TW201946105A - Underlayer film forming composition for imprinting and practical application thereof - Google Patents
Underlayer film forming composition for imprinting and practical application thereof Download PDFInfo
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- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
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- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
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- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
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Abstract
本發明提供一種壓印用下層膜形成組成物,其包含聚合物及溶劑,上述聚合物包含源自pKa為4.0以下的單體之構成單元及聚合性基。此外,本發明關於一種與該壓印用下層膜形成組成物相關之套組、壓印用硬化性組成物、積層體、積層體的製造方法、圖案形成方法及半導體器件的製造方法。The present invention provides a composition for forming an underlayer film for imprint, which includes a polymer and a solvent, and the polymer includes a constituent unit derived from a monomer having a pKa of 4.0 or less and a polymerizable group. In addition, the present invention relates to a set related to the underlayer film-forming composition for imprint, a hardenable composition for imprint, a laminate, a method for producing a laminate, a method for forming a laminate, and a method for producing a semiconductor device.
Description
本發明關於一種壓印用下層膜形成組成物、套組、壓印用硬化性組成物、積層體、積層體的製造方法、圖案形成方法及半導體器件的製造方法。The present invention relates to an underlayer film-forming composition for imprinting, a kit, a hardening composition for imprinting, a laminated body, a method for producing a laminated body, a pattern forming method, and a method for producing a semiconductor device.
壓印法為轉印鑄模的圖案而在樹脂層上形成所期望的結構之方法。其中,藉由光壓印法,透過透光性鑄模或透光性基板來照射光,使硬化性組成物進行光硬化之後,能夠藉由剝離鑄模而將微細圖案轉印到光硬化物。在該方法中,能夠在室溫下進行壓印,因此能夠應用於半導體積體電路的製作等超微細圖案的精密加工領域。最近,亦報告有將該優點加以組合之奈米澆鑄法或製作三維積層結構之反轉壓印法等新的展開。
作為壓印用硬化性組成物的塗佈方法,正在研究噴墨塗佈(例如專利文獻1)。壓印用硬化性組成物通常作為1~100pL左右的液滴滴加於基材上。藉由採用噴墨塗佈,能夠對應於壓印圖案的粗密來調整塗佈量,並且能夠確保均勻的壓印圖案。有以下例子:為了進一步增強由壓印用硬化性組成物所形成之壓印層與基材的密接性,在兩者之間應用由壓印用下層膜形成組成物所形成之下層膜(專利文獻2、3)或密接層(專利文獻4、5)。
[先前技術文獻]
[專利文獻]The imprint method is a method of transferring a pattern of a mold to form a desired structure on a resin layer. Among them, by a light imprint method, light is irradiated through a light-transmitting mold or a light-transmitting substrate to light-harden a curable composition, and then a fine pattern can be transferred to the light-hardened object by peeling the mold. In this method, since embossing can be performed at room temperature, it can be applied to the field of precision processing of ultra-fine patterns such as the production of semiconductor integrated circuits. Recently, new developments such as a nano casting method combining these advantages or a reverse embossing method for making a three-dimensional laminated structure have also been reported.
As a coating method of the curable composition for imprint, inkjet coating is being studied (for example, Patent Document 1). The curable composition for imprinting is usually added as a droplet of about 1 to 100 pL on a substrate. By using inkjet coating, the coating amount can be adjusted in accordance with the thickness of the imprint pattern, and a uniform imprint pattern can be ensured. Here is an example: In order to further enhance the adhesion between the imprinted layer formed from the hardenable composition for imprint and the substrate, an underlayer film formed from the imprinted lower film-forming composition is applied between the two (patent Documents 2 and 3) or adhesive layers (Patent Documents 4 and 5).
[Prior technical literature]
[Patent Literature]
[專利文獻1]日本特表2005-533393號公報
[專利文獻2]日本特開2013-093552號公報
[專利文獻3]日本特開2014-093385號公報
[專利文獻4]日本特開2016-146468號公報
[專利文獻5]日本特開2017-206695號公報[Patent Document 1] Japanese Patent Publication No. 2005-533393
[Patent Document 2] Japanese Patent Laid-Open No. 2013-093552
[Patent Document 3] Japanese Patent Laid-Open No. 2014-093385
[Patent Document 4] Japanese Patent Laid-Open No. 2016-146468
[Patent Document 5] Japanese Patent Laid-Open No. 2017-206695
在光壓印法中,如上所述,在基板的表面塗佈壓印用硬化性組成物,並在其表面形成以與鑄模接觸之狀態照射光而使壓印用硬化性組成物進行硬化而成之壓印層。然後,包括剝離鑄模之製程。在剝離該鑄模之製程中,壓印層(硬化物)可能會從基板剝離附著到鑄模。認為其原因之一係,相比鑄模與壓印層的接著力,基板與壓印層的接著力並不是很高。為了解決該種問題,提出有例如上述專利文獻2~5所記載之技術,藉此實現了一定程度的解決。然而,隨著壓印法的活用的擴大、使用此的產品開發的活躍,除了確保基板與壓印層之間的密接性以外,針對各種基板確保密接性亦為重要。
因此,本發明的目的在於,提供一種能夠針對各種基板確保充分的密接性之壓印用下層膜形成組成物、以及使用該壓印用下層膜形成組成物之套組、壓印用硬化性組成物、積層體、積層體的製造方法、圖案形成方法及半導體器件的製造方法。In the photoimprint method, as described above, the surface of the substrate is coated with a hardening composition for imprinting, and the surface is formed to irradiate light in a state in contact with the mold to harden the hardening composition for imprinting. Into an embossed layer. Then, the process including peeling the mold is included. During the process of peeling the mold, the imprint layer (hardened material) may be peeled from the substrate and adhered to the mold. It is considered that one of the reasons is that the adhesion between the substrate and the imprint layer is not very high compared to the adhesion between the mold and the imprint layer. In order to solve such a problem, for example, the technologies described in the aforementioned Patent Documents 2 to 5 have been proposed, thereby achieving a certain degree of resolution. However, with the expansion of the use of the imprint method and the active development of products using this, in addition to ensuring the adhesion between the substrate and the imprint layer, it is also important to ensure the adhesion to various substrates.
Therefore, an object of the present invention is to provide an underlayer film-forming composition for imprint, which can ensure sufficient adhesion to various substrates, a kit using the underlayer film-forming composition for imprint, and a hardening composition for imprint. Material, multilayer body, method for manufacturing multilayer body, pattern forming method, and method for manufacturing semiconductor device.
依上述課題,本發明人等對在壓印法中利用壓印用下層膜形成組成物之技術進行了研究。而且,發現了作為壓印用下層膜形成組成物所含有之聚合物,使用具有聚合性基及pKa低的酸性的部分結構者,藉此能夠解決上述課題。具體而言,藉由下述<1>之機構及作為其較佳之實施形態之<2>~<23>之機構解決上述課題。Based on the above-mentioned problems, the present inventors have studied a technique for forming a composition using an underlayer film for imprinting in an imprinting method. In addition, it was found that the polymer contained in the underlayer film-forming composition for imprinting can solve the above-mentioned problems by using a polymer having a polymerizable group and a low acidity partial structure. Specifically, the above-mentioned problem is solved by the following mechanism of <1> and the mechanisms of <2> to <23> which are its preferred embodiments.
<1>一種壓印用下層膜形成組成物,其包含聚合物及溶劑,上述聚合物包含源自pKa為4.0以下的單體之構成單元及聚合性基。
<2>如<1>所述之壓印用下層膜形成組成物,其中上述聚合物為丙烯酸樹脂。
<3>如<1>或<2>所述之壓印用下層膜形成組成物,其中上述聚合物的重量平均分子量為2,000以上。
<4>如<1>至<3>中任一項所述之壓印用下層膜形成組成物,其中上述聚合物所具有之聚合性基為(甲基)丙烯醯基。
<5>如<1>至<4>中任一項所述之壓印用下層膜形成組成物,其中上述聚合物所具有之源自pKa為4.0以下的單體之構成單元為源自pKa為3.0以下的單體之構成單元。
<6>如<1>至<5>中任一項所述之壓印用下層膜形成組成物,其中上述源自pKa為4.0以下的單體之構成單元具有選自包括羥基、羧基、硫代羧酸基、二硫代羧酸基、磺酸基、磷酸單酯基、磷酸二酯基及磷酸基的組群中之至少一種。
<7>如<1>至<6>中任一項所述之壓印用下層膜形成組成物,其中上述壓印用下層膜形成組成物的99.0質量%以上為溶劑。
<8>如<1>至<7>中任一項所述之壓印用下層膜形成組成物,其中上述聚合物具有含有聚合性基之構成單元。
<9>一種套組,其包含<1>至<8>中任一項所述之壓印用下層膜形成組成物及壓印用硬化性組成物。
<10>一種壓印用硬化性組成物,其用於<9>所述之套組。
<11>一種積層體,其具有基板、位於基板的表面上之由<1>至<8>中任一項所述之壓印用下層膜形成組成物所形成之下層膜及由位於上述下層膜的表面上之壓印用硬化性組成物所形成之壓印層。
<12>如<11>所述之積層體,其中
作為上述基板使用具有有機層作為最表層之基板。
<13>如<11>或<12>所述之積層體,其中
作為上述基板使用具有鹼性的層作為最表層之基板。
<14>一種積層體的製造方法,其包括:將<1>至<8>中任一項所述之壓印用下層膜形成組成物應用於基板的表面而形成壓印用下層膜之製程;及在上述下層膜的表面應用壓印用硬化性組成物之製程。
<15>如<14>所述之積層體的製造方法,其中
作為上述基板使用具有有機層作為最表層之基板。
<16>如<14>或<15>所述之積層體的製造方法,其中
作為上述基板使用具有鹼性的層作為最表層之基板。
<17>一種圖案形成方法,其包括:使用<1>至<8>中任一項所述之壓印用下層膜形成組成物在基板表面上形成下層膜之製程;在上述下層膜上應用壓印用下層膜形成組成物而形成壓印用硬化性組成物層之製程;使鑄模與上述壓印用硬化性組成物層接觸之製程;在接觸上述鑄模之狀態下對上述壓印用硬化性組成物層進行曝光之製程;及將上述鑄模從經曝光之上述壓印用硬化性組成物層剝離之製程。
<18>如<17>所述之圖案形成方法,其中
作為上述基板使用具有有機層作為最表層之基板。
<19>如<17>或<18>所述之圖案形成方法,其中
作為上述基板使用具有鹼性的層作為最表層之基板。
<20>如<17>至<19>中任一項所述之圖案形成方法,其中,藉由旋塗法將上述壓印用下層膜形成組成物應用於基板表面。
<21>如<17>至<20>中任一項所述之圖案形成方法,其中,藉由噴墨法將上述壓印用硬化性組成物應用於下層膜上。
<22>一種半導體器件的製造方法,其包括<17>至<21>中任一項所述之圖案形成方法。
[發明效果]<1> An underlayer film-forming composition for imprint, comprising a polymer and a solvent, the polymer including a constituent unit derived from a monomer having a pKa of 4.0 or less and a polymerizable group.
<2> The underlayer film-forming composition for imprinting according to <1>, wherein the polymer is an acrylic resin.
<3> The underlayer film-forming composition for imprinting according to <1> or <2>, wherein the polymer has a weight average molecular weight of 2,000 or more.
<4> The underlayer film-forming composition for imprinting according to any one of <1> to <3>, wherein the polymerizable group of the polymer is a (meth) acrylfluorenyl group.
<5> The underlayer film-forming composition for imprinting according to any one of <1> to <4>, wherein the constituent unit of the polymer derived from a monomer having a pKa of 4.0 or less is derived from pKa A constituent unit of a monomer of 3.0 or less.
<6> The underlayer film-forming composition for imprinting according to any one of <1> to <5>, wherein the constituent unit derived from the monomer having a pKa of 4.0 or less has a member selected from the group consisting of a hydroxyl group, a carboxyl group, and sulfur At least one of a group of a carboxylic acid group, a dithiocarboxylic acid group, a sulfonic acid group, a phosphate monoester group, a phosphate diester group, and a phosphate group.
<7> The underlayer film-forming composition for imprinting according to any one of <1> to <6>, wherein 99.0% by mass or more of the underlayer film-forming composition for imprinting is a solvent.
<8> The underlayer film-forming composition for imprinting according to any one of <1> to <7>, wherein the polymer has a structural unit containing a polymerizable group.
<9> A set comprising the underlayer film-forming composition for imprinting and the curable composition for imprinting according to any one of <1> to <8>.
<10> A curable composition for imprinting, which is used for the kit according to <9>.
<11> A laminated body comprising a substrate, an underlying film formed of the imprinting underlying film forming composition according to any one of <1> to <8>, and a substrate located on the surface of the substrate, and An embossed layer formed by a curable composition for imprint on the surface of a film.
<12> The laminated body according to <11>, wherein a substrate having an organic layer as an outermost layer is used as the substrate.
<13> The laminated body according to <11> or <12>, wherein the substrate having a basic layer is used as the substrate on the outermost surface as the substrate.
<14> A method for manufacturing a laminated body, comprising: a process for applying the underlayer film-forming composition according to any one of <1> to <8> to the surface of a substrate to form an underlayer film for imprinting; ; And a process of applying a hardening composition for imprint on the surface of the above-mentioned underlayer film.
<15> The method for producing a laminated body according to <14>, wherein a substrate having an organic layer as an outermost layer is used as the substrate.
<16> The method for producing a multilayer body according to <14> or <15>, wherein the substrate having a basic layer is used as the outermost substrate as the substrate.
<17> A pattern forming method, comprising: a process for forming an underlayer film on a substrate surface using the underlayer film forming composition for imprinting according to any one of <1> to <8>; Process for forming a lower-layer film-forming composition for imprint to form a hardenable composition layer for imprinting; process for bringing a mold into contact with the hardenable composition layer for imprinting; hardening the above-mentioned imprinting state while in contact with the mold A process of exposing the conductive composition layer; and a process of peeling the mold from the exposed curable composition layer for imprinting.
<18> The pattern forming method according to <17>, wherein a substrate having an organic layer as an outermost layer is used as the substrate.
<19> The pattern forming method according to <17> or <18>, wherein the substrate having a basic layer is used as the substrate on the outermost surface as the substrate.
<20> The pattern forming method according to any one of <17> to <19>, wherein the underlayer film-forming composition for imprint is applied to a substrate surface by a spin coating method.
<21> The pattern forming method according to any one of <17> to <20>, wherein the curable composition for imprint is applied to an underlayer film by an inkjet method.
<22> A method for manufacturing a semiconductor device, comprising the pattern forming method according to any one of <17> to <21>.
[Inventive effect]
藉由本發明的壓印用下層膜形成組成物,能夠針對各種基板確保足夠的密接性。又,能夠提供一種使用該壓印用下層膜形成組成物之套組、壓印用硬化性組成物、積層體、積層體的製造方法、圖案形成方法及半導體器件的製造方法。The underlayer film-forming composition for imprint of the present invention can ensure sufficient adhesion to various substrates. In addition, it is possible to provide a kit using the underlayer film-forming composition for imprint, a curable composition for imprint, a laminate, a method for producing a laminate, a method for forming a pattern, and a method for producing a semiconductor device.
以下,對本發明的內容進行詳細說明。再者,在本說明書中,“~”係指以將記載於其前後之數值作為下限值及上限值而包含之含義使用。
在本說明書中,“(甲基)丙烯酸酯”表示丙烯酸酯及甲基丙烯酸酯。
在本說明書中,“壓印”係指較佳為1nm~10mm尺寸的圖案轉印,更佳為係指大約10nm~100μm尺寸的圖案轉印(奈米壓印)。
在本說明書中的基團(原子團)的標記中,未記有取代及未經取代之標記為包含不具有取代基者,並且包含具有取代基之者。例如,“烷基”不僅包含不具有取代基之烷基(未經取代烷基),還包含具有取代基之烷基(取代烷基)。
在本說明書中,“光”不僅包含紫外、近紫外、遠紫外、可視、紅外等區域的波長的光或電磁波,還包含放射線。放射線例如包含微波、電子束、極紫外線(EUV)、X射線。又,還能夠使用248nm準分子雷射、193nm準分子雷射、172nm準分子雷射等雷射光。該等光可使用通過濾光器之單色光(單一波長光),亦可以是具有複數個不同波長之光(複合光)。
本發明中的重量平均分子量(Mw)並無特別敘述時,係指由凝膠滲透色譜法(GPC)測量者。
本發明中的溫度並無特別敘述時,設為23℃。
本發明中的沸點係指1個大氣壓(1atm=1013.25hPa)中的沸點。Hereinafter, the content of this invention is demonstrated in detail. In addition, in this specification, "-" means using the value contained before and after as a lower limit value and an upper limit value.
In this specification, "(meth) acrylate" means an acrylate and a methacrylate.
In this specification, "imprint" means a pattern transfer having a size of preferably 1 nm to 10 mm, and more preferably means a pattern transfer having a size of approximately 10 nm to 100 µm (nano imprint).
In the description of the group (atomic group) in the present specification, the unrepresented and unsubstituted marks include those having no substituent and those having a substituent. For example, "alkyl" includes not only alkyl groups (unsubstituted alkyl groups) having no substituents, but also alkyl groups (substituted alkyl groups) having substituents.
In this specification, "light" includes not only light or electromagnetic waves with wavelengths in the ultraviolet, near-ultraviolet, far-ultraviolet, visible, or infrared regions, but also radiation. The radiation includes, for example, microwaves, electron beams, extreme ultraviolet (EUV), and X-rays. In addition, laser light such as a 248 nm excimer laser, a 193 nm excimer laser, and a 172 nm excimer laser can also be used. The light may be a monochromatic light (single-wavelength light) passing through a filter or a light (composite light) having a plurality of different wavelengths.
When the weight average molecular weight (Mw) in the present invention is not specifically described, it refers to a person measured by gel permeation chromatography (GPC).
When the temperature in the present invention is not particularly described, it is set to 23 ° C.
The boiling point in the present invention refers to the boiling point in 1 atmosphere (1atm = 1013.25hPa).
本發明的壓印用下層膜形成組成物的特徵為,其包含聚合物及溶劑,該聚合物包含原子pKa為4.0以下的單體之構成單元及聚合性基(本說明書中,將該聚合物稱為特定聚合物)。藉此,能夠實現壓印層與基板的良好的密接性。尤其,藉由其較佳的實施形態,不依賴於基板類型,能夠實現低缺陷的壓印程序。The underlayer film-forming composition for imprint of the present invention is characterized in that it includes a polymer and a solvent, and the polymer includes a constituent unit of a monomer having an atom pKa of 4.0 or less and a polymerizable group (in this specification, the polymer Called a specific polymer). This makes it possible to achieve good adhesion between the imprint layer and the substrate. In particular, with its preferred embodiment, it is possible to realize a low-defect imprinting program without depending on the type of substrate.
<特定聚合物>
本發明中所使用之特定聚合物包含原子pKa為4.0以下的單體之構成單元。
單體的pKa係3.0以下為較佳,2.5以下為更佳,2.0以下為進一步較佳。作為下限值,實際上為-3.0以上,進而為1.0以上。< Specific polymer >
The specific polymer used in the present invention includes a constituent unit of a monomer having an atom pKa of 4.0 or less.
The pKa of the monomer is preferably 3.0 or less, more preferably 2.5 or less, and even more preferably 2.0 or less. The lower limit is actually -3.0 or more, and further 1.0 or more.
在本說明書中,pKa表示水溶液中的pKa,設為藉由後述實施例所記載之方法計算而得之值。In this specification, pKa means pKa in an aqueous solution, and it is set to the value calculated by the method described in the Example mentioned later.
原子pKa4.0以下的單體的構成單元包含選自包括羥基(醇性羥基、酚性羥基)、羧基、醯胺基、醯亞胺基、脲基、胺基甲酸酯基、氰基、醚基(較佳為聚伸烷氧基)、環狀醚基、內酯基、磺醯基、磺酸基、磺醯胺基、磺醯亞胺基、磷酸基、磷酸酯基及丁腈基的組群中之至少一種(以下,有時簡稱為“酸基”)為較佳。其中,具有選自包括羥基、羧基、硫代羧酸基、二硫代羧酸基、磺酸基、磷酸單酯基、磷酸二酯基及磷酸基的組群中之至少一種為較佳,選自包括磺酸基、磷酸單酯基、磷酸二酯基、及磷酸基的組群中之至少一種進一步較佳。A constituent unit of a monomer having an atom pKa 4.0 or lower includes a hydroxyl group (alcoholic hydroxyl group, phenolic hydroxyl group), a carboxyl group, amidino group, amidino group, a urea group, a carbamate group, a cyano group, Ether group (preferably polyalkyleneoxy), cyclic ether group, lactone group, sulfofluorenyl group, sulfonyl group, sulfonamido group, sulfonamido group, phosphate group, phosphate group and butyronitrile At least one of the groups (hereinafter, sometimes simply referred to as "acid group") is preferred. Among them, it is preferable to have at least one selected from the group consisting of a hydroxyl group, a carboxyl group, a thiocarboxylic acid group, a dithiocarboxylic acid group, a sulfonic acid group, a phosphate monoester group, a phosphodiester group, and a phosphate group. At least one selected from the group consisting of a sulfonic acid group, a phosphate monoester group, a phosphodiester group, and a phosphate group is further preferred.
pKa4.0以下的單體中,分子量係50以上為較佳,100以上為更佳,150以上為進一步較佳,200以上為更進一步較佳。又,分子量係1000以下為較佳,800以下為更佳,以下為進一步較佳,600以下為更進一步較佳。藉由設為該種範圍,能夠更有效地發揮製膜性的提高及密接性的提高這樣的效果。Among the monomers having a pKa of 4.0 or less, a molecular weight of 50 or more is preferable, 100 or more is more preferable, 150 or more is further preferable, and 200 or more is further preferable. In addition, the molecular weight is preferably 1,000 or less, more preferably 800 or less, even more preferably below, and still more preferably 600 or less. By setting it as such a range, the effect of the improvement of film formability and the improvement of adhesiveness can be exhibited more effectively.
作為pKa4.0以下的單體所具有之聚合性基,可舉出(甲基)丙烯醯基、環氧基、氧雜環丁烷基、羥甲基、羥甲基醚基、乙烯基醚基等。從聚合容易性的觀點而言,(甲基)丙烯醯基為特佳。本說明書中,將在此規定且例示之聚合性基團稱作聚合性基團Ps。Examples of the polymerizable group possessed by the monomers having a pKa 4.0 or lower include (meth) acrylfluorenyl, epoxy, oxetanyl, methylol, methylol ether, and vinyl ether. Base etc. From the viewpoint of ease of polymerization, a (meth) acrylfluorenyl group is particularly preferable. In the present specification, the polymerizable group defined and exemplified herein is referred to as a polymerizable group Ps.
pKa4.0以下的單體具有由酸基-連接基團-聚合性基表示之結構為較佳。此處的連接基團例示後述連接基團L。It is preferable that the monomer having pKa 4.0 or less has a structure represented by an acid group-linking group-polymerizable group. Here, the linking group is exemplified by a linking group L described later.
特定聚合物中,所有構成單元中,源自pKa4.0以下的單體之構成單元的比例以將各構成單元作為單體時的莫耳比基準,0.5質量%以上為較佳,1質量%以上為更佳,3質量%以上為進一步較佳。又,作為上限值,50質量%以下為較佳,30質量%以下為更佳,15質量%以下為進一步較佳。
特定聚合物可以僅包含一種源自pKa4.0以下的單體的構成單元,亦可以包含2種以上。包含2種以上時,總計量成為上述範圍為較佳。In the specific polymer, the proportion of the constituent units derived from monomers having a pKa of 4.0 or less in all the constituent units is based on the mole ratio when each constituent unit is used as a monomer, preferably 0.5% by mass or more, and 1% by mass. The above is more preferable, and 3% by mass or more is more preferable. The upper limit is preferably 50% by mass or less, more preferably 30% by mass or less, and even more preferably 15% by mass or less.
The specific polymer may include only one type of constituent unit derived from a monomer having a pKa of 4.0 or less, or may include two or more types of constituent units. When two or more kinds are included, the total measurement is preferably within the above range.
特定聚合物具有聚合性基。
聚合性基可以鍵結於特定聚合物的側鏈,亦可以鍵結於末端。在本發明中,特定聚合物具有含有聚合性基之構成單元為較佳。又,關於特定聚合物,源自上述pKa4.0以下的單體之構成單元亦可以具有聚合性基,亦可以別於源自pKa4.0以下的單體之構成單元,包含具有聚合性基之構成單元,別於源自pKa4.0以下的單體之構成單元,包含具有聚合性基之構成單元為較佳。
聚合性基的具體例,例示聚合性基Ps,尤其(甲基)丙烯醯基為較佳。聚合性基以編入構成單元之形態導入到聚合物為較佳。上述特定聚合物具有聚合性基,從而壓印用下層膜形成交聯結構,能夠防止剝離時的下層膜的凝聚破壞,並且能夠確保更有效果的密接性。
特定聚合物中,所有構成單元中,具有聚合性基之構成單元的比例以將各構成單元作為單體時的莫耳比基準,50質量%以上為較佳,70質量%以上為更佳,85質量%以上為進一步較佳。又,作為上限值,99.5質量%以下為較佳,99質量%以下為更佳,97質量%以下為進一步較佳。
特定聚合物可以僅包含一種具有聚合性基之構成單元,亦可以包含2種以上。包含2種以上時,總計量成為上述範圍為較佳。The specific polymer has a polymerizable group.
The polymerizable group may be bonded to a side chain of a specific polymer, or may be bonded to a terminal. In the present invention, the specific polymer preferably has a structural unit containing a polymerizable group. In addition, as for the specific polymer, the constituent unit derived from the monomer having a pKa 4.0 or lower may have a polymerizable group, or may be different from the constituent unit derived from a monomer having a pKa 4.0 or lower, including a polymerizable group. The constituent unit is different from a constituent unit derived from a monomer having a pKa of 4.0 or lower, and it is preferable to include a constituent unit having a polymerizable group.
Specific examples of the polymerizable group include a polymerizable group Ps, and a (meth) acrylfluorenyl group is particularly preferred. The polymerizable group is preferably introduced into the polymer in the form of a structural unit. The above-mentioned specific polymer has a polymerizable group, so that the underlayer film for imprinting forms a crosslinked structure, can prevent agglomeration and destruction of the underlayer film at the time of peeling, and can ensure more effective adhesion.
In the specific polymer, the proportion of the constituent units having a polymerizable group in all the constituent units is based on a molar ratio when each constituent unit is used as a monomer, preferably 50% by mass or more, and more preferably 70% by mass or more. 85 mass% or more is more preferable. The upper limit is preferably 99.5 mass% or less, more preferably 99 mass% or less, and still more preferably 97 mass% or less.
The specific polymer may contain only one kind of structural unit having a polymerizable group, or may contain two or more kinds. When two or more kinds are included, the total measurement is preferably within the above range.
特定聚合物中,所有構成單元中,具有酸基之構成單元與具有聚合性基之構成單元的合計比例,以將各構成單元設為單體時的莫耳比基準計,90質量%以上為較佳,95質量%以上為更佳,97質量%以上為進一步較佳。上限可以為100質量%。In the specific polymer, the total ratio of the constituent units having an acid group to the constituent units having a polymerizable group in all the constituent units is 90% by mass or more based on the molar ratio when each constituent unit is a monomer. Preferably, 95 mass% or more is more preferable, and 97 mass% or more is more preferable. The upper limit may be 100% by mass.
特定聚合物係選自包括丙烯酸樹脂、酚醛清漆樹脂、環氧樹脂、聚胺酯樹脂、酚醛樹脂、聚酯樹脂及三聚氰胺樹脂的組群中之至少一種為較佳,丙烯酸樹脂、聚酯樹脂及酚醛清漆樹脂的組群中之至少一種為更佳,丙烯酸樹脂為進一步較佳。The specific polymer is preferably at least one selected from the group consisting of acrylic resin, novolac resin, epoxy resin, polyurethane resin, phenol resin, polyester resin, and melamine resin. Acrylic resin, polyester resin, and novolac At least one of the resin groups is more preferable, and acrylic resin is more preferable.
丙烯酸樹脂一般係指丙烯酸、丙烯酸酯、甲基丙烯酸酯的聚合物或對以該些作為主要成分且能夠與該些共聚的單體、例如苯乙烯、乙烯基甲基、乙酸乙烯、丙烯腈進行共聚之樹脂。丙烯酸樹脂能夠使丙烯酸系的單體加成聚合而合成。加成聚合藉由自由基、陽離子、陰離子引起,分別稱作自由基聚合、陽離子聚合、陰離子聚合。工業上利用最多的是自由基聚合。作為丙烯酸系單體,可舉出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸正己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯。Acrylic resins generally refer to polymers of acrylic acid, acrylates, and methacrylates or to monomers that have these as the main component and can be copolymerized with them, such as styrene, vinyl methyl, vinyl acetate, and acrylonitrile. Copolymer resin. The acrylic resin can be synthesized by addition polymerization of an acrylic monomer. Addition polymerization is caused by free radicals, cations, and anions, and is called radical polymerization, cationic polymerization, and anionic polymerization, respectively. The most industrially used is free radical polymerization. Examples of the acrylic monomer include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and n-butyl (meth) acrylate , Isobutyl (meth) acrylate, tert-butyl (meth) acrylate, n-hexyl (meth) acrylate, octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, (meth) ) Lauryl acrylate.
酚醛樹脂藉由作為三官能性單體之酚(取代酚有時還有雙官或單官能性的情況)與作為雙官能性單體的甲醛在酸或鹼性觸媒下的反應而生成。將藉由酸觸媒獲得者稱作酚醛清漆(novolac)、將藉由鹼性觸媒獲得者稱作可溶酚醛樹脂(resol)。可溶酚醛樹脂藉由加熱而自硬化。酚醛清漆若與如六亞甲四胺(HMTA)的硬化劑一同加熱則硬化。作為原料,可舉出酚、鄰甲酚、間甲酚、對甲酚、2,3-二甲苯酚、2,4-二甲苯酚、2,5-二甲苯酚、2,6-二甲苯酚、3,4-二甲苯酚、3,5-二甲苯酚、間苯二酚、對叔丁基苯酚、對壬基苯酚、雙酚等。
三聚氰胺樹脂係藉由三聚氰胺(2,4,6-三胺基-1,3,5-三)與甲醛的加成縮合獲得之熱硬化性合成樹脂。與脲樹脂等一同將胺基(-NH2)設為反應基團,因此可計為胺基樹脂的1個。透明度、硬度、著色性、耐熱性、耐電弧性等優異,因此具有成型材料、裝飾板、塗料等幅度較廣的用途。三聚氰胺以胺基作為反應基團並與甲醛反應而成為羥甲基三聚氰胺。羥甲基三聚氰胺從單羥甲基三聚氰胺至六羥甲基三聚氰胺為止,所有的取代體可容易以混合物獲得。Phenolic resins are produced by the reaction of phenol as a trifunctional monomer (the substituted phenol may be difunctional or monofunctional in some cases) and formaldehyde as a bifunctional monomer under an acid or basic catalyst. The one obtained by the acid catalyst is referred to as novolac, and the one obtained by the alkaline catalyst is referred to as resol. The soluble phenolic resin is self-hardened by heating. Novolac is hardened when heated with a hardener such as hexamethylenetetramine (HMTA). Examples of the raw materials include phenol, o-cresol, m-cresol, p-cresol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, and 2,6-xylenol. Phenol, 3,4-xylenol, 3,5-xylenol, resorcinol, p-tert-butylphenol, p-nonylphenol, bisphenol, etc.
Melamine resin is a thermosetting synthetic resin obtained by the addition and condensation of melamine (2,4,6-triamine-1,3,5-tri) and formaldehyde. Since an amine group (-NH2) is used as a reactive group together with a urea resin or the like, it can be counted as one of the amine resin. It is excellent in transparency, hardness, colorability, heat resistance, arc resistance, etc., and therefore has a wide range of uses such as molding materials, decorative boards, and coatings. Melamine uses an amine group as a reactive group and reacts with formaldehyde to form methylolmelamine. Methylolmelamine From monomethylolmelamine to hexamethylolmelamine, all substituents can be easily obtained as a mixture.
環氧樹脂為在1分子中具有2個以上環氧基之化合物的總稱,通常,即使其自身可加熱亦不會硬化,且為了獲得硬化物需要硬化劑或觸媒,。藉由添加硬化劑進行加成反應而成為不溶不融的熱硬化性樹脂,因此不會發生揮發物且加工性良好。作為硬化劑能夠使用各種第1胺、第2胺、酸酐、酚醛樹脂。環氧樹脂的製造以基於具有活性氫之化合物與環氧氯丙烷的反應及具有雙鍵之化合物的氧化之2個方法進行。作為具有活性氫之化合物,可舉出2,2-雙(4-羥基苯基)丙烷(別名雙酚A)、4,4’-二羥基二苯基甲烷(別名雙酚F)、2,2-雙(3,5-二溴-4-羥基苯基)丙烷(別名四溴雙酚A)、鄰甲酚、六氫鄰苯二甲酸、間胺基苯酚、對胺基苯酚。作為其他環氧樹脂原料,可使用酚醛清漆型酚醛樹脂、二聚酸、聚丁二烯、大豆油、脂環式化合物、四氫鄰苯二甲酸、對羥基安息香酸、間苯二甲胺、乙內醯脲化合物、氰尿酸等。An epoxy resin is a general term for a compound having two or more epoxy groups in one molecule. Generally, it does not harden even if it can be heated by itself, and a hardener or catalyst is required to obtain a cured product. Addition of a hardening agent causes an addition reaction to result in an insoluble and infusible thermosetting resin, so that volatiles do not occur and processability is good. As the hardener, various first amines, second amines, acid anhydrides, and phenol resins can be used. The production of an epoxy resin is performed by two methods based on the reaction of a compound having active hydrogen with epichlorohydrin and the oxidation of a compound having a double bond. Examples of the compound having active hydrogen include 2,2-bis (4-hydroxyphenyl) propane (alias bisphenol A), 4,4'-dihydroxydiphenylmethane (alias bisphenol F), 2, 2-bis (3,5-dibromo-4-hydroxyphenyl) propane (also known as tetrabromobisphenol A), o-cresol, hexahydrophthalic acid, m-aminophenol, p-aminophenol. As other epoxy resin raw materials, novolac-type phenol resins, dimer acids, polybutadiene, soybean oil, alicyclic compounds, tetrahydrophthalic acid, p-hydroxybenzoic acid, m-xylylenediamine, Hydantoin compound, cyanuric acid, etc.
聚酯樹脂藉由二元酸與二元醇的縮聚反應獲得,主鏈具有酯鍵(-COO-)。作為二元酸,可舉出對苯二甲酸、萘二羧酸、環己烷二羧酸、己二酸、順丁烯二酸酐、富馬酸、伊康酸等。作為多元酸多元醇,經常使用丙二醇、乙二醇、二乙二醇。其中,其他二元醇亦藉由樹脂的性質適當區分使用。作為通常以塑膠材料使用之聚酯,除了PET(聚對苯二甲酸乙二醇酯)之外,有將PET的乙二醇成分替換成四亞甲基二醇之聚對苯二甲酸二丁酯(PBT)或被環己烷二甲醇取代之聚對苯二甲酸環己烷二甲酯(PCT),還已知有將對苯二甲酸成分替換成2,6-萘二羧酸之聚2,6-萘二甲酸乙二酯(PEN)等。Polyester resin is obtained by the polycondensation reaction of a dibasic acid and a diol, and the main chain has an ester bond (-COO-). Examples of the dibasic acid include terephthalic acid, naphthalenedicarboxylic acid, cyclohexanedicarboxylic acid, adipic acid, maleic anhydride, fumaric acid, and itaconic acid. As the polybasic acid polyol, propylene glycol, ethylene glycol, and diethylene glycol are often used. Among them, other glycols are also appropriately distinguished and used according to the properties of the resin. As a polyester commonly used as a plastic material, in addition to PET (polyethylene terephthalate), there is a polybutylene terephthalate in which the ethylene glycol component of PET is replaced with tetramethylene glycol. Esters (PBT) or cyclohexane dimethyl terephthalate (PCT) substituted with cyclohexanedimethanol. Also known are polymers in which terephthalic acid is replaced with 2,6-naphthalenedicarboxylic acid. 2,6-naphthalene dicarboxylate (PEN), etc.
聚胺甲酸酯(PU)係具有藉由聚異氰酸與多元醇的反應獲得之胺基甲酸酯鍵(胺基甲酸酯鍵)之一群聚合物。反應之任何化合物亦為雙官能性的情況下,可獲得現狀的熱塑性PU,至少一者為3官能性以上的情況或引起側鏈反應之情況下形成網狀結構的PU。Polyurethane (PU) is a group of polymers having a urethane bond (urethane bond) obtained by the reaction of polyisocyanate and a polyol. In the case where any of the compounds to be reacted is also difunctional, a thermoplastic PU can be obtained as it is, and a PU having a network structure is formed when at least one of the compounds is trifunctional or more or a side chain reaction is caused.
關於上述各樹脂,還能夠參閱宮坂啟象等編著“塑膠詞典”(Asakura Publishing Co.,Ltd.)等。Regarding the resins mentioned above, please refer to "Asakura Publishing Co., Ltd." edited by Kei Miyasaka and others.
特定聚合物具有由下述式(1)~式(6)中的任一個表示之構成單元表示之主鏈為較佳。
[化學式1]
R1
為氫原子或甲基,甲基為較佳。
XR
為氧原子或NH,氧原子為較佳。
n為1~3的整數,1或2為較佳,1為更佳。
m為1~5的整數,1或2為較佳,1為更佳。
R為成為pKa4.0以下之部分結構(酸基)為較佳。式(1)~式(6)中的R為2個以上時,複數個R可相互鍵結而形成環。酸基的較佳者與上述pKa4.0以下的單體所具有之酸基相同。
在式(1)~(6)中,主鏈或苯環在發揮本發明的效果之範圍內可具有後述之取代基T。又,R或取代基T亦可與主鏈鍵結而形成環。The specific polymer preferably has a main chain represented by a constitutional unit represented by any one of the following formulae (1) to (6).
[Chemical Formula 1]
R 1 is a hydrogen atom or a methyl group, and a methyl group is preferred.
X R is an oxygen atom or NH, and an oxygen atom is preferred.
n is an integer of 1 to 3, 1 or 2 is preferable, and 1 is more preferable.
m is an integer of 1 to 5, 1 or 2 is preferable, and 1 is more preferable.
R is preferably a partial structure (acid group) of pKa 4.0 or less. When R in the formulae (1) to (6) is two or more, plural Rs may be bonded to each other to form a ring. The preferred acid group is the same as the acid group possessed by the monomer having a pKa of 4.0 or lower.
In the formulae (1) to (6), the main chain or the benzene ring may have a substituent T described later within a range in which the effects of the present invention are exhibited. In addition, R or a substituent T may be bonded to the main chain to form a ring.
上述特定聚合物係共聚物亦較佳。共聚合成分與上述式(1)~(6)的構成單元一同包含由下述式(1-1)~(1-6)中的任一個表示之構成單元的至少1種為較佳。
[化學式2]
R1
為氫原子或甲基,甲基為較佳。
XR
為氧原子或NH,氧原子為較佳。
n為1~3的整數,1或2為較佳,1為更佳。
m為1~5的整數,1或2為較佳,1為更佳。
R2
為分別獨立地包含聚合性基之取代基。R2
中所含之聚合性基為上述Ps為較佳。式(1-1)~式(1-6)中的R2
為2個以上時,複數個R2
可相互鍵結而形成環。又,在發揮本發明的效果之範圍內,在式(1-1)~式(1-6)的主鏈及苯環可由取代基T取代。
作為R2
,下述式(T2)為較佳。R2
的式量為80以上1000以下為較佳,100以上800以下為更佳,150以上600以下為進一步較佳。
-(L4
)n6
-(P)n7
……(T2)
L4
為下述連接基L,其中,伸烷基、伸芳基、(低聚)伸烷氧基、羰基、氧原子、該些組合之連接基為較佳。n6為0或1,1為較佳。P為包含聚合性基之基團,Ps或Ps與由連結基團L構成之基團為較佳。n7為1~6的整數,1或2為較佳。再者,n7為2以上時,L4
成為3價以上的連接基即可,例如,可舉出包含3價以上的烷烴結構的基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯烴結構的基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)或芳基結構的基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)之連接基。再者,(低聚)伸烷氧基可為單伸烷氧基亦可為低聚伸烷氧基。L4
的連接原子數為1~24為較佳,1~12為更佳,1~6為進一步較佳。
特定聚合物包含由式(1)表示之構成單元,為共聚物時,包含由式(1-1)表示之構成單元為較佳。關於式(2)~式(6),亦同樣地分別包含由式(1-2)~式(1-6)表示之構成單元為較佳。The specific polymer-based copolymers described above are also preferable. It is preferable that the copolymerization component includes at least one of the structural units represented by any one of the following formulae (1-1) to (1-6) together with the structural units of the formulae (1) to (6).
[Chemical Formula 2]
R 1 is a hydrogen atom or a methyl group, and a methyl group is preferred.
X R is an oxygen atom or NH, and an oxygen atom is preferred.
n is an integer of 1 to 3, 1 or 2 is preferable, and 1 is more preferable.
m is an integer of 1 to 5, 1 or 2 is preferable, and 1 is more preferable.
R 2 is a substituent each independently including a polymerizable group. It is preferable that the polymerizable group contained in R 2 is the aforementioned Ps. When R 2 in Formulas (1-1) to (1-6) is two or more, plural R 2 may be bonded to each other to form a ring. The main chain and the benzene ring in the formula (1-1) to the formula (1-6) may be substituted with the substituent T within the range where the effects of the present invention are exhibited.
As R 2 , the following formula (T2) is preferred. The formula of R 2 is more preferably 80 or more and 1000 or less, more preferably 100 or more and 800 or less, and more preferably 150 or more and 600 or less.
-(L 4 ) n6- (P) n7 …… (T2)
L 4 is the following linking group L, of which alkylene, arylene, (oligomeric) alkoxy, carbonyl, oxygen atom, and a combination of these are preferred. n6 is 0 or 1, and 1 is preferred. P is a group containing a polymerizable group, and Ps or Ps and a group consisting of a linking group L are preferable. n7 is an integer of 1 to 6, and 1 or 2 is preferable. In addition, when n7 is 2 or more, L 4 may be a trivalent or more valent linking group. For example, a group containing a trivalent or more alkane structure (carbon number of 1 to 12 is preferred, and 1 to 6 is more preferred) 1 to 3 are further preferred), an olefin structured base (carbon number 2 to 12 is preferred, 2 to 6 is more preferred, 2 to 3 is more preferred), or an aryl structured base (carbon number 6 22 is more preferred, 6 to 18 is more preferred, and 6 to 10 is more preferred. Furthermore, the (oligomeric) alkoxy group may be a mono-alkoxy group or an oligo-alkoxy group. The number of connected atoms of L 4 is preferably from 1 to 24, more preferably from 1 to 12, and even more preferably from 1 to 6.
The specific polymer contains a structural unit represented by the formula (1), and when it is a copolymer, it is preferable to include a structural unit represented by the formula (1-1). Regarding formulas (2) to (6), it is also preferable to include constituent units represented by formulas (1-2) to (1-6), respectively.
特定聚合物還包含沒有酸基及聚合性基團之構成單元(有時稱作“其他構成單元”)亦較佳。其他構成單元具有上述式(1-1)~(1-6)的骨架為較佳。其中,取代基R2
成為沒有酸基及聚合性基之取代基R3
。在發揮本發明的效果之範圍內,其他主鏈或苯環還可由取代基T取代。又,R3
或取代基T可與主鏈鍵結而形成環。
R3
為下述式(T3)為較佳。R3
的式量為80以上1000以下為較佳,100以上800以下為更佳,150以上600以下為進一步較佳。
-(L5
)n8
-(T1)n9
……(T3)
L5
為後述連接基L,其中,伸烷基、伸芳基、(低聚)伸烷氧基、羰基、氧原子、該些組合之連接基為較佳。L5
的連接原子數為1~24為較佳,1~12為更佳,1~6為進一步較佳。n8為0或1。T1
為後述取代基T,其中,有時被鹵素原子取代之烷基、有時被鹵素原子取代之芳基、有時被鹵素原子取代之芳基烷基為較佳。n9為1~6的整數,1或2為較佳。n9為2以上時,L5
成為3價以上的連接基即可,例如,可舉出包含3價以上的烷烴結構的基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯烴結構的基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)或芳基結構的基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)之連接基。It is also preferable that the specific polymer further includes a constitutional unit (sometimes referred to as "another constitutional unit") without an acid group and a polymerizable group. It is preferable that the other constituent units have a skeleton of the above formulae (1-1) to (1-6). Wherein the substituent R 2 does not become an acid group and a polymerizable group of the substituent group R 3. As long as the effect of the present invention is exerted, other main chains or benzene rings may be substituted with a substituent T. R 3 or substituent T may be bonded to the main chain to form a ring.
R 3 is preferably represented by the following formula (T3). The formula of R 3 is more preferably 80 or more and 1000 or less, more preferably 100 or more and 800 or less, and more preferably 150 or more and 600 or less.
-(L 5 ) n8- (T1) n9 …… (T3)
L 5 is a linker L described later, and among them, alkylene, aryl, (oligomeric) alkoxy, carbonyl, oxygen atom, and a combination of these are preferred. The number of connected atoms of L 5 is preferably from 1 to 24, more preferably from 1 to 12, and even more preferably from 1 to 6. n8 is 0 or 1. T 1 is a substituent T described below. Among them, an alkyl group substituted with a halogen atom, an aryl group substituted with a halogen atom, and an arylalkyl group substituted with a halogen atom are preferred. n9 is an integer of 1 to 6, and 1 or 2 is preferable. When n9 is 2 or more, L 5 may be a trivalent or more linking group. For example, a group containing an alkane structure of trivalent or more (a carbon number of 1 to 12 is preferred, 1 to 6 is more preferred, 1 ~ 3 is further preferred), a base of an olefin structure (2 to 12 carbons is preferred, 2 to 6 is more preferred, 2 to 3 is more preferred), or a base of an aryl structure (6 to 22 carbons is Preferably, 6 to 18 is more preferred, and 6 to 10 is even more preferred) a linking group.
作為取代基T,可舉出烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、芳基烷基(碳數7~21為較佳,7~15為更佳,7~11為進一步較佳)、烯基(碳數2~24為較佳,2~12為更佳,2~6為進一步較佳)、炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、羥基、胺基(碳數0~24為較佳,0~12為更佳,0~6為進一步較佳)、硫醇基、羧基、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、雜芳基(碳數1~22為較佳,1~16為更佳,1~12為進一步較佳)、烷氧基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳氧基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、醯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、醯氧基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳醯基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、芳醯氧基(碳數7~23為較佳,7~19為更佳,7~11為進一步較佳)、胺甲醯基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、胺磺醯基(碳數0~12為較佳,0~6為更佳,0~3為進一步較佳)、磺酸基、烷基磺醯基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、芳基磺醯基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、雜環基(碳數1~12為較佳,1~8為更佳,2~5為進一步較佳、包含5員環或6員環為較佳)、(甲基)丙烯醯基、(甲基)丙烯醯氧基、鹵素原子(例如,氟原子、氯原子、溴原子、碘原子)、氧代基(=O)、亞胺基(=NRN
)、次烷基(=C(RN
)2
)等。
RN
為氫原子、烷基(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳),烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、雜芳基(碳數1~22為較佳,1~16為更佳,1~12為進一步較佳),其中,氫原子、甲基、乙基或丙基為較佳。RN
在發揮本發明的效果之範圍內還可以具有由取代基T規定之各基團。
各取代基上所含之烷基部位、烯基部位及炔基部位可為鏈狀、環狀,亦可為直鏈、分支。上述取代基T為能夠獲得取代基之基團時,還可具有取代基T。例如,烷基可成為鹵化烷基,亦可成為(甲基)丙烯醯氧基烷基、胺基烷基或羧基烷基。Examples of the substituent T include an alkyl group (carbon number 1 to 24 is preferred, 1 to 12 is more preferred, and 1 to 6 is more preferred), and an arylalkyl group (carbon number 7 to 21 is preferred, 7 to 15 are more preferred, 7 to 11 are further preferred), alkenyl (2 to 24 carbons are preferred, 2 to 12 are more preferred, 2 to 6 are more preferred), alkynyl (2 to 6 carbons) -12 is preferred, 2-6 is more preferred, 2-3 is more preferred), hydroxyl and amine groups (carbon number 0-24 is preferred, 0-12 is more preferred, 0-6 is further preferred ), Thiol group, carboxyl group, aryl group (carbon number 6 to 22 is preferred, 6 to 18 is more preferred, 6 to 10 is more preferred), heteroaryl group (carbon number 1 to 22 is preferred, 1 -16 is more preferred, 1-12 is further preferred), alkoxy (carbon number 1-12 is preferred, 1-6 is more preferred, 1-3 is further preferred), aryloxy (carbon number 6 to 22 is preferred, 6 to 18 is more preferred, 6 to 10 is further preferred), fluorenyl (carbon number 2 to 12 is preferred, 2 to 6 is more preferred, 2 to 3 is further preferred) , Fluorenyl group (carbon number 2-12 is preferred, 2-6 is more preferred, 2-3 is more preferred), arylfluorenyl group (carbon number 7-23 is preferred, 7-19) More preferably, 7 to 11 are further preferred), arylfluorenyloxy (carbon number 7 to 23 is preferred, 7 to 19 is more preferred, 7 to 11 is further preferred), carbamoyl (carbon number 1 -12 is preferred, 1 to 6 is more preferred, 1 to 3 is more preferred), sulfamoyl (carbon number 0 to 12 is preferred, 0 to 6 is more preferred, 0 to 3 is further preferred ), Sulfonic acid group, alkylsulfonyl group (carbon number 1 to 12 is preferred, 1 to 6 is more preferred, 1 to 3 is more preferred), arylsulfonyl group (carbon number 6 to 22 is more preferred) 6 to 18 are more preferred, 6 to 10 are more preferred), heterocyclic groups (carbon numbers of 1 to 12 are preferred, 1 to 8 are more preferred, 2 to 5 are further preferred, and 5-membered rings are included Or 6-membered ring is preferred), (meth) acrylfluorenyl, (meth) acrylfluorenyl, halogen atom (for example, fluorine atom, chlorine atom, bromine atom, iodine atom), oxo group (= O ), Imino (= NR N ), alkylene (= C (R N ) 2 ), etc.
R N is a hydrogen atom, an alkyl group (carbon number 1 to 12 is preferred, 1 to 6 is more preferred, 1 to 3 is more preferred), an alkenyl group (carbon number 2 to 12 is preferred, 2 to 6 is More preferably, 2 to 3 are further preferred), alkynyl (2 to 12 carbons are preferred, 2 to 6 are more preferred, 2 to 3 are more preferred), and aryl (6 to 22 carbons are more preferred) 6 to 18 are more preferred, 6 to 10 are further preferred), heteroaryl (carbon number 1 to 22 is preferred, 1 to 16 is more preferred, 1 to 12 are further preferred), of which hydrogen Atom, methyl, ethyl or propyl are preferred. R N may have each group specified by the substituent T within the range in which the effect of the present invention is exhibited.
The alkyl moiety, alkenyl moiety, and alkynyl moiety contained in each substituent may be chained, cyclic, or linear or branched. When the substituent T is a group capable of obtaining a substituent, it may further have a substituent T. For example, the alkyl group may be a halogenated alkyl group, or may be a (meth) acryloxyalkyl group, an aminoalkyl group, or a carboxyalkyl group.
作為連接基團L,可舉出伸烷基(碳數1~24為較佳,1~12為更佳,1~6為進一步較佳)、伸烯基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、伸炔基(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、(低聚)伸烷氧基(1個構成單元中的伸烷基的碳數為1~12為較佳,1~6為更佳,1~3為進一步較佳;重複數為1~50為較佳,1~40為更佳,1~30為進一步較佳)、伸芳基(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、氧原子、硫原子、磺醯基、羰基、硫羰基、-NRN -及該等的組合之連接基團。伸烷基可具有下述取代基T。例如,伸烷基可具有羥基。連接基團L中所含之原子數除氫原子之外為1~50為較佳,1~40為更佳,1~30為進一步較佳。連接原子數係指參與連接之原子團中位於最短路程之原子數。例如,-CH2 -(C=O)-O-時,參與連接之原子為6個,除氫原子之外亦為4個。另一方面,參與連接之最短原子為-C-C-O-,成為3個。作為該連接原子數,1~24為較佳,1~12為更佳,1~6為進一步較佳。再者,上述伸烷基、伸烯基、伸炔基、(低聚)伸烷氧基可為鏈狀、環狀,亦可為直鏈、分支。Examples of the linking group L include an alkylene group (carbon number 1 to 24 is preferred, 1 to 12 is more preferred, and 1 to 6 is more preferred), and an alkenyl group (carbon number 2 to 12 is more preferred) , 2 to 6 are more preferred, 2 to 3 are further preferred), alkynyl (carbon number of 2 to 12 is preferred, 2 to 6 is more preferred, 2 to 3 are further preferred), (oligomeric) Alkoxy group (The number of carbons of the alkylene group in one constituent unit is preferably from 1 to 12, more preferably from 1 to 6, and even more preferably from 1 to 3; the number of repetitions is preferably from 1 to 50. 1 to 40 is more preferred, 1 to 30 is further preferred), aryl (carbon number 6 to 22 is preferred, 6 to 18 is more preferred, 6 to 10 is further preferred), oxygen atom, sulfur atom , Sulfonyl, carbonyl, thiocarbonyl, -NR N -and combinations of these. The alkylene group may have the following substituent T. For example, the alkylene group may have a hydroxyl group. The number of atoms contained in the linking group L is preferably 1 to 50 in addition to the hydrogen atom, more preferably 1 to 40, and still more preferably 1 to 30. The number of connected atoms refers to the number of atoms in the shortest distance in the group of atoms participating in the connection. For example, when -CH 2- (C = O) -O-, the number of atoms involved in the connection is six, and in addition to hydrogen atoms, there are also four. On the other hand, the shortest atom participating in the connection is -CCO-, which becomes three. The number of connecting atoms is preferably from 1 to 24, more preferably from 1 to 12, and even more preferably from 1 to 6. The above-mentioned alkylene, alkenyl, alkynyl, and (oligomeric) alkoxy may be linear, cyclic, or linear or branched.
特定聚合物的重量平均分子量為2,000以上為較佳,3,000以上為更佳,4,000以上為進一步較佳,6,000以上為更加較佳,10,000以上為更進一步較佳,15,000以上為尤其更加較佳。重量平均分子量的上限並無特別限定,例如,200,000以下為較佳,100,000以下為更佳,70,000以下為進一步較佳,50,000以下為更加較佳,可為35,000以下。藉由將重量平均分子量設為上述下限值以上,烘焙處理時的膜穩定性得到提高,而能夠更提高壓印下層膜形成時的面狀。又,藉由將重量平均分子量設為上述上限值以下,向溶劑的溶解性變高,且基於旋轉塗佈等之適用變得更容易。藉由將上述分子量設在適當範圍內來維持流動性,從而提高壓印用硬化性組成物的潤濕性。
特定聚合物的分散度(Mw/Mn)為3.0以下為較佳,2.5以下為更佳。分散度的下限值可為1.0,但即使為1.5以上亦為充分實用水準。The weight-average molecular weight of the specific polymer is preferably 2,000 or more, more preferably 3,000 or more, even more preferably 4,000 or more, even more preferably 6,000 or more, further preferably 10,000 or more, and even more preferably 15,000 or more. The upper limit of the weight average molecular weight is not particularly limited. For example, it is preferably 200,000 or less, more preferably 100,000 or less, more preferably 70,000 or less, even more preferably 50,000 or less, and may be 35,000 or less. By setting the weight-average molecular weight to be equal to or more than the above-mentioned lower limit value, the stability of the film during the baking process is improved, and the planarity at the time of forming the imprint underlayer film can be further improved. In addition, by setting the weight average molecular weight to be equal to or less than the above-mentioned upper limit value, the solubility in a solvent becomes high, and application by spin coating or the like becomes easier. The wettability of the curable composition for imprint is improved by maintaining the fluidity by setting the molecular weight within an appropriate range.
The dispersion (Mw / Mn) of the specific polymer is preferably 3.0 or less, and more preferably 2.5 or less. The lower limit of the degree of dispersion may be 1.0, but even if it is 1.5 or more, it is a sufficiently practical level.
壓印用下層膜形成組成物中的特定聚合物的含有率為0.01質量%以上為較佳,0.05質量%以上為更佳,0.1質量%以上為進一步較佳。作為上限,10質量%以下為較佳,7質量%為更佳,5質量%為進一步較佳,4質量%以下為更加較佳,3質量%以下為更進一步較佳,可為1質量%以下,亦可為0.7質量%以下。
特定聚合物的不揮發性成分(係指組成物中的除溶劑之外的成分,以下相同)中的含有率為5質量%以上為較佳,20質量%以上為更佳,30質量%以上為進一步較佳,50質量%以上為更較佳,80質量%以上為更加較佳,90質量%以上為進一步更較佳,可為95質量%以上,亦可為99質量%以上。作為上限,可為100質量%。
藉由將該量設為上述下限值以上,能夠適當地發揮基於摻合聚合物而引起之效果,又,容易製作均勻的薄膜。另一方面,設為上述上限值以下,藉此適當地發揮使用溶劑之效果,容易在較寬的面積上形成均勻的膜。
特定聚合物可僅使用1種,亦可使用2種以上。使用2種以上時,總計量成為上述範圍為較佳。The content of the specific polymer in the underlayer film-forming composition for imprint is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and more preferably 0.1% by mass or more. As the upper limit, 10% by mass or less is preferred, 7% by mass is more preferred, 5% by mass is further preferred, 4% by mass or less is more preferred, 3% by mass or less is further preferred, and 1% by mass may be preferred. It may be 0.7 mass% or less.
The content of the non-volatile components of the specific polymer (referred to as components other than the solvent in the composition, the same below) is preferably 5 mass% or more, more preferably 20 mass% or more, and 30 mass% or more To be more preferable, 50% by mass or more is more preferable, 80% by mass or more is more preferable, 90% by mass or more is still more preferable, and 95% by mass or more may be 99% by mass or more. The upper limit may be 100% by mass.
By setting the amount to be equal to or more than the above-mentioned lower limit value, the effect due to the polymer blend can be appropriately exhibited, and a uniform film can be easily produced. On the other hand, by setting it to the above-mentioned upper limit value or less, the effect of using a solvent is appropriately exhibited, and a uniform film is easily formed over a wide area.
The specific polymer may be used alone or in combination of two or more. When two or more kinds are used, it is preferable that the total measurement falls within the above range.
作為特定聚合物的例子,能夠舉出下述聚合物,但本發明並不被此限定而解釋。再者,表中的交聯性單元與具有上述聚合性基團Ps之構成單元(例如與式(1-1)~(1-6))對應,酸性單元與源自上述pKa4.0以下的單體的構成單元(例如式(1)~(6))對應。
[表1]
[表2]
[表3]
[表4]
As examples of the specific polymer, the following polymers can be mentioned, but the present invention is not limited thereto and is to be interpreted. The crosslinkable units in the table correspond to the constituent units (for example, formulae (1-1) to (1-6)) having the polymerizable group Ps, and the acidic units correspond to those derived from the pKa 4.0 or lower. The constituent units of the monomer (for example, formulas (1) to (6)) correspond.
[Table 1]
[Table 2]
[table 3]
[Table 4]
<溶劑>
壓印用下層膜形成組成物包含溶劑(以下,有時稱作“下層膜用溶劑”)。溶劑例如為在23℃下為液體且沸點為250℃以下的化合物為較佳。通常,不揮發性成分最終形成下層膜。壓印用下層膜形成組成物包含99.0質量%以上的下層膜用溶劑為較佳,包含99.5質量%以上為更佳,可為99.6質量%以上。在本發明中,液體係指在23℃下的黏度為100,000mPa・s以下。藉由將溶劑的比率設為上述範圍,較薄地保持形成膜時的膜厚,以致提高蝕刻加工時的圖案形成性。
溶劑在壓印用下層膜形成組成物中可僅包含1種,亦可包含2種以上。包含2種以上時,總計量成為上述範圍為較佳。
下層膜用溶劑的沸點為230℃以下為較佳,200℃以下為更佳,180℃以下為進一步較佳,160℃以下為更較佳,130℃以下為更進一步較佳。下限值實際上為23℃,但60℃以上為更實際。藉由將沸點設為上述範圍,能夠容易從下層膜去除溶劑,因此較佳。<Solvent>
The underlayer film-forming composition for imprint contains a solvent (hereinafter, sometimes referred to as a “solvent for an underlayer film”). The solvent is preferably a compound which is liquid at 23 ° C and has a boiling point of 250 ° C or lower. Generally, the non-volatile components eventually form an underlayer film. The underlayer film-forming composition for imprinting preferably contains 99.0% by mass or more of the solvent for the underlayer film, more preferably contains 99.5% by mass or more, and may be 99.6% by mass or more. In the present invention, the liquid system means that the viscosity at 23 ° C is 100,000 mPa ・ s or less. By setting the ratio of the solvent to the above range, the film thickness at the time of film formation is kept thin, so that the pattern formability at the time of etching processing is improved.
The solvent may contain only one kind in the underlayer film-forming composition for imprint, or two or more kinds. When two or more kinds are included, the total measurement is preferably within the above range.
The boiling point of the solvent for the lower film is preferably 230 ° C or lower, more preferably 200 ° C or lower, more preferably 180 ° C or lower, more preferably 160 ° C or lower, and 130 ° C or lower. The lower limit is actually 23 ° C, but it is more practical above 60 ° C. By setting the boiling point to the above range, the solvent can be easily removed from the lower layer film, which is preferable.
下層膜用溶劑係有機溶劑為較佳。溶劑係具有酯基、羰基、羥基及醚基中的任一個以上之溶劑為較佳。其中,使用非質子性極性溶劑為較佳。A solvent-based organic solvent for the underlayer film is preferred. The solvent is preferably a solvent having any one or more of an ester group, a carbonyl group, a hydroxyl group, and an ether group. Among them, it is preferable to use an aprotic polar solvent.
作為具體例,選擇烷氧基醇、丙二醇單烷基醚羧酸酯、丙二醇單烷基醚、乳酸酯、乙酸酯、烷氧基丙酸酯、鏈狀酮、環狀酮、內酯及伸烷基碳酸酯。As specific examples, alkoxy alcohol, propylene glycol monoalkyl ether carboxylate, propylene glycol monoalkyl ether, lactate, acetate, alkoxypropionate, chain ketone, cyclic ketone, and lactone are selected. And alkylene carbonate.
作為烷氧基醇,可舉出甲氧基乙醇、乙氧基乙醇、甲氧基丙醇(例如1-甲氧基-2-丙醇)、乙氧基丙醇(例如,1-乙氧基-2-丙醇)、丙氧基丙醇(例如,1-丙氧基-2-丙醇)、甲氧基丁醇(例如,1-甲氧基-2-丁醇、1-甲氧基-3-丁醇)、乙氧基丁醇(例如,1-乙氧基-2-丁醇、1-乙氧基-3-丁醇)、甲基戊醇(例如,4-甲基-2-戊醇)等。Examples of the alkoxy alcohol include methoxyethanol, ethoxyethanol, methoxypropanol (for example, 1-methoxy-2-propanol), and ethoxypropanol (for example, 1-ethoxy). 2-propanol), propoxypropanol (for example, 1-propoxy-2-propanol), methoxybutanol (for example, 1-methoxy-2-butanol, 1-methyl Oxy-3-butanol), ethoxybutanol (for example, 1-ethoxy-2-butanol, 1-ethoxy-3-butanol), methylpentanol (for example, 4-methyl 2-pentyl alcohol) and the like.
作為丙二醇單烷基醚羧酸酯,為選自包含丙二醇單甲醚乙酸酯、丙二醇單甲醚丙酸酯及丙二醇單乙醚乙酸酯之群組中之至少1個為較佳,丙二醇單甲醚乙酸酯(PGMEA)為特佳。The propylene glycol monoalkyl ether carboxylic acid ester is preferably at least one selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate, and propylene glycol monoethyl ether acetate. Methyl ether acetate (PGMEA) is particularly preferred.
又,作為丙二醇單烷基醚,丙二醇單甲醚(PGME)或丙二醇單乙醚為較佳。
作為乳酸酯,乳酸乙酯、乳酸丁酯或乳酸丙酯為較佳。
作為乙酸酯,乙酸甲酯、乙酸乙酯、乙酸丁酯、乙酸異丁酯、乙酸丙酯、乙酸異戊酯(Isoamyl acetate)、甲酸甲酯、甲酸乙酯、甲酸丁酯、甲酸丙酯或乙酸3-甲氧基丁酯為較佳。
作為烷氧基丙酸酯,3-甲氧基丙酸甲酯(MMP)或3-乙氧基丙酸乙酯(EEP)為較佳。
作為鏈狀酮,1-辛酮、2-辛酮、1-壬酮、2-壬酮、丙酮、4-庚酮、1-己酮、2-己酮、二異丁酮、苯基丙酮、甲基乙基酮、甲基異丁基酮、乙醯基丙酮、丙酮基丙酮、紫羅蘭酮(ionone)、二丙酮醇、乙醯甲醇、苯乙酮、甲基萘基酮、甲基戊基酮為較佳。
作為環狀酮,甲基環己酮、異佛爾酮或環己酮為較佳。
作為內酯,γ-丁內酯(γBL)為較佳。
作為伸烷基碳酸酯,碳酸丙烯酯為較佳。As the propylene glycol monoalkyl ether, propylene glycol monomethyl ether (PGME) or propylene glycol monoethyl ether is preferable.
As the lactate, ethyl lactate, butyl lactate or propyl lactate is preferred.
As the acetate, methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, propyl acetate, isoamyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate Or 3-methoxybutyl acetate is preferred.
As the alkoxypropionate, methyl 3-methoxypropionate (MMP) or ethyl 3-ethoxypropionate (EEP) is preferred.
As the chain ketone, 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutanone, phenylacetone , Methyl ethyl ketone, methyl isobutyl ketone, acetoacetone, acetone acetone, ionone, diacetone alcohol, acetomethanol, acetophenone, methylnaphthyl ketone, methylpentyl Ketones are preferred.
As the cyclic ketone, methylcyclohexanone, isophorone or cyclohexanone is preferred.
As the lactone, γ-butyrolactone (γBL) is preferred.
As the alkylene carbonate, propylene carbonate is preferable.
除上述成分之外,使用碳數為7以上(7~14為較佳,7~12為更佳,7~10為進一步較佳)且雜原子數為2以下的酯系溶劑為較佳。In addition to the above components, it is preferable to use an ester-based solvent having a carbon number of 7 or more (7 to 14 is preferred, 7 to 12 is more preferred, 7 to 10 is more preferred) and a hetero atom number is 2 or less.
作為碳數為7以上且雜原子數為2以下的酯系溶劑的較佳例,可舉出乙酸戊酯、乙酸2-甲基丁酯、乙酸1-甲基丁酯、乙酸己酯、丙酸戊酯、丙酸己酯、丙酸丁酯、異丁酸異丁酯、丙酸庚酯、丁酸丁酯等,使用乙酸異戊酯(Isoamyl acetate)為特佳。Preferable examples of the ester-based solvent having 7 or more carbon atoms and 2 or less heteroatoms include amyl acetate, 2-methylbutyl acetate, 1-methylbutyl acetate, hexyl acetate, and propyl acetate. Amyl acetate, hexyl propionate, butyl propionate, isobutyl isobutyrate, heptyl propionate, butyl butyrate, etc. It is particularly preferred to use isoamyl acetate.
又,使用閃點(以下,還稱作p成分)為30℃以上之溶劑亦較佳。作為該種成分,丙二醇單甲醚(p成分:47℃)、乳酸乙酯(p成分:53℃)、3-乙氧基丙酸乙酯(p成分:49℃)、甲基戊基酮(p成分:42℃)、環己酮(p成分:30℃)、乙酸戊酯(p成分:45℃)、2-羥基異丁酸甲酯(p成分:45℃)、γ-丁內酯(p成分:101℃)或碳酸丙烯酯(p成分:132℃)為較佳。該等中,丙二醇單乙醚、乳酸乙酯、乙酸戊酯或環己酮為進一步較佳,丙二醇單乙醚或乳酸乙酯為特佳。It is also preferable to use a solvent having a flash point (hereinafter, also referred to as p component) of 30 ° C or higher. As such a component, propylene glycol monomethyl ether (p component: 47 ° C), ethyl lactate (p component: 53 ° C), ethyl 3-ethoxypropionate (p component: 49 ° C), methylpentyl ketone (P component: 42 ° C), cyclohexanone (p component: 30 ° C), amyl acetate (p component: 45 ° C), methyl 2-hydroxyisobutyrate (p component: 45 ° C), γ-butane Ester (p component: 101 ° C) or propylene carbonate (p component: 132 ° C) is preferred. Among these, propylene glycol monoethyl ether, ethyl lactate, amyl acetate, or cyclohexanone is more preferable, and propylene glycol monoethyl ether or ethyl lactate is particularly preferable.
作為下層膜用溶劑,其中作為較佳之溶劑可舉出烷氧基醇、丙二醇單烷基醚羧酸酯、丙二醇單烷基醚、乳酸酯、乙酸酯、烷氧基丙酸酯、鏈狀酮、環狀酮、內酯及伸烷基碳酸酯。Examples of the solvent for the lower film include alkoxy alcohol, propylene glycol monoalkyl ether carboxylic acid ester, propylene glycol monoalkyl ether, lactate, acetate, alkoxypropionate, and chain. Ketones, cyclic ketones, lactones and alkylene carbonates.
<其他成分>
關於壓印用下層膜形成組成物,除上述之外,可以包含1種或2中以上伸烷基二醇化合物、聚合起始劑、聚合抑制劑、抗氧化劑、均染劑、增黏劑、界面活性劑等。
關於熱聚合起始劑等,能夠使用日本特開2013-036027號公報、日本特開2014-090133號公報、日本特開2013-189537號公報中記載之各成分。關於含量等亦能夠參閱上述公報的記載。< Other ingredients >
As for the underlayer film-forming composition for imprint, in addition to the above, one or two or more alkylene glycol compounds, a polymerization initiator, a polymerization inhibitor, an antioxidant, a leveling agent, a tackifier, Surfactants and so on.
Regarding the thermal polymerization initiator, the components described in Japanese Patent Application Laid-Open No. 2013-036027, Japanese Patent Application Laid-Open No. 2014-090133, and Japanese Patent Application Laid-Open No. 2013-189537 can be used. Regarding the content and the like, it is also possible to refer to the description in the aforementioned publication.
<<伸烷基二醇化合物>>
壓印用下層膜形成組成物可以包含伸烷基二醇化合物。伸烷基二醇化合物具有3~1000個伸烷基二醇構成單元為較佳,具有4~500個為更佳,具有5~100個為進一步較佳,具有5~50個為更較佳。伸烷基二醇化合物的重量平均分子量(Mw)為150~10000為較佳,200~5000為更佳,300~3000為進一步較佳,300~1000為更較佳。
伸烷基二醇化合物例示有聚乙二醇、聚丙二醇、該等單或二甲基醚、單或二辛基醚、單或二壬醚、單或二癸醚、單硬脂酸酯、單有酸酯、單己二酸酯、單琥珀酸酯,聚乙二醇、聚丙二醇為較佳。
伸烷基二醇化合物在23℃下的表面張力為38.0mN/m以上為較佳,40.0mN/m以上為更佳。表面張力的上限並無特別限定,例如為48.0mN/m以下。藉由摻合如上化合物,能夠提高設置在下層膜正上方之壓印用硬化性組成物的潤濕性。
表面張力使用Kyowa Interface Science Co.,Ltd製、表面張力儀 SURFACE TENS-IOMETER CBVP-A3,且利用玻璃板在23℃下進行了測量。單位由mN/m表示。每1水準製作2個試樣,且分別測量3次。並將總計6次的算術平均值採用為評價值。<<< Alkanyl glycol compound >>
The underlayer film-forming composition for imprint may include an alkylene glycol compound. The alkylene glycol compound preferably has 3 to 1,000 alkylene glycol constituent units, more preferably 4 to 500 units, more preferably 5 to 100 units, and even more preferably 5 to 50 units. . The weight average molecular weight (Mw) of the alkylene glycol compound is preferably from 150 to 10,000, more preferably from 200 to 5,000, more preferably from 300 to 3,000, and even more preferably from 300 to 1,000.
The alkylene glycol compound is exemplified by polyethylene glycol, polypropylene glycol, such mono- or dimethyl ethers, mono- or dioctyl ether, mono- or dinonyl ether, mono- or didecyl ether, monostearate, Monoesters, monoadipates, and monosuccinates are preferred. Polyethylene glycol and polypropylene glycol are preferred.
The surface tension of the alkylene glycol compound at 23 ° C is preferably 38.0 mN / m or more, and more preferably 40.0 mN / m or more. The upper limit of the surface tension is not particularly limited, and is, for example, 48.0 mN / m or less. By blending the compounds as described above, the wettability of the hardening composition for imprint provided directly above the lower film can be improved.
The surface tension was measured using a surface tension meter SURFACE TENS-IOMETER CBVP-A3 manufactured by Kyowa Interface Science Co., Ltd, and measured at 23 ° C using a glass plate. The unit is expressed in mN / m. Two samples were made for each level and measured three times. The arithmetic average of 6 times in total was adopted as the evaluation value.
當含有伸烷基二醇化合物時,為不揮發性成分的40質量%以下,30質量%以下為較佳,20質量%以下為更佳,1~15質量%為進一步較佳。
伸烷基二醇化合物可僅使用1種,亦可使用2種以上。使用2種以上時,總計量成為上述範圍為較佳。When the alkylene glycol compound is contained, it is 40% by mass or less of the nonvolatile component, 30% by mass or less is preferable, 20% by mass or less is more preferable, and 1 to 15% by mass is further more preferable.
The alkylene glycol compound may be used alone or in combination of two or more. When two or more kinds are used, it is preferable that the total measurement falls within the above range.
<<聚合起始劑>>
壓印用下層膜形成組成物可以包含聚合起始劑,包含熱聚合起始劑及光聚合起始劑的至少1種為較佳。藉由包含聚合起始劑,存在促進壓印用下層膜形成組成物中所含之聚合性基團的反應,提高密接性之傾向。從提高與壓印用硬化性組成物的交聯反應性之觀點而言,光聚合起始劑為較佳。作為光聚合起始劑,自由基聚合起始劑、陽離子聚合起始劑為較佳,自由基聚合起始劑為更佳。又,在本發明中,光聚合起始劑可併用複數種。<< polymerization initiator
The lower-layer film-forming composition for imprinting may contain a polymerization initiator, and it is preferable to include at least one of a thermal polymerization initiator and a photopolymerization initiator. By including a polymerization initiator, there is a tendency that the reaction of the polymerizable group contained in the underlayer film-forming composition for imprinting is promoted and the adhesion is improved. From the viewpoint of improving the cross-linking reactivity with the curable composition for imprint, a photopolymerization initiator is preferred. As the photopolymerization initiator, a radical polymerization initiator and a cationic polymerization initiator are preferable, and a radical polymerization initiator is more preferable. In the present invention, a plurality of photopolymerization initiators may be used in combination.
作為光自由基聚合起始劑,能夠任意使用公知的化合物。例如,可舉出鹵化烴衍生物(例如,具有三嗪骨架之化合物、具有噁二唑骨架之化合物、具有三鹵化甲基之化合物等)、醯基膦氧化物等醯基膦化合物、六芳基雙咪唑、肟衍生物等肟化合物、有機過氧化物、硫化合物(thio compound)、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮、偶氮系化合物、疊氮化合物、茂金屬化合物、有機硼化合物、鐵-芳烴錯合物等。關於該等的詳細內容,能夠參閱日本特開2016-027357號公報的0165~0182段的記載,該內容併入本說明書中。
作為醯基膦化合物,可舉出2,4,6-三甲基苯甲醯基-二苯基-氧化膦等。又,能夠使用作為市售品之IRGACURE-819或IRGACURE1173、IRGACURE-TPO(產品名:均為BASF公司製)。As the photoradical polymerization initiator, a known compound can be arbitrarily used. For example, halogenated hydrocarbon derivatives (for example, compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.), fluorenylphosphine compounds such as a fluorenylphosphine oxide, and hexaaryl Oxime compounds such as bisimidazole, oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, aminoacetophenone compounds, hydroxyacetophenone, azo-based compounds Compounds, azide compounds, metallocene compounds, organoboron compounds, iron-arene complexes, and the like. For details of these, refer to the descriptions in paragraphs 0165 to 0182 of Japanese Patent Application Laid-Open No. 2016-027357, which are incorporated into this specification.
Examples of the fluorenylphosphine compound include 2,4,6-trimethylbenzylfluorenyl-diphenyl-phosphine oxide and the like. In addition, IRGACURE-819, IRGACURE1173, and IRGACURE-TPO (product names: all manufactured by BASF) can be used as commercially available products.
在上述壓印用下層膜形成組成物中使用之光聚合起始劑的含量在進行摻合時,不揮發性成分中,例如為0.0001~5質量%,0.0005~3質量%為較佳,0.01~1質量%為進一步較佳。使用2種以上的光聚合起始劑時,其總計量成為上述範圍。When the content of the photopolymerization initiator used in the above-mentioned underlayer film-forming composition for imprinting is blended, the nonvolatile component is, for example, 0.0001 to 5% by mass, preferably 0.0005 to 3% by mass, and 0.01 -1 mass% is more preferable. When two or more kinds of photopolymerization initiators are used, the total amount is within the above range.
<收容容器>
作為壓印用下層膜形成組成物的收容容器能夠使用以往習知的收容容器。又,作為收容容器,以抑制雜質混入原料或組成物中之目的,使用由6種6層樹脂構成容器內壁之多層瓶或將6種樹脂設為7層結構之瓶亦較佳。作為該種容器,例如可舉出日本特開2015-123351號公報中記載之容器。<Container>
As a storage container for the underlayer film-forming composition for imprint, a conventionally known storage container can be used. In addition, as a storage container, in order to prevent impurities from being mixed into the raw materials or the composition, it is also preferable to use a multi-layer bottle composed of six kinds of six-layer resin or a bottle having six resins in a seven-layer structure. As such a container, the container described in Unexamined-Japanese-Patent No. 2015-123351 is mentioned, for example.
<表面自由能>
由本發明的壓印用下層膜形成組成物形成之壓印用下層膜的表面自由能為30mN/m以上為較佳,40mN/m以上為更佳,50mN/m以上為進一步較佳。作為上限,200mN/m以上為較佳,150mN/m以上為更佳,100mN/m以上為進一步較佳。
表面自由能的測量能夠使用Kyowa Interface Science Co.,Ltd製、表面張力儀 SURFACE TENS-IOMETER CBVP-A3,且利用玻璃板在23℃下進行。< Surface free energy >
The surface free energy of the imprint underlayer film formed from the imprint underlayer film forming composition of the present invention is preferably 30 mN / m or more, more preferably 40 mN / m or more, and more preferably 50 mN / m or more. As an upper limit, 200 mN / m or more is preferable, 150 mN / m or more is more preferable, and 100 mN / m or more is more preferable.
The surface free energy can be measured using a surface tension meter SURFACE TENS-IOMETER CBVP-A3 manufactured by Kyowa Interface Science Co., Ltd. and using a glass plate at 23 ° C.
<壓印用硬化性組成物>
本發明的下層膜形成組成物通常用作用於形成壓印用硬化性組成物的下層膜的組成物。
壓印用硬化性組成物的組成等並無特別限定,包含聚合性化合物為較佳。< curable composition for imprinting >
The underlayer film-forming composition of the present invention is generally used as a composition for forming an underlayer film for a curable composition for imprint.
The composition and the like of the curable composition for imprint are not particularly limited, and it is preferable to include a polymerizable compound.
<<聚合性化合物>>
壓印用硬化性組成物包含聚合性化合物為較佳,該聚合性化合物構成最大量成分為更佳。聚合性化合物在一分子中可以具有1個聚合性基團,亦可以具有2個以上。在壓印用硬化性組成物中所含之聚合性化合物的至少1種在一分子中包含2~5個聚合性基團為較佳,包含2~4個為更佳,包含2或3個為進一步較佳,包含3個為進一步較佳。
壓印用硬化性組成物中包含之聚合性化合物中的至少1種包含芳香族環(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)及脂環(碳數3~24為較佳,3~18為更佳,3~6為進一步較佳)中至少一者為較佳,包含芳香族環為進一步較佳。芳香族環係苯環為較佳。
聚合性化合物的分子量為100~900為較佳。
上述聚合性化合物的至少1種由下述式(I-1)表示為較佳。
[化學式3]
L20
為1+q2價的連接基團,例如,1+q2價的烷烴結構的基團(碳數1~12為較佳,1~6為更佳,1~3為進一步較佳)、烯烴結構的基團(碳數2~12為較佳,2~6為更佳,2~3為進一步較佳)、芳基結構的基團(碳數6~22為較佳,6~18為更佳,6~10為進一步較佳)、雜芳基結構的基團(碳數1~22為較佳,1~18為更佳,1~10為進一步較佳,作為雜原子,可舉出氮原子、硫原子、氧原子,5員環、6員環、7員環為較佳)或包含組合該些之基團之連接基團。作為組合2個芳基之基團,可舉出具有聯苯或二苯基烷烴、聯伸苯基、茚等的結構之基團。作為組合雜芳基結構之基團與芳基結構的基團者,可舉出具有吲哚、苯并咪唑、喹喔啉、咔唑等的結構之基團。
R21
及R22
分別獨立地表示氫原子或甲基。
L21 及
L22
分別獨立地表示單鍵或上述連接基團L,其中,具有雜原子之連接基團為較佳。L20
與L21
或L22
可以經由或不經由連接基L鍵結而形成環。L20
、L21
及L22
可具有上述取代基T。取代基T可鍵結複數個而形成環。取代基T為複數個時,可以彼此相同,亦可彼此不同。
q2為0~5的整數,0~3的整數為較佳,0~2的整數為更佳,0或1為進一步較佳。<<< Polymerizable Compound >>
It is preferable that the curable composition for imprint contains a polymerizable compound, and it is more preferable that the polymerizable compound constitute a maximum amount of the component. The polymerizable compound may have one polymerizable group in one molecule, or may have two or more polymerizable groups. It is preferred that at least one of the polymerizable compounds contained in the curable composition for imprinting contains 2 to 5 polymerizable groups in one molecule, 2 to 4 is more preferred, and 2 or 3 is contained. For further preference, it is further preferred to include three.
At least one of the polymerizable compounds contained in the curable composition for imprint contains an aromatic ring (carbon number 6 to 22 is more preferable, 6 to 18 is more preferable, 6 to 10 is more preferable) and an alicyclic ring (The number of carbon atoms is preferably 3 to 24, 3 to 18 is more preferable, and 3 to 6 are more preferable.) At least one of them is preferable, and an aromatic ring is more preferable. An aromatic ring-based benzene ring is preferred.
The molecular weight of the polymerizable compound is preferably 100 to 900.
At least one type of the polymerizable compound is preferably represented by the following formula (I-1).
[Chemical Formula 3]
L 20 is a 1 + q2 valent linking group, for example, a alkane structure of 1 + q2 valence (carbon number 1-12 is more preferable, 1-6 is more preferable, 1 to 3 is more preferable), Groups with olefin structure (carbon numbers 2-12 are preferred, 2-6 are more preferred, 2-3 are more preferred), groups with aryl structures (carbon numbers 6-22 are preferred, 6-18 More preferably, 6 to 10 are further preferred), and a group having a heteroaryl structure (carbon number of 1 to 22 is preferred, 1 to 18 is more preferred, 1 to 10 is further preferred, and as a hetero atom, it may be Examples include a nitrogen atom, a sulfur atom, and an oxygen atom, and a 5-membered ring, a 6-membered ring, and a 7-membered ring are preferred) or a linking group containing a combination of these. Examples of the group in which two aryl groups are combined include groups having a structure such as biphenyl or diphenylalkane, biphenylene, and indene. Examples of a combination of a heteroaryl structure group and an aryl structure group include groups having a structure such as indole, benzimidazole, quinoxaline, and carbazole.
R 21 and R 22 each independently represent a hydrogen atom or a methyl group.
L 21 and L 22 each independently represent a single bond or the above-mentioned linking group L, and among them, a linking group having a hetero atom is preferred. L 20 and L 21 or L 22 may form a ring by bonding with or without a linker L. L 20 , L 21 and L 22 may have the above-mentioned substituent T. A plurality of substituents T may be bonded to form a ring. When there are a plurality of substituents T, they may be the same as or different from each other.
q2 is an integer from 0 to 5, an integer from 0 to 3 is preferred, an integer from 0 to 2 is more preferred, and 0 or 1 is further preferred.
作為聚合性化合物的例子,能夠舉出在下述實施例中使用之化合物、日本特開2014-090133號公報的0017~0024段及在實施例中記載的化合物、在日本特開2015-009171號公報的0024~0089段中記載的化合物、在日本特開2015-070145號公報的0023~0037段中記載的化合物、在國際公開第2016/152597號的0012~0039段中記載的化合物,但本發明並不被這個限定而解釋。Examples of the polymerizable compound include compounds used in the following examples, paragraphs 0017 to 0024 of Japanese Patent Application Laid-Open No. 2014-090133 and the compounds described in the examples, and Japanese Patent Laid-Open No. 2015-009171. The compounds described in paragraphs 0024 to 0089, the compounds described in paragraphs 0223 to 0037 of Japanese Patent Application Laid-Open No. 2015-070145, and the compounds described in paragraphs 0012 to 0039 of International Publication No. 2016/152597. However, the present invention It is not explained by this limitation.
聚合性化合物在壓印用硬化性組成物中含有30質量%以上為較佳,45質量%以上為更佳,50質量%以上為進一步較佳,55質量%以上為進一步較佳,可為60質量%以上,還可為70質量%以上。又,上限值小於99質量%為較佳,98質量%以下為進一步較佳,還能夠設為97質量%以下。It is preferable that the polymerizable compound contains 30% by mass or more in the curable composition for imprinting, more preferably 45% by mass or more, more preferably 50% by mass or more, more preferably 55% by mass or more, and may be 60 It may be 70% by mass or more. The upper limit value is preferably less than 99% by mass, more preferably 98% by mass or less, and can be 97% by mass or less.
聚合性化合物的沸點利用與在上述之壓印用下層膜形成組成物中所含之特定化合物的關係設定而設計配比為較佳。聚合性化合物的沸點為500℃以下為較佳,450℃以下為更佳,400℃以下為進一步較佳。作為下限值,200℃以上為較佳,220℃以上為更佳,240℃以上為進一步較佳。It is preferable that the boiling point of the polymerizable compound is designed by using the relationship setting with the specific compound contained in the above-mentioned underlayer film-forming composition for imprinting. The boiling point of the polymerizable compound is preferably 500 ° C or lower, more preferably 450 ° C or lower, and further preferably 400 ° C or lower. The lower limit is preferably 200 ° C or higher, more preferably 220 ° C or higher, and still more preferably 240 ° C or higher.
<<其他成分>>
壓印用硬化性組成物可含有聚合性化合物之外的添加劑。作為其他添加劑,可以包含聚合起始劑、界面活性劑、敏化劑、脫模劑、抗氧化劑、聚合抑制劑等。
作為能夠在本發明中使用之壓印用硬化性組成物的具體例,例示在日本特開2013-036027號公報、日本特開2014-090133號公報、日本特開2013-189537號公報中記載之組成物,並將該等內容併入本說明書。又,關於壓印用硬化性組成物的製備、膜(圖案形成層)的形成方法,亦能夠參閱上述公報的記載,並將該等內容併入本說明書。<< Other Ingredients >>
The curable composition for imprint may contain additives other than a polymerizable compound. Other additives may include a polymerization initiator, a surfactant, a sensitizer, a release agent, an antioxidant, a polymerization inhibitor, and the like.
Specific examples of the hardenable composition for imprint that can be used in the present invention are described in Japanese Patent Application Laid-Open No. 2013-036027, Japanese Patent Application Laid-Open No. 2014-090133, and Japanese Patent Application Laid-Open No. 2013-189537. Composition, and incorporates these contents into this specification. Regarding the method for preparing the curable composition for imprint and the method for forming the film (pattern-forming layer), it is also possible to refer to the description of the above-mentioned publication and incorporate the contents into this specification.
本發明中,壓印用硬化性組成物中的溶劑的含量為壓印用硬化性組成物的5質量%以下為較佳,3質量%以下為更佳,1質量%以下為進一步較佳。
壓印用硬化性組成物還能夠設為實質上不含有聚合物(重量平均分子量大於1,000為較佳,重量平均分子量大於2,000為更佳,進一步較佳為重量平均分子量大於10,000以上的聚合物)之態樣。實質上不含有聚合物係指,例如,聚合物的含量為壓印用硬化性組成物的0.01質量%以下,0.005質量%以下為較佳,完全不含有為更佳。In the present invention, the content of the solvent in the embossable curable composition is preferably 5% by mass or less, more preferably 3% by mass or less, and further preferably 1% by mass or less.
The curable composition for imprinting can also be made substantially free of polymers (preferably having a weight average molecular weight greater than 1,000, more preferably having a weight average molecular weight greater than 2,000, and even more preferably a polymer having a weight average molecular weight greater than 10,000) Like this. The fact that the polymer is not substantially contained means, for example, that the content of the polymer is 0.01% by mass or less of the curable composition for imprint, preferably 0.005% by mass or less, and more preferably not contained at all.
<<物性值等>>
壓印用硬化性組成物的黏度為20.0mPa・s以下為較佳,15.0mPa・s以下為更佳,11.0mPa・s以下為進一步較佳,9.0mPa・s以下為更加較佳。作為上述黏度的下限值,並無特別限定,例如,能夠設為5.0mPa・s以上。黏度按照下述方式測量。
黏度使用TOKI SANGYO CO.,LTD製的E型旋轉黏度儀RE85L、標準圓錐・轉子(1°34’×R24),將樣品杯的溫度調節成23℃並進行測量。單位由mPa・s表示。有關測量之其他詳細內容依據JISZ8803:2011。每1水準製作2個試樣,且分別測量3次。並將總計6次的算術平均值採用為評價值。< Physical properties and other values >>
The viscosity of the curable composition for imprinting is preferably 20.0 mPa ・ s or less, more preferably 15.0 mPa ・ s or less, even more preferably 11.0 mPa ・ s or less, and even more preferably 9.0 mPa ・ s or less. The lower limit of the viscosity is not particularly limited, and it can be, for example, 5.0 mPa ・ s or more. The viscosity is measured in the following manner.
The viscosity was measured using an E-type rotary viscosity meter RE85L made by TOKI SANGYO CO., LTD, and a standard conical rotor (1 ° 34 '× R24). The temperature of the sample cup was adjusted to 23 ° C. The unit is expressed by mPa ・ s. Other details about the measurement are based on JISZ8803: 2011. Two samples were made for each level and measured three times. The arithmetic average of 6 times in total was adopted as the evaluation value.
壓印用硬化性組成物的表面張力(γResist)為28.0mN/m以上為較佳,30.0mN/m以上為更佳,可為32.0mN/m以上。藉由使用表面張力較高的壓印用硬化性組成物,提高毛細管力,且能夠進行壓印用硬化性組成物向鑄模圖案的高速填充。作為上述表面張力的上限值,並無特別限定,從賦予與下層膜的關係及噴墨適應性之觀點而言,40.0mN/m以下為較佳,38.0mN/m以下為更佳,可為36.0mN/m以下。壓印用硬化性組成物的表面張力按照下述方法測量。The surface tension (γResist) of the hardening composition for imprint is preferably 28.0 mN / m or more, more preferably 30.0 mN / m or more, and may be 32.0 mN / m or more. By using a hardenable composition for imprint having a high surface tension, the capillary force is increased, and high-speed filling of the hardenable composition for imprint into a mold pattern can be performed. The upper limit value of the surface tension is not particularly limited. From the viewpoint of imparting the relationship with the underlayer film and the inkjet adaptability, 40.0 mN / m or less is preferable, and 38.0 mN / m or less is more preferable. It is 36.0 mN / m or less. The surface tension of the curable composition for imprint was measured by the following method.
壓印用硬化性組成物的Ohnishi參數為5.0以下為較佳,4.0以下為更佳,3.7以下為進一步較佳。壓印用硬化性組成物的Ohnishi參數的下限值並無特別限定,例如可為1.0以上,進一步為2.0以上。
對於壓印用硬化性組成物的聚合性化合物,分別將總構成成分的碳原子、氫原子及氧原子的數代入下述公式從而能夠求出Ohnishi參數。
Ohnishi參數=碳原子、氫原子及氧原子的數之和/(碳原子的數-氧原子的數)The Ohnishi parameter of the hardenable composition for imprint is preferably 5.0 or less, more preferably 4.0 or less, and even more preferably 3.7 or less. The lower limit value of the Ohnishi parameter of the hardening composition for imprint is not particularly limited, and may be, for example, 1.0 or more, and further 2.0 or more.
For the polymerizable compound of the curable composition for imprint, the number of carbon atoms, hydrogen atoms, and oxygen atoms of the total constituent components can be substituted into the following formula to obtain the Ohnishi parameter.
Ohnishi parameter = sum of the number of carbon atoms, hydrogen atoms and oxygen atoms / (number of carbon atoms-number of oxygen atoms)
<<保存容器>>
作為在本發明中使用之壓印用硬化性組成物的收容容器,能夠使用以往習知的收容容器。又,作為收容容器,以抑制雜質混入原料或組成物中之目的,使用由6種6層樹脂構成容器內壁之多層瓶或將6種樹脂設為7層結構之瓶亦較佳。作為該種容器,例如可舉出日本特開2015-123351號公報中記載之容器。<< Storage Container >>
As a storage container for the imprintable curable composition used in the present invention, a conventionally known storage container can be used. In addition, as a storage container, in order to prevent impurities from being mixed into the raw materials or the composition, it is also preferable to use a multi-layer bottle composed of six kinds of six-layer resin or a bottle having six resins in a seven-layer structure. As such a container, the container described in Unexamined-Japanese-Patent No. 2015-123351 is mentioned, for example.
<圖案及圖案形成方法>
本發明的較佳實施形態之圖案的形成方法包括:使用本發明的壓印用下層膜形成組成物在基板表面形成下層膜之製程(下層膜形成製程);在上述下層膜上(下層膜的表面為較佳)適用壓印用下層膜形成組成物而形成壓印用硬化性組成物層之製程(壓印用硬化性組成物層形成製程)、使鑄模與上述壓印用硬化性組成物層接觸之製程;在接觸上述鑄模之狀態下對上述壓印用硬化性組成物層進行曝光之製程;及將上述鑄模從上述曝光之壓印用硬化性組成物層剝離之製程。
以下,關於圖案形成方法(硬化物圖案的製造方法)根據圖1的(1)~(7)進行說明。很顯然本發明的結構並不限定於圖示。<Pattern and pattern formation method>
A method for forming a pattern according to a preferred embodiment of the present invention includes: a process for forming an underlayer film on a substrate surface using the underlayer film forming composition for imprinting according to the present invention (underlayer film forming process); The surface is preferred.) A process for forming a hardenable composition layer for imprinting (a hardenable composition layer formation process for imprinting) by applying an underlayer film-forming composition for imprinting, and applying a mold to the hardenable composition for imprinting A process of contacting the layers; a process of exposing the hardenable composition layer for imprinting in a state in contact with the mold; and a process of peeling the mold from the hardenable composition layer for imprinting of the exposure.
Hereinafter, a pattern forming method (a method of manufacturing a cured product pattern) will be described with reference to (1) to (7) of FIG. 1. Obviously, the structure of the present invention is not limited to the illustration.
<<下層膜形成製程>>
如圖1的(1)、圖1的(2)所示,下層膜形成製程中,在基板1的表面形成下層膜2。下層膜在基板上將壓印用下層膜形成組成物適用為層狀而形成為較佳。基板1除了由單層構成之情況之外,可具有下塗層或密接膜。<〈 Underlayer Film Formation Process 〉>
As shown in (1) and (2) of FIG. 1, in the lower-layer film forming process, the lower-layer film 2 is formed on the surface of the substrate 1. The underlayer film is preferably formed on a substrate by applying an underlayer film-forming composition for imprinting to a layer. The substrate 1 may have an undercoat layer or an adhesive film, except for a case where the substrate 1 is composed of a single layer.
作為將壓印用下層膜形成組成物應用於基板上的方法,並無特別限定,能夠採用一般周知的適用方法。具體而言,作為適用方法,例如,例示有浸塗法、氣動塗佈法、簾式塗佈法、線棒塗佈法(wire bar coat)、凹版塗佈法、擠壓塗佈法、旋轉塗佈法、狹縫掃描法或噴墨法,旋轉塗佈法為較佳。
又,在基板上將壓印用下層膜形成組成物適用為層狀之後,利用熱揮發(乾燥)溶劑而形成作為薄膜之下層膜。A method for applying the underlayer film-forming composition for imprint to a substrate is not particularly limited, and a generally known and applicable method can be adopted. Specifically, examples of the applicable method include a dip coating method, a pneumatic coating method, a curtain coating method, a wire bar coat method, a gravure coating method, an extrusion coating method, and a spin. The coating method, the slit scanning method, or the inkjet method is preferably a spin coating method.
Furthermore, after the imprinting underlayer film-forming composition is applied to a substrate on a substrate, the solvent is evaporated (dried) by heat to form an underlayer film as a thin film.
下層膜2的厚度為2nm以上為較佳,3nm以上為更佳,4nm以上為進一步較佳,可為5nm以上,亦可為7nm以上,還可為10nm以上。又,下層膜的厚度為40nm以下為較佳,30nm為更佳,20nm為進一步較佳,可為15nm以下。藉由將膜厚設為上述下限值以上,壓印用硬化性組成物在下層膜上的擴展性(潤濕性)得到提高,能夠形成壓印後的均勻的殘餘膜。藉由將膜厚設為上述上限值以下,存在壓印後的殘餘膜變薄,不易發生膜厚不均,殘餘膜的均勻性得到提高之傾向。The thickness of the lower layer film 2 is preferably 2 nm or more, more preferably 3 nm or more, and even more preferably 4 nm or more, and may be 5 nm or more, 7 nm or more, and 10 nm or more. The thickness of the lower layer film is preferably 40 nm or less, more preferably 30 nm, and even more preferably 20 nm, and may be 15 nm or less. By setting the film thickness to be greater than the above-mentioned lower limit value, the spreadability (wetability) of the curable composition for imprint on the underlayer film is improved, and a uniform residual film can be formed after imprinting. By setting the film thickness to be equal to or less than the above-mentioned upper limit value, there is a tendency that the residual film after embossing becomes thin, uneven film thickness is unlikely to occur, and the uniformity of the residual film is improved.
作為基板的材質,並無特別限定,能夠參閱日本特開2010-109092號公報的0103段的記載,並將該些內容併入本說明書。本發明中,可舉出矽基板、玻璃基板、石英基板、藍寶石基板、矽碳化物(碳化矽)基板、氮化鎵基板、鋁基板、無定形氧化鋁基板、多晶氧化鋁基板以及由SOC(旋轉塗佈式碳)、SOG(旋轉塗佈式玻璃)、氮化矽、氧氮化矽以及GaAsP、GaP、AlGaAs、InGaN、GaN、AlGaN、ZnSe、AlGa、InP或ZnO構成之基板。再者,作為玻璃基板的具體的材料例,可舉出鋁矽酸鹽玻璃、鋁硼矽酸鹽玻璃、鋇硼矽酸鹽玻璃。本發明中,矽基板及塗佈SOC(旋轉塗佈式碳)之基板為較佳。The material of the substrate is not particularly limited, and reference can be made to the description in paragraph 0103 of Japanese Patent Application Laid-Open No. 2010-109092, and these contents are incorporated into this specification. In the present invention, a silicon substrate, a glass substrate, a quartz substrate, a sapphire substrate, a silicon carbide (silicon carbide) substrate, a gallium nitride substrate, an aluminum substrate, an amorphous alumina substrate, a polycrystalline alumina substrate, and a SOC (Spin-coated carbon), SOG (spin-coated glass), silicon nitride, silicon oxynitride, and GaAsP, GaP, AlGaAs, InGaN, GaN, AlGaN, ZnSe, AlGa, InP, or ZnO. Specific examples of the material of the glass substrate include aluminosilicate glass, aluminoborosilicate glass, and barium borosilicate glass. In the present invention, a silicon substrate and a substrate coated with SOC (spin-coated carbon) are preferred.
在本發明中,使用作為最表層具有有機層之基板為較佳。
作為基板的有機層,可舉出由CVD(Chemical Vapor Deposition化學氣相沉積)形成之非晶碳膜或使高碳材料溶解於有機溶劑中並由旋轉塗佈形成之旋轉塗佈式碳膜。作為旋轉塗佈式碳膜,可舉出降三環烯共聚物、加氫萘酚酚醛清漆樹脂、萘酚二環戊二烯共聚物、苯酚二環戊二烯共聚物、日本特開2005-128509號公報中記載之芴雙酚酚醛清漆、日本特開2005-250434號公報中記載之苊烯共聚合、茚共聚物、具有日本特開2006-227391號公報中記載之苯酚基之富勒烯、雙酚化合物及該酚醛清漆樹脂、二雙酚化合物及該酚醛清漆樹脂、金剛烷苯酚化合物的酚醛清漆樹脂、羥基乙烯基萘共聚物、日本特開2007-199653號公報中記載之雙萘酚化合物及該酚醛清漆樹脂、ROMP、示為三環戊二烯共聚物之樹脂化合物。
作為SOC的例子,能夠參閱日本特開2011-164345號公報的0126段的記載,並將該內容併入本說明書中。In the present invention, it is preferable to use a substrate having an organic layer as the outermost layer.
Examples of the organic layer of the substrate include an amorphous carbon film formed by CVD (Chemical Vapor Deposition) or a spin coating type carbon film formed by dissolving a high carbon material in an organic solvent and spin coating. Examples of the spin-coated carbon film include a tricyclone copolymer, a hydronaphthol novolac resin, a naphthol dicyclopentadiene copolymer, a phenol dicyclopentadiene copolymer, and Japanese Patent Application Laid-Open No. 2005- Amidene bisphenol novolak described in JP 128509, a pinene copolymer, an indene copolymer described in JP 2005-250434, and a fullerene having a phenol group described in JP 2006-227391 Bisphenol compound and the novolac resin, dibisphenol compound and the novolac resin, novolac resin of the adamantane phenol compound, hydroxyvinyl naphthalene copolymer, bisnaphthol described in JP 2007-199653 The compound and the novolak resin, ROMP, and a resin compound shown as a tricyclopentadiene copolymer.
As an example of the SOC, the description in paragraph 0126 of Japanese Patent Application Laid-Open No. 2011-164345 can be referred to, and the content is incorporated into this specification.
作為基板表面的水的接觸角,20°以上為較佳,40°以上為更佳,60°以上為進一步較佳。作為上限,實際上為90°以下。接觸角根據在後述之實施例中記載之方法測量。The contact angle of water on the substrate surface is preferably 20 ° or more, more preferably 40 ° or more, and more preferably 60 ° or more. The upper limit is actually 90 ° or less. The contact angle is measured by a method described in Examples described later.
在本發明中,使用作為最表層具有鹼性層之基板(以下,稱作鹼性基板)為較佳。作為鹼性基板的例子,可舉出包含鹼性有機化合物(例如,胺系化合物或銨系化合物等)之基板或含有氮原子之無機基板。In the present invention, it is preferable to use a substrate (hereinafter, referred to as an alkaline substrate) having an alkaline layer as the outermost layer. Examples of the basic substrate include a substrate containing a basic organic compound (for example, an amine compound or an ammonium compound) or an inorganic substrate containing a nitrogen atom.
<<壓印用硬化性組成物層形成製程>>
在適用製程中,例如,如圖1的(3)所示,在上述下層膜2的表面適用壓印用硬化性組成物3。
作為壓印用硬化性組成物的適用方法,並無特別限定,能夠參閱日本特開2010-109092號公報(對應US申請的公開號為美國專利申請公開第2011/0183127號說明書)的0102段的記載,該內容併入本說明書。上述壓印用硬化性組成物藉由噴墨法適用於上述下層膜的表面為較佳。又,可以藉由多重塗佈進行壓印用硬化性組成物的塗佈。在藉由噴墨法等在下層膜的表面配置液滴之方法中,液滴的量為1~20pL左右為較佳,液滴隔開間隔配置在下層膜表面為較佳。作為液滴間隔,10~1000μm的間隔為較佳。為噴墨法的情況下,液滴間隔設為噴墨的噴嘴的配置間隔。
進而,下層膜2與適用於下層膜上之膜狀的壓印用硬化性組成物3的體積比為1:1~500為較佳,1:10~300為更佳,1:50~200為進一步較佳。
又,本發明的較佳實施形態之積層體的製造方法為使用本發明的套組製造的方法,該方法包含在由上述壓印用下層膜形成組成物形成之下層膜的表面適用壓印用硬化性組成物之製程。進而,本發明的較佳實施形態之積層體的製造方法包含在基板上將上述壓印用下層膜形成組成物適用為層狀之製程,且包含將適用為上述層狀之壓印用下層膜形成組成物較佳為在100~300℃下,更佳為在130~260℃下,進一步較佳為在150~230℃下,加熱(烘焙)之製程為較佳。加熱時間為30秒鐘~5分鐘為較佳。< Process for forming hardening composition layer for imprinting >>
In the applicable process, for example, as shown in (3) of FIG. 1, the curable composition 3 for imprint is applied to the surface of the lower layer film 2.
The method for applying the curable composition for imprinting is not particularly limited, and reference can be made to paragraph 0102 of Japanese Patent Application Laid-Open No. 2010-109092 (the publication number corresponding to the US application is US Patent Application Publication No. 2011/0183127). This content is incorporated into this specification. The curable composition for imprint is preferably applied to the surface of the underlayer film by an inkjet method. Moreover, the hardening composition for imprints can be applied by multiple application. In the method of arranging droplets on the surface of the lower film by an inkjet method or the like, the amount of the droplets is preferably about 1 to 20 pL, and the droplets are preferably arranged on the surface of the lower film at intervals. The droplet interval is preferably an interval of 10 to 1000 μm. In the case of the inkjet method, the droplet interval is set as the arrangement interval of the nozzles for inkjet.
Further, the volume ratio of the lower layer film 2 to the film-like imprintable curable composition 3 applied to the lower layer film is preferably 1: 1 to 500, more preferably 1:10 to 300, and 1:50 to 200. Is even better.
In addition, a method for manufacturing a laminated body according to a preferred embodiment of the present invention is a method for manufacturing a kit using the present invention. The method includes applying an imprint on a surface of an underlayer film formed from the above-mentioned underlayer film forming composition for imprinting. Process for hardening composition. Furthermore, a method for manufacturing a laminated body according to a preferred embodiment of the present invention includes a process for applying the above-mentioned lower-layer film-forming composition for imprinting to a substrate on a substrate, and further includes applying the lower-layer film for imprinting applicable to the above-mentioned layer. The forming composition is preferably at 100 to 300 ° C, more preferably at 130 to 260 ° C, even more preferably at 150 to 230 ° C, and the process of heating (baking) is more preferred. The heating time is preferably 30 seconds to 5 minutes.
<<鑄模接觸製程>>
例如,如圖1的(4)所示,在鑄模接觸製程中,使上述壓印用硬化性組成物3與具有用於轉印圖案形狀的圖案之鑄模4接觸。藉由經過該種製程,獲得所希望的硬化物圖案(壓印圖案)。
具體而言,為了在膜狀的壓印用硬化性組成物轉印所希望的圖案,在膜狀的壓印用硬化性組成物3的表面覆蓋鑄模4。<〈 Mold contact process 〉>
For example, as shown in (4) of FIG. 1, in the mold contact process, the hardening composition 3 for imprint is brought into contact with a mold 4 having a pattern for transferring a shape of a pattern. Through this process, a desired hardened pattern (embossed pattern) is obtained.
Specifically, in order to transfer a desired pattern to the film-like embossable curable composition, the surface of the film-like embossable curable composition 3 is covered with the mold 4.
鑄模可為光透射性的鑄模,亦可為非光透射性的鑄模。使用光透射性的鑄模時,從鑄模側向壓印用硬化性組成物3照射光為較佳。在本發明中,使用光透射性鑄模,從鑄模側照射光為更佳。
能夠在本發明中使用之鑄模為具有用於轉印之圖案之鑄模。上述鑄模所具有之圖案例如能夠藉由光刻或電子束掃描法等按照所希望之加工精度形成,但在本發明中,鑄模圖案製造方法並無特別限定。又,還能夠將藉由本發明的較佳實施形態之硬化物圖案製造方法形成之圖案用作鑄模。
構成在本發明中使用之光透射性鑄模之材料並無特別限定,例示有玻璃、石英、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯樹脂等光透射性樹脂、透明金屬蒸鍍膜、聚二甲基矽氧烷等柔軟膜、光硬化膜、金屬膜等,石英為較佳。
作為在本發明中使用光透射性基板時使用之非光透射型鑄模材,並無特別限定,只要具有規定強度即可。具體而言,例示有陶瓷材料、蒸鍍膜、磁性膜、反射膜、Ni、Cu、Cr、Fe等金屬基板、SiC、矽、氮化矽、多晶矽、氧化矽、非晶矽等基板等,但並無特別限定。The mold may be a light-transmitting mold or a non-light-transmitting mold. When using a light-transmitting mold, it is preferable to irradiate light to the curable composition 3 for imprint from the mold side. In the present invention, it is more preferable to use a light-transmitting mold and irradiate light from the mold side.
The mold which can be used in the present invention is a mold having a pattern for transfer. The pattern possessed by the mold can be formed, for example, by photolithography, electron beam scanning, or the like with a desired processing accuracy. However, in the present invention, the method for producing a mold pattern is not particularly limited. The pattern formed by the method for manufacturing a cured product pattern according to the preferred embodiment of the present invention can also be used as a mold.
The material constituting the light-transmitting mold used in the present invention is not particularly limited, and examples thereof include light-transmitting resins such as glass, quartz, polymethyl methacrylate (PMMA), polycarbonate resin, transparent metal vapor-deposited films, and polymer materials. For soft films such as dimethylsilane, light-hardened films, metal films, and the like, quartz is preferred.
The non-light-transmitting mold material used when the light-transmitting substrate is used in the present invention is not particularly limited as long as it has a predetermined strength. Specific examples include ceramic materials, vapor-deposited films, magnetic films, reflective films, metal substrates such as Ni, Cu, Cr, and Fe, substrates such as SiC, silicon, silicon nitride, polycrystalline silicon, silicon oxide, and amorphous silicon. It is not particularly limited.
在上述硬化物圖案的製造方法中,使用壓印用硬化性組成物進行壓印微影術時,將鑄模壓力設為10氣壓以下為較佳。藉由將鑄模壓力設為10氣壓以下,存在鑄模或基板不易變形且圖案精度得到提高之傾向。又,從存在由於加壓較低而能夠縮小裝置之傾向之觀點而言亦較佳。鑄模壓力從碰觸鑄模凸部之壓印用硬化性組成物的殘餘膜變少,並且能夠確保鑄模轉印的均勻性之範圍選擇為較佳。
又,在氦氣或凝結性氣體或者包含氦氣和凝結性氣體雙方之氛圍下進行壓印用硬化性組成物與鑄模的接觸亦較佳。In the manufacturing method of the said hardened | cured material pattern, when imprint lithography is performed using the hardenable composition for imprinting, it is preferable to set the mold pressure to 10 atmospheres or less. When the mold pressure is set to 10 atmospheres or less, there is a tendency that the mold or the substrate is not easily deformed and the pattern accuracy is improved. Further, it is also preferable from the viewpoint that the device can be downsized due to low pressure. The mold pressure is reduced from the residual film of the curable composition for imprint which touches the convex part of the mold, and the range capable of ensuring the uniformity of the mold transfer is preferably selected.
It is also preferable to contact the hardening composition for imprint and the mold in an atmosphere containing helium or a condensable gas, or an atmosphere containing both helium and a condensable gas.
<<光照射製程>>
在光照射製程中,向上述壓印用硬化性組成物照射光而形成硬化物。光照射製程中的光照射的照射量只要充分大於硬化所需的最小限的照射量即可。硬化所需的照射量藉由調查壓印用硬化性組成物的不飽和鍵的消耗量等而適當進行確定。
照射之光的種類並無特別限定,例示有紫外光。
又,在適用於本發明之壓印微影術中,光照射時的基板溫度通常設為室溫,但為了提高反應性,亦可加熱的同時進行光照射。作為光照射的準備階段,若設為真空狀態,則在防止混入氣泡、抑制因混入氧而引起之反應性降低、鑄模與壓印用硬化性組成物的密接性提高上有效果,因此可以在真空狀態下進行光照射。又,上述硬化物圖案製造方法中,光照射時的較佳真空度為10-1
Pa至正常壓力的範圍。
進行曝光時,將曝光照度設為1~500mW/cm2
範圍為較佳,設為10~400mW/cm2
範圍為更佳。曝光的時間並無特別限定,0.01~10秒為較佳,0.5~1秒為更佳。曝光量設為5~1000mJ/cm2
範圍為較佳,設為10~500mJ/cm2
範圍為更佳。
在上述硬化物圖案製造方法中,在硬化藉由光照射膜狀的壓印用硬化性組成物(圖案形成層)之後,依據需要,還可包含對硬化之圖案加熱並再進行硬化之製程。作為用於在光照射後加熱硬化壓印用硬化性組成物的溫度,150~280℃為較佳,200~250℃為更佳。又,作為施加熱之時間,5~60分鐘為較佳,15~45分鐘為進一步較佳。<< Light irradiation process >>
In the light irradiation process, the hardening composition for imprint is irradiated with light to form a hardened material. The irradiation amount of light irradiation in the light irradiation process may be sufficiently larger than the minimum irradiation amount required for curing. The amount of irradiation required for curing is appropriately determined by investigating the consumption of unsaturated bonds in the curable composition for imprint and the like.
The type of light to be irradiated is not particularly limited, and ultraviolet light is exemplified.
Moreover, in the imprint lithography applied to the present invention, the substrate temperature during light irradiation is usually set to room temperature, but in order to improve reactivity, light irradiation may be performed while heating. When the vacuum state is used as the preparation stage for light irradiation, it is effective in preventing the inclusion of bubbles, suppressing the decrease in the reactivity caused by the incorporation of oxygen, and improving the adhesion between the mold and the hardening composition for imprinting. Light irradiation was performed in a vacuum state. Moreover, in the said hardened | cured material pattern manufacturing method, the preferable vacuum degree at the time of light irradiation is the range of 10-1 Pa to normal pressure.
When exposed, the exposure illuminance is set to 1 ~ 500mW / cm 2 and is preferred, to 10 ~ 400mW / cm 2 more preferably in the range of. The exposure time is not particularly limited, but is preferably 0.01 to 10 seconds, and more preferably 0.5 to 1 second. The exposure amount is preferably in the range of 5 to 1000 mJ / cm 2 , and more preferably in the range of 10 to 500 mJ / cm 2 .
In the above-mentioned method for manufacturing a cured product pattern, after curing the film-shaped imprintable curable composition (pattern-forming layer) by light, the process may further include a process of heating and curing the cured pattern as necessary. The temperature for heating and hardening the curable composition for imprinting after light irradiation is preferably 150 to 280 ° C, and more preferably 200 to 250 ° C. The time for applying heat is preferably 5 to 60 minutes, and more preferably 15 to 45 minutes.
<<脫模製程>>
在脫模製程中,分離上述硬化物與上述鑄模(圖1的(5))。獲得之硬化物圖案如後述能夠利用於各種用途。
亦即,在本發明中公開有在上述下層膜的表面還具有由壓印用硬化性組成物形成之硬化物圖案之積層體。又,包含在本發明中使用之壓印用硬化性組成物之圖案形成層的膜厚依據使用之用途而不同,但為0.01μm~30μm左右。
另外,如後述,還能夠進行蝕刻等。<< Release Process >>
In the demolding process, the hardened material and the mold are separated ((5) in FIG. 1). The obtained hardened material pattern can be used in various applications as described later.
That is, in the present invention, there is disclosed a laminated body further having a hardened pattern formed of a hardenable composition for imprint on the surface of the underlayer film. Moreover, although the film thickness of the pattern formation layer containing the hardening composition for imprints used by this invention differs depending on the use used, it is about 0.01 micrometer-30 micrometers.
In addition, as described later, etching and the like can be performed.
<硬化物圖案與其適用>
如上所述,藉由上述硬化物圖案的製造方法形成之硬化物圖案能夠用作使用於液晶顯示裝置(LCD)等中之永久膜或半導體元件製造用蝕刻抗蝕劑(微影術用遮罩)。尤其,在本說明書中公開半導體器件(電路基板)的製造方法,該方法包含藉由本發明的較佳實施形態之硬化物圖案的製造方法獲得硬化物圖案之製程。進而,本發明的較佳實施形態之半導體器件的製造方法中,可具有將藉由上述硬化物圖案的製造方法獲得之硬化物圖案作為遮罩在基板上進行蝕刻或離子植入之製程及形成電子構件之製程。上述半導體器件係半導體元件為較佳。亦即,在本說明書中,公開包含上述圖案形成方法之半導體器件的製造方法。進而,在本說明書中公開電子機器的製造方法,該方法具有藉由上述半導體器件的製造方法獲得半導體器件之製程及將上述半導體器件與控制上述半導體器件之控制機構連接之製程。
又,利用藉由上述硬化物圖案製造方法形成之圖案在液晶顯示裝置的玻璃基板形成網格圖案,藉此能夠廉價地製造反射或吸收較少,且大屏幕尺寸(例如55英吋、大於60英吋)的偏光板。例如,能夠製造日本特開2015-132825號公報或國際公開第2011/132649號中記載之偏光板。
如圖1的(6)、圖1的(7)所示,由本發明形成之硬化物圖案作為蝕刻抗蝕劑(微影術用遮罩)亦有用。將硬化物圖案用作蝕刻抗蝕劑時,首先,藉由上述硬化物圖案製造方法在基板上形成例如奈米或微米級微細的硬化物圖案。在本發明中,尤其能夠形成奈米級的微細圖案,進而在還能夠形成尺寸為50nm以下,尤其為30nm以下的圖案之一點上有效。關於由上述硬化物圖案製造方法形成之硬化物圖案的尺寸的下限值並無特別限定,例如,能夠設為1nm以上。
又,在本發明中還公開壓印用鑄模的製造方法,該方法具有藉由本發明的較佳實施形態之硬化物圖案的製造方法在基板上獲得硬化物圖案之製程及使用所獲得之上述硬化物圖案在上述基板進行蝕刻之製程。
濕式蝕刻時使用氟化氫等進行蝕刻,乾式蝕刻時使用CF4
等蝕刻氣體進行蝕刻,藉此能夠在基板上形成所希望的硬化物圖案。硬化物圖案尤其對乾式蝕刻之蝕刻耐性良好。亦即,藉由上述硬化物圖案製造方法形成之圖案較佳地用作微影術用遮罩。< The hardened pattern and its application >
As described above, the hardened pattern formed by the method for manufacturing a hardened pattern can be used as a permanent film used in a liquid crystal display device (LCD), etc., or as an etching resist (mask for lithography) for semiconductor device manufacturing. ). In particular, this specification discloses a method for manufacturing a semiconductor device (circuit board), which method includes a process of obtaining a hardened pattern by a method for manufacturing a hardened pattern according to a preferred embodiment of the present invention. Furthermore, the method for manufacturing a semiconductor device according to a preferred embodiment of the present invention may include a process and formation of etching or ion implantation on a substrate using the hardened pattern obtained by the above-mentioned hardened pattern manufacturing method as a mask. Process of electronic components. The semiconductor device is preferably a semiconductor element. That is, in this specification, a method for manufacturing a semiconductor device including the above-described pattern forming method is disclosed. Furthermore, in this specification, a method for manufacturing an electronic device is disclosed. The method includes a process for obtaining a semiconductor device by the method for manufacturing the semiconductor device and a process for connecting the semiconductor device to a control mechanism that controls the semiconductor device.
In addition, a grid pattern is formed on the glass substrate of the liquid crystal display device by using the pattern formed by the above-mentioned hardened pattern manufacturing method, thereby making it possible to inexpensively manufacture a large screen size (eg, 55 inches, greater than 60 inches with less reflection or absorption). Inch) polarizer. For example, a polarizing plate described in Japanese Patent Application Laid-Open No. 2015-132825 or International Publication No. 2011/132649 can be manufactured.
As shown in FIG. 1 (6) and FIG. 1 (7), the hardened | cured material pattern formed by this invention is also useful as an etching resist (mask for lithography). When a hardened pattern is used as an etching resist, first, a nano or micron-level fine hardened pattern is formed on a substrate by the above-mentioned hardened pattern manufacturing method. In the present invention, it is particularly effective to form a nano-scale fine pattern, and it is also possible to form a pattern having a size of 50 nm or less, especially 30 nm or less. The lower limit value of the size of the hardened | cured material pattern formed by the said hardened | cured material pattern manufacturing method is not specifically limited, For example, it can be 1 nm or more.
In addition, the present invention also discloses a method for manufacturing a mold for imprinting, which method includes a process for obtaining a hardened pattern on a substrate by a method for manufacturing a hardened pattern according to a preferred embodiment of the present invention, and the above-mentioned hardening obtained by using the method. An object pattern is etched on the substrate.
In wet etching, etching is performed using hydrogen fluoride or the like, and in dry etching, etching gas such as CF 4 is used to form a desired hardened pattern on the substrate. The hardened material pattern is particularly excellent in etching resistance against dry etching. That is, the pattern formed by the above-mentioned hardened pattern manufacturing method is preferably used as a mask for lithography.
具體而言,由本發明形成之圖案能夠較佳地使用於導引圖案等的製作,該導引圖案用於使用如下的自己組織化之微細圖案形成(directed self-assembly、DSA(定向自己組裝)),亦即磁盤等的記錄媒體、固體攝像元件等受光元件、LED(light emitting diode(發光二極管))或有機EL(有機電致發光)等發光元件、液晶顯示裝置(LCD)等光器件、衍射光柵、浮雕全息、光波導、濾光器、微透鏡陣列等光學組件、薄膜晶體管、有機晶體管、濾色器、防反射膜、偏光板、偏光元件、光學膜、柱材等平板顯示器用構件、奈米生物器件、免疫分析晶片、脫氧核糖核酸(DNA)分離晶片、微反應器、光子液晶、嵌段共聚物。
[實施例]Specifically, the pattern formed by the present invention can be preferably used for the production of a guide pattern or the like, which is used to form a self-organized fine pattern (directed self-assembly, DSA (directed self-assembly)) ), That is, recording media such as magnetic disks, light-receiving elements such as solid-state imaging elements, light-emitting elements such as LED (light emitting diode) or organic EL (organic electroluminescence), optical devices such as liquid crystal display devices (LCD), Optical components such as diffraction gratings, relief holograms, optical waveguides, filters, microlens arrays, thin film transistors, organic transistors, color filters, anti-reflection films, polarizers, polarizers, optical films, pillars, and other flat panel display components Nano-devices, immunoassay wafers, DNA separation wafers, microreactors, photonic liquid crystals, block copolymers.
[Example]
以下舉出實施例進一步對本發明進行具體說明。以下實施例中所示出之材料、使用量、比例、處理內容、處理順序等只要不脫離本發明的主旨,能夠適當進行變更。因此,本發明的範圍並不限定於以下所示出之具體例。The following examples further illustrate the present invention. The materials, usage amounts, proportions, processing contents, processing sequence, and the like shown in the following examples can be appropriately changed as long as they do not depart from the gist of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below.
<A-1/B-1(90/10)共聚物的合成>
向燒瓶中,作為溶劑加入水100g,且在氮氛圍下升溫到90℃。向該水中,將甲基丙烯酸環氧丙基;16.0g(0.16莫耳)(FUJIFILM Wako Pure Chemical Corporation)、下述磷酸二鈉2-丙烯醯氧乙基;1.8g(7毫莫耳)(FUJIFILM Wako Pure Chemical Corporation)、2,2’-偶氮二(2-(2-咪唑啉-2-基)丙烷二鹽酸鹽)(VA-044);1.0g(3毫莫耳)(FUJIFILM Wako Pure Chemical Corporation)、水;50g的混合液滴加2小時。滴加結束之後,進一步藉由在90℃下攪拌4小時而獲得共聚物。
向上述共聚物的溶液加入丙烯酸;11.6g(0.16莫耳)(FUJIFILM Wako Pure Chemical Corporation)、溴化四乙銨(TEAB);2.1g(FUJIFILM Wako Pure Chemical Corporation)、4-羥基-四甲基哌啶-1-氧基(4-HO-TEMPO);50mg(FUJIFILM Wako Pure Chemical Corporation),在90℃下反應8小時,並確認到丙烯酸藉由反應從H-NMR消失,從而獲得樹脂的水溶液。下述中示出反應方案。
向上述水溶液加入1N的鹽酸,利用水洗純化被沉澱著而獲得樹脂A-1/B-1的粉末。
關於其他共聚物亦同樣地合成。<Synthesis of A-1 / B-1 (90/10) copolymer>
100 g of water was added to the flask as a solvent, and the temperature was raised to 90 ° C. under a nitrogen atmosphere. To this water, 16.0 g (0.16 mol) of epoxy methacrylate (FUJIFILM Wako Pure Chemical Corporation), the following disodium phosphate 2-propenyloxyethyl; 1.8 g (7 mmol) FUJIFILM Wako Pure Chemical Corporation), 2,2'-azobis (2- (2-imidazolin-2-yl) propane dihydrochloride) (VA-044); 1.0 g (3 mmol) (FUJIFILM Wako Pure Chemical Corporation), water; 50 g of the mixed liquid was added dropwise for 2 hours. After completion of the dropwise addition, a copolymer was obtained by further stirring at 90 ° C for 4 hours.
To the solution of the above copolymer was added acrylic acid; 11.6 g (0.16 mol) (FUJIFILM Wako Pure Chemical Corporation), tetraethylammonium bromide (TEAB); 2.1 g (FUJIFILM Wako Pure Chemical Corporation), 4-hydroxy-tetramethyl Piperidin-1-oxy (4-HO-TEMPO); 50 mg (FUJIFILM Wako Pure Chemical Corporation), reacted at 90 ° C for 8 hours, and it was confirmed that acrylic acid disappeared from H-NMR by the reaction, thereby obtaining an aqueous resin solution . The reaction scheme is shown below.
1N hydrochloric acid was added to the aqueous solution, and the precipitate was purified by washing with water to obtain a resin A-1 / B-1 powder.
The other copolymers were similarly synthesized.
[化學式4]
磷酸二鈉2-丙烯醯氧乙基(分子量254.2)[Chemical Formula 4]
Disodium phosphate 2-propenyloxyethyl (molecular weight 254.2)
[化學式5]
[Chemical Formula 5]
將上述樹脂溶解於PGMEA而獲得PGMEA溶液。
由所獲得之樹脂的凝膠滲透層析術(GPC)求出之重量平均分子量(Mw、聚苯乙烯換算)為20,000,分散度(Mw/Mn)=2.2。
<分子量的測量方法>
樹脂的重量平均分子量(Mw)根據凝膠滲透色譜法(GPC測量)定義為聚苯乙烯換算值。裝置使用HLC-8220(TOSOH CORPORATION製),作為管柱使用了保護管柱HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000及TSKgel Super HZ2000(TOSOH CORPORATION製)。溶析液使用了THF(四氫呋喃)。檢測使用RI檢測器來進行。The resin was dissolved in PGMEA to obtain a PGMEA solution.
The weight-average molecular weight (Mw, polystyrene equivalent) determined by gel permeation chromatography (GPC) of the obtained resin was 20,000, and the degree of dispersion (Mw / Mn) = 2.2.
< Method of measuring molecular weight >
The weight average molecular weight (Mw) of the resin is defined as a polystyrene conversion value by gel permeation chromatography (GPC measurement). HLC-8220 (manufactured by TOSOH CORPORATION) was used for the apparatus, and protective column HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (manufactured by TOSOH CORPORATION) were used as the column. As the eluent, THF (tetrahydrofuran) was used. Detection was performed using an RI detector.
<下層膜形成組成物的製備>
製備含有下述表中顯示之成分之溶液。對其利用0.02μm尼龍過濾器及0.010μmPTFE(聚四氟乙烯)過濾器進行過濾,來製備實施例及比較例中顯示之下層膜形成組成物的製備。<Preparation of the Underlayer Film-forming Composition>
A solution containing the ingredients shown in the following table was prepared. This was filtered using a 0.02 μm nylon filter and a 0.010 μm PTFE (polytetrafluoroethylene) filter to prepare the preparation of the underlying film-forming composition shown in the examples and comparative examples.
<壓印用硬化性組成物的製備>
混合在下表中記載的各種化合物,以相對於聚合性化合物的總計量成為200質量ppm(0.02質量%)的方式進一步加入作為聚合抑制劑的4-羥基-2,2,6,6-四甲基哌啶-1-氧基自由基(Tokyo Chemical Industry Co.,Ltd.製)而製備。對其利用0.02μm尼龍過濾器及0.001μmPTFE過濾器進行過濾來製備壓印用硬化性組成物。<Preparation of hardening composition for imprinting>
The various compounds described in the following table were mixed, and 4-hydroxy-2,2,6,6-tetramethyl was further added as a polymerization inhibitor so that the total amount of the polymerizable compound was 200 mass ppm (0.02 mass%). Prepared from piperidine-1-oxy radical (manufactured by Tokyo Chemical Industry Co., Ltd.). This was filtered through a 0.02 μm nylon filter and a 0.001 μm PTFE filter to prepare a curable composition for imprint.
<pKa的計算>
使用下述套裝軟體並藉由計算而求出。
套裝軟體:Advanced Chemistry Development (ACD/Labs) Software V8.14 for Solaris (1994-2007 ACD/Labs)< Calculation of pKa >
Use the following software package and calculate it.
Package software: Advanced Chemistry Development (ACD / Labs) Software V8.14 for Solaris (1994-2007 ACD / Labs)
<下層膜的形成/膜厚評價>
在示於下表之基板上,旋轉塗佈表中記載之壓印用下層膜形成組成物,且在表中記載之烘焙條件下利用加熱板加熱而形成下層膜。下層膜的膜厚藉由橢圓偏振儀進行了測量。<Formation of Underlayer Film / Evaluation of Film Thickness>
On the substrates shown in the following table, an underlayer film-forming composition for imprinting described in the table was spin-coated, and an underlayer film was formed by heating with a hot plate under the baking conditions described in the table. The film thickness of the lower film was measured by an ellipsometer.
<密接力的評價>
在由上述獲得之下層膜的表面上,利用FUJIFILM Dimatix公司製噴墨打印機DMP-2831,按每個噴嘴6pL的液滴量噴出溫度調整為23℃之壓印用硬化性組成物,以液滴在下層膜上成為約100μm間隔的方形陣列的方式進行了塗佈,而設為圖案形成層。接著,在He環境(取代率90%以上)下,在圖案形成層上覆蓋旋轉塗佈有示於日本特開2014-024322號公報的實施例6之密接層形成用組成物之石英晶圓,而封印了壓印用硬化性組成物。在封印後經過10秒鐘的時刻,從鑄模側使用高壓汞燈並在150mJ/cm2
的條件下進行了曝光。測量剝離曝光後的樣板時所需的力,將下層膜的密接力設為F。
A:F≥30N
B:25N≤F<30N
C:20N≤F<25N
D:F<20N< Evaluation of close contact force >
On the surface of the underlayer film obtained as described above, an inkjet printer DMP-2831 manufactured by FUJIFILM Dimatix was used to print a hardening composition for imprint with a droplet discharge temperature of 23 pC per nozzle and a temperature of 23 ° C. The lower layer film was coated so as to have a square array with a spacing of about 100 μm, and was used as a pattern forming layer. Next, in a He environment (replacement rate of 90% or more), the pattern forming layer is covered with a quartz wafer spin-coated with the composition for forming an adhesive layer shown in Example 6 of Japanese Patent Application Laid-Open No. 2014-024322. In addition, a curable composition for imprinting is sealed. At a time of 10 seconds after the sealing, exposure was performed under the condition of 150 mJ / cm 2 using a high-pressure mercury lamp from the mold side. The force required to peel the exposed sample was measured, and the adhesion force of the lower layer film was set to F.
A: F≥30N
B: 25N≤F < 30N
C: 20N≤F < 25N
D: F <20N
<面狀(剝離缺陷的評價)>
在由上述獲得之下層膜的表面上,利用FUJIFILM Dimatix公司製噴墨打印機DMP-2831,按每個噴嘴6pL的液滴量噴出溫度調整為25℃之壓印用硬化性組成物,以液滴在下層膜上成為約100μm間隔的方形陣列的方式進行了塗佈,而設為圖案形成層。接著,在He環境下(取代率90%以上),在圖案形成層上覆蓋石英鑄模(線寬28nm、深度60nm的線圖案),並將壓印用硬化性組成物填充於鑄模。在封印後經過10秒鐘的時刻,從鑄模側使用高壓汞燈並在150mJ/cm2
的條件下進行了曝光之後,藉由剝離鑄模,在圖案形成層轉印了圖案。利用光學顯微鏡觀察(宏觀觀察)及SEM觀察(微觀察)確認了有無轉印之圖案的剝離。
A:沒有確認到圖案剝離
B:宏觀觀察下沒有確認到剝離,但微觀察下確認到圖案的剝離
C:在宏觀觀察下確認到在局部區域(脫模末端部)存在剝離
D:在宏觀觀察下遍及轉印區前表面確認到剝離<Flat shape (evaluation of peeling defects)>
On the surface of the underlayer film obtained as described above, an inkjet printer DMP-2831 manufactured by FUJIFILM Dimatix was used to print a hardenable composition for imprint with a droplet discharge temperature of 6 pL per nozzle at 25 ° C. The lower layer film was coated so as to have a square array with a spacing of about 100 μm, and was used as a pattern forming layer. Next, a quartz mold (a line pattern with a line width of 28 nm and a depth of 60 nm) was covered on the pattern forming layer under a He environment (a substitution rate of 90% or more), and the mold was filled with a hardening composition for imprinting. Ten seconds after the seal was passed, a high-pressure mercury lamp was used from the mold side and exposure was performed under the conditions of 150 mJ / cm 2 , and then the pattern was transferred on the pattern forming layer by peeling the mold. The presence or absence of peeling of the transferred pattern was confirmed with an optical microscope observation (macro observation) and an SEM observation (micro observation).
A: No pattern peeling was observed
B: No peeling was observed under macro observation, but pattern peeling was confirmed under micro observation
C: Macroscopic observation confirmed the presence of peeling in a localized area (the end of the mold release)
D: Peeling was confirmed across the front surface of the transfer area under macro observation
在下述表5及表6中,聚合物的A-1/B-1係指具有A-1的構成單元和B-1的構成單元之共聚物。90/10表示共聚合比(莫耳比),分別係指左方的構成單元和右方的構成單元的比率。單體的pKa採用構成聚合物之單體中pKa4.0以下單體的pKa的值。表中的縮寫的意義如下述。
PGMEA:丙二醇單甲醚乙酸酯
PGME:丙二醇單甲醚
γBL:γ-丁內酯
Mw:重量平均分子量
[表5]
[表6]
[表7]
摻和量的單位為質量份
沸點的單位為℃(1013.25hPa)
[表8]
[表9]
In Tables 5 and 6 below, A-1 / B-1 of the polymer means a copolymer having a constitutional unit of A-1 and a constitutional unit of B-1. 90/10 represents a copolymerization ratio (molar ratio), and refers to the ratio of the left constituent unit and the right constituent unit, respectively. The pKa of the monomer is a value of pKa of a monomer having a pKa of 4.0 or less among the monomers constituting the polymer. The meanings of the abbreviations in the table are as follows.
PGMEA: propylene glycol monomethyl ether acetate
PGME: propylene glycol monomethyl ether γBL: γ-butyrolactone
Mw: weight average molecular weight
[table 5]
[TABLE 6]
[TABLE 7]
The unit of the blending amount is the mass part. The unit of the boiling point is ℃ (1013.25hPa).
[TABLE 8]
[TABLE 9]
<基板>
基板Si:直徑8英吋(1英吋為2.54釐米)的矽晶圓
基板1:在直徑8英吋的矽晶圓上利用旋轉塗佈來塗佈旋轉塗佈式碳膜ODL-102(Shin-Etsu Chemical Co.,Ltd.),且在240℃下烘焙60秒鐘,形成膜厚200nm的SOC(Spin on Carbon旋塗碳)膜之基板。
基板2:在直徑8英吋的氮化矽晶圓上利用旋轉塗佈來塗佈旋轉塗佈式碳膜ODL-50(Shin-Etsu Chemical Co.,Ltd.),且在240℃下烘焙60秒鐘,形成膜厚200nm的SOC(Spin on Carbon)膜之基板。
基板3:在直徑8英吋的矽晶圓上利用旋轉塗佈來塗佈SOC NCA9053EH(Nissan Chemical Industries,Ltd.),且在240℃下烘焙60秒鐘,形成膜厚200nm的SOC(Spin on Carbon)膜之基板。
基板SOG:在直徑8英吋的矽晶圓上利用旋轉塗佈來塗佈OCD T-12(Tokyo Ohka Kogyo Co.,Ltd.),且進行120秒鐘UV臭氧處理,形成膜厚200nm的SOG膜之基板。<Substrate>
Substrate Si: Silicon wafer with a diameter of 8 inches (1 inch is 2.54 cm). Substrate 1: Spin-coated carbon film ODL-102 (Shin) coated on a silicon wafer with a diameter of 8 inches by spin coating. -Etsu Chemical Co., Ltd.) and baked at 240 ° C for 60 seconds to form a substrate with a SOC (Spin on Carbon) film with a thickness of 200 nm.
Substrate 2: Spin-coated carbon film ODL-50 (Shin-Etsu Chemical Co., Ltd.) was coated on a silicon nitride wafer with a diameter of 8 inches by spin coating, and baked at 240 ° C for 60 minutes. In seconds, a substrate with a SOC (Spin on Carbon) film having a thickness of 200 nm is formed.
Substrate 3: SOC NCA9053EH (Nissan Chemical Industries, Ltd.) was applied on a 8-inch diameter silicon wafer by spin coating, and baked at 240 ° C for 60 seconds to form a 200 nm SOC (Spin on Carbon) film substrate.
Substrate SOG: OCD T-12 (Tokyo Ohka Kogyo Co., Ltd.) was coated on a silicon wafer with a diameter of 8 inches by spin coating, and UV ozone treatment was performed for 120 seconds to form a SOG with a thickness of 200 nm. Film substrate.
從上述結果明確可知,若使用pKa4.0以下的源自單體的構成單元和聚合性基團之聚合物在壓印用下層膜形成組成物形成下層膜,則能夠實現壓印用硬化性組成物優異之密接性(實施例1~15)。尤其,可知該些壓印用下層膜形成組成物為在碳含量不同的基板或SOG基板等各種基板中均實現了良好的密接性,通用性高的材料。又,在任何實施例的試料中,形成在下層膜的表面之壓印層均具有良好的面狀。
另一方面,不使用上述特定聚合物之情況(比較例1)下,成為密接性差之結果。From the above results, it is clear that if an underlayer film is formed by using an underlayer film forming composition for imprinting using a polymer derived from monomer-derived constituent units and polymerizable groups of pKa 4.0 or less, a hardening composition for imprinting can be achieved Excellent adhesion (Examples 1 to 15). In particular, it can be seen that these underlayer film-forming compositions for imprinting are materials that achieve good adhesion to various substrates such as substrates having different carbon contents or SOG substrates and are highly versatile. In any of the samples of the examples, the imprint layer formed on the surface of the lower layer film had a good surface shape.
On the other hand, when the specific polymer is not used (Comparative Example 1), the result is poor adhesion.
1‧‧‧基板1‧‧‧ substrate
2‧‧‧下層膜 2‧‧‧ lower film
3‧‧‧壓印用硬化性組成物 3‧‧‧curable composition for imprinting
4‧‧‧鑄模 4‧‧‧ mold
圖1的(1)~(7)係表示硬化物圖案的形成及將所獲得之硬化物圖案用於基於蝕刻之基板的加工時的製造步驟的一例之製程說明圖。(1)-(7) of FIG. 1 are process explanatory drawings which show an example of the formation of a hardened | cured material pattern, and an example of the manufacturing process at the time of using the obtained hardened | cured material pattern for the process by a substrate by etching.
Claims (22)
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| JP2018060918 | 2018-03-27 | ||
| JP2018-060918 | 2018-03-27 |
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| TWI771575B TWI771575B (en) | 2022-07-21 |
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| CN112871553B (en) * | 2021-01-11 | 2021-12-17 | 温州医科大学附属第二医院(温州医科大学附属育英儿童医院) | A multi-port automatic in and out layer-by-layer assembly machine |
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| US8808808B2 (en) * | 2005-07-22 | 2014-08-19 | Molecular Imprints, Inc. | Method for imprint lithography utilizing an adhesion primer layer |
| US20120128891A1 (en) * | 2009-07-29 | 2012-05-24 | Nissan Chemical Industries, Ltd. | Composition for forming resist underlayer film for nanoimprint |
| JP2014093385A (en) * | 2012-11-02 | 2014-05-19 | Fujifilm Corp | Method of manufacturing adhesion film for imprint and method of forming pattern |
| JP6029506B2 (en) * | 2013-03-26 | 2016-11-24 | 富士フイルム株式会社 | Composition for forming underlayer film for imprint and pattern forming method |
| TWI656162B (en) * | 2014-06-20 | 2019-04-11 | 日商富士軟片股份有限公司 | Resin composition for forming an underlayer film, laminated body, pattern forming method, and manufacturing method of element |
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