting the external environment and generating an oxidation reaction. The encapsulant 84 fills the accommodating space 8022 and covers the light-emitting diode wafer 81. In addition to encapsulating the light-emitting diode wafer 81, the encapsulant 84 is used to fix the aforementioned quantum dot packaging structure mounted on the support portion 8021. 83.

Although the light emitting device shown in the second figure can avoid the degradation or oxidation of the quantum dot material, the current quantum dot packaging structure 83 is usually designed by using a glass container to encapsulate the quantum dot material 831 to make a quantum strip; or A film material (such as PET) is used to cover the quantum dot material 831 to make a quantum dot film (QD Film). In this way, the quantum dot packaging structure 83 will have a certain thickness, at least greater than 200 microns (μm). . In addition, the bracket 80 also needs to occupy a certain amount of space. Therefore, the light-emitting device will not be applied to increasingly thin and light products.

In this regard, how to make the light-emitting device with the effect brought by the quantum dot material, while taking into account the lightness and thinness of the product itself, is the direction worthy of research and development at present.

Many embodiments of the present invention are directly stacked in a laminated manner through structural improvements, so that the light emitting device not only has the advantage of being thin and light, but also protects the quantum dot material from being affected by high temperature or high humidity environments. Extend the life of quantum dot materials when used in light emitting devices.

According to some embodiments of the present invention, a light emitting device is provided, which includes: a circuit substrate, a light emitting diode wafer, a barrier layer having a heat insulation function, a quantum dot material layer, and a protective layer. The light emitting diode wafer is disposed on the surface of the circuit substrate. The barrier layer is formed on the surface of the circuit substrate and covers the light-emitting diode wafer, so as to completely seal the light-emitting diode wafer and block the thermal energy generated by the light-emitting diode wafer from diffusing outward. The barrier layer includes the upper surface and the upper surface. Jointed side surface. The quantum dot material layer is formed on at least the upper surface of the barrier layer to directly contact the barrier layer. The protective layer is formed on at least an outer surface of a portion of the quantum dot material layer.

In some embodiments of the present invention, the quantum dot material layer extends from the upper surface of the barrier layer and is formed on the side surface of the barrier layer and the surface of the circuit substrate to completely cover the barrier layer.

In some embodiments of the present invention, the outer surface of the quantum dot material layer is divided into an upper outer surface and a side outer surface bonded to the upper outer surface. The protective layer is formed on the upper outer surface of the quantum dot material layer and is formed from the quantum dots. The upper outer surface of the material layer extends from the outer surface of the side of the quantum dot material layer and the surface of the circuit substrate to completely seal the quantum dot material layer.

In some embodiments of the present invention, the light-emitting device further includes a light-limiting layer formed on a surface of the circuit substrate and a side surface of the barrier layer, and is bonded to the protective layer to completely seal the barrier layer and the quantum dot material layer. The outer surface of the quantum dot material layer is divided into an upper outer surface and a side outer surface bonded to the upper outer surface, and the protective layer includes a light emitting upper surface and a light emitting side surface bonded to the light emitting upper surface.

In some embodiments of the present invention, the protective layer is formed on the upper outer surface and the outer side surface of the quantum dot material layer.

In some embodiments of the present invention, the height of the light limiting layer is equal to the vertical distance from the surface of the circuit substrate to the upper surface of the barrier layer.

In some embodiments of the present invention, the light-restricting layer is formed on the outer side surface of the quantum dot material layer, and the protective layer is formed on the upper outer surface of the quantum-dot material layer and extends to contact the light-restricting layer.

In some embodiments of the present invention, the height of the light limiting layer is equal to the vertical distance between the surface of the circuit substrate and the upper outer surface of the quantum dot material layer.

In some embodiments of the present invention, the protective layer is formed on the upper outer surface of the quantum dot material layer, and the light limiting layer is formed on the outer side surface of the quantum dot material layer and the light emitting side surface of the protective layer.

In some embodiments of the present invention, the height of the light-limiting layer is equal to the vertical distance between the surface of the circuit substrate and the upper surface of the protective layer.

In some embodiments of the present invention, the light-limiting layer is an opaque layer for reflecting light emitted from the light-emitting diode wafer.

In some embodiments of the present invention, the material of the light-limiting layer includes a glue material and a blocking particulate matter, and the blocking particulate matter accounts for 5% to 50% of the entire weight percentage.

In some embodiments of the present invention, the barrier particulate material is selected from any one or a combination of silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and zirconium dioxide (ZrO ₂ ).

In some embodiments of the present invention, the vertical distance between the upper surface or the side surface of the barrier layer and the light emitting diode wafer is at least 50 microns.

In some embodiments of the present invention, the material of the barrier layer includes a glue material and a barrier particulate material, and the weight percentage of the barrier particulate material is not more than 5%.

In some embodiments of the present invention, the barrier particulate material is selected from any one or a combination of silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and zirconium dioxide (ZrO ₂ ).

In some embodiments of the present invention, the material of the protective layer is selected from the same material as the barrier layer.

In some embodiments of the present invention, the light emitting device further includes a heat dissipation module disposed on a surface of the circuit substrate opposite to the light emitting diode wafer.

According to some embodiments of the present invention, a method for manufacturing a light-emitting device is provided. The steps include: setting a light-emitting diode wafer on a surface of a circuit substrate. Forming a barrier layer with a heat insulation effect on the surface of the circuit substrate and covering the light-emitting diode wafer to completely seal the light-emitting diode wafer and blocking the thermal energy generated by the light-emitting diode wafer from diffusing outward, wherein the barrier layer includes an upper surface And side surfaces that are joined to the upper surface. The quantum dot material layer is formed at least on the upper surface of the barrier layer and directly contacts the barrier layer. A protective layer is formed at least on the outer surface of a portion of the quantum dot material layer.

In some embodiments of the present invention, the step of forming the quantum dot material layer further includes: extending from the upper surface of the barrier layer and formed on the side surface of the barrier layer and the surface of the circuit substrate to completely cover the barrier layer.

In some embodiments of the present invention, the outer surface of the quantum dot material layer is divided into an upper outer surface and a side outer surface bonded to the upper outer surface. The protective layer is formed on the upper outer surface of the quantum dot material layer and is formed from the quantum dot The upper outer surface of the material layer extends from the outer surface of the side of the quantum dot material layer and the surface of the circuit substrate to completely seal the quantum dot material layer.

In some embodiments of the present invention, the method for manufacturing a light emitting device further includes: forming a light-limiting layer on the surface of the circuit substrate and the side surface of the barrier layer, and bonding with the protective layer to completely seal the barrier layer and the quantum dot material layer. . The outer surface of the quantum dot material layer is divided into an upper outer surface and a side outer surface bonded to the upper outer surface, and the protective layer includes a light emitting upper surface and a light emitting side surface bonded to the light emitting upper surface.

In some embodiments of the present invention, the step of forming the protective layer further includes: forming a protective layer on an upper outer surface and a lateral outer surface of the quantum dot material layer.

In some embodiments of the present invention, the step of forming a light-restricting layer further includes: forming a light-restricting layer on a lateral outer surface of the quantum dot material layer.

In some embodiments of the present invention, the step of forming a protective layer further includes: forming a protective layer on an upper outer surface of the quantum dot material layer and extending to contact the light-limiting layer.

In some embodiments of the present invention, the step of forming a protective layer further includes: forming a protective layer on an upper outer surface of the quantum dot material layer.

In some embodiments of the present invention, the step of forming a light-limiting layer further includes: forming a light-limiting layer on a lateral outer surface of the quantum dot material layer and a light-emitting side surface of the protective layer.

In some embodiments of the present invention, the material of the light-limiting layer includes a glue material and a blocking particulate matter, and the blocking particulate matter accounts for 5% to 50% of the entire weight percentage.

In some embodiments of the present invention, the barrier particulate material is selected from any one or a combination of silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and zirconium dioxide (ZrO ₂ ).

In some embodiments of the present invention, the vertical distance between the upper surface or the side surface of the barrier layer and the light emitting diode wafer is at least 50 microns.

In some embodiments of the present invention, the material of the barrier layer includes a glue material and a barrier particulate material, and the weight percentage of the barrier particulate material is not more than 5%.

In some embodiments of the present invention, the barrier particulate material is selected from any one or a combination of silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and zirconium dioxide (ZrO ₂ ).

In some embodiments of the present invention, the material of the protective layer is selected from the same material as the barrier layer.

In some embodiments of the present invention, the light-emitting diode wafer is disposed on the surface of the circuit substrate through a high-temperature reflow furnace process, wherein the high-temperature temperature is greater than 260 ° C.

10‧‧‧circuit board

101‧‧‧electrode contacts

11‧‧‧light-emitting diode chip

12‧‧‧ barrier layer

121‧‧‧ Top surface

122‧‧‧Side surface

13‧‧‧ Quantum Dot Material Layer

131‧‧‧ upper outer surface

132‧‧‧side outer surface

14‧‧‧ protective layer

141‧‧‧light upper surface

142‧‧‧light side surface

15‧‧‧light-limiting layer

20‧‧‧ Thermal Module

D‧‧‧distance

H‧‧‧ height

8‧‧‧ LED Diode

80‧‧‧ bracket

801‧‧‧ substrate

802‧‧‧Frame

8021‧‧‧Support

8022‧‧‧accommodation space

81‧‧‧light-emitting diode chip

82‧‧‧Encapsulation material

821, 831‧‧‧ Quantum Dot Materials

822‧‧‧Glue

83‧‧‧ Quantum Dot Packaging Structure

832‧‧‧container

84‧‧‧Encapsulant

9‧‧‧Circuit Board

The first figure is a schematic cross-sectional view of a conventional light emitting device.

The second figure is a schematic cross-sectional view of another conventional light emitting device.

The third figure is a schematic cross-sectional view of a light emitting device according to a first embodiment of the present invention.

The fourth figure is a schematic cross-sectional view of a light emitting device according to a second embodiment of the present invention. Illustration.

The fifth figure is a schematic cross-sectional view of a light emitting device according to a third embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of a light emitting device according to a fourth embodiment of the present invention.

The seventh figure is a flowchart of a method for manufacturing a light emitting device according to the first embodiment of the present invention.

FIG. 8 is a flowchart of a method of manufacturing a light emitting device according to a second embodiment of the present invention.

The ninth figure is a flowchart of a method of manufacturing a light emitting device according to a third embodiment of the present invention.

The tenth figure is a flowchart of a method of manufacturing a light emitting device according to a fourth embodiment of the present invention.

Several embodiments of the present invention will be disclosed in the following drawings. For the sake of clear description, many practical details will be described in the following description. It should be understood, however, that these practical details should not be used to limit the invention. In addition, in order to simplify the drawings, some conventional structures and elements will be shown in the drawings in a simple and schematic manner. Furthermore, the position words such as "up", "down", "left", "right", "inside", "outside", and "side" mentioned in the embodiment only refer to the relative position of the currently designated view, Rather than absolute positions, in the embodiments, "up" and "outside" refer to the side that is relatively closer to the user.

Please refer to the third figure, which is a schematic cross-sectional view of a light emitting device according to a first embodiment of the present invention. The light emitting device of this embodiment has a modular structure and can be directly applied to electronic products such as various display devices and lighting devices. The light-emitting device is a sheet-like modular structure, and may be a sheet-like shape that is presented in various shapes such as a strip shape, a circle, and the like, which is not limited by the present invention. The light-emitting device includes: a circuit substrate 10, a light-emitting diode wafer 11, a barrier layer 12 having a heat insulation function, and a quantum dot material layer 13. And protective layer 14.

The light-emitting diode wafer 11 is disposed on the surface of the circuit substrate 10, and in this embodiment is, for example, disposed on the upper surface of the circuit substrate 10. Specifically, the light-emitting diode wafer 11 may be, for example, a surface mount technology (Surface Mount). Technology (SMT) uses a high-temperature reflow furnace process to directly die-bond and wire the circuit substrate 10 to electrically connect the circuit substrate 10, where the high-temperature temperature is greater than 260 ° C. In one embodiment, one or more light emitting diode wafers 11 may be used. In another embodiment, the light emitting diode wafer 11 may be, for example, a blue light emitting diode wafer.

A barrier layer 12 having a heat insulating effect is formed on the surface of the circuit substrate 10, that is, it is located on the same surface as the light emitting diode wafer 11 to cover the light emitting diode wafer 11. Specifically, the barrier layer 12 is to cover all surfaces of the light-emitting diode wafer 11 except the surface in contact with the circuit substrate 10 to completely seal the light-emitting diode wafer 11 and block the thermal energy generated during the operation of the light-emitting diode wafer 11 from diffusing outward. In one embodiment, the material of the barrier layer 12 is, for example, a design including a glue material and a barrier particulate material, and is a light-transmitting layer. The weight percentage of the barrier particulate matter is not more than 5%. In a preferred embodiment, the weight percentage of the barrier particulate matter is 2% to 3%. In addition, the adhesive material may be, for example, Silicone or Epoxy, and the blocking particulate material may be, for example, selected from silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and Any or a combination of zirconia (ZrO ₂ ). It should be noted that if the barrier layer 12 is designed to have a weight percentage of the total particulate matter greater than 5%, an opaque effect will be formed.

In addition, the barrier layer 12 provides an upper surface 121 and a side surface 122 bonded to the upper surface 121 after the light-emitting diode wafer 11 is completely sealed. The side surface 122 generally refers to the upper surface 121 and the upper surface. All surfaces except the opposite lower surface of 121, and the side surface 122 may actually include four surfaces, five surfaces, etc. according to the shape sealed by the barrier layer 12, so that the cross-section of the barrier layer 12 on the upper surface 121 It is a quadrangle, a pentagon, etc., which is not limited by the present invention. In another embodiment, the side surface 122 may also be an integral arc-shaped surface, so that the barrier The cross section of the layer 12 on the upper surface 121 is circular.

It is worth mentioning that in order to effectively block the thermal energy generated during the operation of the light-emitting diode wafer 11 and prevent degradation caused by the thermal energy affecting the quantum dot material layer 13, in one embodiment, the top of the barrier layer 12 The vertical distance D from the surface 121 or the side surface 122 to the light-emitting diode wafer 11 is preferably designed to be at least 50 micrometers, that is, the thickness of the barrier layer 12 is preferably to be at least 50 micrometers.

The quantum dot material layer 13 is formed on at least the upper surface 121 of the barrier layer 12 and directly contacts the barrier layer 12. In this embodiment, the quantum dot material layer 13 extends from the upper surface 121 of the barrier layer 12 and is formed on the side surface 122 of the barrier layer 12 and the surface of the circuit substrate 10 to completely cover the barrier layer 12. Structurally, the formed quantum dot material layer 13 has an outer surface, and the outer surface can be further divided into an upper outer surface 131 and a side outer surface 132 joined to the upper outer surface 131. In this embodiment, since the quantum dot material layer 13 covers the barrier layer 12, the upper outer surface 131 of the quantum dot material layer 13 is correspondingly located above the upper surface 121 of the barrier layer 12; and the outer lateral surface 132 is corresponding to It is located outside the side surface 122 of the barrier layer 12 and includes the same number of surfaces with the same shape as the sealing shape formed by the barrier layer 12. In another embodiment, the thickness of the quantum dot material layer 13 (the vertical distance from the upper surface 121 of the barrier layer 12 to the upper outer surface 131 of the quantum dot material layer 13) may be designed to be, for example, 50 micrometers.

The material of the quantum dot material layer 13 may be selected according to the actual design, which is not limited by the present invention. For example, the quantum dot material may be a cadmium-based quantum dot, such as a core of cadmium selenide / cadmium sulfide (CdSe / CdS). Core-shell structure, indium phosphide quantum dots, such as the core / shell structure of indium phosphide / zinc sulfide (InP / ZnS). It is added that the light emitting device having the quantum dot material layer 13 has an effect of improving the color gamut (NTSC). In one embodiment, the light emitting device having the quantum dot material layer 13 can improve the light emitting device compared to the conventional light emitting diode. More than 20% of NTSC.

The protective layer 14 is formed on at least a part of the outer surface of the quantum dot material layer 13. In this embodiment, the protective layer 14 is formed on the upper outer surface of the quantum dot material layer 13 131 extends from the upper outer surface 131 of the quantum dot material layer 13 and is formed on the lateral outer surface 132 of the quantum dot material layer 13 and the surface of the circuit substrate 10 to completely seal the quantum dot material layer 13. Structurally, the protective layer 14 includes a light emitting upper surface 141 and a light emitting side surface 142 that is bonded to the light emitting upper surface 141. In this embodiment, since the protective layer 14 completely covers the quantum dot material layer 13, the light emitting upper surface 141 of the protective layer 14 is correspondingly located above the upper outer surface 131 of the quantum dot material layer 13; and the light emitting side surface 142 Correspondingly, it is located on the outside of the side outer surface 132 of the quantum dot material layer 13 and includes the same number of surfaces with the same shape as the coating shape formed by the quantum dot material layer 13. In another embodiment, the light emitting side surface 142 of the protective layer 14 does not need to be formed with the quantum dot material layer 13, and the light emitting side surface 142 may include the quantum dot material layer 13 according to the actual design requirements. Surfaces with different numbers and / or shapes of the side outer surfaces 132.

In one embodiment, the protective layer 14 is a light-transmitting layer, and the material thereof can be selected from the same material as the barrier layer 12. Of course, in other embodiments, the material of the protective layer 14 may be selected from a material different from that of the barrier layer 12. In addition, the thickness of the protective layer 14 (the vertical distance from the upper outer surface 131 of the quantum dot material layer 13 to the light emitting upper surface 141 of the protective layer 14) may be designed to be, for example, 50 micrometers.

As mentioned above, the light-emitting device constructed in this embodiment is manufactured by stacking layers from the inside to the outside. In one embodiment, after the light-emitting diode wafer 11 is set, the rest are The stacking method of the barrier layer 12, the quantum dot material layer 13, and the protective layer 14 can be directly stacked, for example, by pouring and curing layer by layer, so that the whole can form a modular structure after the stacking process. The light-emitting device has the advantage of being thin and light. In one embodiment, the height H formed from the surface of the circuit substrate 10 to the light-emitting upper surface 141 of the protective layer 14 is less than 400 micrometers. In another embodiment, the height H formed from the surface of the circuit substrate 10 to the light-emitting upper surface 141 of the protective layer 14 is less than 300 microns. In addition, the design of the barrier layer 12 and the protective layer 14 of the light-emitting device allows the quantum dot material layer 13 to be protected from the thermal energy generated during the operation of the light-emitting diode wafer 11, and can also be prevented from being affected. The influence of temperature, humidity and oxygen to the external environment can prolong the service life of the quantum dot material layer 13 when it is applied to a light emitting device.

It is further explained that, since the blocking layer 12 and the protective layer 14 include blocking particulate matter, the light scattering effect of the light emitting device can be increased. In addition, since the barrier layer 12 and the protective layer 14 are designed using, for example, a light-transmitting layer, the light generated by the light-emitting diode wafer 11 in this embodiment will not be hindered in any way, but can be completely controlled by the protective layer 14. The light emitting upper surface 141 and the light emitting side surface 142 are emitted outward, so that the light emitting device has a larger light emitting angle and range.

The light-emitting device of this embodiment further includes a heat dissipation module 20 disposed on a surface of the circuit substrate 10 opposite to the light-emitting diode wafer 11, that is, a lower surface of the circuit substrate 10. The heat dissipation module 20 is used to dissipate thermal energy generated by the operation of the light emitting diode chip 11 to avoid the service life of the light emitting diode chip 11 from being reduced due to overheating. In one embodiment, the heat dissipation module 20 may be directly assembled to the circuit substrate 10 through a mechanism assembly (not shown). In another embodiment, the heat dissipation module 20 may also be connected with an adhesive (not shown). Attached to the circuit board 10.

In addition, the circuit substrate 10 includes a circuit wiring (not shown) and a pair of electrode contacts 101. The pair of electrode contacts 101 is, for example, a positive electrical contact and a negative electrical contact for receiving an external power source (not shown). ) Power. All the light-emitting diode wafers 11 on the circuit substrate 10 are connected in series and / or in parallel through circuit wiring, and are electrically connected to the pair of electrode contacts 101. When the light-emitting device is applied to electronic products such as various display devices and lighting devices, the external power source provided by the electronic product only needs to be electrically connected to the pair of circuit contacts 101 to be used.

Please refer to the fourth figure, which is a schematic cross-sectional view of a light emitting device according to a second embodiment of the present invention. The structure of the light-emitting device shown in FIG. 4 is substantially the same as that of the light-emitting device of the first embodiment. The difference is that the light-emitting device of this embodiment further includes a light-limiting layer 15, and further includes a quantum dot material layer 13 and a protection layer. The formation position of the layer 14 is also different. The following only describes the parts with different structures, and the parts with the same structure will not be repeated.

The quantum dot material layer 13 of this embodiment is formed only on the upper surface 121 of the barrier layer 12. The light-limiting layer 15 with the added design is formed on the surface of the circuit substrate 10 and the side surface 122 of the blocking layer 12. In addition, the protective layer 14 is formed on the upper outer surface 131 and the outer side surface 132 of the quantum dot material layer 13, and is bonded to the light limiting layer 15. In this way, in this embodiment, the barrier layer 12 and the quantum dot material layer 13 are completely sealed by designing a joint structure of the protective layer 14 and the light-limiting layer 15.

Following the structure described above, the height of the light-restricting layer 15 in this embodiment is equal to the vertical distance between the surface of the circuit substrate 10 and the upper surface 121 of the barrier layer 12. In addition, the light-limiting layer 15 is an opaque layer and can reflect the light emitted from the light-emitting diode wafer 11, thereby limiting the light-emitting angle and range of the light-emitting device. In an embodiment, the material of the light-limiting layer 15 includes a glue material and a barrier particle substance, wherein the barrier particle substance accounts for 5% to 50% of the total weight percentage, and the glue material can be selected from, for example, silicone or Silicone or epoxy resin. (Epoxy), and the barrier particulate material may be, for example, any one or a combination selected from silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and zirconium dioxide (ZrO ₂ ). In addition, in other embodiments, the light-limiting layer 15 may be designed as a white opaque layer. It should be noted that if the design of the light-limiting layer 15 exceeds 50% by weight of the particulate matter, the powder-to-gel ratio will be too high, which will reduce the adhesion of the light-limiting layer 15 and cause it to fall off easily ( Peeling).

The light-emitting device structured in this embodiment is manufactured by stacking layers from the inside to the outside. In one embodiment, after the light-emitting diode wafer 11 is set, the rest are in the barrier layer 12, the quantum The method of laminating the dot material layer 13, the protective layer 14, and the light-restricting layer 15 can be directly stacked, for example, by pouring and curing layer by layer; in addition, it can also be directly stacked by layer by layer. Therefore, the whole structure can be formed into a modular structure after the stacking process, so that the light-emitting device has the advantage of being thin and light. Unlike the structure of the first embodiment, this embodiment uses the barrier layer 12 to prevent the thermal energy generated by the light-emitting diode wafer 11 from affecting the quantum dot material layer 13, and is formed by using the protective layer 14 and the light-limiting layer 15. The bonding structure prevents the temperature, humidity and oxygen of the external environment from affecting the quantum dot material layer 13.

In addition, the light emitted from the light-emitting diode wafer 11 in this embodiment is more concentrated than that in the first embodiment (the third figure). The light emitted by the light-emitting diode wafer 11 is higher than the light-limiting layer 15 After the height position, the light emitting upper surface 141 and the light emitting side surface 142 of the protective layer 14 are emitted outward.

Please refer to the fifth figure again, which is a schematic cross-sectional view of a light emitting device according to a third embodiment of the present invention. The structure of the light-emitting device shown in FIG. 5 is substantially the same as that of the light-emitting device of the second embodiment. The difference is that the positional relationship formed between the protective layer 14 and the light-limiting layer 15 of the light-emitting device of this embodiment is different. . The following only describes the parts with different structures, and the rest will not be repeated.

The light limiting layer 15 of this embodiment is formed on the side outer surface 132 of the quantum dot material layer 13. In contrast, the protective layer 14 is formed on the upper outer surface 131 of the quantum dot material layer 13 and extends to contact the light limiting layer 15 so that the protective layer 14 and the light limiting layer 15 are joined to completely seal the barrier layer 12 and the quantum dot material layer 13. .

Following the structure described above, the height of the light limiting layer 15 in this embodiment is equal to the vertical distance between the surface of the circuit substrate 10 and the upper outer surface 131 of the quantum dot material layer 13. Since the height of the light-restricting layer 15 of this embodiment is relatively higher than the height of the light-restricting layer 15 of the second embodiment (the fourth figure), the light emitted from the light-emitting diode wafer 11 of this embodiment is compared with that of the first embodiment. The second embodiment will be more concentrated. The light emitted by the light-emitting diode wafer 11 will be at a position higher than the height of the light-limiting layer 15 before exiting from the light-emitting upper surface 141 and the light-emitting side surface 142 of the protective layer 14 outward. Shoot out.

Please refer to FIG. 6 again, which is a schematic cross-sectional view of a light emitting device according to a fourth embodiment of the present invention. The structure of the light-emitting device shown in FIG. 6 is substantially the same as that of the light-emitting device of the second embodiment. The difference is that the positional relationship formed between the protective layer 14 and the light-limiting layer 15 of the light-emitting device of this embodiment is different. . The following only describes the parts with different structures, and the rest will not be repeated.

The protective layer 14 of this embodiment is formed only on the upper outer surface 131 that covers the quantum dot material layer 13. The light-restricting layer 15 is formed on the side outer surface 132 of the quantum dot material layer 13 and the light-emitting side surface 142 of the protective layer 14, so that the protective layer 14 and the light-restricting layer 15 is bonded to completely seal the barrier layer 12 and the quantum dot material layer 13.

Following the structure described above, the height of the light limiting layer 15 in this embodiment is equal to the vertical distance from the surface of the circuit substrate 10 to the light emitting upper surface 141 of the protective layer 14. Since the height of the light-restricting layer 15 of this embodiment is relatively higher than the height of the light-restricting layer 15 of the third embodiment (fifth figure), the light emitted from the light-emitting diode wafer 11 of this embodiment is relatively The third embodiment will be more concentrated, and the light emitted from the light-emitting diode wafer 11 will be directly emitted from the light-emitting upper surface 141 of the protective layer 14 after the position higher than the height of the light-limiting layer 15. In other words, this embodiment The light emitted from the light-emitting diode wafer 11 is restricted to be emitted in a concentrated manner.

From the content of the second embodiment (fourth diagram) to the fourth embodiment (sixth diagram) of the present invention, it can be understood that, in order to meet the specifications of different electronic products, the light-limiting layer 15 can be designed to have different heights for adjusting light emission. The light emitting angle and range of the device allow better applicability in applications.

In order to further explain the manufacturing process of the light-emitting devices of the foregoing embodiments, please continue to refer to the various manufacturing method embodiments described below. It should be stated first that the following mainly describes the process steps. The structure and material I will not repeat them here.

Please refer to the seventh figure, which is a flowchart of a method for manufacturing a light emitting device according to the first embodiment of the present invention. For a clearer understanding, the structure of the light emitting device shown in FIG. 3 can be referred to together. The steps of the method for manufacturing a light-emitting device according to this embodiment include: first, setting a light-emitting diode wafer 11 on a surface of a circuit board 10 (S701). The light-emitting diode wafer 11 may be directly bonded to the surface of the circuit substrate 10 by SMT through a high-temperature reflow furnace process, wherein the high-temperature temperature is greater than 260 ° C. Next, a barrier layer 12 with heat insulation is formed on the surface of the circuit substrate 10 and covers the light-emitting diode wafer 11 (S703). The barrier layer 12 is used to completely seal the light-emitting diode wafer 11 and block the light-emitting diode. The thermal energy generated during the operation of the body wafer 11 is diffused outward.

After the light-emitting diode wafer 11 is sealed with the barrier layer 12, a quantum is formed The dot material layer 13 is on the upper surface 121 of the barrier layer 12 (S705), and further extends from the upper surface 121 of the barrier layer 12 to form a quantum dot material layer 13 on the side surface 122 of the barrier layer 12 and the surface of the circuit substrate 10 (S707). ), So that the quantum dot material layer 13 can directly contact the barrier layer 12 and completely cover the barrier layer 12. In one embodiment, steps S705 and S707 can be performed in the same step of the manufacturing process. Finally, a protective layer 14 is formed on the upper outer surface 131 and the lateral outer surface 132 of the quantum dot material layer 13 (S709). More specifically, the protective layer 14 is formed on the upper outer surface 131 of the quantum dot material layer 13, The quantum dot material layer 13 is extended from the upper outer surface 131 of the quantum dot material layer 13 to the lateral outer surface 132 of the quantum dot material layer 13 and the surface of the circuit substrate 10 to completely seal the quantum dot material layer 13.

In one embodiment, in order to make the light-emitting device have better heat dissipation effect, after step S709 is completed, the heat-dissipating module 20 can be selectively disposed on the surface of the circuit substrate 10 opposite to the light-emitting diode wafer 11.

Please refer to FIG. 8 again, which is a flowchart of a method for manufacturing a light emitting device according to a second embodiment of the present invention. For a clearer understanding, the structure of the light-emitting device shown in FIG. 4 can be referred to together. Steps S801 to S805 in the method of manufacturing a light emitting device according to this embodiment are substantially the same as steps S701 to S705 in the first embodiment, and therefore will not be described again.

After step S805 is completed, in this embodiment, a light-limiting layer 15 is further formed on the surface of the circuit substrate 10 and the side surface 122 of the barrier layer 12 (S807), and a protective layer 14 is formed on the upper outer surface 131 of the quantum dot material layer 13. And the side outer surface 132 (S809), so that the protective layer 14 can contact the light-limiting layer 15 and be bonded to the light-limiting layer 15 to completely seal the barrier layer 12 and the quantum dot material layer 13. In addition, in order to make the light-emitting device have better heat dissipation effect, after step S809 is completed, the heat-dissipating module 20 can also be selectively disposed on the surface of the circuit substrate 10 opposite to the light-emitting diode wafer 11.

Please refer to FIG. 9 again, which is a flowchart of a method for manufacturing a light emitting device according to a third embodiment of the present invention. For a clearer understanding, you can refer to Figure 5 again. The structure of the light-emitting device shown below. Steps S901 to S905 in the method of manufacturing a light emitting device according to this embodiment are substantially the same as steps S701 to S705 in the first embodiment, and therefore will not be described again.

After step S905 is completed, the present embodiment further forms a light limiting layer 15 on the surface of the circuit substrate 10, the side surface 122 of the barrier layer 12, and the side outer surface 132 of the quantum dot material layer 13 (S907), and a protective layer is formed. 14 is on the upper outer surface 131 of the quantum dot material layer 13 and extends to contact the light limiting layer 15 (S909), so that the protective layer 14 can be bonded to the light limiting layer 15 to completely seal the barrier layer 12 and the quantum dot material layer 13. In addition, in order to make the light-emitting device have better heat dissipation effect, after step S909 is completed, the heat-dissipating module 20 can also be selectively disposed on the surface of the circuit substrate 10 opposite to the light-emitting diode wafer 11.

Please refer to FIG. 10 again, which is a flowchart of a method for manufacturing a light emitting device according to a fourth embodiment of the present invention. For a clearer understanding, the structure of the light-emitting device shown in FIG. 6 may be referred to together. Steps S1001 to S1005 in the method of manufacturing a light emitting device according to this embodiment are substantially the same as steps S701 to S705 in the first embodiment, and therefore will not be described again.

After step S1005 is completed, in this embodiment, a protective layer 14 is further formed on the upper outer surface 131 of the quantum dot material layer 13 (S1007), and a light limiting layer 15 is formed on the surface of the circuit substrate 10 and the side surface 122 of the barrier layer 12 And the outer side surface 132 of the quantum dot material layer 13 and the light emitting side surface 142 of the protective layer 14 (S1009). In this way, the protective layer 14 can be bonded to the light-limiting layer 15 to completely seal the barrier layer 12 and the quantum dot material layer 13. In addition, in order to make the light-emitting device have better heat dissipation effect, after step S909 is completed, the heat-dissipating module 20 can also be selectively disposed on the surface of the circuit substrate 10 opposite to the light-emitting diode wafer 11.

It can be understood from the foregoing examples of various manufacturing methods that the barrier layer 12, the quantum dot material layer 13, the protective layer 14, and even the light-limiting layer 15 in the embodiment can be directly stacked, for example, by pouring and curing layer by layer. In addition, it can also be directly stacked in a patch-by-layer manner, so that the whole can form a mold after the stacking process. Organizational structure. Structurally, the quantum dot material layer 13 is effectively prevented from being affected by the high temperature generated by the light-emitting diode wafer 11 by the blocking effect of the barrier layer 12, and by the protective layer 14 or by the protective layer 14 and the light-limiting layer 15 It can effectively avoid the influence of temperature, humidity and oxygen from the external environment. Overall, in a light-emitting device with a quantum dot material, there is no need for any supporting bracket or frame design, so that the modularized light-emitting device has the advantage of being light and thin as a whole.

Although the present invention has been disclosed in various embodiments as above, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application.

Claims (34)

A light-emitting device includes: a circuit substrate; a light-emitting diode wafer provided on a surface of the circuit substrate; and a barrier layer having a heat insulation function formed on the surface of the circuit substrate and covering the light-emitting diode wafer To completely seal the light-emitting diode wafer and block the thermal energy generated by the light-emitting diode wafer from diffusing outward, wherein the barrier layer includes an upper surface and a side surface bonded to the upper surface; a quantum dot material; A layer formed on at least the upper surface of the barrier layer to directly contact the barrier layer; and a protective layer formed on at least an outer surface of a portion of the quantum dot material layer. The light-emitting device according to claim 1, wherein the quantum dot material layer extends from the upper surface of the barrier layer and is formed on the side surface of the barrier layer and the surface of the circuit substrate to completely cover the barrier layer. The light-emitting device according to claim 2, wherein the outer surface of the quantum dot material layer is divided into an upper outer surface and a side outer surface bonded to the upper outer surface, and the protective layer is formed on the quantum dot material layer. The upper outer surface is extended from the upper outer surface of the quantum dot material layer and is formed on the outer side surface of the quantum dot material layer and the surface of the circuit substrate to completely seal the quantum dot material layer. The light-emitting device according to claim 1, further comprising: a light-limiting layer formed on a surface of the circuit substrate and the side surface of the barrier layer, and bonded to the protective layer to completely seal the barrier layer and the quantum. A dot material layer; wherein the outer surface of the quantum dot material layer is distinguished into an upper outer surface and a side outer surface joined to the upper outer surface, and the protective layer includes a light emitting upper surface and the light emitting upper surface A light emitting side surface joined. The light-emitting device according to claim 4, wherein the protective layer is formed on the quantum dot material The upper outer surface and the outer side surface of the material layer. The light-emitting device according to claim 5, wherein a height of the light-limiting layer is equal to a vertical distance between a surface of the circuit substrate and the upper surface of the barrier layer. The light-emitting device according to claim 4, wherein the light-limiting layer is formed on the outer surface of the side of the quantum dot material layer, and the protective layer is formed on the outer surface of the upper side of the quantum-dot material layer and extends to contact the limit Light layer. The light-emitting device according to claim 7, wherein a height of the light-limiting layer is equal to a vertical distance from a surface of the circuit substrate to the upper outer surface of the quantum dot material layer. The light-emitting device according to claim 4, wherein the protective layer is formed on the upper outer surface of the quantum dot material layer, and the light limiting layer is formed on the outer outer surface of the side of the quantum dot material layer and the protective layer The light emitting side surface. The light-emitting device according to claim 9, wherein a height of the light-limiting layer is equal to a vertical distance between a surface of the circuit substrate and the light-emitting upper surface of the protective layer. The light-emitting device according to claim 4, wherein the light-limiting layer is an opaque layer and is used to reflect light emitted from the light-emitting diode wafer. The light-emitting device according to claim 4, wherein the material of the light-limiting layer includes a glue material and a blocking particulate matter, and the blocking particulate matter accounts for 5% to 50% of the entire weight percentage. The light-emitting device according to claim 12, wherein the blocking particulate material is selected from any one or a combination of silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and zirconium dioxide (ZrO ₂ ). . The light-emitting device according to claim 1, wherein a vertical distance from the upper surface or the side surface of the barrier layer to the light-emitting diode wafer is at least 50 microns. The light-emitting device according to claim 1, wherein the material of the barrier layer comprises a glue material and a barrier particulate material, and the weight percentage of the barrier particulate material is not more than 5%. The light-emitting device according to claim 15, wherein the blocking particulate material is selected from any one or a combination of silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and zirconium dioxide (ZrO ₂ ). . The light-emitting device according to claim 15, wherein the material of the protective layer is selected from the same material as the barrier layer. The light-emitting device according to claim 1, further comprising: a heat dissipation module disposed on a surface of the circuit substrate opposite to the light-emitting diode wafer. A method for manufacturing a light-emitting device includes: setting a light-emitting diode wafer on a surface of a circuit substrate; forming a barrier layer having a heat-insulating effect on the surface of the circuit substrate and covering the light-emitting diode wafer for: The light-emitting diode wafer is completely sealed, and the thermal energy generated by the light-emitting diode wafer is blocked from diffusing outward, wherein the barrier layer includes an upper surface and a side surface bonded to the upper surface; forming a quantum dot material layer at least Located on the upper surface of the barrier layer and directly contacting the barrier layer; and forming a protective layer at least an outer surface of a portion of the quantum dot material layer. The method for manufacturing a light emitting device according to claim 19, wherein the step of forming the quantum dot material layer further includes: extending from the upper surface of the barrier layer and formed on the side surface of the barrier layer and the circuit substrate Surface to completely cover the barrier layer. The method for manufacturing a light emitting device according to claim 20, wherein the outer surface of the quantum dot material layer is divided into an upper outer surface and a side outer surface joined to the upper outer surface, and the protective layer is formed on the quantum The upper outer surface of the dot material layer extends from the upper outer surface of the quantum dot material layer and is formed on the outer side surface of the quantum dot material layer and the surface of the circuit substrate to completely seal the quantum dot material layer . The method for manufacturing a light-emitting device according to claim 19, further comprising: forming a light-limiting layer on the surface of the circuit substrate and the side surface of the barrier layer, and bonding with the protective layer to completely seal the barrier layer and The quantum dot material layer; wherein the amount The outer surface of the sub-dot material layer is divided into an upper outer surface and a side outer surface joined with the upper outer surface, and the protective layer includes a light emitting upper surface and a light emitting side surface joined with the light emitting upper surface. . The method for manufacturing a light emitting device according to claim 22, wherein the step of forming the protective layer further comprises: forming the protective layer on the upper outer surface and the outer side surface of the quantum dot material layer. The method for manufacturing a light emitting device according to claim 22, wherein the step of forming the light limiting layer further comprises: forming the light limiting layer on an outer surface of the side of the quantum dot material layer. The method for manufacturing a light emitting device according to claim 24, wherein the step of forming the protective layer further comprises: forming the protective layer on the upper outer surface of the quantum dot material layer and extending to contact the light-limiting layer. The method for manufacturing a light emitting device according to claim 22, wherein the step of forming the protective layer further comprises: forming the protective layer on the upper outer surface of the quantum dot material layer. The method for manufacturing a light emitting device according to claim 26, wherein the step of forming the light limiting layer further comprises: forming the light limiting layer on an outer surface of the side of the quantum dot material layer and the light emitting side of the protective layer Side surface. The method for manufacturing a light-emitting device according to claim 22, wherein the material of the light-limiting layer includes a glue material and a blocking particulate matter, and the blocking particulate matter accounts for 5% to 50% of the total weight percentage. The method for manufacturing a light-emitting device according to claim 28, wherein the blocking particulate material is selected from any one of silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and zirconium dioxide (ZrO ₂ ). One or a combination. The method for manufacturing a light emitting device according to claim 19, wherein a vertical distance from the upper surface or the side surface of the barrier layer to the light emitting diode wafer is at least 50 micrometers. The method for manufacturing a light emitting device according to claim 19, wherein the material of the barrier layer is The material contains a rubber material and a barrier particulate material, and the barrier particulate material accounts for not more than 5% by weight of the whole. The method for manufacturing a light-emitting device according to claim 31, wherein the blocking particulate material is selected from any one of silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), boron nitride (BN), and zirconium dioxide (ZrO ₂ ). One or a combination. The method for manufacturing a light emitting device according to claim 31, wherein a material of the protective layer is selected from the same material as the barrier layer. The method for manufacturing a light-emitting device according to claim 19, wherein the light-emitting diode wafer is disposed on a surface of the circuit substrate through a high-temperature reflow furnace process, wherein the high-temperature temperature is greater than 260 ° C.